TWI485790B - Fine pitch bump manufacturing method and structure thereof - Google Patents
Fine pitch bump manufacturing method and structure thereof Download PDFInfo
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- TWI485790B TWI485790B TW101105174A TW101105174A TWI485790B TW I485790 B TWI485790 B TW I485790B TW 101105174 A TW101105174 A TW 101105174A TW 101105174 A TW101105174 A TW 101105174A TW I485790 B TWI485790 B TW I485790B
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Description
本發明係有關於一種凸塊製造方法,特別係有關於一種防止銅離子游離之微細間距凸塊製造方法。
The present invention relates to a method of manufacturing a bump, and more particularly to a method of manufacturing a fine pitch bump for preventing copper ions from being released.
在微細間距凸塊結構中,由於銅凸塊之銅離子會產生游離現象,因此若相鄰銅凸塊之間距太近,容易導致短路之情形發生。
In the fine pitch bump structure, since copper ions of the copper bumps are free, if the distance between adjacent copper bumps is too close, a short circuit may easily occur.
本發明之主要目的係在於提供一種微細間距凸塊製造方法,其包含下列步驟:提供一矽基板,該矽基板係具有一表面、複數個設置於該表面之銲墊及一設置於該表面之保護層,該保護層係具有複數個開口,且該些開口係顯露該些銲墊;形成一含鈦金屬層於該保護層及該些銲墊,該含鈦金屬層係具有複數個第一區及複數個位於該些第一區外側之第二區;形成一光阻層於該含鈦金屬層;圖案化該光阻層以形成複數個開槽,該些開槽係對應該含鈦金屬層之該些第一區;形成複數個銅凸塊於該含鈦金屬層之該些第一區,各該銅凸塊係具有一第一頂面及一第一環壁;進行一加熱步驟,以擴大該光阻層之各該開槽,且該光阻層係受熱形成為複數個本體部及複數個可移除部;對該光阻層進行一蝕刻步驟,以移除該些可移除部並顯露出該含鈦金屬層,且各該本體部係具有一內側壁;形成複數個凸塊保護層於該含鈦金屬層、各該銅凸塊之該第一頂面及該第一環壁,各該凸塊保護層係具有一凸塊覆蓋部及一金屬層覆蓋部,該凸塊覆蓋部係包覆各該銅凸塊之該第一頂面及該第一環壁且該凸塊覆蓋部係具有一第二頂面及一第二環壁,該光阻層之各該本體部之該內側壁及該第二環壁之間係具有一空間;電鍍複數個金層於各該空間、各該凸塊覆蓋部之該第二頂面及該第二環壁且各該金層係具有一第三頂面;移除該光阻層之該些本體部;以及移除該含鈦金屬層之該些第二區,以使該含鈦金屬層之各該第一區形成為一位於各該銅凸塊下之凸塊下金屬層,且各該凸塊下金屬層係具有一位於各該銅凸塊下之凸塊承載部及一凸出於各該銅凸塊之該第一環壁之延伸部,各該凸塊保護層之該金屬層覆蓋部係覆蓋各該凸塊下金屬層之該延伸部。藉由在該含鈦金屬層、各該銅凸塊之該第一頂面及該第一環壁上形成該些凸塊保護層及該些金層,可防止該些銅凸塊中之銅離子游離而造成短路之情形,進而提高微細間距凸塊結構之可靠度。The main object of the present invention is to provide a method for manufacturing fine pitch bumps, comprising the steps of: providing a germanium substrate having a surface, a plurality of pads disposed on the surface, and a surface disposed on the surface a protective layer, the protective layer having a plurality of openings, wherein the openings expose the pads; forming a titanium-containing metal layer on the protective layer and the pads, the titanium-containing metal layer having a plurality of first And a plurality of second regions located outside the first regions; forming a photoresist layer on the titanium-containing metal layer; patterning the photoresist layer to form a plurality of trenches, the trenches should contain titanium The first regions of the metal layer; forming a plurality of copper bumps in the first regions of the titanium-containing metal layer, each of the copper bumps having a first top surface and a first ring wall; performing a heating a step of expanding the respective trenches of the photoresist layer, and the photoresist layer is formed by heat forming a plurality of body portions and a plurality of removable portions; and performing an etching step on the photoresist layer to remove the portions Removable portion and revealing the titanium-containing metal layer, and each of the sheets The rib has an inner sidewall; a plurality of bump protective layers are formed on the titanium-containing metal layer, the first top surface of each of the copper bumps, and the first annular wall, each of the bump protective layers having a bump a cover portion and a metal layer covering portion, the bump cover portion covers the first top surface of each of the copper bumps and the first ring wall, and the bump cover portion has a second top surface and a first a