TWI468543B - Substrate transfer and processing system and substrate transfer and processing methods - Google Patents
Substrate transfer and processing system and substrate transfer and processing methods Download PDFInfo
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- TWI468543B TWI468543B TW102131316A TW102131316A TWI468543B TW I468543 B TWI468543 B TW I468543B TW 102131316 A TW102131316 A TW 102131316A TW 102131316 A TW102131316 A TW 102131316A TW I468543 B TWI468543 B TW I468543B
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Description
一種基板轉移暨處理系統以及基板轉移暨處理方法,尤其是涉及一種可大幅減少藥液供給量、提升薄膜沉積均一性且提升產能的基板轉移暨處理系統以及基板轉移暨處理方法。The invention relates to a substrate transfer and processing system and a substrate transfer and processing method, in particular to a substrate transfer and processing system and a substrate transfer and processing method which can greatly reduce the supply of chemical liquid, improve the uniformity of film deposition and increase the productivity.
現今電子工業迅速發展,許多電子產品都需要應用到物理沉積技術或化學沉積技術。另外全世界面臨石油能源耗竭、成本高昂及環保等問題,造成太陽能與氫能源燃料電池的需求與日遽增,由於太陽能電池製造時,必須在一基材上構成多種沉積層(薄膜),才能有效的發揮其功能,足見沉積製程為電子產業及民生產業一個極為要的關鍵技術。Nowadays, the electronics industry is developing rapidly, and many electronic products need to be applied to physical deposition technology or chemical deposition technology. In addition, the world faces the problems of petroleum energy depletion, high cost and environmental protection, which has led to an increase in the demand for solar and hydrogen energy fuel cells. Since solar cells are manufactured, it is necessary to form a plurality of deposition layers (films) on a substrate. Effectively exerting its functions, it shows that the deposition process is an extremely important key technology for the electronics industry and the civilian production industry.
習知的化學浴沉積(Chemical Bath Deposition,CBD)製程,亦為沉積技術之一,其將表面預作處理的一基材(例如太陽能電池基板)浸入化學藥液中持續一定時間,用以在基材表面沉積形成半導體薄膜。但習知的化學浴沉積設備,將基材完全浸入化學藥液之中,如此將導致基材多個表面形成半導體薄膜。然而,基材只需要在一表面形成半導體薄膜。多基材其餘表面所形成的半導體薄膜浪費製造成本與製程時間。The conventional chemical bath deposition (CBD) process is also one of the deposition techniques, which immerses a substrate (such as a solar cell substrate) which is pretreated on the surface into a chemical liquid for a certain period of time. The surface of the substrate is deposited to form a semiconductor film. However, conventional chemical bath deposition equipment completely immerses the substrate in the chemical liquid, which will result in the formation of a semiconductor film on a plurality of surfaces of the substrate. However, the substrate only needs to form a semiconductor film on one surface. The semiconductor film formed on the remaining surface of the multi-substrate wastes manufacturing costs and process time.
因此,如何創作出一種化學鍍浴沉積設備,以使化學鍍浴沉積設備可在撓性基材的單面進行化學鍍浴沉積,是一重要課題。Therefore, how to create an electroless plating bath deposition apparatus to make electroless plating bath deposition on one side of a flexible substrate is an important issue.
本發明的主要目的在於提供一種基板轉移暨處理系統,其可負荷連續性投片及同時處理多個片基板,如此可以大幅增加產能與製造效率,再者利用藥液蓋與基板密閉蓋合所圍置出具有密封空間之藥液盒,如此只需使用少量藥液,因此可大幅減少藥液使用量,又藥液在藥液盒中時皆恆接觸到基板單一表面。The main object of the present invention is to provide a substrate transfer and processing system capable of load-continuous filming and simultaneous processing of a plurality of substrate substrates, which can greatly increase productivity and manufacturing efficiency, and further utilize a chemical liquid cover and a substrate sealing cover. The liquid medicine box with the sealed space is arranged, so that only a small amount of liquid medicine is needed, so that the amount of the liquid medicine can be greatly reduced, and the liquid medicine is always in contact with the single surface of the substrate in the liquid medicine box.
