TWI485360B - Apparatus and method for measuring through-pass twinning - Google Patents
Apparatus and method for measuring through-pass twinning Download PDFInfo
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
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- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
- G01N21/95692—Patterns showing hole parts, e.g. honeycomb filtering structures
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
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Description
本發明與用於量測直通矽晶穿孔(TSV)的設備及方法有關,而更特別的係與使用一數位可變光圈,透過一干涉計量測直通矽晶穿孔或其他類似穿孔孔洞的設備及方法有關。The present invention relates to apparatus and methods for measuring through-thin twinned vias (TSVs), and more particularly to apparatus for measuring through-pass perforations or other similar perforated holes through an interferometric measurement using a digitally variable aperture. And related methods.
對於一高整合半導體電路而言,透過曝光方式已經達到精細的線寬度。然而,可實現的線寬度卻受限於折射限制。For a highly integrated semiconductor circuit, a fine line width has been achieved by exposure. However, the achievable line width is limited by the refractive limit.
為了克服此問題,已經提出使用極紫外光或其他類似光線的方法,其具有短於可見光的波長,以降低折射限制,也提出使用三維(3D)半導體封裝處理的方法,其中許多完全處理的晶圓晶片係經垂直堆疊以增加整合度,也提出了許多方法。In order to overcome this problem, a method using extreme ultraviolet light or other similar light having a wavelength shorter than visible light to reduce the refractive limit has been proposed, and a method of processing using a three-dimensional (3D) semiconductor package, in which many fully processed crystals are also proposed Circular wafers are stacked vertically to increase integration, and many methods have been proposed.
在許多晶圓晶片係經垂直堆疊的三維半導體封裝處理中,多數個別晶圓層的電路必須經電氣連接,以形成在許多堆疊晶圓晶片之間一電氣訊號的傳輸與接收。對於該等晶 圓層之間的電氣連接而言,稱為「直通矽晶穿孔」(此後,稱為穿孔孔洞)的窄長孔洞係形成於一矽晶圓中,並利用一傳導材料填充,以藉此連接該等晶圓層的該等電路。一般而言,可藉由深蝕刻或其他類似方式達成一直通矽晶穿孔(TSV)處理。In a vertically stacked three-dimensional semiconductor package process in which many wafers are stacked, most of the individual wafer layer circuits must be electrically connected to form an electrical signal transmission and reception between a plurality of stacked wafer wafers. For the crystal For the electrical connection between the circular layers, a narrow hole called a "straight through-perforation" (hereinafter, referred to as a perforated hole) is formed in a wafer and filled with a conductive material to thereby connect The circuits of the wafer layers. In general, through-silicon via (TSV) processing can be achieved by deep etching or other similar means.
同時,該等穿孔孔洞必須在一晶圓上形成為具有相同深度與直徑。如果,在直徑或深度不同,當在研磨之後將該晶圓晶片堆疊在另一晶圓晶片時,某些電路可能無法電氣連接,藉此造成一種有缺陷的產品。因此,在該三維半導體封裝處理中,一重要的程序為檢查在該晶圓中形成之穿孔孔洞是否具有一預定的深度與直徑。At the same time, the perforated holes must be formed to have the same depth and diameter on a wafer. If, depending on the diameter or depth, when the wafer wafer is stacked on another wafer wafer after grinding, some circuits may not be electrically connected, thereby causing a defective product. Therefore, in the three-dimensional semiconductor package process, an important procedure is to check whether the through-holes formed in the wafer have a predetermined depth and diameter.
做為一種量測該直通矽晶穿孔以檢查該直通矽晶穿孔(也就是該穿孔孔洞)形成狀態的方法,有使用一干涉計的方法、有切割形成有該直通矽晶穿孔之該晶圓的一部分,並利用一掃描式電子顯微鏡(SEM)檢查該晶圓的方法,以及其他方法。As a method of measuring the through-twisting perforation to inspect the formation state of the through-twist perforation (that is, the perforation hole), there is a method of using an interferometer, and the wafer having the through-twisted perforation formed by cutting Part of it, and using a scanning electron microscope (SEM) to examine the wafer, as well as other methods.
在這些方法之中,於使用干涉計的方法中,最典型的干涉計為一白光干涉計(WLI),其中來自一光源的光被分裂為兩光線,因此該兩光線於彼此垂直的方向中移動,並接著組合在一起,藉此根據在兩光線之間的光學路徑差異形成多數干涉條紋。Among these methods, among the methods using an interferometer, the most typical interferometer is a white light interferometer (WLI) in which light from a light source is split into two rays, so that the two rays are in a direction perpendicular to each other. Move and then combine together to form a majority of interference fringes based on the difference in optical path between the two rays.
然而,使用該干涉計之傳統方法具有的問題為如果朝向該直通矽晶穿孔所放射的光所穿過的透鏡為一廣角透鏡時,進入該直通矽晶穿孔之光線的入射角度將大於該直通矽 晶穿孔的直徑,而因此實質上進入該直通矽晶穿孔的光量為小,因此使其非常難以或實際是無法用於量測該直通矽晶穿孔。However, the conventional method using the interferometer has a problem that if the lens that is irradiated toward the through-twisted perforation is a wide-angle lens, the incident angle of the light entering the through-twisted perforation will be greater than the through-pass.矽 The diameter of the crystal perforations, and thus the amount of light that substantially enters the through-twisted perforations, is such that it is very difficult or practically impossible to measure the through-twisted perforations.
雖然可以置換該光源以增加抵達該直通矽晶穿孔底部的光強度,但必須沿著形成該直通矽晶穿孔的方向,於多數規則的距離處,量測朝向該直通矽晶穿孔所放射之光線的焦點。因此,需要許多時間量測該直通矽晶穿孔,而所形成的資料量過大而造成該整體系統的負擔。Although the light source can be replaced to increase the intensity of light reaching the bottom of the through-twisted perforation, the light radiated toward the through-twisted perforation must be measured at most regular distances along the direction in which the through-twisted perforations are formed. Focus. Therefore, it takes a lot of time to measure the through-twisting perforations, and the amount of data formed is too large to cause a burden on the overall system.
