TWI494560B - Grain selection method and bad crystal map generation method - Google Patents
Grain selection method and bad crystal map generation method Download PDFInfo
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Description
本發明是有關於一種晶粒選擇方法,且特別是有關於一種發光二極體(Light Emitting Diode,簡稱LED)晶粒的晶粒選擇方法及壞晶地圖產生方法。The present invention relates to a method for selecting a crystal grain, and more particularly to a method for crystal grain selection of a light emitting diode (LED) die and a method for generating a bad crystal map.
目前常見應用於LED晶粒的製程包括下列步驟:點測(probing)、自動化光學檢測(Automated Optical Inspection,簡稱AOI)、分選(sorting)、人工目檢及壞晶挑除。The current common processes for LED dies include the following steps: probing, automated optical inspection (AOI), sorting, manual visual inspection, and bad crystal removal.
點測是指對LED晶粒的光電特性進行測試。自動化光學檢測是藉由自動化光學檢測機來觀測晶粒的外觀是否有損傷。分選是依照點測及自動化光學檢測所獲得的結果將好的晶粒(即外觀損傷程度較低的晶粒)依照光學特性轉移到分選載體(sort page),其例如是具有黏性的藍膜。人工目檢則是藉由人工及顯微鏡來逐一地觀測在分選載體上的所有晶粒的外觀是否有損傷。壞晶挑除則是依照人工目檢的人為判斷來人工挑除有損傷的晶粒。Spot measurement refers to testing the photoelectric characteristics of LED dies. Automated optical inspection is the use of automated optical inspection machines to observe the appearance of the grain is damaged. Sorting is based on the results obtained by spot testing and automated optical inspection to transfer good grains (ie, grains with a lower degree of appearance damage) to a sorting page according to optical properties, which is, for example, viscous. Blue film. The manual visual inspection is to observe by hand and microscope one by one whether the appearance of all the crystal grains on the sorting carrier is damaged. Bad crystal picking is to manually pick out damaged grains according to the human judgment of manual visual inspection.
值得注意的是,在人工目檢以前的任何過程中,晶粒的外觀都可能受到程度不一的損傷。因此,在人工目檢的步驟中,依照人為判斷來判定此晶粒是有損傷的。然而,當晶粒是否有損傷完全依賴人為判斷時,晶粒損傷與否很難有統一標準。也因此,人工目檢嚴重地影響到晶粒選擇的均一性。It is worth noting that the appearance of the grains may be subject to varying degrees of damage during any process prior to manual visual inspection. Therefore, in the step of manual visual inspection, it is judged that the crystal grain is damaged according to human judgment. However, when the grain damage is completely dependent on human judgment, it is difficult to have a uniform standard for grain damage. Therefore, manual visual inspection seriously affects the uniformity of grain selection.
本發明提供一種晶粒選擇方法,以消除人為判斷對於晶粒外觀損傷程度判定的不確定性。The present invention provides a grain selection method to eliminate the uncertainty of the determination of the degree of damage to the appearance of crystal grains by human judgment.
本發明提供一種壞晶地圖產生方法,以作為挑除壞晶(即有損傷的晶粒)的參考。The present invention provides a method of generating a bad crystal map as a reference for picking out bad crystals (i.e., damaged grains).
本發明的晶粒選擇方法包括下列步驟。點測多個晶粒,以測量這些晶粒的光電特性。將具有相近光電特性的這些晶粒轉移至一分選載體。藉由一自動化光學檢測設備來觀測在分選載體上的這些晶粒,以產生一觀測結果,其中觀測結果包括這些晶粒在分選載體上的位置及這些晶粒是否有損傷。依照觀測結果描繪一壞晶地圖,其中壞晶地圖具有至少一壞晶標記,以標示出這些晶粒中有損傷者的位置。依照壞晶地圖的壞晶標記來挑除這些晶粒中有損傷者。The die selection method of the present invention includes the following steps. Multiple grains were spotted to measure the photoelectric properties of these grains. These grains having similar photoelectric properties are transferred to a sorting carrier. These grains on the sorting carrier are observed by an automated optical inspection device to produce an observation, wherein the observations include the location of the grains on the sorting carrier and whether the grains are damaged. A bad crystal map is depicted in accordance with the observations, wherein the bad crystal map has at least one bad crystal mark to indicate the location of the damaged person in the grains. According to the bad crystal mark of the bad crystal map, those who have damaged in the crystal grains are picked up.