本發明之另一目的在於提供一種基板轉移暨處理方法,其步驟包含有:由一基板轉移裝置將一基板於一輸送路徑上移動;由至少一設置於輸送路徑上之熱板裝置承載基板;以及驅動一設置於輸送路徑上之藥液裝置至熱板裝置所承載之基板處,藥液裝置與基板之上表面形成一封閉空間,封閉空間提供一藥液與基板之上表面接觸以產生一化學反應;由熱板裝置對基板加熱以使基板與藥液加速進行化學反應;往復傾斜擺動熱板裝置、藥液裝置及基板於一角度範圍內,用以使基板上表面與藥液均勻化學反應。Another object of the present invention is to provide a substrate transfer and processing method, the method comprising: moving a substrate on a transport path by a substrate transfer device; and carrying the substrate by at least one hot plate device disposed on the transport path; And driving a liquid chemical device disposed on the conveying path to the substrate carried by the hot plate device, the liquid chemical device forming a closed space with the upper surface of the substrate, the closed space providing a chemical liquid to contact the upper surface of the substrate to generate a Chemical reaction; the substrate is heated by a hot plate device to accelerate the chemical reaction between the substrate and the chemical solution; the reciprocating obliquely oscillating hot plate device, the liquid chemical device and the substrate are within an angle range for uniformly aligning the upper surface of the substrate with the chemical solution reaction.
因此,本發明可解決上述習用技術之缺失,不僅減少藥液使用量,同時提升膜厚均勻性,還能增加例如太陽能電池等基板之產能及良率。Therefore, the present invention can solve the above-mentioned drawbacks of the conventional technology, and not only reduce the amount of the chemical liquid used, but also increase the uniformity of the film thickness, and can also increase the productivity and yield of the substrate such as a solar cell.
100、100A‧‧‧基板轉移暨處理系統100, 100A‧‧‧Substrate transfer and processing system
10、10A‧‧‧基板轉移裝置10, 10A‧‧‧ substrate transfer device
11、11A‧‧‧入口端11, 11A‧‧‧ entrance end
12、12A‧‧‧出口端12, 12A‧‧‧export end
13、13A‧‧‧第一清洗裝置13, 13A‧‧‧First cleaning device
14、14A‧‧‧第二清洗裝置14, 14A‧‧‧Second cleaning device
15A‧‧‧第一傳送裝置15A‧‧‧First conveyor
16A‧‧‧第二傳送裝置16A‧‧‧Second conveyor
20、20A‧‧‧熱板裝置20, 20A‧‧‧ hot plate device
30、30A‧‧‧藥液裝置30, 30A‧‧‧ liquid medicine device
31‧‧‧蓋體31‧‧‧ Cover
311‧‧‧第一開口311‧‧‧ first opening
312‧‧‧第二開口312‧‧‧ second opening
313‧‧‧第三開口313‧‧‧ third opening
32‧‧‧蓋體固定裝置32‧‧‧cover body fixture
33‧‧‧封閉空間33‧‧‧Enclosed space
40、40A‧‧‧傾斜裝置40, 40A‧‧‧ tilting device
41‧‧‧平台41‧‧‧ platform
42‧‧‧固定轉軸42‧‧‧Fixed shaft
43‧‧‧升降裝置43‧‧‧ lifting device
50‧‧‧基板50‧‧‧Substrate
60‧‧‧藥液60‧‧‧ liquid
70‧‧‧薄膜70‧‧‧ film
L、LA‧‧‧輸送路徑L, LA‧‧‧ transport path
S10~S50‧‧‧步驟S10~S50‧‧‧Steps
θ‧‧‧角度Θ‧‧‧ angle
圖1為本發明之基板轉移暨處理系統之第一實施例示意圖。1 is a schematic view of a first embodiment of a substrate transfer and processing system of the present invention.
圖2為本發明之基板轉移暨處理系統的藥液蓋固定機構示意圖。2 is a schematic view of a liquid chemical cap fixing mechanism of the substrate transfer and processing system of the present invention.
圖3為本發明將熱板裝置傾轉以倒除藥液之示意圖。Figure 3 is a schematic view of the present invention in which the hot plate apparatus is tilted to remove the chemical liquid.
圖4為本發明之基板轉移暨處理系統之第二實施例示意圖。4 is a schematic view showing a second embodiment of the substrate transfer and processing system of the present invention.
