TWI476805B - Electron gun and the vacuum evacuation apparatus - Google Patents
Electron gun and the vacuum evacuation apparatus Download PDFInfo
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- TWI476805B TWI476805B TW099131461A TW99131461A TWI476805B TW I476805 B TWI476805 B TW I476805B TW 099131461 A TW099131461 A TW 099131461A TW 99131461 A TW99131461 A TW 99131461A TW I476805 B TWI476805 B TW I476805B
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- 238000010894 electron beam technology Methods 0.000 claims description 46
- 238000010438 heat treatment Methods 0.000 claims description 7
- 239000002784 hot electron Substances 0.000 claims description 7
- 239000011148 porous material Substances 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 2
- 238000007599 discharging Methods 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 description 21
- 239000000758 substrate Substances 0.000 description 8
- 238000007740 vapor deposition Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 230000005684 electric field Effects 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000004088 simulation Methods 0.000 description 4
- 230000002159 abnormal effect Effects 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000010849 ion bombardment Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
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- 230000001678 irradiating effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
- C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/06—Electron sources; Electron guns
- H01J37/063—Geometrical arrangement of electrodes for beam-forming
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/0203—Protection arrangements
- H01J2237/0213—Avoiding deleterious effects due to interactions between particles and tube elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/063—Electron sources
- H01J2237/06308—Thermionic sources
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/31—Processing objects on a macro-scale
- H01J2237/3132—Evaporating
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- Electron Sources, Ion Sources (AREA)
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Description
本發明,係有關於電子鎗。The present invention relates to an electron gun.
電子鎗,係使放出了的電子加速並且收斂為束狀,而將電子束照射至配置在真空槽內之對象物處的裝置,例如,係被使用有對於對象物而照射電子束並作加熱而在真空氛圍中進行基板之成膜的成膜裝置中。The electron gun is a device that accelerates the emitted electrons and converges into a bundle shape, and irradiates the electron beam to the object disposed in the vacuum chamber, for example, by irradiating the electron beam with the object and heating it. The film forming apparatus which performs film formation of a board|substrate in a vacuum atmosphere.
當此種電子束在電子鎗之內部或者是真空槽之內部而前進時,會與殘留之氣體相碰撞,並產生正帶電之離子。When such an electron beam advances inside the electron gun or inside the vacuum chamber, it collides with the residual gas and generates positively charged ions.
此正離子,係會被電子束之空間電荷所拉扯,並集合在電子束之中心軸線上,且進而朝向電位為低之陰極電極來沿著中心軸線而作逆方向前進。The positive ions are pulled by the space charge of the electron beam and are collected on the central axis of the electron beam, and further toward the cathode electrode having a low potential to advance in the reverse direction along the central axis.
在真空槽內或者是電子放出口附近所產生的正離子,最終係會被拉向陰極電極並被作加速,而與陰極電極作碰撞。The positive ions generated in the vacuum chamber or near the electron discharge port are eventually pulled toward the cathode electrode and accelerated to collide with the cathode electrode.
由於此碰撞所導致之離子衝擊,陰極電極係會受到損傷,並造成電子放出面之後退、變形,更嚴重的情況時,會在中心部處產生穿孔,而成為陰極電極之壽命縮短的主要原因。又,經由離子之碰撞,陰極電極係被作濺鍍,而飛散之陰極電極材料,主要會附著在陽極電極上,此會導致陽極電極之溫度變化等並造成剝離等之事態,而亦會成為異常放電之原因。Due to the ion impact caused by this collision, the cathode electrode system is damaged, and the electron emission surface is retreated and deformed. In a more serious case, perforation occurs at the center portion, which is the main cause of shortening the life of the cathode electrode. . Further, the collision of the ions causes the cathode electrode to be sputtered, and the scattered cathode electrode material mainly adheres to the anode electrode, which causes a change in the temperature of the anode electrode and the like, and causes a phenomenon such as peeling. The cause of abnormal discharge.
[專利文獻1]日本特公平07-007648號公報[Patent Document 1] Japanese Patent Publication No. 07-007648
本發明,係為了解決上述先前技術之問題而創作者,其目的,係在於:對於電子在真空槽內部或者是電子鎗內部而與殘留氣體相碰撞並使所產生了的正離子與陰極電極相碰撞的情形作防止,而提供一種長壽命之電子鎗。The present invention has been made in order to solve the problems of the prior art described above, and the object thereof is to collide with residual gas for electrons inside a vacuum chamber or inside an electron gun and collide the generated positive ions with the cathode electrode. The situation is prevented, and a long-life electron gun is provided.
本發明,係為一種電子鎗,其特徵為,具備有:陰極電極,係被作加熱並放出熱電子;和柵電極(Wehnelt electrode),係將從前述陰極電極所放出之電子束作集束;和陽極電極,係具備有陽極孔,並相對於前述陰極電極而被施加有正電壓,且前述熱電子係作為電子束而通過前述陽極孔;和推斥電極(repeller electrode),係相對於前述陽極電極而被施加有正電壓,並被設置在前述陽極電極與放出前述電子束的放出口之間,且使前述電子束沿著中心軸線而作通過;和放出口,係將通過了前述推斥電極的前述電子束放出。The present invention is an electron gun characterized by comprising: a cathode electrode which is heated to emit hot electrons; and a gate electrode for collecting electron beams emitted from the cathode electrode; The anode electrode is provided with an anode hole, and a positive voltage is applied to the cathode electrode, and the thermoelectron passes through the anode hole as an electron beam; and a repeller electrode is opposite to the anode The electrode is applied with a positive voltage and is disposed between the anode electrode and the discharge port for discharging the electron beam, and passes the electron beam along the central axis; and the discharge port passes through the aforementioned repulsive The aforementioned electron beam of the electrode is discharged.