本發明的壞晶地圖產生方法包括下列步驟。藉由一自動化光學檢測設備來觀測在一分選載體上的多個晶粒,以產生一觀測結果,其中觀測結果包括這些晶粒的位置及這些晶粒是否損 傷。依照觀測結果描繪一壞晶地圖,其中壞晶地圖具有至少一壞晶標記,以標示出這些晶粒中有損傷者的位置。The bad crystal map generating method of the present invention includes the following steps. Observing a plurality of grains on a sorting carrier by an automated optical inspection device to produce an observation, wherein the observations include the positions of the grains and whether the grains are damaged hurt. A bad crystal map is depicted in accordance with the observations, wherein the bad crystal map has at least one bad crystal mark to indicate the location of the damaged person in the grains.
基於上述,在本發明中,將機器觀測的步驟移至分選的步驟之後,以取代習知的人工目檢步驟,故可消除人為判斷對於晶粒損傷判定的不確定性,因而提高晶粒損傷判定的一致性,同時省去人工目檢的時間成本。此外,在本發明中,增加了描繪壞晶地圖的步驟,而壞晶地圖則應用作為挑除壞晶(有損傷晶粒)時的參考。Based on the above, in the present invention, the step of machine observation is moved to the step of sorting to replace the conventional manual visual inspection step, so that the uncertainty of the determination of the grain damage by human judgment can be eliminated, thereby increasing the grain size. Consistency of damage determination, while eliminating the time cost of manual visual inspection. Further, in the present invention, the step of depicting a bad crystal map is added, and the bad crystal map is applied as a reference when picking up bad crystals (damaged crystal grains).
為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。The above described features and advantages of the invention will be apparent from the following description.
100‧‧‧分選載體100‧‧‧ sorting carrier
100a‧‧‧框體100a‧‧‧ frame
100b‧‧‧藍膜100b‧‧‧Blue film
102‧‧‧晶粒102‧‧‧ grain
102a‧‧‧首顆晶粒102a‧‧‧First grain
108‧‧‧載體定位標記108‧‧‧Carrier locating markers
200‧‧‧壞晶地圖200‧‧‧bad crystal map
201‧‧‧首晶標記201‧‧‧First Crystal Mark
202‧‧‧壞晶標記202‧‧‧bad crystal mark
204‧‧‧方向標記204‧‧‧ Direction Mark
206‧‧‧條碼標記206‧‧‧ barcode marking
208‧‧‧地圖定位標記208‧‧‧Map location marker
S110~S150‧‧‧步驟S110~S150‧‧‧Steps
圖1是本發明的一實施例的一種晶粒選擇方法的流程圖。1 is a flow chart of a die selection method in accordance with an embodiment of the present invention.
圖2繪示圖1的晶粒選擇方法所使用的分選載體及其上的晶粒。2 illustrates a sorting carrier used in the die selection method of FIG. 1 and crystal grains thereon.
圖3繪示圖1的晶粒選擇方法所使用的壞晶地圖。3 is a diagram showing a bad crystal map used in the die selection method of FIG. 1.
圖4繪示圖2及圖3的分選載體及其上的晶粒與壞晶地圖相互重疊。4 illustrates the sorting carrier of FIGS. 2 and 3 and the grain and the bad crystal map thereon overlap each other.
圖5繪示圖1的晶粒選擇方法所使用的另一種分選載體及其上的晶粒。FIG. 5 illustrates another sorting carrier used in the grain selection method of FIG. 1 and crystal grains thereon.
圖6繪示圖1的晶粒選擇方法所使用的另一種壞晶地圖。FIG. 6 illustrates another bad crystal map used in the die selection method of FIG. 1.
圖7繪示圖5及圖6的分選載體及其上的晶粒與壞晶地圖相互重疊。FIG. 7 illustrates the sorting carrier of FIGS. 5 and 6 and the crystal grains and the bad crystal map thereon overlap each other.