圖5為本發明之基板轉移暨基板處理方法之流程示意圖。FIG. 5 is a schematic flow chart of a substrate transfer and substrate processing method according to the present invention.
以下配合圖式及元件符號對本發明之實施方式做更詳細的說明,俾使熟習項技藝者在研讀本說明書後能據以實施。The embodiments of the present invention will be described in more detail below with reference to the drawings and the <RTIgt;
本發明有關一種基板轉移暨處理系統及基板轉移暨處理方法,其可連續性投入多片基板,依序將多片基板轉移分配於多個個熱板裝置上,以對每一片基板進行薄膜沉積處理,再將已處理完成的基板轉移並傳送出去,如此可同時處理多片基板,且由於連續性投片及同時處理多片基板,因此可以大幅增加產能與製造效率。The invention relates to a substrate transfer and processing system and a substrate transfer and processing method, which can continuously input a plurality of substrates, and sequentially transfer a plurality of substrates onto a plurality of hot plate devices to perform film deposition on each substrate. After processing, the processed substrate is transferred and transferred, so that a plurality of substrates can be processed at the same time, and the throughput and manufacturing efficiency can be greatly increased due to continuous filming and simultaneous processing of a plurality of substrates.
請參閱圖1所示本發明之基板轉移暨處理系統之第一實施例示意圖,以及請參閱圖2所示本發明之基板轉移暨處理系統的藥液蓋固定機構示意圖。Please refer to FIG. 1 for a schematic diagram of a first embodiment of a substrate transfer and processing system of the present invention, and a schematic diagram of a liquid chemical cap fixing mechanism of the substrate transfer and processing system of the present invention shown in FIG.
基板轉移暨處理系統100包含一基板轉移裝置10、多個熱板裝置20、一藥液裝置30、一傾斜裝置40。基板轉移暨處理系統100可用以轉移與處理一基板50,基板可為非晶矽基板、單晶矽基板、多晶矽基板、微晶矽基板或砷化鎵基板之至少其中之一。The substrate transfer and processing system 100 includes a substrate transfer device 10, a plurality of hot plate devices 20, a chemical solution device 30, and a tilt device 40. The substrate transfer and processing system 100 can be used to transfer and process a substrate 50, which can be at least one of an amorphous germanium substrate, a single crystal germanium substrate, a polycrystalline germanium substrate, a microcrystalline germanium substrate, or a gallium arsenide substrate.
基板轉移裝置10具有一輸送路徑L,基板轉移裝置10可於輸送路徑L的兩端來回移動,並可取放及轉移基板50,使基板50於輸送路徑L上移動,基板轉移裝置10之形式不限,例如可採用真空吸附式機械手臂。在輸送路徑L之兩端分別對應設置有一入口端11以及一出口端12,入口端11提供未與藥液接觸之基板50進入輸送路徑,出口端12提供完成化學反應之基板50由輸送路 徑輸出。本實施例中,於入口端11設有一第一清洗裝置13,於出口端12設有一第二清洗裝置14,基板50在傳送至入口端11時已經過第一清洗裝置13洗淨及乾燥處理,然後從入口端11取得基板50,然後將基板50轉移至任一個熱板裝置20進行後續的薄膜沉積處理,並再從熱板裝置20取回已沉積有薄膜的基板50,再把已沉積出薄膜的基板50轉移至出口端12,由第二清洗裝置14對由出口端12被送出之基板50進行清洗及乾燥。可依所需決定是否設置第一清洗裝置13及第二清洗裝置14。The substrate transfer device 10 has a transport path L. The substrate transfer device 10 can be moved back and forth at both ends of the transport path L, and the substrate 50 can be picked up and transferred to move the substrate 50 on the transport path L. The form of the substrate transfer device 10 is not For example, a vacuum suction type robot arm can be used. An inlet end 11 and an outlet end 12 are respectively disposed at two ends of the conveying path L. The inlet end 11 provides the substrate 50 not in contact with the chemical liquid into the conveying path, and the outlet end 12 provides the substrate 50 for completing the chemical reaction by the conveying path. Diameter output. In this embodiment, a first cleaning device 13 is disposed at the inlet end 11, and a second cleaning device 14 is disposed at the outlet end 12. The substrate 50 has been washed and dried by the first cleaning device 13 when being transferred to the inlet end 11. Then, the substrate 50 is taken from the inlet end 11, and then the substrate 50 is transferred to any of the hot plate devices 20 for subsequent thin film deposition processing, and the substrate 50 on which the thin film has been deposited is taken back from the hot plate device 20, and then deposited. The substrate 50 from which the film is discharged is transferred to the outlet end 12, and the substrate 50 fed out from the outlet end 12 is cleaned and dried by the second cleaning device 14. Whether or not the first cleaning device 13 and the second cleaning device 14 are provided may be determined as needed.
