TWI469364B - A solar cell - Google Patents
A solar cell Download PDFInfo
- Publication number
- TWI469364B TWI469364B TW98121385A TW98121385A TWI469364B TW I469364 B TWI469364 B TW I469364B TW 98121385 A TW98121385 A TW 98121385A TW 98121385 A TW98121385 A TW 98121385A TW I469364 B TWI469364 B TW I469364B
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- Prior art keywords
- substrate
- solar cell
- cell structure
- recessed
- disposed
- Prior art date
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- 239000000758 substrate Substances 0.000 claims description 31
- 230000002093 peripheral effect Effects 0.000 claims description 5
- 230000003667 anti-reflective effect Effects 0.000 claims description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 4
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims 1
- 230000017525 heat dissipation Effects 0.000 description 10
- 230000000694 effects Effects 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000007246 mechanism Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 230000031700 light absorption Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Photovoltaic Devices (AREA)
Description
本發明係有關於一種太陽能電池結構，尤指涉及一種具高結構強度與低成本且光子吸收乃先短波長再長波長之反應機制者，特別係指光吸收作用區與散熱底座直接貼近而有極佳之散熱效果，可易於製造並具高產量之太陽能電池結構者。The invention relates to a solar cell structure, in particular to a reaction mechanism with high structural strength and low cost and photon absorption is a short wavelength and a long wavelength, in particular, the light absorption area is directly adjacent to the heat dissipation base. Excellent heat dissipation, easy to manufacture and high-yield solar cell structure.
一般傳統上太陽能電池結構，如第4圖所示，係採用厚層基板6作為支撐元件結構，包括有一配置於該基板6上方之至少一部分上之第一歐姆電極7、一配置於該基板6上方之至少一部分上之抗反射層8、以及一配置於該基板6下方之第二歐姆電極9。其中，該結構於光吸收作用區對光子吸收係為先短波長再長波長之反應機制者。Generally, a solar cell structure, as shown in FIG. 4, uses a thick substrate 6 as a supporting element structure, and includes a first ohmic electrode 7 disposed on at least a portion of the substrate 6 and a substrate 6 disposed thereon. An anti-reflection layer 8 on at least a portion of the upper portion and a second ohmic electrode 9 disposed under the substrate 6. Wherein, the structure is a reaction mechanism for the photon absorption system to be a short wavelength and a long wavelength in the light absorption region.
然而，上述結構雖使用厚度較厚之基板達到支撐元件結構，惟其散熱效果差；若以減少該基板厚度而達到增加結構之散熱效果，則需要以額外之厚度來支撐元件結構，例如，在晶圓打線鍵結過程中，礙於使用薄層之基板其本身結構性弱，因此另需鍵結一基材以達增強結構性後再於最後移除之，不僅製程處理複雜，且花費時間亦長，造成成本相對較高，且產量亦低，實難以供業界做大量生產之用。此外，由於此種結構散熱效果差，致使整體元件溫度難以發散，特別係當操作在高聚光照射下，熱量內積迫使溫度升高之情形將更加嚴重，進而導致元件性能降低，甚而縮短使用壽命。故，一般習用者係無法符合使用者於實際使用時之所需。However, although the above structure uses a thicker substrate to achieve the support element structure, the heat dissipation effect is poor; if the thickness of the substrate is reduced to increase the heat dissipation effect of the structure, the additional structure is required to support the element structure, for example, in the crystal. In the process of round wire bonding, the substrate with a thin layer is inherently weak in structure, so it is necessary to bond a substrate to enhance the structure and then remove it at the end, which is not only complicated in process processing, but also takes time. Long, resulting in relatively high costs, and low output, it is difficult for the industry to do mass production. In addition, due to the poor heat dissipation effect of such a structure, the temperature of the whole component is difficult to diverge, especially when the operation is under high concentration light, the heat inner product forces the temperature to rise, which is more serious, which leads to a decrease in component performance and even a shortened service life. Therefore, the general practitioners cannot meet the needs of the user in actual use.
