TWI476038B - Purifying method and purifying apparatus for argon gas - Google Patents
Purifying method and purifying apparatus for argon gas Download PDFInfo
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 title claims description 240
- 229910052786 argon Inorganic materials 0.000 title claims description 120
- 239000007789 gas Substances 0.000 title claims description 117
- 238000000034 method Methods 0.000 title claims description 25
- 238000001179 sorption measurement Methods 0.000 claims description 152
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 98
- 229910052760 oxygen Inorganic materials 0.000 claims description 98
- 239000001301 oxygen Substances 0.000 claims description 98
- 239000001257 hydrogen Substances 0.000 claims description 96
- 229910052739 hydrogen Inorganic materials 0.000 claims description 96
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 77
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims description 76
- 229910002091 carbon monoxide Inorganic materials 0.000 claims description 73
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 52
- 239000012535 impurity Substances 0.000 claims description 45
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 42
- 239000003463 adsorbent Substances 0.000 claims description 27
- 239000003054 catalyst Substances 0.000 claims description 27
- 239000001569 carbon dioxide Substances 0.000 claims description 26
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 26
- 229910052757 nitrogen Inorganic materials 0.000 claims description 21
- 150000002431 hydrogen Chemical class 0.000 claims description 20
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 20
- 229910001868 water Inorganic materials 0.000 claims description 20
- 238000006243 chemical reaction Methods 0.000 claims description 18
- VUZPPFZMUPKLLV-UHFFFAOYSA-N methane;hydrate Chemical compound C.O VUZPPFZMUPKLLV-UHFFFAOYSA-N 0.000 claims description 17
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 14
- 229910052697 platinum Inorganic materials 0.000 claims description 7
- 239000007809 chemical reaction catalyst Substances 0.000 claims 1
- 238000004140 cleaning Methods 0.000 description 23
- 239000003507 refrigerant Substances 0.000 description 20
- 238000001816 cooling Methods 0.000 description 14
- 238000000746 purification Methods 0.000 description 13
- 238000003795 desorption Methods 0.000 description 10
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 8
- 238000002485 combustion reaction Methods 0.000 description 8
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 6
- 229910021536 Zeolite Inorganic materials 0.000 description 6
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 6
- 239000010457 zeolite Substances 0.000 description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 229910052763 palladium Inorganic materials 0.000 description 4
- 229910002090 carbon oxide Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 230000000717 retained effect Effects 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910001260 Pt alloy Inorganic materials 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- OKTJSMMVPCPJKN-YPZZEJLDSA-N carbon-10 atom Chemical compound [10C] OKTJSMMVPCPJKN-YPZZEJLDSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 230000003584 silencer Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000009628 steelmaking Methods 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 238000009849 vacuum degassing Methods 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/02—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by adsorption, e.g. preparative gas chromatography
- B01D53/04—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by adsorption, e.g. preparative gas chromatography with stationary adsorbents
- B01D53/047—Pressure swing adsorption
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B23/00—Noble gases; Compounds thereof
- C01B23/001—Purification or separation processes of noble gases
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/50—Carbon dioxide
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B5/00—Water
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D2255/00—Catalysts
- B01D2255/10—Noble metals or compounds thereof
- B01D2255/102—Platinum group metals
- B01D2255/1021—Platinum
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02A—TECHNOLOGIES FOR ADAPTATION TO CLIMATE CHANGE
- Y02A50/00—TECHNOLOGIES FOR ADAPTATION TO CLIMATE CHANGE in human health protection, e.g. against extreme weather
- Y02A50/20—Air quality improvement or preservation, e.g. vehicle emission control or emission reduction by using catalytic converters
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Separation Of Gases By Adsorption (AREA)
- Catalysts (AREA)
Description
本發明係關於一種對作為雜質至少含有氧、氫、一氧化碳、及氮之氬氣進行純化之方法及裝置。The present invention relates to a method and apparatus for purifying argon containing at least oxygen, hydrogen, carbon monoxide, and nitrogen as impurities.
例如,於如矽單晶提拉爐、陶瓷燒結爐、製鋼用真空脫氣設備、太陽電池用矽電漿溶解裝置、多晶矽鑄造爐之設備中,氬氣用作爐內環境氣體等。為了再利用而自此種設備回收之氬氣因氫、一氧化碳、空氣等之混入而導致純度降低。因此,為了提高所回收之氬氣之純度,使所混入之雜質吸附於吸附劑。進而,為了高效地對此種雜質進行吸附,提出使雜質中之氧與可燃成分進行反應,作為吸附處理之前處理(參照專利文獻1、2)。For example, in a device such as a ruthenium single crystal pulling furnace, a ceramic sintering furnace, a vacuum degassing apparatus for steelmaking, a tantalum plasma dissolution apparatus for a solar cell, and a polycrystalline tantalum casting furnace, argon gas is used as an ambient gas in a furnace. The argon gas recovered from such equipment for reuse is reduced in purity due to the incorporation of hydrogen, carbon monoxide, air, and the like. Therefore, in order to increase the purity of the recovered argon gas, the mixed impurities are adsorbed to the adsorbent. Further, in order to efficiently adsorb the impurities, it is proposed to react the oxygen in the impurities with the combustible component and treat it as a pretreatment treatment (see Patent Documents 1 and 2).
於專利文獻1所揭示之方法中,調節氬氣中之氧之量,使其稍微小於為了使氫、一氧化碳等可燃成分完全燃燒而必需之化學計量,其次,將使氫與氧之反應優先於一氧化碳與氧之反應的鈀或金作為觸媒,使氬氣中之氧與一氧化碳、氫等進行反應,藉此以殘留一氧化碳之狀態生成二氧化碳及水,接著,使氬氣中所含之二氧化碳及水在常溫下吸附於吸附劑,此後,使氬氣中所含之一氧化碳及氮在-10℃~-50℃之溫度下吸附於吸附劑。In the method disclosed in Patent Document 1, the amount of oxygen in the argon gas is adjusted to be slightly smaller than the stoichiometric amount necessary for completely combusting combustible components such as hydrogen and carbon monoxide, and secondly, the reaction of hydrogen with oxygen is prioritized over Palladium or gold which reacts with carbon monoxide and oxygen acts as a catalyst to react oxygen in argon with carbon monoxide, hydrogen, etc., thereby generating carbon dioxide and water in a state of residual carbon monoxide, and then carbon dioxide contained in argon gas and The water is adsorbed to the adsorbent at a normal temperature, and thereafter, one of the carbon oxides and nitrogen contained in the argon gas is adsorbed to the adsorbent at a temperature of -10 ° C to -50 ° C.
於專利文獻2所揭示之方法中,將氬氣中之氧之量設為足以使氫、一氧化碳等可燃成分完全燃燒之量,其次,使用鈀系之觸媒使氬氣中之氧與一氧化碳、氫等進行反應,藉此以殘留氧之狀態生成二氧化碳及水,接著,使氬氣中所含之二氧化碳及水在常溫下吸附於吸附劑,此後,使氬氣中所含之氧及氮在-170℃左右之溫度下吸附於吸附劑。In the method disclosed in Patent Document 2, the amount of oxygen in the argon gas is set to an amount sufficient to completely burn the combustible components such as hydrogen and carbon monoxide, and secondly, the oxygen in the argon gas and carbon monoxide are used using a palladium-based catalyst. Hydrogen or the like is reacted to generate carbon dioxide and water in a state of residual oxygen, and then carbon dioxide and water contained in the argon gas are adsorbed to the adsorbent at normal temperature, and thereafter, oxygen and nitrogen contained in the argon gas are Adsorbed to the adsorbent at a temperature of about -170 °C.
專利文獻1:日本專利第3496079號公報Patent Document 1: Japanese Patent No. 3496079
專利文獻2:日本專利第3737900號公報Patent Document 2: Japanese Patent No. 3737900
於專利文獻1所記載之方法中,使氬氣中之氧之量少於為了使氫、一氧化碳等完全燃燒而必需之化學計量,且使用使氫與氧之反應優先於一氧化碳與氧之反應之觸媒。因此,藉由該反應可實現氫之完全燃燒,並且使未反應之一氧化碳積極地殘留。然而,微量之氫難以藉由吸附處理而去除,但於氬氣之用途中,容許氫之殘留之情形較多。另一方面,一氧化碳成為觸媒毒,並且與二氧化碳相比更難藉由沸石等普通之吸附劑吸附。即,於吸附處理之前段階中,可實現即便殘留問題亦較少之氫之完全燃燒,另一方面,進行如下不合理之處理,即,使存在降低觸媒之功能之虞且吸附較困難之一氧化碳積極地殘留。In the method described in Patent Document 1, the amount of oxygen in the argon gas is made smaller than the stoichiometric amount necessary for completely burning hydrogen, carbon monoxide or the like, and the reaction of hydrogen and oxygen is used in preference to the reaction of carbon monoxide with oxygen. catalyst. Therefore, complete combustion of hydrogen can be achieved by the reaction, and unreacted carbon monoxide is actively retained. However, a trace amount of hydrogen is difficult to remove by adsorption treatment, but in the use of argon gas, the residual of hydrogen is often allowed. On the other hand, carbon monoxide becomes catalytically toxic and is more difficult to adsorb by ordinary adsorbents such as zeolite than carbon dioxide. That is, in the stage before the adsorption treatment, complete combustion of hydrogen which is less than a residual problem can be achieved, and on the other hand, the following unreasonable treatment is performed, that is, the function of reducing the catalyst is lowered and the adsorption is difficult. Carbon monoxide actively remains.
