TWI471899B - Silver-based biphasic electrothermal resistance wire and manufacturing method thereof - Google Patents
Silver-based biphasic electrothermal resistance wire and manufacturing method thereof Download PDFInfo
- Publication number
- TWI471899B TWI471899B TW102128180A TW102128180A TWI471899B TW I471899 B TWI471899 B TW I471899B TW 102128180 A TW102128180 A TW 102128180A TW 102128180 A TW102128180 A TW 102128180A TW I471899 B TWI471899 B TW I471899B
- Authority
- TW
- Taiwan
- Prior art keywords
- silver
- phase
- wire
- layer
- baseline
- Prior art date
Links
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 title claims description 133
- 229910052709 silver Inorganic materials 0.000 title claims description 119
- 239000004332 silver Substances 0.000 title claims description 116
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 230000002051 biphasic effect Effects 0.000 title claims description 8
- 239000011651 chromium Substances 0.000 claims description 54
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 35
- 229910052782 aluminium Inorganic materials 0.000 claims description 35
- 239000002245 particle Substances 0.000 claims description 35
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 29
- 230000003647 oxidation Effects 0.000 claims description 29
- 238000007254 oxidation reaction Methods 0.000 claims description 29
- 229910052804 chromium Inorganic materials 0.000 claims description 28
- 238000010438 heat treatment Methods 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 14
- 230000003064 anti-oxidating effect Effects 0.000 claims description 13
- 229910001430 chromium ion Inorganic materials 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims 1
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 16
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 13
- 238000007747 plating Methods 0.000 description 11
- 229910045601 alloy Inorganic materials 0.000 description 8
- 239000000956 alloy Substances 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 229910052763 palladium Inorganic materials 0.000 description 7
- 229910000765 intermetallic Inorganic materials 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 229910052697 platinum Inorganic materials 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 238000004806 packaging method and process Methods 0.000 description 4
- 229910001316 Ag alloy Inorganic materials 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000006731 degradation reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 229910052703 rhodium Inorganic materials 0.000 description 3
- 239000010948 rhodium Substances 0.000 description 3
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 238000004383 yellowing Methods 0.000 description 3
- 229910000831 Steel Inorganic materials 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000011162 core material Substances 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000002401 inhibitory effect Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 150000002736 metal compounds Chemical class 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- NDVLTYZPCACLMA-UHFFFAOYSA-N silver oxide Chemical compound [O-2].[Ag+].[Ag+] NDVLTYZPCACLMA-UHFFFAOYSA-N 0.000 description 2
- 235000014347 soups Nutrition 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910052778 Plutonium Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- ZGUQGPFMMTZGBQ-UHFFFAOYSA-N [Al].[Al].[Zr] Chemical compound [Al].[Al].[Zr] ZGUQGPFMMTZGBQ-UHFFFAOYSA-N 0.000 description 1
- YVIMHTIMVIIXBQ-UHFFFAOYSA-N [SnH3][Al] Chemical compound [SnH3][Al] YVIMHTIMVIIXBQ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- KODMFZHGYSZSHL-UHFFFAOYSA-N aluminum bismuth Chemical compound [Al].[Bi] KODMFZHGYSZSHL-UHFFFAOYSA-N 0.000 description 1
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 description 1
- SNAAJJQQZSMGQD-UHFFFAOYSA-N aluminum magnesium Chemical compound [Mg].[Al] SNAAJJQQZSMGQD-UHFFFAOYSA-N 0.000 description 1
- FJMNNXLGOUYVHO-UHFFFAOYSA-N aluminum zinc Chemical compound [Al].[Zn] FJMNNXLGOUYVHO-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000005485 electric heating Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000037427 ion transport Effects 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- OYEHPCDNVJXUIW-UHFFFAOYSA-N plutonium atom Chemical compound [Pu] OYEHPCDNVJXUIW-UHFFFAOYSA-N 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- -1 silver ions Chemical class 0.000 description 1
- 229910001923 silver oxide Inorganic materials 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 230000003867 tiredness Effects 0.000 description 1
- 208000016255 tiredness Diseases 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 210000003462 vein Anatomy 0.000 description 1
- 238000004073 vulcanization Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electroplating Methods And Accessories (AREA)
- Conductive Materials (AREA)
Description
本發明係有關於一種耐電熱銀基雙相線及其製造方法,尤其是指一種適用於半導體封裝、IC封裝或發光二極體封裝之耐電熱銀基雙相線及其製造方法,藉由摻雜奈米純鋁粒進入銀線中,以及於銀基線表面鍍鉻層再熱處理之程序,形成具有Ag2 Cr及AgAl7 Cr相之銀基雙相線,達到提升銀基雙相線之抗氧化性與熱穩定性和保有優異耐熔斷電流之功效,同時以適當的熱處理條件控制殘留鍍鉻層,使其成為非鍍層之熱擴散線材,進而能有效抑制打線界面金屬間化合物生成厚度(例如Ag2 Al或Ag4 Al),並維持銀基雙相線迴路之低電阻特性者。The present invention relates to an electric heating-resistant silver-based two-phase wire and a manufacturing method thereof, and particularly to an electrothermal-resistant silver-based two-phase wire suitable for a semiconductor package, an IC package or a light-emitting diode package, and a manufacturing method thereof. The doped nano-aluminum particles enter the silver wire, and the chrome-plated layer on the surface of the silver is further heat-treated to form a silver-based two-phase line with Ag 2 Cr and AgAl 7 Cr phases, thereby increasing the resistance of the silver-based two-phase line. Oxidation and thermal stability and the ability to maintain excellent resistance to fusing current, while controlling the residual chrome plating layer under appropriate heat treatment conditions, making it a non-plated thermal diffusion wire, which can effectively suppress the thickness of intermetallic compound formation at the wire bonding interface (such as Ag). 2 Al or Ag 4 Al), and maintain the low resistance characteristics of the silver-based two-phase line circuit.
