TWI468398B - Cyanuric acid derivatives and resist underlayer composition including the cyanuric acid derivatives and method of forming patterns using the resist underlayer composition - Google Patents

Description

Cyanuric acid derivative, photoresist bottom layer composition comprising the same, and method for forming pattern using the photoresist underlayer composition Field of invention

The present invention discloses a cyanuric acid derivative, a photoresist underlayer composition comprising the cyanuric acid derivative, and a method of forming a pattern using the photoresist underlayer composition.

Background of the invention

Industrial fields including microelectronic circuit fabrication and fabrication of microscope structures (e.g., micromachines, magnetoresistive handpieces, etc.) require wafers that include many circuits having reduced size patterns. Effective lithography techniques are necessary to reduce the size of the structure. In view of the fact that a pattern can be imaged directly on a predetermined substrate and a mask typically used for this imaging effect can be provided, lithography etching has an effect when assembling a microscope structure.

A typical lithography method includes the following procedure. A radiation-sensitive photoresist is first exposed in a patterning manner to form a patterned photoresist layer. Next, the exposed photoresist layer is developed using a developing solution. Then, etching the substance present in the opening of the patterned photoresist layer to transfer a pattern Go to the material. After the transfer is completed, the rest of the photoresist layer is removed. However, in some lithographic etching imaging methods, the conventional photoresist does not provide sufficient resistance to subsequent etching steps, so a predetermined pattern is not effectively transferred to the back side of the layer.

Therefore, for example, when a thin photoresist layer is required, the underlayer (ie, the photoresist underlayer) is used as an intermediate layer between the photoresist layer and the material layer, and if the layer is to be etched, the material is thick, if necessary, a large The etch depth, and/or if an etchant for the predetermined underlying material is desired, the intermediate layer can be transferred from the patterned photoresist to be patterned.

The photoresist underlayer has high etch selectivity and sufficient resistance to a variety of etching methods and minimizes reflectivity between the photoresist layer and a material layer. In general, the photoresist underlayer composition plays an important role in determining the exposure characteristics of a photoresist layer, such as resolution, lithographic etch rate, and residue of a photoresist layer. In particular, these exposure characteristics are very important when using ultra-violet radiation (EUV) lasers for ultra-pico-etching.

Summary of invention

An embodiment provides a cyanuric acid derivative for use in a photoresist underlayer.

Another embodiment provides a photoresist underlayer composition comprising the cyanuric acid derivative.

Yet another embodiment provides a method of using the photoresist underlayer composition to form a pattern.

According to an embodiment, a cyanuric acid derivative represented by the following Chemical Formula 1 is provided.

In Chemical Formula 1, R ¹ to R ^{3 are} each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C6. To a C30 aryl group, a substituted or unsubstituted C3 or C30 cycloalkenyl group, a substituted or unsubstituted C7 to C20 aralkyl group, a substituted or unsubstituted C1 to C20 heteroalkyl group, a substituted or Unsubstituted C2 to C30 heterocycloalkyl, substituted or unsubstituted C2 to C30 heteroaryl, substituted or unsubstituted C2 to C30 alkenyl, substituted or unsubstituted C2 to C30 alkyne a substituted or unsubstituted C1 to C20 aldehyde group, a substituted or unsubstituted amine group, a halogen, a halogen-containing group, or a combination thereof, and each of L ¹ to L ^{6 is} independently a single bond, a substituted or unsubstituted C1 to C30 alkylene group, a substituted or unsubstituted C3 to C30 cycloalkylene group, a substituted or unsubstituted C6 to C30 extended aryl group, a substituted or Unsubstituted C3 to C30 cycloalkenylene, substituted or unsubstituted C7 to C20 arylalkylene group, Substituted or unsubstituted C1 to C20 heteroalkyl, substituted or unsubstituted C2 to C30 heterocycloalkyl, substituted or unsubstituted C2 to C30 heteroaryl, substituted or unsubstituted Substituted C2 to C30 alkenyl, monosubstituted or unsubstituted C2 to C30 alkynyl, or combinations thereof.

In Chemical Formula 1, at least one of R ¹ to R ³ may be a heterocycloalkyl group including at least one of nitrogen (N), sulfur (S), oxygen (O), and phosphorus (P) or Heteroaryl.

In Chemical Formula 1, at least one of R ¹ to R ³ may be selected from the following chemical formula a, chemical formula b, or a combination thereof.

