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TWI465855B - A method of adjusting an exposure apparatus, an exposure apparatus, and an element manufacturing method - Google Patents

A method of adjusting an exposure apparatus, an exposure apparatus, and an element manufacturing method Download PDF

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Publication number
TWI465855B
TWI465855B TW097128966A TW97128966A TWI465855B TW I465855 B TWI465855 B TW I465855B TW 097128966 A TW097128966 A TW 097128966A TW 97128966 A TW97128966 A TW 97128966A TW I465855 B TWI465855 B TW I465855B
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temperature
liquid
substrate
holding portion
holding
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TW097128966A
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TW200919109A (en
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白田陽介
木田佳己
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尼康股份有限公司
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70341Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/707Chucks, e.g. chucking or un-chucking operations or structural details
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/70733Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • G03F7/7075Handling workpieces outside exposure position, e.g. SMIF box
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858Environment aspects, e.g. pressure of beam-path gas, temperature
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
    • H10P72/0602

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Description

曝光裝置之調整方法、曝光裝置、以及元件製造方法Adjustment method of exposure device, exposure device, and component manufacturing method

本發明係關於一種曝光裝置之調整方法、曝光裝置、以及元件製造方法。The present invention relates to an adjustment method of an exposure apparatus, an exposure apparatus, and a component manufacturing method.

本申請主張2007年7月31日申請之日本特願2007-198675號之優先權,並將其內容援引於此。The priority of Japanese Patent Application No. 2007-198675, filed on Jul. 31, 2007, is hereby incorporated by reference.

於光微影製程所使用之曝光裝置,如下述專利文獻所揭示,已知有一種透過液體使基板曝光之液浸曝光裝置。As an exposure apparatus used in a photolithography process, as disclosed in the following patent documents, there is known a liquid immersion exposure apparatus which exposes a substrate through a liquid.

專利文獻1:日本特開2005-12201號公報Patent Document 1: Japanese Patent Laid-Open Publication No. 2005-12201

曝光裝置具備保持曝光用光照射之基板的保持部。於曝光裝置,保持部之溫度與基板之溫度的關係會成為問題。又,於液浸曝光裝置,基板之溫度與液體之溫度的關係會成為問題。The exposure device includes a holding portion that holds the substrate that is irradiated with the exposure light. In the exposure apparatus, the relationship between the temperature of the holding portion and the temperature of the substrate becomes a problem. Further, in the liquid immersion exposure apparatus, the relationship between the temperature of the substrate and the temperature of the liquid becomes a problem.

本發明之目的在於提供一種用以良好地進行曝光動作之曝光裝置之調整方法。另一目的在於提供一種可良好地進行曝光動作之曝光裝置、以及使用該曝光裝置之元件製造方法。It is an object of the present invention to provide an adjustment method of an exposure apparatus for performing an exposure operation well. Another object of the invention is to provide an exposure apparatus capable of performing an exposure operation satisfactorily and a method of manufacturing an element using the exposure apparatus.

本發明第1形態之調整方法,係使用於液浸曝光裝置,該液浸曝光裝置具有保持基板之第1保持部、及在以第1保持部保持基板前保持基板之第2保持部,透過液體使第1 保持部所保持之基板曝光,其特徵在於,包含:以第1保持部保持溫度檢測器的動作;以第2保持部保持溫度檢測器的動作;以及根據第1保持部所保持之溫度檢測器的檢測結果、及第2保持部所保持之溫度檢測器的檢測結果,調整第1保持部及第2保持部之至少一者之溫度的動作。The method for adjusting the first aspect of the present invention is for use in a liquid immersion exposure apparatus having a first holding portion for holding a substrate and a second holding portion for holding the substrate before holding the substrate by the first holding portion, and transmitting Liquid makes the first Exposure of the substrate held by the holding portion, comprising: an operation of holding the temperature detector by the first holding portion; an operation of holding the temperature detector by the second holding portion; and a temperature detector held by the first holding portion The detection result and the detection result of the temperature detector held by the second holding unit adjust the temperature of at least one of the first holding unit and the second holding unit.

本發明第2形態之調整方法,係使用於液浸曝光裝置,該液浸曝光裝置具有保持基板之保持部,透過液體使保持部所保持之基板曝光,其特徵在於,包含:以保持部所保持之溫度檢測器取得關於保持部之溫度之第1資訊的動作;以溫度檢測器取得關於已供應至溫度檢測器上之液體之溫度之第2資訊的動作;以及根據第1資訊與第2資訊,調整保持部及液體之至少一者之溫度的動作。The method for adjusting the second aspect of the present invention is for use in a liquid immersion exposure apparatus having a holding portion for holding a substrate, and exposing the substrate held by the holding portion through the liquid, and comprising: a holding portion The operation of the temperature detector holding the first information about the temperature of the holding unit, the operation of acquiring the second information about the temperature of the liquid supplied to the temperature detector by the temperature detector, and the first information and the second information Information, the action of adjusting the temperature of at least one of the holding portion and the liquid.

本發明第3形態之元件製造方法,其包含:使用以上述形態之調整方法調整後之液浸曝光裝置使基板曝光的動作;以及使曝光後基板顯影的動作。A method of manufacturing a device according to a third aspect of the present invention includes: an operation of exposing a substrate using a liquid immersion exposure apparatus adjusted by the adjustment method of the above aspect; and an operation of developing the substrate after exposure.

本發明第4形態之曝光裝置,係透過液體以曝光用光使基板曝光,其特徵在於,具備:第1保持部,可在曝光用光照射之位置保持基板;第2保持部,在第1保持部保持基板前保持基板,且調整基板之溫度;搬送裝置,將第2保持部所保持之溫度檢測器從第2保持部搬送至第1保持部;以及調整裝置,根據第1保持部所保持之溫度檢測器的檢測結果、及第2保持部所保持之溫度檢測器的檢測結果,調整第1保持部及第2保持部之至少一者之溫度。An exposure apparatus according to a fourth aspect of the present invention is characterized in that: the first holding portion is provided to hold the substrate at a position where the exposure light is irradiated, and the second holding portion is in the first portion. The holding unit holds the substrate in front of the substrate and adjusts the temperature of the substrate; the transport device transports the temperature detector held by the second holding unit from the second holding unit to the first holding unit; and the adjusting device according to the first holding unit The temperature of at least one of the first holding portion and the second holding portion is adjusted by the detection result of the temperature detector and the detection result of the temperature detector held by the second holding portion.

本發明第5形態之曝光裝置,係透過液體以曝光用光 使基板曝光,其特徵在於,具備:保持部,可在曝光用光照射之位置保持基板;供應口,用以供應液體;以及調整裝置,調整保持部及液體之至少一者之溫度;調整裝置根據保持部及液體之溫度資訊,調整保持部及液體之至少一者之溫度,該溫度資訊,係藉由將液體從供應口供應至保持部所保持之溫度檢測器上,以溫度檢測器獲得。An exposure apparatus according to a fifth aspect of the present invention is characterized in that the liquid is exposed to light for exposure. Exposing a substrate, comprising: a holding portion that holds the substrate at a position where the exposure light is irradiated; a supply port for supplying the liquid; and an adjusting device that adjusts a temperature of at least one of the holding portion and the liquid; and the adjusting device Adjusting the temperature of at least one of the holding portion and the liquid according to the temperature information of the holding portion and the liquid, the temperature information being obtained by the temperature detector by supplying the liquid from the supply port to the temperature detector held by the holding portion .

本發明第6形態之元件製造方法,其包含:使用上述形態之曝光裝置使基板曝光的動作;以及使曝光後基板顯影的動作。A method of manufacturing a device according to a sixth aspect of the present invention includes: an operation of exposing a substrate using the exposure apparatus of the above aspect; and an operation of developing the substrate after exposure.

根據本發明之形態,可進行所欲之曝光動作。又,根據本發明之形態,可製造所欲之元件。According to the aspect of the present invention, the desired exposure operation can be performed. Further, according to the embodiment of the present invention, a desired element can be manufactured.

以下,參照圖式說明本發明之實施形態,本發明並不限於此。又,以下說明中,設定XYZ正交座標系統,一邊參照此XYZ正交座標系統一邊說明各構件的位置關係。又,將水平面內之既定方向設為X軸方向,水平面內與X軸方向正交之方向設為Y軸方向,分別與X軸方向及Y軸方向正交之方向(亦即鉛垂方向)設為Z軸方向。又,將繞X軸、Y軸、及Z軸之旋轉(傾斜)方向分別設為θ x、θ y、及θ z方向。Hereinafter, embodiments of the present invention will be described with reference to the drawings, but the present invention is not limited thereto. In the following description, the XYZ orthogonal coordinate system is set, and the positional relationship of each member will be described with reference to the XYZ orthogonal coordinate system. Further, the predetermined direction in the horizontal plane is the X-axis direction, and the direction orthogonal to the X-axis direction in the horizontal plane is the Y-axis direction, and the direction orthogonal to the X-axis direction and the Y-axis direction (that is, the vertical direction). Set to the Z axis direction. Further, the directions of rotation (inclination) around the X-axis, the Y-axis, and the Z-axis are θ x , θ y , and θ z directions, respectively.

(第1實施形態)(First embodiment)

說明第1實施形態。圖1係顯示第1實施形態之曝光裝置EX的概略構成圖。本實施形態中,以曝光裝置EX為 具備保持基板P之基板載台、及裝載可進行關於曝光之測量之測量器(包含測量構件)之測量載台之曝光裝置之情形為例來進行說明。又,具備基板載台及測量載台之曝光裝置,係揭示於例如美國專利第6,897,963號。The first embodiment will be described. Fig. 1 is a schematic block diagram showing an exposure apparatus EX according to the first embodiment. In this embodiment, the exposure device EX is A case where the substrate stage holding the substrate P and the exposure apparatus for loading the measurement stage of the measuring device (including the measuring member) for measuring the exposure are provided will be described as an example. Further, an exposure apparatus including a substrate stage and a measurement stage is disclosed in, for example, U.S. Patent No. 6,897,963.

圖1中,曝光裝置EX具備可一邊保持光罩M一邊移動的光罩載台1,具有保持基板P之保持具部2H、可一邊以保持具部2H保持基板P一邊移動的基板載台2,裝載關於曝光之測量器、能以不保持基板P之方式與基板載台2獨立移動的測量載台3,能測量各載台1,2,3之位置資訊的干涉儀系統4,以曝光用光EL照明光罩載台1所保持之光罩M的照明系統IL,將曝光用光EL所照明之光罩M之圖案像投影於基板P的投影光學系統PL,將基板P搬送至基板載台2的搬送裝置10,及控制曝光裝置EX整體之動作的控制裝置5。In FIG. 1, the exposure apparatus EX includes a mask stage 1 that can move while holding the mask M, and has a holder stage 2H that holds the substrate P, and a substrate stage 2 that can move while holding the substrate P with the holder portion 2H. , a measuring stage for exposure, a measuring stage 3 capable of independently moving with the substrate stage 2 without holding the substrate P, and an interferometer system 4 capable of measuring position information of each stage 1, 2, 3 for exposure The illumination system IL of the mask M held by the mask stage 1 is illuminated by the light EL, and the pattern image of the mask M illuminated by the exposure light EL is projected onto the projection optical system PL of the substrate P, and the substrate P is transported to the substrate. The transport device 10 of the stage 2 and the control device 5 that controls the overall operation of the exposure device EX.

此外,此處所謂的基板,包含在半導體晶圓等基材上塗布感光材(光阻)者。光罩M包含在基板P上形成投影之元件圖案之標線片。又,本實施形態中,光罩係使用透射型光罩,但亦可使用反射型光罩。Further, the substrate referred to herein includes a photosensitive material (photoresist) coated on a substrate such as a semiconductor wafer. The mask M includes a reticle that forms a projected element pattern on the substrate P. Further, in the present embodiment, the transmissive reticle is used as the reticle, but a reflective reticle may be used.

本實施形態之曝光裝置EX,係透過液體LQ將曝光用光EL照射至基板P,以使基板P曝光的液浸曝光裝置,其具備以液體LQ充滿曝光用光EL之光路空間K的嘴構件6。本實施形態中,液體LQ係使用水(純水)。The exposure apparatus EX of the present embodiment is a liquid immersion exposure apparatus that irradiates the substrate P with the exposure light EL through the liquid LQ to expose the substrate P, and includes a nozzle member that fills the optical path space K of the exposure light EL with the liquid LQ. 6. In the present embodiment, water (pure water) is used as the liquid LQ.

本實施形態之嘴構件6,係配置於投影光學系統PL之複數個光學元件之中、最接近投影光學系統PL之像面的終 端光學元件FL附近。以液體LQ充滿終端光學元件FL之下面(射出面)7、及與該終端光學元件FL之下面7相對向之物體表面之間之曝光用光EL之光路空間K之方式,在嘴構件6與物體之間保持液體LQ,藉此形成液浸空間LS。能與嘴構件6及終端光學元件FL之下面7相對向的物體,包含可移動至來自終端光學元件FL之曝光用光EL照射之位置的物體。本實施形態中,可移動至曝光用光EL照射之位置的物體包含基板P、基板載台2、及測量載台3。使基板P曝光時,在嘴構件6及終端光學元件FL之下面7、與基板P表面之間形成液浸空間LS。當曝光用光EL照射於基板P表面時,液浸空間LS之液體LQ接觸基板P表面。The nozzle member 6 of the present embodiment is disposed in the end of the image plane closest to the projection optical system PL among the plurality of optical elements of the projection optical system PL. Near the end optical element FL. The liquid member L is filled with the light path space K of the exposure light EL between the lower surface (ejection surface) 7 of the terminal optical element FL and the surface of the object opposite to the lower surface 7 of the terminal optical element FL, in the nozzle member 6 and The liquid LQ is held between the objects, thereby forming the liquid immersion space LS. An object that can face the nozzle member 6 and the lower surface 7 of the terminal optical element FL includes an object that can be moved to a position irradiated by the exposure light EL from the terminal optical element FL. In the present embodiment, the object that can be moved to the position where the exposure light EL is irradiated includes the substrate P, the substrate stage 2, and the measurement stage 3. When the substrate P is exposed, a liquid immersion space LS is formed between the lower surface 7 of the nozzle member 6 and the terminal optical element FL and the surface of the substrate P. When the exposure light EL is irradiated onto the surface of the substrate P, the liquid LQ of the liquid immersion space LS contacts the surface of the substrate P.

於本實施形態,使基板P曝光時,以液體LQ覆蓋基板P表面之一部分區域(局部區域)之方式形成液浸空間LS。亦即,本實施形態之曝光裝置EX係採用局部液浸方式,該局部液浸方式,係使基板P曝光時,以液體LQ覆蓋包含投影光學系統PL之投影區域之基板P表面之一部分區域之方式形成液浸空間LS。In the present embodiment, when the substrate P is exposed, the liquid immersion space LS is formed so that the liquid LQ covers a partial region (partial region) of the surface of the substrate P. That is, the exposure apparatus EX of the present embodiment employs a partial liquid immersion method in which a portion of the surface of the substrate P including the projection region of the projection optical system PL is covered with the liquid LQ when the substrate P is exposed. The method forms a liquid immersion space LS.

本實施形態之曝光裝置EX,係掃描型曝光裝置(所謂掃描步進器),該掃描型曝光裝置,係一邊使光罩M與基板P同步移動於既定掃描方向,一邊將光罩M之圖案像投影於基板P。於本實施形態,設基板P之掃描方向(同步移動方向)為Y軸方向、光罩M之掃描方向(同步移動方向)亦為Y軸方向。曝光裝置EX,一邊使基板P相對投影光學系統PL之投影區域移動於Y軸方向,且與該基板P往Y軸方向之 移動同步地使光罩M相對照明系統IL之照明區域移動於Y軸方向,一邊透過投影光學系統PL與液體LQ將曝光用光EL照射於基板P。藉此,將光罩M之圖案像投影於基板P,以曝光用光EL使基板P曝光。The exposure apparatus EX of the present embodiment is a scanning type exposure apparatus (so-called scanning stepper) that moves the mask M while moving the mask M and the substrate P in synchronization with a predetermined scanning direction. The image is projected on the substrate P. In the present embodiment, the scanning direction (synchronous moving direction) of the substrate P is the Y-axis direction, and the scanning direction (synchronous moving direction) of the mask M is also the Y-axis direction. The exposure apparatus EX moves the projection area of the substrate P with respect to the projection optical system PL in the Y-axis direction, and the substrate P is in the Y-axis direction. The movement of the mask M relative to the illumination region of the illumination system IL is synchronously moved in the Y-axis direction, and the exposure light EL is applied to the substrate P through the projection optical system PL and the liquid LQ. Thereby, the pattern image of the mask M is projected onto the substrate P, and the substrate P is exposed by the exposure light EL.