本發明,係為一種電子鎗,其中,係具備有將前述陰極電極與前述柵電極與前述陽極電極以及前述推斥電極作配置之筐體,在前述筐體中,係設置有將前述筐體內之空間中的前述陽極電極與前述陰極電極之間的部分作真空排氣之第1真空排氣口、和將前述筐體內之空間中的前述陽極電極與前述放出口之間的部分作真空排氣之第2真空排氣口。The present invention relates to an electron gun including a casing in which the cathode electrode and the gate electrode are disposed between the anode electrode and the repeller electrode, and the casing is provided with the casing. a portion of the space between the anode electrode and the cathode electrode for evacuating the first vacuum exhaust port, and a portion between the anode electrode and the discharge port in the space in the casing for vacuum evacuation The second vacuum exhaust port.
本發明,係為一種電子鎗,其中,在前述推斥電極處,係被形成有細孔,位置在被前述推斥電極所包圍了的空間中之氣體,係通過前述細孔而被從前述第2真空排氣口作真空排氣。The present invention is an electron gun in which a pore is formed in the repulsion electrode, and a gas positioned in a space surrounded by the repulsion electrode is passed through the pores 2 Vacuum exhaust port for vacuum exhaust.
本發明,係為一種電子鎗,其中,前述推斥電極,係經由網狀之導電材料而被成形為圓筒形形狀。The present invention is an electron gun in which the repulsion electrode is formed into a cylindrical shape via a mesh-shaped conductive material.
本發明,係為一種電子鎗,其中,前述推斥電極,係被構成為使內周面位置在同一之筒形狀的側面處。The present invention is an electron gun, wherein the repulsion electrode is configured such that an inner circumferential surface thereof is located at a side surface of the same cylindrical shape.
本發明,係為一種真空處理裝置,其特徵為,具備有:真空槽;和上述之任一者的電子鎗,前述真空槽之內部和前述電子鎗之內部係被作連接,在前述真空槽內,係被配置有照射對象物,該照射對象物,係被從前述放出口所放出之前述電子束作照射。The present invention relates to a vacuum processing apparatus comprising: a vacuum chamber; and an electron gun of any of the above, wherein an inside of the vacuum chamber and an inside of the electron gun are connected, and in the vacuum chamber, The object to be irradiated is disposed, and the object to be irradiated is irradiated with the electron beam emitted from the discharge port.
本發明,係如同上述一般地被構成,推斥電極,係為使電子束通過其之中心軸線上的軸對稱之圓筒形形狀或者是環形形狀,並被配置在較陽極電極而更靠電子束之下流側。The present invention is generally constructed as described above, and the repulsion electrode is a cylindrical shape or an annular shape in which an electron beam passes through a central axis thereof, and is disposed on the anode electrode and more electronically. Below the beam side.
在推斥電極處,係相對於陽極電極而被施加有正電壓,並以將從放出口側而朝向推斥電極所飛來之正離子推回至放出口側的方式而被構成。At the repulsion electrode, a positive voltage is applied to the anode electrode, and the positive ions flying from the discharge port side toward the repulsion electrode are pushed back to the discharge port side.
藉由以推斥電極來將電子束之在中心軸線上而溯流而上之正離子推回至真空槽側,能夠防止陰極電極之損傷並延長壽命。同時,係將由於經由離子轟擊(Ion-Bombard)而被作了濺鍍的陰極電極材料附著在陽極電極上一事所導致的異常放電之發生情況降低。By pushing the positive electrode on the central axis with the repeller electrode back to the vacuum groove side, it is possible to prevent the damage of the cathode electrode and prolong the life. At the same time, the occurrence of abnormal discharge due to adhesion of the cathode electrode material which was sputtered by ion bombardment (Ion-Bombard) to the anode electrode is lowered.
又,由於在推斥電極處,係被形成有細孔,並設為能夠經由細孔來對於被推斥電極所包圍了的空間作真空排氣,因此,就算是設置推斥電極,亦不會對於中間室之排氣造成阻礙。Further, since the pores are formed at the repulsion electrode, and the space surrounded by the repulsion electrode can be evacuated through the pores, even if the repulsion electrode is provided, It will hinder the exhaust of the intermediate chamber.
圖5(a),係為本發明之其中一例的真空處理裝置2,在真空槽18之內部,係被配置有蒸鍍材料4,在蒸鍍材料4之上方,係被配置有基板支持器5。Fig. 5 (a) is a vacuum processing apparatus 2 which is an example of the present invention, in which a vapor deposition material 4 is disposed inside a vacuum chamber 18, and a substrate holder is disposed above the vapor deposition material 4 5.
在真空槽18中,係被連接有真空槽用真空幫浦6,經由此真空槽用真空幫浦6來對於真空槽18內部作真空排氣,並一面維持真空氛圍一面將基板3搬入至真空槽18內而保持在基板支持器5上。In the vacuum chamber 18, a vacuum pump 6 for vacuum chamber is connected, and the inside of the vacuum chamber 18 is evacuated by the vacuum pump 6 through the vacuum chamber, and the substrate 3 is carried into the vacuum while maintaining the vacuum atmosphere. The inside of the groove 18 is held on the substrate holder 5.
