TWI489003B - Processing chamber with heated chamber liner - Google Patents
Processing chamber with heated chamber liner Download PDFInfo
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- TWI489003B TWI489003B TW097103305A TW97103305A TWI489003B TW I489003 B TWI489003 B TW I489003B TW 097103305 A TW097103305 A TW 097103305A TW 97103305 A TW97103305 A TW 97103305A TW I489003 B TWI489003 B TW I489003B
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- 238000012545 processing Methods 0.000 title claims description 57
- 238000010438 heat treatment Methods 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 24
- 238000005086 pumping Methods 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 15
- 238000007789 sealing Methods 0.000 claims description 14
- 230000008569 process Effects 0.000 claims description 13
- 239000000919 ceramic Substances 0.000 claims description 8
- 230000008878 coupling Effects 0.000 claims description 4
- 238000010168 coupling process Methods 0.000 claims description 4
- 238000005859 coupling reaction Methods 0.000 claims description 4
- 239000012530 fluid Substances 0.000 claims description 2
- 238000011282 treatment Methods 0.000 claims description 2
- 238000013022 venting Methods 0.000 claims 3
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 14
- 239000000463 material Substances 0.000 description 12
- 238000012546 transfer Methods 0.000 description 11
- 239000007789 gas Substances 0.000 description 9
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 9
- 238000009826 distribution Methods 0.000 description 7
- 238000001816 cooling Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 210000004907 gland Anatomy 0.000 description 2
- 239000013529 heat transfer fluid Substances 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000009828 non-uniform distribution Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- 238000009827 uniform distribution Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4409—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Resistance Heating (AREA)
Description
本發明之實施例一般涉及一種半導體處理室,特別是一種用於一半導體處理室之襯墊組件。Embodiments of the present invention generally relate to a semiconductor processing chamber, and more particularly to a gasket assembly for a semiconductor processing chamber.
半導體處理包括數種不同的化學及物理製程,藉此,在基板上產生微小的積體電路。構成積體電路的材料層係藉由化學氣相沉積、物理氣相沉積、磊晶生長等方式形成。部分材料層則利用光阻光罩及濕式或乾式蝕刻技術而圖案化。用於形成積體電路之基板可以為矽、砷化鎵、磷化銦、玻璃或其他適當材料。Semiconductor processing involves several different chemical and physical processes whereby a tiny integrated circuit is created on the substrate. The material layer constituting the integrated circuit is formed by chemical vapor deposition, physical vapor deposition, epitaxial growth, or the like. Some of the material layers are patterned using a photoresist mask and wet or dry etching techniques. The substrate used to form the integrated circuit can be germanium, gallium arsenide, indium phosphide, glass, or other suitable material.
在積體電路之製造過程中,電漿製程通常係用於多種材料層之沉積或蝕刻。電漿製程相對於熱製程而提供更多優點。舉例來說,相對於類似之熱製程,電漿輔助化學氣相沉積(PECVD)允許沉積製程在更低溫及更高沉積速率下進行。因此,PECVD對於具有嚴謹熱預算(thermal budget)之積體電路製造是有利的,例如用於超大型或極大型積體電路(VLSI或ULSI)元件製造。In the fabrication of integrated circuits, the plasma process is typically used for the deposition or etching of multiple layers of material. The plasma process offers more advantages over the thermal process. For example, plasma assisted chemical vapor deposition (PECVD) allows the deposition process to be carried out at lower temperatures and higher deposition rates relative to similar thermal processes. Therefore, PECVD is advantageous for the fabrication of integrated circuits having a rigorous thermal budget, such as for the fabrication of very large or very large integrated circuits (VLSI or ULSI) components.
在電漿製程中卻遭遇一問題,即在處理過程中於處理室內的非均一溫度分佈。在部分系統中,二相對電極係設置在處理室中,並在處理室之中央區域界定一處理區域。相對設置之電極係用於在處理區域中維持一電漿。電漿提供用於處理設置在腔室中之基板的游離能及熱能。電漿及 熱能一般係集中在處理室之中央區域,故在處理室之中央及側邊區域(例如側壁)則形成一溫度梯度。A problem encountered in the plasma process is the non-uniform temperature distribution within the process chamber during processing. In some systems, two opposing electrode systems are disposed in the processing chamber and define a processing region in a central region of the processing chamber. The oppositely disposed electrodes are used to maintain a plasma in the processing area. The plasma provides free energy and thermal energy for processing the substrate disposed in the chamber. Plasma and Thermal energy is generally concentrated in the central region of the processing chamber, so a temperature gradient is formed in the center and side regions (e.g., sidewalls) of the processing chamber.
在具有相鄰處理室或是其他用於加熱腔室之一區(或是側邊)更甚於另一區之外部熱源的處理系統中,溫度變化會更為劇烈。舉例來說,在一處理室主體中,其具有由一共用內壁所分隔開之二電漿處理區域,內壁係由來自兩區域之電漿所加熱,外壁則是僅由其中之一電漿加熱,藉此,產生一非平衡之熱負載,因而使得外壁相較於內壁而更為低溫。此低溫可能會導致製程氣體或前驅物凝結在具有較低溫度的壁表面,因而造成微粒產生並導致沉積薄膜之污染。In a processing system having an adjacent processing chamber or other external heat source for heating one of the chambers (or the sides) and more than the other, the temperature change is more severe. For example, in a processing chamber body, it has two plasma processing regions separated by a common inner wall, the inner wall is heated by plasma from two regions, and the outer wall is only one of them. The plasma is heated whereby an unbalanced thermal load is created, thereby making the outer wall cooler than the inner wall. This low temperature may cause the process gas or precursor to condense on the wall surface having a lower temperature, thereby causing the generation of particles and causing contamination of the deposited film.
在腔室內之微粒產生亦會累積在抽氣口(pumping port),且最終阻塞住抽氣口,因此需要中斷處理來清潔抽氣口。此外,腔室中的粒子可能會危及腔室密封,因而造成熱能損耗且更加惡化腔室壁之溫度均一性。The generation of particles in the chamber also accumulates in the pumping port and eventually blocks the suction port, so the process needs to be interrupted to clean the suction port. In addition, particles in the chamber can jeopardize the chamber seal, thereby causing thermal energy loss and worsening the temperature uniformity of the chamber walls.