按,低電阻率是一般電子產品封裝導線的基本要求,而對於高速運作及高頻的積體電路元件而言(例如:高速放大器、震盪器、電源管理積體電路、以及高速通訊元件等),為了避免訊號延遲(signal delaying)及串音干擾(cross talk interference),對導線的電阻率要求更為嚴格;此外,為了確保產品在長時間及嚴苛條件下能夠維持正常壽命與功能(耐候性),可靠度的考量也極為重要;因此,封裝產業需要能夠兼顧低阻抗且高信賴的打線接合線材。According to the low electrical resistivity, it is a basic requirement for general electronic product packaging wires, and for high-speed operation and high-frequency integrated circuit components (such as high-speed amplifiers, oscillators, power management integrated circuits, and high-speed communication components, etc.) In order to avoid signal delaying and cross talk interference, the resistivity of the wire is more stringent; in addition, to ensure that the product can maintain normal life and function under long-term and severe conditions (weathering Sexuality, reliability considerations are also extremely important; therefore, the packaging industry needs to be able to combine low-impedance and high-reliability wire bonding wires.
目前常見的封裝導線,有金線、銅線、銀線、合金線等,以銀線為例,銀是在所有材料中電阻率最低的元素,然純銀線在鋁墊上打線接合時亦會生成脆性的界金屬化合物(Ag2 A l或Ag4 Al);此外,純銀線在含水氣的封裝材料內部很容易發生電解離子遷移現象(ion migration),亦即,純銀在含水氣環境會經由電流作用水解溶出銀離子,再與氧反應成為不穩定的氧化銀(AgO),此氧化銀因而會進行去氧化作用(deoxidize)形成銀原子,並向正極成長出樹葉紋理狀(leaf vein)的銀鬚,最後造成正負電極的短路;因此,目前純銀線並無法提供業界所需之成球性與穩定性;於是有業者以銀為主的合金線(例如包括銅、鉑、錳、鉻、金等元素)作為封裝導線,但所形成的線材仍無法兼具低阻抗及高可靠度的性質,亦即無法通過高溫氧化試驗,且無提升熔斷電流密度;舉例而言,請參閱中華民國發明專利公告第I394849所揭露之『銀基合金線材及其製造方法』,係提供一種銀基合金線材,其係至少由銀、鈀、鍺及鉑所形成之合金線材,藉著摻雜適量的鈀(Pd)有效提升銀線材的抗氧化及抗硫化腐蝕能力,同時由於其擴散速率極低以及表面生成物的阻隔性,可以避免銀的離子遷移問題,並對於銀與鋁墊的界面間金屬反應也有抑制效果;而適量的鍺(Ge)可以有效提升線材的抗氧化及硫化性,同時可以提高銲點的接合強度;另外,適量的鉑(Pt)可增強線材的抗氧化、硫化性及氯離子腐蝕性,並對於銀的離子遷移現象亦有明顯抑制效應,同時也減少銀合金線與鋁墊形成界金屬化合物;然,上述之銀基合金線材於製作時需精準地(ppm等級)調配鈀、鍺及鉑的組成比例,若摻雜鈀的含量過高時,則會造成合金線材的電阻升高,鍺的含量過高時,則會使線材延展性降低,而鉑的含量過高時,則會使線材的電阻率明顯提高,使得製造時欲維持可靠度的一致性相當不易;此外,上述線材亦無法通過高溫氧化試驗,且無提升熔斷電流密度之效應。At present, common package wires include gold wire, copper wire, silver wire, alloy wire, etc. Taking silver wire as an example, silver is the lowest resistivity element among all materials, and the pure silver wire is also generated when wire bonding is performed on the aluminum pad. Brittle boundary metal compounds (Ag 2 A l or Ag 4 Al); in addition, pure silver wires are prone to ion migration within the aqueous gas encapsulating material, that is, pure silver passes current in an aqueous gas environment. The action dissolves and dissolves the silver ions, and then reacts with oxygen to become unstable silver oxide (AgO), which deoxidizes to form silver atoms, and grows silver of leaf veins toward the positive electrode. It must cause a short circuit between the positive and negative electrodes; therefore, the current pure silver wire does not provide the spheroidality and stability required by the industry; therefore, there are silver-based alloy wires (including copper, platinum, manganese, chromium, gold, etc.). As an encapsulating wire, the formed wire still cannot have the properties of low impedance and high reliability, that is, it cannot pass the high temperature oxidation test, and there is no increase in the fusing current density; for example, please refer to The "silver-based alloy wire and its manufacturing method" disclosed in the Chinese Patent Publication No. I394849 discloses a silver-based alloy wire which is an alloy wire formed of at least silver, palladium, rhodium and platinum. The amount of palladium (Pd) is effective to improve the oxidation resistance and sulfur corrosion resistance of silver wire. At the same time, due to its extremely low diffusion rate and barrier properties of surface products, the ion migration of silver can be avoided, and for silver and aluminum pads. The interfacial metal reaction also has an inhibitory effect; and an appropriate amount of germanium (Ge) can effectively improve the oxidation resistance and vulcanization of the wire, and at the same time improve the joint strength of the solder joint; in addition, an appropriate amount of platinum (Pt) can enhance the oxidation resistance of the wire. Sulphide and