據此,目前已經提出對於量測該直通矽晶穿孔之設備的某些對策,以改善量測該直通矽晶穿孔的精確性,但其發展對於迫切的需求而言仍不足夠。Accordingly, some countermeasures for measuring the device for straight through twinning have been proposed to improve the accuracy of measuring the through-twisted perforation, but its development is still insufficient for urgent needs.
本發明之一態樣係提供用於量測直通矽晶穿孔(TSV)之設備與方法,其中可精確量測該直通矽晶穿孔(也就是該穿孔孔洞)的形成狀態。One aspect of the present invention provides an apparatus and method for measuring through-twisted vias (TSV) in which the formation state of the through-twist perforations (i.e., the perforated holes) can be accurately measured.
實際上,本發明之一態樣係提供用於量測直通矽晶穿孔之設備與方法,其中使用一數位可變光圈以精確量測該直通矽晶穿孔的形成狀態。In fact, one aspect of the present invention provides an apparatus and method for measuring through-twisted perforations in which a digitally variable aperture is used to accurately measure the formation state of the through-twist perforations.
同樣的,本發明之一態樣係提供用於量測直通矽晶穿孔之設備與方法,其能夠具有一簡化的結構,並能進行更有效與更精確的量測。As such, one aspect of the present invention provides an apparatus and method for measuring through-twisted perforations that can have a simplified structure and enable more efficient and accurate measurements.
此外,本發明之一態樣係提供用於量測直通矽晶穿孔之設備與方法,其能夠在於量測該直通矽晶穿孔時具有改進的方便性,並縮短量測進行的時間。Moreover, one aspect of the present invention provides an apparatus and method for measuring through-twisted perforations that can improve the ease of measurement of the through-twist perforations and reduce the time taken for the measurement.
根據本發明一具體實施例,用於量測形成於一量測物件中之一直通矽晶穿孔的設備包含:一光源、一數位可變光圈、一分光器與一偵測器,該數位可變光圈係提供於從該光源所放射之光的路徑上,並根據該直通矽晶穿孔的深寬比調整利用來自該光源所放射之光所照明的區域;該分光器將通過穿過該數位可變光圈的光分離成為多數光線,其分別在相互垂直的一第一方向與一第二方向中移動,並藉由將從佈置於該第一方向中該量測物件所反射的第一反射光與從佈置於該第二方向中之一鏡體所反射的第二反射光進行組合的方式,輸出該組合光;而該偵測器根據從該分光器所引導之該組合光量測該直通矽晶穿孔,該數位可變光圈則作為一種孔徑,其孔徑尺寸可根據該直通矽晶穿孔的深寬比而選擇性改變,而無需進行實體移動。According to an embodiment of the invention, the apparatus for measuring the through-silicon via formed in a measuring object comprises: a light source, a digital variable aperture, a beam splitter and a detector, wherein the digit can be An aperture is provided on a path of light emitted from the light source, and an area illuminated by light emitted from the light source is adjusted according to an aspect ratio of the through-twist perforation; the beam splitter will pass through the digit The light of the variable aperture is separated into a plurality of rays which are respectively moved in a first direction and a second direction which are perpendicular to each other, and are reflected by the first reflection reflected from the measurement object arranged in the first direction The combined light is outputted in combination with the second reflected light reflected from one of the mirror bodies disposed in the second direction; and the detector measures the combined light according to the guided light from the optical splitter Through the through-hole perforation, the digital iris is used as an aperture, and the aperture size can be selectively changed according to the aspect ratio of the through-twist perforation without physical movement.
在量測該直通矽晶穿孔之設備中,該數位可變光圈可利用一液晶顯示器(LCD)提供。In a device for measuring the through-twist perforation, the digital variable aperture can be provided using a liquid crystal display (LCD).
用於量測該直通矽晶穿孔之設備可以進一步包含一光量控制器,該光量控制器係提供於由該分光器所分裂並進入該鏡體之光的路徑上,並選擇性調整進入該鏡體的光量。The apparatus for measuring the through-twist perforation may further include a light quantity controller provided on a path of light split by the splitter and entering the mirror body, and selectively adjusting into the mirror The amount of light in the body.
在量測該直通矽晶穿孔之設備中,該光量控制器可根據該直通矽晶穿孔的深寬比,調整進入該鏡體的光量,其中可利用下述方程式[1]計算從該量測物件所反射之該第一反射光方程式[1]
該光量控制器將進入該鏡體的光量控制為具有大於該第一反射光之光量的0.5至2倍。The light quantity controller controls the amount of light entering the mirror body to be 0.5 to 2 times larger than the amount of light of the first reflected light.
在量測該直通矽晶穿孔之設備中,該光量控制器可利用一液晶顯示器(LCD)提供。In an apparatus for measuring the through-twist perforation, the light quantity controller can be provided using a liquid crystal display (LCD).
用於量測該直通矽晶穿孔之設備可以進一步包含一光學系統,該光學系統係提供於介於該數位可變光圈與該分光器之間,以及該分框器與一偵測器之間的至少一位置中。The apparatus for measuring the through-twist perforation may further include an optical system provided between the digital variable aperture and the optical splitter, and between the splitter and a detector At least one location.
根據本發明之一具體實施例,一量測形成於一量測物件中之一直通矽晶穿孔的方法,該方法包括:從一光源放射光;使用一數位可變光圈,以根據該直通矽晶穿孔的深寬比調整利用來自該光源所放射之光所照明的區域;將通過穿過該數位可變光圈的光分離成為多數光線,其分別在相互垂直的一第一方向與一第二方向中移動,並藉由將從佈置於該第一方向中該量測物件所反射的第一反射光與從佈置於該第二方向中之一鏡體所反射的第二反射光進行組合的方式,輸出該組合光;以及根據該組合光量測該直通矽晶穿孔,該數位可變光圈則作為一種孔徑,其孔徑尺寸可根據該直通矽晶穿孔的深寬比而選擇性改變,而無需進行實體移動。According to an embodiment of the present invention, a method for measuring a through-twisted perforation formed in a measuring object, the method comprising: emitting light from a light source; using a digital variable aperture to be based on the through pass The aspect ratio of the crystal perforation is adjusted by the region illuminated by the light emitted by the light source; the light passing through the digital variable aperture is separated into a plurality of rays, which are respectively in a first direction perpendicular to each other and a second Moving in the direction and by combining the first reflected light reflected from the measuring object arranged in the first direction with the second reflected light reflected from one of the mirror bodies arranged in the second direction And outputting the combined light according to the combined light quantity, wherein the digital variable aperture is used as an aperture, and the aperture size thereof is selectively changed according to the aspect ratio of the through-twist perforation, and No physical movement is required.