In the chemical formula a or formula b, R ⁴ to R ^{12 are} each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted a substituted C6 to C30 aryl group, a substituted or unsubstituted C3 or C30 cycloalkenyl group, a substituted or unsubstituted C7 to C20 aralkyl group, a substituted or unsubstituted C1 to C20 heteroalkyl group, a substituted or unsubstituted C2 to C30 heterocycloalkyl group, a substituted or unsubstituted C2 to C30 heteroaryl group, a substituted or unsubstituted C2 to C30 alkenyl group, a substituted or unsubstituted C2 To a C30 alkynyl group, a substituted or unsubstituted C1 to C20 aldehyde group, a substituted or unsubstituted amine group, a halogen, a halogen-containing group, or a combination thereof, and * represents a chemical formula The point of the sulfur (S) chain of 1 is.

The cyanuric acid derivative can be represented by at least one of the following Chemical Formula 1a and the following Chemical Formula 1b.

According to another embodiment, a photoresist sub-layer composition comprising the cyanuric acid derivative, a photosensitive polymer, and a solvent is provided.

The content of the cyanuric acid derivative and the photosensitive polymer may be from about 0.1 to 5 parts by weight and from about 0.1 to 30, based on 100 parts by weight of the solvent. Parts by weight.

According to another embodiment, a method of forming a pattern is provided, comprising: providing a material layer on a substrate, applying the photoresist underlayer composition on the material layer, and thermally treating the photoresist underlayer composition to obtain a a photoresist layer, a photoresist layer is formed on the photoresist underlayer, and the photoresist layer is exposed and developed, and the photoresist is selectively removed by using the photoresist pattern and exposing a portion of the material layer The bottom layer and etches the exposed portion of the material layer.

The photoresist underlayer can be formed by spin coating.

According to this embodiment of the invention, film density, solvent elution, and exposure characteristics can be improved.

Detailed description of the preferred embodiment

Representative embodiments of the invention are detailed below. However, these examples are merely representative and do not limit the invention. As will be apparent to those skilled in the art, the embodiments may be modified in various different ways without departing from the spirit or scope of the invention.

As used herein, when a definition is not otherwise provided, the term "substituted" means taken through at least one substituent selected from the group consisting of: instead of hydrogen substituted by a compound: a halogen (F, Br, Cl or I), Monohydroxy, monoalkoxy, mononitro, monocyano, monoamine, monoazide, monomethylidene, monodecyl, monodecyl, monocarbonyl, monoamine, monothiol a mono-, monoester, monocarboxy or a salt thereof, a monosulfonate or a salt thereof, a phosphorus or a salt thereof, a C1 to C20 alkyl group, a C2 to C20 alkenyl group, a C2 to C20 alkynyl group, a C6 To C30 aryl, a C7 to C30 aralkyl, a C1 to C4 alkoxy group, a C1 to C20 heteroalkyl group, a C3 to C20 Heteroaryl, a C3 to C30 cycloalkyl, a C3 to C15 cycloalkenyl, a C6 to C15 cycloalkynyl, a C2 to C20 heterocycloalkyl, and combinations thereof.

As used herein, when a definition is not otherwise provided, the term "hetero" is taken to include 1 to 3 heteroatoms selected from N, O, S, and P.

According to one embodiment, the cyanuric acid derivative can be represented by the following Chemical Formula 1.

In Chemical Formula 1, R ¹ to R ^{3 are} each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C6. To a C30 aryl group, a substituted or unsubstituted C3 or C30 cycloalkenyl group, a substituted or unsubstituted C7 to C20 aralkyl group, a substituted or unsubstituted C1 to C20 heteroalkyl group, a substituted or Unsubstituted C2 to C30 heterocycloalkyl, substituted or unsubstituted C2 to C30 heteroaryl, substituted or unsubstituted C2 to C30 alkenyl, substituted or unsubstituted C2 to C30 alkyne A substituted or unsubstituted C1 to C20 aldehyde group, a substituted or unsubstituted amine group, a halogen, a halogen-containing group, or a combination thereof.

At least one of R ¹ may be a heterocycloalkyl or heteroaryl group including at least one of nitrogen (N), sulfur (S), oxygen (O), and phosphorus (P).

For example, at least one of R ¹ to R ³ may be selected from the following chemical formula a, chemical formula b, or a combination thereof.