本實施例的晶粒選擇方法包括下列步驟:點測、分選、機器觀測、壞晶地圖(bad die map)描繪及壞晶挑除。值得注意的是,在本實施例中,將機器觀測的步驟移至分選的步驟之後,以取代習知的人工目檢步驟,故可消除人為判斷對於晶粒損傷判定的不確定性。此外,增加了描繪壞晶地圖的步驟,而壞晶地圖則應用作為挑除壞晶(有損傷晶粒)時的參考。The grain selection method of this embodiment includes the following steps: spotting, sorting, machine observation, bad die map depiction, and bad crystal picking. It should be noted that in the present embodiment, the step of machine observation is moved to the step of sorting to replace the conventional manual visual inspection step, so that the uncertainty of the determination of the grain damage by human judgment can be eliminated. In addition, the steps of depicting bad crystal maps have been added, while the bad crystal maps have been used as a reference for picking out bad crystals (damaged grains).
具體而言,請參考圖1,在本實施例的晶粒選擇方法中,首先,如步驟S110所示,點測多個晶粒(例如LED晶粒),以測量這些晶粒的光電特性。接著,如步驟S120所示,將具有相近光電特性的這些晶粒轉移至一分選載體。在本實施例中,如圖2所示,分選載體100例如是具有黏性的藍膜,而這些晶粒102則黏附至分選載體100。Specifically, referring to FIG. 1, in the die selection method of the present embodiment, first, as shown in step S110, a plurality of crystal grains (for example, LED dies) are spot-measured to measure photoelectric characteristics of the crystal grains. Next, as shown in step S120, the crystal grains having similar photoelectric characteristics are transferred to a sorting carrier. In the present embodiment, as shown in FIG. 2, the sorting carrier 100 is, for example, a viscous blue film, and these crystal grains 102 are adhered to the sorting carrier 100.
如步驟S130所示,藉由一自動化光學檢測(AOI)設備來觀測在分選載體100上的這些晶粒102,以產生一觀測結果。觀測結果包括這些晶粒102在分選載體100上的位置及這些晶粒102是否有損傷。之後,如步驟S140所示,依照觀測結果描繪一壞晶地圖。如圖3所示,壞晶地圖200具有多個壞晶標記202,以標示出這些晶粒102中有損傷者的位置。在本實施例中,壞晶地圖200 可藉由同一自動化光學檢測設備的內建模組或其他的電子裝置依照觀測結果來加以描繪。As shown in step S130, the grains 102 on the sorting carrier 100 are observed by an automated optical inspection (AOI) apparatus to produce an observation. The results of the observations include the location of the grains 102 on the sorting carrier 100 and whether the grains 102 are damaged. Thereafter, as shown in step S140, a bad crystal map is drawn in accordance with the observation result. As shown in FIG. 3, the bad crystal map 200 has a plurality of bad crystal indicia 202 to indicate the locations of the damaged ones of the crystal grains 102. In this embodiment, the bad crystal map 200 It can be depicted in accordance with the observations by an internal modeling group of the same automated optical inspection device or other electronic device.
如步驟S150所示,依照壞晶地圖200的壞晶標記202來挑除這些晶粒102中有損傷者。挑除晶粒102的方式可採用人工挑除或機器挑除。在本實施例中,如圖4所示,可重疊壞晶地圖200與分選載體100,以將壞晶標記202對準至其所對應有損傷的晶粒102。在對準的過程中,可將分選載體100上最左上角的首顆晶粒102a重疊於壞晶地圖200的最左上角的首晶標記201,以達成正確定位。接著,將壞晶標記202所對準的晶粒102移除。值得注意的是,當首顆晶粒102a亦被歸類為壞晶(有損傷晶粒)時,首晶標記201的性質(例如圖案或顏色)可與壞晶標記202者相同或相似,以利在後續步驟中移除。As shown in step S150, the damaged ones of the crystal grains 102 are picked up according to the bad crystal mark 202 of the bad crystal map 200. The method of picking up the die 102 can be either manual picking or machine picking. In the present embodiment, as shown in FIG. 4, the bad crystal map 200 and the sorting carrier 100 may be overlapped to align the bad crystal markings 202 to the damaged crystal grains 102. During the alignment process, the first crystal grain 102a of the uppermost left corner of the sorting carrier 100 may be overlapped with the first crystal mark 201 of the uppermost left corner of the bad crystal map 200 to achieve correct positioning. Next, the die 102 aligned with the bad crystal mark 202 is removed. It should be noted that when the first die 102a is also classified as a bad crystal (damaged grain), the properties (eg, pattern or color) of the first crystal mark 201 may be the same as or similar to those of the bad crystal mark 202. Lee removed in the next steps.
