TWI461831B - Method of manufacturing a glass substrate for a mask blank, method of manufacturing a mask blank and method of manufacturing a photomask for exposure - Google Patents
Method of manufacturing a glass substrate for a mask blank, method of manufacturing a mask blank and method of manufacturing a photomask for exposure Download PDFInfo
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- TWI461831B TWI461831B TW099100401A TW99100401A TWI461831B TW I461831 B TWI461831 B TW I461831B TW 099100401 A TW099100401 A TW 099100401A TW 99100401 A TW99100401 A TW 99100401A TW I461831 B TWI461831 B TW I461831B
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- glass substrate
- light
- substrate
- inspection
- end surface
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- 239000000758 substrate Substances 0.000 title claims description 544
- 239000011521 glass Substances 0.000 title claims description 419
- 238000004519 manufacturing process Methods 0.000 title claims description 122
- 238000007689 inspection Methods 0.000 claims description 373
- 230000007547 defect Effects 0.000 claims description 227
- 238000000034 method Methods 0.000 claims description 48
- 230000007261 regionalization Effects 0.000 claims description 14
- 238000002360 preparation method Methods 0.000 claims description 4
- 239000010408 film Substances 0.000 claims 16
- 239000010409 thin film Substances 0.000 claims 2
- 201000009310 astigmatism Diseases 0.000 claims 1
- 238000005498 polishing Methods 0.000 description 25
- 239000000463 material Substances 0.000 description 19
- 229920002120 photoresistant polymer Polymers 0.000 description 13
- 230000010363 phase shift Effects 0.000 description 12
- 229910052723 transition metal Inorganic materials 0.000 description 11
- 150000003624 transition metals Chemical class 0.000 description 11
- 230000002950 deficient Effects 0.000 description 10
- 210000003462 vein Anatomy 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 238000001514 detection method Methods 0.000 description 9
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 8
- 229910052804 chromium Inorganic materials 0.000 description 8
- 239000011651 chromium Substances 0.000 description 8
- 230000003746 surface roughness Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 4
- 230000002411 adverse Effects 0.000 description 4
- 239000006121 base glass Substances 0.000 description 4
- 230000001965 increasing effect Effects 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 229910052726 zirconium Inorganic materials 0.000 description 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052707 ruthenium Inorganic materials 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000045 transition metal hydride Inorganic materials 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
- G03F1/84—Inspecting
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/958—Inspecting transparent materials or objects, e.g. windscreens
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
- G01N21/645—Specially adapted constructive features of fluorimeters
- G01N21/6456—Spatial resolved fluorescence measurements; Imaging
- G01N2021/646—Detecting fluorescent inhomogeneities at a position, e.g. for detecting defects
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
- G01N2021/95676—Masks, reticles, shadow masks
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
Description
本發明係關於一種光罩基底用玻璃基板之製造方法、光罩基底之製造方法及曝光用光罩之製造方法。The present invention relates to a method for producing a glass substrate for a mask base, a method for producing a mask substrate, and a method for producing an exposure mask.
近年來,隨著半導體元件之微細化,於光微影技術中,作為曝光之光,向來使用例如ArF準分子雷射(曝光波長為193nm)等之短波長之光。又,於光微影技術中所使用之曝光用光罩及用以製造該曝光用光罩之光罩基底之技術領域中,亦在迅速開展可對上述短波長之曝光之光加以遮蔽之遮光膜、使相位發生變化之移相膜之開發,並已提出各種各樣之膜材料。In recent years, with the miniaturization of semiconductor elements, in the photolithography technique, short-wavelength light such as an ArF excimer laser (exposure wavelength of 193 nm) has been used as an exposure light. Moreover, in the technical field of the exposure mask used in the photolithography technology and the mask base for manufacturing the exposure mask, the shading which can shield the short-wavelength exposure light is also rapidly performed. The development of a film and a phase shifting film that changes the phase has been proposed for various film materials.
此處,對於上述光罩基底用玻璃基板、用以製造該光罩基底用玻璃基板之合成石英玻璃基板之內部,要求不存在異物或氣泡等缺陷。在專利文獻1中,揭示有如下缺陷檢測方法:當向玻璃基板內導入有波長為200nm以下之波長之檢查光時檢測出由玻璃基板之內部缺陷所產生之螢光,從而檢測出玻璃基板中存在之內部缺陷(異物或氣泡等)。Here, it is required that the inside of the glass substrate for a mask base and the synthetic quartz glass substrate for manufacturing the glass substrate for the mask base be free from defects such as foreign matter or bubbles. Patent Document 1 discloses a defect detecting method in which a fluorescent light generated by an internal defect of a glass substrate is detected when an inspection light having a wavelength of 200 nm or less is introduced into a glass substrate, thereby detecting a glass substrate. Internal defects (foreign objects or bubbles, etc.).
專利文獻1:日本專利特開2007-86050號公報Patent Document 1: Japanese Patent Laid-Open Publication No. 2007-86050
然而,目前已發現,即使係藉由上述缺陷檢測方法而判定為不存在內部缺陷之玻璃基板,亦存在特別是於表面、背面之附近殘留有微小缺陷之情形。本案發明者對其原因進行調查,結果弄清以下事實。However, it has been found that even in the case of the glass substrate which is determined to have no internal defects by the above-described defect detecting method, there are cases where minute defects remain particularly in the vicinity of the front surface and the back surface. The inventor of the case investigated the cause and found out the following facts.
圖1係先前之光罩基底用玻璃基板之缺陷檢查步驟之說明圖,圖2係圖1中之玻璃基板10之立體圖。於圖1及圖2中,符號10係作為檢查對象之玻璃基板,該玻璃基板10包含兩個主表面11、12、以及四個端面13、14、15、16。於兩個主表面11、12與四個端面13、14、15、16相交之角部,形成有倒角面13a、13b、14a、14b、15a、15b、16a、16b。1 is an explanatory view of a defect inspection step of a conventional glass substrate for a reticle base, and FIG. 2 is a perspective view of the glass substrate 10 of FIG. 1. In FIGS. 1 and 2, reference numeral 10 denotes a glass substrate to be inspected, and the glass substrate 10 includes two main surfaces 11, 12, and four end faces 13, 14, 15, 16. Chamfered faces 13a, 13b, 14a, 14b, 15a, 15b, 16a, 16b are formed at corners where the two main surfaces 11, 12 intersect the four end faces 13, 14, 15, 16.
檢查光L自圖中左方起相對於端面13垂直照射而導入至玻璃基板10之內部。檢查光L係具有較玻璃基板10之厚度tg稍大之寬度(上下寬度)tL 、且實質上大致平行之光。因此,檢查光L實際上係通過端面13及倒角面13a、13b而導入至玻璃基板10之內部。再者,檢查光L之橫寬(與表面、背面平行之方向之寬度)亦具有與上述上下寬度tL 大致同等程度的寬度。因此,藉由向與表面、背面平行之方向移動玻璃基板,而將檢查光導入至整個玻璃基板來檢查整個玻璃基板。The inspection light L is vertically irradiated from the left side in the drawing with respect to the end surface 13 and introduced into the inside of the glass substrate 10. The inspection light L is light having a width (upper and lower width) t L which is slightly larger than the thickness tg of the glass substrate 10 and substantially substantially parallel. Therefore, the inspection light L is actually introduced into the inside of the glass substrate 10 through the end surface 13 and the chamfered surfaces 13a and 13b. Further, the lateral width of the inspection light L (the width in the direction parallel to the front surface and the back surface) also has a width substantially equal to the above-described vertical width t L . Therefore, the entire glass substrate is inspected by introducing the inspection light to the entire glass substrate by moving the glass substrate in a direction parallel to the front surface and the back surface.
此處,檢查光L係自端面13大致垂直地入射,但通過倒角面13a、13b而導入至內部之光係相對於該等倒角面以45°左右之角度入射,並通過玻璃基板10內之區域S1、S2。因此,可認為,上述光自倒角面13a、13b入射時,會因該等面而引起折射及反射,從而與自端面13垂直地入射並通過其他區域之檢查光之強度相比,自該等面入射並通過區域S1、S2之檢查光的強度會變得相當弱。可認為,其結果將導致照射至位於區域S1、S2內之缺陷Ka、Kb等上之檢查光之強度變得不充分,從而因微小之內部缺陷而產生的螢光亦變得不充分。Here, the inspection light L is incident substantially perpendicularly from the end surface 13, but the light introduced into the interior by the chamfered surfaces 13a and 13b is incident at an angle of about 45° with respect to the chamfered surfaces, and passes through the glass substrate 10 Within the area S1, S2. Therefore, it is considered that when the light is incident from the chamfered surfaces 13a and 13b, the light is refracted and reflected by the same surface, and is compared with the intensity of the inspection light which is incident perpendicularly from the end surface 13 and passes through other regions. The intensity of the inspection light incident on the equal surface and passing through the regions S1, S2 becomes quite weak. As a result, it is considered that the intensity of the inspection light irradiated to the defects Ka, Kb, and the like located in the regions S1 and S2 is insufficient, and the fluorescence generated by the minute internal defects is also insufficient.
本發明係基於上述背景開發而成者,目的在於提供一種光罩基底用玻璃基板之製造方法、光罩基底之製造方法及曝光用光罩之製造方法,其係於製造光罩基底用玻璃基板時,甚至可無遺漏地檢測出連光罩基底用玻璃基板之主表面附近之微小的內部缺陷,藉此可良好地檢測出實質上所有區域之內部缺陷而獲得無缺陷之產品。The present invention has been developed based on the above-described background, and an object of the invention is to provide a method for producing a glass substrate for a mask base, a method for producing a mask substrate, and a method for producing an exposure mask, which are used for manufacturing a glass substrate for a mask base. At this time, even minute internal defects in the vicinity of the main surface of the glass substrate for the reticle base can be detected without fail, whereby the internal defects of substantially all the regions can be favorably detected to obtain a defect-free product.
以下列舉用以解決上述問題之方法。The methods for solving the above problems are listed below.
(1) 一種光罩基底用玻璃基板之製造方法,其特徵在於:包括如下步驟:基板準備步驟,準備具有兩個主表面及四個端面之薄板狀之光罩基底用玻璃基板;以及缺陷檢查步驟,自一端面向上述玻璃基板內導入波長200nm以下之實質上為平行光之檢查光來檢測內部缺陷;且上述缺陷檢查步驟係自一端面使檢查光向一主表面側傾斜而導入至玻璃基板內,進而自與上述一端面相對向之端面使檢查光向與上述一主表面相對向之主表面側傾斜而導入至玻璃基板內,藉此利用上述檢查光來檢查由上述玻璃基板之內部缺陷所產生之螢光的有無,選定未檢測出由內部缺陷所產生之螢光之玻璃基板。(1) A method for producing a glass substrate for a mask base, comprising the steps of: preparing a substrate for preparing a mask base having a thin plate shape having two main surfaces and four end faces; and detecting a defect a step of detecting an internal defect by introducing inspection light of substantially parallel light having a wavelength of 200 nm or less from one end into the glass substrate; and the defect inspection step is performed by tilting the inspection light toward a main surface side from one end surface to be introduced into the glass substrate Further, the inspection light is introduced into the glass substrate by tilting the inspection light toward the main surface side facing the one main surface from the end surface facing the one end surface, thereby inspecting the internal defect of the glass substrate by using the inspection light. The presence or absence of the generated fluorescence, and the selection of the glass substrate which did not detect the fluorescence generated by the internal defect.
(2) 如(1)之光罩基底用玻璃基板之製造方法,其中上述玻璃基板於上述兩個主表面與上述四個端面相交之角部形成有倒角面。(2) The method for producing a glass substrate for a reticle base according to (1), wherein the glass substrate has a chamfered surface formed at a corner portion where the two main surfaces intersect the four end faces.
(3) 如(1)或(2)之光罩基底用玻璃基板之製造方法,其中上述缺陷檢查步驟中,除自上述一端面及與一端面相對向之端面導入檢查光以外,進而使檢查光相對於所有主表面均不傾斜地自任一端面導入至玻璃基板內,來檢查由上述內部缺陷所產生之螢光之有無。(3) The method for producing a glass substrate for a mask base according to (1) or (2), wherein, in the defect inspection step, the inspection light is introduced in addition to the one end surface and the end surface opposite to the one end surface, thereby further inspecting The light is introduced into the glass substrate from either end surface without inclination with respect to all the main surfaces, and the presence or absence of the fluorescence generated by the above internal defects is examined.
(4) 如(1)或(2)之光罩基底用玻璃基板之製造方法,其中導入至上述玻璃基板內之檢查光係具有特定發散角度之發散光。(4) The method for producing a glass substrate for a mask base according to (1) or (2), wherein the inspection light system introduced into the glass substrate has divergent light having a specific divergence angle.
(5) 如(4)之光罩基底用玻璃基板之製造方法,其中上述檢查光係藉由凹透鏡或凹面鏡而變成發散光自端面導入至上述玻璃基板內者。(5) The method for producing a glass substrate for a mask base according to (4), wherein the inspection light is converted into divergent light from the end surface into the glass substrate by a concave lens or a concave mirror.
(6) 如(5)之光罩基底用玻璃基板之製造方法,其中上述凹透鏡係配置於端面之前之柱面透鏡(cylindrical lens)。(6) The method for producing a glass substrate for a mask base according to (5), wherein the concave lens is disposed in a cylindrical lens before the end surface.
(7) 如(5)之光罩基底用玻璃基板之製造方法,其中上述凹面鏡係配置於端面之前之柱面凹面鏡。(7) The method for producing a glass substrate for a mask base according to (5), wherein the concave mirror is disposed on a cylindrical concave mirror before the end surface.
(8) 一種光罩基底之製造方法,其特徵在於包括如下步驟:在藉由如(1)至(7)中任一項之光罩基底用玻璃基板之製造方法而製造之光罩基底用玻璃基板的主表面形成圖案形成用之薄膜。(8) A method of manufacturing a reticle substrate, comprising the step of: manufacturing a reticle substrate manufactured by the method for producing a glazing substrate for a reticle substrate according to any one of (1) to (7) The main surface of the glass substrate forms a film for pattern formation.
(9) 一種曝光用光罩之製造方法,其特徵在於包括如下步驟:在藉由如(8)之光罩基底之製造方法而製造之光罩基底的上述圖案形成用之薄膜上形成曝光用之微細圖案。(9) A method of producing an exposure mask, comprising the steps of: forming an exposure film on the film for pattern formation of a mask substrate manufactured by the method for manufacturing a mask base according to (8) Fine pattern.
(10) 一種光罩基底之製造方法,其特徵在於:包括如下步驟:基板準備步驟,準備包含兩個主表面及四個端面之薄板狀之光罩基底用玻璃基板;薄膜形成步驟,於上述玻璃基板之主表面形成圖案形成用之薄膜;以及缺陷檢查步驟,自一端面向上述玻璃基板內導入波長200nm以下之實質上為平行光之檢查光來檢查內部缺陷;且上述缺陷檢查步驟係使檢查光向一主表面側傾斜而自一端面導入至玻璃基板內,進而使檢查光向與上述一主表面相對向之主表面側傾斜而自與上述一端面相對向之端面導入至玻璃基板內,藉此利用上述檢查光來檢查由上述玻璃基板之內部缺陷所產生之螢光的有無,選定未檢測出由內部缺陷所產生之螢光之光罩基底。(10) A method of manufacturing a reticle substrate, comprising: a substrate preparation step of preparing a thin glass substrate for a reticle base having two main surfaces and four end faces; and a film forming step, a film for forming a pattern on a main surface of the glass substrate; and a defect inspection step of inspecting an internal defect by introducing inspection light of substantially parallel light having a wavelength of 200 nm or less from the one end toward the glass substrate; and the defect inspection step is performed for inspection The light is inclined toward one main surface side and introduced into the glass substrate from one end surface, and further, the inspection light is inclined toward the main surface side facing the one main surface, and is introduced into the glass substrate from the end surface facing the one end surface. Thereby, the presence or absence of the fluorescent light generated by the internal defects of the glass substrate is inspected by the inspection light, and the mask base on which the fluorescent light generated by the internal defects is not detected is selected.
(11) 一種曝光用光罩之製造方法,其特徵在於:包括如下步驟:基板準備步驟,準備包含兩個主表面及四個端面之薄板狀之光罩基底用玻璃基板;薄膜形成步驟,於上述玻璃基板之主表面形成圖案形成用之薄膜;微細圖案形成步驟,於上述薄膜上形成曝光用之微細圖案;以及缺陷檢查步驟,自一端面向上述玻璃基板內導入波長200nm以下之實質上為平行光之檢查光來檢查內部缺陷;且上述缺陷檢查步驟係使檢查光向一主表面側傾斜而自一端面導入至玻璃基板內,進而使檢查光向與上述一主表面相對向之主表面側傾斜而自與上述一端面相對向之端面導入至玻璃基板內,藉此利用上述檢查光來檢查由上述玻璃基板之內部缺陷所產生之螢光的有無,選定未檢測出由內部缺陷所產生之螢光之曝光用光罩。(11) A method of manufacturing an exposure mask, comprising the steps of: preparing a substrate, preparing a thin glass substrate for a mask base comprising two main surfaces and four end faces; and forming a film, a film for forming a pattern on a main surface of the glass substrate; a fine pattern forming step of forming a fine pattern for exposure on the film; and a defect inspection step of introducing a substantially parallel wavelength of 200 nm or less from one end toward the glass substrate The inspection light of the light is used to inspect the internal defect; and the defect inspection step is such that the inspection light is inclined toward a main surface side and introduced into the glass substrate from one end surface, thereby causing the inspection light to face the main surface side opposite to the one main surface. The light is inclined from the end surface facing the one end surface into the glass substrate, whereby the presence or absence of the fluorescent light generated by the internal defect of the glass substrate is inspected by the inspection light, and the occurrence of the internal defect is not detected. Fluorescent exposure mask.
(12) 一種光罩基底用玻璃基板之製造方法,其特徵在於:包括如下步驟:基板準備步驟,準備包含兩個主表面及四個端面之薄板狀之光罩基底用玻璃基板;以及缺陷檢查步驟,自一端面向玻璃基板內導入波長為200nm以下之檢查光來檢查內部缺陷;上述缺陷檢查步驟係使用具有特定發散角度之發散光作為檢查光,使檢查光抵達至上述玻璃基板內之應檢查的整個特定區域,來檢查由內部缺陷所產生之螢光的有無,選定未檢測出由內部缺陷所產生之螢光之玻璃基板。(12) A method for producing a glass substrate for a reticle base, comprising the steps of: preparing a substrate, preparing a glass substrate for a reticle base comprising two main surfaces and four end faces; and detecting a defect a step of inspecting an internal defect by introducing inspection light having a wavelength of 200 nm or less from one end toward the glass substrate; the defect inspection step uses diverging light having a specific divergence angle as inspection light to cause inspection light to reach the glass substrate to be inspected The entire specific area is used to check the presence or absence of fluorescence generated by internal defects, and a glass substrate in which no fluorescence generated by internal defects is detected is selected.
(13) 如(12)之光罩基底用玻璃基板之製造方法,其中上述玻璃基板於上述兩個主表面與上述四個端面相交之角部形成有倒角面。(13) The method for producing a glass substrate for a mask base according to (12), wherein the glass substrate has a chamfered surface formed at a corner portion where the two main surfaces intersect the four end faces.
(14) 如(12)或(13)之光罩基底用玻璃基板之製造方法,其中上述檢查光在自一端面導入至玻璃基板內時,具有抵達至整個特定區域之發散角度。(14) The method for producing a glass substrate for a mask base according to (12) or (13), wherein the inspection light has a divergence angle reaching the entire specific region when being introduced into the glass substrate from one end surface.
(15) 如(12)或(13)之光罩基底用玻璃基板之製造方法,其中上述檢查光在自一端面導入至玻璃基板內時具有如下發散角度:在藉由上述一端面及與其相對向之端面之間所設定的中間面一分為二而成之特定區域中,未抵達靠近上述一端面之側之區域整個區域,而抵達遠離上述一端面之側之區域整個區域。(15) The method for producing a glass substrate for a mask base according to (12) or (13), wherein the inspection light has a divergence angle when introduced into the glass substrate from one end surface: by the one end surface and the opposite end surface thereof In a specific region in which the intermediate surface set between the end faces is divided into two, the entire region of the region close to the side of the one end face is not reached, and the entire region of the region away from the side of the one end face is reached.