10‧‧‧光源10‧‧‧Light source
20‧‧‧數位可變光圈20‧‧‧Digital iris
22‧‧‧光傳輸區域22‧‧‧Light transmission area
30‧‧‧輔助分光器30‧‧‧Auxiliary splitter
40‧‧‧第一光學系統40‧‧‧First optical system
50‧‧‧分光器50‧‧ ‧ splitter
60‧‧‧光量控制器60‧‧‧Light quantity controller
70‧‧‧鏡體70‧‧‧Mirror body
80‧‧‧第二光學系統8080‧‧‧Second optical system 80
90‧‧‧偵測器90‧‧‧Detector
100‧‧‧量測物件100‧‧‧Measurement objects
110‧‧‧直通矽晶穿孔110‧‧‧through through crystal perforation
本發明上述及/或其他態樣將可從該等示例具體實施例下述敘述,連結該等伴隨圖式的方式,變的明確而更能立即被理解,其中: 第1圖為根據本發明一具體實施例之一圖式,顯示用於量測直通矽晶穿孔(TSV)的設備;第2圖為根據本發明一具體實施例之一圖式,用於說明在用於量測該直通矽晶穿孔的設備中之一第一反射光(也就是試樣光)以及一第二反射光(參考光);第3圖為根據本發明一具體實施例之一圖式,用於說明在用於量測該直通矽晶穿孔的設備中之一數位可變光圈;第4圖為根據本發明一具體實施例之一圖式,用於說明在用於量測該直通矽晶穿孔的設備中之一光量控制器;第5圖為根據本發明一具體實施例之一圖式,用於說明在用於量測該直通矽晶穿孔的設備中,計算從一量測物件反射之該第一反射光的方法;第6圖與第7圖為根據本發明一具體實施例之圖式,用於說明在用於量測該直通矽晶穿孔的設備中的干涉情形;以及第8圖為根據本發明一具體實施例之圖式,用於說明透過用於量測該直通矽晶穿孔的設備,量測該直通矽晶穿孔之一實例。The above and/or other aspects of the present invention will be described in the following detailed description of the exemplary embodiments. 1 is a diagram showing an apparatus for measuring through-twisted through-hole (TSV) according to an embodiment of the present invention; and FIG. 2 is a diagram for illustrating a method according to an embodiment of the present invention; One of first reflected light (ie, sample light) and a second reflected light (reference light) in the apparatus for measuring the through-twist perforation; FIG. 3 is one of the embodiments according to the present invention Schematic for illustrating a digitally variable aperture in a device for measuring the through-twist perforation; FIG. 4 is a diagram illustrating a measurement in accordance with an embodiment of the present invention a light quantity controller in the device for through-twisting perforation; FIG. 5 is a diagram illustrating a calculation in a device for measuring the through-twist perforation according to an embodiment of the present invention A method of measuring the first reflected light reflected by the object; FIGS. 6 and 7 are diagrams illustrating the interference in the apparatus for measuring the through-twisted perforation according to an embodiment of the present invention Situation; and FIG. 8 is a diagram of a specific embodiment of the present invention for illustrating Apparatus for measuring the silicon through the perforations, measured through the silicon instance one perforation.
此後,將參考該等伴隨圖式敘述本發明之多數具體實施例,但本發明並不限制於此。在此敘述中,為了清楚的目的公眾所習知之功能或配置的細節則被省略。Hereinafter, most of the specific embodiments of the present invention will be described with reference to the accompanying drawings, but the invention is not limited thereto. In this description, details of functions or configurations that are known to the public for the sake of clarity are omitted.
第1圖為根據本發明一具體實施例之一圖式,顯示 用於量測直通矽晶穿孔(TSV)的設備;第2圖為根據本發明一具體實施例之一圖式,用於說明在用於量測該直通矽晶穿孔的設備中之一第一反射光(也就是試樣光)以及一第二反射光(參考光);第3圖為根據本發明一具體實施例之一圖式,用於說明在用於量測該直通矽晶穿孔的設備中之一數位可變光圈;第4圖為根據本發明一具體實施例之一圖式,用於說明在用於量測該直通矽晶穿孔的設備中之一光量控制器;第5圖為根據本發明一具體實施例之一圖式,用於說明在用於量測該直通矽晶穿孔的設備中,計算從一量測物件反射之該第一反射光的方法;第6圖與第7圖為根據本發明一具體實施例之圖式,用於說明在用於量測該直通矽晶穿孔的設備中的干涉情形;而第8圖為根據本發明一具體實施例之圖式,用於說明透過用於量測該直通矽晶穿孔的設備,量測該直通矽晶穿孔之一實例。1 is a diagram showing a display according to an embodiment of the present invention. Apparatus for measuring through-thin twinned vias (TSV); FIG. 2 is a diagram illustrating one of the first devices in the apparatus for measuring the through-twist perforation according to an embodiment of the present invention Reflected light (ie, sample light) and a second reflected light (reference light); FIG. 3 is a diagram illustrating a method for measuring the through-twisted perforation according to an embodiment of the present invention a digital variable aperture in the device; FIG. 4 is a diagram illustrating one of the light quantity controllers in the apparatus for measuring the through-twist perforation according to an embodiment of the present invention; A diagram for explaining a method of calculating the first reflected light reflected from a measuring object in an apparatus for measuring the through-twist perforation according to an embodiment of the present invention; FIG. 6 7 is a diagram for explaining an interference situation in an apparatus for measuring the through-twist perforation according to an embodiment of the present invention; and FIG. 8 is a diagram according to an embodiment of the present invention. For measuring the through-pass twin by means of a device for measuring the through-twisted perforation An example of a perforation.