chloride ion corrosive, and also have a significant inhibitory effect on the ion transport phenomenon of silver, and also reduce the formation of metal compounds between the silver alloy wire and the aluminum pad; however, the above-mentioned silver-based alloy wire needs to be accurately produced ( Ppm grade) is formulated with the composition ratio of palladium, rhodium and platinum. If the content of palladium is too high, the electrical resistance of the alloy wire will increase. If the content of plutonium is too high, it will cause The ductility of the material is lowered, and when the content of platinum is too high, the electrical resistivity of the wire is remarkably improved, so that it is not easy to maintain the consistency of reliability during manufacture; in addition, the wire cannot pass the high temperature oxidation test without improvement The effect of fusing current density.
此外,為了解決純銀接合線易氧化的問題,有業者提出於其表面鍍上其他金屬鍍層以改善易氧化及腐蝕的方法,請一併參閱新日鐵高新材料股份有限公司與日鐵微金屬股份有限公 司所申請一系列有關半導體裝置用合接線之中華民國發明專利,公告第I342809所揭露之『半導體裝置用合接線』、公告第I364806所揭露之『半導體裝置用合接線』、公告第I364806所揭露之『半導體用接合導線』、公開第201107499之『半導體用銅合金接合線』、公開第201140718之『半導體用銅接合線及其接合構造』以及公開第201230903之『複數層銅接合線的接合構造』;上述前案之接合線結構大抵皆係於一芯材(可為銅、金、銀等金屬所構成)表面設有一表皮層(可為鈀、釕、銠、鉑,以及銀所構成),導致上述之接合線於實際實施使用時常產生下述缺失:(a)因鍍金屬的線材其表面具有一表皮層,使得硬度偏高,且製程電流控制不易,常導致鍍層厚度不均,造成封裝過程整體產出率差、良率偏低;(b)銀或銀合金鍍上鈀層於燒球成型(electric frame off,EFO)時,因表面之鈀層使得成球(free air ball,FAB)之球心硬度過硬,造成銲球上方頸部之強度不足,於打線(wire bonding,WB)後,常發生頸部斷裂問題,進而導致接合界面剝離的問題發生;且鈀元素在銲球中也具偏析問題,該球部組織差異大影響打線條件;再者,該線材無法在高溫環境下維持表面抗氧化性,且成球時需要在有氣氛保護條下,否則無法成球打線。In addition, in order to solve the problem of easy oxidation of pure silver bonding wire, some companies have proposed to apply other metal plating on the surface to improve the oxidation and corrosion. Please refer to Nippon Steel High-tech Materials Co., Ltd. and Nippon Steel Micro Metals Co., Ltd. limited The company has applied for a series of inventions relating to the wiring of semiconductor devices, the invention patent of the Republic of China, the "connection wire for semiconductor devices" disclosed in the announcement No. I342809, the "connection wire for semiconductor devices" disclosed in the announcement No. I364806, and the disclosure of the publication No. I364806. "Semiconductor bonding wire", "Calcium bonding wire for semiconductors" of the publication No. 201107499, "Current bonding wire for semiconductors and bonding structure thereof" of the publication No. 201140718, and "Joining structure of a plurality of layers of copper bonding wires" The bonding wire structure of the above-mentioned previous case is generally attached to a core material (which may be composed of a metal such as copper, gold or silver) provided with a skin layer (which may be composed of palladium, rhodium, iridium, platinum, and silver). Therefore, the above-mentioned bonding wire often causes the following defects when it is actually used: (a) the metal-plated wire has a skin layer on its surface, so that the hardness is high, and the process current control is not easy, often resulting in uneven thickness of the plating layer, resulting in uneven thickness of the plating layer. The overall yield of the packaging process is poor, and the yield is low; (b) the palladium layer is plated with silver or silver alloy in the case of electric frame off (EFO), due to the surface palladium The core of the free air ball (FAB) is too hard, resulting in insufficient strength of the neck above the solder ball. After wire bonding (WB), the neck fracture problem often occurs, which leads to the problem of joint interface peeling. Occurs; and the palladium element also has a segregation problem in the solder ball, and the difference in the structure of the ball portion greatly affects the wire bonding condition; further, the wire cannot maintain the surface oxidation resistance in a high temperature environment, and the atmosphere protection strip is required when the ball is formed. Next, otherwise you can't make a ball.