(16) 如(12)至(15)中任一項之光罩基底用玻璃基板之製造方法,其中將上述檢查光自一端面導入至上述玻璃基板內而檢查螢光之有無,繼而將上述檢查光自與上述一端面相對向之端面導入至上述玻璃基板內而檢查螢光之有無。(16) The method for producing a glass substrate for a reticle base according to any one of (12) to (15), wherein the inspection light is introduced into the glass substrate from one end surface to check the presence or absence of fluorescence, and then the above The inspection light is introduced into the glass substrate from the end surface facing the one end surface to check the presence or absence of the fluorescence.
(17) 如(12)至(16)中任一項之光罩基底用玻璃基板之製造方法,其中上述檢查光係藉由凹透鏡或凹面鏡將平行光變成發散光而自端面導入至上述玻璃基板內者。(17) The method for producing a glass substrate for a reticle base according to any one of (12), wherein the inspection light is introduced from the end surface to the glass substrate by a concave lens or a concave mirror to convert the parallel light into divergent light. Insider.
(18) 如(17)之光罩基底用玻璃基板之製造方法,其中上述凹透鏡係配置於端面之前之柱面透鏡。(18) The method for producing a glass substrate for a mask base according to (17), wherein the concave lens is disposed in a cylindrical lens before the end surface.
(19) 如(17)之光罩基底用玻璃基板之製造方法,其中上述凹面鏡係配置於端面之前之柱面凹面鏡。(19) The method for producing a glass substrate for a mask base according to (17), wherein the concave mirror is disposed on a cylindrical concave mirror before the end surface.
(20) 一種光罩基底之製造方法,其特徵在於包括如下步驟:在藉由如(12)至(19)中任一項之光罩基底用玻璃基板之製造方法而製造的光罩基底用玻璃基板之主表面形成圖案形成用之薄膜。(20) A method of manufacturing a reticle substrate, comprising the step of: manufacturing a reticle substrate manufactured by the method for producing a glazing substrate for a reticle substrate according to any one of (12) to (19) The main surface of the glass substrate forms a film for pattern formation.
(21) 一種曝光用光罩之製造方法,其特徵在於包括如下步驟:在藉由如(20)之光罩基底之製造方法而製造之光罩基底的上述圖案形成用之薄膜上形成曝光用之微細圖案。(21) A method of producing an exposure mask, comprising the steps of: forming an exposure film on a film for pattern formation of a mask substrate manufactured by the method for manufacturing a mask base according to (20) Fine pattern.
(22) 一種光罩基底之製造方法,其特徵在於:包括如下步驟:基板準備步驟,準備包含兩個主表面及四個端面之薄板狀之光罩基底用玻璃基板;薄膜形成步驟,於上述玻璃基板之主表面形成圖案形成用之薄膜;以及缺陷檢查步驟,自一端面向玻璃基板內導入波長為200nm以下之檢查光來檢查內部缺陷;且上述缺陷檢查步驟係使用具有特定發散角度之發散光作為檢查光,使檢查光抵達至上述玻璃基板內之應檢查之整個特定區域來檢查由內部缺陷所產生之螢光的有無,選定未檢測出由內部缺陷所產生之螢光之光罩基底。(22) A method of manufacturing a reticle substrate, comprising: a substrate preparation step of preparing a thin glass substrate for a reticle base having two main surfaces and four end faces; and a film forming step, a film for forming a pattern on a main surface of the glass substrate; and a defect inspection step of inspecting an internal defect by introducing inspection light having a wavelength of 200 nm or less from one end toward the glass substrate; and the defect inspection step uses divergent light having a specific divergence angle As the inspection light, the inspection light reaches the entire specific region to be inspected in the glass substrate to check the presence or absence of the fluorescent light generated by the internal defect, and the mask base on which the fluorescence generated by the internal defect is not detected is selected.
(23) 一種曝光用光罩之製造方法,其特徵在於:包括如下步驟:基板準備步驟,準備包含兩個主表面及四個端面之薄板狀之光罩基底用玻璃基板;薄膜形成步驟,於上述玻璃基板之主表面形成圖案形成用之薄膜;微細圖案形成步驟,於上述薄膜上形成曝光用之微細圖案;以及缺陷檢查步驟,自一端面向玻璃基板內導入波長為200nm以下之檢查光來檢查內部缺陷;且上述缺陷檢查步驟係使用具有特定發散角度之發散光作為檢查光,使檢查光抵達至上述玻璃基板內之應檢查的整個特定區域來檢查由內部缺陷所產生之螢光的有無,選定未檢測出由內部缺陷所產生之螢光之曝光用光罩。(23) A method of manufacturing an exposure mask, comprising the steps of: preparing a substrate, preparing a thin glass substrate for a mask base comprising two main surfaces and four end faces; and forming a film, a film for forming a pattern on a main surface of the glass substrate; a fine pattern forming step of forming a fine pattern for exposure on the film; and a defect inspection step of introducing inspection light having a wavelength of 200 nm or less from one end toward the glass substrate to inspect Internal defect; and the defect inspection step uses divergent light having a specific divergence angle as inspection light, and the inspection light reaches the entire specific area to be inspected in the glass substrate to check the presence or absence of fluorescence generated by the internal defect. An exposure mask that does not detect fluorescence generated by internal defects is selected.
於上述檢查步驟中,使實質上為平行光之檢查光自玻璃基板之一端面向一主表面側傾斜而導入至玻璃基板內,進而使檢查光自與上述一端面相對向之端面向與上述一主表面相對向之主表面側傾斜而導入玻璃基板內,藉此容易使檢查光確實地抵達至包含玻璃基板表面附近之特定區域,從而容易甚至檢測出光罩基底用玻璃基板之主表面附近之微小的內部缺陷。In the inspection step, the inspection light of substantially parallel light is inclined from one end surface of the glass substrate toward the main surface side and introduced into the glass substrate, and the inspection light is directed from the end surface facing the one end surface to the one end. The main surface is inclined toward the main surface side and introduced into the glass substrate, whereby the inspection light is easily reached to a specific region including the vicinity of the surface of the glass substrate, so that it is easy to even detect the small vicinity of the main surface of the glass substrate for the reticle base. Internal defects.
使用具有抵達至應檢查之整個特定區域之發散角度的發散光作為自一端面導入至玻璃基板內之檢查光,藉此容易使導入至玻璃基板內部之檢查光確實地抵達至玻璃基板主表面附近的特定區域。The divergent light having a divergence angle reaching the entire specific area to be inspected is used as the inspection light introduced into the glass substrate from one end surface, whereby the inspection light introduced into the inside of the glass substrate is easily reached to the vicinity of the main surface of the glass substrate Specific area.
根據檢查對象之玻璃基板之形狀,有時會產生來自一端面側及來自相對向之端面側的兩方的檢查光均未抵達之區域,但藉由進而相對於所有主表面均不傾斜地自任一端面導入檢查光,可使上述檢查光確實地抵達至應檢查之整個特定區域。Depending on the shape of the glass substrate to be inspected, there may be a region where the inspection light from both the one end surface side and the opposite end surface side does not reach, but by any one of the main surfaces without tilting The inspection light is introduced into the end surface, so that the inspection light can be surely reached to the entire specific area to be inspected.
又,將檢查光設為具有特定發散角度之發散光,自一端面側及相對向之端面側的兩方導入檢查光,藉此亦可使上述檢查光確實地抵達至應檢查之整個特定區域。Further, the inspection light is made to have divergent light having a specific divergence angle, and the inspection light is introduced from both the one end surface side and the opposite end surface side, whereby the inspection light can be surely reached to the entire specific area to be inspected. .
圖3係關於本發明之實施形態1之光罩基底用玻璃基板之製造方法中的內部缺陷檢查步驟的說明圖,圖4係圖3之A部放大圖,圖5係表示用以實施本發明之實施形態1之光罩基底用玻璃基板之製造方法中之內部缺陷檢查步驟之裝置構成的圖,圖6係缺陷檢測之說明圖。以下,一面參照該等圖式,一面說明本發明之實施形態1之光罩基底用玻璃基板之製造方法、光罩基底之製造方法、及曝光用光罩之製造方法。再者,實施形態1之內部缺陷檢查步驟中之檢查對象即光罩基底用玻璃基板,係與上述先前之光罩基底用玻璃基板之檢查方法之對象即光罩基底用玻璃基板相同者,因此對相同部分附以相同符號進行說明。3 is an explanatory view of an internal defect inspection step in the method of manufacturing a glass substrate for a reticle base according to Embodiment 1 of the present invention, FIG. 4 is an enlarged view of a portion A of FIG. 3, and FIG. 5 is a view for implementing the present invention. FIG. 6 is an explanatory view showing a configuration of an internal defect inspection step in the method for producing a glass substrate for a reticle base according to the first embodiment, and FIG. 6 is an explanatory view of defect detection. Hereinafter, a method of manufacturing a glass substrate for a mask base according to Embodiment 1 of the present invention, a method for producing a mask base, and a method for producing an exposure mask will be described with reference to the drawings. In addition, the glass substrate for a reticle base which is the object to be inspected in the internal defect inspection step of the first embodiment is the same as the glass substrate for the reticle base which is the object of the inspection method for the glass substrate for the reticle base described above. The same parts are denoted by the same symbols for explanation.
實施形態1之光罩基底用玻璃基板之製造方法包括(1)成為內部缺陷檢查對象之光罩基底用玻璃基板之研削步驟、(2)光罩基底用玻璃基板之缺陷檢查步驟、以及(3)光罩基底用玻璃基板之研磨步驟。又,實施形態1之光罩基底之製造方法係對藉由上述(1)~(3)之步驟所製造之光罩基底用玻璃基板進行(4)光罩基底之製造步驟。進而,實施形態1之曝光用光罩之製造方法係對藉由(4)之步驟所製造之光罩基底進行(5)曝光用光罩之製造步驟。於上述步驟中,實施形態1之最大特徵在於(2)光罩基底用玻璃基板之內部缺陷之檢查步驟中所使用之光罩基底用玻璃基板之內部缺陷之檢查方法,其他步驟係大致使用眾所周知之步驟,因此以下對眾所周知之步驟予以必要最小限度之說明,而主要說明光罩基底用玻璃基板之缺陷檢查方法。再者,(2)光罩基底用玻璃基板之內部缺陷檢查步驟即使對於(3)光罩基底用玻璃基板之研磨步驟後之玻璃基板、(4)光罩基底之製造步驟後之光罩基底、或(5)曝光用光罩之製造步驟後之曝光用光罩而進行,內部缺陷檢查之精度亦無實質上之差異。然而,若該步驟係於先進行(3)之光罩基底用玻璃基板之研磨步驟、(4)光罩基底之製造步驟、及(5)曝光用光罩之製造步驟後實施,則會對亦包括存在內部缺陷之不合格品在內之所有玻璃基板進行研磨及薄膜之成膜,故而產生較大浪費,因此較好的是於(3)之研磨步驟前進行該步驟。再者,當重點放在更確實地發現內部缺陷之情形時,對玻璃基板之研磨步驟已結束之光罩基底用玻璃基板、於該玻璃基板上形成有圖案形成用薄膜之光罩基底、曝光用光罩進行內部缺陷檢查步驟即可。The method for producing a glass substrate for a reticle base according to the first embodiment includes (1) a grinding step of a glass substrate for a reticle substrate to be inspected for internal defects, (2) a defect inspection step for a glass substrate for a reticle base, and (3) a polishing step of a glass substrate for a mask substrate. Further, in the method of manufacturing a mask base according to the first embodiment, the step of manufacturing the mask base is performed on the glass substrate for a mask base manufactured by the above steps (1) to (3). Further, in the method for producing an exposure mask according to the first embodiment, the step of manufacturing the exposure mask (5) is performed on the mask substrate manufactured by the step (4). In the above-described steps, the greatest feature of the first embodiment is the method of inspecting the internal defects of the glass substrate for the mask base used in the inspection step of the internal defects of the glass substrate for the mask base, and other steps are generally known. In the following, the following description of the well-known steps will be given as a minimum, and the defect inspection method of the glass substrate for a reticle base will be mainly described. (2) Internal defect inspection step of the glass substrate for the mask base, even for the (3) glass substrate after the polishing step of the glass substrate for the mask base, and (4) the mask substrate after the manufacturing step of the mask substrate Or (5) the exposure mask after the manufacturing step of the exposure mask is used, and the accuracy of the internal defect inspection is not substantially different. However, if the step is performed after the polishing step of the glass substrate for the mask base (3), the manufacturing step of the mask substrate, and (5) the manufacturing step of the exposure mask, Also, all the glass substrates including the defective products having internal defects are subjected to polishing and film formation, so that a large waste is caused. Therefore, it is preferred to carry out the steps before the grinding step of (3). Further, when focusing on the case where the internal defect is more reliably found, the glass substrate for the reticle substrate on which the polishing step of the glass substrate is completed, the reticle substrate on which the film for pattern formation is formed on the glass substrate, and the exposure Use the reticle for the internal defect inspection step.
自藉由眾所周知之方法(例如參照日本專利特開平8-31723號公報、日本專利特開2003-81654號公報等)而製成之合成石英玻璃錠,切出約152.4mm×約152.4mm×約6.85mm之板狀體,從而獲得合成石英之玻璃基板。該玻璃基板包含相對向之兩個主表面、以及與該兩個主表面正交之四個端面。A synthetic quartz glass ingot prepared by a well-known method (for example, refer to Japanese Patent Laid-Open No. Hei 8-31723, No. 2003-81654, etc.), cut out about 152.4 mm × about 152.4 mm × about A plate-shaped body of 6.85 mm to obtain a glass substrate of synthetic quartz. The glass substrate includes two major surfaces opposite to each other and four end faces orthogonal to the two major surfaces.
對上述玻璃基板之主表面與端面相交之角部實施倒角加工之後,對導入檢查光之端面實施鏡面研磨,以便可將檢查光導入至玻璃基板內部,從而獲得光罩基底用玻璃基板10。該玻璃基板10係與圖1及圖2所示之光罩基底用玻璃基板相同者,其包含兩個主表面11、12、四個端面13、14、15、16、以及八個倒角面13a、13b、14a、14b、15a、15b、16a、16b。此處,導入檢查光之端面(一端面)13及與其對向之端面14之表面粗糙度Ra(Average Roughness)(算術平均粗糙度)設為約0.03μm以下。再者,藉由光罩基底之研磨步驟對四個端面全部實施鏡面研磨,因此亦可於該研削步驟之階段,對其他端面14、15、16實施鏡面研磨。將如此獲得之光罩基底用玻璃基板10提供至下一步驟即內部缺陷之檢查步驟。After chamfering the corner portion where the main surface and the end surface of the glass substrate intersect, the end surface into which the inspection light is introduced is mirror-polished so that the inspection light can be introduced into the inside of the glass substrate to obtain the glass substrate 10 for the mask base. The glass substrate 10 is the same as the glass substrate for a mask base shown in FIGS. 1 and 2, and includes two main surfaces 11, 12, four end faces 13, 14, 15, 16 and eight chamfered faces. 13a, 13b, 14a, 14b, 15a, 15b, 16a, 16b. Here, the surface roughness Ra (Average Roughness) of the end surface (one end surface) 13 into which the inspection light is introduced and the end surface 14 opposed thereto are set to be about 0.03 μm or less. Further, since all of the four end faces are mirror-polished by the polishing step of the mask base, the other end faces 14, 15, 16 can also be mirror-polished at the stage of the grinding step. The reticle substrate thus obtained is supplied to the glass substrate 10 to the next step, that is, the inspection step of the internal defect.
該步驟係藉由以下說明之缺陷檢查方法對以如上所述方式而獲得之光罩基底用玻璃基板10檢查其內部缺陷之有無的步驟。以下,說明該步驟中所使用之光罩基底用玻璃基板之檢查方法。再者,此處,係說明僅使檢查光自端面13側向主表面11側傾斜而入射,使檢查光自端面14側向主表面12側傾斜而入射,檢查光不會抵達至整個特定區域的情形,且為使檢查光遍及整個特定區域,進而使檢查光自端面13側相對於主表面11、12不傾斜地入射。This step is a step of inspecting the presence or absence of internal defects of the reticle base glass substrate 10 obtained as described above by the defect inspection method described below. Hereinafter, a method of inspecting the glass substrate for a reticle base used in this step will be described. In this case, only the inspection light is incident on the main surface 11 side from the end surface 13 side, and the inspection light is incident from the end surface 14 side toward the main surface 12 side, and the inspection light does not reach the entire specific area. In the case where the inspection light is spread over the entire specific region, the inspection light is incident from the end surface 13 side without obliquely with respect to the main surfaces 11, 12.
於圖3中,首先將發散角度2 mrad之實質上為平行光之檢查光L自玻璃基板10之端面13導入至玻璃基板10內,以檢測此時由缺陷所產生之螢光。In Fig. 3, first, the inspection light L of substantially parallel light having a divergence angle of 2 mrad is introduced into the glass substrate 10 from the end surface 13 of the glass substrate 10 to detect the fluorescence generated by the defect at this time.
即,使檢查光L於射入主表面11側之方向上相對於主表面11傾斜僅傾斜角θg而入射。此時,必需以如下方式來設定傾斜角θg:若將導入至玻璃基板10內之檢查光L中、通過端面13與倒角面13a、13b相交之角部而導入至玻璃基板內的光線設為L1、L2,則其中光線L1位於特定區域之主表面11側之邊界面E與特定區域之端面13側的邊界面B之相交線Be上、或者較其更靠端面13側,且光線L2位於通過端面13與倒角面13a相交之角部及端面14與倒角面14a相交之角部的邊界面H和特定區域之端面14側的邊界面D之相交線Dh上、或者較其更靠端面14側。若光線L1、L2不滿足該等條件,則縱然使檢查光自端面13側(所有端面側均相同)相對於主表面11、12不傾斜地入射,亦無法使檢查光遍及所有特定區域,因此無法保證確實的內部缺陷之檢查。再者,檢查光L在自端面13導入至玻璃基板10內時,光線之角度會因空氣與玻璃基板10之折射率差而改變僅特定量。檢查光L之傾斜角θg係入射至玻璃基板10之前之檢查光的傾斜角,其係考慮到導入至玻璃基板10時光線L1、L2之角度會改變之情況而設定者。In other words, the inspection light L is incident on the main surface 11 side in a direction oblique to the main surface 11 by the inclination angle θg. In this case, it is necessary to set the inclination angle θg to be incorporated into the glass substrate by the corner portion where the inspection surface L introduced into the glass substrate 10 intersects the chamfered surfaces 13a and 13b. In the case of L1 and L2, the light ray L1 is located on the intersection line E of the boundary surface E on the main surface 11 side of the specific region and the boundary surface B on the end surface 13 side of the specific region, or is closer to the end surface 13 side, and the light ray L2 It is located at the intersection line H of the corner portion where the end surface 13 intersects the chamfered surface 13a and the corner portion where the end surface 14 intersects the chamfered surface 14a, and the boundary surface D of the end surface 14 side of the specific region, or more On the side of the end face 14. When the light beams L1 and L2 do not satisfy the above conditions, even if the inspection light is incident on the end surface 13 side (all the end surface sides are the same) without obliquely incident on the main surfaces 11 and 12, the inspection light cannot be spread over all the specific regions, and thus the inspection light cannot be performed. Ensure the inspection of the actual internal defects. Further, when the inspection light L is introduced into the glass substrate 10 from the end surface 13, the angle of the light is changed by a specific amount due to the difference in refractive index between the air and the glass substrate 10. The inclination angle θg of the inspection light L is an inclination angle of the inspection light before entering the glass substrate 10, and is set in consideration of the fact that the angles of the light beams L1 and L2 are changed when being introduced to the glass substrate 10.
其次,將檢查光L自玻璃基板10之端面14導入至玻璃基板10內,以檢測此時由缺陷所產生之螢光。Next, the inspection light L is introduced into the glass substrate 10 from the end surface 14 of the glass substrate 10 to detect the fluorescence generated by the defect at this time.