又,本實施形態中,曝光裝置EX具備在以基板載台2保持基板P之前,保持基板P的保持構件8。保持構件8,具有將基板P保持成可拆裝的保持具部8H。保持具部8H,具有能與基板P之背面相對向的保持面。又,曝光裝置EX具備調整保持具部8H所保持之基板P之溫度的基板溫度調整裝置9。基板溫度調整裝置9之至少一部分,係配置於保持構件8。基板溫度調整裝置9,係藉由控制裝置5來控制。Further, in the present embodiment, the exposure apparatus EX includes the holding member 8 that holds the substrate P before the substrate P is held by the substrate stage 2. The holding member 8 has a holder portion 8H that holds the substrate P in a detachable manner. The holder portion 8H has a holding surface that can face the back surface of the substrate P. Further, the exposure apparatus EX includes a substrate temperature adjusting device 9 that adjusts the temperature of the substrate P held by the holder portion 8H. At least a part of the substrate temperature adjusting device 9 is disposed on the holding member 8. The substrate temperature adjusting device 9 is controlled by the control device 5.

本實施形態中,保持構件8係配置於搬送裝置10的搬送路徑。搬送裝置10,在將基板P搬送至基板載台2之前,將該基板P搬送至保持構件8。又,搬送裝置10,將保持構件8所保持之基板P從保持構件8搬出。搬送裝置10,將從保持構件8之保持具部8H搬出之基板P搬送至基板載台2的保持具部2H。In the present embodiment, the holding member 8 is disposed on the transport path of the transport device 10. The transport device 10 transports the substrate P to the holding member 8 before transporting the substrate P to the substrate stage 2 . Further, the transport device 10 carries out the substrate P held by the holding member 8 from the holding member 8. The conveyance device 10 conveys the substrate P carried out from the holder portion 8H of the holding member 8 to the holder portion 2H of the substrate stage 2 .

照明系統IL以均勻照度分布之曝光用光EL照明光罩M上的既定照明區域。作為從照明系統IL射出之曝光用光EL,例如可使用從水銀燈射出之輝線(g線、h線、i線)及KrF準分子雷射光(波長248nm)等遠紫外光(DUV光)、或ArF準分子雷射光(波長193nm)及F2 雷射光(波長157nm)等真空紫外光(VUV光)等。本實施形態中,作為曝光用光EL,係使用ArF準分子雷射光。The illumination system IL illuminates a predetermined illumination area on the reticle M with exposure light EL distributed over a uniform illumination. As the exposure light EL emitted from the illumination system IL, for example, a far-ultraviolet light (DUV light) such as a glow line (g line, h line, i line) emitted from a mercury lamp, and KrF excimer laser light (wavelength 248 nm), or ArF excimer laser light (wavelength 193 nm) and F 2 laser light (wavelength 157 nm) and other vacuum ultraviolet light (VUV light). In the present embodiment, ArF excimer laser light is used as the exposure light EL.

光罩載台1,係藉由包含線性馬達等致動器之驅動系統1D,可一邊保持光罩M,一邊移動於X軸、Y軸、及θ z方向。光罩載台1(光罩M)之位置資訊,係藉由雷射干涉儀系統4之雷射干涉儀4A測量。雷射干涉儀4A,使用設於光罩載台1之測量鏡1R,測量關於光罩載台1在X軸、Y軸、及θ z方向之位置資訊。控制裝置5,根據雷射干涉儀系統4之測量結果,藉由驅動系統1D來控制光罩載台1所保持之光罩M的位置。The mask stage 1 is moved in the X-axis, the Y-axis, and the θ z direction while holding the mask M while the drive system 1D including an actuator such as a linear motor. The position information of the mask stage 1 (mask M) is measured by the laser interferometer 4A of the laser interferometer system 4. The laser interferometer 4A measures the position information of the mask stage 1 in the X-axis, the Y-axis, and the θ z direction using the measuring mirror 1R provided on the mask stage 1. The control device 5 controls the position of the reticle M held by the reticle stage 1 by the drive system 1D based on the measurement result of the laser interferometer system 4.

投影光學系統PL,以既定投影倍率將光罩M之圖案像投影至基板P。投影光學系統PL具有複數個光學元件,該等光學元件被鏡筒PK所保持。本實施形態之投影光學系統PL,係投影倍率為例如1/4、1/5、或1/8等的縮小系統。此外,投影光學系統PL亦可為等倍系統、及放大系統之任一者。本實施形態中,投影光學系統PL之光軸AX與Z軸方向平行。又,投影光學系統PL,亦可為不含反射光學元件的折射系統、不含折射光學元件的反射系統、包含反射光學元件與折射光學元件的反射折射系統之任一者。又,投影光學系統PL,亦可形成倒立像及正立像之任一者。The projection optical system PL projects the pattern image of the mask M onto the substrate P at a predetermined projection magnification. The projection optical system PL has a plurality of optical elements that are held by the lens barrel PK. The projection optical system PL of the present embodiment is a reduction system in which the projection magnification is, for example, 1/4, 1/5, or 1/8. Further, the projection optical system PL may be any of an equal magnification system and an amplification system. In the present embodiment, the optical axis AX of the projection optical system PL is parallel to the Z-axis direction. Further, the projection optical system PL may be any one of a refractive system that does not include a reflective optical element, a reflective system that does not include a refractive optical element, and a catadioptric system that includes a reflective optical element and a refractive optical element. Further, the projection optical system PL may form either an inverted image or an erect image.

又,曝光裝置EX具備可進行投影光學系統PL之光學調整的光學調整裝置。本實施形態中,曝光裝置EX具備可調整投影光學系統PL之成像特性的成像特性調整裝置11作為光學調整裝置。成像特性調整裝置11之例,係揭示於美國專利第4,666,273號公報、美國專利第6,235,438號公報、美國專利公開第2005/0206850號公報等。本實施形態 之成像特性調整裝置11,包含可移動投影光學系統PL之複數個光學元件之一部分的驅動裝置。驅動裝置,能使投影光學系統PL之複數個光學元件之中特定的光學元件移動於光軸AX方向(Z軸方向)。又,驅動裝置,能使特定的光學元件相對光軸AX傾斜。成像特性調整裝置11,係藉由移動投影光學系統PL之特定的光學元件,調整包含投影光學系統PL之各種相差(投影倍率、畸變、球面相差等)及像面位置(焦點位置)等的成像特性。此外,成像特性調整裝置11,包含調整鏡筒PK內部所保持之一部分光學元件彼此間之空間之氣體壓力的壓力調整裝置亦可。成像特性調整裝置11,係藉由控制裝置5來控制。Further, the exposure device EX includes an optical adjustment device that can perform optical adjustment of the projection optical system PL. In the present embodiment, the exposure apparatus EX includes an imaging characteristic adjustment device 11 that can adjust the imaging characteristics of the projection optical system PL as an optical adjustment device. Examples of the imaging characteristic adjusting device 11 are disclosed in U.S. Patent No. 4,666,273, U.S. Patent No. 6,235,438, U.S. Patent Publication No. 2005/0206850, and the like. This embodiment The imaging characteristic adjusting device 11 includes a driving device that is part of a plurality of optical elements of the movable projection optical system PL. The driving device can move a specific optical element among a plurality of optical elements of the projection optical system PL in the optical axis AX direction (Z-axis direction). Further, the driving device can tilt a specific optical element with respect to the optical axis AX. The imaging characteristic adjustment device 11 adjusts imaging of various phase differences (projection magnification, distortion, spherical phase difference, etc.) and image plane position (focus position) including the projection optical system PL by moving a specific optical element of the projection optical system PL. characteristic. Further, the imaging characteristic adjusting device 11 may include a pressure adjusting device that adjusts the gas pressure of a space between a part of the optical elements held inside the lens barrel PK. The imaging characteristic adjusting device 11 is controlled by the control device 5.

基板載台2,可在曝光用光EL照射之位置保持基板P。基板載台2,具有將基板P保持成可拆裝的保持具部2H。保持具部2H,具有能與基板P之背面相對向的保持面。基板載台2,能一邊以保持具部2H保持基板P,一邊在包含與嘴構件6及終端光學元件FL之下面7相對向之位置(曝光用光EL照射之位置)之既定區域內移動於XY方向。The substrate stage 2 can hold the substrate P at a position where the exposure light EL is irradiated. The substrate stage 2 has a holder portion 2H that holds the substrate P in a detachable manner. The holder portion 2H has a holding surface that can face the back surface of the substrate P. The substrate stage 2 is movable in a predetermined region including a position facing the lower surface 7 of the nozzle member 6 and the terminal optical element FL (a position where the exposure light EL is irradiated) while holding the substrate P with the holder portion 2H. XY direction.

基板載台2,係藉由包含線性馬達等致動器之驅動系統2D,能一邊以保持具部2H保持基板P,一邊在基座構件13上,移動於X軸、Y軸、Z軸、θ X、θ Y、及θ Z方向之6自由度的方向。保持具部2H,係配置於基板載台2的凹部2R。保持具部2H,能以基板P表面與XY平面大致平行之方式,保持基板P。本實施形態中,基板載台2之凹部2R之周圍的上面2F與保持具部2H所保持之基板P的表面, 係配置於大致平一平面內(面高相同)。The substrate stage 2 is a drive system 2D including an actuator such as a linear motor, and is movable on the base member 13 on the X-axis, the Y-axis, and the Z-axis while holding the substrate P in the holder portion 2H. The direction of 6 degrees of freedom in the θ X, θ Y, and θ Z directions. The holder portion 2H is disposed in the recess 2R of the substrate stage 2 . The holder portion 2H can hold the substrate P such that the surface of the substrate P is substantially parallel to the XY plane. In the present embodiment, the upper surface 2F around the concave portion 2R of the substrate stage 2 and the surface of the substrate P held by the holder portion 2H are They are arranged in a substantially flat plane (the same height).

基板載台2(基板P)在X軸、Y軸、及θ Z方向的位置資訊,係藉由干涉儀系統4之雷射干涉儀4B測量。雷射干涉儀4B,使用基板載台2的測量鏡42R,測量關於基板載台2在X軸、Y軸、及θ Z方向的位置資訊。又,基板載台2之保持具部2H所保持之基板P之表面的面位置資訊(關於Z軸、θ X、及θ Y方向的位置資訊),係藉由未圖示之聚焦調平檢測系統來檢測。控制裝置5,根據雷射干涉儀4B的測量結果及聚焦調平檢測系統的檢測結果,藉由驅動系統2D,控制基板載台2所保持之基板P的位置。The positional information of the substrate stage 2 (substrate P) in the X-axis, the Y-axis, and the θ Z direction is measured by the laser interferometer 4B of the interferometer system 4. The laser interferometer 4B measures the position information of the substrate stage 2 in the X-axis, the Y-axis, and the θ Z direction using the measuring mirror 42R of the substrate stage 2. Moreover, the surface position information (position information on the Z axis, θ X , and θ Y directions) of the surface of the substrate P held by the holder portion 2H of the substrate stage 2 is detected by a focus leveling (not shown). System to detect. The control device 5 controls the position of the substrate P held by the substrate stage 2 by the drive system 2D based on the measurement results of the laser interferometer 4B and the detection result of the focus leveling detection system.

測量載台3,裝載形成有基準標記之基準構件(測量構件),及各種光電感測器等、進行關於曝光處理之測量的測量器,藉由包含線性馬達等致動器之驅動系統3D,能在基座構件13上,移動於X軸、Y軸、Z軸、θ X、θ Y、及θ Z方向之6自由度的方向。測量載台3的位置資訊,係藉由干涉儀系統4之雷射干涉儀4C測量。雷射干涉儀4C,使用測量載台3的測量鏡43R,測量關於測量載台3在X軸、Y軸、及θ Z方向的位置資訊。控制裝置5,根據雷射干涉儀4C的測量結果,藉由驅動系統3D,控制測量載台3的位置。The measuring stage 3, the reference member (measuring member) on which the reference mark is formed, and various photodetectors and the like, and a measuring device for measuring the exposure processing, by a driving system 3D including an actuator such as a linear motor, The base member 13 can be moved in the directions of 6 degrees of freedom in the X-axis, Y-axis, Z-axis, θ X, θ Y, and θ Z directions. The position information of the measuring stage 3 is measured by the laser interferometer 4C of the interferometer system 4. The laser interferometer 4C measures the position information of the measurement stage 3 in the X-axis, the Y-axis, and the θ Z direction using the measuring mirror 43R of the measuring stage 3. The control device 5 controls the position of the measurement stage 3 by the drive system 3D based on the measurement result of the laser interferometer 4C.

基板載台2與測量載台3,可在包含與嘴構件6及終端光學元件FL之下面7相對向之位置(曝光用光EL照射之位置)之基座構件13上的既定區域內,彼此獨立移動。又,本實施形態中,例如歐洲專利申請公開第1,713,113號小冊子 所揭示,液浸空間LS可在基板載台2上與測量載台3上之間移動。亦即,本實施形態中,控制裝置5,在基板載台2與測量載台3接近或接觸之狀態下,使基板載台2與測量載台3同步移動,以在基板載台2及測量載台3之至少一者、與嘴構件6及終端光學元件FL之間持續形成可保持液體LQ的空間。藉此,液浸空間LS在基板載台2上與測量載台3上之間移動。The substrate stage 2 and the measurement stage 3 can be in a predetermined area on the base member 13 including the position facing the lower surface 7 of the nozzle member 6 and the terminal optical element FL (the position where the exposure light EL is irradiated) Move independently. Further, in the present embodiment, for example, the European Patent Application Publication No. 1,713,113 As disclosed, the liquid immersion space LS is movable between the substrate stage 2 and the measurement stage 3. In other words, in the present embodiment, the control unit 5 moves the substrate stage 2 and the measurement stage 3 in synchronization with the substrate stage 2 and the measurement stage 3 in proximity to the substrate stage 2 and the measurement. At least one of the stages 3 and the space between the nozzle member 6 and the terminal optical element FL continue to form a liquid LQ. Thereby, the liquid immersion space LS moves between the substrate stage 2 and the measurement stage 3.

曝光裝置EX,具備對曝光用光EL之光路空間K供應液體LQ的供應口14、及回收液體LQ的回收口15。於本實施形態,供應口14及回收口15係配置於嘴構件6。在供應口14,透過供應管16連接液體供應裝置17。在回收口15,透過回收管18連接液體回收裝置19。於本實施形態,在回收口15配置多孔構件(篩孔)。The exposure apparatus EX includes a supply port 14 for supplying the liquid LQ to the optical path space K of the exposure light EL, and a recovery port 15 for recovering the liquid LQ. In the present embodiment, the supply port 14 and the recovery port 15 are disposed in the nozzle member 6. At the supply port 14, the liquid supply device 17 is connected through the supply pipe 16. At the recovery port 15, the liquid recovery device 19 is connected through a recovery pipe 18. In the present embodiment, a porous member (mesh hole) is disposed in the recovery port 15.

液體供應裝置17包含調整欲供應之液體LQ之溫度的液體溫度調整裝置20。又,液體供應裝置17包含降低液體LQ中之氣體成分的脫氣裝置、及除去液體LQ中之異物的過濾器單元等。液體供應裝置17可供應潔淨且經溫度調整的液體LQ。液體回收裝置19包含真空系統,能回收液體LQ。從液體供應裝置17送出之液體LQ,在流過供應管16、及嘴構件6之供應流路後,藉由供應口14供應至曝光用光EL之光路空間K(基板P上)。又,藉由驅動液體回收裝置19,從回收口15回收之液體LQ,在流過嘴構件6之回收流路後,透過回收管18回收至液體回收裝置19。The liquid supply device 17 includes a liquid temperature adjustment device 20 that adjusts the temperature of the liquid LQ to be supplied. Further, the liquid supply device 17 includes a deaerator that reduces the gas component in the liquid LQ, and a filter unit that removes foreign matter in the liquid LQ. The liquid supply device 17 can supply a clean and temperature-adjusted liquid LQ. The liquid recovery device 19 includes a vacuum system capable of recovering the liquid LQ. The liquid LQ sent from the liquid supply device 17 is supplied to the optical path space K (on the substrate P) of the exposure light EL through the supply port 14 after flowing through the supply flow path of the supply pipe 16 and the nozzle member 6. Further, by driving the liquid recovery device 19, the liquid LQ recovered from the recovery port 15 flows through the recovery flow path of the nozzle member 6, and is recovered into the liquid recovery device 19 through the recovery pipe 18.

控制裝置5同時進行液體供應裝置17之液體供應動作 及液體回收裝置19之液體回收動作,以液體LQ充滿曝光用光EL之光路空間K之方式形成液浸空間LS。在基板P上,以覆蓋投影光學系統PL之投影區域之方式,形成大於投影區域、且小於基板P之液體LQ的液浸區域。The control device 5 simultaneously performs the liquid supply action of the liquid supply device 17 The liquid recovery operation of the liquid recovery device 19 forms the liquid immersion space LS such that the liquid LQ fills the optical path space K of the exposure light EL. On the substrate P, a liquid immersion area larger than the projection area and smaller than the liquid LQ of the substrate P is formed so as to cover the projection area of the projection optical system PL.