In the chemical formula a or formula b, R ⁴ to R ^{12 are} each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted a substituted C6 to C30 aryl group, a substituted or unsubstituted C3 or C30 cycloalkenyl group, a substituted or unsubstituted C7 to C20 aralkyl group, a substituted or unsubstituted C1 to C20 heteroalkyl group, a substituted or unsubstituted C2 to C30 heterocycloalkyl group, a substituted or unsubstituted C2 to C30 heteroaryl group, a substituted or unsubstituted C2 to C30 alkenyl group, a substituted or unsubstituted C2 To a C30 alkynyl group, a substituted or unsubstituted C1 to C20 aldehyde group, a substituted or unsubstituted amine group, a halogen, a halogen-containing group, or a combination thereof, and * represents a chemical formula The point of the sulfur (S) chain of 1 is.

By using the method, the cyanuric acid derivative may include the heterocycloalkyl or heteroaryl group containing at least one of nitrogen (N), sulfur (S), oxygen (O), and phosphorus (P). And, therefore, the density of a photoresist underlayer can be increased and the etch rate can be accelerated.

L ¹ to L ⁶ are a linking group, and each is independently a single bond, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, and a substituted Or unsubstituted C6 to C30 extended aryl, substituted or unsubstituted C3 to C30 extended cycloalkenyl, substituted or unsubstituted C7 to C20 arylalkyl, substituted or unsubstituted C1 a C2 to C30 heterocycloalkyl group, a substituted or unsubstituted C2 to C30 heteroaryl group, a substituted or unsubstituted C2 to C30 alkylene group, or a substituted or unsubstituted C2 to C30 heterocycloalkyl group. a C2 to C30 alkynyl group, or a combination thereof, substituted or unsubstituted.

According to another embodiment, the photoresist underlayer composition comprises the cyanuric acid derivative, a photosensitive polymer, and a solvent.

Although the photosensitive polymer may be not particularly limited, it may include any compound capable of initiating a chemical reaction by light, such as a (meth)acryl-based polymer, an ester-based polymer, and a A styrene-based polymer, a novolak-based polymer, a blended polymer thereof, and the like.

The photosensitive polymer may have a weight average molecular weight of from one to 2,000 to 100,000, and preferably from about 4,000 to 15,000. When the photosensitive polymer has a weight average molecular weight within the range, the photosensitive polymerization The substance can be suitably dissolved in the solvent.

According to this embodiment of the invention, the photoresist underlayer composition comprises the cyanuric acid derivative as a component and not as a polymer, and a photosensitive polymer, wherein the cyanuric acid derivative and Photosensitive derivatives are chemically combined. When the cyanuric acid derivative is a monomer, the molecular weight of the cyanuric acid derivative can be easily controlled. Further, when the cyanuric acid derivative as a monomer is crosslinked with the photosensitive polymer, the crosslinking reaction can be carried out substantially uniformly due to its small and uniform size.

The solvent is not limited to a specific solvent, but is limited to have solubility or dispersibility suitable for the cyanuric acid derivative and the photosensitive polymer. For example, the solvent may include at least one selected from the group consisting of propylene glycol, propylene glycol diacetate, methoxypropylene glycol, diethylene glycol, diethylene glycol butyl ether, and tris(ethylene glycol) monomethyl ether. , propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, cyclohexanone, ethyl acetate, γ-butyrolactone, and acetamidine.

The content of the cyanuric acid derivative may be from about 0.1 to 5 parts by weight based on 100 parts by weight of the solvent. Within the above range, the content of the cyanuric acid derivative may be from about 0.25 to 2.5 parts by weight based on 100 parts by weight of the solvent. When the content of the melamine derivative is within the range, the photoresist underlayer composition can be suitably crosslinked with the photosensitive polymer and does not generate unnecessary during the spin coating process. Particles.

The photosensitive polymer may be included in an amount of 0.1 to 30 parts by weight based on 100% by weight of the solvent. Within the above range, the photosensitive polymer may be included in an amount of from about 0.5 to 10 parts by weight based on 100 parts by weight of the solvent. When the content of the photosensitive polymer is within the range, the photoresist underlayer may have A desired thickness.

The photoresist underlayer composition includes the cyanuric acid derivative, thereby increasing the density of the photoresist underlayer and preventing contaminants from flowing into the photoresist underlayer from a substrate or underlayer. In addition, the cyanuric acid derivative can control the polarity of the photoresist underlayer composition, thereby reducing photoresist residue remaining on the photoresist underlayer after exposure and/or development, improving resolution, line width Roughness (LWR), and development residue.