即,使檢查光L於射入主表面12側之方向上相對於主表面12傾斜僅傾斜角θg而入射。此時,必需以如下方式來設定傾斜角θg:若將導入至玻璃基板10內之檢查光L中、通過端面14與倒角面14a、14b相交之角部而導入至玻璃基板內之光線設為L3、L4,則其中光線L4位於特定區域之主表面12側之邊界面F與特定區域之端面14側之邊界面D之相交線Df上、或者較其更靠端面14側,且光線L3位於通過端面13與倒角面13b相交之角部及端面14與倒角面14b相交之角部之邊界面J和特定區域之端面13側的邊界面B之相交線Bj上、或者較其更靠端面13側。若光線L3、L4不滿足該等條件,則縱然使檢查光自端面13側(所有端面側均相同)相對於主表面11、12不傾斜地入射,亦無法使檢查光遍及所有特定區域,因此無法保證確實的內部缺陷之檢查。In other words, the inspection light L is incident on the main surface 12 side in a direction inclined by the inclination angle θg with respect to the main surface 12. In this case, it is necessary to set the inclination angle θg in such a manner that the light introduced into the glass substrate 10 and the corner portion where the end surface 14 intersects the chamfered surfaces 14a and 14b is introduced into the glass substrate. In the case of L3 and L4, the light ray L4 is located on the intersection line Df of the boundary surface F on the main surface 12 side of the specific region and the boundary surface D of the end surface 14 side of the specific region, or on the side closer to the end surface 14, and the light ray L3 It is located at the intersection line J of the corner surface where the end surface 13 intersects the chamfered surface 13b and the boundary surface J of the corner portion where the end surface 14 intersects the chamfered surface 14b, and the boundary surface B of the end surface 13 side of the specific region, or more On the side of the end face 13. When the light beams L3 and L4 do not satisfy the above conditions, even if the inspection light is incident from the end surface 13 side (all the end surface sides are the same) with respect to the main surfaces 11 and 12 without obliquely tilting, the inspection light cannot be spread over all the specific regions, and thus cannot be performed. Ensure the inspection of the actual internal defects.
進而,將檢查光L自玻璃基板10之任一端面(圖3中為端面13)導入至玻璃基板10內,以檢查此時由缺陷所產生之缺陷光。即,使檢查光L相對於主表面11、12不傾斜地入射。此時,若將導入至玻璃基板10內之檢查光L中、通過端面13與倒角面13a、13b相交之角部而導入至玻璃基板10內的光線設為L5、L6,則光線L5通過邊界面H上,光線L6通過邊界面J上,從而該檢查光L抵達至玻璃基板10內之邊界面H與邊界面J之間所夾之整個區域。藉由採用此種方法,可使檢查光遍及玻璃基板10內之被邊界面B、D、E、F所包圍之整個特定區域。Further, the inspection light L is introduced into the glass substrate 10 from either end surface (the end surface 13 in FIG. 3) of the glass substrate 10 to inspect the defective light generated by the defect at this time. That is, the inspection light L is incident on the main surfaces 11 and 12 without being inclined. At this time, when the light beams introduced into the glass substrate 10 at the corners where the end faces 13 and the chamfered surfaces 13a and 13b intersect each other in the inspection light L introduced into the glass substrate 10 are L5 and L6, the light ray L5 passes. On the boundary surface H, the light ray L6 passes through the boundary surface J, so that the inspection light L reaches the entire area sandwiched between the boundary surface H and the boundary surface J in the glass substrate 10. By adopting such a method, the inspection light can be spread over the entire specific region surrounded by the boundary faces B, D, E, and F in the glass substrate 10.
此處,特定區域之光罩基底用玻璃基板上厚度方向(主表面11與主表面12之間之方向)之範圍,並非必需使檢查光抵達至厚度方向之整個區域。其原因在於,當研削步驟結束後進行缺陷檢查步驟時,在其後之研磨步驟中,會藉由研磨主表面11、12而自兩側起於厚度方向上削掉特定量之玻璃(圖4之11a部分),因此即使被削掉之區域內存在內部缺陷,在完成後之光罩基底用玻璃基板中,該內部缺陷亦已被去除。然而,考慮到形成圖案形成用薄膜之側之主表面及其相反側之主表面上被研磨之量稍有不同、兩主表面並非完全之平板形狀等,較佳的是在厚度方向之檢查光所抵達之區域稍有裕度(主表面11側之研磨步驟後所露出之面、稍有裕度之虛擬主表面為邊界面E,主表面12側之研磨步驟後所露出之面、稍有裕度之虛擬主表面為邊界面F)。例如,於主表面(包含倒角部分之大小)之大小約為152mm×152mm之光罩基底用玻璃基板的情形時,板厚(厚度方向之厚度)以研削步驟結束後之板厚為6.85mm至6.35mm為目標進行研磨。若考慮到上述裕度,則檢查光抵達至以厚度方向之基板中心為基準最低限度6.4mm之厚度之區域即可。即,關於研削步驟結束後之玻璃基板中、以厚度方向之基板中心為基準較6.4mm更靠外側之部分,將於之後的研磨步驟中被去除,因此即使將上述部分排除在應檢查之特定區域以外亦無問題。Here, the range of the thickness direction of the reticle base of the specific region (the direction between the main surface 11 and the main surface 12) is not necessarily required to cause the inspection light to reach the entire region in the thickness direction. The reason is that when the defect inspection step is performed after the grinding step is finished, in the subsequent grinding step, a certain amount of glass is cut in the thickness direction from both sides by grinding the main surfaces 11 and 12 (Fig. 4 Part 11a), so even if there is an internal defect in the area to be cut, the internal defect has been removed in the glass substrate for the reticle base after completion. However, in consideration of the fact that the main surface on the side where the film for pattern formation is formed and the main surface on the opposite side thereof are slightly different in amount, the two main surfaces are not completely flat, etc., it is preferable to inspect the light in the thickness direction. The area to be reached has a slight margin (the surface exposed after the grinding step on the main surface 11 side, the virtual main surface with a slight margin is the boundary surface E, the surface exposed after the grinding step on the main surface 12 side, slightly The virtual main surface of the margin is the boundary surface F). For example, in the case of a glass substrate for a reticle base having a size of about 152 mm × 152 mm on the main surface (including the size of the chamfered portion), the thickness (thickness in the thickness direction) is 6.85 mm after the end of the grinding step. Grinding is carried out to a target of 6.35 mm. In consideration of the above-described margin, it is sufficient that the inspection light reaches a region having a thickness of at least 6.4 mm based on the center of the substrate in the thickness direction. In other words, in the glass substrate after the completion of the grinding step, the portion outside the center of the substrate in the thickness direction is more than 6.4 mm, and is removed in the subsequent polishing step. Therefore, even if the portion is excluded from the inspection. There is no problem outside the area.
另一方面,特定區域之主表面側之範圍係,當使用光罩基底用玻璃基板製造光罩基底,並基於該光罩基底而製作曝光用光罩時,對於薄膜上形成轉印圖案之區域,只要最低限度地覆蓋即可。其原因在於,當基於該光罩基底用玻璃基板製作曝光用光罩,並將其設置於曝光裝置之光罩平台上,將圖案轉印至轉印對象物(晶圓等)時,形成轉印圖案之區域之外側的主表面11、12之區域的曝光之光會被薄膜遮蔽,因此即使該區域內存在內部缺陷,亦不會對轉印對象物帶來不良影響。On the other hand, the range of the main surface side of the specific region is a region where the transfer pattern is formed on the film when the photomask substrate is fabricated using the glass substrate for the reticle base and the exposure reticle is formed based on the reticle substrate. As long as the minimum coverage is enough. This is because the exposure mask is formed on the glass substrate for the reticle base, and is placed on the reticle stage of the exposure apparatus, and the pattern is transferred to the transfer target (wafer or the like) to form a turn. The exposed light of the areas on the outer surfaces 11 and 12 on the outer side of the printed pattern area is shielded by the film, so that even if there is an internal defect in the area, the transfer target is not adversely affected.
例如,於上述主表面大小約為152mm×152mm之光罩基底用玻璃基板之情形時,形成轉印圖案之區域通常設為以光罩基底的中心為基準132mm×132mm之內側之區域。於此情形時,只要最低限度地分別於與端面13平行、且自光罩基底之中心起朝向端面13相距66mm之距離處設定特定區域之邊界面B,於與端面14平行、且自光罩基底之中心朝向端面14相距66mm之距離處設定特定區域之邊界面D即可。再者,曝光用光罩在曝光裝置之光罩平台上,以未形成薄膜之側之主表面朝向曝光之光之光源側的形式而設置。因此,即使於特定區域之外側之區域曝光之光亦可照射至玻璃基板10之內部,因此若存在內部缺陷,則會自該處產生螢光。當內部缺陷位於特定區域之邊界面B、D附近之情形時,自該處所發出之螢光可能會對朝向轉印對象物之圖案轉印造成不良影響。當考慮到此種情況時,較好的是將特定區域具有裕度地設定為以光罩基底之中心為基準142mm×142mm之內側的區域。若更進一步使其具有裕度,則將特定區域設定為例如146mm×146mm之內側之區域更佳。For example, in the case where the main surface has a glass substrate for a mask base having a size of about 152 mm × 152 mm, the region where the transfer pattern is formed is usually an area of 132 mm × 132 mm on the basis of the center of the mask base. In this case, the boundary surface B of the specific region is set at least at a distance from the center of the reticle base toward the end surface 13 at a distance of 66 mm from the center of the reticle base, in parallel with the end surface 14 and from the reticle. The boundary surface D of the specific region may be set at a distance of 66 mm from the center of the base toward the end surface 14. Further, the exposure mask is provided on the mask stage of the exposure apparatus in such a manner that the main surface on the side where the film is not formed faces the light source side of the exposed light. Therefore, even if light exposed in an area outside the specific area can be irradiated to the inside of the glass substrate 10, if there is an internal defect, fluorescence is generated therefrom. When the internal defect is located in the vicinity of the boundary faces B and D of the specific region, the fluorescent light emitted from the place may adversely affect the pattern transfer toward the transfer object. In consideration of such a case, it is preferable to set the specific region with a margin to a region inside the 142 mm × 142 mm with respect to the center of the mask base. If it is further made to have a margin, it is more preferable to set the specific area to an area inside, for example, 146 mm × 146 mm.
若考慮以上之情況,則當製造約152mm×152mm×6.35mm之光罩基底用玻璃基板時,於內部缺陷檢查步驟中應檢查之特定區域最低限度設為以基板中心為基準132mm×132mm×6.4mm之玻璃基板內部即可。又,當要求更確實之內部缺陷檢查時,較好的是將特定區域設為以基板中心為基準142mm×142mm×6.45mm之玻璃基板內部。藉此,可使檢查光L遍及玻璃基板10內之形成轉印圖案之區域,藉由檢測此時所產生之缺陷光,可比較簡單地進行無遺漏之缺陷檢測。In consideration of the above, when a glass substrate for a reticle base of about 152 mm × 152 mm × 6.35 mm is manufactured, the specific area to be inspected in the internal defect inspection step is at least 132 mm × 132 mm × 6.4 based on the center of the substrate. The inside of the glass substrate of mm can be used. Further, when a more accurate internal defect inspection is required, it is preferable to set the specific region to the inside of the glass substrate with the substrate center as a reference of 142 mm × 142 mm × 6.45 mm. Thereby, the inspection light L can be spread over the area where the transfer pattern is formed in the glass substrate 10, and by detecting the defective light generated at this time, the defect detection can be performed relatively easily.
於上述實施形態中,上述傾斜角θc具體而言係如下所示。In the above embodiment, the inclination angle θc is specifically as follows.
‧檢查光:ArF準分子雷射光(曝光波長:193nm)‧Check light: ArF excimer laser light (exposure wavelength: 193 nm)
‧玻璃基板10之材質:合成石英玻璃‧Material of glass substrate 10: Synthetic quartz glass
‧折射率:1.52(曝光波長:在193nm)‧Refractive index: 1.52 (exposure wavelength: at 193 nm)
‧玻璃基板10之尺寸‧ size of glass substrate 10
縱‧橫:約152×152mm、Vertical and horizontal: about 152 × 152mm,
厚度tg:6.4mm(研磨步驟後之目標厚度為6.35mm+誤差範圍)Thickness tg: 6.4 mm (target thickness after grinding step is 6.35 mm + error range)
倒角量m(參照圖4):0.6mmThe amount of chamfer m (refer to Figure 4): 0.6mm
‧特定區域:132mm×132mm×6.4mm(以基板中心為基準)‧Specific area: 132mm × 132mm × 6.4mm (based on the center of the substrate)
‧檢查光之傾斜角度θg:2.4°‧Check the tilt angle of light θg: 2.4°
當如上所述光罩基底用玻璃基板之製作完成時(研磨步驟結束後)之縱橫尺寸約為152mm×152mm×6.35mm,倒角量m為0.6mm時,若將使檢查光最低限度應抵達之特定區域設為132mm×132mm×6.4mm,則傾斜角度θg為2.4°即可。又,若基板尺寸相同,且將使檢查光應抵達之特定區域設為142mm×142mm×6.45mm,則傾斜角度θg為4.8°即可。When the fabrication of the glass substrate for the mask base is completed as described above (after the completion of the polishing step), the aspect ratio is about 152 mm × 152 mm × 6.35 mm, and when the amount of chamfering m is 0.6 mm, the inspection light should be minimized. When the specific region is 132 mm × 132 mm × 6.4 mm, the inclination angle θg may be 2.4°. Further, when the substrate size is the same and the specific region where the inspection light is to be reached is 142 mm × 142 mm × 6.45 mm, the inclination angle θg may be 4.8°.
其次,一面參照圖5,一面說明用以實施上述實施形態1之缺陷檢查步驟之裝置構成,並且更詳細地說明本發明之實施形態1之光罩基底用玻璃基板之製造方法中的缺陷檢查步驟。Next, a device configuration for carrying out the defect inspection step of the first embodiment will be described with reference to Fig. 5, and a defect inspection step in the method for manufacturing a glass substrate for a mask base according to the first embodiment of the present invention will be described in more detail. .
於圖5中,符號20係玻璃基板之缺陷檢查裝置。該玻璃基板之缺陷檢查裝置20包括:雷射裝置21,其用以產生檢查光L並照射至玻璃基板;XYZ平台22,其載置玻璃基板10並使其向X方向、Y方向、Z方向分別移動,並且發送其位置資訊;CCD(Charge Coupled Device,電荷耦合元件)相機23,其檢測玻璃基板10中所產生之缺陷光;以及電腦27,其輸入來自CCD相機23之圖像資訊、來自XYZ平台22之位置資訊等,並進行特定之處理。In Fig. 5, reference numeral 20 is a defect inspection device for a glass substrate. The glass substrate defect inspection device 20 includes a laser device 21 for generating inspection light L and irradiated to a glass substrate, and an XYZ stage 22 on which the glass substrate 10 is placed and oriented in the X direction, the Y direction, and the Z direction. Moving separately and transmitting its position information; a CCD (Charge Coupled Device) camera 23 detecting defective light generated in the glass substrate 10; and a computer 27 inputting image information from the CCD camera 23 from The location information of the XYZ platform 22, etc., and the specific processing.
雷射裝置21係設置於XYZ平台22上所載置之玻璃基板10之端面13之側。再者,如虛線所示,亦可於與端面13相對向之端面14之側設置一台。自雷射裝置21所射出之檢查光L通過端面13及端面14而被導入至玻璃基板10內。自雷射裝置21所射出之檢查光係光束形狀為7.0mm×4.0mm、功率為6mJ、頻率為400Hz之脈衝狀之ArF準分子雷射光(波長:193nm)。The laser device 21 is disposed on the side of the end surface 13 of the glass substrate 10 placed on the XYZ stage 22. Further, as shown by a broken line, one of them may be provided on the side opposite to the end surface 14 facing the end surface 13. The inspection light L emitted from the laser device 21 is introduced into the glass substrate 10 through the end surface 13 and the end surface 14. The inspection light beam shape emitted from the laser device 21 is a pulse-shaped ArF excimer laser light (wavelength: 193 nm) having a shape of 7.0 mm × 4.0 mm, a power of 6 mJ, and a frequency of 400 Hz.
XYZ平台22係可載置玻璃基板10並使其於XYZ方向上移動,進而亦可使玻璃基板10傾斜,而使玻璃基板10移動及傾斜至所期望之位置上,並向電腦27發送其位置資訊者。即,為使檢查光L相對於玻璃基板10之主表面11、12以傾斜角度θg°傾斜,可藉由使玻璃基板10側傾斜來實現。再者,亦可將雷射裝置21設為可使檢查光L相對於玻璃基板10之主表面11、12而傾斜之構成。The XYZ stage 22 can mount the glass substrate 10 and move it in the XYZ direction, and can also tilt the glass substrate 10 to move and tilt the glass substrate 10 to a desired position, and send the position to the computer 27. Information person. In other words, in order to incline the inspection light L with respect to the main surfaces 11 and 12 of the glass substrate 10 at an inclination angle θg°, it can be realized by inclining the glass substrate 10 side. Further, the laser device 21 may be configured such that the inspection light L can be inclined with respect to the main surfaces 11 and 12 of the glass substrate 10.
當進行本缺陷檢查之情形時,將玻璃基板10設置於檢查開始之位置,並且使玻璃基板10傾斜滿足上述條件之傾斜角度θg,以使檢查光L射入主表面11側,其次,藉由雷射裝置21,向玻璃基板10內導入檢查光L,並藉由CCD相機23來拍攝此時之螢光Lkc、Lkd之像,將該圖像資訊及上述位置資訊發送至電腦27並加以儲存。其次,驅動XYZ平台22而使玻璃基板10向Y方向移動相當於檢查光L之寬度大小的距離,並同樣地照射檢查光L,藉由CCD相機23拍攝此時之螢光Lkc、Lkd之像,並且將上述圖像資訊與位置資訊一併發送至電腦27。藉由重複該動作,而自端面13之一端至另一端為止之所有區域導入檢查光L。When the defect inspection is performed, the glass substrate 10 is placed at the position where the inspection is started, and the glass substrate 10 is inclined so as to satisfy the above-described condition of the inclination angle θg so that the inspection light L is incident on the main surface 11 side, and secondly, by The laser device 21 introduces the inspection light L into the glass substrate 10, and images the fluorescent light Lkc and Lkd at this time by the CCD camera 23, and transmits the image information and the position information to the computer 27 for storage. . Next, the XYZ stage 22 is driven to move the glass substrate 10 in the Y direction by a distance corresponding to the width of the inspection light L, and the inspection light L is irradiated in the same manner, and the image of the fluorescent light Lkc and Lkd at this time is captured by the CCD camera 23. And sending the above image information together with the location information to the computer 27. By repeating this operation, the inspection light L is introduced from all the ends of the end face 13 to the other end.
其次,於XYZ平台22上使玻璃基板10以端面14朝向雷射裝置21側之方式移動,並且傾斜滿足上述條件之傾斜角度θg,以使檢查光L射入主表面12側。繼而,重複與自端面13導入之情形相同之操作,自端面14之一端至另一端為止之所有區域導入檢查光L。最後,於XYZ平台22上使玻璃基板10以端面13朝向雷射裝置21側之方式移動,使得檢查光相對於主表面11、12大致平行且不傾斜,並重複同樣之操作,而自端面13之一端至另一端為止之所有區域導入檢查光L。Next, the glass substrate 10 is moved on the XYZ stage 22 so that the end surface 14 faces the laser device 21 side, and the inclination angle θg satisfying the above condition is inclined so that the inspection light L is incident on the main surface 12 side. Then, the same operation as in the case of introduction from the end face 13 is repeated, and the inspection light L is introduced from all the ends of the end face 14 to the other end. Finally, the glass substrate 10 is moved on the XYZ stage 22 in such a manner that the end face 13 faces the side of the laser device 21, so that the inspection light is substantially parallel and not inclined with respect to the main surfaces 11, 12, and the same operation is repeated, and from the end face 13 The inspection light L is introduced in all areas from one end to the other end.
藉由該等一系列步驟,向玻璃基板10內之所有區域照射檢查光L,並儲存玻璃基板10內之所有區域之螢光之圖像。再者,關於自端面13側導入向主表面11側傾斜之檢查光並且螢光之圖像儲存步驟結束後自端面14側導入檢查光之事前設置,若設為XYZ平台22完全不移動,而藉由機械手等來使玻璃基板10反轉(以主表面12為表面、且端面14朝向雷射裝置21側之方式使玻璃基板10自身旋轉),則可省去調整位置及調整傾斜角度之工夫,從而較佳。By the series of steps, the inspection light L is irradiated to all areas in the glass substrate 10, and the image of the fluorescence in all areas in the glass substrate 10 is stored. In addition, the inspection light that is inclined toward the main surface 11 side is introduced from the end surface 13 side, and the inspection light is introduced from the end surface 14 side after the image storage step of the fluorescent light is completed, and if the XYZ stage 22 is not moved at all, By rotating the glass substrate 10 by a robot or the like (the glass substrate 10 itself is rotated such that the main surface 12 is the surface and the end surface 14 faces the laser device 21 side), the adjustment position and the tilt angle can be omitted. Work, so better.