second ring wall having a space between the inner sidewall of the body portion and the second ring wall of the photoresist layer; plating a plurality of gold layers in each of the spaces and the second portion of each of the bump covering portions a top surface and the second annular wall and each of the gold layers has a third top surface; removing the body portions of the photoresist layer; and removing the second regions of the titanium-containing metal layer to enable Each of the first regions of the titanium-containing metal layer is formed as a under bump metal layer under each of the copper bumps, and each of the under bump metal layers has a bump carrier under each of the copper bumps. And a portion of the first ring wall protruding from each of the copper bumps, the metal layer covering portion of each of the bump protection layers covering each of the under bump metal layers The extension portion. The copper in the copper bumps can be prevented by forming the bump protection layer and the gold layers on the first metal top layer and the first top surface of the copper bumps. The ion is free to cause a short circuit, thereby improving the reliability of the fine pitch bump structure.
請參閱第1及2A至2L圖,其係本發明之一較佳實施例,一種微細間距凸塊製造方法係包含下列步驟:首先,請參閱第1圖之步驟11及2A圖,提供一矽基板110,該矽基板110係具有一表面111、複數個設置於該表面111之銲墊112及一設置於該表面111之保護層113,該保護層113係具有複數個開口113a,且該些開口113a係顯露該些銲墊112;接著,請參閱第1圖之步驟12及2B圖,形成一含鈦金屬層200於該保護層113及該些銲墊112,該含鈦金屬層200係具有複數個第一區210及複數個位於該些 第一區210外側之第二區220;之後,請參閱第1圖之步驟13及2C圖,形成一光阻層300於該含鈦金屬層200;接著,請參閱第1圖之步驟14及2D圖,圖案化該光阻層300以形成複數個開槽310,該些開槽310係對應該含鈦金屬層200之該些第一區210;之後,請參閱第1圖之步驟15及2E圖,形成複數個銅凸塊120於該含鈦金屬層200之該些第一區210,各該銅凸塊120係具有一第一頂面121及一第一環壁122;接著,請參閱第1圖之步驟16及2F圖,進行一加熱步驟,以擴大該光阻層300之各該開槽310,且該光阻層300係受熱形成為複數個本體部320及複數個可移除部330,在本實施例中,該加熱步驟之玻璃轉換溫度係介於70~140℃之間。Referring to FIGS. 1 and 2A to 2L, which are a preferred embodiment of the present invention, a method for manufacturing a fine pitch bump includes the following steps: First, please refer to steps 11 and 2A of FIG. 1 to provide a The substrate 110 has a surface 111, a plurality of pads 112 disposed on the surface 111, and a protective layer 113 disposed on the surface 111. The protective layer 113 has a plurality of openings 113a, and the plurality of openings 113a Openings 113a expose the pads 112; then, referring to steps 12 and 2B of FIG. 1, forming a titanium-containing metal layer 200 on the protective layer 113 and the pads 112, the titanium-containing metal layer 200 Having a plurality of first zones 210 and a plurality of a second region 220 outside the first region 210; thereafter, please refer to steps 13 and 2C of FIG. 1 to form a photoresist layer 300 on the titanium-containing metal layer 200; then, refer to step 14 of FIG. 1 and 2D, the photoresist layer 300 is patterned to form a plurality of trenches 310, which are corresponding to the first regions 210 of the titanium metal layer 200; afterwards, please refer to step 15 of FIG. 1 and 2E, forming a plurality of copper bumps 120 in the first regions 210 of the titanium-containing metal layer 200, each of the copper bumps 120 having a first top surface 121 and a first ring wall 122; Referring to steps 16 and 2F of FIG. 1, a heating step is performed to enlarge each of the trenches 310 of the photoresist layer 300, and the photoresist layer 300 is formed by heat into a plurality of body portions 320 and a plurality of movable portions. In addition to the portion 330, in the present embodiment, the glass transition temperature of the heating step is between 70 and 140 °C.