於專利文獻2所記載之方法中,將氬氣中之氧之量設為足以使氫、一氧化碳等完全燃燒之量,且使用鈀系之觸媒使氬氣中之氧與一氧化碳、氫等進行反應。因此,藉由該反應可實現氫、一氧化碳等之完全燃燒,並且於氬氣之用途中殘留成為問題之情形較多之氧積極地殘留。然而,如上所述般於氬氣之用途中,容許氫之殘留之情形較多。另一方面,為了吸附氧,需要將吸附時之溫度降至-170℃左右。即,於吸附處理之前段階的反應,實現即便殘留問題亦較少之氫之完全燃燒,另一方面,進行如下不合理之處理,即,使藉由吸附處理時之冷卻能量之增大而導致純化負擔變大之氧積極地殘留。In the method described in Patent Document 2, the amount of oxygen in the argon gas is set to an amount sufficient to completely burn hydrogen, carbon monoxide, or the like, and the oxygen in the argon gas, carbon monoxide, hydrogen, or the like is performed using a palladium-based catalyst. reaction. Therefore, complete combustion of hydrogen, carbon monoxide or the like can be achieved by the reaction, and oxygen which is often a problem in the use of argon gas remains actively. However, as described above, in the use of argon gas, the residual of hydrogen is allowed to be large. On the other hand, in order to adsorb oxygen, it is necessary to lower the temperature at the time of adsorption to about -170 °C. That is, the reaction of the stage before the adsorption treatment realizes complete combustion of hydrogen which is less than the residual problem, and on the other hand, the following unreasonable treatment, that is, the increase of the cooling energy by the adsorption treatment is caused. Oxygen which has a large purification burden remains actively.
根據如上所述之不合理之先前技術,存在氬氣之回收設備之管理費用或建設費用增大之問題。本發明之目的在於提供一種可解決此種先前技術之問題之氬氣之純化方法及純化裝置。According to the unreasonable prior art as described above, there is a problem that the management cost or the construction cost of the argon recovery apparatus increases. It is an object of the present invention to provide a method and a purification apparatus for purifying argon gas which can solve the problems of the prior art.
本發明方法之特徵在於,其係對作為雜質至少含有氧、氫、一氧化碳、及氮之氬氣進行純化者,且將上述氬氣中之氧莫耳濃度設定成小於一氧化碳莫耳濃度與氫莫耳濃度之和的1/2,其次,使用使一氧化碳與氧之反應優先於氫與氧之反應之觸媒,使上述氬氣中之氧與一氧化碳及氫進行反應,藉此以殘留氫之狀態生成二氧化碳及水,此後,使用吸附劑降低上述氬氣中之雜質之含有率。The method of the present invention is characterized in that it purifies an argon gas containing at least oxygen, hydrogen, carbon monoxide, and nitrogen as impurities, and sets the oxygen molar concentration in the argon gas to be less than the concentration of carbon monoxide and hydrogen. 1/2 of the sum of the ear concentrations, and secondly, using a catalyst that reacts carbon monoxide with oxygen in preference to the reaction of hydrogen and oxygen, the oxygen in the argon gas is reacted with carbon monoxide and hydrogen, thereby leaving a state of residual hydrogen. Carbon dioxide and water are generated, and thereafter, an adsorbent is used to reduce the content of impurities in the above argon gas.
根據本發明,將氬氣中之氧莫耳濃度設定成小於一氧化碳莫耳濃度與氫莫耳濃度之和的1/2,並使用使一氧化碳與氧之反應優先於氫與氧之反應之觸媒,使氬氣中之氧與一氧化碳、氫進行反應。藉此,使即便殘留問題亦較少之氫積極地殘留,且於吸附去除之情形時,可實現使冷卻能量增大之氧之完全燃燒,進而,亦無需使存在降低觸媒功能之虞且較二氧化碳吸附更困難之一氧化碳積極地殘留。藉此,使純化設備之管理變得容易,並且可實現小型化,從而可降低能量消耗。According to the present invention, the oxygen molar concentration in the argon gas is set to be less than 1/2 of the sum of the carbon monoxide molar concentration and the hydrogen molar concentration, and a catalyst for reacting carbon monoxide with oxygen is preferred over the reaction of hydrogen with oxygen. The oxygen in argon is reacted with carbon monoxide and hydrogen. Thereby, hydrogen which is less likely to remain in the residual state is actively retained, and in the case of adsorption removal, complete combustion of oxygen which increases the cooling energy can be achieved, and further, there is no need to reduce the catalyst function. Carbon monoxide is more difficult to adsorb than carbon dioxide. Thereby, the management of the purification apparatus is facilitated, and miniaturization can be achieved, thereby reducing energy consumption.
於本發明方法中,為了使一氧化碳與氧之反應優先於氫與氧之反應,上述觸媒較佳為包含鉑作為主成分。於本發明方法中,為了高效地進行二氧化碳、水、及氮之吸附,較佳為,於使用吸附劑降低上述氬氣中之雜質之含有率時,在藉由常溫下之變壓式吸附法吸附該雜質中之至少二氧化碳及水後,藉由-10℃~-50℃下之變溫式吸附法吸附雜質中之至少氮。In the method of the present invention, in order to make the reaction of carbon monoxide and oxygen preferentially react with hydrogen and oxygen, the above catalyst preferably contains platinum as a main component. In the method of the present invention, in order to efficiently carry out the adsorption of carbon dioxide, water, and nitrogen, it is preferred to use a pressure-sensitive adsorption method at normal temperature when the content of impurities in the argon gas is lowered by using an adsorbent. After adsorbing at least carbon dioxide and water in the impurities, at least nitrogen in the impurities is adsorbed by a temperature swing adsorption method at -10 ° C to -50 ° C.
於本發明方法中,較佳為,將上述氬氣中之氧莫耳濃度設定成超過一氧化碳莫耳濃度之1/2之值。In the method of the present invention, it is preferred to set the oxygen molar concentration in the argon gas to a value exceeding 1/2 of the carbon monoxide molar concentration.
藉此,可實現存在降低觸媒之功能之虞之一氧化碳之完全燃燒。於該情形時,較佳為,於設定上述氬氣中之氧莫耳濃度時,在氧莫耳濃度為一氧化碳莫耳濃度與氫莫耳濃度之和的1/2以上之情形時添加氫,在氧莫耳濃度為一氧化碳莫耳濃度之1/2以下之情形時添加氧。藉此,由於在設定氧莫耳濃度時未添加一氧化碳,故而可防止一氧化碳與水之反應副生成物降低氬氣之純度。Thereby, it is possible to achieve complete combustion of one of the carbon oxides with the function of reducing the catalyst. In this case, it is preferable to add hydrogen when the oxygen molar concentration in the argon gas is set to be 1/2 or more of the sum of the carbon monoxide molar concentration and the hydrogen molar concentration. Oxygen is added when the oxygen molar concentration is less than or equal to 1/2 of the carbon monoxide molar concentration. Thereby, since carbon monoxide is not added when the oxygen molar concentration is set, the reaction product of carbon monoxide and water can be prevented from lowering the purity of the argon gas.
