TWI460412B - Microcantilever array sensor, microcantilever-array sensing system and method therefor - Google Patents

Description

Cantilever beam sensing wafer, cantilever beam sensing system and method thereof

The present invention relates to a microcantilever sensor, and more particularly to a cantilever beam sensing wafer, a cantilever beam sensing system, and a method therefor.

With the advancement of biotechnology, various types of biosensors have been developed, and their purpose is to measure specific biomolecules or tissues. Among them, the measured targets include various biomolecules or tissues such as enzymes, DNA, proteins, and microorganisms.

Biosensors are primarily measured by the use of specific bonds between molecules.

The structure of the biosensor can be roughly divided into three parts.

The first part is the sensing layer. The sensing molecular layer is mostly located on the surface of the biosensor. The surface of the sensing molecular layer is generally provided with an identifying molecule. During the sensing process, the molecular line is identified as a receptor (Bioreceptor), which can form a bond with the analyte molecule (Analyte) present as a substrate in the detection environment. Therefore, a specific affinity bonding reaction between organisms occurs in the sensing molecule layer.

The second part is the energy conversion element (Transducer). The energy conversion element mainly converts the bio-bonding reaction into various physical signals that can be read and measured. Common physical signals currently include optical signals, mechanical signals, Thermometric signals, Acoustical signals, Magnetic signals, or Electrochemical signals.

The third part is the Read-Out System. The signal output system performs subsequent reading and analysis processing on the physical signals converted by the energy conversion elements, thereby allowing the user to perform interpretation of the relevant biological characteristics.

Among them, mechanical energy biosensors are quite common types of sensors. The mechanical energy biosensor can be divided into a surface stress sensor and a Resonant Sensor.

The piezoresistive microcantilever sensor is a type of surface stress sensor. The piezoresistive microcantilever sensor is a piezoelectric material that is buried in the structure of the cantilever beam and is sensed by the fact that the piezoresistive material is subjected to stress to cause a change in resistance value. During sensing, when the analyte molecules are bonded to the surface of the cantilever beam, the surface stress generated causes the cantilever beam to bend, thereby burying in the cantilever beam. The piezoresistive material is stressed to change its resistance value. Then, use the Wheatstone bridge to convert its small resistance value change into voltage signal readout.

The invention discloses a cantilever beam sensing wafer, which comprises a main body, a plurality of sets of contact points and a plurality of first cantilever beams. The body has a plurality of outer surfaces, an object to be tested inlet, and an object to be tested outlet. The object to be tested and the outlet of the object to be tested are tied to at least one outer surface. The inside of the body has a detection chamber, and the detection chamber communicates with the inlet of the object to be tested and the outlet of the object to be tested. The contacts are disposed in insulation with one another on one of the outer surfaces. The first cantilever beam is suspended and spaced apart from each other on the side wall of the detection chamber, and is electrically connected to one of the pair of contacts.

The invention further discloses a cantilever beam sensing system comprising a cantilever beam sensing chip and a measuring device. The measuring device is electrically coupled to each set of contact points of the cantilever sensing wafer and is used to measure the electrical signals of the respective first cantilever beams.

The invention further discloses a cantilever beam sensing method, which comprises: introducing a sample into a detection cavity of a cantilever beam sensing wafer, measuring a signal of each first cantilever beam by using a measuring device, based on a threshold value At least one effective value is selected from the measured electrical signals of the first cantilever beam, and an average value of the filtered effective values is calculated. Wherein, the sidewalls of the detection cavity of the cantilever beam sensing wafer are suspended and separated from each other by a plurality of first cantilever beams, and the measuring devices are electrically connected to the respective first cantilever beams.

In summary, the cantilever beam sensing wafer, the cantilever beam sensing system and the method thereof according to the present invention directly extract the respective electrical signals of each cantilever beam from the respective contact pairs of the cantilever beam, and are effective by superimposing The electrical signal is used to enhance the signal strength to facilitate the processing of subsequent signal interpretation, analysis and conversion.

1 and 2 are schematic views of a cantilever beam sensing wafer in accordance with an embodiment of the present invention.