在真空槽18之壁面或者是頂板處,係被安裝有本發明之電子鎗10,若是將電子鎗10內直接作真空排氣,並一面將電子鎗10內設為較真空槽18內而更高真空之氛圍,一面從電子鎗10來將電子束放出至真空槽18內,而對於蒸鍍材料4作照射,則蒸鍍材料4係在真空氛圍中蒸發,該蒸氣係到達基板3並在基板3表面上形成蒸鍍材料4之薄膜。The electron gun 10 of the present invention is mounted on the wall surface of the vacuum chamber 18 or at the top plate. If the electron gun 10 is directly evacuated, the inside of the electron gun 10 is set to be lower than the vacuum chamber 18 and the vacuum is higher. In the atmosphere, the electron beam is discharged from the electron gun 10 into the vacuum chamber 18, and when the vapor deposition material 4 is irradiated, the vapor deposition material 4 is evaporated in a vacuum atmosphere, and the vapor reaches the substrate 3 and is on the surface of the substrate 3. A film of the vapor deposition material 4 is formed.
於圖1中,對於由本發明所致之電子鎗10的內部之模式圖作展示。In Fig. 1, a schematic view of the interior of the electron gun 10 caused by the present invention is shown.
此電子鎗10,係具備有筒狀之筐體11,在筐體11之其中一端部處,係被形成有放出口13。在與放出口13相反側之底面12上,係被配置有陰極電極21。又,在接近於陰極電極21並相分離了的位置上,係被配置有柵電極22。The electron gun 10 is provided with a cylindrical casing 11 in which a discharge port 13 is formed at one end portion of the casing 11. The cathode electrode 21 is disposed on the bottom surface 12 on the side opposite to the discharge port 13. Further, the gate electrode 22 is disposed at a position close to the cathode electrode 21 and separated from each other.
柵電極22,係為在中央具備有身為貫通孔之柵孔25的環形狀,並具有與陰極電極21相同之中心軸線28,而以使柵孔25之內面與陰極側面相鄰的方式來作配置。The gate electrode 22 has a ring shape having a gate hole 25 as a through hole at the center, and has the same central axis 28 as the cathode electrode 21 so that the inner surface of the gate hole 25 is adjacent to the cathode side surface. For configuration.
在較陰極電極21和柵電極22而更靠放出口13側,係從柵電極22側起,而依序被配置有陽極電極23和推斥電極24。On the side closer to the discharge port 13 than the cathode electrode 21 and the gate electrode 22, the anode electrode 23 and the repeller electrode 24 are arranged in this order from the gate electrode 22 side.
陽極電極23,係為在中央而具備有身為貫通孔之陽極孔26的環形狀,推斥電極24,係為將其中一端朝向陰極電極21側並將另外一端朝向放出口13側之筒形狀,推斥電極24之中心軸線28,係通過陰極電極21之中心,又,柵電極22之中心軸線與陽極電極23之中心軸線,係被設為相互一致。於此,推斥電極24,係以使推斥電極24內部之電場成為軸對稱的方式,而成為圓筒形狀。The anode electrode 23 has a ring shape having an anode hole 26 that is a through hole at the center, and the repulsion electrode 24 is a cylindrical shape in which one end faces the cathode electrode 21 side and the other end faces the discharge port 13 side. The central axis 28 of the repeller electrode 24 passes through the center of the cathode electrode 21, and the central axis of the gate electrode 22 and the central axis of the anode electrode 23 are set to coincide with each other. Here, the repulsion electrode 24 has a cylindrical shape such that the electric field inside the repulsion electrode 24 is axisymmetric.
筐體11,係以使筐體11之內部經由放出口13而與真空槽18之內部作連接的方式,而被安裝在真空槽18處,筐體11係與真空槽18一同被與接地電位作連接。The casing 11 is attached to the vacuum chamber 18 such that the inside of the casing 11 is connected to the inside of the vacuum chamber 18 via the discharge port 13, and the casing 11 is connected to the ground potential together with the vacuum chamber 18. Make a connection.
在筐體11以及真空槽18之外部,係被配置有電源裝置30,各電極21~24係被與電源裝置30作連接。The power supply device 30 is disposed outside the casing 11 and the vacuum chamber 18, and the electrodes 21 to 24 are connected to the power supply device 30.
在筐體11處,係被設置有第1、第2真空排氣口34、35,第1、第2真空排氣口34、35,係被與真空幫浦16、17作連接。於此,第1、第2真空排氣口34、35,係分別與真空幫浦16、17作連接。The first and second vacuum exhaust ports 34 and 35 are provided in the casing 11, and the first and second vacuum exhaust ports 34 and 35 are connected to the vacuum pumps 16 and 17. Here, the first and second vacuum exhaust ports 34 and 35 are connected to the vacuum pumps 16 and 17, respectively.
在使用真空處理裝置2時,係使真空槽用真空幫浦6和被與第1、第2真空排氣口34、35作了連接之真空幫浦16、17動作,並預先將真空槽18之內部與筐體11之內部作真空排氣。When the vacuum processing apparatus 2 is used, the vacuum pump 6 and the vacuum pumps 16 and 17 connected to the first and second vacuum exhaust ports 34 and 35 are operated, and the vacuum chamber 18 is previously provided. The inside is evacuated to the inside of the casing 11.