因此,需要一種可增進沿著處理區域邊界之溫度均一性的改良方法及設備。Accordingly, there is a need for an improved method and apparatus that enhances temperature uniformity along the boundaries of a processing zone.
本發明之實施例提供一種適合在一電漿處理室中使用之加熱器襯墊組件。在部分實施例中,一種用於一處理室之襯墊組件包括:一嵌設於一主體中的加熱元件;一凸緣係由主體之一外徑往外延伸,且凸緣之一上表面具有一密封表面;以及至少一接觸墊係由凸緣之上表面延伸至一超 過密封表面之高度。Embodiments of the present invention provide a heater gasket assembly suitable for use in a plasma processing chamber. In some embodiments, a pad assembly for a processing chamber includes: a heating element embedded in a body; a flange extending outwardly from an outer diameter of the body, and having an upper surface on one of the flanges a sealing surface; and at least one contact pad extending from the upper surface of the flange to a super The height of the surface that has been sealed.
在部分實施例中,一種用於一處理室之襯墊組件包括:一陶瓷主體,其具有一內徑表面,且內徑表面係界定出一抽氣室的一部分;一抽氣孔洞係穿設於主體,並透過內徑表面而流體耦接至抽氣室;一加熱元件係嵌設於主體中;一凸緣由主體之一外徑往外延伸,且具有一上表面,凸緣之上表面的一部分係具有一密封表面;至少一接觸墊係由凸緣之上表面延伸至一超過密封表面之高度;至少一熱扼流器係界定在凸緣中;一凹部係形成於上表面中而位於密封表面及接觸墊之間。接觸墊、扼流器及凹部係促使對襯墊組件之溫度的控制。In some embodiments, a gasket assembly for a processing chamber includes: a ceramic body having an inner diameter surface, the inner diameter surface defining a portion of a pumping chamber; and a suction hole system for threading The body is fluidly coupled to the pumping chamber through the inner diameter surface; a heating element is embedded in the body; a flange extends outwardly from an outer diameter of the body and has an upper surface, the upper surface of the flange One portion has a sealing surface; at least one contact pad extends from the upper surface of the flange to a height exceeding the sealing surface; at least one thermal choke is defined in the flange; a recess is formed in the upper surface and located Between the sealing surface and the contact pads. Contact pads, chokes, and recesses promote control of the temperature of the gasket assembly.
在其他部分之實施例中,一種用於一處理室之襯墊組件包括:一環狀陶瓷加熱器襯墊,加熱器襯墊具有至少一嵌設之加熱器。加熱器襯墊具有一接觸墊,且接觸墊係配置以使加熱器襯墊與處理室之間的接觸區域最小化;一環狀陶瓷抽氣襯墊,係設置而鄰近加熱器襯墊,並位於加熱器襯墊之徑向內側,抽氣襯墊具有複數個穿設於其中之抽氣口,該些抽氣口係配置以允許氣體進入界定在抽氣襯墊與加熱器襯墊之間的一抽氣室;一中間襯墊係設置而鄰近加熱器襯墊,並位於加熱器襯墊之徑向內側,且鄰近抽氣襯墊而位於抽氣襯墊下方;一管狀套管,係耦接至中間襯墊,套管具有穿設於其中的一基板通道,以允許基板通過襯墊組件。In other embodiments, a gasket assembly for a processing chamber includes an annular ceramic heater gasket having at least one embedded heater. The heater pad has a contact pad and the contact pad is configured to minimize contact area between the heater pad and the processing chamber; an annular ceramic suction pad is disposed adjacent to the heater pad and Located on a radially inner side of the heater gasket, the suction gasket has a plurality of suction ports disposed therein, the suction ports being configured to allow gas to enter a boundary defined between the suction gasket and the heater gasket a pumping chamber; an intermediate gasket disposed adjacent to the heater gasket and located radially inward of the heater gasket and adjacent to the suction gasket and located below the suction cushion; a tubular sleeve coupled To the intermediate liner, the sleeve has a substrate passageway disposed therein to allow the substrate to pass through the liner assembly.
本發明之襯墊組件係有利地使得腔室主體與襯墊組件之間的熱傳輸最小化。在部分實施例中,襯墊組件可配置以補償襯墊組件之非均一加熱,藉此,襯墊組件的溫度可維持而具有均一或非均一之分佈。The pad assembly of the present invention advantageously minimizes heat transfer between the chamber body and the pad assembly. In some embodiments, the pad assembly can be configured to compensate for non-uniform heating of the pad assembly whereby the temperature of the pad assembly can be maintained with a uniform or non-uniform distribution.
本發明之實施例係參照電漿輔助化學氣相沉積(PECVD)系統而概要描述如下。可適用而受益於本發明之PECVD系統的實例包括PRODUCER® SE CVD系統或是DXZ® CVD系統,兩者皆購自加州聖克拉拉的應用材料公司(Applied Materials, Inc.)。PRODUCER® SE CVD系統(例如200mm或300mm)具有二分離設置的處理區域,其可用於沉積碳摻雜氧化矽以及其他材料,並描述於美國專利第5,855,681號及第6,495,233號中。DXZ® CVD室係於美國專利第6,364,954號中揭露。雖然示範性實施例包括二處理區域,但亦可預期本發明亦有益於具有單一處理區域之系統。亦可預期本發明係有益於其他電漿室,包括蝕刻室、離子佈植室、電漿處理室及剝除室。亦可預期本發明有益於來自其他製造商之電漿處理室。Embodiments of the present invention are generally described below with reference to a plasma assisted chemical vapor deposition (PECVD) system. PECVD system is applicable to a benefit of the present invention include PRODUCER ® SE CVD system or DXZ ® CVD system, both of which are commercially available from Applied Materials, Inc. of Santa Clara, California (Applied Materials, Inc.). PRODUCER ® SE CVD system (e.g., 200mm or 300mm) having two isolated processing regions is provided, which can be used for depositing a carbon-doped silicon oxide, and other materials, and is described in U.S. Patent No. 5,855,681 and second No. 6,495,233. The DXZ ® CVD chamber is disclosed in U.S. Patent No. 6,364,954. While the exemplary embodiment includes two processing regions, it is also contemplated that the present invention is also beneficial to systems having a single processing region. It is also contemplated that the present invention is beneficial to other plasma chambers, including etch chambers, ion implant chambers, plasma processing chambers, and strip chambers. It is also contemplated that the present invention is beneficial to plasma processing chambers from other manufacturers.