此外,一般接合線材於打線後必須以熱固性塑料(例如環氧樹脂(EPOXY)加以封膠(Molding)保護;然,環氧樹脂材料於高溫或者長時間的二極體元件的點亮,會發生光劣化或黃變等問題,無法達到LED封裝產業製程可靠度的品質要求,且線材無法有效抑制負離子侵蝕表面和長時間高濕高熱環境的穩定度。In addition, the general bonding wire must be protected by a thermosetting plastic (for example, epoxy resin (EPOXY) after the wire is wired; however, the epoxy material may be lit at a high temperature or for a long time. Problems such as light degradation or yellowing cannot meet the quality requirements of the process reliability of the LED packaging industry, and the wire cannot effectively suppress the stability of the negative ion etching surface and the long-time high humidity and high heat environment.
今,發明人即是鑑於上述現有封裝用之銀基合金線材或接合線在實際實施上仍具有多處之缺失,於是乃一本孜孜不 倦之精神,並藉由其豐富之專業知識及多年之實務經驗所輔佐,而加以改善,並據此研創出本發明。Nowadays, the inventor is that in view of the above-mentioned existing silver-based alloy wire or bonding wire for packaging, there are still many defects in the actual implementation, so that it is not a The spirit of tiredness, and with the help of its rich professional knowledge and years of practical experience, has been improved and the invention has been developed accordingly.
本發明主要目的為提供一種耐電熱銀基雙相線及其製造方法,尤其是指一種藉由摻雜奈米純鋁粒進入銀線中,以及於銀基線表面鍍鉻層再熱處理之程序,於銀基線表面形成Ag2 Cr及AgAl7 Cr相,達到提升銀基雙相線之抗氧化性與熱穩定性之功效,同時以適當的熱處理條件控制殘留鍍鉻層,有效地抑制界面金屬間化合物生成厚度,進而維持銀基雙相線迴路低電阻特性。The main object of the present invention is to provide an electrothermal-resistant silver-based two-phase line and a manufacturing method thereof, in particular to a process for entering a silver wire by doping nano-pure aluminum particles and chrome plating on a silver base surface. Ag 2 Cr and AgAl 7 Cr phases are formed on the surface of the silver base to improve the oxidation resistance and thermal stability of the silver-based biphasic line. At the same time, the residual chromium plating layer is controlled by appropriate heat treatment conditions, and the intermetallic compound formation is effectively suppressed. The thickness, in turn, maintains the low resistance characteristics of the silver-based two-phase line loop.
為了達到上述實施目的,本發明人提出一種耐電熱銀基雙相線及其製造方法,其製造方法首先於一銀線中形成有不超過8wt.%之奈米鋁粒,較佳係為3wt.%~8wt.%之奈米鋁粒,並使該等鋁粒在銀基地中均勻分佈,使得銀線形成為一銀基線;其中上述鋁粒之粒徑係介於10~20nm之間;接著,於銀基線之表面鍍上一厚度係不小於32nm的鉻層,較佳係為32nm~106nm之間;最後,再將鍍有鉻層之銀基線進行熱處理,使鉻層之鉻離子進入銀基線基地,並於銀基線表面化合形成有一抗氧化層,其中抗氧化層包含有Ag2 Cr相或AgAl7 Cr相其中之一或兩者之組合,形成為一銀基雙相線;藉此,經熱處理化所形成之Ag2 Cr及AgAl7 Cr相,可提升本發明耐電熱銀基雙相線之抗氧化性,特別是高溫抗氧化性質,避免習知用以封膠接合線材之環氧樹脂材料因光熱劣化或黃變所產生之問題,且因銀基雙相線內部無異常粗大晶粒,具有高溫線材強度和接合界面強度不弱化之功效,亦提升其機械性質和熱穩定性。In order to achieve the above-mentioned object, the present inventors propose an electrothermal-resistant silver-based two-phase line and a method for producing the same, which are firstly formed in a silver wire with not more than 8 wt.% of nano-aluminum particles, preferably 3 wt. .%~8wt.% of nano-aluminum particles, and the aluminum particles are evenly distributed in the silver base, so that the silver wire is formed into a silver baseline; wherein the aluminum particles have a particle size of between 10 and 20 nm; a chromium layer having a thickness of not less than 32 nm is preferably plated on the surface of the silver base, preferably between 32 nm and 106 nm. Finally, the silver base plated with the chromium layer is heat-treated to cause the chromium ions of the chromium layer to enter the silver. a base base, and an anti-oxidation layer formed on the surface of the silver base, wherein the oxidation resistant layer comprises one or a combination of an Ag 2 Cr phase or an AgAl 7 Cr phase to form a silver-based two-phase line; The Ag 2 Cr and AgAl 7 Cr phases formed by heat treatment can improve the oxidation resistance of the electrothermal silver-based double-phase wire of the present invention, especially the high-temperature oxidation resistance property, and avoid the ring for sealing the bonding wire. Oxygen resin material due to photothermal degradation or yellowing, and due to silver base No abnormal internal phase of coarse grains, and has a high temperature strength of the wire strength of bonding interface does not weaken the effect, but also enhance its mechanical properties and thermal stability.