CCD相機23係配置於表面與背面中之一面即主表面11之側(圖之上方,但當使上述玻璃基板10反轉之情形時,則變為主表面12之側),用以製作根據自玻璃基板10所發出之光之資訊而形成的圖像。即,偵測由玻璃基板10之內部缺陷所產生之螢光Lkc、Lkd,拍攝該螢光之圖像,並將該圖像資訊發送至電腦27。再者,於本實施形態1中,係使用所謂黑白相機作為CCD相機23。The CCD camera 23 is disposed on the side of the main surface 11 which is one of the front surface and the back surface (above the figure, but when the glass substrate 10 is reversed, becomes the side of the main surface 12) for making An image formed from information of light emitted from the glass substrate 10. That is, the fluorescent light Lkc, Lkd generated by the internal defects of the glass substrate 10 is detected, an image of the fluorescent light is captured, and the image information is transmitted to the computer 27. Further, in the first embodiment, a so-called black and white camera is used as the CCD camera 23.
電腦27輸入來自CCD相機23之圖像,並對玻璃基板10之Y方向之各位置分別進行圖像處理,就該玻璃基板10之Y方向之各位置,根據其與玻璃基板10之X方向位置的關係,分析CCD相機23所接收之光Lkc、Lkd、Lg之光量(強度)。即,當光Lkc、Lkd、Lg之光量具有特定臨限值以上之局部的光量時,電腦27判斷為內部缺陷Kc、Kd已發出該特定臨限值以上之局部的光量之光Lkc、Lkd,從而根據內部缺陷Kc、Kd所發出之局部的光量之光Lkc、Lkd的形狀等,對內部缺陷Kc、Kd之種類(局部脈紋、內容物、異質物)與該內部缺陷Kc、Kd之位置(玻璃基板10中之X方向及Y方向之位置)一併進行特定並且檢測。The computer 27 inputs an image from the CCD camera 23, and performs image processing on each position of the glass substrate 10 in the Y direction. The position of the glass substrate 10 in the Y direction is based on the position of the glass substrate 10 in the X direction. The relationship between the light beams Lkc, Lkd, and Lg received by the CCD camera 23 is analyzed. That is, when the light amount of the light Lkc, Lkd, Lg has a partial light amount equal to or greater than a certain threshold value, the computer 27 determines that the internal defects Kc, Kd have emitted the partial light amount Lkc, Lkd above the specific threshold value, Therefore, the types of internal defects Kc and Kd (local veins, contents, foreign matter) and the positions of the internal defects Kc, Kd are determined based on the shape of the partial light amount Lkc, Lkd emitted by the internal defects Kc, Kd, and the like. (The positions in the X direction and the Y direction in the glass substrate 10) are collectively specified and detected.
例如,當玻璃基板10中存在局部脈紋或內容物作為內部缺陷Kc時,藉由使來自雷射照射裝置21之ArF準分子雷射光導入至玻璃基板10,而使得上述局部脈紋或內容物如圖6(A)所示發出特定臨限值(1000counts)以上之局部的光量之光Lkc,且合成石英玻璃基板4之局部脈紋或內容物以外之區域發出光Lg。電腦27藉由對CCD相機23所接收之光Lkc及Lg進行圖像處理並加以分析,而根據特定臨限值以上之局部的光量之光Lkc之形狀,將內部缺陷Kc判斷為局部脈紋或異質物,且認為局部脈紋或內容物存在於上述特定臨限值以上之局部的光量之光Lkc所產生之位置,從而將上述局部脈紋或內容物與其位置一併檢測出來。此處,於圖6(A)之情形時,橫軸表示玻璃基板10之X方向位置,縱軸表示光Lkc及Lg之光量(強度)。For example, when local veins or contents are present as the internal defects Kc in the glass substrate 10, the local veins or contents are caused by introducing ArF excimer laser light from the laser irradiation device 21 to the glass substrate 10. As shown in FIG. 6(A), a partial light amount Lkc of a specific threshold value (1000 counts) or more is emitted, and a region other than the local vein or the content of the synthetic quartz glass substrate 4 emits light Lg. The computer 27 performs image processing on the light Lkc and Lg received by the CCD camera 23 and analyzes it, and determines the internal defect Kc as a local vein or according to the shape of the partial light amount Lkc above the specific threshold value. The foreign matter is considered to be a position where the local vein or the content exists at a portion of the light amount Lkc above the specific threshold value, so that the local vein or the content is detected together with the position. Here, in the case of FIG. 6(A), the horizontal axis represents the position of the glass substrate 10 in the X direction, and the vertical axis represents the amount of light (intensity) of the lights Lkc and Lg.
又,當玻璃基板10中存在異質物作為內部缺陷Kd時,藉由自雷射照射裝置21將ArF準分子雷射光導入至玻璃基板10,而使得上述異質物如圖6(B)所示,於特定之範圍(例如20~50mm)內發出特定臨限值(1000counts)以上之局部的光量之光Lkd,且合成石英玻璃基板4之異質物以外之區域發出光Lg。電腦27藉由對CCD相機23所接收之光Lkd及Lg進行圖像處理並加以分析,而根據特定臨限值以上之局部的光量之光Lkd之形狀,將內部缺陷Kd判斷為異質物,且認為該異質物存在於上述特定臨限值以上之局部的光量之光Lkd所產生之位置,從而將該異質物與其位置一併檢測出來。此處,於圖6(B)之情形時,橫軸表示玻璃基板10之X方向位置,縱軸表示所檢測出之光量(強度)。Further, when a foreign substance exists as the internal defect Kd in the glass substrate 10, ArF excimer laser light is introduced from the laser irradiation device 21 to the glass substrate 10, so that the above-described foreign matter is as shown in FIG. 6(B). The partial light amount Lkd of a specific threshold (1000 counts) or more is emitted within a specific range (for example, 20 to 50 mm), and the light Lg is emitted from a region other than the foreign matter of the synthetic quartz glass substrate 4. The computer 27 performs image processing on the light Lkd and Lg received by the CCD camera 23 and analyzes it, and determines the internal defect Kd as a foreign substance based on the shape of the partial light amount Lkd above the specific threshold value, and It is considered that the heterogeneous substance exists at a position generated by the light Lkd of the local light amount above the specific threshold value, and the heterogeneous substance is detected together with the position thereof. Here, in the case of FIG. 6(B), the horizontal axis represents the position of the glass substrate 10 in the X direction, and the vertical axis represents the amount of light (intensity) detected.
對於藉由上述玻璃基板之缺陷檢查裝置20並未檢測出內部缺陷Kc、Kd之玻璃基板10,鏡面研磨或精密研磨其主表面11、12以使其變為所期望之表面粗糙度,並實施清洗處理,從而獲得光罩基底用玻璃基板10。此時之主表面11、12之表面粗糙度較好的是,均方根粗糙度(Rms(root-mean-square,均方根))為0.2nm以下。The glass substrate 10 in which the internal defects Kc and Kd are not detected by the defect inspection device 20 of the glass substrate is mirror-polished or precision-polished to have a desired surface roughness, and is implemented. The cleaning process is performed to obtain a glass substrate 10 for a reticle base. At this time, the surface roughness of the main surfaces 11 and 12 is preferably such that the root mean square roughness (Rms (root-mean-square)) is 0.2 nm or less.
其次,使用眾所周知之濺鍍裝置、例如DC(direct current,直流)磁控濺鍍裝置等,於如上所述而獲得之光罩基底用玻璃基板10之主表面11上形成光罩圖案形成用之薄膜(半色調膜),從而獲得作為光罩基底之半色調型移相光罩基底。Next, a mask pattern is formed on the main surface 11 of the glass substrate 10 for a mask base obtained as described above by using a well-known sputtering apparatus, for example, a DC (direct current) magnetron sputtering apparatus. A film (halftone film) to obtain a halftone phase shift mask substrate as a mask base.
再者,作為該半色調膜所使用之材料,可列舉以使含有鉬、鉭、鎢、鋯等過渡金屬及矽之過渡金屬矽化物氧化、氮化、氧氮化而成者作為主成分之材料。又,亦可將半色調膜設為主要調整針對曝光之光的穿透率之穿透率調整層、及主要針對透過膜中之曝光之光調整相位差之相位調整層之兩層以上的積層構造。In addition, as a material used for the halftone film, a transition metal halide such as molybdenum, niobium, tungsten or zirconium and a transition metal halide of ruthenium are oxidized, nitrided, and oxynitrided as a main component. material. Further, the halftone film may be a layer of a transmittance adjusting layer that mainly adjusts the transmittance of the light to be exposed, and a layer of two or more layers of the phase adjustment layer that mainly adjusts the phase difference with respect to the light in the permeable film. structure.
其次,藉由眾所周知之圖案形成方法,於上述光罩基底(半色調型移相光罩基底)之半色調膜上形成圖案,從而獲得作為曝光用光罩之半色調移相光罩。即,於上述半色調膜之表面塗佈光阻之後進行加熱處理而形成光阻膜,並於該光阻膜上對特定之圖案進行刻寫與顯影處理,而形成光阻圖案,並且將上述光阻圖案作為光罩,對半色調膜進行乾式蝕刻而形成半色調膜圖案,繼而去除光阻圖案而獲得於玻璃基板10上形成有半色調膜圖案之曝光用光罩。Next, a pattern is formed on the halftone film of the above-described mask substrate (halftone type phase shift mask substrate) by a well-known pattern forming method, thereby obtaining a halftone phase shift mask as an exposure mask. That is, a photoresist is applied to the surface of the halftone film, followed by heat treatment to form a photoresist film, and a specific pattern is written and developed on the photoresist film to form a photoresist pattern, and the light is formed. The resist pattern is used as a mask, and the halftone film is dry-etched to form a halftone film pattern, and then the photoresist pattern is removed to obtain an exposure mask on which the halftone film pattern is formed on the glass substrate 10.
根據上述實施形態1,於缺陷檢查步驟中,使檢查光L在自端面13射向主表面11側之方向上,相對於主表面11傾斜僅傾斜角θg而導入,並檢查螢光之有無,其次使檢查光L在自端面14射向主表面12側之方向上,相對於主表面12傾斜僅傾斜角θg而導入來檢查螢光之有無,進而使檢查光L自任一端面相對於主表面11、12不傾斜地導入來檢查螢光之有無,藉此即使於存在倒角面之情形時,亦可使檢查光確實地抵達至玻璃基板內部之表面附近為止,可進行確實之缺陷檢測,從而可進行有效之檢查。According to the first embodiment, in the defect inspection step, the inspection light L is introduced in the direction from the end surface 13 toward the main surface 11 side, and is inclined with respect to the main surface 11 by only the inclination angle θg, and the presence or absence of the fluorescence is checked. Then, the inspection light L is introduced in the direction from the end surface 14 toward the main surface 12, and is inclined with respect to the main surface 12 by the inclination angle θg to check the presence or absence of the fluorescence, and further the inspection light L from the end surface with respect to the main surface 11 And 12 are introduced without being inclined to check the presence or absence of the fluorescent light, so that even when the chamfered surface is present, the inspection light can be surely reached to the vicinity of the surface inside the glass substrate, and the defect detection can be performed. Conduct an effective inspection.
再者,於本實施形態1之檢查對象之玻璃基板10之大小的情形時,必需將檢查光導入三次,但根據玻璃基板之大小,僅使檢查光L自端面13向主表面11側傾斜而導入,且使檢查光L自端面14向主表面12側傾斜而導入,來使檢查光遍及整個特定區域之情形時,未必需要相對於主表面11、12不傾斜之第三次檢查光L之導入。作為導入兩次檢查光亦可之情形時之條件,係滿足如下兩個條件:自端面13向主表面11側傾斜而導入檢查光時,光線L2通過端面14與倒角面14a相交之角部上、或者較其更靠端面14側;以及自端面14向主表面12側傾斜而導入檢查光時,光線L3通過端面13與倒角面13b相交之角部上、或者較其更靠端面13側。In the case of the size of the glass substrate 10 to be inspected in the first embodiment, it is necessary to introduce the inspection light three times. However, depending on the size of the glass substrate, only the inspection light L is inclined from the end surface 13 toward the main surface 11 side. When the inspection light L is introduced by tilting the inspection light L from the end surface 14 toward the main surface 12 side so that the inspection light is spread over the entire specific region, the third inspection light L which is not inclined with respect to the main surfaces 11 and 12 is not necessarily required. Import. As a condition for introducing the inspection light twice, the following two conditions are satisfied: when the inspection light is introduced from the end surface 13 toward the main surface 11 side, the light ray L2 passes through the corner where the end surface 14 intersects the chamfer surface 14a. When the inspection light is introduced from the end surface 14 toward the main surface 12 side and the inspection light is introduced from the end surface 14 toward the main surface 12 side, the light beam L3 passes through the corner portion where the end surface 13 intersects the chamfer surface 13b, or is closer to the end surface 13 side.
再者,於上述實施形態1中,已揭示於缺陷檢查步驟中,將接收內部缺陷Kc、Kd所發出之光Lkc、Lkd、Lg之CCD相機23配置於主表面11之側的示例,但其亦可配置於導入ArF準分子雷射光之端面13、14以外之端面之側。又,只要研磨至可導入檢查光之程度,則亦可設為自端面15及端面16導入ArF準分子雷射光之配置。Further, in the above-described first embodiment, an example in which the CCD camera 23 that receives the light Lkc, Lkd, and Lg emitted from the internal defects Kc and Kd is disposed on the side of the main surface 11 is disclosed in the defect inspection step. It may be disposed on the side of the end face other than the end faces 13 and 14 of the ArF excimer laser light. Further, as long as it is polished to such an extent that inspection light can be introduced, ArF excimer laser light can be introduced from the end surface 15 and the end surface 16.
又,於上述實施形態1中,已說明曝光光源為ArF準分子雷射之情形,但只要係波長為200nm以下、較好的是波長為100nm~200nm之光,則亦可為F2準分子雷射。又,亦可使用為獲得與ArF準分子雷射或F2準分子雷射相同之波長而自氘(D2)燈等光源使光分光、從而中心波長與ArF準分子雷射、F2準分子雷射相同之光。Further, in the first embodiment, the case where the exposure light source is an ArF excimer laser has been described. However, if the wavelength is 200 nm or less, preferably light having a wavelength of 100 nm to 200 nm, the F2 excimer can also be used. Shoot. Alternatively, it is also possible to use a light source such as a D2 lamp to obtain light at the same wavelength as an ArF excimer laser or an F2 excimer laser, thereby splitting the center wavelength with an ArF excimer laser and an F2 excimer laser. The same light.
又,於上述實施形態1中,亦可使用彩色相機作為CCD相機23,接收玻璃基板10之內部缺陷及該內部缺陷以外之區域所發出之波長較波長200nm以上之曝光波長之光更長之波長的光而進行拍攝,電腦27按紅、綠、藍之顏色分類而對該CCD相機23之圖像進行圖像處理,並根據按該顏色分類進行圖像處理後之光的強度(光量)分布而檢測內部缺陷16。於此情形時,電腦27亦可根據按顏色分類進行圖像處理之光之顏色、波長等之資訊而檢測內部缺陷。又,內部缺陷之檢測亦可於光罩基底用玻璃基板之製造步驟之最終階段實施。Further, in the above-described first embodiment, a color camera can be used as the CCD camera 23, and the internal defect of the glass substrate 10 and the wavelength of the wavelength other than the internal defect can be longer than the wavelength of the exposure wavelength of 200 nm or more. The light is taken, and the computer 27 classifies the image of the CCD camera 23 according to the colors of red, green, and blue, and distributes the intensity (light amount) of the light after image processing according to the color classification. And detect internal defects16. In this case, the computer 27 can also detect internal defects based on information such as the color, wavelength, and the like of the light processed by the color classification. Further, the detection of the internal defects can be performed at the final stage of the manufacturing process of the glass substrate for the reticle base.
另外,於上述實施形態1中,已說明CCD相機23接收由玻璃基板10之內部缺陷及該內部缺陷以外之區域所發出之、較曝光波長之光更長之波長的光之情形,但亦可由分光器接收該等光,並測定內部缺陷之分光特性(波長及強度)、光Lkc、Lkd、Lg之強度(光量)分布,而檢測內部缺陷。Further, in the above-described first embodiment, the CCD camera 23 has been described as receiving light of a wavelength longer than the internal wavelength of the glass substrate 10 and the light of the exposure wavelength, which is longer than the exposure light. The spectroscope receives the light and measures the spectral characteristics (wavelength and intensity) of the internal defects and the intensity (light amount) distribution of the light Lkc, Lkd, and Lg to detect internal defects.
又,於上述實施形態1中,已說明於光罩基底用玻璃基板上形成有半色調膜之半色調型移相光罩基底之情形,但並不限定於此。例如,亦可為於玻璃基板10上包含半色調膜且於該半色調膜上包含遮光膜之半色調型移相光罩基底、或於光罩基底用玻璃基板7上形成有遮光膜之所謂的二元型光罩基底。作為此情形時之遮光膜之構造,可列舉自基板側起積層遮光層、表面抗反射層之兩層積層構造、或進而於基板與遮光層之間加入有背面抗反射層之三層積層構造等。作為遮光膜中所使用之材料,首先可列舉以鉻為主成分之材料,為滿足背面抗反射層、遮光層、表面抗反射層所必需之特性,可分別使用以鉻為主成分並適度地經氧化、氮化、碳化等之材料。又,作為鉻以外之可適用於遮光膜之材料,例如可列舉含有鉬、鎢、鋯等過渡金屬及矽之過渡金屬矽化物,與鉻之情形同樣地,可使用以該過渡金屬矽化物為主成分並適度地經氧化、氮化、碳化等之材料。除此之外,亦可使用以鉭為主成分並適度地經氧化、氮化、碳化等之材料,從而形成兩層積層構造或者三層積層構造之遮光膜。再者,亦可於該等半色調型移相光罩基底、光罩基底之遮光膜上形成光阻膜。Further, in the first embodiment, the case of the halftone type phase shift mask substrate in which the halftone film is formed on the glass substrate for the mask base has been described, but the invention is not limited thereto. For example, a halftone type phase shift mask substrate including a halftone film on the glass substrate 10 and a light shielding film on the halftone film, or a light shielding film formed on the glass substrate 7 for the mask base may be used. A binary reticle substrate. The structure of the light-shielding film in this case includes a two-layer laminated structure in which a light-shielding layer and a surface anti-reflection layer are laminated from the substrate side, or a three-layer laminated structure in which a back surface anti-reflection layer is further interposed between the substrate and the light-shielding layer. Wait. As a material used for the light-shielding film, firstly, a material containing chromium as a main component is used, and in order to satisfy the characteristics necessary for the back surface antireflection layer, the light shielding layer, and the surface antireflection layer, chromium may be used as a main component and moderately A material that is oxidized, nitrided, carbonized, and the like. Further, examples of the material which can be applied to the light-shielding film other than chromium include a transition metal containing a transition metal such as molybdenum, tungsten or zirconium, and a transition metal halide. In the same manner as in the case of chromium, the transition metal halide can be used. The main component is moderately oxidized, nitrided, carbonized, and the like. In addition, it is also possible to form a light-shielding film having a two-layer laminated structure or a three-layer laminated structure by using a material mainly composed of ruthenium, oxidized, nitrided, carbonized or the like as a main component. Furthermore, a photoresist film may be formed on the halftone phase shift mask base and the light shielding film of the mask base.
於實施形態1中,根據檢查對象之玻璃基板10之大小,必需向玻璃基板10內導入三次檢查光,即,使檢查光L自端面13向主表面11側傾斜而導入,使檢查光L自端面14向主表面12側傾斜而導入,且使檢查光L自任一端面相對於主表面11、12不傾斜而導入。與此相對,於實施形態2中,係藉由凹透鏡將檢查光源之大致平行的檢查光變成發散光,而導入至玻璃基板10內,藉此不論檢查對象之玻璃基板10之大小如何,不進行使檢查光L自任一端面相對於主表面11、12不傾斜而導入之動作,而藉由兩次檢查光之導入即可使檢查光遍及整個特定區域。In the first embodiment, it is necessary to introduce the inspection light three times into the glass substrate 10 in accordance with the size of the glass substrate 10 to be inspected, that is, to introduce the inspection light L from the end surface 13 toward the main surface 11 side, and to introduce the inspection light L. The end surface 14 is inclined and introduced toward the main surface 12 side, and the inspection light L is introduced from any one end surface without tilting with respect to the main surfaces 11 and 12. On the other hand, in the second embodiment, the substantially parallel inspection light of the inspection light source is converted into divergent light by the concave lens, and is introduced into the glass substrate 10, thereby preventing the size of the glass substrate 10 to be inspected. The inspection light L is introduced from any one of the end faces without tilting with respect to the main surfaces 11, 12, and the inspection light can be spread over the entire specific region by the introduction of the inspection light twice.