「第1圖」係為PECVD系統100之部分剖面視圖,其具有本發明之腔室襯墊組件127的一實施例。PECVD系統100一般包括一腔室主體102,該腔室主體102具有一側壁112、一底壁116及一內壁101,以界定出一對處理區域120A-B。各個處理區域120A-B係呈相似配置,故基於簡潔目的,在此僅描述處理區域120B中的部件。"FIG. 1" is a partial cross-sectional view of a PECVD system 100 having an embodiment of a chamber liner assembly 127 of the present invention. The PECVD system 100 generally includes a chamber body 102 having a sidewall 112, a bottom wall 116, and an inner wall 101 to define a pair of processing regions 120A-B. The various processing regions 120A-B are similarly configured, so for the sake of brevity, only the components in the processing region 120B are described herein.
臺座128係設置於處理區域120B中,並穿過形成在 系統100中的底壁116之通道122。臺座128係適於在其上表面之上支撐基板(圖中未示)。臺座128可包括加熱元件,例如電阻元件,以加熱和控制基板溫度在一期望製程溫度下。可選擇地,可藉由遠端加熱元件(例如燈組件)來加熱臺座128。The pedestal 128 is disposed in the processing area 120B and is formed through Channel 122 of bottom wall 116 in system 100. The pedestal 128 is adapted to support a substrate (not shown) above its upper surface. The pedestal 128 can include a heating element, such as a resistive element, to heat and control the substrate temperature at a desired process temperature. Alternatively, the pedestal 128 can be heated by a remote heating element, such as a light assembly.
臺座128藉由一軸桿126而耦接至驅動系統103,藉以控制臺座128在處理區域120B中的高度。遮蔽環106可設置在臺座128的周圍,並且在臺座128的一期望高度之處,遮蔽環106會與基板接合。The pedestal 128 is coupled to the drive system 103 by a shaft 126 whereby the height of the console mount 128 in the processing zone 120B. The shadow ring 106 can be disposed about the pedestal 128, and at a desired height of the pedestal 128, the shadow ring 106 can engage the substrate.
桿130通過形成在底壁116中之通道124,並用於啟動穿設於該臺座128之基板舉升銷161。基板舉升銷161可選擇性地將基板與臺座128間隔開,以利於利用機械手臂(圖中未示)調換基板,而該機械手臂係透過基板傳輸口160而將基板傳輸進出處理區域120B。The rod 130 passes through a passage 124 formed in the bottom wall 116 and serves to activate the substrate lift pin 161 that is threaded through the pedestal 128. The substrate lift pin 161 can selectively space the substrate from the pedestal 128 to facilitate replacement of the substrate by a robot arm (not shown), and the robot arm transmits the substrate into and out of the processing region 120B through the substrate transfer port 160. .
腔室蓋104係耦接至腔室主體102的頂端部分。腔室蓋104容納更多穿設於其中的氣體分配系統108。氣體分配系統108包括氣體入口通道140,其透過噴氣頭組件142而將反應物及清潔氣體輸送至處理區域120B中。噴氣頭組件142包括一環狀基部平板148,而平板148具有設置而居於其與面板146之間的阻隔板144。RF(射頻)源165係耦接至噴氣頭組件142。RF源165供應功率至噴氣頭組件142,以利於在噴氣頭組件142之面板146與加熱的臺座128之間產生電漿。在一實施例中,RF源165可以為高頻射頻(HFRF)功率源,例如13.56 MHz RF產生器。在另一實施例中,RF源165可包括一HFRF功率源及一低頻 射頻(LFRF)功率源,例如300kHz RF產生器。可選擇地,RF源可耦接至處理室100的其他部分(例如臺座128),以利於電漿的產生。介電隔離器158係設置於腔室蓋104與噴氣頭組件142之間,以預防RF功率傳導至腔室蓋104。The chamber cover 104 is coupled to the top end portion of the chamber body 102. The chamber cover 104 houses more of the gas distribution system 108 disposed therein. Gas distribution system 108 includes a gas inlet passage 140 that delivers reactants and cleaning gases to treatment zone 120B through jet head assembly 142. The air jet head assembly 142 includes an annular base plate 148, and the plate 148 has a baffle 144 disposed between it and the face plate 146. An RF (radio frequency) source 165 is coupled to the jet head assembly 142. The RF source 165 supplies power to the jet head assembly 142 to facilitate the generation of plasma between the face plate 146 of the jet head assembly 142 and the heated pedestal 128. In an embodiment, the RF source 165 can be a high frequency radio frequency (HFRF) power source, such as a 13.56 MHz RF generator. In another embodiment, the RF source 165 can include an HFRF power source and a low frequency A radio frequency (LFRF) power source, such as a 300 kHz RF generator. Alternatively, the RF source can be coupled to other portions of the process chamber 100 (eg, pedestal 128) to facilitate plasma generation. A dielectric isolator 158 is disposed between the chamber cover 104 and the jet head assembly 142 to prevent RF power from being conducted to the chamber cover 104.
可選擇地,冷卻通道147係形成於氣體分配系統108之環狀基部平板148中,以在操作過程中冷卻環狀基部平板148。熱傳流體(例如水或類似者)可循環通過冷卻通道147,藉此,基部平板148可維持在一預定溫度下。Optionally, a cooling passage 147 is formed in the annular base plate 148 of the gas distribution system 108 to cool the annular base plate 148 during operation. A heat transfer fluid (e.g., water or the like) can be circulated through the cooling passage 147 whereby the base plate 148 can be maintained at a predetermined temperature.
腔室襯墊組件127係設置在處理區域120B內而非常鄰近於腔室主體102之內壁101及側壁112,以預防內壁101及側壁112暴露於處理區域120B中的惡劣處理環境。襯墊組件127包括一周圍抽氣室125,而該抽氣室125係耦接至抽氣系統164,抽氣系統164則配置以將廢氣及副產物排出處理區域120B,並控制處理區域120B中的壓力。複數個排氣口131可形成於腔室襯墊組件127中。排氣口131係配置以允許來自處理區域120B的氣流以一方式流至周圍抽氣室125中,而此方式係促進沉積系統100中所進行之處理。The chamber liner assembly 127 is disposed within the processing region 120B and is in close proximity to the inner wall 101 and sidewalls 112 of the chamber body 102 to prevent the inner wall 101 and sidewalls 112 from being exposed to the harsh processing environment in the processing region 120B. The pad assembly 127 includes a peripheral pumping chamber 125 coupled to the pumping system 164, and the pumping system 164 is configured to exhaust exhaust gases and by-products from the processing region 120B and control the processing region 120B. pressure. A plurality of exhaust ports 131 may be formed in the chamber liner assembly 127. The vent 131 is configured to allow airflow from the processing zone 120B to flow into the surrounding plenum 125 in a manner that facilitates processing in the deposition system 100.