之後,請參閱第1圖之步驟17及2G圖,對該光阻層300進行一蝕刻步驟,以移除該些可移除部330並顯露出該含鈦金屬層200,且各該本體部320係具有一內側壁321,在本實施例中,對該光阻層300進行一蝕刻步驟中所使用之蝕刻方法係為電漿乾式蝕刻法;接著,請參閱第1圖之步驟18及2H圖,形成複數個凸塊保護層130於該含鈦金屬層200、各該銅凸塊120之該第一頂面121及該第一環壁122,該些凸塊保護層130之材質係選自於鎳、鈀或金其中之一,各該凸塊保護層130係具有一凸塊覆蓋部131及一金屬層覆蓋部132,該凸塊覆蓋部131係包覆各該銅凸塊120之該第一頂面121及該第一環壁122且該凸塊覆蓋部131係具有一第二頂面131a及一第二環壁131b,該金屬層覆蓋部132係具有一第一外側壁132a,且該金屬層覆蓋部132係凸出於該凸塊覆蓋部131之該第 二環壁131b,該光阻層300之各該本體部320之該內側壁321及該第二環壁131b之間係具有一空間S;之後,請參閱第1圖之步驟19及2I圖,電鍍複數個金層140於各該空間S、各該凸塊覆蓋部131之該第二頂面131a及該第二環壁131b,且各該金層140係具有一第三頂面141及一第二外側壁142;接著,請參閱第1圖之步驟20及2J圖,形成複數個可潤濕層150於該些金層140之該些第三頂面141。Thereafter, referring to steps 17 and 2G of FIG. 1 , an etching step is performed on the photoresist layer 300 to remove the removable portions 330 and expose the titanium-containing metal layer 200, and each of the body portions The 320 series has an inner sidewall 321 . In the embodiment, the etching method used in the etching step of the photoresist layer 300 is a plasma dry etching method; then, refer to steps 18 and 2H of FIG. 1 . The plurality of bump protection layers 130 are formed on the titanium-containing metal layer 200, the first top surface 121 of each of the copper bumps 120, and the first ring wall 122. The materials of the bump protection layers 130 are selected. Each of the bump protection layers 130 has a bump covering portion 131 and a metal layer covering portion 132. The bump covering portion 131 covers the copper bumps 120. The first top surface 121 and the first annular wall 122 and the bump covering portion 131 have a second top surface 131a and a second annular wall 131b. The metal layer covering portion 132 has a first outer sidewall 132a. And the metal layer covering portion 132 protrudes from the bump covering portion 131 a second ring wall 131b, the inner side wall 321 of the main body portion 320 of the photoresist layer 300 and the second ring wall 131b have a space S; afterwards, please refer to steps 19 and 2I of FIG. A plurality of gold layers 140 are plated in each of the spaces S, the second top surface 131a and the second ring walls 131b of the bump covering portions 131, and each of the gold layers 140 has a third top surface 141 and a The second outer sidewall 142; then, referring to steps 20 and 2J of FIG. 1, a plurality of wettable layers 150 are formed on the third top surfaces 141 of the gold layers 140.