本發明之主要目的係在於，克服習知技藝所遭遇之上述問題並提供一種可使光吸收作用區與散熱底座直接貼近而有極佳之散熱效果，且光子吸收反應機制乃短先波長再長波長，為具有高結構強度、製程簡易及成本低，並可適合大量生產而有高產量輸出之結構者。The main object of the present invention is to overcome the above problems encountered in the prior art and to provide an excellent heat dissipation effect by directly contacting the light absorbing action zone and the heat sink base, and the photon absorption reaction mechanism is short and the wavelength is long. The wavelength is a structure which has high structural strength, simple process and low cost, and is suitable for mass production and high output output.
為達以上之目的，本發明係一種太陽能電池結構，係包括一基板、一配置於該基板第一表面之至少一部分上之第一歐姆電極、一配置於該基板第一表面之至少一部分上之抗反射層、以及一配置於該基板第二表面上之第二歐姆電極所組成。上述基板係具有一第一表面及一第二表面，且於該基板第一表面處係具有一方形或圓形柱狀之凹槽孔洞，並於該凹槽孔洞內周面設有一中央凹槽及一設於其外周面圍繞該中央凹槽之凹槽側壁，其中每一凹槽孔洞之中央凹槽之尺度係小於每一凹槽孔洞開口之尺度，且每一凹槽孔洞之凹陷深度係介於20~500微米(μm)之間。For the purpose of the above, the present invention is a solar cell structure comprising a substrate, a first ohmic electrode disposed on at least a portion of the first surface of the substrate, and a first ohmic electrode disposed on at least a portion of the first surface of the substrate An anti-reflection layer and a second ohmic electrode disposed on the second surface of the substrate. The substrate has a first surface and a second surface, and has a square or circular column-shaped groove hole at the first surface of the substrate, and a central groove is formed on the inner circumferential surface of the groove hole. And a sidewall of the groove surrounding the central groove on the outer peripheral surface thereof, wherein the dimension of the central groove of each groove hole is smaller than the dimension of the opening of each groove hole, and the depth of the recess of each groove hole is Between 20 and 500 microns (μm).
請參閱『第1圖』所示，係本發明之結構剖面示意圖。如圖所示：本發明係一種太陽能電池結構，其特徵在於可使光吸收作用區直接貼近散熱底座並具有高結構強度者，係包括有一基板1、一第一歐姆電極2、一抗反射層3及一第二歐姆電極4所組成。Please refer to FIG. 1 for a schematic cross-sectional view of the structure of the present invention. As shown in the figure: the present invention is a solar cell structure characterized in that the light absorbing active region is directly adjacent to the heat dissipating base and has high structural strength, and includes a substrate 1, a first ohmic electrode 2, and an anti-reflection layer. 3 and a second ohmic electrode 4 are composed.
上述基板1係具有一第一表面11及一相對該第一表面 11之第二表面12，且於該基板1第一表面11處係具有一柱狀之凹槽孔洞13，並於該凹槽孔洞13內周面設有一中央凹槽131及一設於其外周面圍繞該中央凹槽131之凹槽側壁132，其中每一凹槽孔洞13之中央凹槽131之尺度係小於每一凹槽孔洞13開口之尺度，且每一凹槽孔洞13之凹陷深度係介於20~500微米(μm)之間。The substrate 1 has a first surface 11 and a first surface opposite to the first surface The second surface 12 of the first surface 11 of the substrate 1 has a column-shaped recessed hole 13 and a central recess 131 is disposed on the inner peripheral surface of the recessed hole 13 and a peripheral portion is disposed on the outer periphery of the recessed hole 13 The groove surrounds the groove sidewall 132 of the central groove 131, wherein the dimension of the central groove 131 of each groove hole 13 is smaller than the dimension of the opening of each groove hole 13, and the groove depth of each groove hole 13 is Between 20 and 500 microns (μm).
該第一歐姆電極2係配置於該基板1之第一表面11及其凹槽側壁132與至少一部分之中央凹槽131上。The first ohmic electrode 2 is disposed on the first surface 11 of the substrate 1 and the groove sidewall 132 thereof and at least a portion of the central groove 131.