「第2圖」係為「第1圖」之襯墊組件127的部分剖面視圖。襯墊組件127係滑入腔室主體102之內壁101及側壁112中,藉此,處理區域120B限制在襯墊組件127內。襯墊組件127可快速地自腔室主體102移除,藉此,有利於在數次處理循環之後,襯墊組件127的替換。襯墊組件127一般藉由設置在襯墊組件127或腔室主體102中 的密封套290內的密封件(例如O型圈)而密接至腔室主體102。"Picture 2" is a partial cross-sectional view of the spacer assembly 127 of "Fig. 1". The pad assembly 127 slides into the inner wall 101 and the side walls 112 of the chamber body 102, whereby the processing region 120B is confined within the pad assembly 127. The pad assembly 127 can be quickly removed from the chamber body 102, thereby facilitating replacement of the pad assembly 127 after several processing cycles. The pad assembly 127 is typically disposed in the pad assembly 127 or the chamber body 102 A seal (eg, an O-ring) within the gland 290 is intimately attached to the chamber body 102.
在一實施例中,襯墊組件127可包括一單一整合式主體,以利於襯墊組件127自腔室主體102的安裝及移除。在另一實施例中,襯墊組件127可包括一系列的分隔襯墊,該些襯墊可堆疊或鄰接在一起,以減少在使用過程中的熱膨脹,及/或有利於襯墊組件127之安裝及移除。In an embodiment, the cushion assembly 127 can include a single integrated body to facilitate installation and removal of the cushion assembly 127 from the chamber body 102. In another embodiment, the cushion assembly 127 can include a series of separate liners that can be stacked or abutted together to reduce thermal expansion during use and/or to facilitate the cushion assembly 127 Install and remove.
在「第2圖」所示之實施例中,襯墊組件127包括加熱器襯墊202、抽氣襯墊204、上中部襯墊206、下中部襯墊208及底部襯墊210。襯墊202、204、206、208一般係由陶瓷或其他適合材料製成。在一實施例中,襯墊202、204、206、208可各自分隔開,並配置以允許其間之相對運動,因此可調適在處理過程中熱膨脹所造成的可能錯配情形(mismatch),藉此,預防部件裂開或受到傷害。襯墊202、204、206、208係可選擇地以一方式而連鎖(interlock),而此方式提供增強的機械強度、操作容易度及/或維持定向。In the embodiment shown in FIG. 2, the pad assembly 127 includes a heater pad 202, a suction pad 204, an upper middle pad 206, a lower middle pad 208, and a bottom pad 210. The pads 202, 204, 206, 208 are typically made of ceramic or other suitable material. In one embodiment, the pads 202, 204, 206, 208 can each be spaced apart and configured to allow relative movement therebetween, thereby adapting to possible mismatches caused by thermal expansion during processing, Therefore, the prevention component is cracked or damaged. The pads 202, 204, 206, 208 are optionally interlocked in a manner that provides enhanced mechanical strength, ease of operation, and/or maintain orientation.
底部襯墊210可以由陶瓷或鋁製成,且一般係配置以覆蓋住腔室主體102的底壁116。在一實施例中,底部襯墊210一般呈碟狀。The bottom liner 210 can be made of ceramic or aluminum and is generally configured to cover the bottom wall 116 of the chamber body 102. In an embodiment, the bottom liner 210 is generally dished.
上中部襯墊206與下中部襯墊208一般為環狀。上中部襯墊206包括狹縫、切縫或裂縫,以允許耦接至加熱器襯墊202的套管可延伸進入基板傳輸口160,如下將進一步描述。Upper central liner 206 and lower central liner 208 are generally annular. The upper middle liner 206 includes slits, slits or slits to allow the sleeve coupled to the heater liner 202 to extend into the substrate transfer port 160 as will be further described below.
加熱器襯墊202包括一或多個加熱器212。加熱器212 可以為一供熱傳流體流經襯墊202之導管,或是一電阻加熱元件。在「第2圖」所示之實施例中,加熱器212為耦接至功率供應系統214之電阻加熱元件。Heater gasket 202 includes one or more heaters 212. Heater 212 It can be a conduit for a heat transfer fluid to flow through the liner 202, or a resistive heating element. In the embodiment shown in FIG. 2, heater 212 is a resistive heating element coupled to power supply system 214.
如「第3圖」之加熱器襯墊202的部分上視圖所示,加熱器導線304由凸出部302(由加熱器襯墊202之上周圍延伸出)離開加熱器襯墊202。導線304可包括一連接器306,其在襯墊組件127之移除/替換時係利於自功率供應系統214的快速耦接/去耦接。功率供應系統214係適於可控地加熱腔室襯墊202,藉此允許腔室襯墊202在電漿處理過程中維持在預定溫度範圍內。As shown in a partial top view of heater pad 202 of "FIG. 3", heater wire 304 exits heater pad 202 by projection 302 (extending from the periphery of heater pad 202). The wire 304 can include a connector 306 that facilitates rapid coupling/decoupling from the power supply system 214 when the pad assembly 127 is removed/replaced. The power supply system 214 is adapted to controllably heat the chamber liner 202, thereby allowing the chamber liner 202 to be maintained within a predetermined temperature range during plasma processing.