Referring to Figures 1 and 2, the cantilever beam sensing wafer 10 includes a body 100, a plurality of sets of contact pairs 171, 172, and a plurality of cantilever beams. Here, for convenience of description, the description will be made with two cantilever beams, which will hereinafter be referred to as a first cantilever beam 191 and a first cantilever beam 192, respectively.

A detecting chamber 110 is formed inside the main body 100, and an object inlet 130 and an object to be tested 132 are formed on the outside of the main body 100. The object to be tested 130 and the object to be tested 132 are formed on the outer surface 100a of the body 100. In this embodiment, the object to be tested 130 and the object to be tested 132 are formed on the same outer surface 100a of the body 100, however this is not a limitation of the present invention. The object to be tested 130 and the object to be tested 132 may be formed on the outer surfaces 100b and 100c of the opposite sides of the main body 100, respectively, in accordance with actual design requirements. The object to be tested 130 is connected to the detection chamber 110, and the object to be tested 132 is connected to the detection chamber 110. In some embodiments, the analyte inlet 130 and the analyte outlet 132 are respectively connected to opposite sides of the detection chamber 110.

Each set of contact pairs 171/172 has two contacts, which are hereinafter referred to as first contacts 171a, 171b/172a, 172b for convenience of description. The first contacts 171a, 171b, 172a, 172b are disposed on the outer surface 100d of the body 100 insulatively from each other.

In some embodiments, to facilitate electrical measurement of the measurement device, the first contacts 171a, 171b, 172a, 172b may be disposed on the same outer surface 100a of the body 100, although this is not a limitation of the present invention. The first contacts 171a, 171b, 172a, 172b may also be disposed on two or more different outer surfaces of the body 100.

In this embodiment, the first contacts 171a, 171b, 172a, 172b are tied to the object to be tested 130 and the object to be tested 132 on different outer surfaces 100a, 100d of the body 100, however, this is not the present invention. The limit. The first contacts 171a, 171b, 172a, 172b, the object to be tested 130, and the object to be tested 132 may be disposed on the same outer surface 100a of the body 100, as shown in FIGS. 3 and 4, in accordance with actual design requirements. Show.

The first cantilever beams 191, 192 are suspended and disposed on the side walls of the detection chamber 110 separately from each other. Each of the first cantilever beams 191/192 corresponds to the contact pair 171/172 and is electrically connected to the two first contacts 171a, 171b/172a, 172b of the corresponding contact pair 171/172.

In some embodiments, the body 100 can include a base 102 and a cover 104.

A groove is formed in the first surface 104a of the cover 104 to serve as the flow path 112. The cover 104 has a second surface (ie, outer surface 100a) relative to the first surface 104a. The object to be tested 130 and the outlet of the object to be tested 132 correspond to the flow path 112 on the second surface of the cover 104. Further, the through holes 105 and 106 penetrate the cover 104. The through hole 105 is coupled between the object to be tested 130 and the flow path 112 and communicates with the object to be tested 130 and the flow path 112. The through hole 106 is coupled between the object to be tested 132 and the flow path 112 and communicates with the object to be tested 132 and the flow path 112.

A groove is formed on the first surface 102a of the substrate 102 to serve as the microgroove 114. Here, the position of the microgroove 114 on the first surface 102a of the substrate 102 may correspond to the position of the flow channel 112 on the first surface 104a of the cover 104. Also, the opening size of the flow path 112 may be greater than or equal to the opening size of the micro-groove 114.

Referring to FIGS. 1 to 5, the first cantilever beams 191, 192 protrude from the side walls of the microgrooves 114 toward the center. In some embodiments, each of the first cantilever beams 191/192 can have a support plate 191a/192a, and the support plates 191a, 192a can be a suspended platform from which the substrate 102 extends centrally from the sidewall of the microgroove 114.

When the first surface 104a of the cover 104 is sealingly sealed with the first surface 102a of the substrate 102, the flow channel 112 and the microchannel 114 may be combined into the detection cavity 110. In the first and third figures, the rectangular line of the dotted line on the first surface 102a of the substrate 102 indicates the corresponding position of the flow path 112.