如圖7所示,該實施形態2係於端面13(端面14)之近前設置凹透鏡28,使檢查光L變成發散角度為θc之發散光,且相對於主表面11(主表面12)傾斜僅傾斜角度θg,而導入至玻璃基板10內。此情形時之傾斜角度θg係通過凹透鏡28之中心、且光線角度未變化之光線L9(光線L12)之相對於主表面11(主表面12)的角度。又,所謂發散角度θc,係指於通過端面13(端面14)與倒角面13a、13b(倒角面14a、14b)相交之各角部而導入至玻璃基板10內之光線L7、L8(光線L10、L11)導入至玻璃基板10內之前、實質上為平行光之檢查光L藉由凹透鏡28變成發散光後之狀態下,於光線L7、L8(光線L10、L11)之延長線彼此相交之點上該等之延長線所形成之角度θc。當檢查光之光線L7、L8(光線L10、L11)自端面13(端面14)被導入至玻璃基板10內時,光線之角度會因空氣與玻璃基板10之折射率差而改變,因此玻璃基板10內之光L7、L8(光線L10、L11)之延長線所成之角度與θc並不相同。As shown in Fig. 7, in the second embodiment, the concave lens 28 is provided in front of the end surface 13 (end surface 14), so that the inspection light L becomes divergent light having a divergence angle of θc and is inclined with respect to the main surface 11 (main surface 12) only The angle θg is inclined and introduced into the glass substrate 10. In this case, the inclination angle θg is an angle of the light ray L9 (light ray L12) which passes through the center of the concave lens 28 and whose ray angle is not changed with respect to the main surface 11 (main surface 12). Further, the divergence angle θc refers to light rays L7 and L8 that are introduced into the glass substrate 10 through the respective corner portions where the end surface 13 (end surface 14) and the chamfered surfaces 13a and 13b (the chamfered surfaces 14a and 14b) intersect ( Before the light beams L10 and L11 are introduced into the glass substrate 10, the inspection light L which is substantially parallel light is diverged light by the concave lens 28, and intersects the extension lines of the light beams L7 and L8 (light rays L10 and L11). The angle θc formed by the extension lines of the points. When the light rays L7 and L8 (light rays L10, L11) of the inspection light are introduced into the glass substrate 10 from the end surface 13 (end surface 14), the angle of the light changes due to the difference in refractive index between the air and the glass substrate 10, so the glass substrate The angle formed by the extension lines of the light L7 and L8 (light rays L10, L11) in 10 is not the same as θc.
該傾斜角度θg及發散角度θc係分別以滿足以下所有條件之方式而設定。即,關於自端面13導入至玻璃基板10內之檢查光L,光線L5必需通過邊界面E與邊界面B之相交線Be上或者較其更靠端面13側,且光線L6必需通過端面14與倒角面14a相交之角部、或者較其更靠端面14側。此外,關於自端面14導入至玻璃基板10內之檢查光L,光線L9必需通過邊界面F與邊界面D之相交線Df上、或者較其更靠端面14側,且光線L8必需通過端面13與倒角面13b相交之角部、或者較其更靠端面13側。The inclination angle θg and the divergence angle θc are set so as to satisfy all of the following conditions. That is, with respect to the inspection light L introduced into the glass substrate 10 from the end surface 13, the light ray L5 must pass through the intersection line Be of the boundary surface E and the boundary surface B or be closer to the end surface 13 side, and the light ray L6 must pass through the end surface 14 and The corner portion where the chamfered surface 14a intersects or the end surface 14 side thereof. Further, regarding the inspection light L introduced into the glass substrate 10 from the end surface 14, the light ray L9 must pass through the intersection line Df of the boundary surface F and the boundary surface D, or be closer to the end surface 14 side, and the light ray L8 must pass through the end surface 13 The corner portion intersecting the chamfered surface 13b or the end surface 13 side thereof.
例如,於光罩基底用玻璃基板之製作完成時(研磨步驟結束後)之縱橫尺寸為約152mm×152mm×6.35mm、倒角量m為0.6mm之情形時,若將最低限度應使檢查光抵達之特定區域設為132mm×132mm×6.4mm,則發散角度θc之一半角度與傾斜角度θg之和為2.4°以上即可,可使發散角度θc為0.8°、傾斜角度為2.0°。For example, when the production of the glass substrate for the reticle base is completed (after the completion of the polishing step), the aspect ratio is about 152 mm × 152 mm × 6.35 mm, and the amount of chamfering m is 0.6 mm, the inspection light should be minimized. When the specific region to be reached is 132 mm × 132 mm × 6.4 mm, the sum of the half angle of the divergence angle θc and the inclination angle θg may be 2.4° or more, and the divergence angle θc may be 0.8° and the inclination angle may be 2.0°.
使具有可滿足該等條件之發散角度θc之檢查光L向主表面11側傾斜僅傾斜角度θg而自端面13導入,並檢查螢光之有無,進而使具有相同發散角度θc之檢查光L向主表面12側傾斜僅傾斜角度θg而自端面14導入,來檢查螢光之有無,藉此可使檢查光遍及作為特定區域之132mm×132mm×6.4mm之整體,從而可對整個特定區域內進行內部缺陷之檢查。The inspection light L having the divergence angle θc satisfying the above conditions is inclined at the inclination angle θg toward the main surface 11 side, and is introduced from the end surface 13 to check the presence or absence of the fluorescence, and further the inspection light L having the same divergence angle θc The main surface 12 is inclined at an inclination angle θg and is introduced from the end surface 14 to check the presence or absence of fluorescence, whereby the inspection light can be made as a whole of 132 mm × 132 mm × 6.4 mm as a specific region, so that the entire specific region can be performed. Inspection of internal defects.
再者,凹透鏡28係為使來自檢查光源之實質上平行之檢查光變成發散光所必需者,因此即使係球面之凹透鏡亦滿足上述功能。然而,必需的是檢查光之朝向基板之厚度方向的發散,而檢查光之朝向與主表面平行之方向之發散則未必需要。反之,若考慮到因發散而引起的檢查光之光強度的減少,則較好的莫如係將朝向與主表面平行之方向之發散設為最低限度。若考慮到該等方面,則作為凹透鏡28,較理想的是使用柱面透鏡,主要使檢查光僅向基板之厚度方向發散。又,只要可使大致平行之檢查光變成發散光則可使用任何機構,亦可使用凹面鏡。於該凹面鏡之情形時,較理想的亦係使用柱面凹面鏡,主要使檢查光僅向基板之厚度方向發散。此外之光罩基底用玻璃基板之製造方法、光罩基底之製造方法、及曝光用光罩之製造方法相關之事項與實施形態1之情形相同。Further, since the concave lens 28 is necessary for causing the substantially parallel inspection light from the inspection light source to become divergent light, even a spherical concave lens satisfies the above-described function. However, it is necessary to check the divergence of the light toward the thickness direction of the substrate, and the divergence of the direction of the inspection light in the direction parallel to the main surface is not necessarily required. On the other hand, in consideration of the decrease in the intensity of the light of the inspection light due to the divergence, it is preferable to minimize the divergence toward the direction parallel to the main surface. In consideration of such aspects, it is preferable to use a cylindrical lens as the concave lens 28, and mainly to illuminate the inspection light only in the thickness direction of the substrate. Further, any mechanism may be used as long as the substantially parallel inspection light can be converted into divergent light, and a concave mirror can also be used. In the case of the concave mirror, it is preferable to use a cylindrical concave mirror mainly to cause the inspection light to diverge only in the thickness direction of the substrate. Further, the method of manufacturing the glass substrate for the mask base, the method of manufacturing the mask base, and the method of manufacturing the exposure mask are the same as those in the first embodiment.
該實施形態3與實施形態1之不同點在於:並非於(3)光罩基底用玻璃基板之研磨步驟之前,而是於(4)光罩基底之製造步驟後進行檢查玻璃基板之內部缺陷之步驟即缺陷檢查步驟。The third embodiment differs from the first embodiment in that (3) before the polishing step of the glass substrate for the mask base, but after (4) the manufacturing step of the mask substrate, the internal defects of the glass substrate are inspected. The step is the defect inspection step.
藉由與(2)光罩基底用玻璃基板之內部缺陷檢查步驟相同之方法,對藉由(4)光罩基底之製造步驟而製造之光罩基底進行玻璃基板之內部缺陷的檢查。光罩基底之玻璃基板之大小係以縱橫尺寸為約152mm×152mm×6.35mm、倒角量m為0.6mm為目標進行製造,若加入誤差而將最低限度應使檢查光抵達之特定區域設為132mm×132mm×6.4mm,則檢查光之傾斜角度θg為2.4°即可。The inside of the glass substrate was inspected by the photomask substrate manufactured by the (4) photomask substrate manufacturing step by the same method as (2) the internal defect inspection step of the photomask base glass substrate. The size of the glass substrate of the mask base is manufactured with the object of the aspect ratio of about 152 mm × 152 mm × 6.35 mm and the amount of chamfering m of 0.6 mm. If an error is added, the specific area where the inspection light is to be reached should be set to a minimum. 132 mm × 132 mm × 6.4 mm, the inclination angle θg of the inspection light may be 2.4°.
根據該實施形態3,可獲得與實施形態1之情形相同之效果。又,由於螢光會於基板主表面11與薄膜之界面反射,因此亦可獲得更容易識別螢光之有無之效果。再者,作為將檢查光導入至光罩基底之玻璃基板10內之導入方法,亦可如實施形態2所示,使用凹透鏡28等將檢查光L變成具有發散角度θc之發散光,自端面13側及端面14側分別導入至玻璃基板10之內部。此時之發散角度θc及傾斜角度θg與實施形態2之情形相同即可。According to the third embodiment, the same effects as those in the first embodiment can be obtained. Further, since the fluorescent light is reflected at the interface between the main surface 11 of the substrate and the film, the effect of more easily identifying the presence or absence of the fluorescent light can be obtained. Further, as a method of introducing the inspection light into the glass substrate 10 of the reticle base, as shown in the second embodiment, the inspection light L can be converted into divergent light having a divergence angle θc using the concave lens 28 or the like, from the end surface 13 The side and the end surface 14 side are respectively introduced into the inside of the glass substrate 10. The divergence angle θc and the inclination angle θg at this time may be the same as those in the second embodiment.
亦可對藉由(5)曝光用光罩之製造步驟所製造之曝光用光罩,進行與對光罩基底所進行之情形相同的內部缺陷檢查。又,藉由照射檢查光而由內部缺陷所產生之螢光,根據檢查光之照射強度、內部缺陷之種類或構造不同,所產生之螢光之光量會發生較大變化,因此若需要更確實地排除內部缺陷,則亦可於未研磨之玻璃基板之階段、研磨並完成之光罩基底用玻璃基板之階段、光罩基底之階段、曝光用光罩之階段中任意複數個階段、或所有階段進行內部缺陷檢查。It is also possible to perform the same internal defect inspection as that performed on the mask substrate by the exposure mask manufactured by the (5) manufacturing step of the exposure mask. Further, the amount of fluorescent light generated by the internal defect caused by the irradiation of the inspection light is greatly changed depending on the irradiation intensity of the inspection light and the type or structure of the internal defect, so that it is necessary to be more sure. If the internal defects are excluded, the stage of the unpolished glass substrate, the stage of polishing the glass substrate for the reticle base, the stage of the reticle base, and the stage of the exposure reticle may be any number of stages, or all The stage performs an internal defect check.
圖8係關於本發明之實施形態4之光罩基底用玻璃基板之內部缺陷檢查步驟的說明圖,圖9係圖8之A部放大圖,圖10係發散角θc之說明圖,圖11係表示用以實施本發明之實施形態1之光罩基底用玻璃基板之內部缺陷檢查步驟之裝置構成的圖。以下,一面參照該等圖式,一面說明本發明之實施形態4之光罩基底用玻璃基板之製造方法、光罩基底之製造方法及曝光用光罩之製造方法。再者,作為本實施形態4之檢查對象之光罩基底用玻璃基板係與圖1及圖2所示之光罩基底用玻璃基板相同者,因此對相同部分附以相同符號進行說明。FIG. 8 is an explanatory view showing an internal defect inspection step of the glass substrate for a reticle base according to Embodiment 4 of the present invention, FIG. 9 is an enlarged view of a portion A of FIG. 8, and FIG. 10 is an explanatory diagram of a divergence angle θc, and FIG. The structure of the apparatus for performing the internal defect inspection step of the glass substrate for a reticle base according to the first embodiment of the present invention. Hereinafter, a method of manufacturing a glass substrate for a mask base according to Embodiment 4 of the present invention, a method for producing a mask base, and a method for producing an exposure mask will be described with reference to the drawings. In addition, the glass substrate for the mask base to be inspected in the fourth embodiment is the same as the glass substrate for the mask base shown in FIGS. 1 and 2, and therefore, the same portions will be denoted by the same reference numerals.
實施形態4之光罩基底用玻璃基板之製造方法包括如下步驟:(1)成為缺陷檢查對象之光罩基底用玻璃基板之研削步驟;(2)光罩基底用玻璃基板之缺陷檢查步驟;以及(3)光罩基底用玻璃基板之研磨步驟。又,實施形態4之光罩基底之製造方法係對藉由上述(1)~(3)之步驟所製造的光罩基底用玻璃基板進行(4)光罩基底之製造步驟。另外,實施形態4之曝光用光罩之製造方法係對藉由(4)之步驟所製造的光罩基底進行(5)曝光用光罩之製造步驟。上述步驟中,實施形態4之最大特徵在於(2)光罩基底用玻璃基板之缺陷檢查步驟中所使用之光罩基底用玻璃基板之內部缺陷之檢查方法,其他步驟係大致使用眾所周知之步驟,因此以下對眾所周知之步驟予以必要最小限度的說明,而主要說明光罩基底用玻璃基板之缺陷檢查方法。The method for producing a glass substrate for a mask base according to the fourth embodiment includes the steps of: (1) a grinding step of a glass substrate for a mask base to be subjected to defect inspection; and (2) a defect inspection step of a glass substrate for a mask base; (3) A polishing step of a glass substrate for a mask base. Further, in the method of manufacturing a mask base according to the fourth embodiment, the step of manufacturing the mask base is performed on the glass substrate for a mask base manufactured by the steps (1) to (3). Further, in the method for producing an exposure mask according to the fourth embodiment, the manufacturing step of the exposure mask is performed on the mask substrate manufactured by the step (4). In the above-described steps, the most important feature of the fourth embodiment is the method for inspecting the internal defects of the glass substrate for the mask base used in the defect inspection step of the glass substrate for the mask base, and the other steps are generally performed using well-known steps. Therefore, the following description of the well-known steps will be given as a minimum, and the defect inspection method of the glass substrate for a reticle base will be mainly described.
再者,(2)光罩基底用玻璃基板之缺陷檢查步驟即使對於(3)光罩基底用玻璃基板之研磨步驟後之玻璃基板、(4)光罩基底之製造步驟後之光罩基底、或(5)曝光用光罩之製造步驟後之曝光用光罩而進行,內部缺陷檢查之精度亦無實質上之差異。然而,若該步驟係於先進行(3)之光罩基底用玻璃基板之研磨步驟、(4)光罩基底之製造步驟、及(5)曝光用光罩之製造步驟實施,則會對亦包括存在內部缺陷之不合格品在內之所有玻璃基板進行研磨及薄膜之成膜,故而產生較大浪費,因此較好的是於(3)之研磨步驟之前進行該步驟。再者,當重點放在更確實地發現內部缺陷之情形時,對玻璃基板之研磨步驟已結束之光罩基底用玻璃基板、於該玻璃基板上形成有圖案形成用薄膜之光罩基底、曝光用光罩進行缺陷檢查步驟即可。Further, (2) the defect inspection step of the glass substrate for the mask base, even for the (3) glass substrate after the polishing step of the glass substrate for the mask base, and (4) the mask substrate after the manufacturing step of the mask substrate, Or (5) the exposure mask after the manufacturing step of the exposure mask is used, and the accuracy of the internal defect inspection is not substantially different. However, if this step is performed by first performing the polishing step of the glass substrate for the mask base (3), (4) the manufacturing step of the mask substrate, and (5) the manufacturing steps of the exposure mask, It is preferable to carry out this step before the grinding step of (3), since all the glass substrates including the defective products having internal defects are subjected to polishing and film formation, which causes a large waste. Further, when focusing on the case where the internal defect is more reliably found, the glass substrate for the reticle substrate on which the polishing step of the glass substrate is completed, the reticle substrate on which the film for pattern formation is formed on the glass substrate, and the exposure Use the mask to perform the defect inspection step.
自藉由眾所周知之方法(例如參照日本專利特開平8-31723號公報、日本專利特開2003-81654號公報等)而製成之合成石英玻璃錠,切出約152.4mm×約152.4mm×約6.85mm之板狀體,從而獲得合成石英之玻璃基板。該玻璃基板包含相對向之兩個主表面、以及與該兩個主表面正交之四個端面。A synthetic quartz glass ingot prepared by a well-known method (for example, refer to Japanese Patent Laid-Open No. Hei 8-31723, No. 2003-81654, etc.), cut out about 152.4 mm × about 152.4 mm × about A plate-shaped body of 6.85 mm to obtain a glass substrate of synthetic quartz. The glass substrate includes two major surfaces opposite to each other and four end faces orthogonal to the two major surfaces.
對上述玻璃基板之主表面與端面相交之角部實施倒角加工之後,對導入檢查光之端面實施鏡面研磨,以便可將檢查光導入至玻璃基板內部,從而獲得光罩基底用玻璃基板10。該玻璃基板10係與圖1及圖2所示之光罩基底用玻璃基板相同者,其包含兩個主表面11、12、四個端面13、14、15、16、以及八個倒角面13a、13b、14a、14b、15a、15b、16a、16b。此處,導入檢查光之端面(一端面)13之表面粗糙度Ra(算術平均粗糙度)設為約0.03μm以下。再者,藉由光罩基底之研磨步驟對四個端面全部實施鏡面研磨,因此亦可於該研削步驟之階段,對其他端面14、15、16實施鏡面研磨。將如此獲得之光罩基底用玻璃基板10提供至下一步驟即內部缺陷之檢查步驟。After chamfering the corner portion where the main surface and the end surface of the glass substrate intersect, the end surface into which the inspection light is introduced is mirror-polished so that the inspection light can be introduced into the inside of the glass substrate to obtain the glass substrate 10 for the mask base. The glass substrate 10 is the same as the glass substrate for a mask base shown in FIGS. 1 and 2, and includes two main surfaces 11, 12, four end faces 13, 14, 15, 16 and eight chamfered faces. 13a, 13b, 14a, 14b, 15a, 15b, 16a, 16b. Here, the surface roughness Ra (arithmetic mean roughness) of the end surface (one end surface) 13 into which the inspection light is introduced is set to be about 0.03 μm or less. Further, since all of the four end faces are mirror-polished by the polishing step of the mask base, the other end faces 14, 15, 16 can also be mirror-polished at the stage of the grinding step. The reticle substrate thus obtained is supplied to the glass substrate 10 to the next step, that is, the inspection step of the internal defect.
該步驟係藉由以下說明之缺陷檢查方法對以如上所述方式而獲得之光罩基底用玻璃基板10檢查其內部缺陷之有無的步驟。以下,說明該步驟中所使用之光罩基底用玻璃基板之檢查方法。This step is a step of inspecting the presence or absence of internal defects of the reticle base glass substrate 10 obtained as described above by the defect inspection method described below. Hereinafter, a method of inspecting the glass substrate for a reticle base used in this step will be described.
於圖8中,藉由凹透鏡28將發散角度為2 mrad之實質上為平行光之檢查光L變成發散光,自玻璃基板10之端面13導入至玻璃基板10內(圖8之以實線表示之光),此時檢查藉由照射檢查光而由內部缺陷所產生之螢光的有無。In FIG. 8, the inspection light L having substantially parallel light having a divergence angle of 2 mrad is converted into divergent light by the concave lens 28, and is introduced into the glass substrate 10 from the end surface 13 of the glass substrate 10 (shown by a solid line in FIG. 8) At this time, the presence or absence of the fluorescent light generated by the internal defect by the inspection light is examined.
於此情形時,以如下方式設定檢查光之發散角度:若將導入至玻璃基板10內之檢查光L中、通過端面13與倒角面13a、13b相交之角部而導入至玻璃基板內的光線設為L1、L2,則該光線L1、L2位於特定區域之表面與背面兩主表面11、12側之各邊界面E、F(參照圖9及圖10)、與特定區域之端面13側之邊界面B的相交線Be、Bf上、或者較其更靠端面13側。In this case, the divergence angle of the inspection light is set such that the inspection light L introduced into the glass substrate 10 is introduced into the glass substrate through the corner portion where the end surface 13 intersects the chamfered surfaces 13a and 13b. When the light is L1 and L2, the light beams L1 and L2 are located on the boundary surfaces E and F (see FIGS. 9 and 10) on the surface and the back surface of the main surface 11 and 12 on the specific region, and the end surface 13 side of the specific region. The intersection lines Be, Bf of the boundary surface B are on the side of the end face 13 or more.
此處,所謂發散角度,係指於通過端面13與倒角面13a、13b相交之各角部而導入至玻璃基板10內之光線L1、L2導入至玻璃基板10內之前、實質上為平行光之檢查光L藉由凹透鏡28變成發散光後之狀態下,如圖10所示,於光線L1、L2之延長線彼此相交之點上該等延長線所形成之角度(θc)(當檢查光之光線L1、L2自端面13被導入至玻璃基板10內時,光線之角度會因空氣與玻璃基板10之折射率差而改變,因此玻璃基板10內之光線L1、L2之延長線所形成之角度與θc並不相同)。Here, the divergence angle refers to substantially parallel light before the light rays L1 and L2 introduced into the glass substrate 10 are introduced into the glass substrate 10 through the corner portions where the end surface 13 and the chamfered surfaces 13a and 13b intersect. In the state where the inspection light L becomes divergent light by the concave lens 28, as shown in FIG. 10, the angle (θc) formed by the extension lines at the point where the extension lines of the light rays L1, L2 intersect each other (when the inspection light is When the light beams L1 and L2 are introduced into the glass substrate 10 from the end surface 13, the angle of the light changes due to the difference in refractive index between the air and the glass substrate 10, so that the extension lines of the light rays L1 and L2 in the glass substrate 10 are formed. The angle is not the same as θc).
此處,特定區域之光罩基底用玻璃基板上厚度方向(主表面11與主表面12之間之方向)之範圍,並非必需使檢查光抵達至厚度方向之整個區域。其原因在於,當研削步驟結束後進行缺陷檢查步驟時,在其後之研磨步驟中,會藉由研磨主表面11、12而自兩側起於厚度方向上削掉特定量之玻璃(圖9之11a部分),因此即使被削掉之區域內存在內部缺陷,在完成後之光罩基底用玻璃基板中,該內部缺陷亦已被去除。然而,考慮到形成圖案形成用薄膜之側之主表面及其相反側之主表面上被研磨之量稍有不同、兩主表面並非完全之平板形狀等,較佳的是在厚度方向之檢查光所抵達之區域稍有裕度。Here, the range of the thickness direction of the reticle base of the specific region (the direction between the main surface 11 and the main surface 12) is not necessarily required to cause the inspection light to reach the entire region in the thickness direction. The reason for this is that when the defect inspection step is performed after the grinding step is finished, in the subsequent grinding step, a certain amount of glass is cut in the thickness direction from both sides by grinding the main surfaces 11 and 12 (Fig. 9). Part 11a), so even if there is an internal defect in the area to be cut, the internal defect has been removed in the glass substrate for the reticle base after completion. However, in consideration of the fact that the main surface on the side where the film for pattern formation is formed and the main surface on the opposite side thereof are slightly different in amount, the two main surfaces are not completely flat, etc., it is preferable to inspect the light in the thickness direction. The area you arrived in was slightly marginal.
例如,於主表面(包含倒角部分之大小)之大小約為152mm×152mm之光罩基底用玻璃基板的情形時,板厚(厚度方向之厚度)以研削步驟結束後之板厚為6.85mm至6.35mm為目標進行研磨。若考慮到上述裕度,則檢查光抵達至以厚度方向之基板中心為基準最低限度6.4mm之厚度之區域即可。即,關於研削步驟結束後之玻璃基板中、以厚度方向之基板中心為基準較6.4mm更靠外側之部分,將於之後的研磨步驟中被去除,因此即使將上述部分排除在應檢查之特定區域以外亦無問題。For example, in the case of a glass substrate for a reticle base having a size of about 152 mm × 152 mm on the main surface (including the size of the chamfered portion), the thickness (thickness in the thickness direction) is 6.85 mm after the end of the grinding step. Grinding is carried out to a target of 6.35 mm. In consideration of the above-described margin, it is sufficient that the inspection light reaches a region having a thickness of at least 6.4 mm based on the center of the substrate in the thickness direction. In other words, in the glass substrate after the completion of the grinding step, the portion outside the center of the substrate in the thickness direction is more than 6.4 mm, and is removed in the subsequent polishing step. Therefore, even if the portion is excluded from the inspection. There is no problem outside the area.
另一方面,特定區域之主表面側之範圍係,當使用光罩基底用玻璃基板製造光罩基底,並基於該光罩基底而製作曝光用光罩時,對於薄膜上形成轉印圖案之區域,只要最低限度地覆蓋即可。其原因在於,當基於該光罩基底用玻璃基板製作曝光用光罩,並將其設置於曝光裝置之光罩平台上,將圖案轉印至轉印對象物(晶圓等)時,形成轉印圖案之區域之外側的主表面11、12之區域的曝光之光會被薄膜遮蔽,因此即使該區域內存在內部缺陷,亦不會對轉印對象物帶來不良影響。On the other hand, the range of the main surface side of the specific region is a region where the transfer pattern is formed on the film when the photomask substrate is fabricated using the glass substrate for the reticle base and the exposure reticle is formed based on the reticle substrate. As long as the minimum coverage is enough. This is because the exposure mask is formed on the glass substrate for the reticle base, and is placed on the reticle stage of the exposure apparatus, and the pattern is transferred to the transfer target (wafer or the like) to form a turn. The exposed light of the areas on the outer surfaces 11 and 12 on the outer side of the printed pattern area is shielded by the film, so that even if there is an internal defect in the area, the transfer target is not adversely affected.
例如,於上述主表面大小約為152mm×152mm之光罩基底用玻璃基板之情形時,形成轉印圖案之區域通常設為以光罩基底的中心為基準132mm×132mm之內側之區域。於此情形時,只要最低限度地於與端面13平行、且自光罩基底之中心起朝向端面13相距66mm之距離處設定特定區域之邊界面B即可。以玻璃內之光線L1、L2位於該邊界面B與兩主表面11、12側之各邊界面E、F相交之兩相交線Be、Bf上、或較其更靠端面13側的方式選定發散角度θc即可。再者,曝光用光罩在曝光裝置之光罩平台上,以未形成薄膜之側之主表面朝向曝光之光之光源側的形式而設置。因此,即使於特定區域之外側之區域曝光之光亦可照射至玻璃基板10之內部,因此若存在內部缺陷,則會自該處產生螢光。當內部缺陷位於特定區域之邊界面B附近之情形時,自該處所發出之螢光可能會對朝向轉印對象物之圖案轉印造成不良影響。當考慮到此種情況時,較好的是將特定區域具有裕度地設定為以光罩基底之中心為基準142mm×142mm之內側的區域。若更進一步使其具有裕度,則將特定區域設定為例如146mm×146mm之內側之區域更佳。For example, in the case where the main surface has a glass substrate for a mask base having a size of about 152 mm × 152 mm, the region where the transfer pattern is formed is usually an area of 132 mm × 132 mm on the basis of the center of the mask base. In this case, the boundary surface B of the specific region may be set at least at a distance of 66 mm from the center of the mask base toward the end surface 13 in parallel with the end surface 13. The light rays L1 and L2 in the glass are selected to be divergent in such a manner that the boundary surface B is on the two intersecting lines Be and Bf where the boundary surfaces E and F on the two main surfaces 11 and 12 are intersected, or on the side closer to the end surface 13 side. The angle θc is sufficient. Further, the exposure mask is provided on the mask stage of the exposure apparatus in such a manner that the main surface on the side where the film is not formed faces the light source side of the exposed light. Therefore, even if light exposed in an area outside the specific area can be irradiated to the inside of the glass substrate 10, if there is an internal defect, fluorescence is generated therefrom. When the internal defect is located in the vicinity of the boundary face B of the specific region, the fluorescent light emitted from the place may adversely affect the pattern transfer toward the transfer object. In consideration of such a case, it is preferable to set the specific region with a margin to a region inside the 142 mm × 142 mm with respect to the center of the mask base. If it is further made to have a margin, it is more preferable to set the specific area to an area inside, for example, 146 mm × 146 mm.
若考慮以上之情況,則當製造約152mm×152mm×6.35mm之光罩基底用玻璃基板時,於內部缺陷檢查步驟中應檢查之特定區域最低限度設為以基板中心為基準132mm×132mm×6.4mm之玻璃基板內部即可。又,當要求更確實之內部缺陷檢查時,較好的是將特定區域設為以基板中心為基準142mm×142mm×6.45mm之玻璃基板內部。In consideration of the above, when a glass substrate for a reticle base of about 152 mm × 152 mm × 6.35 mm is manufactured, the specific area to be inspected in the internal defect inspection step is at least 132 mm × 132 mm × 6.4 based on the center of the substrate. The inside of the glass substrate of mm can be used. Further, when a more accurate internal defect inspection is required, it is preferable to set the specific region to the inside of the glass substrate with the substrate center as a reference of 142 mm × 142 mm × 6.45 mm.
藉由以此方式選定發散角度θc,僅將檢查光L自玻璃基板10之端面13導入至玻璃基板10內,即可將檢查光照射至玻璃基板10之應進行內部缺陷檢查的整個特定區域。藉此,甚至可無遺漏地檢測出玻璃基板10之特別是表面與背面附近之微小的內部缺陷。By selecting the divergence angle θc in this manner, only the inspection light L is introduced into the glass substrate 10 from the end surface 13 of the glass substrate 10, and the inspection light can be irradiated onto the entire specific region of the glass substrate 10 where the internal defect inspection should be performed. Thereby, even minute internal defects of the glass substrate 10, particularly near the surface and the back surface, can be detected without fail.
即,如圖8所示,自玻璃基板10之端面13導入至玻璃基板10內之檢查光L,除了光線L1、L2之外側之區域即區域S3、S4以外,亦遍及玻璃基板10內之其他全部區域。藉此,可使檢查光L遍及玻璃基板10內之形成轉印圖案之區域,且藉由檢測此時所產生之缺陷光,可比較簡單地進行無遺漏之缺陷檢測。That is, as shown in FIG. 8, the inspection light L introduced into the glass substrate 10 from the end surface 13 of the glass substrate 10 is also included in the glass substrate 10 in addition to the regions S3 and S4 which are outside the light beams L1 and L2. All areas. Thereby, the inspection light L can be spread over the region where the transfer pattern is formed in the glass substrate 10, and by detecting the defective light generated at this time, the defect detection can be performed relatively easily.
於上述實施形態4中,上述發散角θc具體而言係如下所示。In the fourth embodiment, the divergence angle θc is specifically as follows.
‧檢查光:ArF準分子雷射光(曝光波長:193nm)‧Check light: ArF excimer laser light (exposure wavelength: 193 nm)
‧玻璃基板10之材質:合成石英玻璃‧Material of glass substrate 10: Synthetic quartz glass
‧折射率:1.52(曝光波長:在193nm)‧Refractive index: 1.52 (exposure wavelength: at 193 nm)
‧玻璃基板10之尺寸‧ size of glass substrate 10
縱‧橫:152×152mm、Vertical and horizontal: 152 × 152mm,
厚度tg:6.4mm(研磨步驟後之目標厚度為6.35mm+誤差範圍)Thickness tg: 6.4 mm (target thickness after grinding step is 6.35 mm + error range)
倒角量m(參照圖9):0.6mmChamfer amount m (refer to Figure 9): 0.6mm
‧特定區域:132mm×132mm×6.4mm(以基板中心為基準)‧Specific area: 132mm × 132mm × 6.4mm (based on the center of the substrate)
‧檢查光之發散角度θg:4.8°‧Check the divergence angle of light θg: 4.8°
‧凹透鏡28:柱面透鏡(焦距:300mm)‧ concave lens 28: cylindrical lens (focal length: 300mm)
‧凹透鏡28與端面13之距離d:10mm‧Distance between concave lens 28 and end face 13: 10 mm
上述實施形態4中之發散角度θc係設為可覆蓋端面13側之特定區域之邊界面B之大致最小的角度。若僅就滿足本案發明之作用與效果之觀點考慮,則發散角度θc亦可大於最小之角度。然而,隨著增大發散角度θc,導入至玻璃基板之檢查光之光強度(密度)會逐漸變小,因此若檢查光源之光強度相同,則有可能藉由照射檢查光而自內部缺陷所發出之螢光之光強度亦逐漸變小,從而難以檢測螢光。關於該問題,若增強檢查光源之光強度則基本上得以解決,但若過度增大檢查光源之光強度,則有可能由於檢查光之能量變大而對基板內部造成損害。若考慮到該方面、設備增強相關之經濟性之方面,則發散角度θc較好的是可覆蓋端面13側(導入檢查光之側之端面)之特定區域之邊界面B的最小角度。The divergence angle θc in the above-described fourth embodiment is an angle at which the boundary surface B of the specific region on the end face 13 side can be covered. The divergence angle θc may be greater than the minimum angle only if it is considered to satisfy the action and effect of the invention of the present invention. However, as the divergence angle θc is increased, the light intensity (density) of the inspection light introduced into the glass substrate is gradually reduced. Therefore, if the light intensity of the inspection light source is the same, it is possible to illuminate the inspection light from the internal defect. The intensity of the emitted fluorescent light is also gradually reduced, making it difficult to detect fluorescence. Regarding this problem, if the light intensity of the inspection light source is enhanced, it is basically solved. However, if the light intensity of the inspection light source is excessively increased, there is a possibility that damage to the inside of the substrate is caused by the increase in the energy of the inspection light. In consideration of the economic aspect related to the aspect and the device enhancement, the divergence angle θc is preferably a minimum angle of the boundary surface B of the specific region covering the end surface 13 side (the end surface on which the inspection light is introduced).
例如,於如上所述光罩基底用玻璃基板之製作完成時(研磨步驟結束後)之縱橫尺寸約為152mm×152mm×6.35mm、倒角量m為0.6mm之情形時,若將最低限度應使檢查光抵達之特定區域設為132mm×132mm×6.4mm,則發散角度θc為4.8°以上即可。又,若基板尺寸相同,且將應使檢查光抵達之特定區域設為142mm×142mm×6.45mm,則發散角度θc為10.3°以上即可。又,若考慮到因增大藉由凹透鏡而發散之發散角度而導致之檢查光之光強度的降低、及增強檢查光源之光強度而對基板產生損害之危險性或成本方面等,則發散角度θc較好的是7.0°以下。For example, when the production of the glass substrate for the reticle base is completed as described above (after the end of the polishing step), the aspect ratio is about 152 mm × 152 mm × 6.35 mm, and the amount of chamfering m is 0.6 mm. When the specific area where the inspection light arrives is 132 mm × 132 mm × 6.4 mm, the divergence angle θc may be 4.8° or more. Further, when the substrate size is the same and the specific region where the inspection light is to be reached is 142 mm × 142 mm × 6.45 mm, the divergence angle θc may be 10.3° or more. Further, the divergence angle is considered in consideration of the risk of damage to the substrate due to a decrease in the light intensity of the inspection light due to the divergence angle diverging by the concave lens, and the increase in the light intensity of the inspection light source. Θc is preferably 7.0 or less.
再者,凹透鏡28係為使來自檢查光源之大致平行之檢查光變成發散光所必需者,因此即使係球面之凹透鏡亦滿足該功能。然而,必需的是檢查光之朝向基板之厚度方向的發散,而檢查光之朝向與主表面平行之方向之發散則未必需要。反之,若考慮到因發散而引起的檢查光之光強度的減少,則較好的莫如係將朝向與主表面平行之方向之發散設為最低限度。若考慮到該等方面,則作為凹透鏡28,較理想的是使用柱面透鏡,主要使檢查光僅向基板之厚度方向發散。又,只要可使大致平行之檢查光變成發散光則可使用任何機構,亦可使用凹面鏡。於該凹面鏡之情形時,較理想的亦係使用柱面凹面鏡,主要使檢查光僅向基板之厚度方向發散。Further, the concave lens 28 is necessary for causing the substantially parallel inspection light from the inspection light source to become divergent light, and therefore the concave lens of the spherical surface satisfies this function. However, it is necessary to check the divergence of the light toward the thickness direction of the substrate, and the divergence of the direction of the inspection light in the direction parallel to the main surface is not necessarily required. On the other hand, in consideration of the decrease in the intensity of the light of the inspection light due to the divergence, it is preferable to minimize the divergence toward the direction parallel to the main surface. In consideration of such aspects, it is preferable to use a cylindrical lens as the concave lens 28, and mainly to illuminate the inspection light only in the thickness direction of the substrate. Further, any mechanism may be used as long as the substantially parallel inspection light can be converted into divergent light, and a concave mirror can also be used. In the case of the concave mirror, it is preferable to use a cylindrical concave mirror mainly to cause the inspection light to diverge only in the thickness direction of the substrate.
其次,一面參照圖11,一面說明用以實施上述實施形態4之缺陷檢查步驟之裝置構成,並且更詳細地說明本發明之實施形態4之光罩基底用玻璃基板之缺陷檢查步驟。於圖11中,符號20係玻璃基板之缺陷檢查裝置。該玻璃基板之缺陷檢查裝置20包括:雷射裝置21,其用以產生檢查光L並照射至玻璃基板;XYZ平台22,其載置玻璃基板10並使其向X方向、Y方向、Z方向分別移動,並且發送其位置資訊;CCD相機23,其檢測玻璃基板10中產生之缺陷光;電腦27,其輸入來自CCD相機23之圖像資訊及來自XYZ平台22之位置資訊等,並進行特定之處理;以及柱面透鏡28,其將檢查光L變成發散光後導入至玻璃基板10。Next, the apparatus configuration for carrying out the defect inspection step of the above-described fourth embodiment will be described with reference to Fig. 11, and the defect inspection step of the glass substrate for a mask base according to the fourth embodiment of the present invention will be described in more detail. In Fig. 11, reference numeral 20 is a defect inspection device for a glass substrate. The glass substrate defect inspection device 20 includes a laser device 21 for generating inspection light L and irradiated to a glass substrate, and an XYZ stage 22 on which the glass substrate 10 is placed and oriented in the X direction, the Y direction, and the Z direction. Moving separately and transmitting its position information; CCD camera 23, which detects defective light generated in the glass substrate 10; computer 27, which inputs image information from the CCD camera 23 and position information from the XYZ platform 22, and performs specific And a cylindrical lens 28 that introduces the inspection light L into divergent light and introduces it into the glass substrate 10.
雷射裝置21係設置於XYZ平台22上所載置之玻璃基板10之端面13之側。柱面透鏡28沿該端面13而設置於玻璃基板10之端面13之側。自雷射裝置21所射出之檢查光L藉由柱面透鏡28而變成特定之發散光之後,通過端面13而導入至玻璃基板10內。The laser device 21 is disposed on the side of the end surface 13 of the glass substrate 10 placed on the XYZ stage 22. The cylindrical lens 28 is provided on the side of the end surface 13 of the glass substrate 10 along the end surface 13. The inspection light L emitted from the laser device 21 is converted into specific divergent light by the cylindrical lens 28, and then introduced into the glass substrate 10 through the end surface 13.
自雷射裝置21所射出之檢查光係光束形狀為7.0mm×4.0mm、功率為6mJ、頻率為400Hz之脈衝狀之ArF準分子雷射光(波長:193nm),柱面透鏡28係與玻璃基板10之端面13或14平行地配置者,且係其等端面與縱橫寬度大致相同而形成者。而且,作為透鏡之功能,係以長度方向(與基板主表面平行之方向)上為直角之切割面(基板厚度方向)作為凹透鏡而發揮作用。作為凹透鏡之功能如業已詳細說明般,係使檢查光L變成特定發散角之發散光者。再者,於長度方向上,不具有透鏡作用。The inspection light beam shape emitted from the laser device 21 is 7.0 mm × 4.0 mm, the power is 6 mJ, and the pulsed ArF excimer laser light (wavelength: 193 nm) having a frequency of 400 Hz, the cylindrical lens 28 and the glass substrate The end faces 13 or 14 of 10 are arranged in parallel, and the end faces thereof are formed to be substantially the same as the longitudinal and lateral widths. Further, as a function of the lens, a cut surface (substrate thickness direction) which is a right angle in a longitudinal direction (a direction parallel to the main surface of the substrate) functions as a concave lens. As a function of the concave lens, as described in detail, the inspection light L is made to become a divergent light of a specific divergence angle. Furthermore, there is no lens action in the length direction.
XYZ平台22係可載置玻璃基板10並使其於XYZ方向上移動,且使玻璃基板移動至所期望之位置,並向電腦27發送其位置資訊者。於進行本缺陷檢查之情形時,於檢查開始之位置上設置玻璃基板10,其次藉由雷射裝置21向玻璃基板10內導入檢查光L,並藉由CCD相機23來拍攝此時之螢光Lkc、Lkd之像,將上述圖像資訊及上述位置資訊發送至電腦27並加以儲存。其次,驅動XYZ平台22而使玻璃基板10向Y方向移動相當於檢查光L之寬度的距離,並同樣地照射檢查光L,藉由CCD相機23拍攝此時之螢光Lk、Lk之像,並且將位置資訊與上述圖像資訊一併發送至電腦27。藉由重複該動作,而自端面13之一端至另一端為止之所有區域導入檢查光L。The XYZ stage 22 is capable of placing the glass substrate 10 in the XYZ direction, moving the glass substrate to a desired position, and transmitting the position information to the computer 27. In the case of performing the defect inspection, the glass substrate 10 is placed at the position where the inspection is started, and then the inspection light L is introduced into the glass substrate 10 by the laser device 21, and the fluorescent light is captured by the CCD camera 23 The image of Lkc and Lkd is sent to the computer 27 and stored in the image information and the location information. Next, the XYZ stage 22 is driven to move the glass substrate 10 in the Y direction by a distance corresponding to the width of the inspection light L, and the inspection light L is irradiated in the same manner, and the image of the fluorescent light Lk and Lk at this time is captured by the CCD camera 23, And the location information is sent to the computer 27 together with the above image information. By repeating this operation, the inspection light L is introduced from all the ends of the end face 13 to the other end.
其次,於XYZ平台22上使玻璃基板10移動,並以端面14與柱面透鏡28相對向之方式而設置。繼而,自端面14導入檢查光L。其次,重複與自端面13導入之情形時相同之操作,自端面14之一端至另一端為止之所有區域導入檢查光L。藉此,將檢查光L照射至玻璃基板10內之所有區域,以儲存玻璃基板10內之所有區域之缺陷光之圖像。再者,除了如上所述將雷射裝置21及柱面透鏡28設置於玻璃基板10之端面13之側以外,若亦設置於端面14之側(以圖11之虛線顯示),則可維持著將玻璃基板10固定於XYZ平台22上之狀態而進行整個區域之檢查。Next, the glass substrate 10 is moved on the XYZ stage 22, and the end surface 14 is disposed to face the cylindrical lens 28. Then, the inspection light L is introduced from the end surface 14. Next, the same operation as in the case of introduction from the end face 13 is repeated, and the inspection light L is introduced from all the ends of the end face 14 to the other end. Thereby, the inspection light L is irradiated to all areas in the glass substrate 10 to store images of defective light in all areas in the glass substrate 10. Further, in addition to providing the laser device 21 and the cylindrical lens 28 on the side of the end surface 13 of the glass substrate 10 as described above, if it is also provided on the side of the end surface 14 (shown by a broken line in FIG. 11), it can be maintained. The entire area is inspected by fixing the glass substrate 10 to the XYZ stage 22.
CCD相機23係配置於表面與背面中之一面即面11之側(圖之上方),以製作根據自玻璃基板10所發出之光之資訊的圖像。即,偵測由玻璃基板10之內部缺陷所產生之螢光Lkc、Lkd,拍攝該螢光之像,並將其圖像資訊發送至電腦27。再者,於該實施形態4中,係使用所謂黑白相機作為CCD相機23。The CCD camera 23 is disposed on the side of the surface 11 which is one of the front surface and the back surface (above the figure) to produce an image based on the information of the light emitted from the glass substrate 10. That is, the fluorescent light Lkc, Lkd generated by the internal defects of the glass substrate 10 is detected, the image of the fluorescent light is captured, and the image information is transmitted to the computer 27. Further, in the fourth embodiment, a so-called black and white camera is used as the CCD camera 23.
電腦27輸入來自CCD相機23之圖像,於玻璃基板10之Y方向之各位置進行圖像處理,並就該玻璃基板10之Y方向之各位置,根據與玻璃基板10之X方向位置的關係,分析CCD相機23所接收之光Lkc、Lkd、Lg之光量(強度)。即,當光Lkc、Lkd、Lg之光量包含特定臨限值以上之局部的光量時,電腦27判斷為內部缺陷Kc、Kd已發出上述特定臨限值以上之局部的光量之光Lkc、Lkd,從而根據內部缺陷Kc、Kd所發出之局部的光量之光Lkc、Lkd的形狀等,對內部缺陷Kc、Kd之種類(局部脈紋、內容物、異質物)與該內部缺陷Kc、Kd之位置(玻璃基板10之X方向及Y方向之位置)一併進行特定並且檢測。The computer 27 inputs an image from the CCD camera 23, performs image processing at each position in the Y direction of the glass substrate 10, and sets the position of the glass substrate 10 in the Y direction according to the position in the X direction of the glass substrate 10. The amount of light (intensity) of the light Lkc, Lkd, and Lg received by the CCD camera 23 is analyzed. In other words, when the light amount of the light Lkc, Lkd, and Lg includes a partial light amount of a predetermined threshold or more, the computer 27 determines that the internal defects Kc and Kd have emitted the light Lkc and Lkd of the partial light amount of the specific threshold or more. Therefore, the types of internal defects Kc and Kd (local veins, contents, foreign matter) and the positions of the internal defects Kc, Kd are determined based on the shape of the partial light amount Lkc, Lkd emitted by the internal defects Kc, Kd, and the like. (The positions of the glass substrate 10 in the X direction and the Y direction) are collectively specified and detected.
例如,當玻璃基板10中存在局部脈紋或內容物作為內部缺陷Kc時,藉由之前使用圖6(A)而說明之方法將上述局部脈紋或內容物與其位置一併加以檢測,且當玻璃基板10中存在異質物作為內部缺陷Kd時,藉由之前使用圖6(B)而說明之方法將上述異質物與其位置一併加以檢測。For example, when local veins or contents are present as the internal defects Kc in the glass substrate 10, the local veins or contents are detected together with the position thereof by the method previously described using FIG. 6(A), and when When a foreign substance is present as the internal defect Kd in the glass substrate 10, the above-described foreign matter is detected together with the position thereof by the method previously described using FIG. 6(B).
上述玻璃基板之藉由缺陷檢查裝置20並未檢測出內部缺陷Kc、Kd之玻璃基板10為檢查合格品,並被提供至下一研磨步驟。The glass substrate 10 of the glass substrate on which the internal defects Kc and Kd are not detected by the defect inspection device 20 is an inspection product, and is supplied to the next polishing step.
對於藉由(2)缺陷檢查步驟而成為檢查合格品之玻璃基板10,對其主表面11、12、端面13、14、15、16、倒角面13a、13b、14a、14b、15a、15b、16a、16b進行鏡面研磨與精密研磨,以使其分別變成所期望之表面粗糙度,繼而實施清洗處理,從而獲得光罩基底用玻璃基板10。此時之主表面11、12之表面粗糙度較好的是均方根粗糙度(Rms)為0.2nm以下。The glass substrate 10 which is a good product by the (2) defect inspection step, the main surfaces 11, 12, the end faces 13, 14, 15, 16 and the chamfered faces 13a, 13b, 14a, 14b, 15a, 15b 16a and 16b are subjected to mirror polishing and precision polishing to have a desired surface roughness, and then subjected to a cleaning treatment to obtain a glass substrate 10 for a mask base. The surface roughness of the main surfaces 11 and 12 at this time is preferably a root mean square roughness (Rms) of 0.2 nm or less.
其次,使用眾所周知之濺鍍裝置、例如DC(direct current,直流)磁控濺鍍裝置等,於如上所述而獲得之光罩基底用玻璃基板10之主表面11上形成光罩圖案形成用之薄膜(半色調膜),從而獲得作為光罩基底之半色調型移相光罩基底。再者,作為該半色調膜所使用之材料,可列舉以使含有鉬、鉭、鎢、鋯等過渡金屬及矽之過渡金屬矽化物經氧化、氮化、氧氮化而成者作為主成分之材料。又,亦可將半色調膜設為包含主要調整針對曝光之光的穿透率之穿透率調整層、及主要針對透過膜中之曝光之光而調整相位差之相位調整層的兩層以上之積層構造。Next, a mask pattern is formed on the main surface 11 of the glass substrate 10 for a mask base obtained as described above by using a well-known sputtering apparatus, for example, a DC (direct current) magnetron sputtering apparatus. A film (halftone film) to obtain a halftone phase shift mask substrate as a mask base. In addition, as a material used for the halftone film, a transition metal hydride containing a transition metal such as molybdenum, niobium, tungsten or zirconium and lanthanum may be oxidized, nitrided or oxynitrided as a main component. Material. Further, the halftone film may be two or more layers including a transmittance adjustment layer that mainly adjusts the transmittance of the light for exposure, and a phase adjustment layer that adjusts the phase difference mainly for the light that is exposed to the permeable film. The layered structure.
其次,藉由眾所周知之圖案形成方法,於上述光罩基底(半色調型移相光罩基底)之半色調膜上形成圖案,從而獲得作為曝光用光罩之半色調移相光罩。即,於上述半色調膜之表面塗佈光阻之後進行加熱處理而形成光阻膜,並於該光阻膜上對特定之圖案進行刻寫與顯影處理而形成光阻圖案,並且將上述光阻圖案作為光罩,對半色調膜進行乾式蝕刻而形成半色調膜圖案,繼而去除光阻圖案,從而獲得於玻璃基板10上形成有半色調膜圖案之曝光用光罩。Next, a pattern is formed on the halftone film of the above-described mask substrate (halftone type phase shift mask substrate) by a well-known pattern forming method, thereby obtaining a halftone phase shift mask as an exposure mask. That is, a photoresist is applied to the surface of the halftone film, followed by heat treatment to form a photoresist film, and a specific pattern is written and developed on the photoresist film to form a photoresist pattern, and the photoresist is formed. The pattern is used as a mask, and the halftone film is dry-etched to form a halftone film pattern, and then the photoresist pattern is removed, thereby obtaining an exposure mask on which the halftone film pattern is formed on the glass substrate 10.
根據述實施形態4,於缺陷檢查步驟中,自玻璃基板10之端面13導入發散角設為θc之檢查光L而檢測缺陷光,其次自與該端面13相對向之端面14導入檢查光L而同樣地檢測缺陷光,藉此即使於存在倒角面之情形時,亦可使檢查光確實地抵達至玻璃基板內部之表面附近為止,同時,藉由將發散角抑制得較小,將檢查光之衰減抑制得較小,而可進行確實之缺陷檢測,從而可進行有效之檢查。According to the fourth embodiment, in the defect inspection step, the inspection light L having the divergence angle θc is introduced from the end surface 13 of the glass substrate 10 to detect the defective light, and the inspection light L is introduced from the end surface 14 facing the end surface 13 Similarly, the defective light is detected, so that even in the case where the chamfered surface is present, the inspection light can be surely reached to the vicinity of the surface inside the glass substrate, and at the same time, the inspection light is suppressed by suppressing the divergence angle to be small. The attenuation is suppressed to a small extent, and the defect detection can be performed, so that an effective inspection can be performed.
再者,於上述實施形態4中,已揭示於缺陷檢查步驟中,將接收內部缺陷Kc、Kd所發出之光Lkc、Lkd、Lg之CCD相機23配置於主表面11之側的示例,但該CCD相機23亦可配置於主表面12側或者端面14、15、16側。又,只要係已研磨至可導入檢查光之程度之端面,則亦可設為向端面13以外之端面側導入ArF準分子雷射光之配置。Further, in the above-described fourth embodiment, an example in which the CCD camera 23 that receives the light Lkc, Lkd, and Lg emitted from the internal defects Kc and Kd is disposed on the side of the main surface 11 is disclosed in the defect inspection step. The CCD camera 23 may be disposed on the main surface 12 side or the end surfaces 14, 15, 16 side. Moreover, as long as it is polished to the end surface to which the inspection light can be introduced, ArF excimer laser light may be introduced into the end surface side other than the end surface 13.
又,於上述實施形態4中,已說明曝光光源為ArF準分子雷射之情形,但只要係波長為200nm以下、較好的是波長為100nm~200nm之光,則亦可為F2準分子雷射。又,亦可使用為獲得與ArF準分子雷射或F2準分子雷射相同之波長而自氘(D2)燈等光源使光分光從而中心波長與ArF準分子雷射、F2準分子雷射相同之光。Further, in the above-described fourth embodiment, the case where the exposure light source is an ArF excimer laser has been described. However, if the wavelength is 200 nm or less, preferably light having a wavelength of 100 nm to 200 nm, the F2 excimer can also be used. Shoot. Further, it is also possible to use a light source such as a D2 lamp to obtain a wavelength similar to that of an ArF excimer laser or an F2 excimer laser, and to split the light so that the center wavelength is the same as that of the ArF excimer laser or the F2 excimer laser. Light.
又,於上述實施形態4中,已揭示使用黑白相機作為CCD相機23之示例,但亦可使用彩色相機作為CCD相機,接收玻璃基板10之內部缺陷及該內部缺陷以外之區域所發出之、較波長為200nm以上之曝光波長之光更長的波長的光而進行拍攝,電腦27按紅、綠、藍之顏色分類而對該CCD相機23之圖像進行圖像處理,並根據按該顏色分類進行圖像處理後之光的強度(光量)來檢測內部缺陷16。於此情形時,電腦27亦可根據按顏色分類進行圖像處理後之光之顏色或波長等之資訊而檢測內部缺陷。又,內部缺陷之檢測亦可於光罩基底用玻璃基板之製造步驟之最終階段實施。Further, in the above-described fourth embodiment, an example in which a monochrome camera is used as the CCD camera 23 has been disclosed, but a color camera may be used as a CCD camera to receive internal defects of the glass substrate 10 and regions other than the internal defects. The light having a wavelength longer than the exposure wavelength of 200 nm or longer is photographed, and the computer 27 sorts the images of the CCD camera 23 according to the colors of red, green, and blue, and sorts according to the color according to the color. The intensity (light amount) of the light after the image processing is performed to detect the internal defect 16. In this case, the computer 27 can also detect internal defects based on information such as the color or wavelength of the light after image processing by color classification. Further, the detection of the internal defects can be performed at the final stage of the manufacturing process of the glass substrate for the reticle base.
另外,於上述實施形態1中,已說明CCD相機23接收由玻璃基板10之內部缺陷及該內部缺陷以外之區域所發出之、較曝光波長之光更長之波長的光者,但亦可由分光器接收該等光,來測定內部缺陷之分光特性(波長及強度)、光15及17之強度(光量)分布,從而檢測內部缺陷。又,螢光之檢測亦可藉由檢查員之目視而進行。Further, in the above-described first embodiment, the CCD camera 23 has been described as receiving light having a longer wavelength than that of an internal defect of the glass substrate 10 and a region other than the internal defect, but may be split. The device receives the light to measure the spectral characteristics (wavelength and intensity) of the internal defects and the intensity (light amount) distribution of the light 15 and 17 to detect internal defects. Moreover, the detection of fluorescence can also be performed by visual inspection by an inspector.
又,於上述實施形態1中,已說明於光罩基底用玻璃基板上形成有半色調膜之半色調型移相光罩基底之情形,但並不限定於此。例如,亦可為於玻璃基板10上包含半色調膜且於該半色調膜上包含遮光膜之半色調型移相光罩基底、或於光罩基底用玻璃基板1上形成有遮光膜之所謂的二元型光罩基底。作為此情形時之遮光膜之構造,可列舉自基板側起積層遮光層、表面抗反射層之兩層積層構造、或進而於基板與遮光層之間添加有背面抗反射層之三層積層構造等。作為遮光膜中所使用之材料,首先可列舉以鉻為主成分之材料,為滿足背面抗反射層、遮光層、表面抗反射層所必需之特性,可分別使用以鉻為主成分並適度地經氧化、氮化、碳化等之材料。又,作為鉻以外之可適用於遮光膜之材料,例如可列舉含有鉬、鎢、鋯等過渡金屬及矽之過渡金屬矽化物,與鉻之情形同樣地,可使用以該過渡金屬矽化物為主成分並適度地經氧化、氮化、碳化等之材料。除此之外,亦可使用以鉭為主成分並適度地經氧化、氮化、碳化等之材料,從而形成兩層積層構造或者三層積層構造之遮光膜。再者,亦可於該等半色調型移相光罩基底、光罩基底之遮光膜上形成光阻膜。Further, in the first embodiment, the case of the halftone type phase shift mask substrate in which the halftone film is formed on the glass substrate for the mask base has been described, but the invention is not limited thereto. For example, a halftone type phase shift mask substrate including a halftone film on the glass substrate 10 and including a light shielding film on the halftone film, or a light shielding film formed on the glass substrate 1 for the mask base may be used. A binary reticle substrate. The structure of the light-shielding film in this case includes a two-layer laminated structure in which a light-shielding layer or a surface anti-reflection layer is laminated from the substrate side, or a three-layer laminated structure in which a back surface anti-reflection layer is further added between the substrate and the light-shielding layer. Wait. As a material used for the light-shielding film, firstly, a material containing chromium as a main component is used, and in order to satisfy the characteristics necessary for the back surface antireflection layer, the light shielding layer, and the surface antireflection layer, chromium may be used as a main component and moderately A material that is oxidized, nitrided, carbonized, and the like. Further, examples of the material which can be applied to the light-shielding film other than chromium include a transition metal containing a transition metal such as molybdenum, tungsten or zirconium, and a transition metal halide. In the same manner as in the case of chromium, the transition metal halide can be used. The main component is moderately oxidized, nitrided, carbonized, and the like. In addition, it is also possible to form a light-shielding film having a two-layer laminated structure or a three-layer laminated structure by using a material mainly composed of ruthenium, oxidized, nitrided, carbonized or the like as a main component. Furthermore, a photoresist film may be formed on the halftone phase shift mask base and the light shielding film of the mask base.
於實施形態5中,係僅藉由自端面13導入檢查光而檢查特定區域內螢光之有無,但藉由利用凹透鏡將檢查光源之大致平行的檢查光變成發散光,每單位面積之光強度將減少不少。為利用自端面13之一處所導入之檢查光(發散光)而檢查整個特定區域之螢光之有無,該檢查光至少需要可於與端面13相對向之端面14側之特定區域之邊界面D(參照圖12)處充分地檢測螢光之有無之光強度的大小。In the fifth embodiment, the presence or absence of fluorescence in a specific region is inspected only by introducing the inspection light from the end surface 13, but by using a concave lens, the substantially parallel inspection light of the inspection light source is converted into divergent light, and the light intensity per unit area is obtained. Will be reduced a lot. In order to check the presence or absence of the fluorescence of the entire specific region by using the inspection light (diverging light) introduced from one of the end faces 13, the inspection light needs at least the boundary surface D of a specific region on the side of the end face 14 opposite to the end face 13. (See Fig. 12) The size of the light intensity at which the presence or absence of fluorescence is sufficiently detected.
如上所述,藉由增強檢查光源之光強度自身,可提高端面14側之特定區域之邊界面D上之發散光的光強度。然而,此時,檢查光導入側的端面13側之基板內部之發散光的光強度必然會變大,因此根據所增強之檢查光源之光強度的大小,有可能對端面13側之基板內部造成損害。As described above, by enhancing the light intensity of the inspection light source itself, the light intensity of the divergent light on the boundary surface D of the specific region on the end face 14 side can be improved. However, at this time, the light intensity of the divergent light inside the substrate on the side of the end face 13 on the light introduction side is inevitably increased. Therefore, depending on the intensity of the light intensity of the enhanced inspection light source, it is possible to cause the inside of the substrate on the end face 13 side. damage.