該抗反射層3係配置於該基板1第一表面11之至少一部分之凹槽孔洞13上，用以減少入射光線的反射損失。The anti-reflection layer 3 is disposed on the recessed holes 13 of at least a portion of the first surface 11 of the substrate 1 for reducing reflection loss of incident light.
該第二歐姆電極4係配置於該基板1第二表面12上。以上所述，係構成一全新之太陽能電池結構。The second ohmic electrode 4 is disposed on the second surface 12 of the substrate 1. As described above, it constitutes a brand new solar cell structure.
請參閱『第2圖及第3圖』所示，係分別為本發明一較佳實施例之仰側結構剖面示意圖、及本發明之另一較佳實施例之仰側結構剖面示意圖。如圖所示：上述太陽能電池結構，當本發明於運用時，於一較佳實施例中，該基板係可選自矽(Si)、鍺(Ge)、砷化鎵(GaAs)、氮化鎵(GaN)或磷化銦(InP)其中之一，而該凹槽孔洞13係可形成為方形柱狀者，如第3圖所示，於其中每一凹槽孔洞13之中央凹槽之長寬尺度51、52係小於每一凹槽孔洞13開口之長寬尺度53、54；另外，該凹槽孔洞13亦可形成為圓形柱狀者，如第4圖所示，則其中每一凹槽孔洞13之中央凹槽之直徑尺度55係小於每一凹槽孔洞13開口之直徑尺度56。Please refer to FIG. 2 and FIG. 3, which are schematic cross-sectional views of the underside structure of a preferred embodiment of the present invention, and a schematic cross-sectional view of the underside structure of another preferred embodiment of the present invention. As shown in the figure: the solar cell structure described above, when the invention is in use, in a preferred embodiment, the substrate may be selected from the group consisting of germanium (Si), germanium (Ge), gallium arsenide (GaAs), and nitridation. One of gallium (GaN) or indium phosphide (InP), and the recessed holes 13 can be formed into a square column shape, as shown in FIG. 3, in the central groove of each of the groove holes 13 The length and width dimensions 51, 52 are smaller than the length and width dimensions 53 and 54 of the opening of each of the groove holes 13; in addition, the groove holes 13 may also be formed into a circular column shape, as shown in Fig. 4, The diameter dimension 55 of the central recess of a recessed aperture 13 is less than the diameter dimension 56 of the opening of each recessed aperture 13.
藉此，由於光吸收作用區與散熱底座直接貼近，因此可具有極佳之散熱效果；再者，本發明相較於傳統之結構，不僅具 有厚之晶片厚度，可支撐元件結構，亦無額外鍵結基材增加厚度之需要，且本結構光吸作作用區之光子吸收波長乃為一先短波長再長波長之反應機制者，故本發明係具有製程簡易及成本低，可適合大量生產進而有高產量輸出之結構。Thereby, since the light absorbing action area is directly adjacent to the heat dissipation base, the heat dissipation effect can be excellent; further, the present invention has more than the conventional structure. There is a thick wafer thickness, which can support the structure of the element, and there is no need to additionally bond the substrate to increase the thickness, and the photon absorption wavelength of the light absorption region of the structure is a reaction mechanism of a short wavelength and a long wavelength. The invention has the advantages of simple process and low cost, and can be suitable for mass production and high output output.
綜上所述，本發明係一種太陽能電池結構，可有效改善習用之種種缺點，係可使光吸收作用區與散熱底座直接貼近而有極佳之散熱效果，且光子吸收反應機制乃先短波長再長波長，為具有高結構強度、製程簡易及成本低，並可適合大量生產而有高產量輸出之結構者，進而使本發明之產生能更進步、更實用、更符合使用者之所須，確已符合創作專利申請之要件，爰依法提出專利申請。In summary, the present invention is a solar cell structure, which can effectively improve various shortcomings of the conventional use, and can directly contact the light absorption area and the heat dissipation base to have an excellent heat dissipation effect, and the photon absorption reaction mechanism is short wavelength first. The long wavelength is a structure with high structural strength, simple process and low cost, and can be suitable for mass production and high output output, so that the invention can be more advanced, more practical and more suitable for users. It has indeed met the requirements for the creation of a patent application, and has filed a patent application in accordance with the law.