In some embodiments, the length of the support plates 191a, 192a (the shortest distance from the free end to the fixed end) can be about 200 μm . The width of the support plates 191a, 192a may be about 150 μm .

In some embodiments, the detection chamber 110 can be controlled in a laminar flow environment through a flow channel design to avoid turbulence disturbances, thereby avoiding external noise caused by disturbances.

For example, the following equation 1 can be obtained under the assumption of momentum conservation and incompressible flow.

Where η ₀ represents the viscosity coefficient (Viscosity), ρ ₀ represents the density, and the symbol superscript * represents the dimensionless parameter. Since the Reynolds number (Re) is usually less than 1 in the micro runner system, it is in the Laminar Flow state. In the flow field layer which is mainly dominated by the viscous force term and the pressure term, the following formula is the Reynolds number R _e of formula II.

In Equations 1 and 2, L _ref is the characteristic length.

In some embodiments, the detection chamber 110 can be designed as a rectangular flow path, so that the characteristic length is calculated by the hydraulic diameter (Hydraulic Diameter) to obtain the following formula 3.

Where H is the flow path height and W is the flow path width. From the second and third formulas, the Reynolds number R _e can be derived from the following formula four.

Wherein Φ is the flow rate of the injection pump (Syringe Pump), which is 0.6 ml/h. It is assumed that pure water at room temperature is η ₀ = 8.9 × 10 ^-4 Pa ‧ s, and ρ ₀ = 998 kg / m ³ . If the design of the flow channel height 100 m, the Reynolds number R _e which is about 0.15, i.e., in line with a laminar flow state. Thereto, the relationship between the Reynolds number R _e in the flow channel height H as shown in FIG. 6.

Although the Reynolds number of the flow field is small under the laminar flow state, an inlet length L _e is also required, making it a Fully Develop Laminar Flow. Here, the inlet length L _e is estimated to be the following formula 5.

The inlet length (L _e ) can be calculated from Equation 5 to be 116 μm . Here, the relationship between the inlet length L _e and the flow path height H is as shown in FIG. 7 .

In some embodiments, referring to Figures 1 and 2, the size of the cover 104 (the size of the first surface 104a) may be smaller than the size of the substrate 102 (the size of the first surface 102a) such that when the cover 104 is first When the surface 104a is sealingly sealed with the first surface 102a of the substrate 102, the cover 104 is only shielded to a portion of the first surface 102a of the substrate 102, exposing another portion of the first surface 102a of the substrate 102 to form a cantilever beam. The outer surface 100a of the wafer 10 is measured.

At this time, a plurality of conductive lines 151a, 151b, 152a, 152b may be formed directly on the first surface 102a of the substrate 102.

One ends of the conductive lines 151a, 151b, 152a, 152b are respectively coupled to the first contacts 171a, 172b, 172a, 172b, and the other pair is coupled to the corresponding first cantilever beams 191, 192. In other words, each of the first cantilever beams 191/192 corresponds to a pair of conductive lines 151a, 151b/152a, 152b. Each pair of conductive lines 151a, 151b/152a, 152b electrically connects each of the first cantilever beams 191/192 to a corresponding contact pair 171/172. In this embodiment, the conductive line 151a is coupled between the first cantilever beam 191 and the first contact 171a of the contact pair 171, and the conductive line 151b is coupled to the first cantilever beam 191 and the contact pair 171. Between one contact 171b, the first contacts 171a, 171b of the contact pair 171 can be used as the positive and negative contacts of the first cantilever beam 191, respectively. Similarly, the conductive line 152a is coupled between the first cantilever beam 192 and the first contact 172a of the contact pair 172, and the conductive line 152b is coupled to the first contact of the first cantilever beam 192 and the contact pair 172. Between the 172b, the first contacts 172a, 172b of the contact pair 172 can be used as the positive and negative contacts of the first cantilever beam 192, respectively.

In some embodiments, referring to Figures 3 and 4, the size of the cover 104 (the size of the first surface 104a) may be substantially equal to the size of the substrate 102 (the size of the first surface 102a) such that when the cover 104 is When the first surface 104a is sealingly sealed with the first surface 102a of the substrate 102, the cover 104 is completely shielded from the first surface 102a of the substrate 102 to form a rectangular wafer body.