熱板裝置20設置於輸送路徑L上且固定於傾斜裝置40上。每一個熱板裝置20可承載經基板轉移裝置10轉移過來的基板50,且每一個熱板裝置20可升溫至一預定溫度,由熱板裝置20對基板50加熱以使基板50與藥液60加速進行化學反應。熱板裝置20的範圍面積須大於基板50的範圍面積。如圖1所示,本實施例設有四個熱板裝置20並互呈分離設置,然而要注意的是,上述熱板裝置20的配置數目及配置方式視實際需要而定,在此僅是說明用的實例而已,並非用以限制本發明的範圍。The hot plate device 20 is disposed on the transport path L and is fixed to the tilt device 40. Each of the hot plate devices 20 can carry the substrate 50 transferred by the substrate transfer device 10, and each of the hot plate devices 20 can be heated to a predetermined temperature, and the substrate 50 is heated by the hot plate device 20 to make the substrate 50 and the liquid medicine 60. Accelerate the chemical reaction. The range area of the hot plate device 20 must be larger than the range area of the substrate 50. As shown in FIG. 1 , the present embodiment is provided with four hot plate devices 20 and arranged separately from each other. However, it should be noted that the number of configurations and the arrangement of the hot plate devices 20 are determined according to actual needs, and only The examples used are not intended to limit the scope of the invention.
藥液裝置30設置於輸送路徑L且設置於傾斜裝置40上。藥液裝置30包括一蓋體31、一蓋體固定裝置32、一藥液供給裝置以及一沖洗裝置(圖中未示出)。The chemical solution device 30 is disposed on the transport path L and is disposed on the tilting device 40. The medical solution device 30 includes a cover 31, a cover fixing device 32, a chemical supply device, and a rinsing device (not shown).
由蓋體固定裝置32將蓋體31移送至熱板裝置20所承載之基板50處,蓋體31罩蓋壓合於基板50上,蓋體31與基板50之上表面形共同圍置形成具有一封閉空間33的一結構體。藥液供給裝置用以將藥液60注入封閉空間33內。沖洗裝置可用以沖洗基板50及蓋體31。The cover body 31 is transferred to the substrate 50 carried by the hot plate device 20 by the cover fixing device 32. The cover 31 is pressed against the substrate 50, and the cover 31 and the upper surface of the substrate 50 are formed together to form A structure of a closed space 33. The chemical supply device is used to inject the chemical solution 60 into the enclosed space 33. A rinsing device can be used to rinse the substrate 50 and the lid 31.
本實施例中,於蓋體31具有一第一開口311、一第二開口312以及一第三開口313。第一開口311設置於蓋體31之中心處,以使藥液60注入封閉空間33內,而第二開口312與第三開口313分別設置於蓋體31之相對二側。第一開口311與第二開口312分別作為供藥液60注入於封閉空間33內及提供藥液60排出於封閉空間33外,第三開口313可用以提供沖洗裝置沖洗基板50或蓋體31。In this embodiment, the cover body 31 has a first opening 311, a second opening 312, and a third opening 313. The first opening 311 is disposed at the center of the cover 31 to allow the liquid medicine 60 to be injected into the closed space 33, and the second opening 312 and the third opening 313 are respectively disposed on opposite sides of the cover 31. The first opening 311 and the second opening 312 are respectively injected into the closed space 33 as the liquid medicine 60 and the liquid medicine 60 is discharged outside the closed space 33. The third opening 313 can be used to provide the flushing device to rinse the substrate 50 or the cover 31.
