TWI472007B - Encapsulation structure of embedded electronic components - Google Patents
Encapsulation structure of embedded electronic components Download PDFInfo
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- TWI472007B TWI472007B TW99146374A TW99146374A TWI472007B TW I472007 B TWI472007 B TW I472007B TW 99146374 A TW99146374 A TW 99146374A TW 99146374 A TW99146374 A TW 99146374A TW I472007 B TWI472007 B TW I472007B
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Description
本發明是有關於一種電子元件封裝結構,且特別是有關於一種內埋式電子元件封裝結構。The present invention relates to an electronic component package structure, and more particularly to a buried electronic component package structure.
針對目前電子產品之電磁干擾(electromagnetic interference,EMI)而導致電子裝置或整體電路的效能表現降低,常見之手段是在基板上所設置封裝體外加額外屏蔽板或外罩式的金屬蓋做為電磁波干擾防治。當考慮電子裝置或封裝體的整體厚度時,則需要探討內埋電子元件的構裝方式。In view of the electromagnetic interference (EMI) of current electronic products, the performance of the electronic device or the overall circuit is reduced. The common method is to add an extra shielding plate or a cover-type metal cover to the externally disposed package on the substrate as electromagnetic interference. Prevention and treatment. When considering the overall thickness of an electronic device or package, it is necessary to investigate the manner in which the embedded electronic components are mounted.
本發明提供一種電子元件封裝體,具有至少一第一電子元件、第一遮蔽層以及第一介電結構。第一電子元件配置於一基板上並電性連結至該基板。第一遮蔽層,配置於該基板上,且至少包覆該第一電子元件之上表面與至少一側面與部份該基板。第一介電結構,配置於該第一遮蔽層上與該基板上,且覆蓋該第一電子元件。The present invention provides an electronic component package having at least a first electronic component, a first shielding layer, and a first dielectric structure. The first electronic component is disposed on a substrate and electrically connected to the substrate. The first shielding layer is disposed on the substrate and covers at least the upper surface of the first electronic component and at least one side surface and a portion of the substrate. The first dielectric structure is disposed on the first shielding layer and the substrate and covers the first electronic component.
本發明提供一種內埋式電子元件封裝體,具有至少一電子元件、一遮蔽層與一封膠體。該電子元件配置於一疊層上並電性連結至該疊層,而該疊層具有至少一介電結構與一金屬圖案結構配置於該介電結構下方。該遮蔽層,配置於該疊層上且至少包覆該電子元件之上表面與至少一側面與部份該疊層的該金屬圖案結構。該封膠體,配置於該疊層上並包封住該電子元件與該遮蔽層。The invention provides a buried electronic component package having at least one electronic component, a shielding layer and a gel. The electronic component is disposed on a stack and electrically connected to the stack, and the stack has at least one dielectric structure and a metal pattern structure disposed under the dielectric structure. The shielding layer is disposed on the laminate and covers at least the upper surface of the electronic component and the at least one side surface and the portion of the metal pattern structure of the laminate. The encapsulant is disposed on the laminate and encapsulates the electronic component and the shielding layer.
基於上述,本發明之電子元件封裝體的製作方法,是在上模封膠之前或疊層壓合之間,將電子元件的上方或/及周圍覆蓋至少一遮蔽層。Based on the above, the electronic component package of the present invention is formed by covering at least one shielding layer above or/and around the electronic component before or during lamination.
為讓本發明之上述特徵能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。In order to make the above-described features of the present invention more comprehensible, the following detailed description of the embodiments will be described in detail below.
本發明於進行內埋電子元件封裝製程中,同步形成可達成電磁干擾屏蔽(EMI shielding)的架構。主要是利用在內埋式電子元件的上方或/及周圍覆蓋至少一金屬薄膜,使得電子元件受到金屬薄膜的包覆並免於電磁干擾,同時也可強化電子元件的導熱散熱效果。In the process of the embedded electronic component packaging process, the invention synchronously forms an architecture that can achieve EMI shielding. The utility model mainly covers at least one metal film above or/and around the buried electronic component, so that the electronic component is covered by the metal film and is free from electromagnetic interference, and the heat conduction and heat dissipation effect of the electronic component can also be enhanced.