之後,請參閱第1圖之步驟21及2K圖,移除該光阻層300之該些本體部320以顯露出該含鈦金屬層200之該些第二區220、該些金層140之該些第二外側壁142、該些可潤濕層150及該些金屬層覆蓋部132之該些第一外側壁132a,在本實施例中,各該金層140之該第二外側壁142係與各該金屬層覆蓋部132之該第一外側壁132a平齊;最後,請參閱第1圖之步驟22及2L圖,移除該含鈦金屬層200之該些第二區220,以使該含鈦金屬層200之各該第一區210形成為一位於各該銅凸塊120下之凸塊下金屬層160,該些凸塊下金屬層160之材質係選自於鈦/鎢/金、鈦/銅或鈦/鎢/銅其中之一,且各該凸塊下金屬層160係具有一位於各該銅凸塊120下之凸塊承載部161及一凸出於各該銅凸塊120之該第一環壁122之延伸部162,各該凸塊保護層130之該金屬層覆蓋部132係覆蓋各該凸塊下金屬層160之該延伸部162,且各該凸塊下金屬層160之該延伸部162係具有一第三外側壁162a,該第三外側壁162a係與各該金屬層覆蓋部132之該第一外側壁132a平齊。本發明係藉由在該含鈦金屬層200、各該銅凸塊120 之該第一頂面121及該第一環壁122上形成該些凸塊保護層130及該些金層140,以防止該些銅凸塊120中之銅離子游離而造成短路之情形,進而提高微細間距凸塊結構之可靠度。Thereafter, referring to steps 21 and 2K of FIG. 1 , the body portions 320 of the photoresist layer 300 are removed to expose the second regions 220 of the titanium-containing metal layer 200 and the gold layers 140 . The second outer sidewalls 142, the wettable layers 150, and the first outer sidewalls 132a of the metal layer covering portions 132. In this embodiment, the second outer sidewalls 142 of each of the gold layers 140. The first outer sidewalls 132a of the metal layer covering portion 132 are flush with each other; finally, referring to steps 22 and 2L of FIG. 1 , the second regions 220 of the titanium-containing metal layer 200 are removed to Each of the first regions 210 of the titanium-containing metal layer 200 is formed as a lower under bump metal layer 160 under each of the copper bumps 120. The under bump metal layer 160 is selected from titanium/tungsten. One of gold/titanium/copper or titanium/tungsten/copper, and each of the under bump metal layers 160 has a bump bearing portion 161 under each of the copper bumps 120 and a copper protruding from each of the copper bumps The extending portion 162 of the first ring wall 122 of the bump 120, the metal layer covering portion 132 of each of the bump protecting layers 130 covers the extending portion 162 of each of the under bump metal layers 160, and each of the bumps under The metal layer extending portion 162 of the system 160 having a third outer side wall 162a, 162a of the third system and the outer wall of the metal layer covering each of the first portion 132 of the outer wall 132a flush. The present invention is achieved by the titanium-containing metal layer 200 and each of the copper bumps 120. The bump protection layer 130 and the gold layer 140 are formed on the first top surface 121 and the first ring wall 122 to prevent the copper ions in the copper bumps 120 from being freed and causing a short circuit. Improve the reliability of fine pitch bump structures.