曝光裝置EX,至少將光罩M之圖案像投影至基板P時,使用嘴構件6,以液體LQ充滿曝光用光EL之光路空間K之方式形成液浸空間LS。曝光裝置EX,透過投影光學系統PL與液浸空間LS之液體LQ,將通過光罩M之曝光用光EL照射於基板載台2之保持具部2H所保持之基板P。據此,將光罩M之圖案像投影至基板P,使基板P曝光。In the exposure apparatus EX, when at least the pattern image of the mask M is projected onto the substrate P, the liquid immersion space LS is formed so that the liquid LQ fills the optical path space K of the exposure light EL by using the nozzle member 6. The exposure device EX passes through the projection optical system PL and the liquid LQ of the liquid immersion space LS, and irradiates the exposure light EL passing through the mask M to the substrate P held by the holder portion 2H of the substrate stage 2. Thereby, the pattern image of the mask M is projected onto the substrate P, and the substrate P is exposed.

基板溫度調整裝置9可調整保持具部8H所保持之基板P的溫度。基板溫度調整裝置9之至少一部分,係設於保持構件8的內部,控制裝置5使用基板溫度調整裝置9,可調整至少保持具部8H的溫度。基板溫度調整裝置9,藉由調整保持具部8H的溫度,可調整該保持具部8H所保持之基板P的溫度。保持具部8H的溫度,與該保持具部8H所保持之經溫度調整後之基板P的溫度,實質上成為相等。The substrate temperature adjusting device 9 can adjust the temperature of the substrate P held by the holder portion 8H. At least a part of the substrate temperature adjusting device 9 is provided inside the holding member 8, and the control device 5 can adjust the temperature of at least the holder portion 8H using the substrate temperature adjusting device 9. The substrate temperature adjusting device 9 adjusts the temperature of the substrate P held by the holder portion 8H by adjusting the temperature of the holder portion 8H. The temperature of the holder portion 8H is substantially equal to the temperature of the temperature-adjusted substrate P held by the holder portion 8H.

本實施形態中,基板溫度調整裝置9包含形成於保持構件8之內部的流路、及使經溫度調整之流體流過該流路的流體供應機構。保持具部8H(基板P)的溫度,係藉由流過該流路的流體來調整。此外,基板溫度調整裝置9具備用以調整保持具部8H(基板P)之溫度的帕爾帖元件、加熱器等亦可。In the present embodiment, the substrate temperature adjusting device 9 includes a flow path formed inside the holding member 8 and a fluid supply mechanism that causes the temperature-adjusted fluid to flow through the flow path. The temperature of the holder portion 8H (substrate P) is adjusted by the fluid flowing through the flow path. Further, the substrate temperature adjusting device 9 may include a Peltier element, a heater, or the like for adjusting the temperature of the holder portion 8H (substrate P).

圖2係從上方觀察基板載台2及測量載台3的俯視圖。 在測量載台3之上面3F的既定位置設有基準板21作為測量器(測量構件),該基準板21上形成有圖案像與基板P上之照射區域之對準處理所使用的第1、第2基準標記FM1,FM2。2 is a plan view of the substrate stage 2 and the measurement stage 3 as viewed from above. A reference plate 21 is provided as a measuring device (measuring member) at a predetermined position on the upper surface 3F of the measuring stage 3, and the reference plate 21 is formed with the first image used for the alignment process of the image on the substrate P. Second reference marks FM1, FM2.

又,在測量載台3之上面3F的既定位置形成有開口22。此外,在該開口22之下方(-Z方向),例如美國專利公開第2002/041377號公報等所揭示,配置有測量投影光學系統PL之成像特性(光學特性)之空間像測量裝置23之至少一部分。空間像測量裝置23,可檢測透過投影光學系統PL與液體LQ而形成之圖案像的狀態。使用空間像測量裝置23檢測圖案像的狀態時,在光罩載台1配置形成有既定圖案(例如測量用圖案)的光罩M。控制裝置5,使終端光學元件FL之下面7與上面3F的開口22相對向,以液體LQ充滿終端光學元件FL之下面7與包含開口22之上面3F之間之曝光用光EL之光路空間K之方式形成液浸空間LS。控制裝置5,藉由照明系統IL以曝光用光EL照明光罩M。照射至光罩M之曝光用光EL,透射過該光罩M射入投影光學系統PL。射入投影光學系統PL之曝光用光EL,透過該投影光學系統PL及液體LQ,照射至開口22。光罩M之圖案像透過投影光學系統PL及液體LQ而投影於開口22。藉此,配置於開口22之下方的空間像測量裝置23,可檢測透過投影光學系統PL與液體LQ而形成之圖案像的狀態。此外,以空間像測量裝置23檢測像之狀態的圖案,配置於光罩載台1的一部分亦可。Further, an opening 22 is formed at a predetermined position on the upper surface 3F of the measurement stage 3. Further, at least under the opening 22 (in the -Z direction), for example, as disclosed in U.S. Patent Publication No. 2002/041377, the at least one of the aerial image measuring devices 23 for measuring the imaging characteristics (optical characteristics) of the projection optical system PL is disposed. portion. The space image measuring device 23 can detect a state in which a pattern image formed by the projection optical system PL and the liquid LQ is transmitted. When the state of the pattern image is detected by the space image measuring device 23, the mask M on which the predetermined pattern (for example, the pattern for measurement) is formed is disposed on the mask stage 1. The control device 5 causes the lower surface 7 of the terminal optical element FL to face the opening 22 of the upper surface 3F, and fills the optical path space K of the exposure light EL between the lower surface 7 of the terminal optical element FL and the upper surface 3F including the opening 22 with the liquid LQ. The manner of forming the liquid immersion space LS. The control device 5 illuminates the mask M with the exposure light EL by the illumination system IL. The exposure light EL that has been irradiated onto the mask M is transmitted through the mask M into the projection optical system PL. The exposure light EL incident on the projection optical system PL is transmitted through the projection optical system PL and the liquid LQ to the opening 22. The pattern image of the mask M is projected onto the opening 22 through the projection optical system PL and the liquid LQ. Thereby, the space image measuring device 23 disposed below the opening 22 can detect a state in which the pattern image formed by the projection optical system PL and the liquid LQ is transmitted. Further, the pattern in which the image is detected by the space image measuring device 23 may be disposed on a part of the mask stage 1.

接著,參照圖3、圖4、及圖5的流程圖說明具有上述構成之曝光裝置EX之調整方法的一例。以下說明中,將基板載台2之保持具部2H適當稱為第1保持具部2H,將保持構件8之保持具部8H適當稱為第2保持具部8H。Next, an example of an adjustment method of the exposure apparatus EX having the above configuration will be described with reference to the flowcharts of FIGS. 3, 4, and 5. In the following description, the holder portion 2H of the substrate stage 2 is appropriately referred to as a first holder portion 2H, and the holder portion 8H of the holding member 8 is appropriately referred to as a second holder portion 8H.

本實施形態之調整方法,包含使第1保持具部2H之溫度與第2保持具部8H之溫度成為既定關係的第1處理(步驟SA1~SA7)、使第1保持具部2H之溫度與液體LQ之溫度成為既定關係的第2處理(步驟SB1~SB5)、及進行光學調整的第3處理(步驟SC1~SC4)。The adjustment method of the present embodiment includes a first process (steps SA1 to SA7) in which the temperature of the first holder portion 2H and the temperature of the second holder portion 8H are in a predetermined relationship (steps SA1 to SA7), and the temperature of the first holder portion 2H is set to The temperature of the liquid LQ is a second process (steps SB1 to SB5) of a predetermined relationship and a third process (steps SC1 to SC4) for performing optical adjustment.

本實施形態中,進行上述第1處理及第2處理之至少一部分時,使用圖6所示之溫度檢測器30。溫度檢測器30具有基材31、配置於基材31的複數個溫度檢測部32、處理溫度檢測部32之檢測結果的處理部33。處理部33包含儲存溫度檢測部32之檢測結果的記憶元件33M。又,處理部33包含將溫度檢測部32之檢測結果以無線方式送訊至外部之收訊裝置35的送訊裝置34。收訊裝置35係連接於控制裝置5,將溫度檢測部32之檢測結果輸出至控制裝置5。控制裝置5,根據溫度檢測部32之檢測結果,進行既定處理。此外,處理部33亦可不具備送訊裝置34,將溫度檢測器30從曝光裝置EX搬出後,讀取記憶元件33M(記憶裝置)所儲存之資訊亦可。In the present embodiment, when at least a part of the first process and the second process are performed, the temperature detector 30 shown in Fig. 6 is used. The temperature detector 30 includes a substrate 31, a plurality of temperature detecting units 32 disposed on the substrate 31, and a processing unit 33 that processes the detection result of the temperature detecting unit 32. The processing unit 33 includes a memory element 33M that stores the detection result of the temperature detecting unit 32. Further, the processing unit 33 includes a transmitting device 34 that wirelessly transmits the detection result of the temperature detecting unit 32 to the external receiving device 35. The receiving device 35 is connected to the control device 5, and outputs the detection result of the temperature detecting unit 32 to the control device 5. The control device 5 performs predetermined processing based on the detection result of the temperature detecting unit 32. Further, the processing unit 33 may not include the transmitting device 34, and may read the information stored in the memory element 33M (memory device) after the temperature detector 30 is carried out from the exposure device EX.

溫度檢測器30之外形,與基板P之外形大致相同。第1保持具部2H及第2保持具部8H分別將溫度檢測器30保持成可拆裝。溫度檢測器30,當保持於第1保持具部2H時 可取得第1保持具部2H的溫度資訊,當保持於第2保持具部8H時可取得第2保持具部8H的溫度資訊。本實施形態中,由於第2保持具部8H所保持之基板P係調整至與第2保持具部8H大致相同溫度,因此藉由測量第2保持具部8H的溫度,可測量從第2保持具部8H搬出之溫度調整後之基板P的溫度。又,溫度檢測器30可取得供應至溫度檢測器30上之液體LQ的溫度資訊。The temperature detector 30 has an outer shape which is substantially the same as the outer shape of the substrate P. The first holder portion 2H and the second holder portion 8H hold the temperature detector 30 in a detachable manner. The temperature detector 30 is held by the first holder portion 2H The temperature information of the first holder portion 2H can be obtained, and when held in the second holder portion 8H, the temperature information of the second holder portion 8H can be acquired. In the present embodiment, since the substrate P held by the second holder portion 8H is adjusted to have substantially the same temperature as the second holder portion 8H, the second holder can be measured by measuring the temperature of the second holder portion 8H. The temperature of the substrate P after the temperature adjustment of the portion 8H is carried out. Further, the temperature detector 30 can obtain temperature information of the liquid LQ supplied to the temperature detector 30.

又,可搬送基板P之搬送裝置10,可搬送溫度檢測器30。搬送裝置10,可在第1保持具部2H及第2保持具部8H之間搬送溫度檢測器30。Further, the transport device 10 capable of transporting the substrate P can transport the temperature detector 30. The transport device 10 can transport the temperature detector 30 between the first holder portion 2H and the second holder portion 8H.

首先,進行使第1保持具部2H之溫度與第2保持具部8H之溫度成為既定關係的第1處理。當第1處理開始時(步驟SA1),將溫度檢測器30搬入第2保持具部8H(步驟SA2)。本實施形態中,搬送裝置10,將溫度檢測器30搬入第2保持具部8H。First, a first process is performed in which the temperature of the first holder portion 2H and the temperature of the second holder portion 8H are in a predetermined relationship. When the first process is started (step SA1), the temperature detector 30 is carried into the second holder portion 8H (step SA2). In the present embodiment, the transport device 10 carries the temperature detector 30 into the second holder portion 8H.

如圖7A之示意圖所示,第2保持具部8H保持溫度檢測器30。第2保持具部8H所保持之溫度檢測器30,取得該第2保持具部8H的溫度資訊(步驟SA3)。溫度檢測器30所取得之第2保持具部8H的溫度資訊,係透過處理部33之送訊裝置34及收訊裝置35,輸出至控制裝置5。As shown in the schematic view of FIG. 7A, the second holder portion 8H holds the temperature detector 30. The temperature detector 30 held by the second holder portion 8H acquires the temperature information of the second holder portion 8H (step SA3). The temperature information of the second holder portion 8H obtained by the temperature detector 30 is transmitted to the control device 5 through the transmission device 34 and the receiving device 35 of the processing unit 33.

以溫度檢測器30取得第2保持具部8H的溫度資訊後,將溫度檢測器30從第2保持具部8H搬送至第1保持具部2H(步驟SA4)。本實施形態中,藉由將基板P從第2保持具部8H搬送至第1保持具部2H的搬送裝置10,將溫度檢測 器30從第2保持具部8H搬送至第1保持具部2H。After the temperature information of the second holder portion 8H is acquired by the temperature detector 30, the temperature detector 30 is transferred from the second holder portion 8H to the first holder portion 2H (step SA4). In the present embodiment, the temperature is detected by the transfer device 10 that transports the substrate P from the second holder portion 8H to the first holder portion 2H. The device 30 is transported from the second holder portion 8H to the first holder portion 2H.

圖7B之示意圖中,溫度檢測器30係保持於第1保持具部2H。第1保持具部2H所保持之溫度檢測器30,取得第1保持具部2H的溫度資訊(步驟SA5)。溫度檢測器30所取得之第1保持具部2H的溫度資訊,係透過處理部33之送訊裝置34及收訊裝置35,輸出至控制裝置5。In the schematic view of Fig. 7B, the temperature detector 30 is held by the first holder portion 2H. The temperature detector 30 held by the first holder portion 2H acquires temperature information of the first holder portion 2H (step SA5). The temperature information of the first holder portion 2H obtained by the temperature detector 30 is transmitted to the control device 5 through the transmission device 34 and the receiving device 35 of the processing unit 33.

控制裝置5,根據溫度檢測器30所取得之第1保持具部2H的溫度資訊、及溫度檢測器30所取得之第2保持具部8H的溫度資訊,使用基板溫度調整裝置9調整第2保持具部8H的溫度,以使第1保持具部2H的溫度與第2保持具部8H的溫度成為既定關係(步驟SA6)。The control device 5 adjusts the second hold using the substrate temperature adjusting device 9 based on the temperature information of the first holder portion 2H obtained by the temperature detector 30 and the temperature information of the second holder portion 8H obtained by the temperature detector 30. The temperature of the portion 8H is such that the temperature of the first holder portion 2H and the temperature of the second holder portion 8H are in a predetermined relationship (step SA6).

本實施形態中,控制裝置5,使用基板溫度調整裝置9調整第2保持具部8H的溫度,以縮小第1保持具部2H與第2保持具部8H的溫度差。亦即,調整第2保持具部8H的溫度,以縮小從第2保持具部8H搬送至第1保持具部2H之基板P之溫度與第1保持具部2H的溫度差。本實施形態中,控制裝置5,使用基板溫度調整裝置9調整第2保持具部8H的溫度,以使第2保持具部8H的溫度與第1保持具部2H的溫度實質上一致。In the present embodiment, the controller 5 adjusts the temperature of the second holder portion 8H using the substrate temperature adjusting device 9 to reduce the temperature difference between the first holder portion 2H and the second holder portion 8H. In other words, the temperature of the second holder portion 8H is adjusted to reduce the temperature difference between the temperature of the substrate P conveyed from the second holder portion 8H to the first holder portion 2H and the first holder portion 2H. In the present embodiment, the controller 5 adjusts the temperature of the second holder portion 8H using the substrate temperature adjusting device 9 so that the temperature of the second holder portion 8H substantially matches the temperature of the first holder portion 2H.

本實施形態中,在以第1保持具部2H保持溫度檢測器30時之溫度檢測器30的檢測結果、及以第2保持具部8H保持溫度檢測器30時之溫度檢測器30的檢測結果實質上一致之前,反覆使用溫度檢測器30之第1保持具部2H之溫度資訊的取得動作及第2保持具部8H之溫度資訊的取得 動作、及使用基板溫度調整裝置9之第2保持具部8H的溫度調整動作。反覆使用溫度檢測器30之第1保持具部2H之溫度資訊的取得動作及第2保持具部8H之溫度資訊的取得動作時,搬送裝置10,將溫度檢測器30搬送於第1保持具部2H及第2保持具部8H之間。In the present embodiment, the detection result of the temperature detector 30 when the temperature detector 30 is held by the first holder portion 2H and the detection result of the temperature detector 30 when the temperature detector 30 is held by the second holder portion 8H The acquisition of the temperature information of the first holder portion 2H of the temperature detector 30 and the acquisition of the temperature information of the second holder portion 8H are repeated before the substantially identical The operation and the temperature adjustment operation of the second holder portion 8H of the substrate temperature adjusting device 9 are used. When the temperature information acquisition operation of the first holder portion 2H of the temperature detector 30 and the temperature information acquisition operation of the second holder portion 8H are repeatedly used, the transport device 10 transports the temperature detector 30 to the first holder portion. Between 2H and the second holder portion 8H.

