[go: up one dir, main page]

TWI465601B - - Google Patents

Info

Publication number
TWI465601B
TWI465601B TW101151262A TW101151262A TWI465601B TW I465601 B TWI465601 B TW I465601B TW 101151262 A TW101151262 A TW 101151262A TW 101151262 A TW101151262 A TW 101151262A TW I465601 B TWI465601 B TW I465601B
Authority
TW
Taiwan
Application number
TW101151262A
Other versions
TW201343958A (zh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of TW201343958A publication Critical patent/TW201343958A/zh
Application granted granted Critical
Publication of TWI465601B publication Critical patent/TWI465601B/zh

Links

Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D19/00—Arrangements of controlling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D21/00—Arrangement of monitoring devices; Arrangement of safety devices
    • F27D21/0014—Devices for monitoring temperature
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D21/00—Arrangement of monitoring devices; Arrangement of safety devices
    • F27D21/04—Arrangement of indicators or alarms
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D19/00—Arrangements of controlling devices
    • F27D2019/0006—Monitoring the characteristics (composition, quantities, temperature, pressure) of at least one of the gases of the kiln atmosphere and using it as a controlling value
    • F27D2019/0025—Monitoring the temperature of a part or of an element of the furnace structure

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
TW101151262A 2012-03-21 2012-12-28 控制化學氣相沉積腔室內的基底加熱的裝置及方法 TW201343958A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201210077039.4A CN102534567B (zh) 2012-03-21 2012-03-21 控制化学气相沉积腔室内的基底加热的装置及方法

Publications (2)

Publication Number Publication Date
TW201343958A TW201343958A (zh) 2013-11-01
TWI465601B true TWI465601B (zh) 2014-12-21

Family

ID=46342559

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101151262A TW201343958A (zh) 2012-03-21 2012-12-28 控制化學氣相沉積腔室內的基底加熱的裝置及方法

Country Status (5)

Country Link
US (2) US9851151B2 (zh)
KR (1) KR101648082B1 (zh)
CN (1) CN102534567B (zh)
TW (1) TW201343958A (zh)
WO (1) WO2013139288A1 (zh)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102534567B (zh) 2012-03-21 2014-01-15 中微半导体设备(上海)有限公司 控制化学气相沉积腔室内的基底加热的装置及方法
CN103076826A (zh) * 2012-12-11 2013-05-01 光垒光电科技（上海）有限公司 多温区温度控制系统及其控制方法
CN103898477A (zh) * 2012-12-26 2014-07-02 光达光电设备科技（嘉兴）有限公司 一种衬底支承座
CN103074617A (zh) * 2012-12-26 2013-05-01 光达光电设备科技（嘉兴）有限公司 控制系统及其控制方法
CN103911603A (zh) * 2013-01-05 2014-07-09 光达光电设备科技（嘉兴）有限公司 监控装置、监控方法及气相沉积设备
CN104213104B (zh) * 2013-05-31 2016-07-13 理想晶延半导体设备（上海）有限公司 化学气相沉积中衬底温度的控制方法
US10438795B2 (en) 2015-06-22 2019-10-08 Veeco Instruments, Inc. Self-centering wafer carrier system for chemical vapor deposition
USD810705S1 (en) 2016-04-01 2018-02-20 Veeco Instruments Inc. Self-centering wafer carrier for chemical vapor deposition
USD819580S1 (en) 2016-04-01 2018-06-05 Veeco Instruments, Inc. Self-centering wafer carrier for chemical vapor deposition
JP1584906S (zh) * 2017-01-31 2017-08-28
JP1584241S (zh) * 2017-01-31 2017-08-21
DE102018125531A1 (de) * 2018-10-15 2020-04-16 Aixtron Se Vorrichtung und Verfahren zur Regelung der Temperatur in einem CVD-Reaktor
US11542604B2 (en) 2019-11-06 2023-01-03 PlayNitride Display Co., Ltd. Heating apparatus and chemical vapor deposition system
TWI711717B (zh) * 2019-11-06 2020-12-01 錼創顯示科技股份有限公司 加熱裝置及化學氣相沉積系統
TWI727907B (zh) * 2019-11-06 2021-05-11 錼創顯示科技股份有限公司 加熱裝置及化學氣相沉積系統
JP1782543S (ja) * 2023-09-29 2024-10-17 プラズマ処理装置用サセプタリング
JP1782485S (ja) * 2023-09-29 2024-10-17 プラズマ処理装置用サセプタリング
CN119920716A (zh) * 2023-10-31 2025-05-02 北京北方华创微电子装备有限公司 曲线的获取方法、温度控制方法、电子设备及半导体设备
CN118963456B (zh) * 2024-10-17 2025-01-24 青岛四方思锐智能技术有限公司 一种反应腔室温度的控制系统、方法及电子设备

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001081559A (ja) * 1999-09-09 2001-03-27 Mitsubishi Heavy Ind Ltd プラズマｃｖｄ装置における温度制御方法
TW200416296A (en) * 2002-12-05 2004-09-01 Tokyo Electron Ltd Film-forming method and apparatus using plasma CVD