請再參閱第2L圖,其係本發明之一較佳實施例之一種微細間距凸塊結構100,其包含有一矽基板110、複數個凸塊下金屬層160、複數個銅凸塊120、複數個凸塊保護層130、複數個金層140以及複數個可潤濕層150,該矽基板110係具有一表面111、複數個設置於該表面111之銲墊112及一設置於該表面111之保護層113,該保護層113係具有複數個開口113a,且該些開口113a係顯露該些銲墊112,該些凸塊下金屬層160係形成於該些銲墊112,該些凸塊下金屬層160之材質係選自於鈦/鎢/金、鈦/銅或鈦/鎢/銅其中之一,各該凸塊下金屬層160係具有一凸塊承載部161及一延伸部162,該些銅凸塊120係形成於該些凸塊下金屬層160,且各該銅凸塊120係具有一第一頂面121及一第一環壁122,各該凸塊下金屬層160之該凸塊承載部161係位於各該銅凸塊120下,各該凸塊下金屬層160之該延伸部162係凸出於各該銅凸塊120之該第一環壁122,該些凸塊保護層130係形成於該些凸塊下金屬層160之該些延伸部162、各該銅凸塊120之該第一頂面121及該第一環壁122,各該凸塊保護層130係具有一凸塊覆蓋部131及一金屬層覆蓋部132,該些凸塊保護層130之材質係選自於鎳、鈀或金其中之一,各該凸塊覆蓋部131係包覆各該銅凸塊120之該第一頂面121及該第一環壁122且該凸塊覆蓋部131係具有一第二頂面131a及一第二環壁131b,各該金屬層覆蓋部132係覆蓋各該延伸部162,各該金屬層覆蓋部132係具有一第一外側壁132a且該金屬層覆蓋部132係凸出於該凸塊覆蓋部131之該第二環壁131b,該些金層140係形成於各該金屬層覆蓋部132、各該凸塊覆蓋部131之該第二頂面131a及該第二環壁131b且各該金層140係具有一第三頂面141及一第二外側壁142,該第二外側壁142係與各該金屬層覆蓋部132之該第一外側壁132a平齊,該些可潤濕層150係形成於該些金層140之該些第三頂面141,在本實施例中,各該凸塊下金屬層160之該延伸部162係具有一第三外側壁162a,該第三外側壁162a係與各該金屬層覆蓋部132之該第一外側壁132a平齊。
本發明之保護範圍當視後附之申請專利範圍所界定者為準,任何熟知此項技藝者,在不脫離本發明之精神和範圍內所作之任何變化與修改,均屬於本發明之保護範圍。
Referring to FIG. 2L, a fine pitch bump structure 100 according to a preferred embodiment of the present invention includes a germanium substrate 110, a plurality of under bump metal layers 160, a plurality of copper bumps 120, and a plurality a bump protection layer 130, a plurality of gold layers 140, and a plurality of wettable layers 150. The germanium substrate 110 has a surface 111, a plurality of pads 112 disposed on the surface 111, and a surface 112 disposed thereon. The protective layer 113 has a plurality of openings 113a, and the openings 113a expose the pads 112. The under bump metal layers 160 are formed on the pads 112, and the bumps are under the bumps The material of the metal layer 160 is selected from one of titanium/tungsten/gold, titanium/copper or titanium/tungsten/copper. Each of the under bump metal layers 160 has a bump bearing portion 161 and an extending portion 162. The copper bumps 120 are formed on the under bump metal layers 160, and each of the copper bumps 120 has a first top surface 121 and a first ring wall 122, and each of the under bump metal layers 160 The bump bearing portion 161 is located under each of the copper bumps 120, and the extending portion 162 of each of the under bump metal layers 160 protrudes from the copper The first ring wall 122 of the block 120, the bump protection layer 130 is formed on the extension portions 162 of the under bump metal layers 160, the first top surface 121 of each of the copper bumps 120, and the The first ring wall 122 has a bump covering portion 131 and a metal layer covering portion 132. The material of the bump protecting layer 130 is selected from one of nickel, palladium or gold. Each of the bump covering portions 131 covers the first top surface 121 and the first ring wall 122 of each of the copper bumps 120, and the bump covering portion 131 has a second top surface 131a and a second portion. Each of the metal layer covering portions 132 has a first outer sidewall 132a and the metal layer covering portion 132 protrudes from the bump covering portion. The second ring wall 131b of the 131 is formed on each of the metal layer covering portions 132, the second top surface 131a and the second ring wall 131b of each of the bump covering portions 131, and each of the gold layers The layer 140 has a third top surface 141 and a second outer sidewall 142. The second outer sidewall 142 is flush with the first outer sidewall 132a of each of the metal layer covering portions 132. The third layer 141 is formed on the third top surface 141 of the gold layer 140. In this embodiment, the extension portion 162 of each of the under bump metal layers 160 has a third outer sidewall 162a. The third outer sidewall 162a is flush with the first outer sidewall 132a of each of the metal layer covering portions 132.