除此之外,亦可於蓋體31僅設置第一開口311,由第一開口311提供藥液60注入封閉空間33內,或提供藥液60排出於封閉空間33之外,或提供沖洗裝置沖洗基板50或蓋體31。或者,亦可僅於蓋體31設置第一開口311及第二開口312,由第一開口311與第二開口312分別作為供藥液60注入於封閉空間33內及供藥液60排出於封閉空間33外,第一開口311與第二開口312之其中一個可供沖洗裝置沖洗基板50或蓋體31。In addition, the first opening 311 may be provided in the cover 31, the liquid medicine 60 is supplied from the first opening 311 into the closed space 33, or the medical liquid 60 is discharged outside the closed space 33, or a flushing device is provided. The substrate 50 or the lid 31 is washed. Alternatively, the first opening 311 and the second opening 312 may be provided only in the lid body 31, and the first opening 311 and the second opening 312 are respectively injected into the closed space 33 as the liquid medicine 60 and the medicine liquid 60 is discharged. Outside the space 33, one of the first opening 311 and the second opening 312 is available for the flushing device to rinse the substrate 50 or the cover 31.
由藥液供給裝置將藥液60經第一開口311注入於蓋體31中,以使基板50之上表面可被藥液60均勻地覆蓋。藥液60與基板50的上表面接觸後在藥液60與基板50的上表面之間產生一化學反應(如化學浴沉積),用以在基板50的上表面形成一薄膜70。當基板50的上表面覆蓋藥液60後,熱板裝置20即可對基板50加熱至一預定溫度以加速基板50與藥液60之間的化學反應。The chemical solution 60 is injected into the lid body 31 through the first opening 311 by the chemical solution supply device so that the upper surface of the substrate 50 can be uniformly covered by the chemical solution 60. After the chemical solution 60 is in contact with the upper surface of the substrate 50, a chemical reaction (such as chemical bath deposition) is generated between the chemical solution 60 and the upper surface of the substrate 50 to form a film 70 on the upper surface of the substrate 50. After the upper surface of the substrate 50 is covered with the chemical liquid 60, the hot plate device 20 can heat the substrate 50 to a predetermined temperature to accelerate the chemical reaction between the substrate 50 and the chemical solution 60.
傾斜裝置40包含一平台41、一固定轉軸42以及一升降裝置43。平台41用以承載熱板裝置20及藥液裝置30。固定轉軸42設置於平台41底部其中一側。升降裝置43設置於平台41底部相對於設有固定轉軸42之一側。升降裝置43以固定轉軸42為支點進 行升降往復運動時,可將熱板裝置20、藥液裝置30及基板50傾斜至一角度,或使熱板裝置20、藥液裝置30及基板50從傾斜狀態回復成水平狀態。升降裝置43可採用氣壓裝置或油壓裝置。The tilting device 40 includes a platform 41, a fixed rotating shaft 42 and a lifting device 43. The platform 41 is used to carry the hot plate device 20 and the liquid chemical device 30. The fixed rotating shaft 42 is disposed on one side of the bottom of the platform 41. The lifting device 43 is disposed at the bottom of the platform 41 with respect to one side on which the fixed rotating shaft 42 is provided. The lifting device 43 is fixed with the fixed rotating shaft 42 as a fulcrum When the reciprocating motion is performed, the hot plate device 20, the chemical solution device 30, and the substrate 50 can be tilted to an angle, or the hot plate device 20, the chemical solution device 30, and the substrate 50 can be returned from the inclined state to the horizontal state. The lifting device 43 can employ a pneumatic device or a hydraulic device.
請參閱圖3所示本發明將熱板裝置傾轉以倒除藥液之示意圖。升降裝置43以固定轉軸42為支點進行升降往復運動時,可將熱板裝置20、藥液裝置30及基板50傾斜至一角度θ時,藥液60即可從第二開口312倒除出去。再由沖洗裝置透過第三開口313沖洗稀釋仍殘留於基板50之上的藥液60,其中,基板50經由沖洗裝置的處理後,蓋體固定裝置32即可將蓋體31由基板50上方移開,以供基板轉移裝置10取走基板50,並將基板50送至出口端12,由出口端12所傳送出去的基板50,可先經由第二清洗裝置14清潔乾燥後,再送往下一製程處理。Please refer to FIG. 3 for a schematic diagram of the invention for tilting the hot plate device to remove the liquid. When the lifting device 43 is moved up and down with the fixed rotating shaft 42 as a fulcrum, the hot plate device 20, the chemical solution device 30, and the substrate 50 can be tilted to an angle θ, and the chemical liquid 60 can be removed from the second opening 312. Then, the rinsing device rinses and dilutes the chemical solution 60 remaining on the substrate 50 through the third opening 313. After the substrate 50 is processed by the rinsing device, the cover fixing device 32 can move the cover 31 from the substrate 50 upward. The substrate transfer device 10 is removed from the substrate 50, and the substrate 50 is sent to the outlet end 12. The substrate 50 conveyed by the outlet end 12 can be cleaned and dried by the second cleaning device 14 before being sent to the lower portion. A process is processed.