加熱器212可經配置以使得襯墊202的一區域相對於另一區域具有更高之熱容量(heating capacity),藉此,襯墊202之一區域相對於另一區域的加熱程度較高。來自加熱器212而傳導至襯墊202的熱差異可用於補償藉由其他來源之不均勻加熱或冷卻,故襯墊202具有均勻之溫度分佈,或是產生非均勻之襯墊溫度分佈。在其他實施例中,加熱器212控制加熱器襯墊202的溫度介於約100℃~約200℃,但是當使用由適當之高溫材料所製成的密封件時,亦可使用較高之襯墊溫度。The heater 212 can be configured such that one region of the liner 202 has a higher heating capacity relative to another region, whereby one region of the liner 202 is heated to a greater extent relative to the other region. The difference in heat conducted from heater 212 to pad 202 can be used to compensate for uneven heating or cooling by other sources, such that pad 202 has a uniform temperature profile or produces a non-uniform pad temperature profile. In other embodiments, the heater 212 controls the temperature of the heater liner 202 to be between about 100 ° C and about 200 ° C, but a higher liner can be used when using a seal made of a suitable high temperature material. Pad temperature.
「第4A及4B圖」係繪示襯墊202的另一實施例之上方視圖及剖面視圖。在「第4A及4B圖」所示之實施例中,襯墊202的加熱器212係由複數個加熱元件402(例如插裝式加熱器;cartridge heater)構成。加熱元件402可排置在襯墊202之周圍,例如設置在襯墊202中所形成的孔洞404中。各個加熱元件402可獨立地控制以產生預定的 襯墊溫度分佈。在另一實施例中,加熱元件402的間隔或熱容量可經選擇以產生預定的襯墊溫度分佈。舉例來說,位於抽氣襯墊204之抽氣孔洞(於下方示於「第5圖」的564)上方的加熱器襯墊202區域可具有較高密度的加熱元件402,以補償由於通過孔洞之高流速所造成的升高之熱傳(相較於襯墊202之其他區域)。4A and 4B are a top view and a cross-sectional view showing another embodiment of the spacer 202. In the embodiment shown in Figures 4A and 4B, the heater 212 of the gasket 202 is constructed of a plurality of heating elements 402 (e.g., cartridge heaters). The heating element 402 can be disposed about the liner 202, such as in a hole 404 formed in the liner 202. Each heating element 402 can be independently controlled to produce a predetermined Pad temperature distribution. In another embodiment, the spacing or heat capacity of the heating elements 402 can be selected to produce a predetermined pad temperature profile. For example, the region of the heater liner 202 located above the suction holes of the suction liner 204 (shown below at 564 of FIG. 5) may have a higher density of heating elements 402 to compensate for passage through the holes. The increased heat transfer caused by the high flow rate (compared to other areas of the liner 202).
參照「第2圖」,加熱器襯墊202亦包括數個特徵結構(feature),該些特徵結構係設置以減少襯墊組件127與腔室主體102之間的熱傳導。在一實施例中,加熱器襯墊202具有一上方密封表面216,且加熱器襯墊202藉由一上方接觸墊230而維持與腔室蓋104為間隔設置。上方接觸墊230由加熱器襯墊202的上方表面218延伸至一高度,而此高度係允許設置於襯墊202之表面216與腔室蓋104之間的密封件(圖中未示)的壓縮,而在密封區域(即,表面216)並無實質之腔室蓋與襯墊的接觸。凹部220係形成在上方表面218中,以增進襯墊202與腔室蓋104之熱隔絕。上方接觸墊230使得腔室蓋104與腔室襯墊202之間的接觸區域最小化,同時,凹部220使得其間的熱傳間隙最大化,藉此,可使得腔室蓋104與襯墊202之間的熱傳量降低。Referring to "Fig. 2", heater pad 202 also includes a plurality of features that are configured to reduce heat transfer between pad assembly 127 and chamber body 102. In one embodiment, the heater liner 202 has an upper sealing surface 216 and the heater liner 202 is maintained spaced from the chamber lid 104 by an upper contact pad 230. The upper contact pad 230 extends from the upper surface 218 of the heater pad 202 to a height that allows for compression of a seal (not shown) disposed between the surface 216 of the pad 202 and the chamber cover 104. There is no substantial chamber cover contact with the liner in the sealed area (ie, surface 216). A recess 220 is formed in the upper surface 218 to enhance thermal isolation of the gasket 202 from the chamber cover 104. The upper contact pad 230 minimizes the contact area between the chamber cover 104 and the chamber liner 202, while the recess 220 maximizes the heat transfer gap therebetween, thereby allowing the chamber cover 104 and the liner 202 to be The heat transfer between them is reduced.
在一實施例中,加熱器襯墊202的上表面218設置有18個圓柱型接觸襯墊230。亦可預期針對特定之製程需求及腔室設計配置而以不同方式配置不同數量、直徑、形狀及分佈的接觸墊230。In an embodiment, the upper surface 218 of the heater liner 202 is provided with 18 cylindrical contact pads 230. It is also contemplated that different numbers, diameters, shapes, and distributions of contact pads 230 can be configured differently for specific process requirements and chamber design configurations.
襯墊202及腔室主體102之間設置有對準特徵結構。 在一實施例中,對準特徵結構可以形成為單一元件,或是設置在加熱器襯墊202之下方表面224上且排列成極性陣列(polar array)的複數個元件。可選擇地,對準特徵結構可以形成在腔室主體102的一部分中,而此部分之上方係與加熱器襯墊202為間隔設置。在「第2圖」所示之實施例中,對準特徵結構包括一孔222以及一緊配插入件226。插入件226可以為銷之形式,且延伸於腔室主體102及加熱器襯墊202之間,以維持該些部件在一預定之定向。銷(例如:插入件226)可以自腔室主體102或加熱器襯墊202之至少其中之一者延伸,並可以由具有相較於襯墊202為低的熱傳速率之材料製成。An alignment feature is disposed between the liner 202 and the chamber body 102. In an embodiment, the alignment features can be formed as a single component or as a plurality of components disposed on the lower surface 224 of the heater pad 202 and arranged in a polar array. Alternatively, the alignment features may be formed in a portion of the chamber body 102 with the upper portion of the portion spaced from the heater liner 202. In the embodiment shown in FIG. 2, the alignment features include a hole 222 and a mating insert 226. The insert 226 can be in the form of a pin and extends between the chamber body 102 and the heater liner 202 to maintain the components in a predetermined orientation. The pin (eg, insert 226) can extend from at least one of the chamber body 102 or the heater liner 202 and can be made of a material having a lower heat transfer rate than the liner 202.