本發明裝置之特徵在於,其係對作為雜質至少含有氧、氫、一氧化碳、及氮之氬氣進行純化者,且包含:反應器,其被導入有上述氬氣;濃度調節裝置,其將導入於上述反應器內之上述氬氣中之氧莫耳濃度設定成小於一氧化碳莫耳濃度與氫莫耳濃度之和的1/2;及吸附裝置,其連接於上述反應器;使一氧化碳與氧之反應優先於氫與氧之反應之觸媒填充於上述反應器內,以使得藉由於上述反應器內上述氬氣中之氧與一氧化碳及氫進行反應,而以殘留氫之狀態生成二氧化碳及水,上述吸附裝置包含吸附劑,其用以降低自上述反應器流出之上述氬氣中的雜質之含有率。The apparatus of the present invention is characterized in that it purifies argon gas containing at least oxygen, hydrogen, carbon monoxide, and nitrogen as impurities, and includes a reactor into which the argon gas is introduced, and a concentration adjusting device which is introduced The oxygen molar concentration in the argon gas in the reactor is set to be less than 1/2 of the sum of the carbon monoxide molar concentration and the hydrogen molar concentration; and an adsorption device connected to the reactor; carbon monoxide and oxygen The catalyst having a reaction preferentially reacting with hydrogen and oxygen is filled in the reactor so that carbon dioxide and water are generated in a state of residual hydrogen by reacting oxygen in the argon gas in the reactor with carbon monoxide and hydrogen. The adsorption device includes an adsorbent for reducing the content of impurities in the argon gas flowing out of the reactor.
根據本發明裝置,可實施本發明方法。The method of the invention can be carried out in accordance with the apparatus of the invention.
根據本發明,可提供一種利用合理之純化處理提高所回收之含雜質氬氣之純度,藉此防止純化用觸媒之功能降低,減輕純化負擔,且有助於降低回收設備之管理費用、建設費用之方法及裝置。According to the present invention, it is possible to provide a purity purification process for improving the purity of the recovered impurity-containing argon gas, thereby preventing the function of the purification catalyst from being reduced, reducing the purification burden, and contributing to reducing the management cost and construction of the recovery equipment. Method and device for the fee.
圖1所示之氬氣之純化裝置α係以可將自如例如多晶矽鑄造爐之氬氣供給源1供給之經使用過之氯氣回收並再利用之方式進行純化者,且包含加熱器2、反應器3、濃度調節裝置4、冷卻器5、及吸附裝置6。The argon purifying apparatus α shown in Fig. 1 is purified by recovering and recycling the used chlorine gas supplied from an argon gas supply source 1 such as a polycrystalline germanium casting furnace, and includes a heater 2 and a reaction. The device 3, the concentration adjusting device 4, the cooler 5, and the adsorption device 6.
自供給源α供給之氯氣係藉由圖外之過濾器等而除塵,從而作為氣體輸送步驟經由鼓風機7導入至加熱器2。純化對象之氬氣中所含之雜質至少為氧、氫、一氧化碳、及氮,但亦可含有二氧化碳或烴等其他雜質。純化之氬氣中之雜質之濃度並無特別限定,可設為例如5莫耳ppm~40000莫耳ppm左右。就加熱器2之氬氣之加熱溫度而言,就防止在反應器3內一氧化碳吸附於觸媒之活性點而阻礙氫與氧之反應之觀點而言,較佳設為200℃以上,就防止觸媒之壽命縮短之觀點而言,較佳設為300℃以下。The chlorine gas supplied from the supply source α is dedusted by a filter or the like outside the drawing, and is introduced into the heater 2 via the air blower 7 as a gas transport step. The impurities contained in the argon gas to be purified are at least oxygen, hydrogen, carbon monoxide, and nitrogen, but may contain other impurities such as carbon dioxide or hydrocarbons. The concentration of the impurities in the purified argon gas is not particularly limited, and may be, for example, about 5 mol ppm to 40000 mol ppm. With respect to the heating temperature of the argon gas of the heater 2, it is preferable to prevent the carbon monoxide from adsorbing to the active site of the catalyst in the reactor 3 and hinder the reaction between hydrogen and oxygen, preferably at 200 ° C or higher. From the viewpoint of shortening the life of the catalyst, it is preferably set to 300 ° C or lower.
經加熱器2加熱之氬氣被導入至反應器3。濃度調節裝置4係將經由加熱器2導入至反應器3之氬氣中之氧莫耳濃度設定成小於一氧化碳莫耳濃度與氫莫耳濃度之和的1/2。本實施形態之濃度調節裝置4具有濃度測定器4a、氫供給源4b、氫量調整器4c、氧供給源4d、氧量調節器4e、及控制器4f。濃度測定器4a係測定導入至加熱器2之氬氣中之氧莫耳濃度、一氧化碳莫耳濃度、氫莫耳濃度,並將該測定信號傳送至控制器4f。控制器4f係於測定出之氧莫耳濃度為一氧化碳莫耳濃度與氫莫耳濃度之和的1/2以上之情形時,將與為了成為小於1/2而必需之氫量對應之控制信號傳送至氫量調整器4c,於所測定之氧莫耳濃度為一氧化碳莫耳濃度之1/2以下之情形時,將與為了超過1/2而必需之氧量對應之控制信號傳送至氧量調節器4e。氫量調整器4c係將自氫供給源4b至反應器3之流路,以供給對應於控制信號之量的氫之方式進行開度調整。氧量調節器4e係將自氧供給源4d至反應器3之流路,以供給對應於控制信號之量的氧之方式進行開度調整。藉此,於設定純化對象之氬氣中之氧莫耳濃度時,在氧莫耳濃度為一氧化碳莫耳濃度與氫莫耳濃度之和的1/2以上之情形時添加氫,在氧莫耳濃度為一氧化碳莫耳濃度之1/2以下之情形時添加氧。Argon gas heated by the heater 2 is introduced into the reactor 3. The concentration adjusting device 4 sets the oxygen molar concentration in the argon gas introduced into the reactor 3 via the heater 2 to be less than 1/2 of the sum of the carbon monoxide molar concentration and the hydrogen molar concentration. The concentration adjusting device 4 of the present embodiment includes a concentration measuring device 4a, a hydrogen supply source 4b, a hydrogen amount adjuster 4c, an oxygen supply source 4d, an oxygen amount adjuster 4e, and a controller 4f. The concentration measuring device 4a measures the oxygen molar concentration, the carbon monoxide molar concentration, and the hydrogen molar concentration in the argon gas introduced into the heater 2, and transmits the measurement signal to the controller 4f. The controller 4f is a control signal corresponding to the amount of hydrogen necessary to become less than 1/2 when the measured oxygen molar concentration is 1/2 or more of the sum of the carbon monoxide molar concentration and the hydrogen molar concentration. It is sent to the hydrogen amount adjuster 4c, and when the measured oxygen molar concentration is 1/2 or less of the carbon monoxide molar concentration, the control signal corresponding to the amount of oxygen necessary for exceeding 1/2 is transmitted to the oxygen amount. Regulator 4e. The hydrogen amount adjuster 4c adjusts the opening degree so as to supply hydrogen corresponding to the amount of the control signal from the flow path from the hydrogen supply source 4b to the reactor 3. The oxygen amount adjuster 4e adjusts the opening degree so as to supply oxygen corresponding to the amount of the control signal from the flow path from the oxygen supply source 4d to the reactor 3. Thereby, when setting the oxygen molar concentration in the argon gas to be purified, hydrogen is added when the oxygen molar concentration is 1/2 or more of the sum of the carbon monoxide molar concentration and the hydrogen molar concentration, in the oxygen molar Oxygen is added when the concentration is less than or equal to 1/2 of the concentration of carbon monoxide.
於反應器3內,填充有使一氧化碳與氧之反應優先於氫與氧之反應之觸媒。藉此,於反應器3內,氬氣中之氧與一氧化碳及氫在200℃~300℃之溫度下進行反應,藉此以殘留氫之狀態生成二氧化碳及水。觸媒係包含鉑作為主成分,於本實施形態中,使用藉由氧化鋁所承載之鉑觸媒。觸媒並不限定於鉑,可使用例如鉑合金,亦可包含少量之鈀等其他成分。The reactor 3 is filled with a catalyst that reacts carbon monoxide with oxygen in preference to hydrogen and oxygen. Thereby, in the reactor 3, oxygen in the argon gas is reacted with carbon monoxide and hydrogen at a temperature of 200 ° C to 300 ° C to generate carbon dioxide and water in a state of residual hydrogen. The catalyst contains platinum as a main component, and in the present embodiment, a platinum catalyst supported by alumina is used. The catalyst is not limited to platinum, and for example, a platinum alloy may be used, and a small amount of other components such as palladium may be contained.
冷卻器5連接於反應器3,且將自反應器3流出之氬氣冷卻至40℃左右為止。藉由冷卻器5所冷卻之氬氣被導入至吸附裝置6。The cooler 5 is connected to the reactor 3, and the argon gas flowing out of the reactor 3 is cooled to about 40 °C. The argon gas cooled by the cooler 5 is introduced to the adsorption device 6.