請參閱圖4所示本發明之基板轉移暨處理系統之第二實施例示意圖。基板轉移暨處理系統100A可用以轉移與處理多個基板50,其包含多個基板轉移裝置10A、多個熱板裝置20A、多個藥液裝置30A及多個傾斜裝置40A。其使用了四組基板轉移裝置10A,等基板轉移裝置10A以相互並列方式進行設置,每一基板轉移裝置10A具有一輸送路徑LA,每一基板轉移裝置10A可於輸送路徑LA的兩端來回移動,並可取放及轉移一基板50,使基板50於所具有之輸送路徑LA上移動,每一基板轉移裝置10A包括一入口端11A以及一出口端12A,入口端11A提供基板50進入輸送路徑LA。於每一輸送路徑LA上設有至少一熱板裝置20A,用以承載並加熱基板;每一個基板轉移裝置10A對應設置有多個個熱板裝置20A,等熱板裝置20A沿著每一個基板轉移裝置10A的輸送路徑 LA而設置於輸送路徑LA之下方,每一個熱板裝置20A可承載自基板轉移裝置10A轉移過來的基板50。Please refer to FIG. 4 for a schematic diagram of a second embodiment of the substrate transfer and processing system of the present invention. The substrate transfer and processing system 100A can be used to transfer and process a plurality of substrates 50 including a plurality of substrate transfer devices 10A, a plurality of hot plate devices 20A, a plurality of chemical liquid devices 30A, and a plurality of tilt devices 40A. It uses four sets of substrate transfer devices 10A, and the substrate transfer devices 10A are arranged side by side. Each substrate transfer device 10A has a transport path LA, and each substrate transfer device 10A can move back and forth at both ends of the transport path LA. And a substrate 50 can be picked up and transferred to move the substrate 50 on the transport path LA. Each substrate transfer device 10A includes an inlet end 11A and an outlet end 12A. The inlet end 11A provides the substrate 50 into the transport path LA. . At least one hot plate device 20A is disposed on each of the transport paths LA for carrying and heating the substrate; each of the substrate transfer devices 10A is correspondingly provided with a plurality of hot plate devices 20A, and the same hot plate device 20A is disposed along each of the substrates Transfer path of transfer device 10A LA is disposed below the transport path LA, and each of the hot plate devices 20A can carry the substrate 50 transferred from the substrate transfer device 10A.
於每一輸送路徑LA上設有一藥液裝置30A,藥液裝置30A被驅動移動至其所設置之輸送路徑LA上之熱板裝置20A所承載之基板50處,於每一輸送路徑LA上設有一傾斜裝置40A,用以傾斜其所設置之輸送路徑LA上之熱板裝置20A、藥液裝置30A及基板50至一角度。本實施例之熱板裝置20A、藥液裝置30A及傾斜裝置40A對於基板50之作用與圖1~圖3所示熱板裝置20、藥液裝置30及傾斜裝置40對於基板50之作用相同,藥液裝置30A與基板50之上表面可形成一封閉空間以提供注入藥液與基板50之上表面接觸而產生化學反應,並由熱板裝置20A對基板50加熱以使基板50與藥液加速進行化學反應,在此不予贅述。A liquid chemical device 30A is disposed on each of the transport paths LA, and the liquid chemical device 30A is driven to move to the substrate 50 carried by the hot plate device 20A on the transport path LA disposed therein, and is disposed on each transport path LA. There is a tilting device 40A for tilting the hot plate device 20A, the liquid chemical device 30A and the substrate 50 on the transport path LA provided thereto to an angle. The functions of the hot plate device 20A, the chemical solution device 30A, and the tilting device 40A of the present embodiment for the substrate 50 are the same as those of the hot plate device 20, the chemical solution device 30, and the tilting device 40 shown in FIGS. 1 to 3 for the substrate 50, The liquid chemical device 30A and the upper surface of the substrate 50 can form a closed space to provide a chemical reaction between the injected chemical solution and the upper surface of the substrate 50, and the substrate 50 is heated by the hot plate device 20A to accelerate the substrate 50 and the chemical solution. The chemical reaction is carried out and will not be described here.