參考第1圖,根據本發明一具體實施例用於量測該直通矽晶穿孔110的設備,可用於量測具有複數個量測物件100(例如,晶片)係為垂直堆疊的三維半導體封裝處理中,該直通矽晶穿孔110或類似穿孔孔洞是否根據需要而精確形成於該量測物件100之中,因此能電氣連接至該等量測物件100,而該設備包含一光源10、一數位可變光圈20、一分光器50與一偵測器90。Referring to FIG. 1, an apparatus for measuring the through-silicon via 110 in accordance with an embodiment of the present invention can be used to measure a three-dimensional semiconductor package processing having a plurality of measurement objects 100 (eg, wafers) vertically stacked. The through-silicone via 110 or similar perforated hole is accurately formed in the measuring object 100 as needed, and thus can be electrically connected to the measuring object 100, and the device includes a light source 10 and a digital position. The aperture 20, a beam splitter 50 and a detector 90 are provided.
該光源10可以根據需要與設計運用各種光源10。例如,可以使用放射白光的發光二極體(LED)作為該光源10。視需要也可使用鹵素燈泡或其他類似形式的白光光源作 為該光源10。The light source 10 can utilize various light sources 10 as needed and designed. For example, a light-emitting diode (LED) that emits white light can be used as the light source 10. Halogen bulbs or other similar forms of white light source can also be used as needed. It is the light source 10.
該數位可變光圈20係提供於從該光源10所放射之光的路徑上,並調整利用來自該光源10所放射之光所照明的區域。利用通過該數位可變光圈20之光所照明的區域可以根據該直通矽晶穿孔110的深寬比而改變。The digital variable aperture 20 is provided on a path of light emitted from the light source 10, and adjusts an area illuminated by light emitted from the light source 10. The area illuminated by the light passing through the digital variable aperture 20 may vary depending on the aspect ratio of the through-silicone via 110.
在此,可根據該直通矽晶穿孔110的深寬比而改變利用通過該數位可變光圈20之光所照明的區域,係可以利用通過根據該直通矽晶穿孔110的深寬比而調整之該數位可變光圈20的光的範圍(也就是,光圈尺寸)所察知。同樣的,在本發明此具體實施例中,該直通矽晶穿孔110的深寬比意指該直通矽晶穿孔110的深度對於該直通矽晶穿孔110之直徑的比例。根據該直通矽晶穿孔110的深寬比,可以計算進入該直通矽晶穿孔110之光線的入射角度。Here, the area illuminated by the light passing through the digital variable aperture 20 can be changed according to the aspect ratio of the through-silicone via 110, which can be adjusted by using the aspect ratio according to the through-twist hole 110. The range of the light of the digital variable aperture 20 (that is, the aperture size) is known. Similarly, in this embodiment of the invention, the aspect ratio of the through-silicon vias 110 means the ratio of the depth of the through-silicon vias 110 to the diameter of the through-silicon vias 110. According to the aspect ratio of the through-twisting via 110, the incident angle of the light entering the through-thinned via 110 can be calculated.
該數位可變光圈20可以具有各種結構,其中可在不進行實體移動下變化一光圈數值(也就是尺寸)。例如,該數位可變光圈20可以使用一液晶顯示器(LCD)提供,並根據該直通矽晶穿孔110的深寬比啟動在尺寸(直徑)中具有變化的光傳輸區域22(相應於該光圈尺寸)。The digital variable aperture 20 can have various configurations in which an aperture value (i.e., size) can be changed without physical movement. For example, the digital variable aperture 20 can be provided using a liquid crystal display (LCD) and activates a light transmission region 22 having a change in size (diameter) according to the aspect ratio of the through-twist perforation 110 (corresponding to the aperture size ).
因此,使用該液晶顯示器之該數位可變光圈20可以做為由啟動該光傳輸區域的方式獲得的光圈,該光傳輸區域的尺寸則由一電子訊號所變化,而無需根據一馬達或其他類似機制進行實體移動。參考第3圖,該數位可變光圈20可根據該直通矽晶穿孔110的深寬比變化而具有像是f/1.4、f/2、f/2.8、f/4等等的不同光圈數值(也就是,該光傳輸區域的直 徑)。Therefore, the digital variable aperture 20 using the liquid crystal display can be used as an aperture obtained by activating the optical transmission area, and the size of the optical transmission area is changed by an electronic signal without depending on a motor or the like. The mechanism moves entities. Referring to FIG. 3, the digital variable aperture 20 can have different aperture values such as f/1.4, f/2, f/2.8, f/4, etc. according to the aspect ratio change of the through-twist perforation 110. That is, the light transmission area is straight path).
同樣的,該數位可變光圈20可經變化以具有一非標準光圈數值以及該等前述的標準光圈數值。例如,該數位可變光圈20可經變化以具有像是f/1.6、f/2.1、f/4.4等等的非標準光圈數值。在現有的機械式光圈中,該光圈只能經變化為具備現有的光圈數值,而因此難以執行精確的控制,也難以具有各種深寬比相應的最佳光圈數值。另一方面,根據本發明一具體實施例,該數位可變光圈20係經變化而甚至具有該等非標準光圈數值,藉此具有與該等不同深寬比相應的最佳光圈數值。Similarly, the digital iris 20 can be varied to have a non-standard aperture value and the aforementioned standard aperture values. For example, the digital iris diaphragm 20 can be varied to have non-standard aperture values such as f/1.6, f/2.1, f/4.4, and the like. In the conventional mechanical aperture, the aperture can only be changed to have the existing aperture value, so that it is difficult to perform precise control, and it is difficult to have the optimum aperture value corresponding to various aspect ratios. In another aspect, in accordance with an embodiment of the present invention, the digital aperture diaphragm 20 is modified to have even such non-standard aperture values, thereby having an optimum aperture value corresponding to the different aspect ratios.
此外,在本發明此具體實施例中,該光圈的形狀(也就是,該光傳輸區域的形狀)為圓形,但不限制於此。替代的,該光傳輸區域可以具有一多邊形形狀,像是四邊形或其他的幾何形狀。Further, in this embodiment of the invention, the shape of the aperture (that is, the shape of the light transmission region) is circular, but is not limited thereto. Alternatively, the light transmitting region may have a polygonal shape such as a quadrangle or other geometric shape.