本發明中可利用電鍍、或者以膠膜貼附或者以圖案化之介面層壓合方式,附加金屬薄膜至內埋式電子元件上。金屬薄膜更可設計不同圖案形式,以改善防護效果及增加黏著力,或減少金屬薄膜貼附過程中氣泡產生的可能性。In the present invention, a metal film can be attached to the embedded electronic component by electroplating, or by adhesive film bonding or by patterned interface lamination. The metal film can be designed in different patterns to improve the protection effect and increase the adhesion, or reduce the possibility of bubble generation during the metal film attachment process.
圖1A至圖1F繪示依照本發明之一實施例之一種電子元件封裝結構的製作流程剖面示意圖。在此必須說明的是,電子元件可為一半導體晶片或半導體元件,其例如是一主動元件如電晶體、二極體、發光二極體(LED)或一被動元件如電阻、電容或電感元件等。1A-1F are schematic cross-sectional views showing a manufacturing process of an electronic component package structure according to an embodiment of the invention. It must be noted here that the electronic component can be a semiconductor wafer or a semiconductor component, such as an active component such as a transistor, a diode, a light emitting diode (LED) or a passive component such as a resistor, a capacitor or an inductor component. Wait.
請先參考圖1A,首先,提供一基板100,其中基板100上具有由至少一介電薄膜102與一黏膠層104所構成之一疊層101。介電薄膜102的材質為例如聚醯亞胺(polyimide)或苯基環丁烯(benzocyclobutene,BCB),或ABF而黏膠層104的材質例如是熱固性黏膠或者熱塑性黏膠。接著,依序將電子元件106a/106b/106c面朝下(face-down)配置於黏膠層104之上。於此實施例中,電子元件106a例如是IC晶片,電子元件106b例如是被動元件,而電子元件106c例如是射頻(Radio-Frequency,RF)晶片。所謂「面朝下」即指將電子元件之接觸端105接觸黏膠層104之上表面。但實際電子元件之種類、相對配置位置或數目並不限於本案所述,可視產品實際需要調整或變動。Referring first to FIG. 1A, first, a substrate 100 is provided having a stack 101 of at least one dielectric film 102 and an adhesive layer 104. The material of the dielectric film 102 is, for example, polyimide or benzocyclobutene (BCB), or ABF, and the material of the adhesive layer 104 is, for example, a thermosetting adhesive or a thermoplastic adhesive. Next, the electronic components 106a/106b/106c are sequentially disposed on the adhesive layer 104 face-down. In this embodiment, the electronic component 106a is, for example, an IC chip, the electronic component 106b is, for example, a passive component, and the electronic component 106c is, for example, a radio frequency (RF) chip. By "face down" is meant contacting the contact end 105 of the electronic component with the upper surface of the adhesive layer 104. However, the types, relative positions, or numbers of actual electronic components are not limited to those described in this case, and may be adjusted or changed depending on actual needs of the product.
接著,請參考圖1B,形成一遮蔽層110於黏膠層104的上表面上,覆蓋住電子元件106a/106b/106c。遮蔽層110的材質例如是鋁或銅金屬。形成遮蔽層110的方法例如是化學電鍍或者濺鍍(sputter)方式電鍍鋁或銅或其他金屬如銀(Ag)鎳(Ni)薄膜、或者複數層金屬薄膜至電子元件表面上,或者以銅膠帶或非金屬導電碳膠帶貼附方式至電子元件表面上。遮蔽層110更可包括一黏著層(未圖示)以幫助平整貼附至電子元件表面上。Next, referring to FIG. 1B, a shielding layer 110 is formed on the upper surface of the adhesive layer 104 to cover the electronic components 106a/106b/106c. The material of the shielding layer 110 is, for example, aluminum or copper metal. The method of forming the shielding layer 110 is, for example, electroplating or sputtering to plate aluminum or copper or other metal such as a silver (Ag) nickel (Ni) film, or a plurality of metal films onto the surface of the electronic component, or a copper tape. Or a non-metallic conductive carbon tape attached to the surface of the electronic component. The masking layer 110 may further include an adhesive layer (not shown) to help flatten the attachment to the surface of the electronic component.