接著,在判斷第1保持具部2H的溫度與第2保持具部8H的溫度成為既定關係的時點,亦即,在判斷第1保持具部2H的溫度與第2保持具部8H的溫度實質上一致的時點,結束第1處理(步驟SA7)。亦即,在第1保持具部2H保持之後使用溫度檢測器30檢測之第1保持具部2H的溫度、及在第1保持具部2H保持溫度檢測器30後經過既定時間後使用溫度檢測器30檢測之第1保持具部2H的溫度大致一致之時點,結束第1處理。在判斷第1保持具部2H的溫度與第2保持具部8H的溫度實質上一致的時點之基板溫度調整裝置9的控制資訊(流過第2保持具部8H內之流體的溫度等),係儲存於控制裝置5。When it is determined that the temperature of the first holder portion 2H and the temperature of the second holder portion 8H are in a predetermined relationship, that is, the temperature of the first holder portion 2H and the temperature of the second holder portion 8H are determined. When the upper level is coincident, the first processing is ended (step SA7). In other words, after the first holder portion 2H is held, the temperature of the first holder portion 2H detected by the temperature detector 30 is used, and after the predetermined time elapses after the first holder portion 2H holds the temperature detector 30, the temperature detector is used. When the temperature of the first holder portion 2H detected by the 30 is substantially the same, the first processing is ended. When it is determined that the temperature of the first holder portion 2H substantially matches the temperature of the second holder portion 8H, the control information of the substrate temperature adjusting device 9 (the temperature of the fluid flowing through the second holder portion 8H, etc.) is determined. It is stored in the control device 5.

第1處理結束後,亦即,使第1保持具部2H的溫度與第2保持具部8H的溫度實質上一致之處理結束後,進行使第1保持具部2H之溫度與液體LQ之溫度成為既定關係的第2處理。當第2處理開始時(步驟SB1),將溫度檢測器30保持在第1保持具部2H。After the completion of the first process, that is, after the process of substantially matching the temperature of the first holder portion 2H with the temperature of the second holder portion 8H is completed, the temperature of the first holder portion 2H and the temperature of the liquid LQ are performed. It becomes the second process of the established relationship. When the second process is started (step SB1), the temperature detector 30 is held in the first holder portion 2H.

控制裝置5,使嘴構件6及終端光學元件FL之下面7與第1保持具部2H所保持之溫度檢測器30相對向,從液體供應裝置17送出液體LQ。從液體供應裝置17送出之液 體LQ,從供應口14供應至第1保持具部2H所保持之溫度檢測器30上。藉此,如圖8A之示意圖所示,在嘴構件6及終端光學元件FL之下面7與第1保持具部2H所保持之溫度檢測器30之間形成液體LQ的液浸空間LS,在溫度檢測器30之表面一部分局部形成液體LQ的液浸區域(步驟SB2)。溫度檢測器30取得第1保持具部2H的溫度資訊。溫度檢測器30所取得之第1保持具部2H的溫度資訊,係透過處理部33之送訊裝置34及收訊裝置35而輸出至控制裝置5。再者,溫度檢測器30取得液浸空間LS(液浸區域)之液體LQ的溫度資訊。溫度檢測器30所取得之液體LQ的溫度資訊,係透過處理部33之送訊裝置34及收訊裝置35而輸出至控制裝置5(步驟SB3)。The control device 5 causes the nozzle member 6 and the lower surface 7 of the terminal optical element FL to face the temperature detector 30 held by the first holder portion 2H, and delivers the liquid LQ from the liquid supply device 17. The liquid sent from the liquid supply device 17 The body LQ is supplied from the supply port 14 to the temperature detector 30 held by the first holder portion 2H. Thereby, as shown in the schematic view of FIG. 8A, the liquid immersion space LS of the liquid LQ is formed between the lower surface 7 of the nozzle member 6 and the terminal optical element FL and the temperature detector 30 held by the first holder portion 2H, at the temperature. A portion of the surface of the detector 30 partially forms a liquid immersion area of the liquid LQ (step SB2). The temperature detector 30 acquires temperature information of the first holder portion 2H. The temperature information of the first holder portion 2H obtained by the temperature detector 30 is output to the control device 5 through the transmission device 34 and the receiving device 35 of the processing unit 33. Further, the temperature detector 30 acquires temperature information of the liquid LQ in the liquid immersion space LS (liquid immersion area). The temperature information of the liquid LQ obtained by the temperature detector 30 is output to the control device 5 through the transmitting device 34 and the receiving device 35 of the processing unit 33 (step SB3).

控制裝置5,根據溫度檢測器30所取得之第1保持具部2H的溫度資訊、及溫度檢測器30所取得之液體LQ的溫度資訊,使用液體溫度調整裝置20來調整從供應口14供應之液體LQ的溫度,以使第1保持具部2H的溫度與液體LQ的溫度成為既定關係(步驟SB4)。The control device 5 adjusts the supply from the supply port 14 using the liquid temperature adjustment device 20 based on the temperature information of the first holder portion 2H obtained by the temperature detector 30 and the temperature information of the liquid LQ obtained by the temperature detector 30. The temperature of the liquid LQ is such that the temperature of the first holder portion 2H and the temperature of the liquid LQ are in a predetermined relationship (step SB4).

本實施形態中,控制裝置5,使用液體溫度調整裝置20來調整液體LQ的溫度,以縮小第1保持具部2H與液體LQ的溫度差。亦即,控制裝置5,使用液體溫度調整裝置20來調整液體LQ的溫度,以使液體LQ的溫度與第1保持具部2H的溫度實質上一致。In the present embodiment, the control device 5 adjusts the temperature of the liquid LQ using the liquid temperature adjusting device 20 to reduce the temperature difference between the first holder portion 2H and the liquid LQ. That is, the control device 5 adjusts the temperature of the liquid LQ using the liquid temperature adjusting device 20 so that the temperature of the liquid LQ substantially matches the temperature of the first holder portion 2H.

本實施形態中,如圖8B所示,在溫度檢測器30之表面一部分局部形成液體LQ的液浸區域。亦即,在溫度檢測 器30之表面,存在有與液浸區域(液浸空間)之液體LQ接觸的部分、及未與液浸區域(液浸空間)之液體LQ接觸的部分。是以,溫度檢測器30,可在與液浸區域之液體LQ接觸的部分取得液體LQ的溫度資訊,在未與液浸區域之液體LQ接觸的部分取得第1保持具部2H的溫度資訊。以此方式,本實施形態中,溫度檢測器30,可同時取得第1保持具部2H的溫度資訊與液體LQ的溫度資訊。此外,第1保持具部2H的溫度資訊與液體LQ的溫度資訊的取得,亦可不為同時。例如,在溫度檢測器30之表面未形成液體LQ的液浸區域時,根據第1保持具部2H所保持之溫度檢測器30的檢測結果取得第1保持具部2H的溫度資訊,在溫度檢測器30之表面一部分形成液體LQ的液浸區域時,根據第1保持具部2H所保持之溫度檢測器30(與液體LQ接觸之部分)的檢測結果取得液體LQ的溫度資訊亦可。In the present embodiment, as shown in Fig. 8B, a liquid immersion area of the liquid LQ is partially formed on a part of the surface of the temperature detector 30. That is, in temperature detection The surface of the device 30 has a portion in contact with the liquid LQ of the liquid immersion area (liquid immersion space) and a portion which is not in contact with the liquid LQ of the liquid immersion area (liquid immersion space). Therefore, the temperature detector 30 obtains temperature information of the liquid LQ at a portion in contact with the liquid LQ in the liquid immersion area, and acquires temperature information of the first holder portion 2H in a portion that is not in contact with the liquid LQ in the liquid immersion area. In this manner, in the present embodiment, the temperature detector 30 can simultaneously acquire the temperature information of the first holder portion 2H and the temperature information of the liquid LQ. Further, the temperature information of the first holder portion 2H and the temperature information of the liquid LQ may not be acquired at the same time. For example, when the liquid immersion area of the liquid LQ is not formed on the surface of the temperature detector 30, the temperature information of the first holder portion 2H is obtained based on the detection result of the temperature detector 30 held by the first holder portion 2H, and the temperature is detected. When a part of the surface of the device 30 forms a liquid immersion area of the liquid LQ, the temperature information of the liquid LQ may be obtained based on the detection result of the temperature detector 30 (the portion in contact with the liquid LQ) held by the first holder portion 2H.

控制裝置5,一邊監測從溫度檢測器30輸出之第1保持具部2H的溫度資訊及液體LQ的溫度資訊,一邊使用液體溫度調整裝置20來調整液體LQ的溫度,以使液體LQ的溫度與第1保持具部2H的溫度實質上一致。接著,在以未與液體LQ接觸之部分之溫度檢測部32檢測之檢測結果、及以與液體LQ接觸之部分之溫度檢測部32檢測之檢測結果實質上一致之前,持續使用溫度檢測器30之第1保持具部2H之溫度資訊的取得動作及液體LQ之溫度資訊的取得動作、及根據該取得之溫度資訊使用液體溫度調整裝置20之液體LQ的溫度調整動作。The control device 5 monitors the temperature information of the first holder portion 2H and the temperature information of the liquid LQ output from the temperature detector 30, and adjusts the temperature of the liquid LQ using the liquid temperature adjusting device 20 so that the temperature of the liquid LQ is The temperature of the first holder portion 2H substantially coincides. Then, the temperature detector 30 is continuously used until the detection result detected by the temperature detecting unit 32 that is not in contact with the liquid LQ and the detection result detected by the temperature detecting unit 32 that is in contact with the liquid LQ substantially match. The operation of acquiring the temperature information of the first holder portion 2H and the operation of acquiring the temperature information of the liquid LQ, and the temperature adjustment operation of the liquid LQ of the liquid temperature adjustment device 20 based on the acquired temperature information.

又,本實施形態中,控制裝置5,一邊使保持溫度檢測器30之基板載台2相對嘴構件6及終端光學元件FL移動於XY方向,一邊進行使用溫度檢測器30之液體LQ之溫度資訊的取得動作及第1保持具部2H之溫度資訊的取得動作。亦即,本實施形態中,在溫度檢測器30之表面之複數個位置依序形成液體LQ的液浸區域,以依序取得液體LQ之溫度資訊及第1保持具部2H之溫度資訊。控制裝置5,處理該等依序取得之複數個溫度資訊,根據該處理結果,調整液體LQ的溫度。例如,控制裝置5,調整液體LQ的溫度,以使複數個溫度的平均值與第1保持具部2H的溫度一致。Further, in the present embodiment, the control device 5 performs the temperature information of the liquid LQ using the temperature detector 30 while moving the substrate stage 2 holding the temperature detector 30 to the nozzle member 6 and the terminal optical element FL in the XY direction. The acquisition operation and the acquisition operation of the temperature information of the first holder portion 2H. That is, in the present embodiment, the liquid immersion area of the liquid LQ is sequentially formed at a plurality of positions on the surface of the temperature detector 30, and the temperature information of the liquid LQ and the temperature information of the first holder portion 2H are sequentially obtained. The control device 5 processes the plurality of temperature information sequentially acquired, and adjusts the temperature of the liquid LQ based on the processing result. For example, the control device 5 adjusts the temperature of the liquid LQ such that the average of the plurality of temperatures coincides with the temperature of the first holder portion 2H.

接著,在判斷第1保持具部2H之溫度與從供應口14供應之液體LQ之溫度實質上一致的時點,結束第2處理(步驟SB5)。在判斷第1保持具部2H之溫度與液體LQ之溫度實質上一致的時點之液體溫度調整裝置20的控制資訊(與液體LQ進行熱交換之流體的溫度等),係儲存於控制裝置5。Next, when it is determined that the temperature of the first holder portion 2H substantially coincides with the temperature of the liquid LQ supplied from the supply port 14, the second process is terminated (step SB5). When it is determined that the temperature of the first holder portion 2H substantially coincides with the temperature of the liquid LQ, the control information of the liquid temperature adjusting device 20 (the temperature of the fluid that exchanges heat with the liquid LQ, etc.) is stored in the control device 5.

結束第1處理及第2處理後,亦即,結束使第1保持具部2H之溫度、第2保持具部8H之溫度、與液體LQ之溫度實質上一致的處理後,進行第3處理以進行光學調整。光學調整包含投影光學系統PL的調整。當第3處理開始時(步驟SC1),進行檢測透過液體LQ而形成之像之狀態的動作(步驟SC2)。本實施形態中,檢測透過投影光學系統PL與液體LQ而形成之圖案像之狀態的動作,係使用空間像測 量裝置23來進行。After the first process and the second process are completed, that is, after the temperature of the first holder portion 2H, the temperature of the second holder portion 8H, and the temperature of the liquid LQ are substantially matched, the third process is performed. Make optical adjustments. The optical adjustment includes adjustment of the projection optical system PL. When the third process is started (step SC1), an operation of detecting the state of the image formed by the liquid LQ is performed (step SC2). In the present embodiment, the operation of detecting the state of the pattern image formed by the transmission of the projection optical system PL and the liquid LQ is performed by using a spatial image test. The measuring device 23 performs this.

如圖9之示意圖所示,為了檢測圖案像的狀態,在光罩載台1配置形成有既定測量圖案的光罩M。控制裝置5,使終端光學元件FL之下面7與上面3F的開口22相對向,以液體LQ充滿終端光學元件FL之下面7與包含開口22之上面3F之間之曝光用光EL的光路空間K之方式形成液浸空間LS。控制裝置5,根據上述第2處理導出、儲存之控制量(調整量),控制液體溫度調整裝置20。藉此,將藉由上述第2處理調整成所欲之溫度的液體LQ供應至測量載台3上。此外,較佳為,調整成測量載台3之上面3F之溫度與第1保持具部2H之溫度實質上一致。亦即,較佳為,調整測量載台3(上面3F)的溫度,以使測量載台3之上面3F之溫度與供應至該上面3F之液體LQ之溫度一致。As shown in the schematic view of FIG. 9, in order to detect the state of the pattern image, the mask M on which the predetermined measurement pattern is formed is disposed on the mask stage 1. The control device 5 causes the lower surface 7 of the terminal optical element FL to face the opening 22 of the upper surface 3F, and fills the optical path space K of the exposure light EL between the lower surface 7 of the terminal optical element FL and the upper surface 3F including the opening 22 with the liquid LQ. The manner of forming the liquid immersion space LS. The control device 5 controls the liquid temperature adjusting device 20 based on the control amount (adjustment amount) derived and stored in the second process. Thereby, the liquid LQ adjusted to the desired temperature by the above-described second processing is supplied to the measurement stage 3. Further, it is preferable that the temperature of the upper surface 3F of the measurement stage 3 is adjusted to substantially match the temperature of the first holder portion 2H. That is, it is preferable to adjust the temperature of the measurement stage 3 (3F above) so that the temperature of the upper surface 3F of the measurement stage 3 coincides with the temperature of the liquid LQ supplied to the upper surface 3F.

控制裝置5,藉由照明系統IL以曝光用光EL照明光罩M。藉由以曝光用光EL照明光罩M,光罩M之圖案像係透過投影光學系統PL及液體LQ投影至開口22。配置於開口22之下方的空間像測量裝置23,檢測透過投影光學系統PL與液體LQ而形成之圖案像之狀態。The control device 5 illuminates the mask M with the exposure light EL by the illumination system IL. By illuminating the mask M with the exposure light EL, the pattern image of the mask M is projected to the opening 22 through the projection optical system PL and the liquid LQ. The space image measuring device 23 disposed below the opening 22 detects a state in which a pattern image formed by the projection optical system PL and the liquid LQ is transmitted.

空間像測量裝置23之測量結果係輸出至控制裝置5。控制裝置5,根據空間像測量裝置23所檢測之圖案像之狀態,使用成像特性調整裝置11,進行投影光學系統PL之光學調整(步驟SC3)。藉此,使投影光學系統PL之成像特性最佳化。接著,結束第3處理(步驟SC4)。又,不使用光罩M,而使用設於光罩載台1之測量用標記亦可。The measurement result of the space image measuring device 23 is output to the control device 5. The control device 5 performs optical adjustment of the projection optical system PL using the imaging characteristic adjustment device 11 based on the state of the pattern image detected by the aerial image measuring device 23 (step SC3). Thereby, the imaging characteristics of the projection optical system PL are optimized. Next, the third process is ended (step SC4). Further, the measurement mark provided on the mask stage 1 may be used without using the mask M.

