TWI480935B - Techniques for glass attachment in an image sensor package - Google Patents
Techniques for glass attachment in an image sensor package Download PDFInfo
- Publication number
- TWI480935B TWI480935B TW098144464A TW98144464A TWI480935B TW I480935 B TWI480935 B TW I480935B TW 098144464 A TW098144464 A TW 098144464A TW 98144464 A TW98144464 A TW 98144464A TW I480935 B TWI480935 B TW I480935B
- Authority
- TW
- Taiwan
- Prior art keywords
- glass
- adhesive
- wafer
- singulated
- pattern
- Prior art date
Links
- 239000011521 glass Substances 0.000 title claims description 306
- 238000000034 method Methods 0.000 title claims description 87
- 239000000853 adhesive Substances 0.000 claims description 88
- 230000001070 adhesive effect Effects 0.000 claims description 88
- 230000003287 optical effect Effects 0.000 claims description 34
- 238000010276 construction Methods 0.000 claims description 33
- 238000004806 packaging method and process Methods 0.000 claims description 12
- 239000002245 particle Substances 0.000 claims description 11
- 239000013078 crystal Substances 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 8
- 239000011159 matrix material Substances 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 5
- 239000008187 granular material Substances 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 238000004026 adhesive bonding Methods 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 238000011109 contamination Methods 0.000 description 7
- 238000000227 grinding Methods 0.000 description 7
- 229910052715 tantalum Inorganic materials 0.000 description 7
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 7
- 239000004593 Epoxy Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 239000006059 cover glass Substances 0.000 description 2
- 230000000593 degrading effect Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 208000033999 Device damage Diseases 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- DHXVGJBLRPWPCS-UHFFFAOYSA-N Tetrahydropyran Chemical compound C1CCOCC1 DHXVGJBLRPWPCS-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000002313 adhesive film Substances 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000006071 cream Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/162—Disposition
- H01L2924/16235—Connecting to a semiconductor or solid-state bodies, i.e. cap-to-chip
Landscapes
- Solid State Image Pick-Up Elements (AREA)
Description
本申請案宣告2008年6月9日申請,標題為「用於影像感測器之晶粒上玻璃(Glass-On-Die)的黏著方法」之美國專利申請案12/136,033號的部分接續申請案之優先權,其依序宣告2007年6月8日申請,標題為「用於影像感測器之晶粒上玻璃的黏著方法」之美國專利臨時申請案60/942,953號的優先權,上述各個專利案之內容係以參考方式併入本文中。A continuation application of U.S. Patent Application Serial No. 12/136,033, entitled "Glass-On-Die Adhesion Method for Image Sensors", filed on June 9, 2008. Priority of the case, which is hereby incorporated by reference in its entirety in its entirety, the entire disclosure of the entire disclosure of the entire disclosure of the entire disclosure of the entire disclosure of The contents of each patent application are incorporated herein by reference.
本發明一般係有關於用以在切割之前將玻璃黏著到一晶圓基板的晶圓級封裝(WLP)方法,且更特別係在於一種封裝一互補金屬氧化物半導體(CMOS)或電荷耦合裝置(CCD)類型影像感測器之低成本方法,藉以使該感測器免於微粒污染以及組裝期間的應力損壞。The present invention generally relates to a wafer level package (WLP) method for bonding glass to a wafer substrate prior to dicing, and more particularly to packaging a complementary metal oxide semiconductor (CMOS) or charge coupled device ( A low cost method of CCD) type image sensor to protect the sensor from particulate contamination and stress damage during assembly.
在微電子光學模組之組裝期間產生微鏡頭或影像感測器的微粒污染可能使該模組故障。微粒對於相機模組組裝程序期間的產量損失重要性多達百分之90。裝置解析度越高,由於微粒造成的產量損失隨著像素尺寸越小而增加。例如,在一3百萬畫素感測器中,其像素尺寸係小於2微米。如果一微粒能夠阻擋超過一個像素而不會使影像品質降低,則在此應用例中之容許微粒尺寸係限制在直徑2微米。為了限制此尺寸之微粒數量,在相機模組組裝程序期間需 要嚴格的微粒控制量測,以避免產量損失。這些微粒污染量測會增加組裝操作的成本。Particle contamination of the microlens or image sensor during assembly of the microelectronic optical module may cause the module to malfunction. The particles are as important as 90 percent of the yield loss during the camera module assembly process. The higher the resolution of the device, the more the yield loss due to the particles increases as the pixel size is smaller. For example, in a 3 million pixel sensor, the pixel size is less than 2 microns. If a particle can block more than one pixel without degrading image quality, the allowable particle size in this application is limited to 2 microns in diameter. In order to limit the number of particles of this size, it is required during the camera module assembly process. Strict particle control measurements are required to avoid yield loss. These particulate contamination measurements increase the cost of assembly operations.
WLP方法有助於解決現有晶片直接封裝(COB)技術法的污染問題。此生產改良係藉著在晶圓切割以及安置裝置之前使用一玻璃層,保護感測器之主動區域免於遭受污染所達成。由於落在玻璃/鏡片之頂表面上的微粒會與感測器隔開玻璃層之厚度(典型為0.3到0.4毫米),故最大的容許微粒尺寸能夠達到直徑25微米,而不會降低影像品質。此外,任何由於玻璃表面之微粒污染而無法運作之單元能夠輕易地藉著重做而恢復。從而能夠使用一晶圓級封裝方法顯著地提升相機模組組裝程序之產量。The WLP method helps solve the contamination problem of the existing wafer direct packaging (COB) technology. This production improvement is achieved by protecting the active area of the sensor from contamination by using a glass layer prior to wafer cutting and placement. Since the particles falling on the top surface of the glass/lens are separated from the sensor by the thickness of the glass layer (typically 0.3 to 0.4 mm), the maximum allowable particle size can reach 25 microns in diameter without degrading image quality. . In addition, any unit that is inoperable due to particulate contamination of the glass surface can easily be recovered by focusing on it. This enables a wafer-level packaging approach to significantly increase the throughput of the camera module assembly process.
目前所使用的一種WLP方法(例如,Tessera公司之Shellcase CF)將一晶圓尺寸玻璃板結合在晶圓之感測器側位置的腔室壁之頂部,從而在各個感測器上方產生一光學腔室。此步驟之後接著進行玻璃切割與晶背研磨。最後,將晶圓切割成為個別的裝置。儘管此方法顯示出在產量方面優於COB方法,其可能在矽氧烷之周圍內側上產生高應力,如此可能會發生產量損失。One of the currently used WLP methods (eg, Tressera's Shellcase CF) combines a wafer-sized glass plate on top of the chamber wall at the sensor side of the wafer to create an optical image above each sensor. Chamber. This step is followed by glass cutting and crystal back grinding. Finally, the wafer is cut into individual devices. Although this method shows superior to the COB method in terms of yield, it may generate high stress on the inner side of the siloxane, so that yield loss may occur.