在陰極電極21之背面,係被配置有加熱裝置38,一面使加熱裝置38發熱並對陰極電極21作加熱,一面經由電源裝置30來對於陰極電極21施加相對於接地電位之負電壓且對於柵電極22施加與陰極電極21相同之電壓。對於陽極電極23,係施加相對於陰極電極21之正電壓。於此,陽極電極23,係被連接於接地電位。On the back surface of the cathode electrode 21, a heating device 38 is disposed, and while the heating device 38 is heated and the cathode electrode 21 is heated, a negative voltage with respect to the ground potential is applied to the cathode electrode 21 via the power supply device 30 and The electrode 22 applies the same voltage as the cathode electrode 21. For the anode electrode 23, a positive voltage with respect to the cathode electrode 21 is applied. Here, the anode electrode 23 is connected to the ground potential.
在陰極電極21處,係被施加有負的高電壓(例如-40kV),從陰極電極21所放出之熱電子,係經由柵電極22與陽極電極23而被集束為束狀,並經由陽極電極23而被作加速,而通過柵孔25與陽極孔26,並沿著推斥電極24之中心軸線28而前進,而通過推斥電極24內。At the cathode electrode 21, a negative high voltage (for example, -40 kV) is applied, and the hot electrons emitted from the cathode electrode 21 are bundled into a bundle shape via the gate electrode 22 and the anode electrode 23, and are passed through the anode electrode. 23 is accelerated and passes through the gate hole 25 and the anode hole 26 and proceeds along the central axis 28 of the repeller electrode 24 to pass through the repeller electrode 24.
藉由電源裝置30,在推斥電極24處,係相對於陽極電極23而被施加有正電壓,但是,由於束之中心軸係與推斥電極24之中心軸線28相一致,因此,係不會有束的軸對稱性崩潰的情況。By the power supply device 30, a positive voltage is applied to the repeller electrode 24 with respect to the anode electrode 23, but since the central axis of the beam coincides with the central axis 28 of the repeller electrode 24, There will be a case where the axis symmetry of the beam collapses.
若是對於各電極21~24之電位作比較,則係被設為柵電極=陰極電極<陽極電極<推斥電極,於此,陽極電極23係被與接地電位作連接。When the potentials of the electrodes 21 to 24 are compared, the gate electrode = the cathode electrode < the anode electrode < the repeller electrode is used. Here, the anode electrode 23 is connected to the ground potential.
符號31、32、33,係分別為第1集束線圈與第2集束線圈以及搖動線圈,第1集束線圈31,係位置在陽極電極23之一部份的外側處,並將陽極電極23之一部份作包圍地而被作配置。Reference numerals 31, 32, and 33 are a first bundle coil and a second bundle coil and a wobble coil, respectively, and the first bundle coil 31 is located at the outer side of a portion of the anode electrode 23, and one of the anode electrodes 23 is provided. Part of it is surrounded by the configuration.
第2集束線圈32與搖動線圈33,係相較於第1集束線圈31而更位置在電子束之下流側處,並從第1集束線圈31起而依上述順序來以將電子束之軌道作包圍的方式來作配置。推斥電極24,係位置在第1集束線圈31與第2集束線圈32之間。The second cluster coil 32 and the wobble coil 33 are positioned closer to the flow side of the electron beam than the first bundle coil 31, and are driven from the first bundle coil 31 in the above-described order to make the orbit of the electron beam. The way to surround is configured. The repulsion electrode 24 is positioned between the first cluster coil 31 and the second bundle coil 32.
電子束係經由第1、第2集束線圈31、32而被作集束,並從放出口13而被放出,而照射至真空槽18內之對象物上。The electron beam is bundled by the first and second cluster coils 31 and 32, and is discharged from the discharge port 13 to be irradiated onto the object in the vacuum chamber 18.
圖4之符號L1 ,係為代表在推斥電極24處相對於接地電位而施加了300V之正電壓時的電子束之軌道外形的曲線,並確認到:其係成為與並未設置推斥電極24時略相同之形狀。故而,可以得知,被施加有正電壓之推斥電極24,係並不會對於第1、第2集束線圈31、32之電子束集束作用造成不良影響。The symbol L 1 of FIG. 4 is a curve representing the orbital shape of the electron beam when a positive voltage of 300 V is applied to the repeller electrode 24 with respect to the ground potential, and it is confirmed that the system is not replied. The electrodes 24 are slightly identical in shape. Therefore, it can be understood that the repeller electrode 24 to which the positive voltage is applied does not adversely affect the electron beam bundling action of the first and second cluster coils 31 and 32.
此圖4以及後述之圖2、圖3,係僅對於電子鎗10以及推斥電極24之中心軸線28的配置有排氣口之單側作展示。4 and FIG. 3, which will be described later, are shown only on one side of the central axis 28 of the electron gun 10 and the repeller electrode 24, in which the exhaust port is disposed.
另外,若是使搖動線圈33動作,則從放出口13所放出之電子束的前進方向係被作搖動,在對象物處,係能夠以較電子束之剖面積更大的範圍來進行照射。Further, when the swing coil 33 is operated, the traveling direction of the electron beam emitted from the discharge port 13 is shaken, and the object can be irradiated with a larger area than the cross-sectional area of the electron beam.
上述之第1真空排氣口34,係與在筐體11內部之空間中的身為陽極電極23與陰極電極21之間的部分之電子鎗室作連接,並構成為將位於電子鎗室之氣體作真空排氣。The first vacuum exhaust port 34 is connected to an electron gun chamber which is a portion between the anode electrode 23 and the cathode electrode 21 in a space inside the casing 11, and is configured to be a gas located in the electron gun chamber. Vacuum exhaust.