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4129118A (en) * 1976-07-23 1978-12-12 Samuel G. Dawson Method and apparatus for providing differential temperature thermostat control for solar hot water systems
GB2103772B (en) * 1981-08-12 1984-09-26 British Nuclear Fuels Ltd Rotary kiln arrangements
US4495402A (en) * 1981-10-02 1985-01-22 W. G. Whitney Corporation Warmer for temperature conditioning wet dressings and other articles
JPS6222077A (ja) * 1985-07-22 1987-01-30 Toshiba Corp 電子部品測定装置
JPS62222077A (ja) * 1986-03-20 1987-09-30 Nec Corp 常圧ｃｖｄ装置
US5006695A (en) * 1989-09-07 1991-04-09 Elliott Robert C Process controller including power level control and method of operation
TW451275B (en) * 1999-06-22 2001-08-21 Tokyo Electron Ltd Metal organic chemical vapor deposition method and apparatus
DE60024774T2 (de) * 2000-02-03 2006-09-07 Mettler-Toledo Gmbh Modulationsverfahren und Vorrichtung für die Thermoanalyse eines Materials
US6492625B1 (en) 2000-09-27 2002-12-10 Emcore Corporation Apparatus and method for controlling temperature uniformity of substrates
JP2003105546A (ja) * 2001-10-02 2003-04-09 Matsushita Electric Ind Co Ltd 化学的気相成長装置及びそれを用いた化学的気相成長方法
US8226605B2 (en) * 2001-12-17 2012-07-24 Medical Solutions, Inc. Method and apparatus for heating solutions within intravenous lines to desired temperatures during infusion
CN1320157C (zh) 2003-12-06 2007-06-06 厦门大学 集硅片加热沉积于一体的化学气相沉积方法
JP4786925B2 (ja) 2005-04-04 2011-10-05 東京エレクトロン株式会社 基板処理方法および基板処理装置
FR2900226B1 (fr) 2006-04-25 2017-09-29 Messier Bugatti Four de traitement ou analogue
US8151872B2 (en) * 2007-03-16 2012-04-10 Centipede Systems, Inc. Method and apparatus for controlling temperature
US20090194024A1 (en) 2008-01-31 2009-08-06 Applied Materials, Inc. Cvd apparatus
JP4998333B2 (ja) * 2008-03-08 2012-08-15 東京エレクトロン株式会社 温度測定装置、載置台構造及び熱処理装置
CN202267663U (zh) * 2008-06-06 2012-06-06 魄金莱默保健科学有限公司 量热计及其控制系统
FI123769B (fi) 2009-02-13 2013-10-31 Beneq Oy Kaasukasvatusreaktori
CN101693991B (zh) * 2009-10-28 2011-07-20 新奥光伏能源有限公司 一种等离子加强化学气相沉积设备
US9034142B2 (en) 2009-12-18 2015-05-19 Novellus Systems, Inc. Temperature controlled showerhead for high temperature operations
US8986451B2 (en) 2010-05-25 2015-03-24 Singulus Mocvd Gmbh I. Gr. Linear batch chemical vapor deposition system
CN101906622B (zh) * 2010-08-20 2013-03-20 江苏中晟半导体设备有限公司 用于mocvd系统中控制外延片温度及均匀性的装置与方法
CN101949009B (zh) * 2010-09-07 2012-09-26 理想能源设备(上海)有限公司 等离子体化学气相沉积基座温度控制方法
JP5703114B2 (ja) * 2011-04-28 2015-04-15 株式会社フジキン 原料の気化供給装置
CN102534567B (zh) 2012-03-21 2014-01-15 中微半导体设备(上海)有限公司 控制化学气相沉积腔室内的基底加热的装置及方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001081559A (ja) * 1999-09-09 2001-03-27 Mitsubishi Heavy Ind Ltd プラズマｃｖｄ装置における温度制御方法
TW200416296A (en) * 2002-12-05 2004-09-01 Tokyo Electron Ltd Film-forming method and apparatus using plasma CVD

Also Published As

Publication number Publication date
US9851151B2 (en) 2017-12-26
CN102534567B (zh) 2014-01-15
US10281215B2 (en) 2019-05-07
US20180112919A1 (en) 2018-04-26
US20150024330A1 (en) 2015-01-22
KR101648082B1 (ko) 2016-08-12
TW201343958A (zh) 2013-11-01
CN102534567A (zh) 2012-07-04
KR20140136482A (ko) 2014-11-28
WO2013139288A1 (zh) 2013-09-26

Similar Documents

Publication Publication Date Title
BR112014017635A2 (zh)
BR112014017614A2 (zh)
BR112014017625A2 (zh)
BR112014017659A2 (zh)
BR112014017592A2 (zh)
BR112014017607A2 (zh)
BR112014017646A2 (zh)
BR112014017638A2 (zh)
BR112013027865A2 (zh)
BR112014017609A2 (zh)
BR112014017644A2 (zh)
BR112014017634A2 (zh)
BR112014017588A2 (zh)
BR112014013184A8 (zh)
BR112014018525A2 (zh)
BR112014017618A2 (zh)
BR112014017647A2 (zh)
BR112014017623A2 (zh)
BR112014017652A2 (zh)
BR112014017630A2 (zh)
BR112014017627A2 (zh)
BR112014017621A2 (zh)
BR112014017631A2 (zh)
BR112014017641A2 (zh)
BR112014017622A2 (zh)