如上述,使基板P曝光時,在曝光前之基板P保持於基板載台2之第1保持具部2H前,係保持於保持構件8之第2保持具部8H。保持構件8調整第2保持具部8H所保持之基板P的溫度。基板溫度調整裝置9,藉由調整第2保持具部8H的溫度,調整該第2保持具部8H所保持之基板P的溫度。第2保持具部8H的溫度與該第2保持具部8H所保持之經溫度調整後之基板P的溫度成為實質上相等。是以,於第1處理,藉由使第1保持具部2H的溫度與第2保持具部8H的溫度實質上一致,能使第1保持具部2H與以第2保持具部8H調整溫度後之基板P的溫度實質上一致。亦即,藉由第1處理,能使保持構件8之第2保持具部8H所保持之經溫度調整後之基板P的溫度與基板載台2之第1保持具部2H的溫度實質上一致。亦即,藉由上述第1處理,使第1保持具部2H的溫度、第2保持具部8H的溫度、及第2保持具部8H所保持之經溫度調整後之基板P的溫度實質上一致。因此,以第1保持具部2H保持第2保持具部8H所保持之經溫度調整後之基板P時,由於基板P與第1保持具部2H幾乎沒有溫度差,因此能抑制例如基板P與第1保持具部2H的溫度差所導致之基板P的熱變形等。As described above, when the substrate P is exposed, the substrate P before being exposed is held by the second holder portion 8H of the holding member 8 before being held by the first holder portion 2H of the substrate stage 2. The holding member 8 adjusts the temperature of the substrate P held by the second holder portion 8H. The substrate temperature adjusting device 9 adjusts the temperature of the substrate P held by the second holder portion 8H by adjusting the temperature of the second holder portion 8H. The temperature of the second holder portion 8H is substantially equal to the temperature of the temperature-adjusted substrate P held by the second holder portion 8H. In the first process, the first holder portion 2H and the second holder portion 8H can be adjusted in temperature by substantially matching the temperature of the first holder portion 2H with the temperature of the second holder portion 8H. The temperature of the subsequent substrate P is substantially the same. In other words, the temperature of the substrate P after the temperature adjustment of the second holder portion 8H of the holding member 8 can be substantially equal to the temperature of the first holder portion 2H of the substrate stage 2 by the first processing. . In other words, the temperature of the first holder portion 2H, the temperature of the second holder portion 8H, and the temperature of the substrate P after the temperature adjustment by the second holder portion 8H are substantially the same by the first processing. Consistent. Therefore, when the temperature-adjusted substrate P held by the second holder portion 8H is held by the first holder portion 2H, since there is almost no temperature difference between the substrate P and the first holder portion 2H, for example, the substrate P and the substrate P can be suppressed. Thermal deformation of the substrate P due to a temperature difference of the first holder portion 2H.

又,於第2處理,藉由使第1保持具部2H的溫度與液體LQ的溫度實質上一致,能使從供應口14供應之液體LQ的溫度、與第1保持具部2H所保持之基板P的溫度實質上一致。因此,將液體LQ供應於第1保持具部2H所保持之基板P時,由於基板P與液體LQ幾乎無溫度差,因此能抑 制例如基板P與供應之液體LQ之溫度差所導致之液體LQ之光學特性(例如對曝光用光EL的折射率)的變化、基板P的熱變形等。In the second process, the temperature of the first holder portion 2H and the temperature of the liquid LQ substantially match, so that the temperature of the liquid LQ supplied from the supply port 14 can be maintained by the first holder portion 2H. The temperatures of the substrates P are substantially uniform. Therefore, when the liquid LQ is supplied to the substrate P held by the first holder portion 2H, since the substrate P and the liquid LQ have almost no temperature difference, it is possible to suppress For example, a change in the optical characteristics of the liquid LQ (for example, a refractive index of the exposure light EL) caused by a temperature difference between the substrate P and the supplied liquid LQ, thermal deformation of the substrate P, and the like are performed.

又,本實施形態中,由於在第1處理、及第2處理結束後,進行第3處理,因此可抑制終端光學元件FL之下面7與液體LQ之溫度差所導致的成像誤差等,能在使基板P曝光時將所欲之圖案像投影在基板P上。Further, in the present embodiment, since the third process is performed after the completion of the first process and the second process, it is possible to suppress an imaging error caused by a temperature difference between the lower surface 7 of the terminal optical element FL and the liquid LQ, and the like. When the substrate P is exposed, the desired pattern image is projected on the substrate P.

如以上說明,根據本實施形態,能使用溫度檢測器30使保持構件8之第2保持具部8H的溫度與基板載台2之第1保持具部2H的溫度成為所欲之關係。是以,能抑制基板P與第1保持具部2H之溫度差所導致之曝光不良的產生。As described above, according to the present embodiment, the temperature detector 30 can be used to make the temperature of the second holder portion 8H of the holding member 8 and the temperature of the first holder portion 2H of the substrate stage 2 in a desired relationship. Therefore, it is possible to suppress the occurrence of poor exposure due to the temperature difference between the substrate P and the first holder portion 2H.

又,根據本實施形態,能使用溫度檢測器30使第1保持具部2H的溫度與供應至該第1保持具部2H所保持之基板P之液體LQ的溫度成為所欲之關係。是以,能抑制基板P與液體LQ之溫度差所導致之曝光不良的產生。Further, according to the present embodiment, the temperature detector 30 can be used to make the temperature of the first holder portion 2H and the temperature of the liquid LQ supplied to the substrate P held by the first holder portion 2H in a desired relationship. Therefore, it is possible to suppress the occurrence of poor exposure due to the temperature difference between the substrate P and the liquid LQ.

此外,本實施形態中,於第3處理為了檢測圖案像之狀態,使用空間像測量裝置23檢測圖案之空間像,但亦可不使用空間像測量裝置23檢測圖案像之狀態。例如,在第2處理後,透過液體LQ使測試基板曝光(測試曝光),進行該曝光後之測試基板的顯影處理,以例如SEM(掃描式電子顯微鏡)等之圖案形狀檢測裝置來檢測形成於測試基板之圖案的狀態,藉此檢測圖案像的狀態。又,不使用光罩M,而使用設於光罩載台1之測量用標記來進行第3處理亦可。Further, in the present embodiment, the spatial image measuring device 23 detects the spatial image of the pattern in order to detect the state of the pattern image in the third processing, but the state of the pattern image may be detected without using the aerial image measuring device 23. For example, after the second treatment, the test substrate is exposed (test exposure) by the liquid LQ, and the development process of the test substrate after the exposure is performed, and the pattern shape detecting device such as SEM (Scanning Electron Microscope) is used to detect the formation. The state of the pattern of the substrate is tested, thereby detecting the state of the pattern image. Moreover, the third process may be performed using the measurement mark provided on the photomask stage 1 without using the mask M.

(第2實施形態)(Second embodiment)

接著,說明第2實施形態。於以下說明,對與上述實施形態相同或同等之構成部分賦予相同符號,以簡化或省略其說明。Next, a second embodiment will be described. In the following description, the same or equivalent components as those in the above-described embodiments are denoted by the same reference numerals, and the description thereof will be simplified or omitted.

如上述,溫度檢測器30具備複數個溫度檢測部32,可檢測第1保持具部2H的溫度分布、第2保持具部8H的溫度分布、及液浸區域(液浸空間)之液體LQ的溫度分布。As described above, the temperature detector 30 includes a plurality of temperature detecting units 32, and can detect the temperature distribution of the first holder portion 2H, the temperature distribution of the second holder portion 8H, and the liquid LQ of the liquid immersion area (liquid immersion space). Temperature Distribution.

於本實施形態,在用以使第1保持具部2H的溫度與第2保持具部8H的溫度成為既定關係的第1處理,控制裝置5使用溫度檢測器30取得第1保持具部2H之保持面的溫度分布資訊、及第2保持具部8H之保持面的溫度分布資訊。接著,控制裝置5,根據溫度檢測器30所取得之第1保持具部2H的溫度分布資訊及第2保持具部8H的溫度分布資訊,控制基板溫度調整裝置9B。In the first embodiment, the control device 5 acquires the first holder portion 2H using the temperature detector 30 in the first process for setting the temperature of the first holder portion 2H and the temperature of the second holder portion 8H to a predetermined relationship. The temperature distribution information of the holding surface and the temperature distribution information of the holding surface of the second holder portion 8H. Next, the control device 5 controls the substrate temperature adjusting device 9B based on the temperature distribution information of the first holder portion 2H and the temperature distribution information of the second holder portion 8H obtained by the temperature detector 30.

圖10係顯示本實施形態之保持構件8B的示意圖。本實施形態中,基板溫度調整裝置9B可調整第2保持具部8H之保持面的溫度分布。本實施形態中,基板溫度調整裝置9B具有配置於與第2保持具部8H之保持面平行之平面內的複數個帕爾帖元件9P。帕爾帖元件9P之溫度,係依據所施加之電力(包含極性、電流量)而變化。控制裝置5,藉由調整分別施加於複數個帕爾帖元件9P的電力,可調整第2保持具部8H之保持面的溫度分布。Fig. 10 is a schematic view showing the holding member 8B of the present embodiment. In the present embodiment, the substrate temperature adjusting device 9B can adjust the temperature distribution of the holding surface of the second holder portion 8H. In the present embodiment, the substrate temperature adjusting device 9B has a plurality of Peltier elements 9P disposed in a plane parallel to the holding surface of the second holder portion 8H. The temperature of the Peltier element 9P varies depending on the applied electric power (including the polarity, the amount of current). The control device 5 can adjust the temperature distribution of the holding surface of the second holder portion 8H by adjusting the electric power applied to each of the plurality of Peltier elements 9P.

例如,考慮在第1保持具部2H的保持面存在有圖11A之示意圖所示之溫度分布的情形。圖11A之橫軸係第1保持具部2H的保持面在既定方向(例如Y軸方向)的位置,縱 軸係第1保持具部2H之保持面的溫度。例如,因驅動系統2D等的影響,如圖11A所示,第1保持具部2H具有溫度分布時,能以溫度檢測器30檢測該第1保持具部2H的溫度分布。For example, a case where the temperature distribution shown in the schematic view of FIG. 11A exists in the holding surface of the first holder portion 2H is considered. The horizontal axis of FIG. 11A is a position in which the holding surface of the first holder portion 2H is in a predetermined direction (for example, the Y-axis direction), and The temperature of the holding surface of the first holder portion 2H of the shaft system. For example, when the first holder portion 2H has a temperature distribution as shown in FIG. 11A due to the influence of the drive system 2D or the like, the temperature detector 30 can detect the temperature distribution of the first holder portion 2H.

控制裝置5,依據第1保持具部2H之保持面的溫度分布,使用基板溫度調整裝置9B調整第2保持具部8H之保持面的溫度分布。調整第2保持具部8H的溫度分布時,在第2保持具部8H保持溫度檢測器30。控制裝置5,一邊監測從溫度檢測器30輸出之第2保持具部8H的溫度分布資訊,一邊控制基板溫度調整裝置9B的各帕爾帖元件9P。本實施形態中,控制裝置5,控制基板溫度調整裝置9B,以使第1保持具部2H之保持面的溫度分布與第2保持具部8H之保持面的溫度分布一致。圖11B係顯示調整後之第2保持具部8H之保持面之溫度分布的示意圖,橫軸係第2保持具部8H的保持面在既定方向(例如Y軸方向)的位置,縱軸係第2保持具部8H之保持面的溫度。以此方式,本實施形態中,控制裝置5使第1保持具部2H之保持面的溫度分布與第2保持具部8H之保持面的溫度分布實質上一致。亦即,本實施形態中,使第1保持具部2H之保持面的溫度分布與第1保持具部2H保持之前之基板P的溫度分布實質上一致。藉此,能抑制基板P的溫度分布與第1保持具部2H之保持面的溫度分布之差所導致之基板P的熱變形等產生。The control device 5 adjusts the temperature distribution of the holding surface of the second holder portion 8H by the substrate temperature adjusting device 9B in accordance with the temperature distribution of the holding surface of the first holder portion 2H. When the temperature distribution of the second holder portion 8H is adjusted, the temperature detector 30 is held by the second holder portion 8H. The control device 5 controls the Peltier elements 9P of the substrate temperature adjusting device 9B while monitoring the temperature distribution information of the second holder portion 8H output from the temperature detector 30. In the present embodiment, the control device 5 controls the substrate temperature adjusting device 9B such that the temperature distribution of the holding surface of the first holder portion 2H matches the temperature distribution of the holding surface of the second holder portion 8H. 11B is a schematic view showing the temperature distribution of the holding surface of the second holder portion 8H after the adjustment, and the horizontal axis is the position of the holding surface of the second holder portion 8H in a predetermined direction (for example, the Y-axis direction), and the vertical axis is the first axis. 2 The temperature of the holding surface of the holder portion 8H. In this manner, in the present embodiment, the control device 5 substantially matches the temperature distribution of the holding surface of the first holder portion 2H with the temperature distribution of the holding surface of the second holder portion 8H. In other words, in the present embodiment, the temperature distribution of the holding surface of the first holder portion 2H substantially coincides with the temperature distribution of the substrate P before the first holder portion 2H is held. Thereby, it is possible to suppress thermal deformation of the substrate P due to the difference between the temperature distribution of the substrate P and the temperature distribution of the holding surface of the first holder portion 2H.

又,控制裝置5,依據第1保持具部2H之保持面的溫度分布,使用液體溫度調整裝置20調整第1保持具部2H 所保持之基板P上之液體LQ的溫度。亦即,第1保持具部2H之保持面,具有如圖11A所示之溫度分布時,控制裝置5,使基板P曝光時,調整液體溫度調整裝置20,以在基板P之表面之複數個位置分別改變供應至基板P上之液體LQ的溫度。本實施形態中,如圖12之示意圖所示,控制裝置5,控制液體溫度調整裝置20,以使第1保持具部2H之保持面的溫度分布與分別供應至第1保持具部2H所保持之基板P之表面之複數個位置之液體LQ的溫度實質上一致。Moreover, the control device 5 adjusts the first holder portion 2H by using the liquid temperature adjusting device 20 in accordance with the temperature distribution of the holding surface of the first holder portion 2H. The temperature of the liquid LQ on the substrate P held. That is, when the holding surface of the first holder portion 2H has a temperature distribution as shown in FIG. 11A, the control device 5 adjusts the liquid temperature adjusting device 20 to a plurality of surfaces on the substrate P when the substrate P is exposed. The position changes the temperature of the liquid LQ supplied to the substrate P, respectively. In the present embodiment, as shown in the schematic view of Fig. 12, the control device 5 controls the liquid temperature adjusting device 20 so that the temperature distribution of the holding surface of the first holder portion 2H is supplied to the first holder portion 2H. The temperature of the liquid LQ at a plurality of positions on the surface of the substrate P substantially coincides.

如上述,於第2實施形態,即使在第1保持具部2H存在溫度分布時,亦可抑制基板P與第1保持具部2H之溫度差所導致之曝光不良的產生、及基板P與液體LQ之溫度差所導致之曝光不良的產生。As described above, in the second embodiment, even when the temperature distribution of the first holder portion 2H is present, the occurrence of exposure failure due to the temperature difference between the substrate P and the first holder portion 2H and the substrate P and the liquid can be suppressed. The poor exposure caused by the temperature difference of LQ.

此外,於本實施形態,雖使用帕爾帖元件9P進行第2保持具部8H的溫度調整,但與第1實施形態相同,使經溫度調整之流體流過第2保持具部8H內的流路,進行第2保持具部8H的溫度調整亦可。Further, in the present embodiment, the temperature adjustment of the second holder portion 8H is performed by using the Peltier element 9P. However, as in the first embodiment, the temperature-adjusted fluid flows through the flow in the second holder portion 8H. The temperature adjustment of the second holder portion 8H may be performed.

又,使基板P曝光時,與第1實施形態相同,不改變從供應口14供應之液體LQ的溫度亦可。Further, when the substrate P is exposed, the temperature of the liquid LQ supplied from the supply port 14 may not be changed as in the first embodiment.

(第3實施形態)(Third embodiment)

接著,說明第3實施形態。於以下說明,對與上述實施形態相同或同等之構成部分賦予相同符號,以簡化或省略其說明。Next, a third embodiment will be described. In the following description, the same or equivalent components as those in the above-described embodiments are denoted by the same reference numerals, and the description thereof will be simplified or omitted.

圖13係顯示第3實施形態之基板載台2B之一例的圖。圖13中,曝光裝置EX具備調整第1保持具部2H之溫度的 溫度調整裝置40。溫度調整裝置40包含複數個帕爾帖元件40P,可調整第1保持具部2H之保持面的溫度分布。Fig. 13 is a view showing an example of the substrate stage 2B of the third embodiment. In FIG. 13, the exposure apparatus EX is equipped with the temperature which adjusted the temperature of the 1st holder part 2H. Temperature adjustment device 40. The temperature adjustment device 40 includes a plurality of Peltier elements 40P, and the temperature distribution of the holding surface of the first holder portion 2H can be adjusted.