遮蔽層110至少覆蓋住電子元件106a/106b/106c之上表面與部份側表面以及部份疊層101。遮蔽層110雖然以一「層」表之,但實際上可以是不連續、離散的金屬圖案區塊,而非連續的薄膜層。一般來說,對應於不同電子元件,遮蔽層110包括不同圖案區塊,但該些圖案區塊的尺寸至少要大於其所對應覆蓋的電子元件,以期覆蓋至少其所對應的電子元件之上表面與部份側表面(甚或部份黏膠層表面)。換言之,遮蔽層110最好能夠完全地包覆電子元件106以提供電磁干擾屏蔽之功效,或至少能夠覆蓋其所對應的電子元件106之整個上表面與至少一側表面,以提供電磁干擾屏蔽之功效。此外,於其他實施例中,遮蔽層110可能具有不同圖案設計,端視所欲遮蔽之頻率而定。The shielding layer 110 covers at least the upper surface and the partial side surface of the electronic component 106a/106b/106c and the partial laminate 101. Although the masking layer 110 is represented by a "layer", it may actually be a discontinuous, discrete metal pattern block rather than a continuous film layer. In general, corresponding to different electronic components, the shielding layer 110 includes different pattern blocks, but the pattern blocks are at least larger than the corresponding electronic components, so as to cover at least the upper surface of the corresponding electronic components. With partial side surfaces (or even partial adhesive layer surfaces). In other words, the shielding layer 110 is preferably capable of completely covering the electronic component 106 to provide electromagnetic interference shielding, or at least cover the entire upper surface and at least one surface of the corresponding electronic component 106 to provide electromagnetic interference shielding. efficacy. Moreover, in other embodiments, the masking layer 110 may have a different pattern design depending on the frequency of the desired masking.
圖2A-2E是遮蔽層之部份所包含圖案區塊的上視示意圖範例,以顯示遮蔽層對應不同電子元件的不同圖案設計。參考圖2A所示之十字形金屬圖案210,虛線區標示出電子元件之上表面大小,而遮蔽層(十字形金屬圖案210)可完全包覆電子元件之上表面與四側邊表面。相對於圖2A,可見圖2B之金屬圖案210設計具有均勻分佈的孔洞21a,孔洞之形狀、尺寸與分佈密度等可視所欲遮蔽之頻率而更動。圖2C-2D之金屬圖案210設計具有等距分佈、交錯的網格狀間隙21b/21c,但兩者網格狀間隙設計排列不同。置於圖2E所示之T字形金屬圖案210乃是由等距分佈、交錯的網狀金屬條紋21d所構成(亦可視為具有棋盤狀空格),虛線區標示出電子元件之上表面大小,而T字形金屬圖案210可完全包覆電子元件之上表面與三個側邊表面。其中金屬條紋21d之寬度d與金屬條紋21d之間隔D之比例可視所欲遮蔽之頻率而更動設計。圖2A與圖2E或可視為兩種不同形狀與尺寸大小孔洞之設計。2A-2E are schematic top views of a pattern block included in a portion of the masking layer to show different pattern designs of the masking layer corresponding to different electronic components. Referring to the cross-shaped metal pattern 210 shown in FIG. 2A, the dotted line area indicates the size of the upper surface of the electronic component, and the shielding layer (the cross-shaped metal pattern 210) completely covers the upper surface and the four side surfaces of the electronic component. With respect to FIG. 2A, it can be seen that the metal pattern 210 of FIG. 2B is designed to have uniformly distributed holes 21a, and the shape, size, and distribution density of the holes can be changed by the frequency of the desired shielding. The metal pattern 210 of Figures 2C-2D is designed with equidistantly distributed, staggered grid-like gaps 21b/21c, but the grid-like gaps are designed differently. The T-shaped metal pattern 210 shown in FIG. 2E is composed of an equidistantly distributed, staggered mesh metal stripe 21d (which can also be regarded as having a checkerboard space), and the dotted line area indicates the surface size of the electronic component, and The T-shaped metal pattern 210 can completely cover the upper surface of the electronic component and the three side surfaces. The ratio of the width d of the metal stripe 21d to the spacing D of the stripe 21d can be more dynamically designed depending on the frequency of the desired shading. 2A and 2E can be viewed as two different shapes and sizes of holes.