又,第2真空排氣口35,係與在筐體11內部之空間中的身為陽極電極23與放出口13之間的部分並且較第2集束線圈32而更接近陰極21之部分的中間室作連接,並構成為將位於中間室內之氣體作真空排氣。Further, the second vacuum exhaust port 35 is in the middle of the space between the anode electrode 23 and the discharge port 13 in the space inside the casing 11 and is closer to the cathode 21 than the second bundle coil 32. The chamber is connected and configured to evacuate the gas located in the intermediate chamber.
於此,如同上述一般,電子束,係在推斥電極24之中心軸線28上而沿著中心軸線28所延伸之方向前進,第2真空排氣口35係被配置在推斥電極24之外側處。Here, as described above, the electron beam is advanced in the direction in which the central axis 28 extends on the central axis 28 of the repulsion electrode 24, and the second vacuum exhaust port 35 is disposed on the outer side of the repulsion electrode 24. At the office.
推斥電極24,係如圖5(b)中所示一般,為由金屬製之網41所構成,位於中間室處之氣體,係通過網41之網眼42,而被從第2真空排氣口35作真空排氣。The repeller electrode 24 is generally composed of a metal mesh 41 as shown in FIG. 5(b). The gas at the intermediate chamber passes through the mesh 42 of the mesh 41 and is removed from the second vacuum row. The port 35 is evacuated.
另外,在上述之實施例中,雖係設為金屬製之網,但是,亦能夠以使複數根之金屬製的細棒位置在相同之圓筒側面處的方式,來與電子束之前進方向相平行地作等間隔配置,而構成筒狀形狀之推斥電極24。又,亦可將被形成有多數之細孔的導電性之板成形為圓板狀,並作為推斥電極24。又,亦可對於金屬製之中空圓筒的一部份進行細縫加工或者是切缺加工,並設為例如加工為皇冠狀或者是加工為螺旋形狀之推斥電極24。Further, in the above-described embodiment, the metal mesh is used, but the electron beam may be advanced in such a manner that the plurality of metal thin rods are positioned at the same cylindrical side surface. The repeller electrodes 24 are formed in a cylindrical shape at equal intervals in parallel. Further, the conductive plate formed with a plurality of fine holes may be formed into a disk shape and used as the repeller electrode 24. Further, a part of the hollow cylinder made of metal may be subjected to slit processing or slitting processing, and may be, for example, a repeller electrode 24 processed into a crown shape or processed into a spiral shape.
此些之推斥電極24,係能夠使氣體通過細孔、細縫或者是切缺口,通過了的氣體係從第2真空排氣口35而被作真空排氣。The repeller electrode 24 is capable of passing a gas through a fine hole, a slit or a notch, and the passed gas system is evacuated from the second vacuum exhaust port 35.
不論是在任一者之推斥電極24的情況下,當在細縫、切缺口、細孔或者是其他之氣體通過手段的情況時,較理想,係以不會使其對於電子束之軌道造成影響的方式,來設置為當將推斥電極24截斷為與電子束之中心軸線垂直相交的平面時氣體通過手段會以電子束之中心軸線作為中心而成為旋轉對稱。In the case of the repulsion electrode 24 of either one, when it is in the case of a slit, a notch, a pinhole or other gas passage means, it is preferable not to cause it to cause an orbit to the electron beam. The manner of influence is such that when the repulsion electrode 24 is cut into a plane perpendicularly intersecting the central axis of the electron beam, the gas passage means becomes rotationally symmetrical with the central axis of the electron beam as the center.
若是對於推斥電極24之功能作說明,則若是將相對於陽極電極23之正電壓施加在推斥電極24處,則推斥電極24之中心軸線28的位置處之電位,相較於並不存在有推斥電極24之先前技術的電子鎗,係上升至正電壓側。If the function of the repulsion electrode 24 is explained, if a positive voltage with respect to the anode electrode 23 is applied to the repulsion electrode 24, the potential at the position of the central axis 28 of the repulsion electrode 24 is compared with The prior art electron gun in which the repulsion electrode 24 is present is raised to the positive voltage side.
在電子鎗10之筐體11的內部,係經由從第1、第2真空排氣口34、35所進行之真空排氣,而使電子鎗室之壓力成為較中間室之壓力更低,中間室之壓力,相較於較中間室而更接近真空槽18的部分之壓力,係變得更低。The inside of the casing 11 of the electron gun 10 is evacuated by the vacuum from the first and second vacuum exhaust ports 34 and 35, so that the pressure of the electron gun chamber becomes lower than that of the intermediate chamber, and the intermediate chamber is The pressure, which is closer to the portion of the vacuum chamber 18 than the intermediate chamber, becomes lower.
真空槽18之內部或者是筐體11內部之較中間室而更接近真空槽18的部分,係為壓力較高的部分,而多量之殘留氣體係會與電子束作碰撞,殘留氣體係電離,並產生正離子。The inside of the vacuum chamber 18 or the portion of the inner portion of the casing 11 that is closer to the vacuum chamber 18 is a portion having a higher pressure, and a large amount of the residual gas system collides with the electron beam, and the residual gas system is ionized. And produces positive ions.
所產生了的正離子,係集中在電位為低之電子束的中心軸線處,並朝向負電位為更大之陰極電極21側而前進。The positive ions generated are concentrated at the central axis of the electron beam having a low potential, and are advanced toward the side of the cathode electrode 21 having a larger negative potential.