吸附裝置6具有用以將自反應器3流出之氬氣中的雜質之含有率降低之吸附劑。本實施形態之吸附裝置6具有藉由常溫下之變壓式吸附法對氬氣中之雜質進行吸附的PSA(pressure swing adsorption,變壓吸附)單元10、及藉由-10℃~-50℃下之變溫式吸附法對氬氣中之雜質進行吸附的TSA(Temperature swing adsorption,變溫吸附)單元20,於變壓式吸附法之吸附後進行變溫式吸附法之吸附。The adsorption device 6 has an adsorbent for reducing the content of impurities in the argon gas flowing out of the reactor 3. The adsorption device 6 of the present embodiment has a PSA (pressure swing adsorption) unit 10 for adsorbing impurities in argon gas by a pressure swing adsorption method at normal temperature, and by -10 ° C to -50 ° C The TSA (Temperature Swing adsorption) unit 20 for adsorbing impurities in argon under the variable temperature adsorption method is subjected to adsorption by a pressure swing adsorption method and then subjected to a temperature swing adsorption method.
PSA單元10可使用公知者。例如,圖2所示之PSA單元10為4塔式,具有對自反應器3流出之氬氣進行壓縮之壓縮機12、及4個第1~第4吸附塔13,且於各吸附塔13中填充有吸附劑。作為該吸附劑,可使用適於吸附二氧化碳及水分者,可使用例如活性氧化鋁、活性碳、及CaA型沸石。The PSA unit 10 can use a well-known person. For example, the PSA unit 10 shown in FIG. 2 is a 4-tower type, and has a compressor 12 that compresses argon gas flowing out of the reactor 3, and four first to fourth adsorption towers 13, and in each adsorption tower 13 It is filled with an adsorbent. As the adsorbent, those suitable for adsorbing carbon dioxide and water can be used, and for example, activated alumina, activated carbon, and CaA-type zeolite can be used.
壓縮機12經由切換閥13b而連接於各吸附塔13之入口13a。吸附塔13之入口13a分別經由切換閥13e及消音器13f而連接於大氣中。The compressor 12 is connected to the inlet 13a of each adsorption tower 13 via a switching valve 13b. The inlet 13a of the adsorption tower 13 is connected to the atmosphere via a switching valve 13e and a muffler 13f, respectively.
吸附塔13之出口13k係分別經由切換閥13l而連接於流出配管13m,經由切換閥13n而連接於升壓配管13o,經由切換閥13p而連接於均壓‧清潔出側配管13q,經由流量控制閥13r而連接於均壓‧清潔入側配管13s。The outlet 13k of the adsorption tower 13 is connected to the outflow pipe 13m via the switching valve 13l, is connected to the pressure rising pipe 13o via the switching valve 13n, and is connected to the pressure equalizing/cleaning side pipe 13q via the switching valve 13p, and is controlled by the flow rate. The valve 13r is connected to the pressure equalizing ‧ cleaning inlet side pipe 13s.
流出配管13m經由壓力調節閥13t而連接於TSA單元20,從而導入至TSA單元20之氬氣之壓力成為固定。The outflow pipe 13m is connected to the TSA unit 20 via the pressure regulating valve 13t, so that the pressure of the argon gas introduced into the TSA unit 20 becomes fixed.
升壓配管13o經由流量控制閥13u、流量指示調節計13v而連接於流出配管13m,從而升壓配管13o中之流量調節成固定,藉此可防止導入至TSA單元20之氬氣之流量變動。The pressure increasing pipe 13o is connected to the outflow pipe 13m via the flow rate control valve 13u and the flow rate indicating regulator 13v, and the flow rate in the pressure increasing pipe 13o is adjusted to be fixed, whereby the flow rate of the argon gas introduced into the TSA unit 20 can be prevented from fluctuating.
均壓‧清潔出側配管13q與均壓‧清潔入側配管13s係經由一對連結配管13w而彼此連接,且於各連結配管13w上設置有切換閥13x。The pressure equalization ‧ the cleaning outlet pipe 13q and the pressure equalizing ‧ the cleaning inlet pipe 13 s are connected to each other via the pair of connecting pipes 13 w , and the switching pipe 13 x is provided in each of the connecting pipes 13 w .
於PSA單元10之第1~第4吸附塔13中,分別依次進行吸附步驟、減壓I步驟(清潔氣體排出步驟)、減壓II步驟(均壓氣體排出步驟)、脫附步驟、清潔步驟(清潔氣體流入步驟)、升壓I步驟(均壓氣體流入步驟)、升壓II步驟。In the first to fourth adsorption columns 13 of the PSA unit 10, an adsorption step, a pressure reduction I step (clean gas discharge step), a pressure reduction II step (pressure equalization gas discharge step), a desorption step, and a cleaning step are sequentially performed. (Clean gas inflow step), boost I step (pressure equalization gas inflow step), and boost II step.
即,於第1吸附塔13中,僅打開切換閥13b及切換閥131,從而將自反應器3供給之氬氣自壓縮機12經由切換閥13b而導入至第1吸附塔13。藉此,於第1吸附塔13中所導入之氬氣中之至少二氧化碳及水分吸附於吸附劑,藉此進行吸附步驟,雜質之含有率降低之氬氣自第1吸附塔13經由流出配管13m而輸送至TSA單元20。此時,輸送至流出配管13m之氯氣之一部分經由升壓配管13o、流量控制閥13u而輸送至另一吸附塔(於本實施形態中為第2吸附塔13),從而於第2吸附塔13中進行升壓II步驟。In other words, in the first adsorption tower 13, only the switching valve 13b and the switching valve 131 are opened, and the argon gas supplied from the reactor 3 is introduced into the first adsorption tower 13 from the compressor 12 via the switching valve 13b. In this way, at least carbon dioxide and moisture in the argon gas introduced into the first adsorption column 13 are adsorbed to the adsorbent, whereby the adsorption step is performed, and the argon gas having a reduced impurity content is supplied from the first adsorption tower 13 through the outflow pipe 13m. It is delivered to the TSA unit 20. At this time, one part of the chlorine gas sent to the outflow pipe 13m is sent to the other adsorption tower (the second adsorption tower 13 in the present embodiment) via the pressure increasing pipe 13o and the flow rate control valve 13u, so that the second adsorption tower 13 is in the second adsorption tower 13 The boost II step is performed.
其次,關閉第1吸附塔13之切換閥13b、13l,打開切換閥13p,打開另一吸附塔(於本實施形態中為第4吸附塔13)之流量控制閥13r,打開切換閥13x中之1個。藉此,第1吸附塔13之上部之雜質含有率比較少之氬氣經由均壓‧清潔入側配管13s而輸送至第4吸附塔13,從而於第1吸附塔13中進行減壓I步驟。此時,於第4吸附塔13中,打開切換閥13e,進行清潔步驟。Next, the switching valves 13b and 13l of the first adsorption tower 13 are closed, the switching valve 13p is opened, and the flow rate control valve 13r of the other adsorption tower (the fourth adsorption tower 13 in the present embodiment) is opened to open the switching valve 13x. One. In this way, the argon gas having a relatively small impurity content in the upper portion of the first adsorption column 13 is sent to the fourth adsorption column 13 via the pressure equalization ‧ cleaning inlet pipe 13 s, and the pressure is reduced in the first adsorption column 13 . At this time, in the fourth adsorption tower 13, the switching valve 13e is opened to perform a cleaning step.
其次,打開第1吸附塔13之切換閥13p及第4吸附塔13之流量控制閥13r,在此狀態下關閉第4吸附塔13之切換閥13e,藉此於第4吸附塔13中進行實施氣體之回收之減壓II步驟,直至於第1吸附塔13與第4吸附塔13之間,內部壓力變得彼此均勻、或大致均勻為止。此時,切換閥13x亦可根據情形而打開2個。Then, the switching valve 13p of the first adsorption tower 13 and the flow rate control valve 13r of the fourth adsorption tower 13 are opened, and the switching valve 13e of the fourth adsorption tower 13 is closed in this state, thereby being implemented in the fourth adsorption tower 13. In the pressure reduction II step of recovering the gas, the internal pressure becomes uniform or substantially uniform between the first adsorption tower 13 and the fourth adsorption tower 13. At this time, the switching valve 13x can also be opened two depending on the situation.
其次,打開第1吸附塔13之切換閥13e,關閉切換閥13p,藉此進行使雜質自吸附劑脫附之脫附步驟,從而雜質連同氣體一併經由消音器13f排出至大氣中。Next, the switching valve 13e of the first adsorption tower 13 is opened, and the switching valve 13p is closed, whereby a desorption step of desorbing impurities from the adsorbent is performed, and the impurities are discharged together with the gas to the atmosphere via the muffler 13f.
