TWI466333B - A method of manufacturing led - Google Patents

Description

Light-emitting diode manufacturing method

The invention relates to the field of semiconductor illumination, in particular to a method for manufacturing a light-emitting diode.

As an emerging light source, the light-emitting diode is widely used in various current lighting fields due to its high luminous efficiency, small size, light weight, environmental protection, etc., and has a tendency to replace the traditional light source.

The light emitting diode generally includes a substrate, a light emitting chip disposed on the substrate, and a transparent package packaged on the light emitting wafer. The package is used to protect the light emitting wafer and to change the light field distribution of the light emitting wafer. In the conventional method of the LED, the encapsulation system is formed by dispensing on a light-emitting wafer and curing the glue. However, the method for forming such a package is affected by many factors such as the instability of the dispensing amount and the uncontrollable shape of the glue droplet after dispensing, so that the surface of the formed package is an irregular convex structure, thereby The chromaticity diagram (CIE) distribution of the obtained light-emitting diodes is inconsistent, which affects the production yield of the light-emitting diode.

In view of the above, it is necessary to provide a method of manufacturing a light-emitting diode that can improve the production yield of a light-emitting diode.

A method for manufacturing a light emitting diode, comprising the steps of: providing a substrate, forming at least one pair of electrodes on the substrate; Providing at least one illuminating chip on the substrate, wherein the two poles of the at least one illuminating chip are respectively electrically connected to the at least one pair of electrodes; a baffle is provided, and the baffle is provided with at least one groove, and the baffle is placed on the baffle Disposing the at least one illuminating chip in the at least one recess, the baffle surrounding the illuminating wafer; forming a package on the at least one illuminating wafer, the bottom of the package being just received In the at least one recess, a top of the package protrudes from a top surface of the baffle; a plasma generator is provided, and the plasma generator is disposed on a side of the top surface of the baffle, the plasma The generator sprays a plasma solution to the top of the baffle in a direction parallel to the substrate, and the plasma solution dry-etches the top of the package until a top surface of the package forms a planar light-emitting surface. .

In the manufacturing method of the light-emitting diode of the present invention, the bottom of the package body is shaped by the groove of the baffle so as to be the same shape as the groove, and the top of the package body is treated by dry etching of the plasma solution to Forming a flat light-emitting surface, so that the package of the produced light-emitting diodes has a uniform structure, thereby avoiding the inconsistent distribution of the chromaticity diagram of the light-emitting diode due to the irregular structure of the package. Thereby, the production yield of the light-emitting diode is greatly improved.

100‧‧‧Lighting diode

10‧‧‧Substrate

11‧‧‧Electrode

12‧‧‧Lighting chip

13‧‧‧Package

131‧‧‧Glossy surface

14‧‧‧ passage

20‧‧ ‧Baffle

21‧‧‧ Groove

22‧‧‧ top surface

30‧‧‧ Plasma generator

31‧‧‧Electrical slurry solution

1 is a process diagram of a method of fabricating a light emitting diode according to an embodiment of the present invention.

Fig. 2 shows the first step of the method of manufacturing the light-emitting diode of Fig. 1.

FIG. 3 shows the second step of the method of fabricating the LED of FIG. 1.

4 to 5 show the third step of the method of manufacturing the light emitting diode of Fig. 1.

Fig. 6 shows the fourth step of the method of manufacturing the light-emitting diode of Fig. 1.

7 to 8 show the fifth step of the method of manufacturing the light emitting diode of Fig. 1.

Fig. 9 shows the sixth step of the method of manufacturing the light-emitting diode of Fig. 1.

Fig. 10 shows the seventh step of the method of manufacturing the light-emitting diode of Fig. 1.

The invention will be further described in detail below with reference to the accompanying drawings.

Referring to FIG. 1 , various steps of a method for fabricating a light-emitting diode according to an embodiment of the present invention are shown. The method for manufacturing the light-emitting diode mainly includes seven steps S1-S7, as described in detail below.

Step S1 As shown in FIG. 2, a substrate 10 is provided which is made of plastic or other suitable material and has a rectangular structure in the form of a flat plate on which a plurality of pairs of electrodes 11 are disposed.

Step S2 As shown in FIG. 3, a plurality of light-emitting chips 12 are mounted on the substrate 10. The materials of the light-emitting chips 12 can be selected according to actual light-emitting requirements, such as red-emitting GaAsP, yellow-emitting InGaAlP, and blue light. GaN, green light GaP, etc. The illuminating wafers 12 are arranged in an array on the substrate 10, and each of the illuminating wafers 12 corresponds to a pair of electrodes 11. The positive and negative electrodes of each illuminating wafer 12 are electrically connected to a corresponding pair of electrodes 11 respectively. In this embodiment, The light-emitting chip 12 is electrically connected to the corresponding electrode 11 by flip-chip bonding. In the prior art, the manner of eutectic and wire bonding is also suitable for the mounting of the luminescent wafer of the present invention.