惟以上所述者，僅為本發明之較佳實施例而已，當不能以此限定本發明實施之範圍；故，凡依本發明申請專利範圍及新型說明書內容所作之簡單的等效變化與修飾，皆應仍屬本發明專利涵蓋之範圍內。However, the above is only the preferred embodiment of the present invention, and the scope of the present invention is not limited thereto; therefore, the simple equivalent changes and modifications made in accordance with the scope of the present invention and the contents of the novel specification All should remain within the scope of the invention patent.
1‧‧‧基板1‧‧‧Substrate
11‧‧‧第一表面11‧‧‧ first surface
12‧‧‧第二表面12‧‧‧ second surface
13‧‧‧凹槽孔洞13‧‧‧ Groove holes
131‧‧‧中央凹槽131‧‧‧Central groove
132‧‧‧凹槽側壁132‧‧‧ Groove sidewall
2‧‧‧第一歐姆電極2‧‧‧First ohmic electrode
3‧‧‧抗反射層3‧‧‧Anti-reflective layer
4‧‧‧第二歐姆電極4‧‧‧Second ohmic electrode
51、52‧‧‧長寬尺度51, 52‧‧ ‧ length and width scale
53、54‧‧‧長寬尺度53, 54‧‧ ‧ length and width scale
55‧‧‧直徑尺度55‧‧‧diameter scale
56‧‧‧直徑尺度56‧‧‧diameter scale
6‧‧‧厚層基板6‧‧‧ Thick substrate
7‧‧‧第一歐姆電極7‧‧‧First ohmic electrode
8‧‧‧抗反射層8‧‧‧Anti-reflective layer
9‧‧‧第二歐姆電極9‧‧‧Second ohmic electrode
第1圖，係本發明之結構剖面示意圖。Fig. 1 is a schematic cross-sectional view showing the structure of the present invention.
第2圖，係本發明一較佳實施例之仰側結構剖面示意圖。Fig. 2 is a schematic cross-sectional view showing a structure of a back side of a preferred embodiment of the present invention.
第3圖，係本發明之另一較佳實施例之仰側結構剖面示意圖。Figure 3 is a cross-sectional view showing the structure of the underside of another preferred embodiment of the present invention.
第4圖，係傳統之太陽能電池結構示意圖。Figure 4 is a schematic diagram of a conventional solar cell structure.
1‧‧‧基板1‧‧‧Substrate
11‧‧‧第一表面11‧‧‧ first surface
12‧‧‧第二表面12‧‧‧ second surface
13‧‧‧凹槽孔洞13‧‧‧ Groove holes
131‧‧‧中央凹槽131‧‧‧Central groove
132‧‧‧凹槽側壁132‧‧‧ Groove sidewall
2‧‧‧第一歐姆電極2‧‧‧First ohmic electrode
3‧‧‧抗反射層3‧‧‧Anti-reflective layer
4‧‧‧第二歐姆電極4‧‧‧Second ohmic electrode
Claims (6)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW98121385A TWI469364B (en) | 2009-06-25 | 2009-06-25 | A solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW98121385A TWI469364B (en) | 2009-06-25 | 2009-06-25 | A solar cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201101502A TW201101502A (en) | 2011-01-01 |
| TWI469364B true TWI469364B (en) | 2015-01-11 |
Family
ID=44837029
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW98121385A TWI469364B (en) | 2009-06-25 | 2009-06-25 | A solar cell |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TWI469364B (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200830567A (en) * | 2006-11-20 | 2008-07-16 | Lg Chemical Ltd | Solar cell and method for manufacturing the same |
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2009
- 2009-06-25 TW TW98121385A patent/TWI469364B/en not_active IP Right Cessation
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200830567A (en) * | 2006-11-20 | 2008-07-16 | Lg Chemical Ltd | Solar cell and method for manufacturing the same |
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|---|---|
| TW201101502A (en) | 2011-01-01 |
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