The photoresist underlayer composition may further comprise at least one of the following additives: a surfactant, an acid catalyst, and a crosslinking agent.

The surfactant may include, for example, a monoalkylbenzenesulfonate, a monoalkylpyridine salt, a polyethylene glycol, or a fourth ammonium salt, but is not limited thereto.

The acid catalyst can be a heat activated acid catalyst.

As the acid catalyst, an organic acid such as p-toluenesulfonic acid monohydrate can be used, and a thermal acid generator (TAG) designed for storage can be used. The thermal acid generator is an acid generator capable of generating an acid during heat treatment, such as p-toluenesulfonate, 2,4,4,6-tetrabromocyclohexadienone, benzoin tosylate, 2-nitrobenzyl tosylate, and one alkyl ester of an organic sulfonic acid.

The crosslinking agent may be connected to a repeating unit of a polymer via heating, and may include an amine-based resin such as an etherified amine-based resin; an acetylene urea compound such as a compound represented by the following chemical formula A; a diepoxy compound, for example, a compound represented by the following chemical formula B; a melamine resin such as N-methoxymethyl melamine resin, N-butoxymethyl melamine resin, or a chemical formula C And a representative compound; or a mixture thereof.

The surfactant, the acid catalyst, and the crosslinking agent are each contained in an amount of about 0.001 to 3 parts by weight based on 100 parts by weight of the hard mask composition. Within this content range, the solubility and crosslinkability are ensured without changing the optical properties of the photoresist underlayer.

The photoresist underlayer composition is neither soluble in a solvent and/or developing solution for photoresist, nor is it mixed with a photoresist solution for photoresist, and thus is chemically stable.

Hereinafter, a method of forming a pattern by using the above-described photoresist underlayer composition will be described.

A method of forming a pattern according to an embodiment includes providing a material layer on a substrate, applying a photoresist layer composition comprising the cyanuric acid derivative, a photosensitive polymer, and a solvent to the material layer ,heat Disposing the photoresist underlayer composition to provide a photoresist underlayer, forming a photoresist layer on the photoresist underlayer, exposing and developing the photoresist layer to form a photoresist pattern, by using the photoresist pattern and exposing the photoresist pattern A portion of the material layer selectively removes the photoresist underlayer and etches the exposed portion of the material layer.

The substrate can be, for example, a germanium wafer, a glass substrate, or a polymer substrate.

The material layer is a material to be patterned, such as a metal layer such as an aluminum layer and a copper layer; a semiconductor layer such as a germanium layer; or an insulating layer such as a hafnium oxide layer and a tantalum nitride layer. The layer of material can be formed by a method such as a chemical vapor deposition (CVD) process.

The photoresist underlayer composition can be applied as a solution by spin coating. Herein, the photoresist underlayer composition may be applied to a thickness (for example, about 100 to 10,000 angstroms (Å), but not limited thereto).

Exposure of the photoresist layer can be performed using, for example, ArF, KrF, or EUV. Moreover, after exposure, heat treatment can be carried out at about 90 to 500 °C.

Etching of the exposed portion of the material may be performed by dry etching using an etching etch gas, and the etching gas may be, for example, a mixed gas of CHF ₃ , CF ₄ , Cl ₂ , BCl ₃ , and the like.

The etched material layer may be formed in a plurality of patterns, and the plurality of patterns may be a metal pattern, a semiconductor pattern, an insulating pattern, or the like, such as a plurality of patterns of a semiconductor integrated circuit component.

Hereinafter, this document is explained in more detail with reference to examples. However, they are representative embodiments of the invention and are not limited thereto.

Synthesis of cyanuric acid derivatives Synthesis example 1

3.0 g of tris-(2,3-epoxypropyl)-isopolycyanate (a) was dissolved in 40 g of tetrahydrofuran (THF). Then, 5.0637 g of 2-mercaptobenzothiazole (b) and 0.17 g of benzyltriethylammonium chloride were added to the solution. The mixture was allowed to react at 70 ° C for 24 hours. The formed product was dissolved in dichloromethane and then slowly precipitated in a n-hexane solvent. The precipitate was filtered. The filtered precipitate was dried in a vacuum oven at 50 ° C for about 24 hours to obtain a cyanuric acid derivative represented by the following formula (c).