在本發明的一實施例中,於一銀線中形成奈米鋁粒之方法係將鋁粒加入銀熔湯中攪拌均勻混合,較佳地使用真空電磁進行攪拌。In an embodiment of the invention, the method of forming nano-aluminum grains in a silver wire is to add aluminum particles to the silver melt soup, stir and uniformly mix, preferably by vacuum electromagnetic stirring.
在本發明的一實施例中,熱處理係加熱至400~ 700℃之溫度,並持續該溫度不超過1小時,使得鉻層之鉻離子完全或部分進入銀基線基地,亦即殘留鍍鉻層之厚度係介於0~71nm之間;藉此,以適當的熱處理條件控制殘留鍍鉻層,使得於打線成球後,有效抑制界面金屬間化合物生成厚度,進而維持銀基雙相線迴路低電阻特性。In an embodiment of the invention, the heat treatment is heated to 400~ a temperature of 700 ° C, and the temperature is continued for less than 1 hour, so that the chromium ions of the chromium layer completely or partially enter the silver baseline base, that is, the thickness of the residual chromium plating layer is between 0 and 71 nm; thereby, with appropriate The heat treatment condition controls the residual chrome plating layer, so that the thickness of the interface intermetallic compound is effectively suppressed after the wire is formed into a ball, thereby maintaining the low resistance characteristic of the silver-based two-phase line circuit.
此外,本發明之耐電熱銀基雙相線因熱處理條件不同而具有兩種結構態樣;其一係包括一銀基線以及一包圍銀基線表面之抗氧化層,銀基線具有不超過8wt.%之奈米鋁粒,且抗氧化層包含有Ag2 Cr相或AgAl7 Cr相其中之一或兩者之組合;另一耐電熱銀基雙相線則包括有一銀基線、一包圍銀基線表面之抗氧化層,以及一包圍抗氧化層表面之鉻層。In addition, the electrothermal silver-based biphasic line of the present invention has two structural aspects due to different heat treatment conditions; the system includes a silver base line and an anti-oxidation layer surrounding the silver baseline surface, and the silver baseline has no more than 8 wt.%. Nano-aluminum particles, and the oxidation resistant layer comprises one or a combination of Ag 2 Cr phase or AgAl 7 Cr phase; another thermoelectric resistant silver-based biphasic line includes a silver baseline and a silver-containing baseline surface The anti-oxidation layer and a chromium layer surrounding the surface of the oxidation resistant layer.
(S1)‧‧‧步驟一(S1)‧‧‧Step one
(S2)‧‧‧步驟二(S2)‧‧‧Step 2
(S3)‧‧‧步驟三(S3) ‧ ‧ Step 3
第一圖:本發明較佳實施例之製造方法步驟流程圖第二圖:本發明其一具體實施例之銀基線於熱處理後,銀基線表面僅具有抗氧化層之顯微鏡組織圖第三圖:本發明其二具體實施例之銀基線於熱處理後,銀基線表面具有抗氧化層以及鉻層之顯微鏡組織圖【實施方式】本發明之目的及其結構功能上的優點,將依據以下圖面所示之結構,配合具體實施例予以說明,俾使審查委員能對本發明有更深入且具體之瞭解。The first figure is a flow chart of the manufacturing method of the preferred embodiment of the present invention. The second figure: the silver base line of the embodiment of the present invention has a microscope structure with only an anti-oxidation layer after the heat treatment. The silver base of the second embodiment of the present invention has a microstructure of the anti-oxidation layer and the chromium layer on the surface of the silver after heat treatment. [Embodiment] The object of the present invention and its structural and functional advantages will be based on the following drawings. The structure of the present invention will be described in conjunction with specific embodiments, so that the reviewing committee can have a deeper and more specific understanding of the present invention.