其次,打開第1吸附塔13之流量控制閥13r,關閉處於已結束吸附步驟之狀態的第2吸附塔13之切換閥13b、13l,打開切換閥13p。藉此,第2吸附塔13之上部之雜質含有率比較少之氬氣經由均壓‧清潔入側配管13s而輸送至第1吸附塔13,從而於第1吸附塔13中進行清潔步驟。於第1吸附塔13中,清潔步驟中所使用之氣體經由切換閥13e、消音器13f而排出至大氣中。此時,於第2吸附塔13中進行減壓I步驟。其次,打開第2吸附塔13之切換閥13p及第1吸附塔13之流量控制閥13r,在此狀態下,關閉第1吸附塔之切換閥13e,藉此進行升壓I步驟。此時,切換閥13x亦可根據情形打開2個。Next, the flow rate control valve 13r of the first adsorption tower 13 is opened, and the switching valves 13b and 13l of the second adsorption tower 13 in the state in which the adsorption step has been completed are closed, and the switching valve 13p is opened. In this way, the argon gas having a relatively small impurity content in the upper portion of the second adsorption tower 13 is sent to the first adsorption tower 13 via the pressure equalization ‧ cleaning inlet side pipe 13 s, and the cleaning step is performed in the first adsorption tower 13 . In the first adsorption tower 13, the gas used in the cleaning step is discharged to the atmosphere via the switching valve 13e and the muffler 13f. At this time, the pressure reduction I step is performed in the second adsorption tower 13. Then, the switching valve 13p of the second adsorption tower 13 and the flow rate control valve 13r of the first adsorption tower 13 are opened, and in this state, the switching valve 13e of the first adsorption tower is closed, thereby performing the step I of the pressure increase. At this time, the switching valve 13x can also be opened two depending on the situation.
此後,關閉第1吸附塔13之流量控制閥13r,暫時成為無步驟之待機狀態。該待機狀態持續至第4吸附塔13之升壓II步驟完成為止。若第4吸附塔13之升壓結束後,吸附步驟自第3吸附塔13切換至第4吸附塔13,則打開第1吸附塔之切換閥13n,自處於吸附步驟之另一吸附塔(於本實施形態中為第4吸附塔13)輸送至流出配管13m之氬氣之一部分經由升壓配管13o、流量控制閥13u而輸送至第1吸附塔13,從而於第1吸附塔13中進行升壓II步驟。Thereafter, the flow rate control valve 13r of the first adsorption tower 13 is closed, and the standby state is temporarily completed. This standby state continues until the step of boosting II of the fourth adsorption tower 13 is completed. When the pressure increase of the fourth adsorption column 13 is completed, the adsorption step is switched from the third adsorption column 13 to the fourth adsorption column 13, and the switching valve 13n of the first adsorption column is opened, from the other adsorption column in the adsorption step. In the present embodiment, a portion of the argon gas that has been transported to the outflow pipe 13m by the fourth adsorption column 13) is sent to the first adsorption column 13 via the pressure increasing pipe 13o and the flow rate control valve 13u, thereby being lifted in the first adsorption column 13 Pressure II step.
上述各步驟分別於第1~第4吸附塔13中依次重複進行,藉此,雜質含有率被降低之氬氣連續輸送至TSA單元20。Each of the above-described steps is sequentially repeated in the first to fourth adsorption columns 13, whereby the argon gas having the reduced impurity content is continuously supplied to the TSA unit 20.
再者,PSA單元10並不限定於圖2所示者,例如塔數量亦可為4個以外。Further, the PSA unit 10 is not limited to the one shown in FIG. 2, and for example, the number of towers may be four or more.
TSA單元20可使用公知者。例如,圖3所示之本實施形態之TSA單元20為2塔式,具有對自PSA單元10輸送來之氬氣進行預冷之熱交換型預冷器21、對藉由預冷器21所冷卻之氬氣進一步進行冷卻之熱交換型冷卻器22、第1、第2吸附塔23、及覆蓋各吸附塔23之熱交換器24。熱交換器24係於吸附步驟時,藉由冷媒將吸附劑冷卻,於脫附步驟時,藉由熱媒將吸附劑加熱。各吸附塔23具有填充有吸附劑之多個內管。作為該吸附劑,可使用適於吸附氮者,可使用例如CaX型沸石。The TSA unit 20 can use a well-known person. For example, the TSA unit 20 of the present embodiment shown in FIG. 3 is a two-column type, and has a heat exchange type pre-cooler 21 for precooling argon gas sent from the PSA unit 10, and a precooler 21 for the precooler 21 The cooled argon gas is further cooled by the heat exchange cooler 22, the first and second adsorption towers 23, and the heat exchanger 24 covering the adsorption towers 23. When the heat exchanger 24 is in the adsorption step, the adsorbent is cooled by the refrigerant, and in the desorption step, the adsorbent is heated by the heat medium. Each adsorption tower 23 has a plurality of inner tubes filled with an adsorbent. As the adsorbent, those suitable for adsorbing nitrogen can be used, and for example, a CaX-type zeolite can be used.
冷卻器22經由開關閥23b而連接於各吸附塔23之入口23a。The cooler 22 is connected to the inlet 23a of each adsorption tower 23 via the on-off valve 23b.
吸附塔23之入口23a分別經由開關閥23c而通向大氣中。The inlet 23a of the adsorption tower 23 is opened to the atmosphere via the on-off valve 23c.
吸附塔23之出口23e係分別經由開關閥23f而連接於流出配管23g,經由開關閥23h而連接於冷卻及升壓用配管23i,經由開關閥23j而連接於清潔用配管23k。The outlet 23e of the adsorption tower 23 is connected to the outflow piping 23g via the switching valve 23f, is connected to the cooling and pressure increasing piping 23i via the switching valve 23h, and is connected to the cleaning piping 23k via the switching valve 23j.
流出配管23g構成預冷器21之一部分,且藉由自流出配管23g流出之經純化之氬氣使自PSA單元10輸送來之氬氣冷卻。自流出配管23g經純化之氬氣經由一次側壓力控制閥231流出。The outflow pipe 23g constitutes a part of the precooler 21, and the argon gas sent from the PSA unit 10 is cooled by the purified argon gas flowing out from the outflow pipe 23g. The purified argon gas from the outflow pipe 23g flows out through the primary side pressure control valve 231.
冷卻及升壓用配管23i、清潔用配管23k經由流量計23m、流量控制閥23o、開關閥23n而連接於流出配管23g。The cooling and boosting piping 23i and the cleaning piping 23k are connected to the outflow piping 23g via the flow meter 23m, the flow rate control valve 23o, and the switching valve 23n.
熱交換器24設為多管式,具有包圍構成吸附塔23之多個內管的外管24a、冷媒供給源24b、冷媒用散熱器24c、熱媒供給源24d、熱媒用散熱器24e。又,設置有複數個開關閥24f,該等開關閥24f係用以切換為使自冷媒供給源24b供給之冷媒經由外管24a、冷媒用散熱器24c而循環之狀態、及使自熱媒供給源24d供給之熱媒經由外管24a、熱媒用散熱器24e而循環之狀態。進而,藉由自冷媒用散熱器24c分支出之配管構成冷卻器22之一部分,藉由自冷媒供給源24b供給之冷媒而使氬氣於冷卻器22中冷卻,該冷媒回流至貯槽24g。The heat exchanger 24 is a multi-tube type, and has an outer tube 24a, a refrigerant supply source 24b, a refrigerant radiator 24c, a heat medium supply source 24d, and a heat medium radiator 24e that surround the plurality of inner tubes constituting the adsorption tower 23. Further, a plurality of on-off valves 24f for switching the refrigerant supplied from the refrigerant supply source 24b through the outer tube 24a and the refrigerant radiator 24c and supplying the self-heating medium are provided. The heat medium supplied from the source 24d is circulated through the outer tube 24a and the heat medium radiator 24e. Further, a part of the cooler 22 is formed by a pipe branched from the refrigerant radiator 24c, and the argon gas is cooled in the cooler 22 by the refrigerant supplied from the refrigerant supply source 24b, and the refrigerant is returned to the storage tank 24g.
於TSA單元20之第1、第2吸附塔23中,分別依次進行吸附步驟、脫附步驟、清潔步驟、冷卻步驟、升壓步驟。The adsorption step, the desorption step, the cleaning step, the cooling step, and the pressure increasing step are sequentially performed in the first and second adsorption towers 23 of the TSA unit 20, respectively.