加熱器襯墊202包括一主體240,而主體240具有一藉由其內徑所界定出之抽氣室125。上方外凸緣242由主體240之頂部往外延伸。熱扼流器244係形成在凸緣242中而位於接觸墊230之內側,藉以使得由主體240流至接觸墊230的熱流最小化。扼流器244降低接觸墊230的接觸區域,並用於使得至腔室主體之熱損耗最小化,且可同時保護設置於密封套290中的密封件(例如:O型圈,圖中未示)而使其不受高溫(其可能會破壞O型圈或是密封件的完整性)影響。The heater liner 202 includes a body 240 having a pumping chamber 125 defined by its inner diameter. The upper outer flange 242 extends outwardly from the top of the body 240. A thermal choke 244 is formed in the flange 242 to be located inside the contact pad 230, thereby minimizing heat flow from the body 240 to the contact pad 230. The choke 244 reduces the contact area of the contact pad 230 and serves to minimize heat loss to the chamber body and simultaneously protect the seals disposed in the gland 290 (eg, O-rings, not shown) It is not affected by high temperatures (which may damage the O-ring or the integrity of the seal).
在一實施例中,熱扼流器244係為一形成在凸緣242中的環狀溝槽。在另一實施例中,熱扼流器244係為形成在凸緣242中的複數溝槽片段,例如:7個溝槽片段。在熱扼流器244之任一側而耦接部分凸緣242的網狀凸緣材料係經選擇以控制流經扼流器244的熱流速,在部分實施 例中,此材料可經選擇而使得熱以不同之速率通過沿著加熱器襯墊202之不同角位置的扼流器244區域,藉此,可增進對於襯墊202之溫度分佈的控制。In one embodiment, the thermal choke 244 is an annular groove formed in the flange 242. In another embodiment, the thermal choke 244 is a plurality of trench segments formed in the flange 242, such as: 7 trench segments. The mesh flange material that couples the partial flange 242 on either side of the thermal choke 244 is selected to control the flow rate of heat through the choke 244, partially implemented In this example, the material can be selected such that heat passes through the region of the choke 244 at different angular positions along the heater pad 202 at different rates, thereby enhancing control of the temperature profile of the pad 202.
上方內部凸緣246係由主體240往內延伸於抽氣室125上方。下方內部凸緣248由主體240往內延伸於抽氣室125下方。裙部250由凸緣248往下延伸。在一實施例中,至少一凸緣246、248將抽氣襯墊204支撐於其上。The upper inner flange 246 extends inwardly from the body 240 through the plenum 125. The lower inner flange 248 extends inwardly from the body 240 below the pumping chamber 125. The skirt 250 extends downwardly from the flange 248. In an embodiment, at least one flange 246, 248 supports the air extraction cushion 204 thereon.
抽氣襯墊204包括一主體252,該主體252具有穿設於其中之排氣口131、一逐漸變細之上方內部部分254、一上方外部突唇256以及一下方內部突唇258。該逐漸變細之上方內部部分254係配置以維持襯墊組件127與激發面板146之間的一間隙。上方外部突唇256係與加熱器襯墊202之上方內部凸緣246交錯設置,其中下方內部突唇258係配置以在臺座128移至鄰近傳輸口160之下方位置時用以支撐遮蔽環106。The suction cushion 204 includes a body 252 having an exhaust port 131 disposed therein, a tapered upper inner portion 254, an upper outer lip 256, and a lower inner lip 258. The tapered upper inner portion 254 is configured to maintain a gap between the pad assembly 127 and the excitation panel 146. The upper outer lip 256 is staggered with the upper inner flange 246 of the heater pad 202, wherein the lower inner lip 258 is configured to support the shadow ring 106 when the pedestal 128 is moved to a position below the transfer port 160. .
「第5圖」係為襯墊組件127之另一部分剖面視圖,其繪示界定在襯墊組件127之抽氣室125至形成於腔室主體102中的抽氣口502之抽氣路徑。襯墊組件127的加熱器襯墊202及/或抽氣襯墊204係配置以與入口襯墊510接合,其提供襯墊給延伸於抽氣室125與抽氣口502之間的通道。入口襯墊510一般包括插入件512及管狀物514。FIG. 5 is a cross-sectional view of another portion of the pad assembly 127 showing the pumping path defined by the pumping chamber 125 of the pad assembly 127 to the air extraction port 502 formed in the chamber body 102. The heater liner 202 and/or the suction liner 204 of the gasket assembly 127 are configured to engage the inlet gasket 510, which provides a gasket for passage extending between the pumping chamber 125 and the suction port 502. The inlet liner 510 generally includes an insert 512 and a tubular 514.
插入件512包括一逐漸變細及/或漸減外徑516,其有利於插入件512插入穿設於腔室主體102之實質水平的通道504中,並可突破進入抽氣口502。管狀物514包括一開孔(cut-out)522,以容設插入件512的末端,藉此, 插入件512與管狀物514的內部通道518、520在抽氣口502的開口處形成一線型導管。管狀物514亦包括一突出部562,且突出部562延伸至室排氣口564,而該室排氣口564穿設於抽氣襯墊204並與界定在其中之抽氣室125為流體連通。The insert 512 includes a tapered and/or tapered outer diameter 516 that facilitates insertion of the insert 512 into a substantially horizontal passage 504 that is threaded through the chamber body 102 and that can be breached into the suction port 502. The tube 514 includes a cut-out 522 to receive the end of the insert 512 whereby The insert 512 and the internal passages 518, 520 of the tubular 514 form a linear conduit at the opening of the suction port 502. The tube 514 also includes a protrusion 562, and the protrusion 562 extends to the chamber exhaust port 564, and the chamber exhaust port 564 is disposed through the air suction pad 204 and is in fluid communication with the pumping chamber 125 defined therein. .
入口襯墊510係在剩餘之襯墊組件127之前設置。首先,插入件512係設置在水平通道504中。接著將管狀物514安裝在插入件512上,藉此,開孔522與插入件512接合,且通道518、520係對準。接著安裝上中部襯墊206以及下中部襯墊208以維持入口襯墊510定位。加熱器襯墊202及抽氣襯墊204可接著設置在上中部襯墊206之上。The inlet gasket 510 is disposed prior to the remaining liner assembly 127. First, the insert 512 is disposed in the horizontal channel 504. The tubular 514 is then mounted on the insert 512 whereby the aperture 522 engages the insert 512 and the channels 518, 520 are aligned. The upper middle liner 206 and the lower middle liner 208 are then installed to maintain the inlet liner 510 in position. Heater pad 202 and suction pad 204 can then be placed over upper central pad 206.