作為參考,從該光源10所放射的光可通過在該液晶顯示器中所啟動的光傳輸區域,但在除了該光傳輸區域22以外的液晶顯示器其他阻擋範圍中受到阻擋。在此,該受啟動的光傳輸區域22可意指為白光可直接通過的範圍,而非代表該液晶顯示器中的任何色彩,而該阻擋區域可意指為光線受阻檔的範圍,像是在該液晶顯示器中顯示為黑色的範圍,因此光並無法通過其中。For reference, light emitted from the light source 10 may pass through a light transmission region activated in the liquid crystal display, but is blocked in other barrier ranges of the liquid crystal display other than the light transmission region 22. Here, the activated light transmission region 22 may mean a range in which white light can pass directly, instead of representing any color in the liquid crystal display, and the blocking region may mean a range of light blocked files, such as The liquid crystal display is shown as a black range, so light does not pass through it.
參考第2圖,提供一分光器50,以將通過穿過該數位可變光圈20的入射光分裂並輸出成為兩光線,其於彼此垂直的一第一方向與一第二方向中移動。此外,從佈置於該第 一方向中一量測物件100所反射之第一反射光,與從佈置於該第二方向中一鏡體70所反射之第二反射光係經組合並輸出為組合光。Referring to Fig. 2, a beam splitter 50 is provided to split and output incident light passing through the digital variable aperture 20 into two rays which are moved in a first direction and a second direction which are perpendicular to each other. In addition, from the arrangement The first reflected light reflected by the measuring object 100 in one direction is combined with the second reflected light reflected from a mirror body 70 disposed in the second direction and output as combined light.
作為參考,根據本發明一具體實施例,於該數位可變光圈20與該分光器50之間提供一輔助分光器30,並將敘述利用朝向該量測物件100之方向中的該輔助分光器30改變通過穿過該數位可變光圈20的光的範例。For reference, an auxiliary beam splitter 30 is provided between the digital iris 20 and the beam splitter 50 according to an embodiment of the present invention, and the auxiliary beam splitter in the direction toward the measuring object 100 is used. 30 changes an example of light passing through the digital variable aperture 20.
該量測物件100係佈置於該第一方向中,而該鏡體70則佈置於該第二方向中。由該分光器50所分裂的輸出光可進入該量測物件100及該鏡體70,並接著再次朝向該分光器50反射。例如,根據本發明一具體實施例,該量測物件100係放置於該第一方向中,而該鏡體70則放置於該第二方向中,但並不限制於此。替代的,該鏡體可放置於該第一方向中,而該量測物件則放置於該第二方向中。The measurement object 100 is disposed in the first direction, and the mirror body 70 is disposed in the second direction. The output light split by the beam splitter 50 can enter the measurement object 100 and the mirror body 70 and then be reflected again toward the beam splitter 50. For example, according to an embodiment of the invention, the measuring object 100 is placed in the first direction, and the mirror body 70 is placed in the second direction, but is not limited thereto. Alternatively, the mirror body can be placed in the first direction and the measuring object is placed in the second direction.
同樣的,可在該數位可變光圈20與該分光器50之間以及該分光器50與一偵測器90(於稍候敘述)之間至少一位置處提供一光學系統。此外,該光學系統的數值光圈(NA)可根據該數位可變光圈20的尺寸(也就是,該光傳輸區域)適當調整。以下將敘述在該數位可變光圈20與該分光器50之間提供一第一光學系統40及在該分光器50與該偵測器90(於稍候敘述)之間提供一第二光學系統80的實例。Similarly, an optical system can be provided at least one position between the digital iris 20 and the beam splitter 50 and between the beam splitter 50 and a detector 90 (described later). Further, the numerical aperture (NA) of the optical system can be appropriately adjusted according to the size of the digital variable aperture 20 (that is, the optical transmission region). A first optical system 40 is provided between the digital iris 20 and the beam splitter 50, and a second optical system is provided between the beam splitter 50 and the detector 90 (described later). An example of 80.
該第一光學系統40與該第二光學系統80可利用組合多數一般光學元件的方式所配置,像是用於將入射光聚焦於一特定位置上的透鏡。然而,本發明並不受該光學系統的 結構與特徵所限制。The first optical system 40 and the second optical system 80 can be configured in a manner that combines a plurality of general optical components, such as lenses for focusing incident light at a particular location. However, the present invention is not subject to the optical system Structure and characteristics are limited.
同樣的,可以在光通過穿過該數位可變光圈20的路徑上提供一準直透鏡、一濾光器或各種類似光學元件,以維持及改變通過穿過該該數位可變光圈20之光的特徵。然而,本發明並不受該光學系統的與特徵所限制。Similarly, a collimating lens, a filter or various similar optical elements may be provided on the path of light passing through the digital variable aperture 20 to maintain and change the light passing through the digital variable aperture 20 Characteristics. However, the invention is not limited by the features and characteristics of the optical system.
該偵測器90係經提供以根據來自該分光器50所引導的組合光量測該直通矽晶穿孔110。可以使用典型的電荷耦合元件(CCD)相機作為該偵測器90,而根據需要與設計也可以使用其他的偵測裝置。The detector 90 is provided to measure the through-twist hole 110 in accordance with the combined light directed from the beam splitter 50. A typical charge coupled device (CCD) camera can be used as the detector 90, and other detection devices can be used as needed and designed.
該偵測器90接收來自該鏡體70與該量測物件100所反射,並由該分光器50所組合的組合光,因此可以形成一干涉訊號。從該偵測器90取得之該干涉訊號可由一預定的分析器進行分析,因此可根據該干涉訊號量測該直通矽晶穿孔110。The detector 90 receives the combined light reflected from the mirror body 70 and the measuring object 100 and combined by the beam splitter 50, so that an interference signal can be formed. The interference signal obtained from the detector 90 can be analyzed by a predetermined analyzer, so that the through-silicone via 110 can be measured based on the interference signal.
同樣的,根據本發明一具體實施例用於量測該直通矽晶穿孔110的設備可以進一步包含一光量控制器60,該光量控制器60則提供於由該分光器50所分裂並進入該鏡體70之入射光的路徑上,並選擇性控制進入該鏡體70的光量。Similarly, the apparatus for measuring the through-silicon via 110 in accordance with an embodiment of the present invention may further include a light amount controller 60 that is provided by the splitter 50 and enters the mirror. The path of the incident light of the body 70 selectively controls the amount of light entering the mirror body 70.