Synthesis example 2

3.0 g of tris-(2,3-epoxypropyl)-isopolycyanate (a) was dissolved in 40 g of tetrahydrofuran (THF). Then, 4.5475 g of 2-mercaptobenzimidazole (d) and 0.17 g of benzyltriethylammonium chloride were added to the solution. The mixture was allowed to react at 70 ° C for 24 hours. The reaction was dissolved in dichloromethane and then slowly precipitated in hexane solvent. The precipitate was filtered. The filtered precipitate was dried in a vacuum oven at 50 ° C for about 24 hours to obtain a cyanuric acid derivative represented by the following formula (e).

Synthesis of photosensitive polymers Synthesis example 3

40 mmoles of γ-butyrolactone methacrylate (GBLMA), 40 mM hydroxyisopropyl methacrylate, 20 mM 4-hydroxyphenyl methacrylate, and About twice the amount of methyl ethyl ketone as a solvent based on the total weight of the monomers was placed in a flask. Then, 10 mmol of dimethyl-2,2'- oxybis(2-methylpyruvate (V601, Wako Chemicals Inc.) was added as a polymerization initiator at 80 ° C using a syringe. This mixture took about 4 hours and was additionally subjected to polymerization of the mixture, which took 2 hours.

When the polymerization was completed, the obtained polymer was slowly precipitated in a maximum amount of hexane solvent. The precipitate was filtered and dissolved in a suitable amount of a mixed solvent of hexane (n-hexane) / isopropyl alcohol (IPA), and the mixture was stirred. Then, the obtained precipitate was dried in a vacuum oven at 50 ° C for about 24 hours to obtain a photosensitive polymer represented by the following Chemical Formula 2.

The photosensitive polymer had a yield of 75%, a weight average molecular weight (Mw) of 7,903, and a polydispersity (Mw/Mn) of 1.4.

Method for preparing photoresist underlayer composition Example 1

0.5 g of the cyanuric acid derivative according to Synthesis Example 1, 1.5 g of the photosensitive polymer according to Synthesis Example 3, and 0.3 g of an acetylene urea compound having the following chemical formula A as a crosslinking agent (PD1174, TCI Co.) were used. Ltd.), and 0.05 g of an acid catalyst having p-toluenesulfonic acid pyridinium (pPTS) dissolved in 100 g of propylene glycol monomethyl ether acetate (PGMEA) / propylene glycol monomethyl ether (PGME) (7 Within /3 v/v), the solution was filtered to form a photoresist underlayer composition.

Example 2

The phase as in Example 1 was used except that the cyanuric acid derivative according to Example 2 was used instead of the cyanuric acid derivative according to Synthesis Example 1. A photoresist underlayer composition was prepared in the same manner.

Comparative example 1

A photoresist underlayer composition was prepared in the same manner as in Example 1 except that the cyanuric acid derivative according to Synthesis Example 1 was not used.

Formation of photoresist underlayer

The photoresist underlayers having a thickness of about 100 angstroms were formed by spin coating the compositions according to Examples 1 and 2 and Comparative Example 1 on a wafer and thermally treating them on a 205 ° C hot plate for 1 minute.

Evaluation-1: Film Density

The density of the photoresist underlayer formed using the compositions according to Examples 1 and 2 and Comparative Example 1 was measured. The density of the underlayers was measured using an X-ray diffractometer (Model: X'Pert PRO MPD, Panalytical Co. (Netherlands)).

The results are provided in Table 1.

Referring to Table 1, the density of the photoresist underlayer formed by using the compositions according to Examples 1 and 2 was higher than that of the photoresist underlayer formed by using the composition according to Comparative Example 1. Therefore, the structures of the photoresist underlayers formed by using the compositions according to Examples 1 and 2, respectively, are denser than the structures formed by using the composition according to Comparative Example 1, so that the substrate can be effectively blocked. Penetration of dissolved contaminants.

Evaluation-2: Degree of dissolution in solvent and developing solution

The photoresist primer layers formed by using the compositions according to Examples 1 and 2 and Comparative Example 1 were each immersed in a single solvent mainly used for photoresist, such as propylene glycol monomethyl ether (PGME); and propylene glycol monomethyl ether. a mixed solvent of acetate (PGMEA) / cyclohexanone (or Anone) (5 / 5 v / v), and a developing solution mainly for forming a photoresist pattern, for example, including 2.38 wt% of tetramethylammonium hydroxide An aqueous solution of (TMAH).