其他WLP方法(例如,Schott公司之OPTO-WLP)同樣顯示出在生產管理方面的優點。此方法之第一步驟係為藉著一玻璃蓋保護敏感的主動元件構造。一特定之黏著晶圓結合方法使得結合層中能夠進行選擇性的黏著劑覆蓋。在接下來的步驟中,經過結合之矽氧烷-玻璃夾心構造係由矽氧烷側(背側)使其變薄。後續步驟有關於將通孔蝕刻進入矽氧 烷側,以便使結合襯墊連通到晶圓背部,重新分配連接到晶圓背側以及球形附裝之接點。該方法因而需要形成通孔/通道,多重層之導線/絕緣材料以及許多方法步驟非常倚重手動的反覆試驗方法。結果,使用此方法時,前導作業時間非常長,且可能會產生方法不穩定性。Other WLP methods (eg, SCHOTT OPTO-WLP) also show advantages in production management. The first step in this method is to protect the sensitive active component construction by means of a glass cover. A specific adhesive wafer bonding method enables selective adhesive coverage in the bonding layer. In the next step, the combined decane-glass sandwich structure is thinned by the oxane side (back side). The next step is about etching the via into the helium The alkane side is such that the bond pads communicate to the back of the wafer, redistributing the connections to the back side of the wafer and the ball-attached contacts. The method thus requires the formation of vias/channels, multiple layers of wires/insulation materials, and many method steps that rely heavily on manual repetitive testing methods. As a result, when using this method, the lead time is very long and method instability may occur.
發展本發明係用以消除本段發明背景所述的問題。The present invention has been developed to eliminate the problems described in the background of the invention.
結合其他系統、工具以及方法加以描述與顯示之下列實施例及其樣態旨在做為示範性質,且展示方式並不限定範疇。在各種實施例中,會減緩或消除一種或更多種上述問題,而其他實施例之目的則在於其他改良方案。The following embodiments, which are described and illustrated in conjunction with other systems, tools, and methods, are intended to be exemplary in nature and are not limited in scope. In various embodiments, one or more of the above problems may be alleviated or eliminated, while other embodiments are directed to other improvements.
一種用於半導體影像感測器裝置之晶圓級封裝方法包括將一晶圓尺寸玻璃板暫時地安置在一玻璃晶圓夾具上;切割該玻璃板,以產生經切割之玻璃晶粒,其大體上係對應具有多個製造完成的光學影像感測器之經處理晶圓上的一圖案;將腔室壁附裝到玻璃;使玻璃晶圓夾具對齊該經處理晶圓,以致於使具有腔室壁之經切割玻璃晶粒大體上對齊位於該經處理晶圓上的影像感測器之圖案;以一黏著劑將經切割玻璃晶粒之腔室壁結合到光學影像感測器,以產生具有一內部腔室之感應器-腔室壁-玻璃夾心構造;以及自玻璃晶圓夾具鬆開該經切割玻璃晶粒。A wafer level packaging method for a semiconductor image sensor device includes temporarily placing a wafer size glass plate on a glass wafer fixture; cutting the glass plate to produce a cut glass die, generally The upper system corresponds to a pattern on the processed wafer having a plurality of fabricated optical image sensors; attaching the chamber wall to the glass; aligning the glass wafer fixture with the processed wafer such that the cavity is provided The cut glass rim of the chamber wall is substantially aligned with the image sensor on the treated wafer; the chamber wall of the cut glass dies is bonded to the optical image sensor with an adhesive to produce An inductor-chamber wall-glass sandwich construction having an internal chamber; and loosening the cut glass die from the glass wafer fixture.
將玻璃晶圓暫時地安置到玻璃晶圓夾具能夠藉著分配一可固化黏著劑之圖案,其大體上對應到位於裝置晶圓上 的影像感測器圖案加以完成。結合步驟能夠包括施加黏著劑到經切割的玻璃晶粒,該結合步驟能夠包括施加黏著劑到影像感測器表面。該黏著劑可為一UV可固化光學黏著劑。結合步驟能夠包括使該裝置-腔室壁-玻璃夾心構造暴露於UV光線,以便使黏著劑固化。結合步驟能夠包括設定影像感測器與玻璃蓋體之間的距離。Temporarily placing a glass wafer onto a glass wafer fixture can be by dispensing a pattern of curable adhesive that substantially corresponds to the device wafer The image sensor pattern is done. The bonding step can include applying an adhesive to the cut glass dies, and the bonding step can include applying an adhesive to the image sensor surface. The adhesive can be a UV curable optical adhesive. The bonding step can include exposing the device-chamber wall-glass sandwich construction to UV light to cure the adhesive. The bonding step can include setting a distance between the image sensor and the cover glass.
感測器-腔室壁-玻璃夾心構造能夠在從玻璃晶圓夾具鬆開該構造以前切成晶粒,以產生個別的裝置。該感測器-腔室壁-玻璃夾心構造亦能夠在從玻璃晶圓夾具鬆開該構造以後切成晶粒,以產生個別的裝置。切割玻璃板之步驟包括額外的步驟,該步驟沿著玻璃之厚度尺寸設置一推拔。鬆開經切割玻璃晶粒之步驟包括將玻璃晶粒固持到玻璃晶圓夾具的黏著劑暴露於UV光線。腔室壁能夠在進行切割以前附裝到玻璃板,腔室壁亦能夠在進行切割以後附裝到玻璃板。該玻璃晶圓夾具能包括一金屬框架載體,其上支撐具有黏著劑之一薄膜。The sensor-chamber wall-glass sandwich configuration can be cut into dies prior to loosening the configuration from the glass wafer fixture to create individual devices. The sensor-chamber wall-glass sandwich construction can also be cut into dies after the structure is released from the glass wafer fixture to create individual devices. The step of cutting the glass sheet includes an additional step of setting a push along the thickness dimension of the glass. The step of loosening the cut glass dies includes exposing the glass dies to the glass wafer fixture by exposure to UV light. The chamber wall can be attached to the glass sheet prior to cutting, and the chamber wall can also be attached to the glass sheet after cutting. The glass wafer holder can include a metal frame carrier on which a film having one of the adhesives is supported.