此處,由於遮蔽層完全包覆電子元件之上表面與至少一個側邊表面,而提供電子元件良好之電磁干擾屏蔽效果,減少電子元件之電磁干擾。同時,遮蔽層之金屬材質也具有良好的導熱散熱效果,而作為散熱片之用。Here, since the shielding layer completely covers the upper surface of the electronic component and the at least one side surface, the electromagnetic interference shielding effect of the electronic component is provided, and the electromagnetic interference of the electronic component is reduced. At the same time, the metal material of the shielding layer also has a good heat dissipation and heat dissipation effect, and is used as a heat sink.
接著,請參考圖1C,進行一封膠製程而形成一封裝膠體120配置於疊層101與基板100之上,且包覆電子元件106(106a/106b/106c)、遮蔽層110與覆蓋至少一部份的黏膠層104。封膠製程中,一般會使用模型而便於特定位置注入封膠物質,而在封膠物質固化形成封膠體120後,再移除模型。封膠物質例如為熱固性聚合物、環氧基樹脂(epoxy resin)、聚醯亞胺(polyimide)或苯基環丁烯(benzocyclobutene,BCB)。Next, referring to FIG. 1C, a glue process is performed to form an encapsulant 120 disposed on the stack 101 and the substrate 100, and the electronic component 106 (106a/106b/106c), the shielding layer 110, and the covering layer are covered. Part of the adhesive layer 104. In the encapsulation process, the model is generally used to facilitate the injection of the encapsulant at a specific location, and after the encapsulant is solidified to form the encapsulant 120, the model is removed. The sealant is, for example, a thermosetting polymer, an epoxy resin, a polyimide or a benzocyclobutene (BCB).
接著,請參考圖1D,移除基板100後進行一切割製程修整疊層101使其側邊與封膠體120對齊,並將整體結構上下倒置,亦即,封膠體120位於下方,而介電薄膜102位於最上方。Next, referring to FIG. 1D, after removing the substrate 100, a dicing process trimming layer 101 is performed to align the sides thereof with the encapsulant 120, and the whole structure is inverted upside down, that is, the encapsulant 120 is located below, and the dielectric film is 102 is at the top.
參考圖1E,圖案化介電薄膜102與黏膠層104而形成包含開孔V的圖案化疊層101a,導線開孔V暴露出電子元件106之接觸端105。之後,於圖案化介電薄膜102a上形成導電圖案130並覆蓋開孔V而與電子元件106之接觸端105接觸;因此,不同電子元件之間可透過導電圖案130而相互電性連結。此處,圖案化疊層101a與導電圖案130可視為積層基板(built-up substrate)之一疊層。所謂疊層或積層基板,例如是兩層疊層、四層或八層疊層的印刷電路板基板。Referring to FIG. 1E, the dielectric film 102 and the adhesive layer 104 are patterned to form a patterned stack 101a including openings V that expose the contact ends 105 of the electronic components 106. Thereafter, the conductive pattern 130 is formed on the patterned dielectric film 102a and covers the opening V to be in contact with the contact end 105 of the electronic component 106. Therefore, the different electronic components can be electrically connected to each other through the conductive pattern 130. Here, the patterned laminate 101a and the conductive pattern 130 may be regarded as one of a laminate of a built-up substrate. The laminated or laminated substrate is, for example, a printed circuit board substrate of two laminated layers, four layers or eight laminated layers.
參考圖1F,於圖案化疊層101a與導電圖案130上形成另一圖案化疊層140與導電圖案150,作為積層基板(built-up substrate)之另一疊層。封膠體120與其包覆之電子元件以及其上的疊層結構101a/130/140/150共同構成電子元件封裝體10。此處,僅繪示出在封膠體120上形成兩層積層基板,但是,本發明之範圍並不限於此,而可重複數次前述步驟,形成多層積層基板。Referring to FIG. 1F, another patterned layer 140 and conductive pattern 150 are formed on the patterned layer stack 101a and the conductive pattern 130 as another layer of a built-up substrate. The encapsulant 120 constitutes the electronic component package 10 together with the coated electronic components and the laminated structures 101a/130/140/150 thereon. Here, only two layers of the laminated substrate are formed on the sealant 120. However, the scope of the present invention is not limited thereto, and the above steps may be repeated several times to form a multilayer laminated substrate.