The scope of the present invention is defined by the scope of the appended claims, and any changes and modifications made by those skilled in the art without departing from the spirit and scope of the invention are within the scope of the present invention. .
11...提供一矽基板11. . . Providing a substrate
12...形成一含鈦金屬層於該保護層及該些銲墊,該含鈦金屬層係具有複數個第一區及複數個位於該些第一區外側之第二區12. . . Forming a titanium-containing metal layer on the protective layer and the pads, the titanium-containing metal layer having a plurality of first regions and a plurality of second regions located outside the first regions
13...形成一光阻層於該含鈦金屬層13. . . Forming a photoresist layer on the titanium-containing metal layer
14...圖案化該光阻層以形成複數個開槽,該些開槽係對應該含鈦金屬層之該些第一區14. . . Patterning the photoresist layer to form a plurality of trenches, the plurality of trenches being opposite to the first regions containing a titanium metal layer
15...形成複數個銅凸塊於該些第一區,各該銅凸塊係具有一第一頂面及一第一環壁15. . . Forming a plurality of copper bumps in the first regions, each of the copper bumps having a first top surface and a first ring wall
16...進行一加熱步驟,以擴大該光阻層之各該開槽,且該光阻層係受熱形成為複數個本體部及複數個可移除部16. . . Performing a heating step to enlarge each of the grooves of the photoresist layer, and the photoresist layer is heated to form a plurality of body portions and a plurality of removable portions
17...對該光阻層進行一蝕刻步驟,以移除該些可移除部並顯露出該含鈦金屬層,且各該本體部係具有一內側壁17. . . Performing an etching step on the photoresist layer to remove the removable portions and reveal the titanium-containing metal layer, and each of the body portions has an inner sidewall
18...形成複數個凸塊保護層於該含鈦金屬層、各該銅凸塊之該第一頂面及該第一環壁18. . . Forming a plurality of bump protection layers on the titanium-containing metal layer, the first top surface of each of the copper bumps, and the first ring wall
19...電鍍複數個金層19. . . Plating multiple layers of gold
20...形成複數個可潤濕層20. . . Forming a plurality of wettable layers
21...移除該光阻層之該些本體部twenty one. . . Removing the body portions of the photoresist layer
22...移除該含鈦金屬層之該些第二區,以使該含鈦金屬層之各該第一區形成為一位於各該銅凸塊下之凸塊下金屬層twenty two. . . Removing the second regions of the titanium-containing metal layer such that each of the first regions of the titanium-containing metal layer is formed as a lower under bump metal layer under each of the copper bumps
100...微細間距凸塊結構100. . . Fine pitch bump structure
110...矽基板110. . .矽 substrate
111...表面111. . . surface
112...銲墊112. . . Solder pad
113...保護層113. . . The protective layer
113a...開口113a. . . Opening
120...銅凸塊120. . . Copper bump
121...第一頂面121. . . First top surface
122...第一環壁122. . . First ring wall
130...凸塊保護層130. . . Bump protection layer
131...凸塊覆蓋部131. . . Bump cover
131a...第二頂面131a. . . Second top surface
131b...第二環壁131b. . . Second ring wall
132...金屬層覆蓋部132. . . Metal layer covering
132a...第一外側壁132a. . . First outer side wall
140...金層140. . . Gold layer
141‧‧‧第三頂面141‧‧‧ third top surface
142‧‧‧第二外側壁142‧‧‧Second outer side wall
150‧‧‧可潤濕層150‧‧‧ Wettable layer
160‧‧‧凸塊下金屬層160‧‧‧ under bump metal layer
161‧‧‧凸塊承載部161‧‧‧Bump bearing
162‧‧‧延伸部162‧‧‧Extension
162a‧‧‧第三外側壁162a‧‧‧ third outer side wall