「第6A及6B圖」係為加熱器襯墊202之一實施例的底視圖及側視圖。加熱器襯墊202包括一狹縫600,以允許基板通過腔室襯墊組件127。狹縫600一般係經定位而與加熱器襯墊202之凸出部302相對設置,並且垂直於抽氣襯墊204中的室排氣口564。鄰近於狹縫600之加熱器襯墊202的外徑604包括二安裝墊602。安裝墊602係利於管狀套管606耦接至加熱器襯墊202(如「第6C圖」之加熱器襯墊202與套管606之底視圖所示)。加熱器襯墊202與套管606可以利用任何適當方式耦接,例如,藉由緊固件610,該緊固件610係延伸穿過一穿設於加熱器襯墊202之間隙孔612,並且與套管606中的螺紋孔614接合。當緊配時,套管606之基板通道616(以虛線顯示)係與襯墊202之狹縫600對準,以利於基板傳輸通過襯墊組件127。一般來說,在安裝加熱器襯墊202之前,套管 606首先滑入基板傳輸口160中。"Figs. 6A and 6B" are a bottom view and a side view of an embodiment of the heater pad 202. The heater liner 202 includes a slit 600 to allow the substrate to pass through the chamber liner assembly 127. The slit 600 is generally positioned opposite the projection 302 of the heater pad 202 and perpendicular to the chamber vent 564 in the suction pad 204. The outer diameter 604 of the heater liner 202 adjacent the slit 600 includes two mounting pads 602. Mounting pad 602 facilitates coupling of tubular sleeve 606 to heater liner 202 (as shown in the bottom view of heater liner 202 and sleeve 606 of Figure 6C). The heater gasket 202 and the sleeve 606 can be coupled by any suitable means, for example, by fasteners 610 that extend through a clearance hole 612 that is threaded through the heater gasket 202, and The threaded holes 614 in the tube 606 are engaged. When mated, the substrate channel 616 of the sleeve 606 (shown in phantom) is aligned with the slit 600 of the liner 202 to facilitate transport of the substrate through the liner assembly 127. Generally, before installing the heater gasket 202, the casing The 606 first slides into the substrate transfer port 160.
因此,本發明提供一加熱之腔室襯墊組件。該加熱之腔室襯墊組件提供熱能以加熱中央處理區域,並實質與腔室壁與腔室蓋之熱效應隔絕,藉此,允許實現腔室襯墊組件之預定溫度分佈。Accordingly, the present invention provides a heated chamber liner assembly. The heated chamber liner assembly provides thermal energy to heat the central processing zone and is substantially isolated from the thermal effects of the chamber wall and the chamber cover, thereby allowing a predetermined temperature profile of the chamber liner assembly to be achieved.
惟本發明雖以較佳實施例說明如上,然其並非用以限定本發明,任何熟習此技術人員,在不脫離本發明的精神和範圍內所作的更動與潤飾,仍應屬本發明的技術範疇。However, the present invention has been described above by way of a preferred embodiment, and is not intended to limit the present invention. Any modification and refinement made by those skilled in the art without departing from the spirit and scope of the present invention should still belong to the technology of the present invention. category.
100‧‧‧系統/處理室100‧‧‧System/Processing Room
101‧‧‧內壁101‧‧‧ inner wall
102‧‧‧腔室主體102‧‧‧ chamber body
103‧‧‧驅動系統103‧‧‧Drive system
104‧‧‧腔室蓋104‧‧‧Case cover
106‧‧‧遮蔽環106‧‧‧ shadow ring
108‧‧‧氣體分配系統108‧‧‧Gas distribution system
112‧‧‧側壁112‧‧‧ side wall
116‧‧‧底壁116‧‧‧ bottom wall
120A-B‧‧‧處理區域120A-B‧‧‧Processing area
124‧‧‧通道124‧‧‧ channel
125‧‧‧抽氣室125‧‧‧ pumping room
126‧‧‧軸桿126‧‧‧ shaft
127‧‧‧襯墊組件127‧‧‧Cushion assembly
128‧‧‧臺座128‧‧‧ pedestal
130‧‧‧桿130‧‧‧ rod
131‧‧‧排氣口131‧‧‧Exhaust port
140‧‧‧通道140‧‧‧ channel
142‧‧‧噴氣頭組件142‧‧‧Air jet head assembly
144‧‧‧阻隔板144‧‧‧Baffle
146‧‧‧面板146‧‧‧ panel
147‧‧‧冷卻通道147‧‧‧Cooling channel
148‧‧‧平板148‧‧‧ tablet
158‧‧‧隔離器158‧‧‧Isolator
160‧‧‧傳輸口160‧‧‧Transportation port
161‧‧‧舉升銷161‧‧‧Promotion
164‧‧‧抽氣系統164‧‧‧Exhaust system
165‧‧‧RF源/射頻源165‧‧‧RF source/RF source
202,204,206,208,210‧‧‧襯墊202,204,206,208,210‧‧‧ pads
212‧‧‧加熱器212‧‧‧heater
214‧‧‧功率供應系統214‧‧‧Power supply system
216‧‧‧表面216‧‧‧ surface
218‧‧‧表面218‧‧‧ surface
220‧‧‧凹部220‧‧‧ recess
222‧‧‧孔222‧‧‧ hole
224‧‧‧表面224‧‧‧ surface
226‧‧‧插入件226‧‧‧ inserts
230‧‧‧接觸墊230‧‧‧Contact pads
240‧‧‧主體240‧‧‧ Subject
242‧‧‧凸緣242‧‧‧Flange
244‧‧‧扼流器244‧‧‧Current
246‧‧‧凸緣246‧‧‧Flange
248‧‧‧凸緣248‧‧‧Flange
250‧‧‧裙部250‧‧‧ skirt
252‧‧‧主體252‧‧‧ Subject
254‧‧‧上方內部部分254‧‧‧ upper internal part
256‧‧‧突唇256‧‧‧ lip
258‧‧‧突唇258‧‧‧ lip
290‧‧‧密封套290‧‧‧seal sleeve
302‧‧‧凸出部302‧‧‧ protruding parts
304‧‧‧導線304‧‧‧ wire
306‧‧‧連接器306‧‧‧Connector
402‧‧‧加熱元件402‧‧‧ heating element
404‧‧‧孔洞404‧‧‧ hole
502‧‧‧抽氣口502‧‧‧Exhaust port
504‧‧‧通道504‧‧‧ channel
510‧‧‧襯墊510‧‧‧ cushion