圖3A至圖3E繪示依照本發明之另一實施例之一種電子元件封裝結構的製作流程剖面示意圖。3A-3E are schematic cross-sectional views showing a manufacturing process of an electronic component package structure according to another embodiment of the present invention.
請參考圖3A,提供一基板300,基板300可為一積層基板,其例如是一兩層積層的印刷電路板基板。基板300實際上可視為是所謂第一疊層,由第一介電層304、下方的第一金屬層302與上方的第二金屬層306交互疊合而成,並透過多個第一導通孔(vias) 308使上、下層之金屬層306、302電性連接。接著,依序將電子元件310面朝下(face-down)配置於基板300之上。電子元件310可透過覆晶接合技術而電性連接至基板300上。第一、第二金屬層302、306包括不同的線路圖案(wiring pattern)與接觸墊或銲墊。Referring to FIG. 3A, a substrate 300 is provided. The substrate 300 can be a laminate substrate, for example, a two-layer laminated printed circuit board substrate. The substrate 300 can be regarded as a so-called first stack, and the first dielectric layer 304, the lower first metal layer 302 and the upper second metal layer 306 are alternately stacked, and are transmitted through the plurality of first via holes. (vias) 308 electrically connects the upper and lower metal layers 306, 302. Next, the electronic component 310 is sequentially disposed on the substrate 300 face-down. The electronic component 310 can be electrically connected to the substrate 300 through a flip chip bonding technique. The first and second metal layers 302, 306 include different wiring patterns and contact pads or pads.
參考圖3B,提供具有第三金屬層312與第二介電層314之壓合層311。其中第三金屬層312可包括連續或離散的金屬圖案區塊,其位置對應於其下之電子元件310位置。接著,圖3C所示,利用熱壓合技術,將壓合層311壓合至第一疊層300上,而壓合過程中,由於第三金屬層312之金屬圖案區塊位置對應於電子元件310的位置,第三金屬層312會包覆電子元件310之上表面與側表面,甚至會覆蓋第一疊層300之第二金屬層306的一部份,而達到電性連接至第一疊層300(接地)。Referring to FIG. 3B, a laminate layer 311 having a third metal layer 312 and a second dielectric layer 314 is provided. The third metal layer 312 may include continuous or discrete metal pattern blocks having a position corresponding to the position of the electronic component 310 thereunder. Next, as shown in FIG. 3C, the pressing layer 311 is pressed onto the first laminate 300 by a thermal pressing technique, and the metal pattern block position of the third metal layer 312 corresponds to the electronic component during the pressing process. The position of the third metal layer 312 covers the upper surface and the side surface of the electronic component 310, and even covers a portion of the second metal layer 306 of the first laminate 300 to electrically connect to the first stack. Layer 300 (ground).
此實施例中,第三金屬層312可視為是電子元件之遮蔽層,完全包覆電子元件之上表面與至少一個側邊表面,而提供電子元件良好之電磁干擾屏蔽效果,減少電子元件之電磁干擾。此外,第三金屬層312覆蓋部份基板,而可直接接地。雖然,此實施例中繪示第三金屬層包覆基板上所有的電子元件,但是,亦可視製程或電子元件功能配置,而僅包覆某些特定電子元件。In this embodiment, the third metal layer 312 can be regarded as a shielding layer of the electronic component, completely covering the upper surface of the electronic component and the at least one side surface, thereby providing a good electromagnetic interference shielding effect of the electronic component and reducing the electromagnetic of the electronic component. interference. In addition, the third metal layer 312 covers a portion of the substrate and can be directly grounded. Although, in this embodiment, all of the electronic components on the third metal layer are coated on the substrate, the process or electronic component functional configuration may be used to cover only certain electronic components.