200‧‧‧含鈦金屬層200‧‧‧Titanium-containing metal layer
210‧‧‧第一區210‧‧‧First District
220‧‧‧第二區220‧‧‧Second District
300‧‧‧光阻層300‧‧‧ photoresist layer
310‧‧‧開槽310‧‧‧ slotting
320‧‧‧本體部320‧‧‧ Body Department
321‧‧‧內側壁321‧‧‧ inner side wall
330‧‧‧可移除部330‧‧‧Removable Department
S‧‧‧空間S‧‧‧ Space
第1圖:依據本發明之一較佳實施例,一種微細間距凸塊製造方法之流程圖。
第2A至2L圖:依據本發明之一較佳實施例,一種微細間距凸塊製造方法之截面示意圖。
Figure 1 is a flow chart showing a method of manufacturing fine pitch bumps in accordance with a preferred embodiment of the present invention.
2A to 2L are schematic cross-sectional views showing a method of manufacturing a fine pitch bump according to a preferred embodiment of the present invention.
100...微細間距凸塊結構100. . . Fine pitch bump structure
110...矽基板110. . .矽 substrate
112...銲墊112. . . Solder pad
113...保護層113. . . The protective layer
120...銅凸塊120. . . Copper bump
121...第一頂面121. . . First top surface
122...第一環壁122. . . First ring wall
130...凸塊保護層130. . . Bump protection layer
131...凸塊覆蓋部131. . . Bump cover
131a...第二頂面131a. . . Second top surface
131b...第二環壁131b. . . Second ring wall
132...金屬層覆蓋部132. . . Metal layer covering
132a...第一外側壁132a. . . First outer side wall
140...金層140. . . Gold layer
141...第三頂面141. . . Third top surface
142...第二外側壁142. . . Second outer side wall
150...可潤濕層150. . . Wettable layer
160...凸塊下金屬層160. . . Under bump metal layer
161...凸塊承載部161. . . Bump bearing
162...延伸部162. . . Extension
162a...第三外側壁162a. . . Third outer side wall
Claims (10)
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| TW101105174A TWI485790B (en) | 2012-02-17 | 2012-02-17 | Fine pitch bump manufacturing method and structure thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW101105174A TWI485790B (en) | 2012-02-17 | 2012-02-17 | Fine pitch bump manufacturing method and structure thereof |
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| Publication Number | Publication Date |
|---|---|
| TW201336002A TW201336002A (en) | 2013-09-01 |
| TWI485790B true TWI485790B (en) | 2015-05-21 |
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| US20190206822A1 (en) * | 2017-12-30 | 2019-07-04 | Intel Corporation | Missing bump prevention from galvanic corrosion by copper bump sidewall protection |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7008867B2 (en) * | 2003-02-21 | 2006-03-07 | Aptos Corporation | Method for forming copper bump antioxidation surface |
| TWM410659U (en) * | 2011-05-20 | 2011-09-01 | Chipbond Technology Corp | Bump structure |
| TW201138040A (en) * | 2010-04-22 | 2011-11-01 | Taiwan Semiconductor Mfg | Integrated circuit devices and method of forming a bump structure |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7008867B2 (en) * | 2003-02-21 | 2006-03-07 | Aptos Corporation | Method for forming copper bump antioxidation surface |
| TW201138040A (en) * | 2010-04-22 | 2011-11-01 | Taiwan Semiconductor Mfg | Integrated circuit devices and method of forming a bump structure |
| TWM410659U (en) * | 2011-05-20 | 2011-09-01 | Chipbond Technology Corp | Bump structure |
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