此外,相鄰之基板轉移裝置10A之入口端之間設有相互連接之一第一傳送裝置15A,使多個入口端形成串聯,以使基板50可從等基板轉移裝置10A之間輸送。相鄰之基板轉移裝置之出口端之間設有相互連接之一第二傳送裝置16A,使多個出口端形成串聯。本實施例中,串聯之多個入口端11A之其中一端設有一第一清洗裝置13A,用以清洗及乾燥未與藥液接觸之基板50後,基板50在被送進與第一清洗裝置13A相鄰之入口端11A。串聯之多個出口端12A之其中一端設有一第二清洗裝置14A,完成化學反應之基板50由出口端14A被送出輸送路徑,可由第二清洗裝置14A對基板50進行清洗及乾燥處理。可依所需決定是否設置第一清洗裝置13A及第二清洗裝置14A。Further, a first transfer device 15A is connected between the inlet ends of the adjacent substrate transfer devices 10A so that the plurality of inlet ends are formed in series so that the substrate 50 can be transported from between the substrate transfer devices 10A. A second transfer device 16A is connected between the outlet ends of the adjacent substrate transfer devices to form a plurality of outlet ends in series. In this embodiment, one end of the plurality of inlet ends 11A connected in series is provided with a first cleaning device 13A for cleaning and drying the substrate 50 not in contact with the chemical liquid, and the substrate 50 is fed into the first cleaning device 13A. Adjacent inlet end 11A. One end of the plurality of outlet ends 12A connected in series is provided with a second cleaning device 14A, and the substrate 50 for performing the chemical reaction is sent out from the delivery path by the outlet end 14A, and the substrate 50 can be cleaned and dried by the second cleaning device 14A. Whether or not the first cleaning device 13A and the second cleaning device 14A are provided may be determined as needed.
參閱圖5,本發明之基板轉移暨處理方法之流程示意圖,並請 配合圖1至圖3所示:步驟S10:由基板轉移裝置10將基板50於輸送路徑L上移動Referring to FIG. 5, a schematic diagram of the process of the substrate transfer and processing method of the present invention, and 1 to 3: Step S10: moving the substrate 50 over the transport path L by the substrate transfer device 10.
步驟S20:由設置於輸送路徑上之熱板裝置承載基板;較佳地,基板50在轉移於熱板裝置20之前已經過第一清洗裝置13的洗淨及乾燥的處理。Step S20: The substrate is carried by the hot plate device disposed on the transport path; preferably, the substrate 50 has been subjected to the washing and drying process of the first cleaning device 13 before being transferred to the hot plate device 20.
步驟S30:驅動設置於輸送路徑L上之藥液裝置30至熱板裝置20所承載之基板50處,藥液裝置30與基板30之上表面形成一封閉空間33,封閉空間33可提供藥液60與基板50之上表面接觸以產生一化學反應,用以在基板50的上表面形成一薄膜70。Step S30: driving the liquid chemical device 30 disposed on the transport path L to the substrate 50 carried by the hot plate device 20, the liquid chemical device 30 and the upper surface of the substrate 30 form a closed space 33, and the closed space 33 can provide the liquid medicine 60 is in contact with the upper surface of the substrate 50 to generate a chemical reaction for forming a film 70 on the upper surface of the substrate 50.
步驟S40:由熱板裝置20對基板50加熱以使基板50與藥液60加速進行化學反應。由熱板裝置20加熱至一預定溫度,以加速基板50與藥液60之間的化學反應。Step S40: The substrate 50 is heated by the hot plate device 20 to accelerate the chemical reaction between the substrate 50 and the chemical solution 60. The hot plate device 20 is heated to a predetermined temperature to accelerate the chemical reaction between the substrate 50 and the chemical solution 60.