本案實施例在內埋電子元件的封裝製程中,壓合貼附金屬膜,使其內埋元件被金屬膜包覆,提供多重保護的功能。In the packaging process of the embedded electronic component, the metal film is pressed and attached, and the embedded component is covered by the metal film to provide multiple protection functions.
然後,參考圖3D,於第二介電層314中形成多個第二導通孔316,並於第二介電層314上形成第四金屬層318。第四金屬層318與第二金屬層306可透過第二導通孔316達到電性連接。第二介電層314、第四金屬層318與第二導通孔316構成所謂第二疊層320。Then, referring to FIG. 3D, a plurality of second via holes 316 are formed in the second dielectric layer 314, and a fourth metal layer 318 is formed on the second dielectric layer 314. The fourth metal layer 318 and the second metal layer 306 can be electrically connected through the second via 316. The second dielectric layer 314, the fourth metal layer 318 and the second via 316 form a so-called second stack 320.
第一、第二與第四金屬層之材質可以相同或不同,可包括銅、鋁或鎢。第三金屬層的材質例如是鋁或銅金屬。第一、第二介電層的材質可以相同或不同,可包括有機化合物,如聚醯亞胺(polyimide)、苯基環丁烯(benzocyclobutene,BCB)、聚亞芳香基醚(parylene)等聚合物。The materials of the first, second and fourth metal layers may be the same or different and may comprise copper, aluminum or tungsten. The material of the third metal layer is, for example, aluminum or copper metal. The materials of the first and second dielectric layers may be the same or different, and may include organic compounds, such as polyimide, benzocyclobutene (BCB), polyarylene ether (parylene), etc. Things.
參考圖3E,於第一金屬層302之銲墊302a上直接形成多個錫球(solder ball) 330。Referring to FIG. 3E, a plurality of solder balls 330 are directly formed on the pads 302a of the first metal layer 302.
圖4為本發明之又一實施例之一種電子元件封裝結構的剖面示意圖。請參考圖4,在本實施例中,電子元件封裝體40包括一基板400、多個電子元件410、一第一遮蔽層412、一間介電結構414、一金屬線路結構416、一第二遮蔽層418、一頂介電結構420以及多個導通孔422。基板400可為一積層基板,例如是一兩層積層的印刷電路板基板。電子元件410例如是一高功率晶片,而以覆晶方式與基板400連結。電子元件410配置於基板400的上表面或配置於間介電結構414的上表面。第一遮蔽層412配置於並覆蓋基板400的上表面,且覆蓋電子元件410的四個或至少一個側壁的部分或全部與/或上表面的部分或全部。第一遮蔽層412與第二遮蔽層418的材質皆可是例如銅、鋁或銅鋁合金,且第一遮蔽層412與第二遮蔽層418的材質可以相同也可以不同。第二遮蔽層418位於間介電結構414與金屬線路結構416上,包覆電子元件410的四個或至少一個側壁的部分或全部與/或上表面的部分或全部並覆蓋部份其下之金屬線路結構416。其中,第一、第二遮蔽層412、418與金屬線路結構416之間可進行絕緣處理以得到所需的電性連接功能。此外,形成於間介電結構414之多個導通孔422電性連結金屬線路結構416與基板400。視產品設計而定,第一或第二遮蔽層可接地。此外,本實施例之電子元件封裝體40更包括多個位於基板400之背表面的錫球424,其可作為與外界電性連接的接點。4 is a cross-sectional view showing an electronic component package structure according to still another embodiment of the present invention. Referring to FIG. 4 , in the embodiment, the electronic component package 40 includes a substrate 400 , a plurality of electronic components 410 , a first shielding layer 412 , a dielectric structure 414 , a metal wiring structure 416 , and a second The shielding layer 418, a top dielectric structure 420, and a plurality of vias 422. The substrate 400 can be a laminated substrate, such as a two-layer laminated printed circuit board substrate. The electronic component 410 is, for example, a high power wafer and is connected to the substrate 400 in a flip chip manner. The electronic component 410 is disposed on the upper surface of the substrate 400 or on the upper surface of the intermediate dielectric structure 414. The first shielding layer 412 is disposed on and covers the upper surface of the substrate 400 and covers part or all of the four or at least one sidewall of the electronic component 410 and/or a portion or all of the upper surface. The material of the first shielding layer 412 and the second shielding layer 418 may be, for example, copper, aluminum or copper aluminum alloy, and the materials of the first shielding layer 412 and the second shielding layer 418 may be the same or different. The second shielding layer 418 is located on the inter-dielectric structure 414 and the metal wiring structure 416, covering part or all of the four or at least one sidewall of the electronic component 410 and/or part or all of the upper surface and covering the portion thereof. Metal line structure 416. The first and second shielding layers 412, 418 and the metal wiring structure 416 may be insulated to obtain a desired electrical connection function. In addition, the plurality of vias 422 formed in the inter-dielectric structure 414 electrically connect the metal line structure 416 and the substrate 400. The first or second shielding layer can be grounded depending on the product design. In addition, the electronic component package 40 of the present embodiment further includes a plurality of solder balls 424 located on the back surface of the substrate 400, which can serve as contacts for electrical connection with the outside.