The degree of dissolution of the photoresist underlayer in the solvent is measured by comparing the thicknesses of the photoresist layers before and after the impregnation step.

The results are provided in Table 2.

Referring to Table 2, the compositions according to Examples 1 and 2 are hardly dissolved in the solvent or developing solution, and the composition according to Comparative Column 1 is dissolved in the solution or developing solution and can be remarkably Lower the thickness of the photoresist underlayer.

Evaluation-3: Exposure characteristics

A photoresist solution was spin-coated on each of the photoresist underlayers formed according to the compositions of Examples 1 and 2 and Comparative Example 1, and then heat-treated at 110 ° C on a hot plate, which took 1 minute to A photoresist layer is formed.

The photoresist layer was exposed using an e-beam burr (acceleration voltage of 100 keV, Elionix Inc.) with a line width of 30 nm and a space width of 30 nm between the lines. Under a light. Then, the photoresist layer was heat-treated at 95 ° C for 60 seconds, developed in an aqueous solution containing 2.38 wt% of tetramethylammonium hydroxide (TMAH), and rinsed with pure water for 15 seconds to form a photoresist. pattern.

The resolution, line width roughness (LWR), and development residue of the photoresist pattern were evaluated.

The line width roughness (LWR) of a pattern of about 30 nm was examined by using a scanning electron microscope (SEM) (S-9260, Hitachi Ltd.) and measured with the length direction of the pattern and a reference of 2 μm. The distance between the ranges. The smaller the line width roughness (LWR), the better.

The development residues were evaluated using a reference value of the dissolution rate (DR) dissolved in an aqueous solution comprising 2.38 wt% tetramethylammonium hydroxide (TMAM) using one of the compositions. The more the dissolution rate, the less the development residue after formation of the pattern. The extent of such development residues was measured by using a scanning electron microscope (SEM). The results were divided into good ○, poor △, and poor ×.

These results are provided in Table 3.

Referring to Table 3, the patterns formed using the compositions according to Examples 1 and 2 had improved LWR, resolution, and development residue as compared with the pattern formed using the composition according to Comparative Example 1.

Therefore, all of the photoresist underlayers formed using the compositions according to Examples 1 and 2 can improve film density, solvent elution, and exposure characteristics.

Although the present invention has been described with reference to the preferred embodiments of the present invention, it is to be understood that the invention is not to be construed as limited. And the same arrangement.

Claims (10)