在本發明之電子鎗10中,於推斥電極24處,係被施加有相對於陽極電極23而為正之電壓,推斥電極24之中心軸線28的電位,相較於並不存在有被施加正電壓之推斥電極24時,係更加上升。In the electron gun 10 of the present invention, at the repeller electrode 24, a voltage which is positive with respect to the anode electrode 23 and a potential of the central axis 28 of the repulsion electrode 24 are applied, and there is no positive application. When the voltage replies the electrode 24, it rises more.
特別是,在本發明中,就算是當從陰極電極21所放出之電子束在推斥電極24之中心軸線28上而前進時,亦係對於推斥電極24,而施加有會使推斥電極24之中心軸線28上的電位在推斥電極24內部而成為最大之電壓。In particular, in the present invention, even when the electron beam emitted from the cathode electrode 21 is advanced on the central axis 28 of the repulsion electrode 24, the repulsion electrode is applied to the repulsion electrode 24, and the repulsion electrode is applied. The potential on the central axis 28 of 24 is at the maximum voltage within the repulsion electrode 24.
故而,在放出口13與推斥電極24之間,係形成有推斥電極24側之電位成為較放出口13側之電位而更高一般的電場,在真空槽18內部或者是較推斥電極24而更接近放出口13之空間內所產生了的正離子,係經由該電場而被推回,並成為不會有超越推斥電極24所形成之電場而侵入至陰極電極21側的情況。Therefore, between the discharge port 13 and the repeller electrode 24, the potential on the side of the repulsion electrode 24 is formed to be higher than the potential on the discharge port 13 side, and a higher electric field is formed inside the vacuum chamber 18 or the repulsion electrode. The positive ions generated in the space closer to the discharge port 13 are pushed back by the electric field, and the electric field formed by the repulsion electrode 24 does not enter the cathode electrode 21 side.
圖3,係為對於當從圖1之構造的電子鎗之陰極電極21而將電子束作了照射時之位在電子鎗10之內部的正離子之舉動作了模擬之結果,並將被拉扯向陰極電極21而入射至陰極電極21處之正離子所位置的範圍藉由附加有符號A之一點鍊線來作包圍展示。Figure 3 is a simulation result of a positive ion action inside the electron gun 10 when the electron beam is irradiated from the cathode electrode 21 of the electron gun constructed in Fig. 1, and will be pulled toward the cathode. The range in which the electrode 21 is incident on the positive electrode at the cathode electrode 21 is surrounded by a dot line attached to the symbol A.
又,將就算是照射電子束亦不會到達陰極電極21處之正離子所位置的範圍藉由附加有符號B之一點鍊線來作包圍展示。Further, the range of the position where the positive ions at the cathode electrode 21 are not irradiated even if the electron beam is irradiated is surrounded by a dot line of a symbol B.
電子鎗室與中間室,係分別從第1、第2真空排氣口34、35而被作了真空排氣,電子鎗室係被設為1×10-4 Pa以下之壓力,中間室係被設為1×10-3 Pa以下之壓力,而實際上係幾乎不會產生正離子,入射至陰極電極21處之正離子係為微少。The electron gun chamber and the intermediate chamber are vacuum-exhausted from the first and second vacuum exhaust ports 34 and 35, respectively, and the electron gun chamber is set to a pressure of 1 × 10 -4 Pa or less, and the intermediate chamber is set. The pressure is 1 × 10 -3 Pa or less, and practically, positive ions are hardly generated, and the positive ions incident on the cathode electrode 21 are minute.
模擬之條件,係成為:推斥電極24之電位係為+300V,柵電極22之電位係為-40kV,陰極電極21之電位係為-40kV,陽極電極23係為0V(接地電位),電子束電流係為6A。作為離子初速,係賦予了1000K之隨機的熱速度。The conditions for the simulation are such that the potential of the repulsion electrode 24 is +300 V, the potential of the gate electrode 22 is -40 kV, the potential of the cathode electrode 21 is -40 kV, and the anode electrode 23 is 0 V (ground potential), and electrons. The beam current is 6A. As the initial velocity of the ions, a random thermal velocity of 1000 K was imparted.
在此條件下,可以得知,位置在相較於推斥電極24而更靠放出口13側處之正離子,係並不會移動至陰極電極21側,在真空槽18內或者是接近於真空槽18之空間中所多量產生了的正離子,係並不會入射至陰極電極21處。Under this condition, it can be known that the positive ions located at the side closer to the discharge port 13 than the repeller electrode 24 do not move to the side of the cathode electrode 21, or are close to or within the vacuum chamber 18. A large amount of positive ions generated in the space of the vacuum chamber 18 are not incident on the cathode electrode 21.
圖2,係為從圖1之構造的電子鎗10而將推斥電極24除去了的電子鎗之模擬結果,且為除了並不存在有被施加正電壓之推斥電極24以外,與圖1之電子鎗10為相同構造之電子鎗的模擬結果。2 is a simulation result of the electron gun in which the repeller electrode 24 is removed from the electron gun 10 of the configuration of FIG. 1, and is an electron gun of FIG. 1 except that the repeller electrode 24 to which a positive voltage is not applied is present. 10 is the simulation result of the electron gun of the same construction.
在相較於推斥電極24所位置之部分而更接近放出口13之位置處的正離子(符號A之範圍),係入射至陰極電極21中,由於此位置之殘留氣體的壓力係為高,因此,係入射有大量產生之正離子,故而,可以得知,陰極電極21係會快速的損傷。The positive ion (the range of the symbol A) at a position closer to the discharge port 13 than the portion where the repulsion electrode 24 is located is incident on the cathode electrode 21, and the pressure of the residual gas at this position is high. Therefore, since a large amount of generated positive ions are incident, it can be known that the cathode electrode 21 is rapidly damaged.