於本實施形態,控制裝置5,能使用溫度調整裝置40調整第1保持具部2H之溫度,以使第1保持具部2H之溫度與第2保持具部8H的溫度成為既定關係。例如,控制裝置5可控制溫度調整裝置40,以使第1保持具部2H之溫度與第2保持具部8H的溫度實質上一致。此外,為了使第1保持具部2H之溫度與第2保持具部8H的溫度成為既定關係,僅進行溫度調整裝置40之第1保持具部2H之溫度調整動作亦可,進行溫度調整裝置40之第1保持具部2H之溫度調整動作、及基板溫度調整裝置9之第2保持具部8H之溫度調整動作之兩者亦可。In the present embodiment, the temperature adjustment device 40 can adjust the temperature of the first holder portion 2H so that the temperature of the first holder portion 2H and the temperature of the second holder portion 8H have a predetermined relationship. For example, the control device 5 can control the temperature adjustment device 40 such that the temperature of the first holder portion 2H substantially matches the temperature of the second holder portion 8H. In addition, in order to make the temperature of the first holder portion 2H and the temperature of the second holder portion 8H have a predetermined relationship, only the temperature adjustment operation of the first holder portion 2H of the temperature adjustment device 40 may be performed, and the temperature adjustment device 40 may be performed. Both the temperature adjustment operation of the first holder portion 2H and the temperature adjustment operation of the second holder portion 8H of the substrate temperature adjustment device 9 may be employed.

此外,僅進行溫度調整裝置40之第1保持具部2H之溫度調整動作時,不設置基板溫度調整裝置9亦可。Further, when only the temperature adjustment operation of the first holder portion 2H of the temperature adjustment device 40 is performed, the substrate temperature adjustment device 9 may not be provided.

又,於本實施形態,控制裝置5,能使用溫度調整裝置40調整第1保持具部2H之溫度,以使第1保持具部2H之溫度與液體LQ的溫度成為既定關係。例如,控制裝置5可控制溫度調整裝置40,以使第1保持具部2H之溫度與液體LQ的溫度實質上一致。此外,為了使第1保持具部2H之溫度與液體LQ的溫度成為既定關係,僅進行溫度調整裝置40之第1保持具部2H之溫度調整動作亦可,進行溫度調整裝置40之第1保持具部2H之溫度調整動作、及液體溫度調整裝置20之液體LQ之溫度調整動作之兩者亦可。此外,僅進行溫度調整裝置40之第1保持具部2H之溫度調整動 作時,不設置液體溫度調整裝置20亦可。又,於本實施形態,雖使用帕爾帖元件40P進行第1保持具部2H的溫度調整,但設置第1保持具部2H內的流路,使經溫度調整之流體流過該流路,進行第1保持具部2H的溫度調整亦可。Further, in the present embodiment, the temperature adjustment device 40 can adjust the temperature of the first holder portion 2H so that the temperature of the first holder portion 2H and the temperature of the liquid LQ have a predetermined relationship. For example, the control device 5 can control the temperature adjustment device 40 such that the temperature of the first holder portion 2H substantially matches the temperature of the liquid LQ. In addition, in order to make the temperature of the first holder portion 2H and the temperature of the liquid LQ have a predetermined relationship, only the temperature adjustment operation of the first holder portion 2H of the temperature adjustment device 40 may be performed, and the first maintenance of the temperature adjustment device 40 may be performed. Both the temperature adjustment operation of the component 2H and the temperature adjustment operation of the liquid LQ of the liquid temperature adjustment device 20 may be performed. Further, only the temperature adjustment of the first holder portion 2H of the temperature adjustment device 40 is performed. In the case of the operation, the liquid temperature adjusting device 20 may not be provided. Further, in the present embodiment, the temperature adjustment of the first holder portion 2H is performed using the Peltier element 40P, but the flow path in the first holder portion 2H is provided, and the temperature-adjusted fluid flows through the flow path. The temperature adjustment of the first holder portion 2H may be performed.

此外,曝光裝置EX具備溫度調整裝置40時,在進行第2處理後,進行第1處理亦可。特別是,較佳為,於第2處理進行第1保持具部2H的溫度調整時,在進行第2處理後,進行第1處理以使第1保持具部2H之溫度與第2保持具部8H的溫度成為既定關係。Further, when the exposure device EX includes the temperature adjustment device 40, the first process may be performed after the second process. In particular, when the temperature of the first holder portion 2H is adjusted in the second process, after the second process, the first process is performed to set the temperature of the first holder portion 2H and the second holder portion. The temperature of 8H becomes a predetermined relationship.

此外,於上述第1~第3實施形態,根據溫度檢測器30所取得之溫度資訊,調整成第1保持具部2H之溫度與第2保持具部8H的溫度實質上一致,但不一致亦可。例如,在將基板P從保持構件8搬送至基板載台2為止之期間,基板P之溫度有可能會變化。此時,預先求出(預測)此搬送中之基板P之溫度變化量,根據該求出之溫度變化量,能以保持構件8調整基板P的溫度。此外,搬送中之基板P之溫度變化量,可藉由例如實驗或模擬等來預先求出。Further, in the above-described first to third embodiments, the temperature of the first holder portion 2H is adjusted to substantially match the temperature of the second holder portion 8H based on the temperature information acquired by the temperature detector 30, but the temperature may be different. . For example, while the substrate P is being transported from the holding member 8 to the substrate stage 2, the temperature of the substrate P may change. At this time, the temperature change amount of the substrate P during the conveyance is obtained (predicted) in advance, and the temperature of the substrate P can be adjusted by the holding member 8 based on the obtained temperature change amount. Further, the amount of temperature change of the substrate P during transportation can be obtained in advance by, for example, an experiment or a simulation.

亦即,保持構件8之基板溫度調整裝置9,考量從保持構件8至基板載台2為止之搬送中之基板P之溫度變化量,調整基板P之溫度,以縮小基板載台2之第1保持具部2H所保持前之基板P與第1保持具部2H的溫度差,亦即,以使第1保持具部2H所保持前之基板P的溫度與第1保持具部2H的溫度實質上一致。藉此,能抑制基板P與第1保持具部2H之溫度差所導致之基板P的熱變形等。In other words, the substrate temperature adjusting device 9 of the holding member 8 measures the temperature change amount of the substrate P during the conveyance from the holding member 8 to the substrate stage 2, and adjusts the temperature of the substrate P to reduce the first of the substrate stage 2 The temperature difference between the substrate P before holding the holder portion 2H and the first holder portion 2H, that is, the temperature of the substrate P before the first holder portion 2H is held and the temperature of the first holder portion 2H Consistent. Thereby, thermal deformation of the substrate P due to a temperature difference between the substrate P and the first holder portion 2H can be suppressed.

又,於上述第1~第3實施形態,基板溫度調整裝置9,藉由調整保持構件8(8H)的溫度,來調整保持構件8(8H)所保持之基板P的溫度,但不調整保持構件8(8H)的溫度,來調整保持構件8(8H)所保持之基板P的溫度亦可。例如,對保持構件8(8H)所保持之基板P照射紅外線,調整基板P的溫度亦可。此時,於第1處理,在保持構件8(8H)所保持之溫度檢測器30進行溫度調度動作,根據此時之溫度檢測器30的檢測結果,進行保持構件8(8H)所保持之基板P之溫度調整與第1保持具部2H之溫度調整之至少一者,以使第1保持具部2H所保持前之基板P的溫度與第1保持具部2H的溫度實質上一致即可。Further, in the above-described first to third embodiments, the substrate temperature adjusting device 9 adjusts the temperature of the holding member 8 (8H) to adjust the temperature of the substrate P held by the holding member 8 (8H), but does not adjust and maintain the temperature. The temperature of the member 8 (8H) may be adjusted to the temperature of the substrate P held by the holding member 8 (8H). For example, the substrate P held by the holding member 8 (8H) may be irradiated with infrared rays, and the temperature of the substrate P may be adjusted. At this time, in the first process, the temperature detector 30 held by the holding member 8 (8H) performs a temperature scheduling operation, and based on the detection result of the temperature detector 30 at this time, the substrate held by the holding member 8 (8H) is performed. At least one of the temperature adjustment of P and the temperature adjustment of the first holder portion 2H may be such that the temperature of the substrate P before the first holder portion 2H is held substantially coincides with the temperature of the first holder portion 2H.

又,於上述第1~第3實施形態,在進行第1處理與第2處理之一者後,進行另一者,但僅進行其中一者亦可。Further, in the above-described first to third embodiments, one of the first processing and the second processing is performed, and the other is performed, but only one of them may be performed.

又,於上述第1~第3實施形態,在進行第1處理與第2處理後,進行第3處理,但省略第3處理亦可。例如,終端光學元件FL之下面7與液體LQ之溫度差所導致之成像誤差在容許範圍內時,可省略第3處理。替代第3處理、或與第3處理同時,進行終端光學元件FL之溫度調整以縮小液體LQ與終端光學元件FL之溫度差亦可。Further, in the above-described first to third embodiments, after the first processing and the second processing, the third processing is performed, but the third processing may be omitted. For example, when the imaging error caused by the temperature difference between the lower surface 7 of the terminal optical element FL and the liquid LQ is within the allowable range, the third processing can be omitted. Instead of the third process or the third process, the temperature adjustment of the terminal optical element FL may be performed to reduce the temperature difference between the liquid LQ and the terminal optical element FL.

又,於上述第1~第3實施形態,調整液體LQ之溫度、第1保持具部2H與保持部8(8H)之至少一者之溫度,以使第1保持具部2H所保持之基板P、及供應至基板P上之液體LQ之溫度與既定基準溫度(例如,進行基板P之曝光之空間的溫度)一致亦可。此時,亦以保持構件8、及第1保 持具部2H保持溫度檢測器30,取得至少保持構件8之溫度及液體LQ之溫度資訊,根據該結果調整液體LQ之溫度、第1保持具部2H與保持部8(8H)之至少一者之溫度即可。Further, in the above-described first to third embodiments, the temperature of the liquid LQ and the temperature of at least one of the first holder portion 2H and the holding portion 8 (8H) are adjusted so that the substrate held by the first holder portion 2H is held. P, and the temperature of the liquid LQ supplied to the substrate P may coincide with a predetermined reference temperature (for example, a temperature at which the exposure of the substrate P is performed). At this time, the holding member 8 and the first one are also protected. The holder 2H holds the temperature detector 30, acquires at least the temperature of the holding member 8 and the temperature information of the liquid LQ, and adjusts the temperature of the liquid LQ and at least one of the first holder portion 2H and the holding portion 8 (8H) based on the result. The temperature can be.

此外,上述各實施形態之液體LQ係水,但亦可為水以外的液體。例如,液體LQ,亦可使用氫氟醚(HFE)、過氟化聚醚(PFPE)、全氟聚醚油、香柏油等。又,液體LQ,亦可使用折射率為1.6~1.8程度者。Further, the liquid LQ of each of the above embodiments is water, but may be a liquid other than water. For example, as the liquid LQ, hydrofluoroether (HFE), perfluoropolyether (PFPE), perfluoropolyether oil, cedar oil or the like can also be used. Further, the liquid LQ may be a refractive index of 1.6 to 1.8.

此外,於上述各實施形態,以液體充滿投影光學系統之終端光學元件之像面(射出面)側的光路空間,但如國際公開第2004/019128號小冊子所揭示,亦能以液體充滿終端光學元件之物體面(入射面)側的光路空間。Further, in each of the above embodiments, the optical path space on the image plane (ejecting surface) side of the terminal optical element of the projection optical system is filled with a liquid, but the terminal optical can be filled with liquid as disclosed in the pamphlet of International Publication No. 2004/019128. The optical path space on the object plane (incident surface) side of the component.

此外,於上述各實施形態,採用在投影光學系統PL與基板P之間局部充滿液體的曝光裝置,但亦可採用美國專利第5825043號等所揭示之在曝光對象之基板表面整體浸沒於液體中之狀態下進行曝光的液浸曝光裝置。Further, in each of the above embodiments, an exposure apparatus that partially fills the liquid between the projection optical system PL and the substrate P is used. However, the entire surface of the substrate to be exposed may be immersed in the liquid as disclosed in U.S. Patent No. 5,825,043. The liquid immersion exposure apparatus that performs exposure in the state.

此外,上述各實施形態之基板P,不僅適用半導體元件製造用之半導體晶圓,亦適用顯示器元件用之玻璃基板、薄膜磁頭用之陶瓷晶圓、或曝光裝置所使用之光罩或標線片之原版(合成石英、矽晶圓)等。Further, the substrate P of each of the above embodiments is applicable not only to a semiconductor wafer for semiconductor element manufacture but also to a glass substrate for a display element, a ceramic wafer for a thin film magnetic head, or a photomask or a reticle for use in an exposure apparatus. The original (synthetic quartz, germanium wafer) and so on.

曝光裝置EX,除了使光罩M與基板P同步移動,使光罩M之圖案掃描曝光之步進掃描方式之掃描型曝光裝置(掃描步進器)之外,亦可採用在光罩M與基板P靜止之狀態下,使光罩M之圖案一次曝光,使基板P依序步進移動之步進重複方式之投影曝光裝置(步進器)。The exposure device EX can be used in the mask M and the scanning type exposure device (scanning stepper) of the step-scan method in which the mask M is moved in synchronization with the substrate P and the pattern of the mask M is scanned and exposed. In a state where the substrate P is stationary, the pattern of the mask M is exposed once, and the substrate P is sequentially stepped and moved in a step-and-repeat type projection exposure apparatus (stepper).

再者,曝光裝置EX,亦可採用接合方式之一次曝光裝置,該接合方式之一次曝光裝置,於步進重複方式之曝光,在第1圖案與基板P大致靜止之狀態下,使用投影光學系統將第1圖案之縮小像轉印於基板P上後,在第2圖案與基板P大致靜止之狀態下,使用投影光學系統使第2圖案之縮小像以與第1圖案部分重疊之方式一次曝光於基板P上。又,接合方式之曝光裝置,亦可採用將至少2個圖案部分重疊轉印於基板P上,使基板P依序移動之步進接合方式的曝光裝置。Further, the exposure apparatus EX may be a single exposure apparatus of a bonding type, and the single exposure apparatus of the bonding method is exposed by the step-and-repeat method, and the projection optical system is used in a state where the first pattern and the substrate P are substantially stationary. After the reduced image of the first pattern is transferred onto the substrate P, the second image and the substrate P are substantially stationary, and the reduced image of the second pattern is partially exposed to overlap with the first pattern by using the projection optical system. On the substrate P. Further, the exposure apparatus of the bonding method may be an exposure apparatus in which a stepwise bonding method in which at least two pattern portions are superimposed and transferred onto the substrate P to sequentially move the substrate P.

又,曝光裝置EX,亦可採用例如美國專利第6611316號所揭示之將2個光罩圖案透過投影光學系統合成於基板上,藉由1次掃描曝光使基板上之1個照射區域大致同時雙重曝光之曝光裝置等。又,曝光裝置EX,亦可採用近接方式之曝光裝置、或反射投射對準器等。Further, the exposure apparatus EX may be formed by synthesizing two mask patterns on a substrate by a projection optical system as disclosed in, for example, US Pat. No. 6613116, and one irradiation area on the substrate is substantially simultaneously doubled by one scanning exposure. Exposure exposure device, etc. Further, the exposure apparatus EX may be a proximity type exposure apparatus, a reflection projection aligner, or the like.

又,曝光裝置EX,亦可採用美國專利第6341007號、美國專利第6400441號、美國專利第6549269號、美國專利第6590634號、美國專利第6208407號、美國專利第6262796號等所揭示之具備複數個基板載台之雙載台型曝光裝置。又,可採用具備複數個基板載台與測量載台的曝光裝置。In addition, the exposure apparatus EX can also be used in the plurals disclosed in U.S. Patent No. 6,341,007, U.S. Patent No. 6,400,441, U.S. Patent No. 6,549,269, U.S. Patent No. 6,509,034, U.S. Patent No. 6,208,407, U.S. Patent No. 6,262,796. Double-stage type exposure apparatus for substrate carriers. Further, an exposure apparatus including a plurality of substrate stages and a measurement stage can be employed.

曝光裝置EX之種類,並不限於使半導體元件圖案曝光於基板P之半導體元件製造用之曝光裝置,亦可廣泛適用於液晶顯示元件製造用或顯示器製造用曝光裝置,或用以製造薄膜磁頭、攝影元件(CCD)、微機器、MEMS(微機電系 統)、及DNA(基因)晶片、或標線片或光罩等的曝光裝置。The type of the exposure apparatus EX is not limited to an exposure apparatus for manufacturing a semiconductor element in which a semiconductor element pattern is exposed on a substrate P, and can be widely applied to an exposure apparatus for manufacturing a liquid crystal display element or a display, or a thin film magnetic head, Photographic element (CCD), micromachine, MEMS (micro electro mechanical system An exposure device such as a DNA (gene) wafer or a reticle or a mask.