為了根據從該量測物件100所反射之該第一反射光(也就是,試樣光)以及從該鏡體70所反射之該第二反射光(也就是,參考光)而建立一理想的干涉訊號,必須將該第一反射光與該第二反射光維持為具有彼此近似程度的光量。該光量控制器60將該第一反射光與該第二反射光維持為具有彼此近似程度的光量,藉此使其能夠產生一適宜的干涉訊號。In order to establish an ideal according to the first reflected light (ie, sample light) reflected from the measuring object 100 and the second reflected light (ie, reference light) reflected from the mirror body 70. The interference signal must maintain the first reflected light and the second reflected light to have a similar amount of light to each other. The light amount controller 60 maintains the first reflected light and the second reflected light to have a similar amount of light to each other, thereby enabling a suitable interference signal to be generated.
也就是說,參考第6圖,從該量測物件所反射之該第一反射光(也就是,試樣光)相較於該第二反射光(也就是,該參考光)而言具有較低的反射度。因此,該第一反射光的光量明顯小於該第二反射光的光量。如果該第一反射光的光量顯著小於該第二反射光的光量時(也就是,該第一反射光小於該第二反射光),便難以辨別在該第一反射光與該第二反射光之間的建設性干涉及相消性干涉訊號。That is, referring to FIG. 6, the first reflected light (that is, the sample light) reflected from the measured object has a comparison with the second reflected light (that is, the reference light). Low reflectivity. Therefore, the amount of light of the first reflected light is significantly smaller than the amount of light of the second reflected light. If the amount of light of the first reflected light is significantly smaller than the amount of light of the second reflected light (that is, the first reflected light is smaller than the second reflected light), it is difficult to distinguish between the first reflected light and the second reflected light. The constructive work between them involves destructive interference signals.
另一方面,如第7圖所示,如果該第一反射光(也就是,試樣光)的光量係保持為具有與該第二反射光(也就是,該參考光)光量的相似程度,便可以明確辨別在該第一反射光與該第二反射光之間的建設性干涉及相消性干涉訊號。On the other hand, as shown in FIG. 7, if the amount of light of the first reflected light (that is, the sample light) is maintained to have a similarity with the amount of light of the second reflected light (that is, the reference light), It can be clearly discerned that the constructive interference between the first reflected light and the second reflected light involves a destructive interference signal.
因此,該光量控制器60將該第一反射光與該第二反射光維持為具有彼此近似程度的光量,藉此產生一適宜的干涉訊號。較佳的是,該光量控制器60可以根據該直通矽晶穿孔110的前述深寬比,調整進入該鏡體70的光量。Therefore, the light amount controller 60 maintains the first reflected light and the second reflected light to have a similar amount of light to each other, thereby generating a suitable interference signal. Preferably, the light quantity controller 60 can adjust the amount of light entering the mirror body 70 according to the aforementioned aspect ratio of the through-silicone via 110.
也就是說,可根據該直通矽晶穿孔110的深寬比改變前述光傳輸區域22的直徑(也就是,光圈數值)。因為該第一反射光的光量係與該光傳輸區域22的直徑尺寸呈比例變化,因此較佳的是該光量控制器60可以根據該直通矽晶穿孔110的深寬比,控制進入該鏡體70的光量。參考第4圖,該光量控制器60可以根據該直通矽晶穿孔110的深寬比,以一預定比例(例如,100:80、100:60及100:40)減少進入該鏡體70(也就是,由該分光器所分裂並進入該鏡體的光)的光 量。That is, the diameter (i.e., the aperture value) of the aforementioned light-transmitting region 22 can be changed according to the aspect ratio of the through-twisted through hole 110. Because the amount of light of the first reflected light varies in proportion to the diameter of the light transmitting region 22, it is preferable that the light amount controller 60 can control the entrance into the mirror according to the aspect ratio of the through-twisting through hole 110. The amount of light of 70. Referring to FIG. 4, the light quantity controller 60 can reduce the entering the mirror body 70 at a predetermined ratio (for example, 100:80, 100:60, and 100:40) according to the aspect ratio of the through-twisting through hole 110 (also That is, the light split by the spectroscope and entering the light of the mirror body) the amount.
如以上敘述,該光量控制器60根據該直通矽晶穿孔110的深寬比調整進入該鏡體70的光量,其中可由下述方程式[1]計算從該量測物件100所反射之該第一反射光
此外,該光量控制器60可將進入該鏡體70的光量控制為具有大於如以上計算該第一反射光之光量的0.5至2倍。Further, the light amount controller 60 can control the amount of light entering the mirror body 70 to have 0.5 to 2 times larger than the amount of light for calculating the first reflected light as above.
作為參考,通過該第一物件透鏡(第一光學系統)所傳輸的光量、該試樣(也就是,該量測物件)的反射率以及進入該物件透鏡(也就是,該第一光學系統)之光量可由第5圖所示之表示式計算。For reference, the amount of light transmitted by the first object lens (first optical system), the reflectivity of the sample (ie, the measuring object), and entering the object lens (ie, the first optical system) The amount of light can be calculated by the expression shown in Fig. 5.
在本發明此具體實施例中,只有在從該分光器輸出的光通過穿過該光量控制器時,減少該光量,但並不限制於此。替代的是,首先可以在從該分光器輸出的光通過穿過該光量控制器時控制該光量,並接著當光從該鏡體反射並再次通過穿過該光量控制器時進行輔助控制。In this embodiment of the invention, the amount of light is reduced only when light output from the beam splitter passes through the light amount controller, but is not limited thereto. Alternatively, the amount of light can be first controlled when the light output from the beam splitter passes through the light amount controller, and then assisted when light is reflected from the mirror body and passed again through the light amount controller.