請參考圖4,為了重疊壞晶地圖200與分選載體100,可藉由一顯示裝置(例如平面顯示器、觸控平面顯示器或投影機)以影像形式將壞晶地圖200投射在分選載體100上。因此,當以人工挑除壞晶時,人眼可透過半透明的分選載體100看見投影其上的壞晶地圖200。當選用觸控平面顯示器來投射壞晶地圖200時,可利用人工直接觸控來更換下一張對應另一分選載體100的壞晶地圖200,以增加壞晶的挑除速度。Referring to FIG. 4, in order to overlap the bad crystal map 200 and the sorting carrier 100, the bad crystal map 200 may be projected on the sorting carrier 100 by image display by a display device such as a flat panel display, a touch panel display or a projector. on. Therefore, when the bad crystal is manually removed, the human eye can see the bad crystal map 200 projected thereon through the translucent sorting carrier 100. When the touch flat panel display is selected to project the bad crystal map 200, the manual direct touch can be used to replace the next bad crystal map 200 corresponding to the other sorting carrier 100 to increase the picking speed of the bad crystal.
請參考圖4,為了重疊壞晶地圖200與分選載體100,亦可藉由一列印裝置以紙本輸出壞晶地圖200,並接著重疊壞晶地圖200與分選載體100,以將壞晶標記202對準至其所對應有損傷的 晶粒102。當以人工挑除壞晶時,人眼可透過半透明的分選載體100看見與其重疊的壞晶地圖200。因此,當以人工挑除壞晶時,可透過半透明的分選載體100看見其下方的壞晶地圖200。Referring to FIG. 4, in order to overlap the bad crystal map 200 and the sorting carrier 100, the bad crystal map 200 may be outputted on a paper by a printing device, and then the bad crystal map 200 and the sorting carrier 100 are overlapped to remove the bad crystal. Marker 202 is aligned to its corresponding damage Die 102. When the bad crystal is manually picked, the human eye can see the bad crystal map 200 overlapping with it through the translucent sorting carrier 100. Therefore, when the bad crystal is manually removed, the bad crystal map 200 below it can be seen through the translucent sorting carrier 100.
請再參考圖2及圖3,為了確保方向上的正確對準,除了將首顆晶粒102a重疊於首晶標記201以外,壞晶地圖200還可具有一方向標記204,其可對應在分選載體100上的晶粒102的方向。舉例而言,如圖2的放大部位,晶粒102的電極102a的形狀具有方向性,故可設定壞晶地圖200的方向標記204平行於晶粒102的電極102a的方向。Referring to FIG. 2 and FIG. 3 again, in order to ensure correct alignment in the direction, in addition to superimposing the first die 102a on the first crystal mark 201, the bad crystal map 200 may further have a direction mark 204, which may correspond to The orientation of the die 102 on the carrier 100 is selected. For example, as shown in the enlarged portion of FIG. 2, the shape of the electrode 102a of the die 102 is directional, so that the direction mark 204 of the bad crystal map 200 can be set parallel to the direction of the electrode 102a of the die 102.
請參考圖3,為了確保觀測結果對應到正確的分選載體100及其上的晶粒102,壞晶地圖200還可具有一條碼標記206,以對應在分選載體100上的這些晶粒102的編號。Referring to FIG. 3, in order to ensure that the observation corresponds to the correct sorting carrier 100 and the die 102 thereon, the bad crystal map 200 may further have a code mark 206 to correspond to the crystal grains 102 on the sorting carrier 100. The number.