一種用於半導體影像感測器裝置之晶圓級封裝方法包括將一晶圓尺寸玻璃板暫時地安置在一玻璃晶圓夾具上;切割玻璃板以產生經切割的玻璃晶粒,其大體上係對應具有多個製造完成之光學影像感測器之經過處理晶圓上的一圖案;將腔室壁附裝到該經處理的晶圓;將玻璃晶圓夾具對齊該經處理之晶圓,以致於使經切割玻璃晶粒大體上對齊位於具有腔室壁之經處理晶圓上的影像感測器圖案;以一黏著劑將經切割玻璃晶粒結合到與光學影像感測器相關 之腔室壁,以便產生具有一內部腔室之感測器-腔室壁-玻璃夾心構造;以及自該玻璃晶圓夾具鬆開該經切割玻璃晶粒。A wafer level packaging method for a semiconductor image sensor device includes temporarily placing a wafer size glass plate on a glass wafer fixture; cutting the glass plate to produce a cut glass die, which is generally Corresponding to a pattern on a processed wafer having a plurality of fabricated optical image sensors; attaching a chamber wall to the processed wafer; aligning the glass wafer fixture with the processed wafer such that The image sensor pattern is disposed on the processed wafer having the chamber wall substantially aligned with the cut glass dies; the cut glass dies are bonded to the optical image sensor with an adhesive a chamber wall to create a sensor-chamber wall-glass sandwich configuration having an internal chamber; and releasing the cut glass die from the glass wafer holder.
一種用於半導體影像感測器裝置之晶圓級封裝方法包括將一晶圓尺寸玻璃板暫時地安置在一玻璃晶圓夾具上;切割玻璃板以產生經切割的玻璃晶粒,其大體上係對應具有多個製造完成之光學影像感測器的經過處理晶圓上之一圖案;使該玻璃晶圓夾具對齊經處理晶圓,以致於使經切割玻璃晶粒大體上係對齊位於經處理晶圓上之影像感測器的圖案;以一黏著劑將經切割玻璃晶粒結合到光學影像感測器,以產生一感測器-黏著劑-玻璃夾心構造;以及自玻璃晶圓夾具鬆開該經切割玻璃晶粒。A wafer level packaging method for a semiconductor image sensor device includes temporarily placing a wafer size glass plate on a glass wafer fixture; cutting the glass plate to produce a cut glass die, which is generally Corresponding to a pattern on a processed wafer having a plurality of fabricated optical image sensors; aligning the glass wafer fixture with the processed wafer such that the cut glass grains are substantially aligned in the processed crystal a pattern of image sensors on a circle; bonding the cut glass dies to an optical image sensor with an adhesive to create a sensor-adhesive-glass sandwich construction; and releasing from the glass wafer holder The cut glass grain.
將玻璃晶圓暫時地安置到玻璃晶圓夾具能夠藉著分配一可固化黏著劑之圖案加以完成,該黏著劑圖案大體上對應位於裝置晶圓上的影像感測器圖案。該結合步驟能夠包括將黏著劑施加到影像感測器表面。該黏著劑能夠為一UV可固化光學黏著劑。該結合步驟能夠包括使該裝置-黏著劑-玻璃夾心構造暴露於UV光線,以便使黏著劑固化。結合程序能夠包括設定影像感測器與玻璃蓋體之間的距離。該感測器-黏著劑-玻璃夾心構造能夠在從玻璃晶圓夾具鬆開該構造之前切成晶粒,以便產生個別的裝置。該感測器-黏著劑-玻璃夾心構造能夠在從玻璃晶圓夾具鬆開該構造之後切成晶粒,以便產生個別的裝置。切割玻璃板之步驟能夠包括額外的步驟,該步驟沿著玻璃之厚度尺寸設置一推拔。鬆開經切割玻璃晶粒之步驟能夠包括將玻璃晶粒固持 到玻璃晶圓夾具的黏著劑暴露於UV光線。Temporarily placing the glass wafer onto the glass wafer fixture can be accomplished by dispensing a pattern of curable adhesive that substantially corresponds to the image sensor pattern on the device wafer. The bonding step can include applying an adhesive to the image sensor surface. The adhesive can be a UV curable optical adhesive. The bonding step can include exposing the device-adhesive-glass sandwich construction to UV light to cure the adhesive. The bonding procedure can include setting the distance between the image sensor and the glass cover. The sensor-adhesive-glass sandwich construction can be cut into dies prior to loosening the construction from the glass wafer fixture to create individual devices. The sensor-adhesive-glass sandwich construction can be cut into dies after the construction is released from the glass wafer fixture to create individual devices. The step of cutting the glass sheet can include an additional step of setting a push along the thickness dimension of the glass. The step of loosening the cut glass granules can include holding the glass dies The adhesive to the glass wafer fixture is exposed to UV light.
除了上述之示範性觀點與實施例以外,藉著參考所附圖式並研讀以下說明,本發明之進一步的觀點與實施例將會變得顯而易見。Further aspects and embodiments of the present invention will become apparent from the Detailed Description of the Drawing.
示範性實施例係顯示於參考圖式中,文中所揭露之實施例與圖式旨在做為說明而並非限制之用。The exemplary embodiments are shown in the drawings, which are intended to be illustrative and not limiting.