首先,本發明之耐電熱銀基雙相線係適用於半導體封裝、IC封裝、LED封裝等之電子工業零件之封裝導線;其具體實施例之製造方法係包括下列步驟,請參閱第一圖所示:步驟一(S1):係於一銀線中形成有不超過8wt.%之奈米鋁粒,並使該等鋁粒在銀基地中均勻分佈,藉由鋁金屬顆粒摻雜或添加以增加銀基線之強度,並保有其延展性,同時不降低熔斷電流密度;其中,步驟一(S1)可例如將不超過8wt.%的奈米鋁粒加入銀熔湯中並以真空電磁攪拌均勻混合
具體實施,以達到鋁粒於銀基地中均勻分佈功效,然其他各種將鋁基顆粒(例如鋁鋯顆粒、鋁鋅顆粒、鋁鎂顆粒、鋁銅顆粒、鋁錫顆粒,以及鋁矽顆粒等)或將鋁金屬滲入銀線中常見或創新的技術手段皆可以用於實作本發明,例如先於銀線表面鍍上鋁層,再經熱處理使鋁金屬滲入銀線中,在此步驟一(S1)之具體實施手段並不限定;此外,上述所添加之鋁粒之粒徑係介於10~20nm之間,且鋁粒添加量較佳係介於3wt.%~8wt.%之間;請參閱下表所示,其係於銀線(20μm)摻雜(添加)有分別為0、0.5wt.%、1wt.%、3wt.%、5wt.%、8wt.%以及10wt.%的奈米鋁粒,並於本發明步驟二(S2)和步驟三(S3)完成後所得之銀基雙相線在熔斷電流、拉伸強度以及延展性特性上的實驗數據表;可清楚得知,奈米鋁粒添加量直到8wt.%時,銀基雙相線的熔斷電流才會有顯著低落,且鋁粒添加量介於3wt.%~8wt.%之間的銀基雙相線在上述三種特性上具有較佳的平均表現;
步驟二(S2):接著,於上述銀基線之表面鍍上一厚度係不小於32nm的鉻層,藉以增加銀基線表面之抗氧化性;其中鉻層之厚度較佳係介於32nm~106nm之間;以及步驟三(S3):再將鍍有鉻層之銀基線進行熱處 理,使鉻層之鉻離子進入銀基線基地,並於銀基線之表面形成有一抗氧化層,其中抗氧化層包含有Ag2 Cr相或AgAl7 Cr相其中之一或兩者之組合,即形成為一銀基雙相線;值得注意的,Ag2 Cr相較佳係形成於抗氧化層之表面,而AgAl7 Cr相較佳係形成於抗氧化層之內部;此外,步驟三(S3)之熱處理具體實施方式係加熱至400~700℃之溫度,並持續該溫度不超過1小時;請參閱下表所示,其係以分別摻雜(添加)有3wt.%、5wt.%,以及8wt.%奈米鋁粒之銀基線(20μm),分別鍍上32nm、77nm,以及106nm的鉻層,並於本發明步驟三(S3)完成後所得之不同銀基雙相線在7天的大氣氧化試驗、24hr-120℃高溫氧化試驗以及熱處理(480℃-25min)後高溫氧化試驗上的實驗數據表;可清楚得知,鉻層之厚度至少需為32nm,才可藉表面熱處理化形成Ag2 Cr相及AgAl7 Cr,以提升銀基雙相線抗氧化性和熱穩定性,而當鉻層厚度超過106nm時,硬質鉻層與軟質銀基雙相線彼此延展性差異過大,使得抽線過程中表面易產生龜裂,且鉻層厚度大亦相對提高製程成本。Step 2 (S2): Next, a surface of the silver base is plated with a chromium layer having a thickness of not less than 32 nm, thereby increasing the oxidation resistance of the silver base surface; wherein the thickness of the chromium layer is preferably between 32 nm and 106 nm. And step 3 (S3): heat-treating the silver-plated base of the chromium layer to cause the chromium ions of the chromium layer to enter the silver baseline base, and forming an anti-oxidation layer on the surface of the silver base, wherein the anti-oxidation layer contains A combination of one or both of an Ag 2 Cr phase or an AgAl 7 Cr phase is formed as a silver-based two-phase line; notably, the Ag 2 Cr phase is preferably formed on the surface of the oxidation resistant layer, and AgAl 7 Preferably, the Cr phase is formed inside the oxidation resistant layer; in addition, the heat treatment of the third step (S3) is heated to a temperature of 400 to 700 ° C and continues for no more than 1 hour; It is doped (added) with a silver base (20 μm) of 3 wt.%, 5 wt.%, and 8 wt.% of nano aluminum particles, respectively, and plated with 32 nm, 77 nm, and 106 nm chromium layers, respectively. Inventive Step 3 (S3) after completion of the different silver-based two-phase line in 7 days of atmospheric oxidation test, 24hr-12 0 °C high temperature oxidation test and heat treatment (480 ° C -25 min) after the high temperature oxidation test experimental data table; it can be clearly seen that the thickness of the chromium layer must be at least 32 nm, can be surface heat treated to form Ag 2 Cr phase and AgAl 7 Cr, to improve the oxidation resistance and thermal stability of the silver-based two-phase line, and when the thickness of the chromium layer exceeds 106 nm, the ductile difference between the hard chromium layer and the soft silver-based two-phase line is too large, so that the surface is easy to be drawn during the drawing process. Cracks are generated, and the thickness of the chrome layer is relatively high, which also increases the process cost.