512‧‧‧插入件512‧‧‧ inserts
514‧‧‧管狀物514‧‧‧ tubular
516‧‧‧外徑516‧‧‧ outside diameter
518‧‧‧通道518‧‧‧ channel
520‧‧‧通道520‧‧‧ channel
522‧‧‧開孔522‧‧‧Opening
562‧‧‧突出部562‧‧‧Protruding
564‧‧‧抽氣孔洞/室排氣口564‧‧‧Exhaust hole/chamber exhaust
600‧‧‧狹縫600‧‧‧slit
602‧‧‧安裝墊602‧‧‧ mounting mat
604‧‧‧外徑604‧‧‧ outside diameter
606‧‧‧套管606‧‧‧ casing
610‧‧‧緊固件610‧‧‧fasteners
612‧‧‧間隙孔612‧‧‧ clearance holes
614‧‧‧螺紋孔614‧‧‧Threaded holes
616‧‧‧通道616‧‧‧ channel
為了讓本發明之上方描述特徵更為詳細了解,本發明之簡單摘要如上的特定說明可參照實施例,且部分實施例係繪示於所附圖式中。For a more detailed description of the above described features of the invention, reference should be made to
第1圖,繪示根據本發明之一實施例的PECVD系統之剖面視圖;第2圖,繪示第1圖之襯墊組件的部分剖面視圖,其具有一加熱器襯墊;第3圖,繪示第2圖之加熱器襯墊的部分上視圖;第4A~4B圖,繪示加熱器襯墊之另一實施例的部分上視圖及剖面視圖;第5圖,繪示入口襯墊之一實施例的另一部分剖面視圖;第6A~6B圖,繪示上中部襯墊之一實施例的底視圖及剖面視圖;以及 第6C圖,繪示耦接至第6A~6B圖之上中部襯墊的基板傳輸口套管的底視圖。1 is a cross-sectional view of a PECVD system in accordance with an embodiment of the present invention; and FIG. 2 is a partial cross-sectional view of the pad assembly of FIG. 1 having a heater pad; FIG. 2 is a partial top view and a cross-sectional view showing another embodiment of the heater gasket; and FIG. 5 is a cross-sectional view showing another embodiment of the heater gasket; Another partial cross-sectional view of an embodiment; FIGS. 6A-6B illustrate a bottom view and a cross-sectional view of one embodiment of the upper middle liner; FIG. 6C is a bottom view showing the substrate transfer port sleeve coupled to the middle liner above the 6A-6B.
須注意的是,雖然所附圖式揭露本發明特定實施例,但其並非用以限定本發明之精神與範圍,任何熟習此技藝者,當可作各種之更動與潤飾而得等效實施例。It is to be understood that the specific embodiments of the invention are not to be construed as limiting the scope of the invention. .
為便於了解,圖式中相同的元件符號表示相同的元件。某一實施例採用的元件當不需特別詳述而可應用到其他實施例。For the sake of understanding, the same component symbols in the drawings denote the same components. The components employed in one embodiment may be applied to other embodiments without particular detail.
102‧‧‧腔室主體102‧‧‧ chamber body
104‧‧‧腔室蓋104‧‧‧Case cover
106‧‧‧遮蔽環106‧‧‧ shadow ring
112‧‧‧側壁112‧‧‧ side wall
120B‧‧‧處理區域120B‧‧‧Processing area
125‧‧‧抽氣室125‧‧‧ pumping room
127‧‧‧襯墊組件127‧‧‧Cushion assembly
128‧‧‧臺座128‧‧‧ pedestal
131‧‧‧排氣口131‧‧‧Exhaust port
146‧‧‧面板146‧‧‧ panel
158‧‧‧隔離器158‧‧‧Isolator
202,204,206,208,210‧‧‧襯墊202,204,206,208,210‧‧‧ pads
212‧‧‧加熱器212‧‧‧heater
216‧‧‧表面216‧‧‧ surface
218‧‧‧表面218‧‧‧ surface
220‧‧‧凹部220‧‧‧ recess
222‧‧‧孔222‧‧‧ hole
224‧‧‧表面224‧‧‧ surface
226‧‧‧插入件226‧‧‧ inserts
230‧‧‧接觸墊230‧‧‧Contact pads
240‧‧‧主體240‧‧‧ Subject
242‧‧‧凸緣242‧‧‧Flange
244‧‧‧扼流器244‧‧‧Current
246‧‧‧凸緣246‧‧‧Flange
248‧‧‧凸緣248‧‧‧Flange
250‧‧‧裙部250‧‧‧ skirt
252‧‧‧主體252‧‧‧ Subject
254‧‧‧上方內部部分254‧‧‧ upper internal part
256‧‧‧突唇256‧‧‧ lip
258‧‧‧突唇258‧‧‧ lip
290‧‧‧密封套290‧‧‧seal sleeve
Claims (26)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/668,947 US8444926B2 (en) | 2007-01-30 | 2007-01-30 | Processing chamber with heated chamber liner |
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| Publication Number | Publication Date |
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| TW200900539A TW200900539A (en) | 2009-01-01 |
| TWI489003B true TWI489003B (en) | 2015-06-21 |
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| TW097103305A TWI489003B (en) | 2007-01-30 | 2008-01-29 | Processing chamber with heated chamber liner |
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| US (1) | US8444926B2 (en) |
| KR (1) | KR101464292B1 (en) |
| CN (1) | CN101589175B (en) |
| TW (1) | TWI489003B (en) |
| WO (1) | WO2008094752A1 (en) |
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Also Published As
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|---|---|
| KR20090117755A (en) | 2009-11-12 |
| CN101589175B (en) | 2014-03-19 |
| CN101589175A (en) | 2009-11-25 |
| WO2008094752A1 (en) | 2008-08-07 |
| TW200900539A (en) | 2009-01-01 |
| US20080178797A1 (en) | 2008-07-31 |
| US8444926B2 (en) | 2013-05-21 |
| KR101464292B1 (en) | 2014-11-21 |
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