第1A圖係為一剖面圖,該圖顯示一附裝步驟,其中一晶圓尺寸玻璃係附裝到位於一玻璃晶圓運送器上之一玻璃晶圓夾具;第1B圖顯示施加到玻璃晶圓夾具以固持該玻璃晶圓之黏著劑圖案;第2A圖顯示使用一切割裝置將該玻璃晶圓切割成為預定的形狀;第2B圖顯示設置一推拔以切割玻璃晶粒之一可隨選步驟;第2C圖顯示附裝到該夾具之經切割玻璃晶圓的一剖面圖;第3A與3B圖顯示翻轉玻璃晶圓運送器之剖面圖,其中玻璃晶圓夾具與經切割玻璃晶圓對於具有多個影像感測器裝置之一CMOS晶圓成相對的關係;第3A圖顯示一種實施例,其中該黏著劑係施加到影像感測器;第3B圖顯示另一種實施例,其中該黏著劑係施加到經 切割玻璃晶粒;第4圖顯示翻轉之經切割玻璃晶粒在其對齊該CMOS影像感測器晶圓以後的附裝步驟之一剖面圖;第5圖顯示鬆開步驟之一剖面圖,其中經結合之CMOS晶圓以及玻璃晶圓係自該玻璃晶圓夾具鬆開;第6A圖顯示一種實施例之切割步驟的剖面圖,其中該結合玻璃之CMOS影像感測器裝置在從玻璃晶圓夾具鬆開以後係使用一晶粒切割器加以分離;第6B圖顯示一經切割影像感測器之一剖面圖,其具有玻璃結合到該感測器;第7圖係為一另擇實施例之一剖面圖,該圖顯示附裝到UV切割帶並具有腔室壁附裝到該玻璃之相反側的一晶圓尺寸玻璃之一部分;第7A圖係為具有形成腔室壁之黏著劑的一玻璃晶圓的一立體圖;第8圖係為第7圖之該玻璃晶圓以一鋸條加以切割之一立體圖;第9圖係顯示一背研磨步驟,其中具有多個影像感測器之一晶圓係進行晶背研磨;第10A圖與10B圖顯示使用一玻璃支撐夾具將經切割玻璃附裝到具有多個腔室壁之影像感測器晶圓;第11圖顯示一鬆開步驟,其中該玻璃支撐夾具鬆開該經切割玻璃;第12圖顯示一晶圓切割步驟; 第13圖係為一經切割之影像感測器封裝體的一剖面圖,其具有藉由多個腔室壁隔開影像感測器基板之一遮蓋玻璃。Figure 1A is a cross-sectional view showing an attachment step in which a wafer size glass is attached to a glass wafer holder located on a glass wafer carrier; Figure 1B shows application to the glass crystal a circular clamp to hold the adhesive pattern of the glass wafer; FIG. 2A shows that the glass wafer is cut into a predetermined shape by using a cutting device; FIG. 2B shows that one of the glass crystal grains can be cut by setting a push-out Step; Figure 2C shows a cross-sectional view of the cut glass wafer attached to the fixture; Figures 3A and 3B show a cross-sectional view of the flip glass wafer carrier, wherein the glass wafer holder and the cut glass wafer are A CMOS wafer having one of a plurality of image sensor devices is in an opposing relationship; FIG. 3A shows an embodiment in which the adhesive is applied to the image sensor; and FIG. 3B shows another embodiment in which the adhesive is applied Applied to the Cutting the glass dies; Figure 4 shows a cross-sectional view of the attached step of the turned-cut glass dies after it is aligned with the CMOS image sensor wafer; Figure 5 shows a cross-sectional view of the squeezing step, wherein The combined CMOS wafer and glass wafer are released from the glass wafer fixture; Figure 6A shows a cross-sectional view of the cutting step of an embodiment in which the glass-bonded CMOS image sensor device is on a glass wafer After the fixture is loosened, a die cutter is used for separation; FIG. 6B shows a cross-sectional view of a cut image sensor with glass bonded to the sensor; FIG. 7 is an alternative embodiment A cross-sectional view showing a portion of a wafer-sized glass attached to a UV dicing tape having a chamber wall attached to the opposite side of the glass; and FIG. 7A is a portion having an adhesive forming a chamber wall A perspective view of the glass wafer; FIG. 8 is a perspective view of the glass wafer cut by a saw blade of FIG. 7; and FIG. 9 shows a back grinding step in which one of the plurality of image sensors is crystallized Round system for crystal back grinding; Figure 10A Figure 10B shows the attachment of the cut glass to an image sensor wafer having a plurality of chamber walls using a glass support fixture; Figure 11 shows a release step in which the glass support fixture releases the cut glass; Figure 12 shows a wafer cutting step; Figure 13 is a cross-sectional view of a diced image sensor package having one of the image sensor substrates separated by a plurality of chamber walls to cover the glass.
現在將參考所附圖式,其有助於說明本發明之各種相關特性。儘管現在主要將本發明說明成一種將玻璃附裝到一影像感測器封裝體之方法,應明確地理解到的是,本發明能夠適用於其他需要/希望用到玻璃附裝之晶圓級封裝應用。另擇地,材料選擇並非限定於玻璃,而是能夠延伸到玻璃以外的任何透明或是諸如抗反光、抗靜電以及濾光性質之部分透明材料。就此點而論,提出以下將玻璃附裝到一影像感測器封裝體之方法的說明作為顯示與說明用途。此外,該說明並非旨在將本發明限制在文中的揭露內容。因此,與以下說明相等之變化與修正形式以及相關技藝的技術與知識係屬於本發明之範疇。文中所述之實施例係進一步旨在解釋實行本發明之模式,並使其他熟諳此技藝之人士將本發明應用於此實施例或其他實施例,以及由於本發明之特殊應用或使用所需要的各種修正形式。Reference will now be made to the accompanying drawings, which in the < Although the present invention is now primarily described as a method of attaching glass to an image sensor package, it should be expressly understood that the present invention is applicable to other wafer grades that require/desirable use of glass attachment. Package application. Alternatively, the material selection is not limited to glass, but any transparent material that can extend beyond the glass or that is partially reflective, such as anti-reflective, anti-static, and filter properties. As such, the following description of a method of attaching glass to an image sensor package is presented for display and illustrative purposes. In addition, the description is not intended to limit the invention to the disclosure. Therefore, the variations and modifications of the following description and the techniques and knowledge of the related art are within the scope of the invention. The embodiments described herein are further intended to explain the mode of carrying out the invention, and others skilled in the art will apply the invention to this or other embodiments, as well as the particular application or use of the invention. Various forms of correction.
發明者理解到的是,諸如Shellcase CF封裝之WLP方法,其中玻璃係在將其附裝到裝置晶圓之後加以切割有可能產生裝置損壞。此損壞可能由於在晶圓背研磨或是在玻璃附裝到裝置晶圓以後進行切割期間所衍生的機械應力所引起。此外,影像感測器可能由於切割玻璃方法期間所累 積引發的靜電放電而產生損壞。另一種可能產生故障的方法係有關於電子襯墊由於玻璃晶圓切割步驟期間所產生之玻璃碎屑的污染。本發明提出的方法旨在解決這些與其他缺點。The inventors have appreciated that a WLP method such as the Shellcase CF package in which the glass is cut after it is attached to the device wafer may result in device damage. This damage may be caused by mechanical stresses that are generated during wafer back grinding or cutting after the glass is attached to the device wafer. In addition, image sensors may be tired during the method of cutting glass The electrostatic discharge caused by the accumulation causes damage. Another method that can cause failure is the contamination of the electronic pad due to the glass debris generated during the glass wafer cutting step. The method proposed by the present invention aims to address these and other disadvantages.