Step S3, as shown in FIG. 4 and FIG. 5, provides a baffle 20 made of plastic or other suitable material having a rectangular structure in the form of a flat plate. A plurality of grooves 21 are formed, and the grooves are rectangular and arranged in an array. Each groove 21 is opposite to an illuminating wafer 12 on the substrate 10. The size of the groove 21 is larger than the size of the luminescent wafer 12. . The baffle 20 is mounted on the substrate 10, and each of the illuminating wafers 12 is received in a corresponding recess 21, and the baffle 20 surrounds each of the illuminating wafers 12, so that adjacent illuminating wafers 12 are spaced apart from each other. Come.

Step S4, as shown in FIG. 6, a package body 13 is formed on each of the light-emitting chips 12. The package body 13 is made of epoxy resin or silicone rubber, and the phosphor powder may be simultaneously incorporated into the package body. The height of the body 13 relative to the substrate 10 is greater than the thickness of the baffle 20, and the bottom of the package body 13 is just received in the recess 21 of the baffle 20, and the top portion protrudes from the upper surface of the baffle 20, this embodiment In the example, the package body 13 is formed by dispensing, and the top of the package body 13 is a convex surface.

Step S5, as shown in FIGS. 7 and 8, provides a plasma generator 30 for dry etching the top of the package 13. The working principle of the plasma generator 30 is to use a compressed gas as a working gas, and to melt the top of the package 13 with a high-temperature and high-speed plasma solution as a heat source, while blowing the melted portion with a high-speed air stream, thereby The top of the package 13 forms a smooth light exit surface 131. In this embodiment, the working gas is air. In practical applications, the working gas may be selected from the specific materials of the package 13 as argon, hydrogen, nitrogen, oxygen, a mixed gas thereof, and the like.

The plasma generator 30 is disposed on one side of the top surface 22 of the baffle 20 and on the outer side of one side thereof, and the plasma generator 30 protrudes toward the package 13 in a direction parallel to the substrate 10. The top of the baffle 20 ejects a plasma solution 31 which dry-etches the top of the package 13 until a top surface of the package 13 forms a planar light-emitting surface 131.

Step S6, as shown in FIG. 9, the baffle 20 is removed from the substrate 10, and the baffle 20 is moved. After the separation, adjacent channels 13 form mutually intersecting channels 14.

Step S7 As shown in FIG. 10, the substrate 10 is cut along the channel 14 between the adjacent two packages 13 to be divided into a plurality of independent light-emitting diodes 100.

In the above method for manufacturing the light-emitting diode, the bottom of the package body 13 is shaped by the groove 21 of the baffle 20 so as to be the same shape as the groove 21, and the top of the package body 13 is dry-etched by a plasma solution. The processing is performed to form a flat light-emitting surface 131, so that the package 13 of the obtained light-emitting diode 100 is uniformly structured, and the light-emitting diode caused by the irregular structure of the package 13 is avoided. The chromaticity diagram distribution of 100 is inconsistent, thereby greatly improving the production yield of the light-emitting diode 100.

In addition, those skilled in the art can make other changes in the spirit of the present invention. Of course, such changes in accordance with the spirit of the present invention should be included in the scope of the present invention.

Claims (10)

A method for manufacturing a light emitting diode includes the steps of: providing a substrate, forming at least one pair of electrodes on the substrate; and disposing at least one light emitting chip on the substrate, wherein the two poles of the at least one light emitting chip are respectively associated with the at least one pair Electrically connecting the electrode; providing a baffle; the baffle is provided with at least one groove, the baffle is placed on the substrate, and the at least one illuminating chip is received in the at least one groove, the baffle is surrounded by Forming a package on the at least one illuminating wafer; forming a package on the at least one illuminating chip, the bottom of the package being received in the at least one groove, the top of the package protruding from the top surface of the baffle; a plasma generator, the plasma generator is disposed on a side of a top surface of the baffle, and the plasma generator projects a plasma spray solution on the top of the baffle protruding in a direction parallel to the substrate toward the package The plasma solution dry etches the top of the package until a top surface of the package forms a planar light exit surface. The method of manufacturing a light-emitting diode according to claim 1, wherein the method further comprises the step of removing the baffle from the substrate. The method for manufacturing a light-emitting diode according to claim 1 or 2, wherein the at least one pair of electrodes comprises a plurality of pairs, and the at least one light-emitting chip is arranged in a plurality of arrays, the at least one concave The grooves are arranged in a plurality and arranged in an array, and each groove corresponds to a light-emitting chip. The method for manufacturing a light-emitting diode according to claim 3, wherein the method further comprises the step of cutting the substrate from between adjacent packages to form an independent light-emitting diode. The method for manufacturing a light-emitting diode according to claim 1, wherein the package is improved in the package The body is formed by dispensing, and the bottom of the package has the same shape as the groove. The method for manufacturing a light-emitting diode according to claim 5 is characterized in that the material of the package is a transparent epoxy resin or silicone rubber. The method for producing a light-emitting diode according to claim 1, wherein the package contains phosphor powder. The method for manufacturing a light-emitting diode according to claim 1, wherein the baffle is made of plastic. The method for manufacturing a light-emitting diode according to claim 1, wherein the at least one groove has a size larger than a size of the at least one light-emitting chip. The method for manufacturing a light-emitting diode according to claim 1, wherein the height of the package relative to the substrate is greater than the thickness of the baffle.