即,於TSA單元20中,自PSA單元10供給之氬氣在預冷器21、冷卻器22中冷卻之後,經由開關閥23b而導入至第1吸附塔23。此時,第1吸附塔23藉由冷媒於熱交換器24中循環而成為冷卻至-10℃~-50℃之狀態,開關閥23c、23h、23j關閉,開關閥23f打開,氬氣中所含之至少氮被吸附於吸附劑。藉此,於第1吸附塔23中進行吸附步驟,從而雜質之含有率被降低之純化氯氣自吸附塔23經由一次側壓力控制閥231流出。In other words, in the TSA unit 20, the argon gas supplied from the PSA unit 10 is cooled in the precooler 21 and the cooler 22, and then introduced into the first adsorption tower 23 via the on-off valve 23b. At this time, the first adsorption tower 23 is circulated in the heat exchanger 24 by the refrigerant, and is cooled to -10 ° C to -50 ° C. The on-off valves 23c, 23h, and 23j are closed, and the on-off valve 23f is opened. At least nitrogen is adsorbed to the adsorbent. By this, the adsorption step is performed in the first adsorption tower 23, and the purified chlorine gas having a reduced impurity content is discharged from the adsorption tower 23 via the primary pressure control valve 231.
於在第1吸附塔23中進行吸附步驟期間,於第2吸附塔23中進行脫附步驟、清潔步驟、冷卻步驟、升壓步驟。During the adsorption step in the first adsorption tower 23, a desorption step, a cleaning step, a cooling step, and a pressure increasing step are performed in the second adsorption tower 23.
即,於第2吸附塔23中,為了在吸附步驟結束後實施脫附步驟而關閉開關閥23b、23f,打開開關閥23c。藉此,於第2吸附塔23中,包含雜質之氦氣排出至大氣中,且壓力大致降至大氣壓。於該脫附步驟中,將在第2吸附塔23中於吸附步驟時使冷媒循環之熱交換部24之開關閥24f切換為關閉狀態而使冷媒之循環停止,且將使冷媒自熱交換部24抽出而返回至冷媒供給源24b之開關閥24f切換為打開狀態。In other words, in the second adsorption tower 23, in order to perform the desorption step after the end of the adsorption step, the on-off valves 23b and 23f are closed, and the on-off valve 23c is opened. Thereby, in the second adsorption tower 23, helium gas containing impurities is discharged to the atmosphere, and the pressure is substantially reduced to atmospheric pressure. In the desorption step, the switching valve 24f of the heat exchange unit 24 that circulates the refrigerant in the second adsorption tower 23 is switched to the closed state to stop the circulation of the refrigerant, and the refrigerant is supplied to the heat exchange unit. The on-off valve 24f that has been withdrawn and returned to the refrigerant supply source 24b is switched to the open state.
其次,為了於第2吸附塔23中實施清潔步驟,第2吸附塔23之開關閥23c、23j及清潔用配管23k之開關閥23n成為打開狀態,從而藉由熱交換型預冷器21之熱交換而受到加熱的純化氯氣之一部分經由清潔用配管23k而被導入至第2吸附塔23。藉此,於第2吸附塔23中,實施雜質自吸附劑之脫附、及藉由純化氬氣之清潔,且該清潔時所使用之氬氣連同雜質一併自開關閥23c排出至大氣中。於該清潔步驟中,將於第2吸附塔23中用以使熱媒循環之熱交換部24之開關閥24f切換為打開狀態。Then, in order to perform the cleaning step in the second adsorption tower 23, the on-off valves 23c and 23j of the second adsorption tower 23 and the on-off valve 23n of the cleaning piping 23k are opened, whereby the heat of the heat exchange type precooler 21 is utilized. One part of the purified chlorine gas that is heated by the exchange is introduced into the second adsorption tower 23 via the cleaning pipe 23k. Thereby, in the second adsorption tower 23, desorption of impurities from the adsorbent and purification by argon purification are performed, and the argon gas used for the cleaning is discharged together with the impurities to the atmosphere from the on-off valve 23c. . In the cleaning step, the on-off valve 24f of the heat exchange unit 24 for circulating the heat medium is switched to the open state in the second adsorption tower 23.
其次,為了於第2吸附塔23中實施冷卻步驟,第2吸附塔23之開關閥23j、及清潔用配管23k之開關閥23n成為關閉狀態,第2吸附塔23之開關閥23h、及冷卻及升壓用配管23i之開關閥23n成為打開狀態,從而自第1吸附塔23流出之純化氬氣之一部分經由冷卻‧升壓用配管23i而導入至第2吸附塔23。藉此,已於第2吸附塔23內進行冷卻之純化氬氣經由開關閥23c而排出至大氣中。於該冷卻步驟中,將用於使熱媒循環之開關閥24f切換為關閉狀態而使熱媒停止循環,將使熱媒自熱交換部24抽出而返回至熱媒供給源24d之開關閥24f切換為打開狀態。於結束熱媒之抽出後,將於第2吸附塔23中用以使冷媒循環之熱交換部24之開關閥24f切換為打開狀態,從而設為冷媒循環狀態。該冷媒循環狀態持續至下一升壓步驟、後續之吸附步驟結束為止。Next, in order to perform the cooling step in the second adsorption tower 23, the on-off valve 23j of the second adsorption tower 23 and the on-off valve 23n of the cleaning piping 23k are turned off, the on-off valve 23h of the second adsorption tower 23, and the cooling and The on-off valve 23n of the pressure increasing pipe 23i is opened, and one part of the purified argon gas flowing out of the first adsorption tower 23 is introduced into the second adsorption tower 23 via the cooling/boosting pipe 23i. Thereby, the purified argon gas which has been cooled in the second adsorption tower 23 is discharged to the atmosphere via the on-off valve 23c. In the cooling step, the switching valve 24f for circulating the heat medium is switched to the closed state to stop the circulation of the heat medium, and the switching valve 24f for returning the heat medium from the heat exchange unit 24 to the heat medium supply source 24d is returned. Switch to the on state. After the completion of the extraction of the heat medium, the on-off valve 24f of the heat exchange unit 24 for circulating the refrigerant in the second adsorption tower 23 is switched to the open state to be in the refrigerant circulation state. The refrigerant circulation state continues until the next pressure rising step and the subsequent adsorption step ends.
其次,為了於第2吸附塔23中實施升壓步驟,關閉第2吸附塔23之開關閥23c,導入自第1吸附塔23流出之純化氬氣之一部分,藉此,第2吸附塔23之內部升壓。該升壓步驟係持續至第2吸附塔23之內壓變得與第1吸附塔23之內壓大致相等為止。若升壓步驟結束,則第2吸附塔23之開關閥23h、及冷卻‧升壓用配管23i之開關閥23n關閉,藉此,第2吸附塔23之全部之開關閥23b、23c、23f、23h、23j成為關閉狀態,從而第2吸附塔23成為待機狀態直至下一吸附步驟為止。Next, in order to carry out the pressure increasing step in the second adsorption tower 23, the on-off valve 23c of the second adsorption tower 23 is closed, and a part of the purified argon gas flowing out from the first adsorption tower 23 is introduced, whereby the second adsorption tower 23 is Internal boost. This step of boosting continues until the internal pressure of the second adsorption tower 23 becomes substantially equal to the internal pressure of the first adsorption tower 23. When the step of raising the pressure is completed, the on-off valve 23h of the second adsorption tower 23 and the on-off valve 23n of the cooling/boosting piping 23i are closed, whereby all of the on-off valves 23b, 23c, and 23f of the second adsorption tower 23 are 23h and 23j are in a closed state, and the second adsorption tower 23 is in a standby state until the next adsorption step.
第2吸附塔23之吸附步驟係與第1吸附塔23之吸附步驟相同地實施。於在第2吸附塔23中進行吸附步驟期間,於第1吸附塔23中,相同地進行脫附步驟、清潔步驟、冷卻步驟、升壓步驟與第2吸附塔23。The adsorption step of the second adsorption tower 23 is carried out in the same manner as the adsorption step of the first adsorption tower 23. During the adsorption step in the second adsorption column 23, the desorption step, the cleaning step, the cooling step, the pressure increasing step, and the second adsorption column 23 are similarly performed in the first adsorption tower 23.
再者,TSA單元20並不限定於圖3所示者,例如塔數量可為2個以上,亦可為3、4個。Further, the TSA unit 20 is not limited to the one shown in FIG. 3. For example, the number of towers may be two or more, and may be three or four.