本發明提出之用於一微電子影像感測器裝置的WLP方法包括之步驟為在裝置封裝方法開始時,將一薄的經切割玻璃板附裝於晶圓基板上。該玻璃蓋體在晶圓製造的晶粒切割步驟期間對該裝置提供支撐。此外,該玻璃蓋體能夠防止來自於周遭環境之微粒嵌入微鏡片或是影像裝置。The WLP method for a microelectronic image sensor device proposed by the present invention includes the step of attaching a thin cut glass plate to a wafer substrate at the beginning of the device packaging process. The glass cover provides support to the device during the die cutting step of wafer fabrication. In addition, the glass cover prevents particles from the surrounding environment from being embedded in the microlens or imaging device.
玻璃附裝方法之一種實施例係有關於在一晶圓上製造影像感測器(以及微鏡片)之應用。一玻璃晶圓(例如,厚度400微米)首先係暫時地安置到一組裝在一玻璃晶圓運送器14上之玻璃晶圓夾具12(其可為透明),如第1A圖中所示。該暫時性安置能夠透過使用一切割帶之矩陣16(其能夠使用超紫外光(UV)加以固化)加以達成,如第1B圖中所示。該暫時性安置亦能夠使用其他黏著材料加以達成。切割帶之圖案符合影像感測器晶圓的圖案,透過該圖案能夠將其製造成使其具有較影像感測器晶圓更寬的通道。換言之,各個黏著晶粒具有對應於影像感測器晶粒縮小的覆蓋區。One embodiment of a glass attachment method relates to the application of image sensors (and microlenses) on a wafer. A glass wafer (e.g., 400 microns thick) is first temporarily placed into a glass wafer holder 12 (which may be transparent) assembled on a glass wafer carrier 14, as shown in Figure 1A. This temporary placement can be achieved by using a matrix 16 of dicing tapes that can be cured using ultra-ultraviolet light (UV), as shown in Figure 1B. This temporary placement can also be achieved using other adhesive materials. The pattern of the dicing tape conforms to the pattern of the image sensor wafer through which it can be fabricated to have a wider channel than the image sensor wafer. In other words, each of the adhesive dies has a footprint corresponding to the reduction of the image sensor dies.
玻璃晶圓10接著係加以切割(以符合位於影像感測器上的晶粒圖案),如第2A與2C圖中所示。此處,該玻璃圖案能夠加以製造成使其具有較影像感測器晶圓更窄的通道。換言之,各個玻璃晶粒具有由一影像感測器晶粒放大的覆蓋區,以致於使其超過影像感測器之尺寸,但卻不會覆蓋 用於影像感測器裝置之電子接點襯墊。此外,蓋體之邊緣20能夠稍微向內推拔,如第2B圖中所示,以便使結合到影像感測器之表面較相反表面為大。The glass wafer 10 is then cut (to conform to the grain pattern on the image sensor) as shown in Figures 2A and 2C. Here, the glass pattern can be fabricated to have a narrower channel than the image sensor wafer. In other words, each of the glass dies has a footprint that is magnified by an image sensor die such that it exceeds the size of the image sensor but does not cover Electronic contact pad for image sensor devices. In addition, the edge 20 of the cover can be pushed slightly inward, as shown in Figure 2B, so that the surface bonded to the image sensor is larger than the opposite surface.
在經切割玻璃進行清潔以後,該玻璃晶圓運送器以及固持該經切割玻璃之玻璃晶圓夾具(一併顯示為22)係加以翻轉與對齊,以便使經切割玻璃之暴露表面面對影像感測器晶圓24,並鏡射位於晶圓上的影像感測器裝置之圖案,如第3A與3B圖中所示。產生稍微放大尺寸之蓋體使得此對齊步驟對於佈置或對齊誤差影響不會太過敏感。光學黏著劑26係選擇性地施加到影像感測器晶圓24,以致於使其塗佈各個光學影像感測器以及其對應微鏡片(若可行的話),留下周圍未塗佈之電子接點,如第3A圖中所示。該方法之一樣態包括控制黏著劑之分配方式(圖案與數量)以及選擇黏著劑,以便使能夠降低影像品質之諸如留存在影像感測器內微氣泡的缺陷降到最低。此外,由於黏著劑終究會與外部環境接觸,故黏著劑亦必須能夠耐熱與耐水。After being cleaned by the cut glass, the glass wafer carrier and the glass wafer holder holding the cut glass (shown as 22 together) are flipped and aligned so that the exposed surface of the cut glass faces the image. The wafer 24 is mirrored and mirrored by a pattern of image sensor devices on the wafer, as shown in Figures 3A and 3B. Producing a slightly enlarged cover allows this alignment step to be less sensitive to placement or alignment errors. The optical adhesive 26 is selectively applied to the image sensor wafer 24 such that it coats the individual optical image sensors and their corresponding microlenses (if applicable), leaving the surrounding uncoated electronic contacts Point, as shown in Figure 3A. The state of the method includes controlling the manner in which the adhesive is dispensed (pattern and number) and selecting an adhesive to minimize defects such as microbubbles remaining in the image sensor that can degrade image quality. In addition, since the adhesive will eventually come into contact with the external environment, the adhesive must also be resistant to heat and water.
在另一實施例中,光學黏著劑26係施加到經切割玻璃而非影像感測器/鏡片組合件,且接著該玻璃晶粒係與影像感測器晶圓24相結合,如第3B圖中所示。能夠實施諸如旋轉噴塗之一方法將黏著劑26施加到經切割玻璃晶粒。由於光學黏著劑相當昂貴且此方法會耗費更多黏著劑,故能夠對於此方法進行改良,使其更符合經濟效益。In another embodiment, the optical adhesive 26 is applied to the cut glass rather than the image sensor/lens assembly, and then the glass die is combined with the image sensor wafer 24, as shown in FIG. 3B. Shown in . Adhesion agent 26 can be applied to the cut glass dies by one of methods such as spin coating. Since optical adhesives are relatively expensive and this method consumes more adhesive, this method can be modified to make it more economical.
經切割玻璃晶圓接著係結合到影像感測器晶圓(一併稱之為30),其中並無腔室,如第4圖中所示。某些黏著劑 施加尺寸與結合程序能夠包括固定玻璃與影像感測器表面的距離,以及在特定的平行限制下產生一玻璃/影像感測器夾心構造。該光學影像感測器晶圓夾心構造30係自玻璃晶圓夾具12鬆開,如第5圖中所示。黏著劑之固化以及從玻璃晶圓夾具12鬆開光學影像感測器晶圓夾心構造30能夠藉由明智地選擇UV波長或是特殊溫度與曝光時間,而在同一步驟中完成。The cut glass wafer is then bonded to an image sensor wafer (collectively referred to as 30) with no chambers as shown in FIG. Some adhesives The application size and bonding procedure can include the distance of the fixed glass from the image sensor surface and the creation of a glass/image sensor sandwich construction under specific parallel constraints. The optical image sensor wafer sandwich construction 30 is released from the glass wafer fixture 12 as shown in FIG. The curing of the adhesive and the release of the optical image sensor wafer sandwich construction 30 from the glass wafer holder 12 can be accomplished in the same step by judiciously selecting the UV wavelength or the particular temperature and exposure time.