此外,於上述各實施形態,使用包含雷射干涉儀之干涉儀系統來測量光罩載台、基板載台、及測量載台的各位置資訊,但並不限於此,亦可使用例如檢測設於各載台之標尺(繞射光柵)的編碼器系統。此時,較佳為,作成具備干涉儀系統與編碼器系統兩者的併合系統,使用干涉儀系統之測量結果進行編碼器系統之測量結果的校正。又,切換使用干涉儀系統與編碼器系統,或使用兩者進行載台之位置控制亦可。Further, in each of the above embodiments, the position information of the mask stage, the substrate stage, and the measurement stage is measured using an interferometer system including a laser interferometer. However, the present invention is not limited thereto, and for example, a detection device may be used. An encoder system for the scale (diffraction grating) of each stage. In this case, it is preferable to form a parallel system including both the interferometer system and the encoder system, and the measurement result of the interferometer system is used to correct the measurement result of the encoder system. Further, the interferometer system and the encoder system may be switched, or both of them may be used for position control of the stage.

又,於上述各實施形態,曝光用光EL亦可使用產生ArF準分子雷射光之光源裝置所產生的ArF準分子雷射光,但例如美國專利第7 023 610號所揭示,亦可使用DFB(分布回饋式)半導體雷射或光纖雷射等之固態雷射光源,包含具有光纖放大器等之光放大部、及波長轉換部等、輸出波長193nm之脈衝光的諧波產生裝置。再者,於上述實施形態,上述各照明區域與投影區域分別為矩形,但亦可為其他形狀,例如圓弧狀等。Further, in each of the above embodiments, the exposure light EL may be an ArF excimer laser light generated by a light source device that generates ArF excimer laser light. However, for example, as disclosed in U.S. Patent No. 7,023,610, DFB ( A distributed laser light source such as a semiconductor laser or a fiber laser includes a light generating unit having an optical amplifier such as a fiber amplifier and a wavelength converting unit, and a harmonic generating device that outputs pulsed light having a wavelength of 193 nm. Furthermore, in the above embodiment, each of the illumination regions and the projection regions is rectangular, but may have other shapes, such as an arc shape.

此外,於上述各實施形態,雖使用於光透射性之基板上形成既定遮光圖案(或相位圖案,減光圖案)的光透射型光罩,但亦可使用例如美國專利第6778257號公報所揭示之可變成形光罩(亦稱為電子光罩、主動光罩、或影像產生器)來代替上述光罩,該可變成形光罩,係根據待曝光圖案之電子資料來形成透射圖案、反射圖案、或發光圖案。可變成形光罩,例如包含非發光型影像顯示元件(空間光調變器) 之一種之DMD(數位微鏡裝置:Digital Miero-mirror Device)等。又,可變成形光罩並不限於DMD,亦可使用以下說明之非發光型影像顯示元件來替代DMD。此處,非發光型影像顯示元件,係將朝既定方向行進之光的振幅(強度)、相位、或偏光狀態空間調變的元件,透射型空間光調變器,除了透射型液晶顯示元件(LCD:Liquid Crystal Display)以外,還可例舉電激發光顯示器(ECD)等。又,反射型空間光調變器,除上述DMD之外,還可例舉反射鏡陣列、反射型液晶顯示元件、電泳顯示器(EPD:Electro Phonetic Display)、電子紙(或電子油墨)、光繞射型光閥(Grating Light Valve)等。Further, in each of the above embodiments, a light-transmitting type mask in which a predetermined light-shielding pattern (or a phase pattern, a light-reducing pattern) is formed on a light-transmitting substrate is used, but it is also disclosed in, for example, US Pat. No. 6,778,257. Instead of the reticle, a variable shaping reticle (also referred to as an electronic reticle, an active reticle, or an image generator) forms a transmission pattern and a reflection according to an electronic material of a pattern to be exposed. Pattern, or illuminating pattern. Variable shaped reticle, for example comprising a non-illuminated image display element (spatial light modulator) One type of DMD (Digital Micro-mirror Device: Digital Miero-mirror Device). Further, the variable shaping mask is not limited to the DMD, and a non-light-emitting image display element described below may be used instead of the DMD. Here, the non-light-emitting image display element is an element that modulates the amplitude (intensity), phase, or polarization state of light traveling in a predetermined direction, and a transmissive spatial light modulator, except for a transmissive liquid crystal display element ( In addition to the LCD: Liquid Crystal Display, an electroluminescence display (ECD) or the like can also be exemplified. Further, the reflective spatial light modulator may be a mirror array, a reflective liquid crystal display element, an electrophoretic display (EPD: Electro Telephonetic Display), an electronic paper (or electronic ink), or a light winding in addition to the above-described DMD. Grating Light Valve, etc.

又,替代具備非發光型影像顯示元件之可變成形光罩,具備包含自發光型影像顯示元件之圖案形成裝置亦可。此時,不需要照明系統。此處,自發光型影像顯示元件,可舉出例如CRT(映像管:Cathode Ray Tube)、無機EL(電致發光)顯示器、有機EL顯示器(OLED:Organic Light Emitting Diode)、LED(發光二極體)顯示器、LD(雷射二極體)顯示器、場發射顯示器(FED:Field Emission Display)、電漿顯示面板(PDP:Plasma Display panel)等。又,具備圖案形成裝置之自發光型影像顯示元件,係使用具有複數個發光點之固態光源晶片、將晶片排列成複數個陣列狀之固態光源晶片陣列、或將複數個發光點安裝於1片基板之類型的裝置等,電氣控制該固態光源晶片來形成圖案亦可。此外,固態光源元件可為無機或有機。Further, instead of the variable shaping mask including the non-light-emitting image display element, a pattern forming device including a self-luminous type image display element may be provided. At this point, no lighting system is required. Here, examples of the self-luminous type image display device include a CRT (Cathode Ray Tube), an inorganic EL (electroluminescence) display, an organic EL display (OLED: Organic Light Emitting Diode), and an LED (Light Emitting Diode) (display), LD (Laser Diode) display, Field Emission Display (FED), Plasma Display Panel (PDP). Further, a self-luminous image display device including a pattern forming device uses a solid-state light source wafer having a plurality of light-emitting points, a solid-state light source wafer array in which a plurality of arrays are arranged in a matrix, or a plurality of light-emitting points are mounted on one sheet. A device of a type such as a substrate may be electrically controlled to form a pattern. Furthermore, the solid state light source elements can be inorganic or organic.

於上述各實施形態,以具備投影光學系統PL之曝光裝置為例進行說明,但亦可採用不使用投影光學系統PL之曝光裝置及曝光方法。如上述,不使用投影光學系統PL時,曝光用光亦透過透鏡等之光學元件照射至基板,在此種光學元件與基板之間之既定空間形成液浸空間。In each of the above embodiments, an exposure apparatus including the projection optical system PL will be described as an example. However, an exposure apparatus and an exposure method that do not use the projection optical system PL may be employed. As described above, when the projection optical system PL is not used, the exposure light is also transmitted to the substrate through an optical element such as a lens, and a predetermined space between the optical element and the substrate forms a liquid immersion space.

又,曝光裝置EX,例如國際公開第2001/035168號小冊子所揭示,可採用在基板P上形成干涉條紋,以使線寬與線距圖案曝光於基板P上的曝光裝置(微影系統)。Further, the exposure apparatus EX, for example, disclosed in the pamphlet of International Publication No. 2001/035168, may employ an exposure apparatus (lithography system) in which interference fringes are formed on the substrate P to expose the line width and the line pitch pattern on the substrate P.

上述實施形態的曝光裝置EX,係藉由組裝包含各構成元件之各種子系統,以能保持既定機械精度、電氣精度、光學精度之方式所製造。為確保此等各種精度,於組裝前後,係對各種光學系統進行用以達成光學精度之調整、對各種機械系統進行用以達成機械精度之調整、對各種電氣系統進行用以達成電氣精度之調整。將各種子系統組裝成曝光裝置之步驟,包含各種子系統彼此之機械連接、電路之配線連接、氣壓迴路之配管連接等。當然,將各種子系統組裝成曝光裝置之步驟前,有各子系統個別之組裝步驟。當各種子系統組裝成曝光裝置之步驟結束後,即進行綜合調整,以確保曝光裝置整體之各種精度。此外,曝光裝置之製造最好是在溫度及真空度等皆受到管理之無塵室進行。The exposure apparatus EX of the above-described embodiment is manufactured by assembling various subsystems including the respective constituent elements so as to maintain predetermined mechanical precision, electrical precision, and optical precision. In order to ensure these various precisions, various optical systems are used to adjust the optical precision before and after assembly, to adjust the mechanical precision for various mechanical systems, and to adjust the electrical precision for various electrical systems. . The steps of assembling various subsystems into an exposure apparatus include mechanical connection of various subsystems, wiring connection of circuits, piping connection of pneumatic circuits, and the like. Of course, prior to the step of assembling the various subsystems into an exposure device, there are individual assembly steps for each subsystem. When the steps of assembling the various subsystems into the exposure apparatus are completed, comprehensive adjustment is performed to ensure various precisions of the entire exposure apparatus. Further, the production of the exposure apparatus is preferably carried out in a clean room in which temperature and vacuum are managed.

如圖14所示,半導體元件等之微元件,係經由下述步驟製造,亦即,進行微元件之功能、性能設計的步驟201、根據該設計步驟製作光罩(標線片)的步驟202、製造元件基 材之基板的步驟203、包含依上述實施形態,使光罩圖案像曝光於基板,使曝光後基板顯影之基板處理(曝光處理)的基板處理步驟204、元件組裝步驟(包含晶片切割步驟、接合步驟、及封裝步驟等之加工步驟)205、檢查步驟206等。As shown in FIG. 14, the micro-element such as a semiconductor element is manufactured through the following steps, that is, a step 201 of performing the function and performance design of the micro-element, and a step 202 of fabricating a photomask (reticle) according to the design procedure. Manufacturing component base The step 203 of the substrate of the material includes the substrate processing step 204 and the component assembly step (including the wafer cutting step and bonding) of the substrate processing (exposure processing) of exposing the mask pattern image to the substrate and developing the exposed substrate according to the above embodiment. Processing steps of steps, and packaging steps, etc.) 205, inspection step 206, and the like.

此外,如上述般說明本發明之實施形態,但本發明可將上述所有構成元件適當組合來使用,又,亦有未使用一部分構成元件之情形。Further, although the embodiments of the present invention have been described above, the present invention can be used by appropriately combining all of the above-described constituent elements, and it is also possible to use a part of the constituent elements.

又,在法令容許的範圍內,援引上述各實施形態及變形例所引用之關於曝光裝置等之所有公開公報及美國專利的揭示,並記載於本說明之一部分。Further, all disclosures of the exposure apparatus and the like disclosed in the above embodiments and modifications are incorporated herein by reference.

2‧‧‧基板載台2‧‧‧Substrate stage

2H‧‧‧第1保持具部2H‧‧‧1st holding part

5‧‧‧控制裝置5‧‧‧Control device

8‧‧‧保持構件8‧‧‧Retaining components

8H‧‧‧第2保持具部8H‧‧‧2nd holder

9‧‧‧基板溫度調整裝置9‧‧‧Substrate temperature adjustment device

10‧‧‧搬送裝置10‧‧‧Transporting device

11‧‧‧成像特性調整裝置11‧‧‧ imaging characteristics adjustment device

14‧‧‧供應口14‧‧‧Supply

20‧‧‧液體溫度調整裝置20‧‧‧Liquid temperature adjustment device

23‧‧‧空間像測量裝置23‧‧‧Space image measuring device

30‧‧‧溫度檢測器30‧‧‧ Temperature detector

40‧‧‧溫度調整裝置40‧‧‧temperature adjustment device

EL‧‧‧曝光用光EL‧‧‧Exposure light

EX‧‧‧曝光裝置EX‧‧‧Exposure device

LQ‧‧‧液體LQ‧‧‧Liquid

LS‧‧‧液浸空間(液浸區域)LS‧‧‧ liquid immersion space (liquid immersion area)

P‧‧‧基板P‧‧‧Substrate

PL‧‧‧投影光學系統PL‧‧‧Projection Optical System

圖1係顯示第1實施形態之曝光裝置之一例的概略構成圖。Fig. 1 is a schematic block diagram showing an example of an exposure apparatus according to the first embodiment.

圖2係從上方觀察基板載台及測量載台的俯視圖。2 is a plan view of the substrate stage and the measurement stage viewed from above.

圖3係用以說明第1實施形態之調整方法的流程圖。Fig. 3 is a flow chart for explaining the adjustment method of the first embodiment.

圖4係用以說明第1實施形態之調整方法的流程圖。Fig. 4 is a flow chart for explaining the adjustment method of the first embodiment.

圖5係用以說明第1實施形態之調整方法的流程圖。Fig. 5 is a flow chart for explaining the adjustment method of the first embodiment.

圖6係顯示溫度檢測器之一例的圖。Fig. 6 is a view showing an example of a temperature detector.

圖7A係用以說明第1實施形態之調整方法的示意圖。Fig. 7A is a schematic view for explaining an adjustment method of the first embodiment.

圖7B係用以說明第1實施形態之調整方法的示意圖。Fig. 7B is a schematic view for explaining the adjustment method of the first embodiment.

圖8A係用以說明第1實施形態之調整方法的示意圖。Fig. 8A is a schematic view for explaining an adjustment method of the first embodiment.

圖8B係用以說明第1實施形態之調整方法的示意圖。Fig. 8B is a schematic view for explaining the adjustment method of the first embodiment.

圖9係用以說明第1實施形態之調整方法的示意圖。Fig. 9 is a schematic view for explaining an adjustment method of the first embodiment.

圖10係用以說明第2實施形態之保持構件的示意圖。Fig. 10 is a schematic view for explaining a holding member of a second embodiment.

圖11A係用以說明第2實施形態之調整方法的示意圖。Fig. 11A is a schematic view for explaining an adjustment method of the second embodiment.

圖11B係用以說明第2實施形態之調整方法的示意圖。Fig. 11B is a schematic view for explaining the adjustment method of the second embodiment.

圖12係用以說明第2實施形態之調整方法的示意圖。Fig. 12 is a schematic view for explaining an adjustment method of the second embodiment.

圖13係用以說明第3實施形態之基板載台的示意圖。Fig. 13 is a schematic view for explaining the substrate stage of the third embodiment.

圖14係顯示微元件之製程之一例的流程圖。Fig. 14 is a flow chart showing an example of a process of a micro component.