根據上述純化裝置α,於對至少含有氧、氫、一氧化碳、及氮之氬氣進行純化時,將該氬氣中之氧莫耳濃度設定成小於一氧化碳莫耳濃度與氫莫耳濃度之和的1/2,其次,使用使一氧化碳與氧之反應優先於氫與氧之反應之觸媒,使該氬氣中之氧與一氧化碳及氫反應,藉此以殘留氫之狀態生成二氧化碳及水,此後,可使用吸附劑降低該氬氣中之雜質之含有率。藉此,使即便殘留問題亦較少之氫積極地殘留,於吸附去除之情形時可實現使冷卻能量增大之氧之完全燃燒。進而,亦無需使存在降低觸媒功能之虞且較二氧化碳更難以吸附之一氧化碳積極地殘留。藉此,使純化設備之管理變得容易,並且可實現小型化,從而可降低能量消耗。又,於使用吸附劑降低氬氣中之雜質之含有率時,在藉由常溫下之變壓式吸附法吸附該雜質中之至少二氧化碳及水後,藉由-10℃~-50℃下之變溫式吸附法吸附該雜質中之至少氮,故而可高效地吸附二氧化碳、水、及氮。又,將氬氣中之氧莫耳濃度設定為超過一氧化碳莫耳濃度之1/2之值,藉此可實現存在降低觸媒之功能之虞之一氧化碳之完全燃燒。進而,於設定氬氣中之氧莫耳濃度時,在氧莫耳濃度為一氧化碳莫耳濃度與氫莫耳濃度之和的1/2以上之情形時添加氫,在氧莫耳濃度為一氧化碳莫耳濃度之1/2以下之情形時添加氧,藉此由於未添加一氧化碳,故而可防止一氧化碳與水之反應副生成物降低氬氣之純度。According to the purification apparatus α, when the argon gas containing at least oxygen, hydrogen, carbon monoxide, and nitrogen is purified, the oxygen molar concentration in the argon gas is set to be smaller than the sum of the carbon monoxide molar concentration and the hydrogen molar concentration. 1/2, secondly, using a catalyst that reacts carbon monoxide with oxygen in preference to the reaction of hydrogen and oxygen, the oxygen in the argon is reacted with carbon monoxide and hydrogen, thereby generating carbon dioxide and water in a state of residual hydrogen, and thereafter The adsorbent can be used to reduce the content of impurities in the argon gas. Thereby, hydrogen which is less likely to remain in the residual state is actively retained, and in the case of adsorption removal, complete combustion of oxygen which increases the cooling energy can be achieved. Further, there is no need to make it possible to reduce the catalyst function and to more actively adsorb carbon monoxide than carbon dioxide. Thereby, the management of the purification apparatus is facilitated, and miniaturization can be achieved, thereby reducing energy consumption. Further, when the adsorbent is used to reduce the content of impurities in the argon gas, at least carbon dioxide and water in the impurities are adsorbed by a pressure swing adsorption method at a normal temperature, and then, by -10 ° C to -50 ° C The variable temperature adsorption method adsorbs at least nitrogen in the impurities, so that carbon dioxide, water, and nitrogen can be efficiently adsorbed. Further, by setting the oxygen molar concentration in the argon gas to a value exceeding 1/2 of the carbon monoxide molar concentration, it is possible to achieve complete combustion of one of the carbon oxides which has a function of reducing the catalyst. Further, when the oxygen molar concentration in the argon gas is set, hydrogen is added when the oxygen molar concentration is 1/2 or more of the sum of the carbon monoxide molar concentration and the hydrogen molar concentration, and the oxygen molar concentration is carbon monoxide. When the concentration of the ear is less than or equal to 1/2, oxygen is added, whereby since carbon monoxide is not added, the reaction product of carbon monoxide and water can be prevented from lowering the purity of argon gas.
使用上述純化裝置α對自多晶矽鑄造爐回收之氬氣進行純化。氬氣中,作為雜質分別含有氮3000莫耳ppm、氧550莫耳ppm、氫200莫耳ppm、一氧化碳1000莫耳ppm、二氧化碳10莫耳ppm。藉由鼓風機7將氯氣升壓至0.05 MpaG,並以200 Nm3 /h之流量導入至加熱器2,將溫度控制至250℃,導入至反應器3。反應器3係直徑為400 mm、長度為1200 mm之圓筒狀,且填充有藉由氧化鋁所承載之鉑觸媒(恩億凱特(NE Chemcat)公司製DASH-220)。藉由反應器3中之反應,使得氬氣之雜質濃度成為:氮為3000莫耳ppm,氧為1莫耳ppm以下,氫為100莫耳ppm,一氧化碳為1莫耳ppm以下,二氧化碳為1010莫耳ppm,水分為100莫耳ppm。The argon recovered from the polycrystalline cast furnace was purified using the above purification apparatus α. The argon gas contained 3000 mol of nitrogen, 550 mol of oxygen, 200 mol of hydrogen, 1000 mol of carbon monoxide, and 10 mol of carbon dioxide as impurities. The chlorine gas was pressurized to 0.05 MpaG by a blower 7, and introduced into the heater 2 at a flow rate of 200 Nm 3 /h, and the temperature was controlled to 250 ° C, and introduced into the reactor 3. The reactor 3 was a cylindrical shape having a diameter of 400 mm and a length of 1200 mm, and was filled with a platinum catalyst (DASH-220 manufactured by NE Chemcat Co., Ltd.) carried by alumina. By the reaction in the reactor 3, the impurity concentration of the argon gas is: nitrogen is 3000 mol ppm, oxygen is 1 mol ppm or less, hydrogen is 100 mol ppm, carbon monoxide is 1 mol ppm or less, and carbon dioxide is 1010. MoM ppm, moisture is 100 mol ppm.
於將該氬氣利用藉由水冷式冷卻器而構成之冷卻器5冷卻至40℃為止後,經由壓縮機12導入至PSA單元10之一個吸附塔13。各吸附塔13係直徑為600 mm、長度為1800 mm之圓筒狀,且填充CaA型沸石(Union Showa公司製5AHP)作為吸附劑。於各吸附塔13中,以800秒進行升壓步驟、吸附步驟、清潔步驟、脫附步驟之1個週期。氬氣藉由壓縮機12而升壓至0.8 MPaG。自PSA單元10流出之氬氣之流量變為120 Nm3 /h,氬中之雜質濃度成為:氮為150莫耳ppm,氧為0.1莫耳ppm以下,氫為100莫耳ppm,一氧化碳為0.5莫耳ppm以下,水分及二氧化碳為0.5莫耳ppm以下,且露點為-70℃以下。The argon gas is cooled to 40° C. by the cooler 5 configured by a water-cooled cooler, and then introduced into one adsorption tower 13 of the PSA unit 10 via the compressor 12 . Each of the adsorption towers 13 has a cylindrical shape of 600 mm in diameter and 1800 mm in length, and is filled with CaA type zeolite (5AHP manufactured by Union Showa Co., Ltd.) as an adsorbent. Each of the adsorption towers 13 was subjected to one cycle of a pressure increasing step, an adsorption step, a cleaning step, and a desorption step in 800 seconds. The argon gas is boosted to 0.8 MPaG by the compressor 12. The flow rate of the argon gas flowing out from the PSA unit 10 becomes 120 Nm 3 /h, and the impurity concentration in the argon becomes: 150 mol ppm of nitrogen, 0.1 mol ppm or less of oxygen, 100 mol ppm of hydrogen, and 0.5 mol of carbon monoxide. The molar amount of water and carbon dioxide is 0.5 mol or less and the dew point is -70 ° C or less.
於將藉由PSA單元10所純化之氬氣在預冷器21、冷卻器22中冷卻後,導入至TSA單元20之一個吸附塔23。各吸附塔23係直徑為900 mm、長度為1500 mm之圓筒狀,且於其內部具有作為吸附劑而填充有CaX型沸石(TOSOH公司製SA600A)之50根內管。藉由熱交換器24將通過一根內管之氬氣冷卻至-35℃,並將通過另一根內管之氬氣加熱至40℃。自TSA單元20流出之氬氣之流量變為110 Nm3 /h,氬氣中之雜質濃度成為:氮為0.1莫耳ppm以下,氧為0.1莫耳ppm以下,氫為110莫耳ppm,一氧化碳為0.5莫耳ppm以下,二氧化碳為0.5莫耳ppm以下,且露點為-70℃以下,從而實質上之雜質僅成為氫。After the argon gas purified by the PSA unit 10 is cooled in the precooler 21 and the cooler 22, it is introduced into one adsorption tower 23 of the TSA unit 20. Each of the adsorption towers 23 has a cylindrical shape with a diameter of 900 mm and a length of 1500 mm, and has 50 inner tubes filled with CaX-type zeolite (SA600A manufactured by TOSOH Co., Ltd.) as an adsorbent. The argon gas passing through an inner tube was cooled to -35 ° C by a heat exchanger 24, and the argon gas passing through the other inner tube was heated to 40 ° C. The flow rate of the argon gas flowing out from the TSA unit 20 becomes 110 Nm 3 /h, and the impurity concentration in the argon gas is: 0.1 mol or less of nitrogen, 0.1 mol ppm or less of oxygen, 110 mol ppm of hydrogen, and carbon monoxide. It is 0.5 mol ppm or less, carbon dioxide is 0.5 mol ppm or less, and the dew point is -70 ° C or less, so that substantially impurities are only hydrogen.