光學影像感測器晶圓夾心構造30接著係使用做為支撐之用的玻璃晶粒加以切成晶粒,如第6A圖中所示。在一另擇實施例中,該切割能夠在自玻璃晶圓夾具鬆開該夾心構造之前完成。一代表性影像感測器32以及保護玻璃蓋體係顯示於第6B圖中。此晶圓級封裝方法相信係為對於現今業界所使用的晶圓級封裝方法之一較低成本的另擇方式。The optical image sensor wafer sandwich construction 30 is then cut into grains using glass dies for support, as shown in Figure 6A. In an alternative embodiment, the cutting can be completed prior to loosening the sandwich construction from the glass wafer fixture. A representative image sensor 32 and a protective glass cover system are shown in Figure 6B. This wafer level packaging approach is believed to be an alternative to the lower cost of one of the wafer level packaging methods used in the industry today.
另擇地,一覆蓋玻璃能夠經由腔室壁附裝到一影像感測器,以產生一內部腔室,如第7到13圖中所示。如第7圖中所示,一玻璃片50,其一側施加有UV切割帶52,在該玻璃片50之另一側上係附裝有多個腔室壁54。該等腔室壁能夠由LE型砧模切,一層環氧物56係施加到各個腔室壁54之頂表面。Alternatively, a cover glass can be attached to an image sensor via the chamber wall to create an internal chamber, as shown in Figures 7-13. As shown in Fig. 7, a glass sheet 50 is coated with a UV dicing tape 52 on one side and a plurality of chamber walls 54 attached to the other side of the glass sheet 50. The chamber walls can be cut by a LE-type anvil die, and an epoxy 56 is applied to the top surface of each chamber wall 54.
如第7A圖中所示,該等腔室壁54能夠藉著使用在切割進行之前附裝到玻璃板的黏著劑薄膜所形成。As shown in Figure 7A, the chamber walls 54 can be formed by using an adhesive film attached to the glass sheet prior to cutting.
接著,如第8圖中所示,該玻璃片50係以一切割鋸條58加以切割成為多個經切割玻璃晶粒60,其係藉由UV切割帶52固持在一起。同時,如第9圖中所示,一矽晶圓62(其上 形成有多個個別的影像感測器64)係以一研磨器66從其背側進行研磨,以便將該矽晶圓62背研磨到一所需厚度。由於此背研磨操作係實行於矽晶圓62,故其能夠在將腔室壁54施加到玻璃片50以及切割該玻璃片50的步驟之前、期間或之後加以實行。Next, as shown in FIG. 8, the glass sheet 50 is cut into a plurality of cut glass dies 60 by a dicing saw blade 58 which are held together by a UV dicing tape 52. At the same time, as shown in Figure 9, a wafer 62 (on which A plurality of individual image sensors 64) are formed by a grinder 66 from its back side to back grind the tantalum wafer 62 to a desired thickness. Since this back grinding operation is performed on the tantalum wafer 62, it can be carried out before, during or after the step of applying the chamber wall 54 to the glass sheet 50 and cutting the glass sheet 50.
此步驟之後,如第10A圖中所示,其上具有腔室壁54之經切割玻璃晶粒60能夠對齊位於矽晶圓62上的個別影像感測器64。該經切割玻璃晶粒60係藉由一玻璃晶圓夾具70固持成與矽晶圓62相對齊。該玻璃晶圓夾具70能夠在施加腔室壁54以及將其切割成為單獨的玻璃晶粒60之前、期間或之後暫時地附裝到玻璃片50。如第10B圖中所示,該玻璃晶圓夾具70以及矽晶圓62係彼此相對移動,以便使位於腔室壁54上之環氧物與矽晶圓62在圍繞個別影像感測器64處相接觸。此動作將腔室壁54結合到矽晶圓62。After this step, as shown in FIG. 10A, the cut glass dies 60 having the chamber walls 54 can align with the individual image sensors 64 on the ruthenium wafer 62. The cut glass die 60 is held in alignment with the tantalum wafer 62 by a glass wafer holder 70. The glass wafer holder 70 can be temporarily attached to the glass sheet 50 before, during, or after application of the chamber wall 54 and cutting it into individual glass dies 60. As shown in FIG. 10B, the glass wafer holder 70 and the tantalum wafer 62 are moved relative to one another such that the epoxy and tantalum wafer 62 on the chamber wall 54 are around the individual image sensor 64. Contact. This action bonds the chamber wall 54 to the tantalum wafer 62.
為了從總成鬆開玻璃晶圓夾具70,一UV光源(未顯示)提供UV光線,其使得玻璃晶圓夾具70鬆開該經切割玻璃晶粒60,如第11圖中所示。經切割玻璃晶粒60之外部表面如今能夠加以清潔(未顯示)。接著使用相同或不同的切割鋸條72,在腔室壁54之外側以及個別經切割玻璃晶粒60之間的位置切開該矽晶圓62,如第12圖中所示。以此方式將矽晶圓62分割成為個別的影像感測器封裝體74,其中一封裝體係顯示於第13圖中。To release the glass wafer holder 70 from the assembly, a UV light source (not shown) provides UV light that causes the glass wafer holder 70 to release the cut glass die 60, as shown in FIG. The outer surface of the cut glass die 60 can now be cleaned (not shown). The tantalum wafer 62 is then slit at the outer side of the chamber wall 54 and the individual cut glass dies 60 using the same or different dicing saw blades 72, as shown in FIG. In this manner, the germanium wafer 62 is divided into individual image sensor packages 74, one of which is shown in FIG.
展示本發明之前述說明係作為顯示與說明之用。此外,該說明並非旨在將本發明限定於文中所揭露的形式。 因此,與上述說明相等之變化與修正形式以及相關技藝的技術與知識係屬於本發明之範疇。文中先前所述之實施例係進一步旨在解釋目前已知實行本發明之最佳模式,並使其他熟諳此技藝之人士將本發明應用於此實施例或其他實施例,以及由於本發明之特殊應用或使用所需要的各種修正形式。所附申請專利範圍預計視為包括先前技術所容許之範圍的另擇實施例。The foregoing description of the invention has been presented for purposes of illustration and description. Furthermore, the description is not intended to limit the invention to the forms disclosed herein. Therefore, the variations and modifications of the above description and the related art and related art are within the scope of the present invention. The embodiments described herein are intended to be illustrative of the best mode for carrying out the present invention, and others skilled in the art will apply the invention to this or other embodiments, and Apply or use the various corrections you need. The scope of the appended claims is intended to be considered as an alternative embodiment of the scope of the invention.