在本實施例之電子元件封裝體中,第一或第二遮蔽層可視為一電磁干擾屏蔽(EMI shield),可保護電子元件免於外來或內在輻射源的電磁干擾輻射。因此,相較於習知電子元件封裝體而言,本實施例之電子元件封裝體不需於封裝體外加一額外金屬罩板,而直接整合於封裝結構內部,不但製程簡便,更可提供一厚度較薄的封裝體。此外,針對多晶片封裝結構,此種設計更可提升電子元件封裝體電磁干擾屏蔽的效能。特別是,遮蔽層可選擇性覆蓋特定電子元件,或彈性設計多層遮蔽層以配合多層封裝結構,覆蓋不同層的電子元件,而加強電子元件封裝體特定區塊的電磁干擾屏蔽效能。In the electronic component package of the embodiment, the first or second shielding layer can be regarded as an EMI shield, which can protect the electronic component from electromagnetic interference radiation from an external or internal radiation source. Therefore, compared with the conventional electronic component package, the electronic component package of the embodiment does not need to be added with an additional metal cover plate outside the package, and is directly integrated into the package structure, which not only has a simple process, but also provides a A thinner package. In addition, for multi-chip package structures, this design can improve the performance of electromagnetic interference shielding of electronic component packages. In particular, the shielding layer can selectively cover specific electronic components, or elastically design multiple shielding layers to match the multi-layer packaging structure, covering different layers of electronic components, and enhancing the electromagnetic interference shielding effectiveness of specific blocks of the electronic component package.
在本實施例中,電子元件封裝體100可以是一堆疊式封裝結構或一部份系統級封裝(system-in-package)結構。In this embodiment, the electronic component package 100 can be a stacked package structure or a part of a system-in-package structure.
綜上所述,由於包覆於電子元件表面與側邊之遮蔽層可有效地遮蔽外界電磁干擾輻射,因此可提高本發明之晶片封裝體的電磁干擾屏蔽的效能。本發明之電子元件封裝體的製作方法,是在上模封膠之前或疊層壓合之間,將遮蔽層附著至電子元件的表面,故與目前既存的封裝製程相容。In summary, since the shielding layer covering the surface and the side of the electronic component can effectively shield the external electromagnetic interference radiation, the effectiveness of the electromagnetic interference shielding of the chip package of the present invention can be improved. The electronic component package of the present invention is fabricated by attaching the shielding layer to the surface of the electronic component before or during lamination, so that it is compatible with the existing packaging process.
以上實施例的設計在電子元件的上方或/及周圍覆蓋一金屬薄膜,使得電子元件受到金屬薄膜的包覆,進而產生電磁干擾屏蔽的效果,同時也可具有良好的導熱散熱效果。The design of the above embodiment covers a metal film above or/and around the electronic component, so that the electronic component is covered by the metal film, thereby generating an electromagnetic interference shielding effect, and also has a good heat dissipation effect.
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作些許之更動與潤飾,故本發明之保護範圍當視後附之申請專利範圍所界定者為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the invention, and any one of ordinary skill in the art can make some modifications and refinements without departing from the spirit and scope of the invention. The scope of the invention is defined by the scope of the appended claims.