再請參閱下表所示,其係以上表鍍上32nm、77nm,以及106nm鉻層之銀基雙相線(20μm)分別於(480℃-25min)與(630℃-25min)的熱處理條件下進行打線成球後,對打線成球性(EFO)、打線接合強 度(gf)、打線接點崩潰電壓(v),以及界面金屬間化合物厚度所量測之實驗數據表;可明顯得知,當熱處理之溫度越高,銀基雙相線所殘留之鉻層愈薄,進而可有效抑制打線接合界面金屬間化合物生成厚度,亦即在高熱的環境下亦不會誘生界面化合物急速成長,使得本發明之銀基雙相線能具有可維持迴路低電阻特性之功效;此外,成球性(真圓度)和打線接合強度亦符合電子工業零件之封裝導線品質要求;再者,於常溫拉伸強度與高溫(120℃)拉伸強度之試驗,可看出本發明之耐電熱銀基雙相線平均約具有大於6gf之特性,與一般銀合金線常溫拉伸強度約在3~5gf,且幾乎無高溫拉伸強度,均低於1gf比較下,具有相當明顯之差異;在此值得注意的,本發明之耐電熱銀基雙相線其熱處理後之鉻層厚度較佳係介於0~71nm之間,亦即鉻層之鉻離子可完全或部分進入銀基雙相線基地,使得銀基雙相線可因熱處理的條件產生兩種結構態樣,其一係包括一銀基線以及一包圍銀基線表面之抗氧化層,銀基線具有不超過8wt.%之奈米鋁粒,且抗氧化層包含有Ag2 Cr相或AgAl7 Cr相其中之一或兩者之組合,請參閱第二圖所示,為本發明其一具體實施例之銀基線於熱處理後,銀基線表面僅具有抗氧化層之顯微鏡組織圖;而另一耐電熱銀基雙相線則包括有一銀基線、一包圍銀基線表面之抗氧化層,以及一包圍抗氧化層表面之鉻層,請參閱第三圖所示,為本發明其二具體實施例之銀基線於熱處理後,銀基線表面具有抗氧化層以及鉻層之顯微鏡組織圖。Referring again to the table below, the above table is plated with 32nm, 77nm, and 106nm chromium layer of silver-based two-phase line (20μm) under heat treatment conditions (480 ° C -25 min) and (630 ° C -25 min) After the wire is formed into a ball, the experimental data table for the wire bonding (EFO), the wire bonding strength (gf), the wire contact breakdown voltage (v), and the interface intermetallic compound thickness are measured; it is obvious that When the temperature of the heat treatment is higher, the thinner the chromium layer remaining in the silver-based two-phase line, the thickness of the intermetallic compound in the wire bonding interface can be effectively suppressed, that is, the interface compound does not induce rapid growth in a high heat environment. The silver-based two-phase wire of the invention can have the effect of maintaining the low resistance characteristic of the circuit; in addition, the sphericity (roundness) and the wire bonding strength also meet the package wire quality requirements of the electronic industry parts; The tensile strength and the high temperature (120 ° C) tensile strength test, it can be seen that the electrothermal silver-based biphasic line of the present invention has an average of about 6 gf, and the normal silver alloy wire has a tensile strength of about 3 to 5 gf at room temperature. And almost no high temperature tensile strength, Compared with the comparison of 1gf, there is a considerable difference; it is worth noting that the thickness of the chromium layer after heat treatment of the electrothermal silver-based two-phase line of the present invention is preferably between 0 and 71 nm, that is, the chromium layer. The chromium ions can enter the silver-based two-phase line base completely or partially, so that the silver-based two-phase line can produce two structural forms due to the heat treatment conditions, one of which includes a silver baseline and an anti-oxidation layer surrounding the silver baseline surface. The silver base has no more than 8 wt.% of nano aluminum particles, and the oxidation resistant layer comprises one or a combination of Ag 2 Cr phase or AgAl 7 Cr phase, please refer to the second figure, which is the present invention. The silver base of one embodiment is after heat treatment, the silver baseline surface only has a microscopic organization chart of the anti-oxidation layer; and the other electrothermal silver-based biphasic line includes a silver base line and an anti-oxidation layer surrounding the silver baseline surface. And a chrome layer surrounding the surface of the anti-oxidation layer, as shown in the third figure, the silver baseline of the second embodiment of the present invention has a microstructure of the anti-oxidation layer and the chromium layer on the surface of the silver after heat treatment.
由上述之實施說明可知,本發明與現有技術相較之下,本發明具有以下優點:It can be seen from the above description that the present invention has the following advantages compared with the prior art:
1.本發明藉由摻雜(添加)奈米純鋁粒進入銀線中,使其在基地中均佈,不僅可增加銀基線之強度,亦保有延展性;此外,藉由鍍鉻層於銀基線表面,經熱處理化形成Ag2 Cr及AgAl7 Cr相,進而可提升抗氧化性,避免習知用以封膠接合線材之環氧樹脂材料因光熱劣化或黃變所產生之問題,且因銀基雙相線內部無異常粗大晶粒,亦提升本發明銀基雙相線之熱穩定性。1. The present invention by doping (adding) nano-pure aluminum particles into the silver wire, so that it is evenly distributed in the base, not only can increase the strength of the silver base line, but also maintain ductility; in addition, by chrome plating in silver The surface of the base layer is heat-treated to form Ag 2 Cr and AgAl 7 Cr phases, which can improve the oxidation resistance and avoid the problems caused by photothermal degradation or yellowing of the epoxy resin material used for sealing the bonding wires. The silver-based two-phase line has no abnormal coarse grains inside, and also improves the thermal stability of the silver-based two-phase line of the present invention.