10‧‧‧玻璃晶圓10‧‧‧glass wafer
12‧‧‧玻璃晶圓夾具12‧‧‧Glass wafer fixture
14‧‧‧玻璃晶圓運送器14‧‧‧Glass Wafer Carrier
16‧‧‧切割帶矩陣16‧‧‧Cutting Tape Matrix
20‧‧‧蓋體邊緣20‧‧‧ cover edge
22‧‧‧玻璃晶圓運送器與玻璃晶圓夾具22‧‧‧Glass wafer carrier and glass wafer fixture
24‧‧‧影像感測器晶圓24‧‧‧Image Sensor Wafer
26‧‧‧光學黏著劑26‧‧‧Optical Adhesive
30‧‧‧光學影像感測器晶圓夾心構造30‧‧‧Optical image sensor wafer sandwich construction
32‧‧‧影像感測器32‧‧‧Image Sensor
50‧‧‧玻璃片50‧‧‧Stainless glass
52‧‧‧UV切割帶52‧‧‧UV cutting tape
54‧‧‧腔室壁54‧‧‧ chamber wall
56‧‧‧環氧物56‧‧‧epoxy
58‧‧‧切割鋸條58‧‧‧ cutting saw blade
60‧‧‧經切割玻璃晶粒60‧‧‧Cleaved glass grains
62‧‧‧矽晶圓62‧‧‧矽 wafer
64‧‧‧影像感測器64‧‧‧Image sensor
66‧‧‧研磨器66‧‧‧Cream
70‧‧‧玻璃晶圓夾具70‧‧‧Glass wafer fixture
72‧‧‧切割鋸條72‧‧‧ cutting saw blade
74‧‧‧影像感測器封裝體74‧‧‧Image sensor package
第1A圖係為一剖面圖,該圖顯示一附裝步驟,其中一晶圓尺寸玻璃係附裝到位於一玻璃晶圓運送器上之一玻璃晶圓夾具;第1B圖顯示施加到玻璃晶圓夾具以固持該玻璃晶圓之黏著劑圖案;第2A圖顯示使用一切割裝置將該玻璃晶圓切割成為預定的形狀;第2B圖顯示設置一推拔以切割玻璃晶粒之一可隨選步驟;第2C圖顯示附裝到該夾具之經切割玻璃晶圓的一剖面圖;第3A與3B圖顯示翻轉玻璃晶圓運送器之剖面圖,其中玻璃晶圓夾具與經切割玻璃晶圓對於具有多個影像感測器裝置之一CMOS晶圓成相對的關係;第3A圖顯示一種實施例,其中該黏著劑係施加到影像感測器; 第3B圖顯示另一種實施例,其中該黏著劑係施加到經切割玻璃晶粒;第4圖顯示翻轉之經切割玻璃晶粒在其對齊該CMOS影像感測器晶圓以後的附裝步驟之一剖面圖;第5圖顯示鬆開步驟之一剖面圖,其中經結合之CMOS晶圓以及玻璃晶圓係自該玻璃晶圓夾具鬆開;第6A圖顯示一種實施例之切割步驟的剖面圖,其中該結合玻璃之CMOS影像感測器裝置在從玻璃晶圓夾具鬆開以後係使用一晶粒切割器加以分離;第6B圖顯示一經切割影像感測器之一剖面圖,其具有玻璃結合到該感測器;第7圖係為一另擇實施例之一剖面圖,該圖顯示附裝到UV切割帶並具有腔室壁附裝到該玻璃之相反側的一晶圓尺寸玻璃之一部分;第7A圖係為具有形成腔室壁之黏著劑的一玻璃晶圓的一立體圖;第8圖係為第7圖之該玻璃晶圓以一鋸條加以切割之一立體圖;第9圖係顯示一背研磨步驟,其中具有多個影像感測器之一晶圓係進行晶背研磨;第10A圖與10B圖顯示使用一玻璃支撐夾具將經切割玻璃附裝到具有多個腔室壁之影像感測器晶圓;第11圖顯示一鬆開步驟,其中該玻璃支撐夾具鬆開該經切割玻璃; 第12圖顯示一晶圓切割步驟;第13圖係為一經切割之影像感測器封裝體的一剖面圖,其具有藉由多個腔室壁隔開影像感測器基板之一遮蓋玻璃。Figure 1A is a cross-sectional view showing an attachment step in which a wafer size glass is attached to a glass wafer holder located on a glass wafer carrier; Figure 1B shows application to the glass crystal a circular clamp to hold the adhesive pattern of the glass wafer; FIG. 2A shows that the glass wafer is cut into a predetermined shape by using a cutting device; FIG. 2B shows that one of the glass crystal grains can be cut by setting a push-out Step; Figure 2C shows a cross-sectional view of the cut glass wafer attached to the fixture; Figures 3A and 3B show a cross-sectional view of the flip glass wafer carrier, wherein the glass wafer holder and the cut glass wafer are A CMOS wafer having one of a plurality of image sensor devices is in an opposing relationship; FIG. 3A shows an embodiment in which the adhesive is applied to the image sensor; Figure 3B shows another embodiment in which the adhesive is applied to the cut glass dies; Figure 4 shows the attachment steps of the inverted cut glass dies after they are aligned with the CMOS image sensor wafer. Figure 5 shows a cross-sectional view of a release step in which the bonded CMOS wafer and glass wafer are released from the glass wafer holder; Figure 6A shows a cross-sectional view of the cutting step of one embodiment The glass-incorporated CMOS image sensor device is separated by a die cutter after being released from the glass wafer jig; FIG. 6B shows a cross-sectional view of the cut image sensor having a glass bond To the sensor; FIG. 7 is a cross-sectional view of an alternative embodiment showing a wafer size glass attached to the UV dicing tape and having the chamber wall attached to the opposite side of the glass a part; FIG. 7A is a perspective view of a glass wafer having an adhesive forming a chamber wall; and FIG. 8 is a perspective view of the glass wafer cut by a saw blade of FIG. 7; Showing a back grinding step with One of the plurality of image sensors is subjected to crystal back grinding; FIGS. 10A and 10B show the attachment of the cut glass to the image sensor wafer having a plurality of chamber walls using a glass support jig; Figure 11 shows a release step in which the glass support fixture releases the cut glass; Figure 12 shows a wafer cutting step; Figure 13 is a cross-sectional view of a cut image sensor package having one of the image sensor substrates separated by a plurality of chamber walls to cover the glass.