另外,在上述實施例中,雖係針對將本發明之真空處理裝置設為蒸鍍裝置的情況而作了說明,但是,本發明係並不被限定於蒸鍍裝置,而亦包含有其他的真空處理裝置。Further, in the above embodiments, the vacuum processing apparatus of the present invention has been described as a vapor deposition apparatus. However, the present invention is not limited to the vapor deposition apparatus, and includes other Vacuum processing unit.
又,在上述實施例中,推斥電極24,雖然係將內周與外周均設為了圓筒狀,但是,只要內周面為圓筒狀,則外周面就算並非為圓筒亦無妨。Further, in the above-described embodiment, the repulsion electrode 24 has a cylindrical shape both in the inner circumference and the outer circumference. However, if the inner circumferential surface is cylindrical, the outer circumferential surface may not be a cylinder.
推斥電極之剖面形狀,係如同上述實施例一般,以不會對於電子束之軌道造成影響的圓形為理想,但是,亦可考慮到裝置構成上之限制或者是製造成本,而設為像是雷諾三角形(Reuleaux triangle)或者是外擺線圓(繭型)一般之將多角形和圓弧作了組合的形狀。The cross-sectional shape of the repulsion electrode is generally circular as in the above embodiment, and is preferably a circular shape that does not affect the orbit of the electron beam. However, it may be considered as a limitation on the configuration of the device or a manufacturing cost. It is a Reuleaux triangle or an epicycloid circle (茧) that generally combines a polygon and an arc.
又,亦包含有內周面能夠和圓筒形狀之側面相密著的螺旋形狀之推斥電極,且亦可將相互被作了電性連接之複數的圓形環相互平行地並使中心位置在相同之中心軸線上地來構成推斥電極。Further, a repeller electrode having a spiral shape in which the inner peripheral surface can be closely attached to the side surface of the cylindrical shape is included, and a plurality of circular rings electrically connected to each other may be parallel to each other and centered. The repeller electrodes are formed on the same central axis.
又,亦可將相互被作了電性連接的棒狀之電極在1個圓的圓周上相互平行地並與圓柱成直角地而作設置,來構成推斥電極。Further, the rod-shaped electrodes electrically connected to each other may be disposed parallel to each other on the circumference of one circle and at right angles to the cylinder to constitute a repulsion electrode.
也就是說,上述實施例之推斥電極24,係被構成為使內周面位置在同一之筒形狀的側面處之推斥電極的其中一例。That is, the repeller electrode 24 of the above-described embodiment is configured as an example of a repeller electrode in which the inner peripheral surface is positioned at the side surface of the same cylindrical shape.
又,並不被限定於圓筒,而亦可為內周面之其中一方的開口為較另外一方的開口而更廣的圓錐台形狀之推斥電極。Further, it is not limited to the cylinder, and the repeller electrode having a truncated cone shape in which one of the inner circumferential surfaces is wider than the other opening may be used.
2...真空處理裝置2. . . Vacuum processing unit
3...基板3. . . Substrate
4...蒸鍍材料4. . . Evaporating material
5...基板支持器5. . . Substrate holder
6...真空槽用真空幫浦6. . . Vacuum pump for vacuum tank
10...電子鎗10. . . Electron gun
11...筐體11. . . Casing
12...底面12. . . Bottom
13...放出口13. . . Export
16、17...真空幫浦16, 17. . . Vacuum pump
18...真空槽18. . . Vacuum tank
21...陰極電極twenty one. . . Cathode electrode
22...柵電極twenty two. . . Gate electrode
23...陽極電極twenty three. . . Anode electrode
24...推斥電極twenty four. . . Repulsion electrode
25...柵孔25. . . Gate hole
26...陽極孔26. . . Anode hole
28...中心軸線28. . . Central axis
31...第1集束線圈31. . . First bundle coil
32...第2集束線圈32. . . Second bundle coil
33...搖動線圈33. . . Shake coil
34...第1真空排氣口34. . . First vacuum vent
35...第2真空排氣口35. . . Second vacuum vent
[圖1]用以對於本發明之電子鎗作說明的圖。Fig. 1 is a view for explaining an electron gun of the present invention.
[圖2]用以對於將推斥電極去除時之電子鎗內部的正離子之舉動作說明的圖。Fig. 2 is a view for explaining an action of positive ions inside the electron gun when the repulsion electrode is removed.
[圖3]用以對於本發明之其中一例的電子鎗內部的正離子之舉動作說明的圖。Fig. 3 is a view for explaining an operation of a positive ion inside an electron gun as an example of the present invention.
[圖4]用以對於本發明之其中一例之電子鎗的電子束之軌道外形作說明的圖。Fig. 4 is a view for explaining an orbital shape of an electron beam of an electron gun of an example of the present invention.
[圖5](a):用以對於本發明之其中一例的真空處理裝置作說明之圖,(b):用以對於藉由導電性之網所形成的推斥電極作說明之圖。Fig. 5 (a) is a view for explaining a vacuum processing apparatus of one example of the present invention, and Fig. 5 (b) is a view for explaining a repeller electrode formed by a conductive mesh.