步驟S50:往復傾斜40擺動熱板裝置20、藥液裝置30及基板50於一角度範圍內,用以使基板50上表面與藥液60均勻化學反應。薄膜70形成後,由往復傾斜40傾斜熱板裝置20以使藥液60的自第二開口312流出,如圖3所示。接著將熱板裝置2回復成水平狀態,使蓋體31離開基板50之上方,即可將位於熱板裝置20上的基板50轉移出去。Step S50: The reciprocating tilt 40 swing hot plate device 20, the liquid chemical device 30 and the substrate 50 are within an angle range for uniformly chemically reacting the upper surface of the substrate 50 with the chemical solution 60. After the film 70 is formed, the hot plate device 20 is tilted by the reciprocating tilt 40 to cause the liquid medicine 60 to flow out from the second opening 312, as shown in FIG. Then, the hot plate device 2 is returned to the horizontal state, and the lid body 31 is separated from above the substrate 50, so that the substrate 50 on the hot plate device 20 can be transferred out.
綜上所述,透過本發明之基板轉移暨處理系統,可連續性投入多片基板,如果利用多個基板轉移裝置,可維持更長期間的連續性投片效果,如此可縮短前後基板投片的間隔時間。In summary, the substrate transfer and processing system of the present invention can continuously input a plurality of substrates, and if a plurality of substrate transfer devices are used, a continuous filming effect can be maintained for a longer period of time, thereby shortening the front and rear substrate projections. Interval.
並且基板轉移裝置可將多個基板分別轉移至不同的熱板裝置上進行薄膜沉積處理,如此可同時對等基板進行薄膜沉積處理,基板轉移裝置再將已沉積有薄膜的基板轉移給輸出端,由此可 知,本發明提供一種連續不間斷之基板轉移及處理基板系統及方法,且還可調配閒置的熱板裝置進行實驗、保養或機台改造等用途使用,不僅提升機台利用率,更可具體提升產能及生產良率。And the substrate transfer device can transfer the plurality of substrates to different hot plate devices for thin film deposition processing, so that the opposite substrate can be simultaneously deposited, and the substrate transfer device transfers the substrate on which the thin film has been deposited to the output end. From this It is known that the present invention provides a continuous uninterrupted substrate transfer and processing substrate system and method, and can also be equipped with an idle hot plate device for use in experiments, maintenance or machine table modification, etc., not only to improve the utilization rate of the machine, but also to be specific Increase production capacity and production yield.
以上所述者僅為用以解釋本發明之較佳實施例,並非企圖據以對本發明做任何形式上之限制,是以,凡有在相同之發明精神下所作有關本發明之任何修飾或變更,皆仍應包括在本發明意圖保護之範疇。The above is only a preferred embodiment for explaining the present invention, and is not intended to limit the present invention in any way, and any modifications or alterations to the present invention made in the spirit of the same invention. All should still be included in the scope of the intention of the present invention.
100‧‧‧基板轉移暨處理系統100‧‧‧Substrate Transfer and Processing System
10‧‧‧基板轉移裝置10‧‧‧Substrate transfer device
11‧‧‧入口端11‧‧‧ entrance end
12‧‧‧出口端12‧‧‧export end
13‧‧‧第一清洗裝置13‧‧‧First cleaning device
14‧‧‧第二清洗裝置14‧‧‧Second cleaning device
20‧‧‧熱板裝置20‧‧‧ hot plate installation
30‧‧‧藥液裝置30‧‧‧Drug device
31‧‧‧蓋體31‧‧‧ Cover
32‧‧‧蓋體固定裝置32‧‧‧cover body fixture
50‧‧‧基板50‧‧‧Substrate
L‧‧‧輸送路徑L‧‧‧Transportation path
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| TWI557841B (en) * | 2016-02-01 | 2016-11-11 | 亞智科技股份有限公司 | Transfer-treatment apparatus and transfer-treatment method |
| US11881361B2 (en) * | 2017-07-14 | 2024-01-23 | Commonwealth Scientific And Industrial Research Organisation | Photovoltaic apparatus and method |
| TWI682529B (en) * | 2018-06-28 | 2020-01-11 | 李崇維 | Micro-element transfer equipment and its transfer and bonding method |
| JP7253955B2 (en) * | 2019-03-28 | 2023-04-07 | 東京エレクトロン株式会社 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD |
| CN115404467B (en) * | 2022-09-02 | 2024-01-09 | 江苏芯梦半导体设备有限公司 | Full-automatic chemical plating system and chemical plating method |
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