該光量控制器60可以運用各種光量調整器,只要該等光量調整器能夠控制進入該鏡體70的光量。該光量控制器60的種類與特徵並不限制於此具體實施例中。例如,可透過一液晶顯示器(LCD)提供該光量調整器60。在此情況中,使用液晶顯示器之該光量調整器60可以藉由調整對該液晶顯 示器施加之電壓的方式,或關閉某些像素的方式,控制通過穿過該光量調整器60的光量。視需要也可以使用其他方法控制通過穿過該液晶顯示器的光量。替代的,可以函數濾波器(例如,常態(ND)分配濾波器)或具有減少光量之能力的類似方法,以構築該光量調整器60,並可以使用多數其他光學元件以以構築該光量調整器60。The light quantity controller 60 can utilize various light quantity adjusters as long as the light quantity adjusters can control the amount of light entering the mirror body 70. The type and characteristics of the light amount controller 60 are not limited to this particular embodiment. For example, the light quantity adjuster 60 can be provided through a liquid crystal display (LCD). In this case, the light quantity adjuster 60 using the liquid crystal display can be adjusted by the liquid crystal display The amount of light passing through the light amount adjuster 60 is controlled by the manner in which the voltage applied by the indicator, or the manner in which certain pixels are turned off. Other methods of controlling the amount of light passing through the liquid crystal display can also be used as needed. Alternatively, a function filter (for example, a normal (ND) distribution filter) or a similar method having the ability to reduce the amount of light can be used to construct the light quantity adjuster 60, and most other optical elements can be used to construct the light quantity adjuster. 60.
同時,根據本發明一具體實施例,量測該直通矽晶穿孔110,也就是量測形成於該量測物件100中之該直通矽晶穿孔110的方法可以包含下述步驟,從該光源10放射光;使用一數位可變光圈20,根據該直通矽晶穿孔110的深寬比調整利用來自該光源10所放射之光所照明的區域;將通過穿過該數位可變光圈20的光分離成為兩光線,其分別在相互垂直的一第一方向與一第二方向中移動,並藉由將從佈置於該第一方向中該量測物件100所反射的第一反射光與從佈置於該第二方向中之該鏡體70所反射的第二反射光進行組合的方式,輸出該組合光;以及根據該組合光量測該直通矽晶穿孔110。在此,該數位可變光圈20可作為一種孔徑,其孔徑尺寸可根據該直通矽晶穿孔110的深寬比而選擇性改變,而無需進行實體移動。Meanwhile, according to an embodiment of the present invention, the method of measuring the through-twisting through-hole 110, that is, measuring the through-twisted through-hole 110 formed in the measuring object 100, may include the following steps from the light source 10 Radiating light; using a digitally variable aperture 20, adjusting the area illuminated by the light emitted from the source 10 according to the aspect ratio of the through-pass perforation 110; separating the light passing through the digital aperture 20 Forming two rays that are respectively moved in a first direction and a second direction that are perpendicular to each other, and are arranged from the first reflected light reflected from the measuring object 100 disposed in the first direction The second reflected light reflected by the mirror body 70 in the second direction is combined to output the combined light; and the through-twisted through hole 110 is measured according to the combined light quantity. Here, the digital variable aperture 20 can be used as an aperture whose aperture size can be selectively changed according to the aspect ratio of the through-twisted via 110 without physical movement.
首先,如果該光源10放射光,該數位可變光圈20根據該直通矽晶穿孔110的深寬比調整利用來自該光源10所放射之光所照明的區域。如以上敘述,該數位可變光圈20實作該孔徑的功能,因此該孔徑尺寸便根據該直通矽晶穿孔110的深寬比變化,而無需進行實體移動。First, if the light source 10 emits light, the digital variable aperture 20 adjusts the area illuminated by the light emitted from the light source 10 in accordance with the aspect ratio of the through-twist perforation 110. As described above, the digital iris diaphragm 20 functions as the aperture, so that the aperture size changes according to the aspect ratio of the through-twist hole 110 without physical movement.
接著,利用該分光器50將通過穿過該數位可變光圈20的光分裂為兩光線,其在相互垂直之該第一方向與該第二方向中移動,並於該分光器50中將從佈置於該第一方向中該量測物件100所反射的第一反射光與從佈置於該第二方向中之該鏡體70所反射的第二反射光進行再次組合,並輸出為該組合光。Then, the light passing through the digital variable aperture 20 is split into two rays by the beam splitter 50, which are moved in the first direction and the second direction perpendicular to each other, and will be in the beam splitter 50. The first reflected light reflected by the measuring object 100 disposed in the first direction and the second reflected light reflected by the mirror body 70 disposed in the second direction are combined again and output as the combined light .
接著,該偵測器90根據從該分光器50所輸出之該組合光量測該直通矽晶穿孔110。Then, the detector 90 measures the through-silicon via 110 according to the combined light output from the beam splitter 50.
同時,根據一示例具體實施例,可以連續量測該量測物件100之表面與該直通矽晶穿孔110。Meanwhile, according to an exemplary embodiment, the surface of the measuring object 100 and the through-twisting through-hole 110 may be continuously measured.
參考第8圖,當量測該量測物件100之該表面參考高度時,可將該數位可變光圈20設定於一第一設定條件S1,而當量測該直通矽晶穿孔110時,可將該數位可變光圈20設定於一第二設定條件S2。例如,在該第一設定條件S1下,可將該數位可變光圈20的完整區域設定為該光傳輸區域22,而不具備任何阻擋區域。另一方面,在該第二設定條件S2下,可以根據一特定直通矽晶穿孔110的深寬比於該數位可變光圈20中設定該光傳輸區域22的尺寸。Referring to FIG. 8 , when the surface reference height of the measuring object 100 is equivalently measured, the digital variable aperture 20 can be set to a first setting condition S1, and when the through-twisting through hole 110 is equivalently measured, The digital variable aperture 20 is set to a second setting condition S2. For example, under the first setting condition S1, the complete area of the digital variable aperture 20 can be set as the light transmission area 22 without any blocking area. On the other hand, under the second setting condition S2, the size of the light transmission region 22 can be set in the digital variable aperture 20 according to the aspect ratio of a specific through-twisting via 110.