請參考圖5及圖6,在另一實施例中,分選載體100可具有多個載體定位標記108,壞晶地圖200具有多個地圖定位標記208,而這些地圖定位標記208對應於這些載體定位標記108。這些載體定位標記108可配置於分選載體100的對角線上,而這些地圖定位標記208可配置於壞晶地圖200的對角線上。因此,如圖7所示,當壞晶地圖200重疊於分選載體100時,藉由將這些地圖定位標記208分別對準這些載體定位標記108,這可使壞晶標記202對準至其所對應有損傷的晶粒102。在本實施例中,這些載體定位標記108可在經過自動化光學檢測(AOI)以後,利用增設在AOI設備內的噴印模組以噴印方式預先形成在分選載體100 上,但本發明不限於此。Referring to FIG. 5 and FIG. 6, in another embodiment, the sorting carrier 100 may have a plurality of carrier positioning marks 108, and the bad crystal map 200 has a plurality of map positioning marks 208, and the map positioning marks 208 correspond to the vectors. Positioning marker 108. These carrier alignment marks 108 can be disposed on the diagonal of the sorting carrier 100, and these map positioning marks 208 can be disposed on the diagonal of the bad crystal map 200. Thus, as shown in FIG. 7, when the bad crystal map 200 is overlaid on the sorting carrier 100, by aligning the map positioning marks 208 with the carrier positioning marks 108, respectively, this can align the bad crystal marks 202 to their corresponding positions. There are damaged grains 102. In this embodiment, the carrier positioning marks 108 may be pre-formed on the sorting carrier 100 by printing using a printing module added to the AOI device after being subjected to automated optical inspection (AOI). Above, but the invention is not limited thereto.
請再參考圖5,在本實施例中,分選載體100可包括一框體100a及一藍膜100b,藍膜100b張置於框體100a上,這些晶粒102黏附至藍膜100b,且這些載體定位標記108可位在框體100a。當框體100a為透明或半透明時,可透過框體100a看見這些地圖定位標記208,以將這些地圖定位標記208分別對準這些載體定位標記108,以將壞晶標記202對準至其所對應有損傷的晶粒102。Referring to FIG. 5 again, in the embodiment, the sorting carrier 100 may include a frame 100a and a blue film 100b. The blue film 100b is placed on the frame 100a, and the die 102 is adhered to the blue film 100b. These carrier positioning marks 108 can be located in the housing 100a. When the frame 100a is transparent or translucent, the map positioning marks 208 can be seen through the frame 100a to align the map positioning marks 208 with the carrier positioning marks 108, respectively, to align the bad crystal marks 202 to their positions. Corresponding to the damaged die 102.
綜上所述,在本發明中,將機器觀測的步驟移至分選的步驟之後,以取代習知的人工目檢步驟,故可消除人為判斷對於晶粒損傷判定的不確定性,因而提高晶粒損傷判定的一致性,同時省去人工目檢的時間成本。此外,在本發明中,增加了描繪壞晶地圖的步驟,而壞晶地圖則應用作為挑除壞晶(有損傷晶粒)時的參考。In summary, in the present invention, the step of machine observation is moved to the step of sorting to replace the conventional manual visual inspection step, so that the uncertainty of the determination of the grain damage by human judgment can be eliminated, thereby improving Consistency in grain damage determination, while eliminating the time cost of manual visual inspection. Further, in the present invention, the step of depicting a bad crystal map is added, and the bad crystal map is applied as a reference when picking up bad crystals (damaged crystal grains).
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and any one of ordinary skill in the art can make some changes and refinements without departing from the spirit and scope of the present invention. The scope of the invention is defined by the scope of the appended claims.
S110~S150‧‧‧步驟S110~S150‧‧‧Steps
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| TWI805564B (en) | 2018-01-25 | 2023-06-21 | 晶元光電股份有限公司 | Chip transferring method and the apparatus thereof |
| TWI682492B (en) * | 2018-03-23 | 2020-01-11 | 旺矽科技股份有限公司 | Chip picking asembly and chip moving method |
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| TW200905774A (en) * | 2007-07-31 | 2009-02-01 | King Yuan Electronics Co Ltd | Method for marking wafer, method for marking failed die, method for aligning wafer and wafer test equipment |
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| TW201518710A (en) | 2015-05-16 |
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