本發明並不限定於上述實施形態或實施例。例如,於需要降低藉由本發明而純化之氬氣中之氫濃度之情形時,亦可設置如圖1中以虛線所示之氫去除裝置30。氫去除裝置30可由如下等構件構成:藉由例如聚醯亞胺膜等具有氫透過性之氣體分離膜而分離氬氣與氫者;或於填充有包含銅、鎳等之金屬氧化物的觸媒之反應器內,與該金屬氧化物反應而去除氫者。再者,藉由金屬氧化物與氫之反應所生成之水分係例如於觸媒之下游側填充氧化鋁凝膠或沸石等吸濕劑來去除。氫去除裝置30可如圖1所示配置於TSA單元20之下游,亦可配置於PSA單元10與TSA單元20之間。於TSA單元20之下游設置具有直徑為300 mm之圓筒狀反應器,向該反應器中填充主成分為氧化銅之觸媒,並使藉由上述實施例而純化之氬氣通過,之後,氬氣之流量變為110 Nm3 /h,氬中之雜質濃度中成為:氮為0.1莫耳ppm以下,氧為0.1莫耳ppm以下,氫為0.5莫耳ppm以下,一氧化碳為0.5莫耳ppm以下,二氧化碳為0.5莫耳ppm以下,且露點為-70℃以下,從而可確認氫之去除。藉由設置此種氫去除裝置30,亦可對應於要求降低氬氣中所含之氫之用途。The present invention is not limited to the above embodiments or examples. For example, when it is desired to reduce the concentration of hydrogen in the argon gas purified by the present invention, a hydrogen removing device 30 as shown by a broken line in Fig. 1 may be provided. The hydrogen removal device 30 may be configured by separating a argon gas and a hydrogen gas by a gas separation membrane having a hydrogen permeability such as a polyimide membrane, or a metal oxide containing copper, nickel, or the like. In the reactor of the medium, the metal oxide is reacted to remove hydrogen. Further, the water generated by the reaction of the metal oxide and hydrogen is removed by, for example, filling a downstream side of the catalyst with a moisture absorbent such as an alumina gel or a zeolite. The hydrogen removal device 30 may be disposed downstream of the TSA unit 20 as shown in FIG. 1 or may be disposed between the PSA unit 10 and the TSA unit 20. A cylindrical reactor having a diameter of 300 mm is disposed downstream of the TSA unit 20, and the catalyst is filled with a catalyst having a main component of copper oxide, and argon gas purified by the above embodiment is passed, and then, The flow rate of argon gas is 110 Nm 3 /h, and the impurity concentration in argon is: 0.1 mol or less of nitrogen, 0.1 mol% or less of oxygen, 0.5 mol% or less of hydrogen, and 0.5 mol ppm of carbon monoxide. Hereinafter, the carbon dioxide was 0.5 mol ppm or less, and the dew point was -70 ° C or less, and the removal of hydrogen was confirmed. By providing such a hydrogen removing device 30, it is also possible to respond to the demand for reducing the hydrogen contained in the argon gas.
1...氬氣供給源1. . . Argon supply
2...加熱器及2. . . Heater and
3...反應器3. . . reactor
4...濃度調節裝置4. . . Concentration adjusting device
4a...濃度測定器4a. . . Concentration tester
4b...氫供給源4b. . . Hydrogen supply source
4c...氫量調整器4c. . . Hydrogen regulator
4d...氧供給源4d. . . Oxygen supply
4e...氧量調節器4e. . . Oxygen regulator
4f...控制器4f. . . Controller
5...冷卻器5. . . Cooler
6...吸附裝置6. . . Adsorption device
7...鼓風機7. . . Blower
10...PSA單元10. . . PSA unit
12...壓縮機12. . . compressor
13、23...吸附塔13,23. . . Adsorption tower
13a...吸附塔13之入口13a. . . Entrance of adsorption tower 13
13b、13e、13l、13n、13p、13x...切換閥13b, 13e, 13l, 13n, 13p, 13x. . . Switching valve
13f...消音器13f. . . silencer
13k...吸附塔13之出口13k. . . The outlet of the adsorption tower 13
13m、23g...流出配管13m, 23g. . . Outflow piping
13o...升壓配管13o. . . Boost piping
13q...均壓‧清潔出側配管13q. . . Pressure equalization ‧ clean out side piping
13r、13u...流量控制閥13r, 13u. . . Flow control valve
13s...均壓‧清潔入側配管13s. . . Pressure equalization ‧ clean side piping
13t...壓力調節閥13t. . . A pressure regulating valve
13v...流量指示調節計13v. . . Flow indicator regulator
13w...連結配管13w. . . Connecting piping
20...TSA單元20. . . TSA unit
21...預冷器twenty one. . . Precooler
22...冷卻器twenty two. . . Cooler
23a...吸附塔23之入口23a. . . Entrance to adsorption tower 23
23b、23c、23f、23h、23j、23n、24f...開關閥23b, 23c, 23f, 23h, 23j, 23n, 24f. . . Switch valve
23e...吸附塔23之出口23e. . . The outlet of the adsorption tower 23
23i...冷卻及升壓用配管23i. . . Cooling and boosting piping
23k...清潔用配管23k. . . Cleaning pipe
23l...一次側壓力控制閥23l. . . Primary side pressure control valve
23m...流量計23m. . . Flow meter
23o...流量控制閥23o. . . Flow control valve
24...熱交換器twenty four. . . Heat exchanger
24a...外管24a. . . Outer tube
24b...冷媒供給源24b. . . Refrigerant supply
24c...冷媒用散熱器24c. . . Refrigerant radiator
24d...熱媒供給源24d. . . Heat medium supply
24e...熱媒用散熱器24e. . . Heat medium radiator
24g...貯槽24g. . . Storage tank
30...氫去除裝置30. . . Hydrogen removal device
α...純化裝置α. . . Purification device
圖1係本發明之實施形態之氬氣之純化裝置的構成說明圖;Fig. 1 is a block diagram showing the configuration of an apparatus for purifying an argon gas according to an embodiment of the present invention;
圖2係本發明之實施形態之氬氣之純化裝置中的變壓式吸附裝置之構成說明圖;及Figure 2 is a block diagram showing the configuration of a pressure swing type adsorption device in an apparatus for purifying argon gas according to an embodiment of the present invention;
圖3係本發明之實施形態之氬氣之純化裝置中的變溫式吸附裝置之構成說明圖。Fig. 3 is a block diagram showing the configuration of a variable temperature adsorption device in an apparatus for purifying argon gas according to an embodiment of the present invention.
1...氬氣供給源1. . . Argon supply
2...加熱器2. . . Heater
3...反應器3. . . reactor
4...濃度調節裝置4. . . Concentration adjusting device
4a...濃度測定器4a. . . Concentration tester
4b...氫供給源4b. . . Hydrogen supply source
4c...氫量調整器4c. . . Hydrogen regulator
4d...氧供給源4d. . . Oxygen supply
4e...氧量調節器4e. . . Oxygen regulator
4f...控制器4f. . . Controller
5...冷卻器5. . . Cooler
6...吸附裝置6. . . Adsorption device
7...鼓風機7. . . Blower
10...PSA單元10. . . PSA unit
20...TSA單元20. . . TSA unit
30...氫去除裝置30. . . Hydrogen removal device
α...純化裝置α. . . Purification device
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| JP2013049605A (en) * | 2011-08-31 | 2013-03-14 | Taiyo Nippon Sanso Corp | Inert gas purification method |
| JP5745434B2 (en) * | 2012-01-31 | 2015-07-08 | 住友精化株式会社 | Argon gas purification method and purification apparatus |
| JP5896467B2 (en) * | 2012-08-09 | 2016-03-30 | 住友精化株式会社 | Argon gas purification method and purification apparatus |
| JP6304089B2 (en) * | 2015-03-24 | 2018-04-04 | 信越半導体株式会社 | Argon gas purification method and argon gas recovery and purification apparatus |
| CN111847407B (en) * | 2020-08-31 | 2024-08-13 | 成都赛普瑞兴科技有限公司 | Multistage helium extraction device and multistage helium extraction process |
| US11685659B2 (en) * | 2021-11-24 | 2023-06-27 | Uop Llc | Processes and apparatuses for reducing carbon monoxide levels in a gaseous stream |
| CN116236899B (en) * | 2023-03-31 | 2025-10-24 | 大连科利德光电子材料有限公司 | Method for removing reactive impurities from rare gases |
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| KR20110093640A (en) | 2011-08-18 |
| CN102153057A (en) | 2011-08-17 |
| JP2011184287A (en) | 2011-09-22 |
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