A cyanuric acid derivative represented by the following Chemical Formula 1: Wherein, in Chemical Formula 1, R ¹ to R ^{3 are} each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted group. a C6 to C30 aryl group, a substituted or unsubstituted C3 or C30 cycloalkenyl group, a substituted or unsubstituted C7 to C20 aralkyl group, a substituted or unsubstituted C1 to C20 heteroalkyl group, once a substituted or unsubstituted C2 to C30 heterocycloalkyl group, a substituted or unsubstituted C2 to C30 heteroaryl group, a substituted or unsubstituted C2 to C30 alkenyl group, a substituted or unsubstituted C2 to a C30 alkynyl group, a substituted or unsubstituted C1 to C20 aldehyde group, a substituted or unsubstituted amine group, a halogen, a halogen-containing group, or a combination thereof, and each of L ¹ to L ⁶ Independently a single bond, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C6 to C30 extended aryl group, once Substituted or unsubstituted C3 to C30 cycloalkenylene, substituted or unsubstituted C7 to C20 arylalkylene Oup), a substituted or unsubstituted C1 to C20 heteroalkyl group, a substituted or unsubstituted C2 to C30 heterocycloalkyl group, a substituted or unsubstituted C2 to C30 heteroaryl group, once Substituted or unsubstituted C2 to C30 alkenyl, substituted or unsubstituted C2 to C30 alkynyl, or combinations thereof. The polycyanate derivative according to claim 1, wherein at least one of R ¹ to R ³ is one of nitrogen (N), sulfur (S), oxygen (O), and phosphorus (P). At least one of a heterocycloalkyl or heteroaryl group. The polycyanate derivative according to claim 2, wherein at least one of R ¹ to R ³ is selected from the following chemical formula a, chemical formula b, or a combination thereof: Wherein, in the chemical formula a or the chemical formula b, R ⁴ to R ^{12 are} each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or Unsubstituted C6 to C30 aryl, substituted or unsubstituted C3 or C30 cycloalkenyl, substituted or unsubstituted C7 to C20 aralkyl, substituted or unsubstituted C1 to C20 heteroalkane a substituted or unsubstituted C2 to C30 heterocycloalkyl group, a substituted or unsubstituted C2 to C30 heteroaryl group, a substituted or unsubstituted C2 to C30 alkenyl group, a substituted or unsubstituted a C2 to C30 alkynyl group, a substituted or unsubstituted C1 to C20 aldehyde group, a substituted or unsubstituted amine group, a halogen, a halogen-containing group, or a combination thereof, and * represents a The point of linkage with the sulfur (S) chain of Chemical Formula 1. The cyanuric acid derivative according to claim 1, wherein the cyanuric acid derivative is represented by at least one of the following Chemical Formula 1a and the following Chemical Formula 1b: A photoresist underlayer composition comprising a cyanuric acid derivative comprising sulfur, a photosensitive polymer, and a solvent; wherein the cyanuric acid derivative is represented by the following Chemical Formula 1: Wherein R ¹ to R ^{3 are} each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C6 to C30 aromatic group; a substituted or unsubstituted C3 or C30 cycloalkenyl group, a substituted or unsubstituted C7 to C20 aralkyl group, a substituted or unsubstituted C1 to C20 heteroalkyl group, a substituted or unsubstituted a C2 to C30 heterocycloalkyl group, a substituted or unsubstituted C2 to C30 heteroaryl group, a substituted or unsubstituted C2 to C30 alkenyl group, a substituted or unsubstituted C2 to C30 alkynyl group, once a substituted or unsubstituted C1 to C20 aldehyde group, a substituted or unsubstituted amine group, a halogen, a halogen-containing group, or a combination thereof, and each of L ¹ to L ^{6 is} independently a single bond. a substituted or unsubstituted C1 to C30 alkylene group, a substituted or unsubstituted C3 to C30 cycloalkylene group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 group To a C30 cycloalkenyl group, a substituted or unsubstituted C7 to C20 arylalkylene group, a substituted or unsubstituted C1 a C2 to C30 heterocycloalkyl group, a substituted or unsubstituted C2 to C30 heteroaryl group, a substituted or unsubstituted C2 to C30 alkylene group, or a substituted or unsubstituted C2 to C30 heterocycloalkyl group. a C2 to C30 alkynyl group, or a combination thereof, substituted or unsubstituted. The photoresist bottom layer composition of claim 5, wherein at least one of R ¹ to R ³ is one of nitrogen (N), sulfur (S), oxygen (O), and phosphorus (P) At least one heterocycloalkyl or heteroaryl. The photoresist bottom layer composition of claim 6, wherein at least one of R ¹ to R ³ is selected from the following chemical formula a, chemical formula b, or a combination thereof: Wherein, in the chemical formula a or the chemical formula b, R ⁴ to R ^{12 are} each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or Unsubstituted C6 to C30 aryl, substituted or unsubstituted C3 or C30 cycloalkenyl, substituted or unsubstituted C7 to C20 aralkyl, substituted or unsubstituted C1 to C20 heteroalkane a substituted or unsubstituted C2 to C30 heterocycloalkyl group, a substituted or unsubstituted C2 to C30 heteroaryl group, a substituted or unsubstituted C2 to C30 alkenyl group, a substituted or unsubstituted a C2 to C30 alkynyl group, a substituted or unsubstituted C1 to C20 aldehyde group, a substituted or unsubstituted amine group, a halogen, a halogen-containing group, or a combination thereof, and * represents a The point of linkage with the sulfur (S) chain of Chemical Formula 1. The photoresist bottom layer composition of claim 5, wherein the content of the cyanuric acid derivative and the photosensitive polymer is from about 0.1 to 5 parts by weight and from about 0.1 to 30, respectively, based on 100 parts by weight of the solvent. Parts by weight. A method for forming a pattern, comprising: providing a material layer on a substrate, applying the photoresist underlayer composition according to any one of claims 5 to 9 to the material layer, and thermally treating the The photoresist underlayer composition is provided to provide a photoresist underlayer, and a photoresist layer is formed on the photoresist underlayer, and the photoresist layer is exposed and developed to form a photoresist pattern, and the photoresist pattern is used and the material is used. One of the layers is partially exposed to selectively remove the photoresist underlayer and etch the exposed portion of the layer of material. The method of claim 9, wherein the photoresist underlayer is via It is formed by a spin coating method.