此外,在將該入射光聚焦於該直通矽晶穿孔110底部上(也就是,該首次掃瞄該直通矽晶穿孔110時),以量測該直通矽晶穿孔110之前,可預先設定該數位可變光圈20為具有與該直通矽晶穿孔110相應之一孔徑特徵(也就是,該光傳輸區域22的尺寸),其因此能夠連續量測該直通矽晶穿孔110,而無需用於改變該數位可變光圈20設定的任何分離 的準備時間。如果該直通矽晶穿孔110具有100微米的深度,而進入該直通矽晶穿孔110內部之入射光的焦距到達大約20微米~60微米的深度時,可以預先設定該數位可變光圈20為具有相應於該該直通矽晶穿孔110深寬比之一孔徑特徵。In addition, the focus can be preset before the incident light is focused on the bottom of the through-silicon via 110 (that is, when the through-silicon via 110 is first scanned) to measure the through-silicon via 110. The variable aperture 20 has an aperture characteristic corresponding to the through-twisted through hole 110 (that is, the size of the light transmission region 22), which is capable of continuously measuring the through-twist perforation 110 without changing the Any separation of the digital iris 20 setting Preparation time. If the through-silicone via 110 has a depth of 100 micrometers, and the focal length of the incident light entering the through-the-crystal via 110 reaches a depth of about 20 micrometers to 60 micrometers, the digital aperture 20 can be preset to have a corresponding The pass-through perforation 110 has an aspect ratio characteristic of one aperture.
根據本發明一具體實施例,用於量測直通矽晶穿孔之一設備與方法可以精確量測該直通矽晶穿孔(也就是,該穿孔孔洞)的形成狀態。According to an embodiment of the invention, an apparatus and method for measuring a through-twist perforation can accurately measure the formation state of the through-twist perforation (that is, the perforation hole).
實際上,根據本發明一具體實施例,使用一數位可變光圈,藉此更快且更精確的量測該直通矽晶穿孔的形成狀態。In fact, in accordance with an embodiment of the present invention, a digitally variable aperture is used whereby the formation state of the through-twist perforations is measured more quickly and more accurately.
同樣的,根據本發明一具體實施例,有足夠的光線可以到達該直通矽晶穿孔的內部底部,而其因此可能避免因為該直通矽晶穿孔內側光量不足所引起的無法量測情況,並能執行更有效率且精確的量測。Similarly, according to an embodiment of the present invention, sufficient light can reach the inner bottom of the through-twisting perforation, and thus it is possible to avoid the unmeasurable condition caused by the insufficient amount of light inside the through-twisted perforation, and Perform more efficient and accurate measurements.
此外,根據本發明一具體實施例,使用該數位可變光圈,因此可以根據需求自由調整該孔徑尺寸,而不受到該孔徑尺寸限制。Moreover, in accordance with an embodiment of the present invention, the digital variable aperture is used so that the aperture size can be freely adjusted as desired without being limited by the aperture size.
同樣的,根據本發明一具體實施例,使用該數位可變光圈取代運用一馬達或其他類似機制的類比光圈,因此可以簡化該結構,並可以更快且更容易的調整該孔徑的尺寸。Similarly, in accordance with an embodiment of the present invention, the digital iris diaphragm is used in place of an analog aperture using a motor or other similar mechanism, thereby simplifying the structure and allowing the aperture size to be adjusted more quickly and easily.
此外,根據本發明一具體實施例,不需要根據該直通矽晶穿孔的深寬比對該光圈進行實體改變,藉此具有一改良的量測方便性以及縮短量測需要的時間。Moreover, in accordance with an embodiment of the present invention, there is no need to physically change the aperture according to the aspect ratio of the through-twist perforation, thereby providing an improved measurement convenience and a shorter time required for measurement.
雖然已經顯示及敘述本發明一些示例具體實施例, 但該領域技術人員將可理解在不背離本發明支援則與精神下可以在這些具體實施例中進行多種改變,本發明之構想則定義於該等附加申請專利範圍與其等價物之中。Although some example embodiments of the invention have been shown and described, However, it will be understood by those skilled in the art that various modifications may be made in the specific embodiments without departing from the scope of the invention.
10‧‧‧光源10‧‧‧Light source
20‧‧‧數位可變光圈20‧‧‧Digital iris
30‧‧‧輔助分光器30‧‧‧Auxiliary splitter
40‧‧‧第一光學系統40‧‧‧First optical system
50‧‧‧分光器50‧‧ ‧ splitter
60‧‧‧光量控制器60‧‧‧Light quantity controller
70‧‧‧鏡體70‧‧‧Mirror body
80‧‧‧第二光學系統80‧‧‧Second optical system
90‧‧‧偵測器90‧‧‧Detector
100‧‧‧量測物件100‧‧‧Measurement objects
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| KR101551609B1 (en) | 2015-06-10 | 2015-09-08 | 한국기초과학지원연구원 | A thermal characteristic apparatus for wafer device and a control method thereof |
| JP6685849B2 (en) * | 2016-06-17 | 2020-04-22 | 株式会社ミツトヨ | Optical interference measuring device and optical interference measuring method |
| CN109540004B (en) * | 2018-11-29 | 2020-06-30 | 中国科学院微电子研究所 | Optical detection system and detection method thereof |
| KR102346827B1 (en) * | 2021-05-31 | 2022-01-05 | 주식회사 에이케이씨 | Color optical inspection device and system comprising the same |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US5450201A (en) * | 1993-02-12 | 1995-09-12 | Orbotech Ltd. | Apparatus and method for optical inspection of articles |
| TW201232686A (en) * | 2011-01-31 | 2012-08-01 | Ind Tech Res Inst | System, method and computer readable medium for through silicon via structure measurement |
| KR101186464B1 (en) * | 2011-04-13 | 2012-09-27 | 에스엔유 프리시젼 주식회사 | Interferometric system for measuring tsv and method using the same |
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| KR101245097B1 (en) * | 2011-07-25 | 2013-03-25 | 에스엔유 프리시젼 주식회사 | Device for measuring thickness of thin film |
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| US5450201A (en) * | 1993-02-12 | 1995-09-12 | Orbotech Ltd. | Apparatus and method for optical inspection of articles |
| TW201232686A (en) * | 2011-01-31 | 2012-08-01 | Ind Tech Res Inst | System, method and computer readable medium for through silicon via structure measurement |
| KR101186464B1 (en) * | 2011-04-13 | 2012-09-27 | 에스엔유 프리시젼 주식회사 | Interferometric system for measuring tsv and method using the same |
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