10、40...電子元件封裝體10, 40. . . Electronic component package
100、300、400...基板100, 300, 400. . . Substrate
101、140、320...疊層101, 140, 320. . . Lamination
102...介電薄膜102. . . Dielectric film
104...黏膠層104. . . Adhesive layer
105...接觸端105. . . Contact end
106、106a、106b、106c、310、410...電子元件106, 106a, 106b, 106c, 310, 410. . . Electronic component
110...遮蔽層110. . . Masking layer
120...封膠體120. . . Sealant
130、150...導電圖案130, 150. . . Conductive pattern
210...金屬圖案210. . . Metal pattern
21a...孔洞21a. . . Hole
21b、21c...網狀空隙21b, 21c. . . Mesh gap
21d...網狀金屬條紋21d. . . Mesh metal stripe
302...第一金屬層302. . . First metal layer
302a...銲墊302a. . . Solder pad
304...第一介電層304. . . First dielectric layer
306...第二金屬層306. . . Second metal layer
308...第一導通孔308. . . First via
311...壓合層311. . . Press layer
312...第三金屬層312. . . Third metal layer
314...第二介電層314. . . Second dielectric layer
316...第二導通孔316. . . Second via
318...第四金屬層318. . . Fourth metal layer
412...第一遮蔽層412. . . First shielding layer
414...間介電結構414. . . Dielectric structure
416...金屬線路結構416. . . Metal circuit structure
418...第二遮蔽層418. . . Second shielding layer
420...頂介電結構420. . . Top dielectric structure
422...導通孔422. . . Via
330、424...錫球330, 424. . . Solder balls
V...開孔V. . . Opening
圖1A至圖1F繪示依照本發明之一實施例之一種電子元件封裝體的製作流程剖面示意圖。1A-1F are schematic cross-sectional views showing a manufacturing process of an electronic component package according to an embodiment of the invention.
圖2A-2E是遮蔽層之部份所包含圖案區塊的上視示意圖範例。2A-2E are schematic top views of a pattern block included in a portion of the masking layer.
圖3A至圖3E繪示依照本發明之另一實施例之一種電子元件封裝結構的製作流程剖面示意圖。3A-3E are schematic cross-sectional views showing a manufacturing process of an electronic component package structure according to another embodiment of the present invention.
圖4為本發明之又一實施例之一種電子元件封裝結構的剖面示意圖。4 is a cross-sectional view showing an electronic component package structure according to still another embodiment of the present invention.
40...電子元件封裝體40. . . Electronic component package
400...基板400. . . Substrate
410...電子元件410. . . Electronic component
412...第一遮蔽層412. . . First shielding layer
414...間介電結構414. . . Dielectric structure
416...金屬線路結構416. . . Metal circuit structure
418...第二遮蔽層418. . . Second shielding layer
420...頂介電結構420. . . Top dielectric structure
422...導通孔422. . . Via
424...錫球424. . . Solder balls
Claims (18)
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5838551A (en) * | 1996-08-01 | 1998-11-17 | Northern Telecom Limited | Electronic package carrying an electronic component and assembly of mother board and electronic package |
| US20090261460A1 (en) * | 2007-06-20 | 2009-10-22 | Stats Chippac, Ltd. | Wafer Level Integration Package |
| EP2141972A1 (en) * | 2007-05-02 | 2010-01-06 | Murata Manufacturing Co. Ltd. | Component-incorporating module and its manufacturing method |
| US7665201B2 (en) * | 2005-09-15 | 2010-02-23 | Infineon Technologies Ag | Method for manufacturing electronic modules |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5838551A (en) * | 1996-08-01 | 1998-11-17 | Northern Telecom Limited | Electronic package carrying an electronic component and assembly of mother board and electronic package |
| US7665201B2 (en) * | 2005-09-15 | 2010-02-23 | Infineon Technologies Ag | Method for manufacturing electronic modules |
| EP2141972A1 (en) * | 2007-05-02 | 2010-01-06 | Murata Manufacturing Co. Ltd. | Component-incorporating module and its manufacturing method |
| US20090261460A1 (en) * | 2007-06-20 | 2009-10-22 | Stats Chippac, Ltd. | Wafer Level Integration Package |
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