10...電子鎗10. . . Electron gun
11...筐體11. . . Casing
12...底面12. . . Bottom
13...放出口13. . . Export
16、17...真空幫浦16, 17. . . Vacuum pump
18...真空槽18. . . Vacuum tank
21...陰極電極twenty one. . . Cathode electrode
22...柵電極twenty two. . . Gate electrode
23...陽極電極twenty three. . . Anode electrode
24...推斥電極twenty four. . . Repulsion electrode
25...柵孔25. . . Gate hole
26...陽極孔26. . . Anode hole
28...中心軸線28. . . Central axis
30...電源裝置30. . . Power supply unit
31...第1集束線圈31. . . First bundle coil
32...第2集束線圈32. . . Second bundle coil
33...搖動線圈33. . . Shake coil
34...第1真空排氣口34. . . First vacuum vent
35...第2真空排氣口35. . . Second vacuum vent
38...加熱裝置38. . . heating equipment
Claims (7)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009216506 | 2009-09-18 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201130008A TW201130008A (en) | 2011-09-01 |
| TWI476805B true TWI476805B (en) | 2015-03-11 |
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ID=43758687
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099131461A TWI476805B (en) | 2009-09-18 | 2010-09-16 | Electron gun and the vacuum evacuation apparatus |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP5186599B2 (en) |
| CN (1) | CN102484024B (en) |
| TW (1) | TWI476805B (en) |
| WO (1) | WO2011034086A1 (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6779847B2 (en) * | 2017-09-11 | 2020-11-04 | 株式会社ニューフレアテクノロジー | Charged particle device, charged particle drawing device and charged particle beam control method |
| JP6466020B1 (en) | 2018-10-16 | 2019-02-06 | 株式会社Photo electron Soul | Electron gun, electron beam application apparatus, electron emission method using electron gun, and electron beam focal position adjustment method |
| CN110196362B (en) * | 2019-05-05 | 2022-10-04 | 中国科学院电子学研究所 | System and method for testing emission performance of electron gun |
| JP7269107B2 (en) * | 2019-06-12 | 2023-05-08 | 日清紡マイクロデバイス株式会社 | electron gun |
| JP7018418B2 (en) | 2019-10-07 | 2022-02-10 | 日本電子株式会社 | Electron gun, electron microscope, three-dimensional laminated modeling device, and current adjustment method for electron gun |
| US10923307B1 (en) * | 2020-04-13 | 2021-02-16 | Hamamatsu Photonics K.K. | Electron beam generator |
| JP6762635B1 (en) * | 2020-04-16 | 2020-09-30 | 株式会社Photo electron Soul | Electron gun, electron beam application device, and electron beam emission method |
| JP7573457B2 (en) * | 2021-02-25 | 2024-10-25 | 株式会社ニューフレアテクノロジー | Cathode mechanism of electron gun, electron gun, and electron beam writing device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6386339A (en) * | 1986-09-29 | 1988-04-16 | イメイトロン インコ−ポレ−テツド | Ion removing electrode |
| JPS63133439A (en) * | 1986-11-22 | 1988-06-06 | Ulvac Corp | Space charge neutralizing type electron gun |
| TW262562B (en) * | 1994-03-08 | 1995-11-11 | Hitachi Seisakusyo Kk | |
| TW522429B (en) * | 1999-12-17 | 2003-03-01 | Hitachi Ltd | Color cathode ray tube having an improved electron gun electrode |
| CN1925099A (en) * | 2005-08-31 | 2007-03-07 | 浜松光子学株式会社 | X-ray tube |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5784655U (en) * | 1980-11-14 | 1982-05-25 | ||
| CN1021390C (en) * | 1985-04-01 | 1993-06-23 | 株式会社岛津制作所 | Glow discharge tube for analysis |
| JPH07249391A (en) * | 1994-03-09 | 1995-09-26 | Fujitsu Ltd | Electron beam equipment |
| EP0782174A1 (en) * | 1995-12-26 | 1997-07-02 | Nihon Shinku Gijutsu Kabushiki Kaisha | Sputter ion pump |
-
2010
- 2010-09-15 JP JP2011531943A patent/JP5186599B2/en active Active
- 2010-09-15 WO PCT/JP2010/065931 patent/WO2011034086A1/en not_active Ceased
- 2010-09-15 CN CN201080041421.9A patent/CN102484024B/en active Active
- 2010-09-16 TW TW099131461A patent/TWI476805B/en active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6386339A (en) * | 1986-09-29 | 1988-04-16 | イメイトロン インコ−ポレ−テツド | Ion removing electrode |
| JPS63133439A (en) * | 1986-11-22 | 1988-06-06 | Ulvac Corp | Space charge neutralizing type electron gun |
| JPH077648B2 (en) * | 1986-11-22 | 1995-01-30 | 日本真空技術株式会社 | Space charge neutralization electron gun |
| TW262562B (en) * | 1994-03-08 | 1995-11-11 | Hitachi Seisakusyo Kk | |
| TW522429B (en) * | 1999-12-17 | 2003-03-01 | Hitachi Ltd | Color cathode ray tube having an improved electron gun electrode |
| CN1925099A (en) * | 2005-08-31 | 2007-03-07 | 浜松光子学株式会社 | X-ray tube |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102484024A (en) | 2012-05-30 |
| CN102484024B (en) | 2015-08-12 |
| JP5186599B2 (en) | 2013-04-17 |
| WO2011034086A1 (en) | 2011-03-24 |
| JPWO2011034086A1 (en) | 2013-02-14 |
| TW201130008A (en) | 2011-09-01 |
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