10‧‧‧玻璃晶圓10‧‧‧glass wafer
12‧‧‧玻璃晶圓夾具12‧‧‧Glass wafer fixture
14‧‧‧玻璃晶圓運送器14‧‧‧Glass Wafer Carrier
16‧‧‧切割帶矩陣16‧‧‧Cutting Tape Matrix
Claims (49)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US34398508A | 2008-12-24 | 2008-12-24 | |
| US12/502,924 US8093092B2 (en) | 2007-06-08 | 2009-07-14 | Techniques for glass attachment in an image sensor package |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201034060A TW201034060A (en) | 2010-09-16 |
| TWI480935B true TWI480935B (en) | 2015-04-11 |
Family
ID=42572525
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098144464A TWI480935B (en) | 2008-12-24 | 2009-12-23 | Techniques for glass attachment in an image sensor package |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP5574699B2 (en) |
| CN (1) | CN101807528B (en) |
| TW (1) | TWI480935B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103996659A (en) * | 2014-05-15 | 2014-08-20 | 华进半导体封装先导技术研发中心有限公司 | Image sensor glass cavity wall manufacturing method |
| US12074044B2 (en) * | 2018-11-14 | 2024-08-27 | Cyberoptics Corporation | Wafer-like sensor |
| CN114573239A (en) * | 2022-02-23 | 2022-06-03 | 苏州轩创科技有限公司 | A kind of thinning method of CIS glass cover |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060073630A1 (en) * | 2004-09-24 | 2006-04-06 | Hua-Hsiang Liu | Image sensor packaging method and structure thereof |
| TW200713615A (en) * | 2005-09-23 | 2007-04-01 | Altus Technology Inc | Process of making image sensor packages |
| TW200834900A (en) * | 2007-02-12 | 2008-08-16 | Visera Technologies Co Ltd | Optoelectronic microstructure elements and CMOS image sensor chip scale package |
| US7433555B2 (en) * | 2006-05-22 | 2008-10-07 | Visera Technologies Company Ltd | Optoelectronic device chip having a composite spacer structure and method making same |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004063782A (en) * | 2002-07-29 | 2004-02-26 | Fuji Photo Film Co Ltd | Solid-state image sensing device and its manufacturing method |
| US8092734B2 (en) * | 2004-05-13 | 2012-01-10 | Aptina Imaging Corporation | Covers for microelectronic imagers and methods for wafer-level packaging of microelectronics imagers |
| JP4310266B2 (en) * | 2004-12-06 | 2009-08-05 | パナソニック株式会社 | Application method and adhesion method of photosensitive curable resin |
| DE102005016751B3 (en) * | 2005-04-11 | 2006-12-14 | Schott Ag | Method for producing packaged electronic components |
| CN1905140A (en) * | 2005-07-29 | 2007-01-31 | 矽品精密工业股份有限公司 | Image sensor package, optical glass and processing method used therefor |
| CN101326641A (en) * | 2005-12-14 | 2008-12-17 | 富士胶片株式会社 | Solid-state imaging device and manufacturing method thereof |
| CN101346817B (en) * | 2005-12-26 | 2010-09-01 | 夏普株式会社 | Method for manufacturing solid-state imaging element module |
| JP2006313921A (en) * | 2006-06-21 | 2006-11-16 | Sharp Corp | Method for manufacturing substrate piece affixed to adhesive sheet |
| US20080191333A1 (en) * | 2007-02-08 | 2008-08-14 | Advanced Chip Engineering Technology Inc. | Image sensor package with die receiving opening and method of the same |
-
2009
- 2009-12-23 TW TW098144464A patent/TWI480935B/en not_active IP Right Cessation
- 2009-12-24 CN CN200911000182.8A patent/CN101807528B/en active Active
- 2009-12-24 JP JP2009293103A patent/JP5574699B2/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060073630A1 (en) * | 2004-09-24 | 2006-04-06 | Hua-Hsiang Liu | Image sensor packaging method and structure thereof |
| TW200713615A (en) * | 2005-09-23 | 2007-04-01 | Altus Technology Inc | Process of making image sensor packages |
| US7433555B2 (en) * | 2006-05-22 | 2008-10-07 | Visera Technologies Company Ltd | Optoelectronic device chip having a composite spacer structure and method making same |
| TW200834900A (en) * | 2007-02-12 | 2008-08-16 | Visera Technologies Co Ltd | Optoelectronic microstructure elements and CMOS image sensor chip scale package |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101807528A (en) | 2010-08-18 |
| CN101807528B (en) | 2015-09-30 |
| JP5574699B2 (en) | 2014-08-20 |
| JP2010153874A (en) | 2010-07-08 |
| TW201034060A (en) | 2010-09-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI683392B (en) | Method of processing wafer | |
| TWI724020B (en) | Method of processing wafer and protective sheeting for use in this method | |
| TWI404196B (en) | Method for manufacturing solid-state imaging device module | |
| US8772070B2 (en) | Method for manufacturing solid-state imaging device | |
| US7495315B2 (en) | Method and apparatus of fabricating a semiconductor device by back grinding and dicing | |
| US8093092B2 (en) | Techniques for glass attachment in an image sensor package | |
| CN104380466B (en) | Method for manufacturing imaging device and method for manufacturing semiconductor device | |
| JP5939810B2 (en) | Device wafer processing method | |
| JP6147250B2 (en) | Imaging device manufacturing method and semiconductor device manufacturing method | |
| JP6940217B2 (en) | Protective seating, wafer, wafer and protective seating combination handling system for use in wafer processing | |
| TWI767022B (en) | Substrate processing method and substrate processing system | |
| US20060051887A1 (en) | Manufacturing method and joining device for solid-state imaging devices | |
| TWI480935B (en) | Techniques for glass attachment in an image sensor package | |
| KR101317983B1 (en) | Method for cutting solid-state image pickup device | |
| TW201729308A (en) | Wafer-level package structure manufacturing method | |
| US20050048267A1 (en) | Optical element, optical element wafer, and manufacturing methods for the same | |
| JP2024106774A (en) | PROTECTIVE SHEET INSTALLATION METHOD AND PROTECTIVE SHEET | |
| JP2006093458A (en) | Method for manufacturing solid-state image pickup device | |
| JP2006080123A (en) | Method for manufacturing solid state imaging device | |
| JP2016219454A (en) | Manufacturing method for solid state image sensor | |
| JP2006120796A (en) | Manufacturing method of solid state imaging device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |