TWI460763B - An apparatus and method for modifying an object device - Google Patents

Description

Apparatus and method for modifying objects

The present invention is generally directed to material changes having a relatively high degree of volume and positional accuracy. In particular, the present invention relates to the removal and addition of materials from substrates and workpieces, wherein the workpieces are used in the semiconductor industry, such as semiconductor wafers and reticle corrections, which are used in lithography processes, semiconductors. Established with micron and nanostructures. The present invention allows the substrate to be modified to have nanometer position accuracy over a range of nanometer sizes and with respect to surface and surface features.

Sometimes it is necessary to create small holes in the correction and fabrication of wafers, semiconductor dies, reticle and flat display/microdisplay elements used in the semiconductor industry and other industries, and in modifying the defects used in semiconductor processing. Unlike other shapes, the holes and other shapes are quite deep relative to their diameter. Sometimes it is also necessary to create small holes and shapes that have high positional accuracy with respect to other component features. Regarding holes, aspect ration holes are difficult to establish. It must be noted that the ratio of depth to width is the so-called aspect ratio.

Attempts to overcome the difficulties of high aspect ratio structures are quite unsuccessful. In general, these solutions use particle beams (eg, ion beams, electron beams, or laser beams) to drill material from the sample. A method of using an ion beam for this purpose is disclosed, for example, in U.S. Patent No. 6,403,388, issued to toS. Such a particle beam device is also used to deposit material onto the sample by introducing a gas into the particle beam. However, these solutions have significant deficiencies.

U.S. Patent No. 6,827,979 to Mirkin et al., U.S. Patent No. 6,635,311, U.S. Patent Application Serial No. 10/499,685, U.S. Patent Application Serial No. 10/442,188, U.S. Patent Application Serial No. 10/465,794, U.S. Patent Application Serial No. No. 10/301,843, U.S. Patent Application Serial No. 10/261,663 teaches the use of a scanning probe microscope to add material to a small-sized article. These teachings show the chemical techniques that act as a mechanism to add processes. These teachings do not include the use of electromagnetic, particle beam or gas materials to activate the additive material. The use of the activation means described herein by the Applicant and the apparatus have produced substantially more functions in the Applicant's invention.

U.S. Patent No. 6,737,646 and U.S. Patent No. 6,674,074, issued to to-S. The invention further teaches a chamber for containing a gas. However, this invention has a significant lack of that the coating or material is not activated by an energy device. By including an energy device, the time to add material to the object will be significantly reduced.

When an ion beam is used in an attempt to remove material, the ions themselves can be buried in the sample or component to different depths. As a result, the component can become useless because the nature of the component can be altered by the presence of buried ions. Introducing a gas to an ion beam also adds additional challenges to limiting and selecting the appropriate gas within the ion beam chamber.

With the electron beam, if the sample begins to develop an electric charge, it becomes difficult to control the position of the electron beam. This phenomenon occurs when an electron beam strikes the surface of a non-conductive or poorly conductive substrate. Therefore, the accuracy of the method becomes an important consideration for the end user. The use of such an electron beam can cause uncontrolled damage that can render the target component unusable. Introducing gas to an electron beam also adds additional challenges to limiting and selecting the appropriate gas within the ion beam chamber.

With laser light, the hole size can be limited by the amount of focus that can be achieved. In the case where the material correction is less than the nominal focus, the material depth and aspect ratio are limited. Laser light becomes a solution with an application-limited part because of the limitation of the wavelength of the focused beam.

In addition, physical access to substrate features is also required in semiconductor processing and evaluation. A small diameter hole or a small area for a non-circular hole is preferred to avoid damaging or damaging features in the element adjacent to the hole. None of the conventional solutions can achieve a certain degree of accuracy and accuracy.

Therefore, there is a need for a technique capable of correcting a sample (e.g., a semiconductor) with high positional accuracy and volume control. It is also desirable to be able to modify the semiconductor or target components to add the materials needed by the end user. It is also desirable to be able to remove different classes of material without greatly affecting adjacent areas. The combination of high aspect ratio features and high positional accuracy limits the impact on adjacent areas.

The present invention satisfies the foregoing needs, wherein in one aspect, a device is provided in some embodiments to modify an article (e.g., a semiconductor component) to remove or add material. The present invention accomplishes this task by placing a reactant on the component to be modified, and applying the reactant to a type of energy such that the reactant can modify the surface as desired. Depending on the composition of the element, the reactant is uniquely selected for this desired task. The energy patterns mentioned in various embodiments of the invention may be energy of light energy, sound energy, or thermal type. Alternatively, the energy can be particle beam energy, such as electrons, ions, or other atomic particles. The reactants can be activated by injecting a gas into the area surrounding the reactants.

The reactants selected depend on whether the material must be removed from the sample or whether it is necessary to add material to the sample. Typically, the precise placement of the reactants is accomplished using a scanning probe microscope. A scanning probe microscope is a type of microscope that uses a probe assembly that includes at least one very fine tip on the probe. The probe assembly is guided in the X, Y and Z directions using a very precise positioning mechanism. Typically, these microscopes utilize a specific interaction between the probe and the surface of the sample. For example, a scanning tunneling microscope places a small bias between the tip of the probe and the sample. The microscope then detects the current flowing from the tip to the sample. Another type of scanning probe microscope is a scanning force microscope. The microscope utilizes a very sharp tip on the probe assembly. The tip is placed on a cantilever beam. The skew of the cantilever beam is monitored, where the deflection is caused by the attraction or repulsive force between the atoms acting at the tip. The invention described herein typically exhibits a scanning force microscope, but other versions of the scanning probe microscope can perform equally well in many of the embodiments described herein.

According to an embodiment of the invention, a method for modifying an object includes: positioning a reactant on a sample or an object; and directing an energy to the reactant, wherein the energy is used to activate the reaction The object thus enables it to correct the sample or object. The reactants are selected or selected based on the composition of the sample. The sample can be corrected by removing material or adding material.

In accordance with another embodiment of the present invention, an apparatus for modifying an object includes: a reactant positioned on the object; and an energy element for directing its output to the reactant to correct The object. This embodiment can include an assembly for positioning the reactants on the article.

According to still another embodiment of the present invention, a product produced by modifying a process of a sample, the process comprising: positioning a reactant on a sample; and directing an energy source to the reactant, wherein the energy The reactants were configured to modify the sample. The sample was corrected by removing material or adding material.

In yet another embodiment of the invention, when the reactant is in a fluid state, the reactant can be delivered to the surface of the sample by directing or forcing the fluid reactant through a passage formed in the cantilever beam and the tip assembly. U.S. Patent No. 6,337,479 and U.S. Patent No. 6,353,219, the disclosure of which is incorporated herein by reference in its entirety in its entirety in the the the the the the the the the For reference.

Specific embodiments of the invention have been described herein in order to provide a Of course, additional embodiments of the invention will be described hereinafter which will form the subject of the subject matter of the appended claims.

In this regard, it is to be understood that the invention is not to be construed as limited The present invention includes embodiments that are described and described in various ways. Also, it is to be understood that the phraseology and terminology used herein are for the purpose of description and should not be construed as limiting.

It will be appreciated by those skilled in the art that the present invention may be utilized as a basis for the design of other structures, methods and systems to implement some of the objects of the present invention. Therefore, it is important that the scope of the patent application be construed as including such equivalent structures, as they do not depart from the spirit and scope of the invention.

Referring to the drawings (wherein like reference numerals refer to like elements), the invention will be described below. According to one embodiment of the invention, a small amount of liquid (e.g., a chemical or a particulate of a solid material) is used as a reactant to modify the surface of an article. Typically, the liquid is low or the particles are placed on the sample via a probe having a small pointed tip.

1A is a diagram showing an embodiment of the apparatus and method of the present invention showing a scanning probe microscope probe assembly having a reduced amount of reactant on a probe tip above the surface of a target member. In this figure, a scanning probe microscope probe assembly 10 includes a probe control rod 12 and a probe tip 14. In the preferred embodiment, the scanning probe microscope probe assembly is used to accurately and accurately place a reactant 16 onto a target component surface 18. To this end, reactant 16 (in this case a reduced or removed reactant) is placed or positioned on probe tip 14. Once the reactant 16 is placed over the probe tip 14, the probe tip 14 and the attached reactant 16 are then moved over the desired location of the component surface 18 and into that position.

The probe tip 14 can be of a type used in a probe microscope. Using a probe microscope element, such a probe can be accurately positioned over the sample. In this manner, reactant 16 is placed on target surface 18 of the sample with a high degree of accuracy relative to surface or surface features (e.g., to the nanometer range). In the preferred embodiment, reactant 16 can range between 1 square nanometer and 60 square nanometers or greater.

1B shows a scanning probe microscope probe assembly 10 having a reactant amount (decremented) on the probe tip 14 adjacent to the target member such that the reactant wets to the surface of the target member surface 18. In a preferred embodiment of the invention, reactant 16 is substantially in a liquid form. When reactant 16 is delivered to target component surface 18 or substrate, surface forces (i.e., surface tension and adhesion) are relied upon to attach reactant 16 to the probe tip of a scanning force microscope. When reactant 16 is sufficiently close to surface 18, reactant 16 will transfer to surface 18 via capillary action. In this case, the tip material and reactant are selected from the group of materials and reactants at which the tip material is at least partially hydrophilic to the reactant 16. Moreover, in this case, the substrate material can be hydrophilic to facilitate transfer of reactant 16 from the tip 14 to the substrate. In this embodiment, the choice of tip material and reactant 16 is such that tip 14 does not chemically react with reactant 16. In a subsequent embodiment, the tip material and reactants can be selected such that a mild or possibly strong reaction occurs between the tip 14 and the reactant 16.

In an alternative embodiment of the invention shown in Figures 8 and 9, the probe tip 14 can contain a reactant or a component of the reactant. This can be achieved by coating the tip 60 prior to use. In this case, the tip is likely to become consumable during this process. Transferring the reactants from the tip 60 is by contacting the coated tip to the surface (see Figure 8B) which will position the reactant 62 (the portion of the coating) (see Figure 8C). . Transfer can also be achieved by dipping the coated tip into another component of the reactant or by dipping into a solvent to dissolve a portion of the coating. This process promotes the transfer of the coated tip reactant 74 to the surface of the substrate. Again, in these embodiments, electromagnetic energy (EM) energy is directed to the material being transferred to the substrate to change the material being transferred to its final desired shape. For this embodiment, it is possible for the tip itself to be made of reactant material rather than coating. It must be noted that Figures 8 and 9 are described in additional detail herein.

In an alternative embodiment of the invention, the transfer of reactants 16 to the tip and from the tip transfer reactant 16 can also be facilitated by establishing a charge on the probe tip 14 and/or substrate. In this embodiment, reactant 16 is attracted to the substrate by electrostatic forces and one of the sacrificial tips is transferred to the substrate as the reactants are transferred. In a subsequent step, the electromagnetic energy is directed to the material being transferred and the transferred material is changed to its final state.

Figure 1C shows the target element surface 18 with a reduced amount of reactant on the surface 18 to which a beam of light is directed. In the preferred embodiment, the beam of light includes an electromagnetic source 20 from which an electromagnetic beam 22 is emitted.

In accordance with a preferred embodiment of the present invention, after placement of reactant 16 onto component surface 18, electromagnetic energy (typically derived from a laser) is directed to the surface of the sample on which reactant 16 is placed. The degree of electromagnetic energy is set such that the energy is sufficient to activate the chemical in the reactant 16 causing the chemical to etch the surface of the sample to leave a recess of the size of the droplet or particle. By repeatedly applying the reactant 16 and electromagnetic energy, the recess can be deepened until a predetermined depth or a detected depth is reached without increasing the diameter or surface area of the recess, thereby establishing a high aspect ratio. Hole. It is desirable to relabel the tip relative to the surface or surface features during a repetitive process. For example, it is desirable to confirm the removal depth to achieve a definitive final depth. In this case, the tip can be cleaned prior to confirming the position so that residual reactants are not placed and will be positioned on the surface. One method of cleaning residual chemicals from the tip is to immerse the tip in a reactant solvent that does not substantially affect the tip material.

Figure 1D shows the target element surface 18 having a recess 24 which is the result of activation of the reduced amount of reactant 16 on the surface by the beam 22. In this case, the user wishes to remove material that was inadvertently created or established during the manufacturing process. If the material is a semiconductor component, the material may be an improper connection that would render the component inoperable. However, with the present invention, it is possible to repair very small or fine features on a semiconductor element. In many cases, the features are so small that there are no other suitable ways to remove or reconstruct the features. With the present invention, these features can be modified in a substantially more precise manner and in part time.

Figure 2A shows a scanning probe microscope probe assembly 10 having incremental reactants on the probe tip 14 above the surface of a target member surface 18. The process of creating additional material on a target component material is similar to the process of removing the material.

After the incremental reactant 26 is on the probe tip 14, the scanning probe microscope probe assembly 10 places or positions the incremental reactant 26 adjacent to the target member surface 18 to wet the reactants. The surface of the surface of the target component is shown in Figure 2B. In the preferred embodiment, the location to which the material is added is known to the user in advance. Once the user wishes to add material to a surface, the incremental reactants associated with the problem being sought are selected. After the delta reactant 26 is selected, the scanning probe microscope assembly 10 is moved from a position (e.g., from a container) to the target component surface 18 via the probe tip 14. If the tip portion of the tip material reacts with the reactant 16, the tip may also partially dissolve into the reactant prior to transferring the reactant to the substrate. One portion of the tip (i.e., the sacrificial tip) may dissolve into the liquid reactant, causing the dissolved portion to cause accumulation of residue 28.

Figure 2C shows the target element surface 18 with an amount of reactant 26 on the surface and the beam system directed to the reactant 26. Once the probe tip 14 places or positions the incremental reactant 26 on the target element surface 18, the incremental reactant 26 is applied with the electromagnetic beam 22, causing it to begin reacting and begin to form incremental material on the target. On the surface of the target element 18.

Figure 2D shows the target component surface 18 on which a projection is formed. The bumps of the residue 28 are created because the electromagnetic beam 22 activates the incremental reactant 26 on the surface. Once the residue 28 is established, the technician can create or add incremental reaction materials if desired, or remove all or part of the residue 28 via the method described in Figures 1A-1D.

After being activated by electromagnetic energy, the droplets or particles leave a residue 28 on the element. Residue 28 can be used as a conductor or an insulator. If the component is a reticle, the residue can be used as an absorber of light.

Typically, source electromagnetic beam 22 is a laser, incoherent source, or in an alternative embodiment a high frequency radio wave. In some applications, a laser or electromagnetic source capable of being adjusted over a range of wavelengths is desirable. By this laser, the wavelength is adjusted to amplify the reactant to a state where it will etch or remove a small area of material on the material sample, or to amplify the reactant to a state that will accelerate the rate of material removal.

There are two mechanisms used to remove material from the component or deposit material on the component. The first, which is a preferred embodiment, is a photo-thermal reaction. In this mechanism, the reactants are excited by electromagnetic energy to cause an increase in the heat of the reactants. This increase in heat causes the reactants to etch more quickly. Alternatively, with this helium-thermal reaction, the reactants will change to a solid residue that acts as a conductor, insulator or non-penetrating layer. The degree of electromagnetic energy is chosen to intensify the reactants to such an extent that it increases the rate of reaction without melting the component material.

The composition of reactant 16 can be selected such that it enters an intensified state that is sufficient to remove material from the component at the selected location without affecting the material surrounding the location.

Alternatively, the composition of reactant 26 can be selected to deposit a residue that exhibits the desired properties, and, again, the intensification can be selected to change reactant 26 to a residue without altering the component material.

In an alternative embodiment, the second mechanism for removing or depositing material is accomplished by a photochemical effect. In this mechanism, the reactant system is excited to change its chemical nature or composition. In one example, reactant 16 can be altered by an energy source into an alternative material that will chemically react with the component material. In another example, reactant 26 can be altered in shape (e.g., from a liquid state to a solid state) by activating one of the catalysts in the reactant mixture, wherein the activation system causes the reactant material to cause a chemical change. In this way, a conductive or insulating material can be added to the component material. This compositional change can also be achieved by altering the optical penetration of the reactants (e.g., by partial or complete non-penetration by penetration). Again, the degree and/or wavelength of electromagnetic energy can be selected to the extent that the reactants can be excited to induce a chemical reaction without directly affecting the material of the component. In the case where the electromagnetic energy is light, an adjustable laser or other source can be used. The wavelength of the adjustable source can then be adjusted to allow the reaction to proceed at an acceptable rate.

By selecting different reactants, the sample material can be removed without interfering with the surrounding or underlying different types of sample material. In addition, the materials can be selected such that certain types of laminate materials have a level that terminates the etching process. Thus, one of the target elements, the so-called "etch stop" layer, can be part of the process. The layer is composed of a material that does not significantly react with the etching solution or solid, and the etching material and the energizing energy system react with the first level of the touch, but when it reaches the etch stop layer The etching process will stop or substantially decelerate.

Typical materials that can be used in the present invention are listed below:

These listings are not all inclusive, but are representative of the elements, oxides and metals used in the tip and substrate, and hydroxides, acids and compounds used in the reactants.

An example of the invention removes material from the surface of an element, such as a crucible. It has been found that the reactants from which ruthenium can be removed are potassium hydroxide and sodium hydroxide. In the present invention, the probe tip 14 of a scanning probe microscope assembly 10 takes the amount of a reactant (potassium hydroxide) from a source which is then placed in the desired position. Once placed in position, the amount of potassium hydroxide on the surface is applied with electromagnetic energy, which in this example is a concentrated argon ion laser having a laser power of about 1.5 watts. Once applied with an electromagnetic laser, the removal of the material is substantially confined by the probe tip 14 at the location of the potassium hydroxide.

I have found that sodium nitrate is generally used as an effective removal reactant for metals. Phosphoric acid, sulfuric acid and potassium hydroxide are used as effective removal reactants for stainless steel and titanium.

FIG. 3A shows a scanning probe microscope probe assembly 10 depicting the amount of reactants from a reactant pool 30 in which the reactant tool 30 is held in a reactant vessel 32. Figure 3B shows the probe tip 14 carrying a reactant amount. In this embodiment, surface reactants are utilized to adhere the reactants from reactant container 32 to the probe tip of a scanning force microscope assembly 10 when reactant 16 is to be delivered to target surface 18 or substrate. 14. The tip material and reactant 16 are selected from the group of materials and reactants wherein the tip material is at least partially hydrophilic to the reactants. Moreover, the substrate material can be hydrophilic to assist in transferring the reactants from the tip to the substrate.

The tip 14 can be coated with a hydrophobic insulator 33 and still attract the reactant 30. In this method, the tip 14 can be charged opposite to the charge placed on the reactant 30. When the difference in charge is sufficiently large, there will be sufficient force to overcome adhesion and gravity while the reactant 30 will be attracted to the tip 14. The reactant 30 can then be passed to the sample 18. The insulator 33 avoids the dissipation of charge between the reactant 30 and the tip 14. When tip 14 is near sample 18, the difference in charge between reactant 30 and tip 14 is neutralized, and the hydrophobic nature of the insulator drives reactant 30 to sample 18. In this embodiment, reactant 30 can be a solid or a liquid.

In an alternative embodiment, the tip 14 is coated with or consists of one of the reactants or reactants 34. The reactant 34 can then be transferred to the surface via direct contact of the tip 14 to the surface of the element, as shown in Figure 8C. The tip 14 can also be placed into a liquid in a manner similar to the transfer of liquid reactants to complete the reactant mixture or aid in the transfer of the reactants. In this embodiment, one portion of the tip coating is dissolved in the liquid (as shown in Figure 9A) and the resulting reactants are transferred to the substrate. In this embodiment, the tip must be replaced more frequently to effectively transfer the reactant 34.

In an alternative embodiment of the invention, transfer of reactant 16 to the tip and transfer of reactant 16 from the tip can also be facilitated by establishing a charge on the tip and/or substrate. Moreover, in this embodiment, one portion of the sacrificial tip is transferred to the substrate. Thereafter, the electromagnetic energy is directed to the transferred material and the transferred material changes to its final state.

Figure 4A shows a scanning probe microscope assembly 10 with a probe tip 14 that deposits a reduced amount of reactant 36 onto a surface. In this figure, reactant 36 is deposited within recess 37, wherein the recess 37 was previously established prior to the application of previous reactant 34. Figure 4A includes a target element 38 that includes multiple layers of different materials. These multiple layers are the first component layer 40 and the second component layer 42.

As shown in Figure 4A, the recesses in material 37 can also be created by an alternative method prior to the process of using reactants for additional material removal. For example, the recess 37 can be established during the process for creating the component. The recess 37 can also be created by directly touching the scanning probe tip 14 to the surface contact. Other ways of creating the recesses 37 or recesses include the use of ion beams or laser beams. Pre-defined depressions can be used during placement to help guide the reactants to the desired location. This location can also help limit the reactants to the desired location during the removal or addition process. Furthermore, the recesses predefined during the manufacture of the component may have high positional accuracy with respect to other non-accessible structures in the component.

In Figure 4A, the reduced amount of reactant 36 is repeatedly applied to achieve a clear connection to the second element level 42. Due to the thickness of the first component level 40, a reduced amount of reactant 36 needs to be applied multiple times to achieve this goal.

Similar to Figures 1A-1D, once the reduced reactant 36 is positioned on the surface (established as a depression in this figure), the electromagnetic energy and the generated electromagnetic beam are concentrated in the reduced reactant 36 (as in Figure 4B). Show) to remove additional material from the first component layer 40.

Figure 5A shows a scanning probe microscope assembly 10 that positions reactants into a surface recess 48. In this embodiment, the technician attempts to create additional material on the surface previously created by the application of the reduced reactant 16.

The target element 38 of Figure 5A is as in Figures 4A-4C. As previously mentioned, the target includes a first component layer 40 and a second component layer 42. After the material has been removed (as shown in Figures 4A-4C), the technician must now complete the connection.

Figure 5B shows an electromagnetic source that directs an energy beam 22 to the incremental reactant 50. By applying the incremental reactant 50 to the energy beam 22, a more rapid chemical reaction of the incremental reactant 50 to the target surface can be caused.

Figure 5C depicts the result of application of an energy beam to the incremental reactant 50. The energy beam causes the reactants to create a residue 52 which partially fills the holes 54. A layer of material can now be created by applying an incremental reactant 50 to the top of a termination layer 55.

The 5D image shows the resulting filled void 54 created by the application of the incremental reactant 50. In this particular example, the incremental reactant 50 can be established to connect to one of the other items on the target element. For example, if the target component is a semiconductor, filling the cavity 54 with the incremental reactant 50 can connect a transistor to another transistor.

It will be apparent from the present invention that an unlimited number of repairs or modifications can be made to a component. In order to establish the connection depicted in Figure 5D, it is generally necessary to completely build a new component. Through the present invention, a company can modify the surface only by utilizing the techniques disclosed herein to reuse or edit the components.

Figure 6A shows a multi-level component. In this figure, there are four levels, namely a first element layer 40, a second element layer 42, a third element layer 56 and a fourth element layer 58. The four levels 40, 42, 56, and 58 are cerium oxide, cerium, cerium oxide, and cerium, respectively.

FIG. 6B illustrates a hole 59 that penetrates the first component layer 40, the second component layer 42, and the third component layer 56. In this figure, the holes 59 are filled with a non-conductive plug 60. To establish a path through the first component layer 40, a reactant (e.g., hydrofluoric acid buffer solution) is placed on the layer by scanning the probe microscope assembly 10. Once positioned, an energy beam 22 is concentrated in the reactants to etch or remove the ceria material.

The hydrofluoric acid buffer solution is not necessarily effective on the second element layer 42 (矽). Thus, the hierarchy acts as a termination layer and reactant excavation or etching into the second component layer 42 can be avoided.

If the second component layer 42 is used as a termination layer, another reactant is selected to continue the etching process to penetrate the component. For the second component layer 42 (矽), the reactant that effectively removes the material is sodium hydroxide. Like the first component layer 40, the reactants are applied with an energy beam 22 to remove material. The process continues until the necessary material is removed to reach the third component layer 56 (cerium oxide). To remove the material of the third component layer 56, the process is repeated as the first component layer 40 with a hydrofluoric acid buffer solution as the removal reactant for the cerium oxide.

After the necessary material has been removed through all of these levels, a reactant is added to create a non-conductive residue 60. The non-conductive residue 60 of Figure 6B is established to establish an insulator for use in a subsequently established conductive plug.

Figure 6C shows that the holes created in the insulator 60 are filled with a conductive residue 61. The way the element builds up the residue is as in Figures 5A-5D. In this figure, the connection is made by the fourth component layer 58 (矽) up through the third component layer 52, the second component layer 42 and the first component layer 40 to form a direct connection. The residue 61 is then placed across the upper surface of the first component layer 40 and placed over its desired connection.

Figure 7 shows that an opposite charge can be placed on tip 14 and reactant 26 and substrate 18. This causes reactant 26 to be attracted to substrate 18. After placing the charge on tip 14 and sample 18, probe 10 with reactant 26 moves toward sample 18. When the distance between reactant 26 and sample 18 is sufficiently small, the Coulomb force will become greater than the surface force of holding reactant 26 to tip 14. At this distance, reactant 26 will separate from tip 14 and move to sample 18.

FIG. 8A depicts a reactive coating 62 positioned on the probe tip 14, wherein the probe tip 14 is part of the probe assembly 10. This figure depicts the probe assembly 10 prior to approaching the sample surface 18.

Figure 8B depicts the probe tip 14 with a reactive coating 62. Moreover, the figure depicts the cantilever beam 10 descending the tip 14 to the sample surface 18.

Figure 8C depicts the situation when the probe tip 14 is raised by the sample surface 18. As depicted in the figure, once the probe tip 15 is removed, an amount of coating 63 remains on the surface 18. The residual coating 63 becomes a reactant that will subsequently be activated.

Figure 9A depicts the coated tip 14 further comprising a reactant 16 having a small amount or a droplet. In this embodiment, reactant 16 has reacted with coating 62 to form a second reactant 64, as shown in Figure 9B. This mixture is produced when filthy droplets are delivered from the reactant source to the surface.

During the transfer of the reactants, in most cases, the second reactant contains the dissolved portion of the coating 62. Once transferred to the desired area, the second reactant 64 is placed on both the sample surface 18.

FIG. 10A shows a probe assembly 10 that includes a cantilever beam 66 and a tip 68, wherein the cantilever beam 66 has an internal passage 70 with the tip end 68. In this figure, internal channel 70 is depicted as a dashed line.

Channel 70 delivers a fluid reactant 72 through passage 70 to tip 68 to prepare for delivery of fluid reactant 72 to sample surface 18. As shown in FIG. 10C, after the reactant 72 is placed on the sample surface 18, the laser 20 activates the fluid reactant 72 droplets. Depending on the type of reactant 72 selected, one portion of the sample 18 is removed or one of the residues on the sample 18 will remain, as depicted and described in Figures 1A-1D and 2A-2D.

Figure 11A is a top view of a substrate. This figure illustrates how a particular shape can be created in accordance with an embodiment of the present invention. In more detail, the figure shows the creation of an approximately square hole in the surface of the sample 18. A plurality of reactant droplets 16 are placed on the sample 18 by a tip (not shown). As shown in FIG. 11B, the electromagnetic energy source 20 can activate one droplet at a time, or activate all of the droplets (if the diameter of the energy beam 22 is large enough to cover all droplets). If the reactant droplets 16 have sufficient viscosity, the surface forces will not be sufficient to pull them together and they may all be placed on the sample 18. Thereafter, the reactant droplets 16 can be immediately activated by the laser beam 22. Again, if the reactant 16 has a viscosity, the reactants are drawn into lines of different shapes without placing the reactants 16 in a droplet pattern. Repeating the application of reactant 16 in this manner and repeatedly applying energy beam 22 will create a hole shape 74 in sample 18 having a high aspect ratio walls of arbitrary depth, as shown in FIG. 11C. .

It can be known that many simple shapes, such as rectangles, can be created. You can also use a combination of large and small rectangles, squares, circles, and lines to create more complex shapes. Complex shapes can also be built on depth and lateral dimensions. By extension, by using the aforementioned incremental reactants, complex incremental shapes can be created in height and laterally. In addition, via extensions, holes or shapes that are approximately circular in shape relative to one another in position or relative to other features may be established on the sample 18. Again, the reactants that establish the array can be sequentially activated to a single location, or if the concentrated spot is sufficiently large, the reactants can be simultaneously activated in multiple locations.

The many features and advantages of the invention are apparent from the scope of the invention. In addition, many variations and modifications can be made by those skilled in the art, and the present invention is not limited to the precise construction and operation of the present invention. .

10. . . Scanning probe microscope probe assembly

12. . . Probe lever

14. . . Probe tip

15. . . Probe tip

16. . . Reactant

18. . . Target surface

20. . . Electromagnetic source

twenty two. . . Electromagnetic beam

twenty four. . . Depression

26. . . Incremental reactant

28. . . The residue

30. . . Reactant pool

32. . . Reactant container

33. . . Hydrophobic insulator

34. . . Reactant

36. . . Reactant

37. . . Depression

38. . . Target component

40. . . First component layer

42. . . Second component layer

48. . . Depression

50. . . Incremental reactant

52. . . The residue

54. . . Hole

55. . . Termination layer

56. . . Third component layer

58. . . Fourth component layer

59. . . Hole

60. . . Non-conductive plug

61. . . Conductive residue

62. . . Reactant

63. . . coating

64. . . Second reactant

66. . . Cantilever beam

68. . . Cutting edge

70. . . aisle

72. . . Fluid reactant

74. . . Reactant

Figure 1A shows a scanning probe microscope probe assembly with a reduced amount of reactants on the probe tip above the surface of a target component; Figure 1B shows a scanning probe microscope probe assembly, The probe tip has a reactant amount adjacent to the target member such that the reactant wets to the surface of the target member surface; FIG. 1C depicts the target member surface with a reduced amount of reactant on the surface, The light beam is directed to the reactant; FIG. 1D is a diagram showing the surface of the target element having a depressed portion, wherein the depressed portion is a result of activation of a reduced amount of reactant on the surface by the beam; FIG. 2A is a drawing A scanning probe microscope probe assembly is shown having an incremental amount of reactant on the probe tip above the surface of a target component; and FIG. 2B is a scanning probe microscope probe assembly on the probe tip Having an incremental amount of reactant adjacent to the target element such that the reactant wets to the surface of the target element surface; Figure 2C depicts the surface of the target element with an incremental amount of reactant on the surface, Beam is the guide To the reactant; FIG. 2D is a diagram showing the surface of the target element having a bump, wherein the bump is a result of activation of the incremental reaction of the beam on the surface; FIG. 3A is a diagram Scanning probe microscope probe assembly depicting the amount of reactants from a reactant pool; Figure 3B is a probe tip showing the amount of reactants; and Figure 4A is a scanning probe microscope showing Depositing the reactant onto a surface depression wherein the surface depression is caused by a previously applied subtractive reactant; Figure 4B depicts an electromagnetic source that directs an energy beam to the reactant; Figure 4C depicts A hole is formed, wherein the hole is formed by a second or subsequent reactant deposition and a termination layer material that does not react with the etchant; FIG. 5A is a scanning probe microscope, which is incremental The reactant is deposited onto a surface depression, wherein the surface depression is caused by a previously applied decrementing reactant; and FIG. 5B is an electromagnetic source that directs an energy beam to the incremental reactant; 5C Show that the part produced is a filled hole, wherein the hole is created by applying an incremental reactant on top of a terminating layer material; Figure 5D depicts the resulting filled hole, wherein the hole is created by applying an incremental reactant 6A is a multi-layered component; FIG. 6B is a result of etching a hole in a sample, the hole being filled with a non-conductive residue; FIG. 6C is a drawing The result of etching a hole in the non-conductive residue; Figure 6D shows the hole filled in the non-conductive residue, the filling residue in the figure is electrically conductive; Figure 7 is shown at the tip and The static charge on the reactant and the opposite static charge on the target element; Figure 8A shows a probe tip coated with a reactant; and Figure 8B shows a cantilever beam of a probe assembly, Dropping the tip of the probe to the surface of the sample; Figure 8C shows the reactant deposited on the surface of the sample after the probe has moved away from the surface; Figure 9A shows a probe tip that has been coated to have been immersed a reactant in a solvent liquid; Figure 9B shows one of the reactants a droplet that occurs when the coated probe tip reacts with the first droplet of the reactant; Figure 10A depicts a laser chemical processing system having a probe assembly that includes the channel Inside to transport fluid to the surface of the sample; Figure 10B shows the transport of fluid from the channel to the surface of the sample; Figure 10C shows an energy source that activates the fluid after it has been deposited on the surface of the sample; 11A shows the placement of multiple reactant droplets on the surface of a sample; Figure 11B shows the activation of multiple reactant droplets on the sample; Figure 11C shows the placement and activation The shape caused by the droplets on the surface of a sample.

16. . . Reactant

18. . . Target surface

20. . . Electromagnetic source

twenty two. . . Electromagnetic beam

Claims (23)

An apparatus for modifying an object, the apparatus comprising: a movable probe having a probe tip positioned adjacent to the object; a reactant positioned on the object; and an energy component Used to direct its output directly to the reactant to correct the object, wherein the reactant is placed on the probe tip via an electrostatic process. The device of claim 1, wherein the probe is included in a component for positioning the reactant on the article. The apparatus of claim 2, wherein the component is a scanning probe microscope. The apparatus of claim 3, wherein the reactant is positioned using a probe tip of the scanning probe microscope. The apparatus of claim 4, wherein the reactant is placed on the probe tip via a hydrophilic process. The device of claim 1, wherein the energy component is an electromagnetic component. The apparatus of claim 1, wherein the energy element is a laser. The apparatus of claim 7, wherein the added material is attached to another portion of the article. The device of claim 1, wherein the energy component is for directing radio waves to the sample. The apparatus of claim 1, wherein the object is a single level component. The device of claim 1, wherein the article comprises at least two levels. The device of claim 11, wherein one of the at least two levels is used as a termination layer. The apparatus of claim 11, wherein the reactant is used to remove material from one of the at least two levels and does not react with the other of the at least two levels. The device of claim 1, wherein the object is a semiconductor component. The apparatus of claim 1, wherein the reactant is used to remove material from the article. The apparatus of claim 1, wherein the reactant is used to add material to the article. The apparatus of claim 16, wherein the added material is a conductor. The apparatus of claim 16, wherein the added material is an insulator. The apparatus of claim 1, wherein the reactant is selected according to the item. The apparatus of claim 1, wherein the energy element is for increasing the reaction time of the reactant on the article. The device of claim 1, further comprising a probe assembly and a fluid delivery channel. The apparatus of claim 1, further comprising a residue removing device. The apparatus of claim 1, further comprising the step of placing the reactants in a plurality of locations to establish features of a particular shape.