該實施形態5係藉由不僅自端面13側、而且自端面14側亦導入檢查光之發散光來解決上述問題者。於該實施形態5中,如圖12所示,藉由通過將端面13與端面14之間的距離一分為二之主表面11、12上之中間地點C1、C2、且與端面13及端面14平行的中間面C,而將必需使檢查光抵達之特定區域一分為二。繼而,藉由自端面13側所導入之檢查光,最低限度地檢查被特定區域之端面13側之邊界面B、中間面C、兩主表面11、12側之邊界面E、F所包圍之區域之螢光的有無,並藉由自端面14側所導入之檢查光,而最低限度地檢查被特定區域之端面14側之邊界面D、中間面C、兩主表面11、12側之邊界面E、F所包圍之區域之螢光的有無。藉此,所導入之發散光只要可確保可至少於中間面C檢查螢光之有無之光強度即可,從而可抑制導入發散光之端面側之基板內部的損害。於此情形時,可以如下方式來設定檢查光之發散角度θc:若將導入至玻璃基板10內之發散光即檢查光L中之最外側之光線設為L1、L2,則該光線L1、L2落在特定區域之表面與背面兩主表面11、12側之各邊界面E、F的相交線Be、Bf、De、Df上。In the fifth embodiment, the above problem is solved by introducing divergent light of the inspection light from the end face 13 side and from the end face 14 side. In the fifth embodiment, as shown in FIG. 12, by dividing the distance between the end surface 13 and the end surface 14 into two intermediate portions C1, C2 on the main surfaces 11, 12, and the end surface 13 and the end surface 14 parallel intermediate faces C, and it will be necessary to divide the specific area in which the inspection light arrives into two. Then, by the inspection light introduced from the end surface 13 side, the boundary surface B on the end surface 13 side of the specific region, the intermediate surface C, and the boundary surfaces E and F on the side of the main surfaces 11 and 12 are inspected at least. The presence or absence of the fluorescent light in the area, and the inspection surface light introduced from the end surface 14 side, and the boundary surface D on the end surface 14 side of the specific region, the intermediate surface C, and the sides of the two main surfaces 11, 12 are inspected to the minimum. The presence or absence of fluorescence in the area surrounded by interfaces E and F. Thereby, the introduced divergent light can ensure the light intensity of the presence or absence of the fluorescent light at least at the intermediate surface C, and the damage inside the substrate on the end surface side to which the divergent light is introduced can be suppressed. In this case, the divergence angle θc of the inspection light can be set as follows: if the divergent light introduced into the glass substrate 10, that is, the outermost light in the inspection light L is L1 and L2, the light L1, L2 It falls on the intersection lines Be, Bf, De, Df of the boundary surfaces E and F on the surface of the specific area and the two main surfaces 11 and 12 on the back surface.
於該實施形態5中,在進行自端面13側導入檢查光之內部缺陷檢查之後,作為下一步驟即自端面14側導入檢查光時的方法,只要可改變將基板10設置於XYZ平台22上的方向以使端面13與端面14之位置調換即可。又,如圖11之虛線所示,亦可於端面14側亦以配置雷射照射裝置21及柱面透鏡28之方式進行對應。再者,於該實施形態2之情形時,最低限度必需對導入檢查光之兩個端面13、14進行鏡面研磨。其他光罩基底用玻璃基板之製造方法、光罩基底之製造方法及曝光用光罩之製造方法相關之事項與實施形態4之情形相同。In the fifth embodiment, after the internal defect inspection of the inspection light is introduced from the end surface 13 side, the method of introducing the inspection light from the end surface 14 side as the next step is performed, and the substrate 10 can be changed to be placed on the XYZ stage 22 as long as it can be changed. The direction is such that the positions of the end face 13 and the end face 14 are exchanged. Further, as shown by the broken line in FIG. 11, the laser irradiation device 21 and the cylindrical lens 28 may be disposed on the end surface 14 side. Further, in the case of the second embodiment, it is necessary to mirror-finish the two end faces 13 and 14 to which the inspection light is introduced. Other matters relating to the method for producing a glass substrate for a mask base, the method for producing a mask substrate, and the method for producing an exposure mask are the same as those in the fourth embodiment.
與實施形態5同樣地,該實施形態6係藉由不僅自端面13側、而且自端面14側導入檢查光之發散光,來解決因將檢查光導入至玻璃基板內所引起之損害的問題者,但該實施形態6與實施形態5之不同點在於:可將檢查光源之光強度設為與先前之利用平行光之內部缺陷檢查步驟之情形時大致同等的程度。In the same manner as in the fifth embodiment, the sixth embodiment introduces the divergence light of the inspection light from the end surface 13 side and the end surface 14 side, thereby solving the problem of damage caused by introducing the inspection light into the glass substrate. However, the sixth embodiment is different from the fifth embodiment in that the light intensity of the inspection light source can be made substantially equal to the case of the previous internal defect inspection step using parallel light.
於該實施形態6中,如圖13所示,藉由自端面13側所導入之檢查光,最低限度地檢查被中間面C、端面14側之邊界面D、兩主表面11、12側之邊界面E、F所包圍之區域之螢光的有無。並且,藉由自端面14側所導入之檢查光,最低限度地檢查被中間面C、端面13側之邊界面B、兩主表面11、12側之邊界面E、F所包圍之區域之螢光的有無。於此情形時,可以如下方式來設定檢查光之發散角度θc:若將導入至玻璃基板10內之發散光即檢查光L之中、最外側之光線設為L3、L4,則該光線L3、L4落在特定區域之表面與背面兩主表面11、12側之各邊界面E、F與中間面C的相交線Ce、Cf、De、Df上。藉此,與實施形態4、5之情形相比,可使發散角度θc相當小,且可將因發散而引起之檢查光之光強度的降低抑制在最低限度。藉此,可將檢查光源之光強度設為與先前之利用平行光之內部缺陷檢查步驟之情形大致同等的程度,從而可將因使檢查光導入至玻璃基板內而造成之損害抑制至與先前技術同等的程度。In the sixth embodiment, as shown in FIG. 13, the inspection surface light introduced from the end surface 13 side is used to inspect the boundary surface D on the intermediate surface C and the end surface 14 side, and the main surfaces 11 and 12 side at the minimum. The presence or absence of fluorescence of the area surrounded by the boundary surfaces E and F. Further, by the inspection light introduced from the end surface 14 side, the boundary surface B on the intermediate surface C and the end surface 13 side, and the area surrounded by the boundary surfaces E and F on the side of the main surfaces 11 and 12 are inspected at a minimum. The presence or absence of light. In this case, the divergence angle θc of the inspection light can be set as follows: when the light emitted to the outside of the inspection light L, which is the divergent light introduced into the glass substrate 10, is L3 or L4, the light L3, L4 falls on the intersection lines Ce, Cf, De, Df of the boundary surfaces E, F and the intermediate surface C on the surface of the specific region and the two main surfaces 11 and 12 on the back surface. As a result, the divergence angle θc can be made relatively small as compared with the case of the fourth and fifth embodiments, and the decrease in the light intensity of the inspection light due to the divergence can be minimized. Thereby, the light intensity of the inspection light source can be set to be substantially equal to the case of the previous internal defect inspection step using the parallel light, so that the damage caused by introducing the inspection light into the glass substrate can be suppressed to the previous The degree of technology is equal.
例如,於光罩基底用玻璃基板之製作完成時(研磨步驟結束後)之縱橫尺寸為約152mm×152mm×6.35mm、倒角量k為0.6mm之情形時,若將最低限度應使檢查光抵達之特定區域設為132mm×132mm×6.4mm,則發散角度θc為0.7°以上即可。For example, when the production of the glass substrate for the reticle base is completed (after the completion of the polishing step), the aspect ratio is about 152 mm × 152 mm × 6.35 mm, and the amount of chamfering k is 0.6 mm, the inspection light should be minimized. When the specific region to be reached is 132 mm × 132 mm × 6.4 mm, the divergence angle θc may be 0.7 or more.
於該實施形態6之內部缺陷檢查步驟之情形時,檢查光亦抵達至S3、S4、S5、S6之區域。由此,於該實施形態6之情形時,藉由略微提高檢查光源之光強度,可對基板10內之所有區域進行內部缺陷檢查。再者,其他光罩基底用玻璃基板之製造方法、光罩基底之製造方法及曝光用光罩之製造方法相關之事項與實施形態4之情形相同。In the case of the internal defect inspection step of the sixth embodiment, the inspection light also reaches the region of S3, S4, S5, and S6. Therefore, in the case of the sixth embodiment, the internal defect inspection can be performed on all the regions in the substrate 10 by slightly increasing the light intensity of the inspection light source. Further, the matters relating to the method for producing a glass substrate for a mask base, the method for producing a mask substrate, and the method for producing an exposure mask are the same as those in the fourth embodiment.
該實施形態7與實施形態4之不同點在於:並非於(3)光罩基底用玻璃基板之研磨步驟之前,而係於(4)光罩基底之製造步驟後進行檢查玻璃基板之內部缺陷之步驟即缺陷檢查步驟。The seventh embodiment differs from the fourth embodiment in that (3) before the polishing step of the glass substrate for the mask base, the internal defects of the glass substrate are inspected after the (4) manufacturing step of the mask substrate. The step is the defect inspection step.
藉由與(2)光罩基底用玻璃基板之內部缺陷檢查步驟相同之方法,對藉由(4)光罩基底之製造步驟所製造的光罩基底進行玻璃基板之內部缺陷檢查。光罩基底之玻璃基板之大小係以縱橫尺寸約為152mm×152mm×6.35mm、倒角量k為0.6mm為目標進行製造,若加入誤差而將最低限度應使檢查光抵達之特定區域設為132mm×132mm×6.4mm,則檢查光之發散角度θc為4.8°以上即可。又,若考慮到因增大藉由凹透鏡而發散之發散角度而導致之檢查光之光強度的降低、及增強檢查光源之光強度而對基板產生損害之危險性或成本方面等,則發散角度θc較好的是7.0°以下。The internal defect inspection of the glass substrate is performed on the photomask substrate manufactured by the (4) photomask substrate manufacturing step by the same method as (2) the internal defect inspection step of the photomask base glass substrate. The size of the glass substrate of the mask base is manufactured with a vertical and horizontal dimension of about 152 mm × 152 mm × 6.35 mm and a chamfering amount k of 0.6 mm. If an error is added, the specific area where the inspection light is to be reached should be set to a minimum. 132 mm × 132 mm × 6.4 mm, the divergence angle θc of the inspection light may be 4.8 or more. Further, the divergence angle is considered in consideration of the risk of damage to the substrate due to a decrease in the light intensity of the inspection light due to the divergence angle diverging by the concave lens, and the increase in the light intensity of the inspection light source. Θc is preferably 7.0 or less.
根據該實施形態7,可獲得與實施形態4之情形相同之效果。又,由於螢光會於基板主表面11與薄膜之界面反射,因此亦可獲得更容易識別螢光之有無的效果。再者,作為將檢查光導入至光罩基底之玻璃基板10內之導入方法,亦可如實施形態5所示,不僅自端面13側,而且自端面14側依序導入檢查光之發散光。另外,作為將檢查光導入至光罩基底之玻璃基板10內之方法,亦可如實施形態3所示,使用發散角度θc為0.7°以上之發散光之檢查光,自端面13側及自端面14側之兩方依序導入檢查光。According to the seventh embodiment, the same effects as those in the fourth embodiment can be obtained. Further, since the fluorescent light is reflected at the interface between the main surface 11 of the substrate and the film, the effect of more easily identifying the presence or absence of the fluorescence can be obtained. Further, as a method of introducing the inspection light into the glass substrate 10 of the reticle base, as shown in the fifth embodiment, the divergent light of the inspection light can be sequentially introduced from the end surface 13 side and from the end surface 14 side. Further, as a method of introducing the inspection light into the glass substrate 10 of the mask base, as in the third embodiment, the inspection light of the divergent light having a divergence angle θc of 0.7 or more may be used, from the end surface 13 side and the self-end surface. The two sides of the 14 side sequentially introduce inspection light.
亦可對藉由(5)曝光用光罩之製造步驟所製造之曝光用光罩,進行與對光罩基底所進行之情形相同的內部缺陷檢查。又,藉由照射檢查光而由內部缺陷所產生之螢光,根據檢查光之照射強度或內部缺陷之大小不同,其光量變化較大,因此若需要更確實地排除內部缺陷,亦可於未研磨之玻璃基板之階段、研磨並完成之光罩基底用玻璃基板之階段、光罩基底之階段、曝光用光罩之階段中之任意複數個階段或所有階段進行內部缺陷檢查。It is also possible to perform the same internal defect inspection as that performed on the mask substrate by the exposure mask manufactured by the (5) manufacturing step of the exposure mask. Further, the fluorescent light generated by the internal defect by the irradiation of the inspection light has a large change in the amount of light depending on the intensity of the inspection light or the internal defect, and therefore, if it is necessary to more reliably exclude the internal defect, The internal defect inspection is performed at any stage of the stage of grinding the glass substrate, the stage of polishing the glass substrate for the reticle substrate, the stage of the reticle substrate, and the stage of the exposure reticle.
以上,參照若干實施形態對本發明進行了說明,但本發明並不限定於上述實施形態。對於本發明之構成及具體內容,可於本發明之範圍內進行業者可理解之各種變更。The present invention has been described above with reference to a few embodiments, but the present invention is not limited to the above embodiments. Various changes that can be understood by those skilled in the art can be made within the scope of the invention.
該申請案係主張基於2009年1月9日提出申請之日本專利申請特願2009-4085以及2009年1月27日提出申請之日本專利申請特願2009-16026之優先權,且將其揭示之內容全部併入於本文。The priority of Japanese Patent Application No. 2009-4085, filed on Jan. 9, 2009, and Japanese Patent Application No. 2009-16026, filed on Jan. 27, 2009. The content is fully incorporated herein.
本發明可用於在製造超LSI(Large Scale Integration,大型積體電路)等時用作超微細圖案之轉印用光罩之曝光用光罩、用作該曝光用光罩之材料之光罩基底、以及用作該光罩基底之材料之光罩基底用玻璃基板的製造。The present invention can be used for an exposure mask which is used as a transfer mask for ultrafine patterns when manufacturing a super LSI (Large Scale Integration) or the like, and a mask base used as a material for the exposure mask. And the manufacture of a glass substrate for a reticle substrate used as a material of the reticle substrate.
10...光罩基底用玻璃基板10. . . Glass substrate for mask base
11、12...主表面(表面與背面)11,12. . . Main surface (surface and back)
13、14、15、16...端面13, 14, 15, 16. . . End face
13a、13b、14a、14b、15a、15b、16a、16b...倒角面13a, 13b, 14a, 14b, 15a, 15b, 16a, 16b. . . Chamfered surface
20...玻璃基板之缺陷檢查裝置20. . . Glass substrate defect inspection device
21...雷射裝置twenty one. . . Laser device
22...XYZ平台twenty two. . . XYZ platform
23...CCD相機twenty three. . . CCD camera
27...電腦27. . . computer
28...凹透鏡(柱面透鏡)28. . . Concave lens
B、D、E、F、H、J...邊界面B, D, E, F, H, J. . . Boundary surface
Be、Bf、Bj、De、Df、Dh...相交線Be, Bf, Bj, De, Df, Dh. . . Intersection line
C...中間面C. . . Intermediate face
C1、C2...中間地點C1, C2. . . Intermediate location
L...檢查光L. . . Check light
L1~L6...光線L1~L6. . . Light
θg...傾斜角度Θg. . . slope
圖1係先前之光罩基底用玻璃基板之缺陷檢查方法之說明圖;1 is an explanatory view of a defect inspection method of a glass substrate for a reticle base;
圖2係圖1中之玻璃基板之立體圖;Figure 2 is a perspective view of the glass substrate of Figure 1;
圖3係關於本發明之實施形態1之光罩基底用玻璃基板之製造方法中之缺陷檢查步驟的說明圖;3 is an explanatory view showing a defect inspection step in the method of manufacturing a glass substrate for a mask base according to Embodiment 1 of the present invention;
圖4係圖3之A部放大圖;Figure 4 is an enlarged view of a portion A of Figure 3;
圖5係表示用以實施本發明之實施形態1之光罩基底用玻璃基板之製造方法中之缺陷檢查步驟之裝置構成的圖;FIG. 5 is a view showing a configuration of a device for performing a defect inspection step in a method of manufacturing a glass substrate for a reticle base according to Embodiment 1 of the present invention;
圖6(A)、(B)係缺陷檢測之說明圖;6(A) and (B) are explanatory diagrams of defect detection;
圖7係關於本發明之實施形態2之光罩基底用玻璃基板之製造方法中之缺陷檢查步驟的說明圖;Fig. 7 is an explanatory view showing a defect inspection step in a method of manufacturing a glass substrate for a mask base according to Embodiment 2 of the present invention;
圖8係關於本發明之實施形態4之光罩基底用玻璃基板之缺陷檢查步驟的說明圖;FIG. 8 is an explanatory view showing a defect inspection step of the glass substrate for a reticle base according to Embodiment 4 of the present invention; FIG.
圖9係圖8之A部放大圖;Figure 9 is an enlarged view of a portion A of Figure 8;
圖10係發散角θc之說明圖;Figure 10 is an explanatory diagram of a divergence angle θc;
圖11係表示用以實施本發明之實施形態4之光罩基底用玻璃基板之缺陷檢查步驟之裝置構成的圖;Figure 11 is a view showing the configuration of a device for performing a defect inspection step of a glass substrate for a reticle base according to Embodiment 4 of the present invention;
圖12係關於本發明之實施形態5之光罩基底用玻璃基板之缺陷檢查步驟的說明圖;及Figure 12 is an explanatory view showing a defect inspection step of the glass substrate for a reticle base according to Embodiment 5 of the present invention; and
圖13係關於本發明之實施形態6之光罩基底用玻璃基板之缺陷檢查步驟的說明圖。Fig. 13 is an explanatory view showing a defect inspection step of the glass substrate for a mask base according to the sixth embodiment of the present invention.
10...光罩基底用玻璃基板10. . . Glass substrate for mask base
11、12...主表面(表面背面)11,12. . . Main surface (back surface)
13、14...端面13, 14. . . End face
13a、13b、14a、14b...倒角面13a, 13b, 14a, 14b. . . Chamfered surface
B、D、E、F、H、J...邊界面B, D, E, F, H, J. . . Boundary surface
Be、Bf、Bj、De、Df、Dh...相交線Be, Bf, Bj, De, Df, Dh. . . Intersection line
C...中間面C. . . Intermediate face
C1、C2...中間地點C1, C2. . . Intermediate location
L...檢查光L. . . Check light
L1~L6...光線L1~L6. . . Light
θg...傾斜角度Θg. . . slope
Claims (23)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009004085A JP5090379B2 (en) | 2009-01-09 | 2009-01-09 | Manufacturing method of glass substrate for mask blank, manufacturing method of mask blank, and manufacturing method of photomask for exposure |
| JP2009016026A JP5028437B2 (en) | 2009-01-27 | 2009-01-27 | Manufacturing method of glass substrate for mask blank, manufacturing method of mask blank, and manufacturing method of photomask for exposure |
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| TW201104351A TW201104351A (en) | 2011-02-01 |
| TWI461831B true TWI461831B (en) | 2014-11-21 |
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| KR (1) | KR101692087B1 (en) |
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| JP5651032B2 (en) * | 2011-02-03 | 2015-01-07 | Hoya株式会社 | Mask blank glass substrate manufacturing method, mask blank manufacturing method, transfer mask manufacturing method, and semiconductor device manufacturing method |
| US9341940B2 (en) | 2014-05-15 | 2016-05-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Reticle and method of fabricating the same |
| JP6394544B2 (en) | 2015-09-04 | 2018-09-26 | 信越化学工業株式会社 | Photomask blank defect inspection method, sorting method, and manufacturing method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63165738A (en) * | 1986-12-27 | 1988-07-09 | Dainippon Printing Co Ltd | Defect inspection equipment for transparent substrates |
| TW200624999A (en) * | 2004-11-08 | 2006-07-16 | Hoya Corp | Method of producing a mask blank |
| JP2007086050A (en) * | 2005-02-18 | 2007-04-05 | Hoya Corp | Method for inspecting translucent article made of translucent material, method and apparatus for inspecting defect of glass substrate, glass substrate for mask blank, and manufacturing method therefor, mask bland and manufacturing method therefor, mask for exposure and manufacturing method therefor, and manufacturing method of semiconductor device |
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| JP3673626B2 (en) * | 1997-10-24 | 2005-07-20 | Hoya株式会社 | Non-uniformity inspection method and apparatus for translucent material |
| WO2006088041A1 (en) * | 2005-02-18 | 2006-08-24 | Hoya Corporation | Light-transmitting object examining method |
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2010
- 2010-01-05 KR KR1020117018467A patent/KR101692087B1/en not_active Expired - Fee Related
- 2010-01-05 WO PCT/JP2010/050010 patent/WO2010079771A1/en not_active Ceased
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63165738A (en) * | 1986-12-27 | 1988-07-09 | Dainippon Printing Co Ltd | Defect inspection equipment for transparent substrates |
| TW200624999A (en) * | 2004-11-08 | 2006-07-16 | Hoya Corp | Method of producing a mask blank |
| JP2007086050A (en) * | 2005-02-18 | 2007-04-05 | Hoya Corp | Method for inspecting translucent article made of translucent material, method and apparatus for inspecting defect of glass substrate, glass substrate for mask blank, and manufacturing method therefor, mask bland and manufacturing method therefor, mask for exposure and manufacturing method therefor, and manufacturing method of semiconductor device |
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| WO2010079771A1 (en) | 2010-07-15 |
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