AX‧‧‧光軸AX‧‧‧ optical axis

EL‧‧‧曝光用光EL‧‧‧Exposure light

EX‧‧‧曝光裝置EX‧‧‧Exposure device

FL‧‧‧終端光學元件FL‧‧‧Terminal optical components

IL‧‧‧照明系統IL‧‧‧Lighting System

K‧‧‧光路空間K‧‧‧Light path space

LQ‧‧‧液體LQ‧‧‧Liquid

LS‧‧‧液浸空間LS‧‧‧ liquid immersion space

M‧‧‧光罩M‧‧‧Photo Mask

P‧‧‧基板P‧‧‧Substrate

PK‧‧‧鏡筒PK‧‧ lens tube

PL‧‧‧投影光學系統PL‧‧‧Projection Optical System

1‧‧‧光罩載台1‧‧‧Photomask stage

1D‧‧‧驅動系統1D‧‧‧ drive system

1R‧‧‧測量鏡1R‧‧‧Measuring mirror

2‧‧‧基板載台2‧‧‧Substrate stage

2D‧‧‧驅動系統2D‧‧‧ drive system

2F‧‧‧上面2F‧‧‧above

2H‧‧‧第1保持具部2H‧‧‧1st holding part

2R‧‧‧凹部2R‧‧‧ recess

3‧‧‧測量載台3‧‧‧Measurement stage

3D‧‧‧驅動系統3D‧‧‧ drive system

3F‧‧‧上面3F‧‧‧above

4‧‧‧干涉儀系統4‧‧‧Interferometer system

4A,4B,4C‧‧‧雷射干涉儀4A, 4B, 4C‧‧‧ laser interferometer

5‧‧‧控制裝置5‧‧‧Control device

6‧‧‧嘴構件6‧‧‧Mouth components

7‧‧‧下面7‧‧‧Under

8‧‧‧保持構件8‧‧‧Retaining components

8H‧‧‧第2保持具部8H‧‧‧2nd holder

9‧‧‧基板溫度調整裝置9‧‧‧Substrate temperature adjustment device

10‧‧‧搬送裝置10‧‧‧Transporting device

11‧‧‧成像特性調整裝置11‧‧‧ imaging characteristics adjustment device

13‧‧‧基座構件13‧‧‧Base member

14‧‧‧供應口14‧‧‧Supply

15‧‧‧回收口15‧‧‧Recovery

16‧‧‧供應管16‧‧‧Supply tube

17‧‧‧液體供應裝置17‧‧‧Liquid supply device

18‧‧‧回收管18‧‧‧Recycling tube

19‧‧‧液體回收裝置19‧‧‧Liquid recovery unit

20‧‧‧液體溫度調整裝置20‧‧‧Liquid temperature adjustment device

22‧‧‧開口22‧‧‧ openings

23‧‧‧空間像測量裝置23‧‧‧Space image measuring device

42R‧‧‧測量鏡42R‧‧‧Measuring mirror

43R‧‧‧測量鏡43R‧‧‧Measuring mirror

Claims (33)

一種調整方法,係使用於液浸曝光裝置,該液浸曝光裝置具有保持基板之第1保持部、及在以該第1保持部保持該基板前保持該基板之第2保持部,透過液體使該第1保持部所保持之該基板曝光,其特徵在於,包含:以該第1保持部保持溫度檢測器的動作;以該第2保持部保持該溫度檢測器的動作;以及根據該第1保持部所保持之該溫度檢測器的檢測結果、及該第2保持部所保持之該溫度檢測器的檢測結果,調整該第1保持部及該第2保持部之至少一者之溫度的動作。 An adjustment method is used in a liquid immersion exposure apparatus having a first holding portion for holding a substrate and a second holding portion for holding the substrate before holding the substrate by the first holding portion, and permeating the liquid The substrate is exposed by the first holding portion, and includes: an operation of holding the temperature detector by the first holding portion; an operation of holding the temperature detector by the second holding portion; and The detection result of the temperature detector held by the holding unit and the detection result of the temperature detector held by the second holding unit adjusts the temperature of at least one of the first holding unit and the second holding unit . 如申請專利範圍第1項之調整方法,其中,該液浸曝光裝置,在該第1保持部保持該基板前,調整該第2保持部所保持之該基板的溫度。 The method of adjusting the first aspect of the invention, wherein the immersion exposure apparatus adjusts a temperature of the substrate held by the second holding portion before the substrate is held by the first holding portion. 如申請專利範圍第1項之調整方法,其進一步包含將該溫度檢測器從該第2保持部搬送至該第1保持部的動作。 The method of adjusting the first aspect of the patent application, further comprising the operation of transporting the temperature detector from the second holding unit to the first holding unit. 如申請專利範圍第3項之調整方法,其中,該液浸曝光裝置,具有將該基板從該第2保持部搬送至該第1保持部的搬送裝置,使用該搬送裝置將該溫度檢測器從該第2保持部搬送至該第1保持部。 The method of adjusting the third aspect of the invention, wherein the immersion exposure apparatus includes a transport device that transports the substrate from the second holding portion to the first holding portion, and the temperature detector is used by the transport device The second holding unit is transported to the first holding unit. 如申請專利範圍第1至4項中任一項之調整方法,其係進行該第1保持部及該第2保持部之至少一者之溫度調整,以縮小該第1保持部與該第2保持部的溫度差。 The adjustment method according to any one of claims 1 to 4, wherein the temperature adjustment of at least one of the first holding portion and the second holding portion is performed to reduce the first holding portion and the second portion The temperature difference of the holding portion. 如申請專利範圍第1至4項中任一項之調整方法,其 係進行該第1保持部及該第2保持部之至少一者之溫度調整,以縮小以該第1保持部保持前一刻之該基板與該第1保持部的溫度差。 An adjustment method according to any one of claims 1 to 4, Temperature adjustment is performed for at least one of the first holding portion and the second holding portion to reduce a temperature difference between the substrate and the first holding portion immediately before the first holding portion is held. 如申請專利範圍第1至4項中任一項之調整方法,其進一步包含:在該溫度之調整後,將該液體供應至該第1保持部所保持之該溫度檢測器上的動作;以及根據關於該液體之溫度資訊之該溫度檢測器之檢測結果,調整該液體之溫度的動作。 The adjustment method according to any one of claims 1 to 4, further comprising: an action of supplying the liquid to the temperature detector held by the first holding portion after the adjustment of the temperature; The operation of adjusting the temperature of the liquid based on the detection result of the temperature detector regarding the temperature information of the liquid. 如申請專利範圍第7項之調整方法,其係調整該液體之溫度,以縮小該第1保持部與該液體的溫度差。 The method of adjusting the seventh aspect of the patent application is to adjust the temperature of the liquid to reduce the temperature difference between the first holding portion and the liquid. 如申請專利範圍第7項之調整方法,其進一步包含:在調整該液體之溫度後,檢測透過該液體形成之像之狀態的動作;以及根據該檢測之像之狀態,進行光學調整的動作。 The method of adjusting the seventh aspect of the patent application, further comprising: an operation of detecting a state of the image formed by the liquid after adjusting the temperature of the liquid; and an optical adjustment operation based on a state of the detected image. 如申請專利範圍第9項之調整方法,其中,該液浸曝光裝置具備投影光學系統;該光學調整包含該投影光學系統的調整。 The method of adjusting the ninth aspect of the invention, wherein the immersion exposure apparatus is provided with a projection optical system; the optical adjustment comprises adjustment of the projection optical system. 如申請專利範圍第1至4項中任一項之調整方法,其中,該第1保持部及該第2保持部之至少一者之溫度調整,包含該第1保持部及該第2保持部之至少一者之溫度分布的調整。 The adjustment method according to any one of the first to fourth aspect, wherein the temperature adjustment of at least one of the first holding portion and the second holding portion includes the first holding portion and the second holding portion Adjustment of the temperature distribution of at least one of them. 如申請專利範圍第1至4項中任一項之調整方法,其中,從該第1保持部所保持之該溫度檢測器之檢測結果 取得該第1保持部的溫度資訊,從該第2保持部所保持之該溫度檢測器之檢測結果取得該第2保持部的溫度資訊。 The adjustment method according to any one of claims 1 to 4, wherein the detection result of the temperature detector held by the first holding portion The temperature information of the first holding unit is obtained, and the temperature information of the second holding unit is obtained from the detection result of the temperature detector held by the second holding unit. 一種調整方法,係使用於液浸曝光裝置,該液浸曝光裝置具有保持基板之保持部,透過液體使該保持部所保持之該基板曝光,其特徵在於,包含:以該保持部所保持之溫度檢測器取得關於該保持部之溫度之第1資訊的動作;以該溫度檢測器取得關於已供應至該溫度檢測器上之液體之溫度之第2資訊的動作;以及根據該第1資訊與該第2資訊,調整該保持部及該液體之至少一者之溫度的動作;該溫度檢測器具有與該基板實質上相同之外形,且能藉由配置在彼此不同之複數個位置之溫度檢測部測量該保持部之溫度或該液體之溫度且以無線進行通訊。 An adjustment method for use in a liquid immersion exposure apparatus having a holding portion for holding a substrate and exposing the substrate held by the holding portion through a liquid, comprising: holding the holding portion The temperature detector obtains the first information about the temperature of the holding portion; the temperature detector acquires the second information about the temperature of the liquid supplied to the temperature detector; and based on the first information The second information is an operation of adjusting a temperature of at least one of the holding portion and the liquid; the temperature detector has substantially the same outer shape as the substrate, and can be detected by temperature at a plurality of positions different from each other The portion measures the temperature of the holding portion or the temperature of the liquid and communicates wirelessly. 如申請專利範圍第13項之調整方法,其中,該第1資訊與該第2資訊之取得,包含在該溫度檢測器表面之一部分形成該液體之液浸區域的動作;在該溫度檢測器之與該液浸區域之該液體接觸的部分取得該第2資訊;在該溫度檢測器之未與該液浸區域之該液體接觸的部分取得該第1資訊。 The method of adjusting the scope of claim 13 wherein the obtaining of the first information and the second information comprises an operation of forming a liquid immersion area of the liquid on a surface of the temperature detector; wherein the temperature detector is The second information is obtained by a portion in contact with the liquid in the liquid immersion area, and the first information is obtained in a portion of the temperature detector that is not in contact with the liquid in the liquid immersion area. 如申請專利範圍第14項之調整方法,其中,在該溫度檢測器表面之複數個位置依序形成該液浸區域,依序取得該第2資訊與該第1資訊。 The adjustment method of claim 14, wherein the liquid immersion area is sequentially formed at a plurality of positions on the surface of the temperature detector, and the second information and the first information are sequentially acquired. 如申請專利範圍第13至15項中任一項之調整方法,其係進行該保持部及該液體之至少一者之溫度調整,以縮小該保持部與該液體的溫度差。 The method of adjusting according to any one of claims 13 to 15, wherein the temperature adjustment of at least one of the holding portion and the liquid is performed to reduce a temperature difference between the holding portion and the liquid. 如申請專利範圍第13至15項中任一項之調整方法,其中,該保持部及該液體之至少一者之溫度調整,包含該保持部及該液體之至少一者之溫度分布的調整。 The method of adjusting according to any one of claims 13 to 15, wherein the temperature adjustment of at least one of the holding portion and the liquid includes adjustment of a temperature distribution of at least one of the holding portion and the liquid. 如申請專利範圍第13至15項中任一項之調整方法,其進一步包含:在進行該保持部及該液體之至少一者之溫度調整後,檢測透過該液體形成之像之狀態的動作;以及根據該檢測之像之狀態,進行光學調整的動作。 The method of adjusting according to any one of claims 13 to 15, further comprising: an operation of detecting a state of transmitting an image formed by the liquid after performing temperature adjustment of at least one of the holding portion and the liquid; And an optical adjustment operation based on the state of the detected image. 如申請專利範圍第18項之調整方法,其中,該液浸曝光裝置具備投影光學系統;該光學調整包含該投影光學系統的調整。 The adjustment method of claim 18, wherein the immersion exposure device is provided with a projection optical system; and the optical adjustment comprises adjustment of the projection optical system. 如申請專利範圍第1至4、13至15項中任一項之調整方法,其中,該溫度檢測器具有與該基板之外形大致相同的外形。 The adjustment method according to any one of claims 1 to 4, wherein the temperature detector has substantially the same outer shape as the outer shape of the substrate. 一種元件製造方法,其包含:使用以申請專利範圍第1至20項中任一項之調整方法調整後之液浸曝光裝置使基板曝光的動作;以及使該曝光後基板顯影的動作。 An element manufacturing method comprising: an operation of exposing a substrate by using a immersion exposure apparatus adjusted by the adjustment method of any one of claims 1 to 20; and an operation of developing the exposed substrate. 一種曝光裝置,係透過液體以曝光用光使基板曝光,其特徵在於,具備:第1保持部,可在該曝光用光照射之位置保持該基板; 第2保持部,在該第1保持部保持該基板前保持該基板,且調整該基板之溫度;搬送裝置,將該第2保持部所保持之溫度檢測器從該第2保持部搬送至該第1保持部;以及調整裝置,根據該第1保持部所保持之該溫度檢測器的檢測結果、及該第2保持部所保持之該溫度檢測器的檢測結果,調整該第1保持部及該第2保持部之至少一者之溫度。 An exposure apparatus for exposing a substrate by exposing light through a liquid, comprising: a first holding portion that can hold the substrate at a position where the exposure light is irradiated; The second holding unit holds the substrate before the substrate is held by the first holding unit, and adjusts the temperature of the substrate. The transport device transports the temperature detector held by the second holding unit from the second holding unit to the second holding unit. And a first holding unit; and an adjustment device that adjusts the first holding unit based on a detection result of the temperature detector held by the first holding unit and a detection result of the temperature detector held by the second holding unit The temperature of at least one of the second holding portions. 如申請專利範圍第22項之曝光裝置,其中,該搬送裝置,能將該基板從該第2保持部搬送至該第1保持部。 The exposure apparatus of claim 22, wherein the transport apparatus is capable of transporting the substrate from the second holding unit to the first holding unit. 如申請專利範圍第22或23項之曝光裝置,其進一步具備將該液體供應至該第1保持部所保持之該溫度檢測器的供應口;該調整裝置,根據該溫度檢測器所取得之該液體的溫度資訊,調整該供應之液體的溫度。 The exposure apparatus of claim 22 or 23, further comprising: a supply port for supplying the liquid to the temperature detector held by the first holding portion; the adjusting device, according to the temperature detector The temperature information of the liquid adjusts the temperature of the supplied liquid. 如申請專利範圍第24項之曝光裝置,其係調整該液體之溫度,以縮小該第1保持部與該液體的溫度差。 The exposure apparatus of claim 24, wherein the temperature of the liquid is adjusted to reduce a temperature difference between the first holding portion and the liquid. 如申請專利範圍第22或23項之曝光裝置,其進一步具備:像檢測器,檢測透過該液體形成之像的狀態;以及光學調整裝置,係根據該檢測之像之狀態,進行光學調整;在該液體之溫度調整後,使用該像檢測器檢測該像的狀態,根據該檢測之結果,使用該光學調整裝置進行該光 學調整。 An exposure apparatus according to claim 22 or 23, further comprising: an image detector for detecting a state of an image formed by the liquid; and an optical adjustment device for optically adjusting according to a state of the detected image; After the temperature of the liquid is adjusted, the image detector detects the state of the image, and based on the result of the detection, the light is used to perform the light. Learn to adjust. 一種曝光裝置,係透過液體以曝光用光使基板曝光,其特徵在於,具備:保持部,可在該曝光用光照射之位置保持該基板;供應口,用以供應該液體;以及調整裝置,調整該保持部及該液體之至少一者之溫度;該調整裝置根據該保持部及該液體之溫度資訊,調整該保持部及該液體之至少一者之溫度,該溫度資訊,係藉由將該液體從該供應口供應至該保持部所保持之溫度檢測器上,以該溫度檢測器獲得;該溫度檢測器具有與該基板實質上相同之外形,且能藉由配置在彼此不同之複數個位置之溫度檢測部測量該保持部之溫度或該液體之溫度且以無線進行通訊。 An exposure apparatus for exposing a substrate by exposing light through a liquid, comprising: a holding portion that holds the substrate at a position where the exposure light is irradiated; a supply port for supplying the liquid; and an adjusting device Adjusting a temperature of at least one of the holding portion and the liquid; the adjusting device adjusts a temperature of at least one of the holding portion and the liquid according to the temperature information of the holding portion and the liquid, wherein the temperature information is The liquid is supplied from the supply port to a temperature detector held by the holding portion, and is obtained by the temperature detector; the temperature detector has substantially the same outer shape as the substrate, and can be configured by being plural in different numbers from each other The temperature detecting unit of each position measures the temperature of the holding portion or the temperature of the liquid and communicates wirelessly. 如申請專利範圍第27項之曝光裝置,其中,該溫度檢測器,在與從該供應口供應之液體接觸之部分取得該液體的溫度資訊,在未與從該供應口供應之液體接觸之部分取得該保持部的溫度資訊。 The exposure apparatus of claim 27, wherein the temperature detector obtains temperature information of the liquid at a portion in contact with the liquid supplied from the supply port, and is in contact with a liquid supplied from the supply port. The temperature information of the holding portion is obtained. 如申請專利範圍第28項之曝光裝置,其係調整該液體之溫度,以縮小該保持部與該液體的溫度差。 An exposure apparatus according to claim 28, wherein the temperature of the liquid is adjusted to reduce a temperature difference between the holding portion and the liquid. 如申請專利範圍第28或29項之曝光裝置,其進一步具備:像檢測器,檢測透過該液體形成之像的狀態;以及光學調整裝置,係根據該檢測之像之狀態,進行光學調整; 在該液體之溫度調整後,使用該像檢測器檢測該像的狀態,根據該檢測之結果,使用該光學調整裝置進行該光學調整。 An exposure apparatus according to claim 28 or 29, further comprising: an image detector for detecting a state of an image formed by the liquid; and an optical adjustment device for optically adjusting according to a state of the detected image; After the temperature of the liquid is adjusted, the image detector detects the state of the image, and based on the result of the detection, the optical adjustment is performed using the optical adjustment device. 一種元件製造方法,其包含:使用申請專利範圍第22至30項中任一項之曝光裝置使基板曝光的動作;以及使該曝光後基板顯影的動作。 An element manufacturing method comprising: an operation of exposing a substrate using an exposure apparatus according to any one of claims 22 to 30; and an operation of developing the exposed substrate. 如申請專利範圍第13項之調整方法,其中,該第1資訊與該第2資訊之取得係在該溫度檢測器保持在該保持部之狀態下並行測量。 The method of adjusting the scope of claim 13, wherein the obtaining of the first information and the second information is performed in parallel while the temperature detector is held in the holding portion. 如申請專利範圍第27項之曝光裝置,其中,該保持部之溫度資訊及該液體之溫度資訊係在該溫度檢測器保持在該保持部之狀態下並行測量。The exposure apparatus of claim 27, wherein the temperature information of the holding portion and the temperature information of the liquid are measured in parallel while the temperature detector is held in the holding portion.
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