2.本發明藉由適當的熱處理條件控制殘留鍍鉻層,使得於打線成球後,可有效抑制界面金屬間化合物生成厚度(例如Ag2 Al或Ag4 Al),進而維持銀基雙相線迴路低電阻特性。2. The present invention controls the residual chrome plating layer by appropriate heat treatment conditions, so that the thickness of the interface intermetallic compound (for example, Ag 2 Al or Ag 4 Al) can be effectively suppressed after the wire is formed into a ball, thereby maintaining the silver-based two-phase line circuit. Low resistance characteristics.
綜上所述,本發明之耐電熱銀基雙相線及其製造方法,的確能藉由上述所揭露之實施例,達到所預期之使用功效,且本發明亦未曾公開於申請前,誠已完全符合專利法之規定與要求。爰依法提出發明專利之申請,懇請惠予審查,並賜准專利, 則實感德便。In summary, the electrothermal silver-based dual-phase line of the present invention and the method for manufacturing the same can achieve the intended use efficiency by the above-disclosed embodiments, and the present invention has not been disclosed before the application. Full compliance with the requirements and requirements of the Patent Law.提出Apply for an invention patent in accordance with the law, please submit a review and grant a patent. It is really sensible.
惟,上述所揭之圖示及說明,僅為本發明之較佳實施例,非為限定本發明之保護範圍;大凡熟悉該項技藝之人士,其所依本發明之特徵範疇,所作之其它等效變化或修飾,皆應視為不脫離本發明之設計範疇。The illustrations and descriptions of the present invention are merely preferred embodiments of the present invention, and are not intended to limit the scope of the present invention; those skilled in the art, which are characterized by the scope of the present invention, Equivalent variations or modifications are considered to be within the scope of the design of the invention.
(S1)‧‧‧步驟一(S1)‧‧‧Step one
(S2)‧‧‧步驟二(S2)‧‧‧Step 2
(S3)‧‧‧步驟三(S3) ‧ ‧ Step 3
Claims (8)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW102128180A TWI471899B (en) | 2013-08-06 | 2013-08-06 | Silver-based biphasic electrothermal resistance wire and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW102128180A TWI471899B (en) | 2013-08-06 | 2013-08-06 | Silver-based biphasic electrothermal resistance wire and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201401335A TW201401335A (en) | 2014-01-01 |
| TWI471899B true TWI471899B (en) | 2015-02-01 |
Family
ID=50345127
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102128180A TWI471899B (en) | 2013-08-06 | 2013-08-06 | Silver-based biphasic electrothermal resistance wire and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TWI471899B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI500776B (en) * | 2015-01-07 | 2015-09-21 | Truan Sheng Lui | Composition of uncoated aluminum based wire having abrasion resistance and high strength and method for manufacturing the same |
-
2013
- 2013-08-06 TW TW102128180A patent/TWI471899B/en active
Non-Patent Citations (1)
| Title |
|---|
| M. Venkatraman et. al., "The Ag-Cr system", Bulletin of Alloy Phase Duagrams, Vol. 11, No. 3, 1990, pp. 263-265. * |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201401335A (en) | 2014-01-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5616165B2 (en) | Silver bonding wire | |
| TW201336599A (en) | Composite wire coated with metal film on silver-palladium alloy surface and manufacturing method thereof | |
| TWI394849B (en) | Silver-based alloy wire and manufacturing method thereof | |
| TW201336598A (en) | Composite wire coated with metal film on silver-gold-palladium alloy surface and preparation method thereof | |
| TWI403596B (en) | Copper alloy wire for semiconductor packaging | |
| CN104009015B (en) | Silver alloy soldering wires for semiconductor packaging | |
| CN106992164B (en) | Copper alloy single crystal bonding wire for microelectronic packaging and preparation method thereof | |
| CN104419843B (en) | Electrothermal resistant silver-based duplex wire and its manufacturing method | |
| CN107240551A (en) | A kind of preparation method of silver alloy bonding wire | |
| JP5866075B2 (en) | Bonding material manufacturing method, bonding method, and power semiconductor device | |
| TWI471899B (en) | Silver-based biphasic electrothermal resistance wire and manufacturing method thereof | |
| WO2013099413A1 (en) | Semiconductor device connection high purity copper fine wire | |
| CN103842529B (en) | Gold (Au) alloy bonding wire | |
| CN102312120A (en) | Electromigration-resistant silver-indium alloy bonding wire and preparation method thereof | |
| TWI559417B (en) | Power module package connecting line and manufacturing method thereof | |
| TW200949861A (en) | Conductive paste composition | |
| CN104299954B (en) | A kind of copper cash for semiconductor welding | |
| TWI429769B (en) | Palladium mesh alloy wire without plating thereon and method manufacturing the same | |
| JP5545234B2 (en) | Semiconductor device and manufacturing method thereof | |
| TWI396756B (en) | Electronic package alloy wire and manufacturing method thereof | |
| CN103824833A (en) | Copper alloy wire for semiconductor package | |
| CN104752385B (en) | A kind of IC package ultra-soft bonding wire and its manufacture method | |
| CN104218012A (en) | Metal bonding wire and manufacturing method thereof | |
| TWI796739B (en) | Alloy bonding wire | |
| TWI778583B (en) | Silver alloy wire |