At this time, the first contacts 171a, 172b, 172a, 172b may be disposed on the second surface (ie, the outer surface 100a) of the cover 104.

In some embodiments, a plurality of conductive traces 151a, 151b, 152a, 152b may be formed directly on the first surface 102a of the substrate 102, and the conductive traces 151a, 151b, 152a, 152b are from the corresponding first cantilever beam 191 192 extends to the positions of the respective first contacts 171a, 172b, 172a, 172b.

A plurality of guiding holes 151c, 151d, 152c, and 152d are inserted through the cover body 104, and one ends of the guiding holes 151c, 151d, 152c, and 152d are respectively coupled to the first contacts 171a, 172b, 172a, and 172b.

When the first surface 104a of the cover 104 is sealingly sealed with the first surface 102a of the base 102, the other ends of the guide holes 151c, 151d, 152c, and 152d are respectively coupled and electrically connected to the conductive lines 151a, 151b, and 152a. , 152b.

In this embodiment, the via 151c is coupled between the first contact 171a and the conductive line 151a to electrically connect the first contact 171a with the conductive line 151a. The guiding hole 151d is coupled between the first contact 171b and the conductive line 151b to electrically connect the first contact 171b and the conductive line 151b. The guiding hole 152c is coupled between the first contact 172a and the conductive line 152a to electrically connect the first contact 172a and the conductive line 151a. The via 152d is coupled between the first contact 172b and the conductive line 152b to electrically connect the first contact 172b and the conductive line 152b.

Referring to Figures 1 through 5, each of the first cantilever beams 191/192 may have a piezoresistive layer 191b/192b, and the piezoresistive layers 191b/192b are tied to their support plates 191a/192a. In some embodiments, the piezoresistive layer 191b/192b is tied to the upper surface of the support plate 191a/192a (ie, the surface that extends from the first surface 102a).

The piezoresistive layers 191b, 192b are electrically connected to corresponding contact pairs 171, 172, respectively. In this embodiment, the piezoresistive layer 191b is electrically coupled to the first contacts 171a, 171b of the contact pair 171 via the conductive traces 151a, 151b (and the vias 151c, 151d). Similarly, the piezoresistive layer 192b is electrically coupled to the first contacts 172a, 172b of the contact pair 172 via conductive traces 152a, 152b (and vias 152c, 152d).

In some embodiments, the other side of the piezoresistive layers 191b, 192b relative to the free ends of the first cantilever beams 191, 192 can be positioned over the first surface 102a of the substrate 102 beyond the support plates 191a, 192a.

In other words, the piezoresistive layers 191b, 192b can be distinguished as the inductive side area A1 and the coupling area A2. The sensing side area A1 is located on the support plates 191a, 192a, and the coupling area A2 is located on the first surface 102a of the substrate 102.

Here, the first contacts 171a, 171b are overlapped on the coupling region A2 of the piezoresistive layer 191b, thereby being electrically connected to the piezoresistive layer 191b. Similarly, the first contacts 172a, 172b are overlapped on the coupling region A2 of the piezoresistive layer 192b, thereby being electrically connected to the piezoresistive layer 192b.

In some embodiments, the piezoresistive layers 191b, 192b can be U-shaped. Here, both ends of the U-shaped piezoresistive layers 191b, 192b extend toward the fixed sides of the support plates 191a, 192a (i.e., the side of the side walls of the microgrooves 114 that engage the substrate 102). In other words, the turning ends of the U-shaped piezoresistive layers 191b, 192b are tied to the free ends of the support plates 191a, 192a.

In some embodiments, the length of the piezoresistive layers 191b, 192b (the shortest distance from the end of the turn to both ends) can be about 160 μm . The maximum width of the piezoresistive layers 191b, 192b may be about 50 μm .

In some embodiments, the material of the piezoresistive layers 191b, 192b may be polycrystalline germanium.

In some embodiments, each of the first cantilever beams 191/192 can have a sensing layer 191c/192c, and the sensing layer 191c/192c is in its piezoresistive layer 191b/192b. Here, the sensing layers 191c, 192c may provide an identification molecule to be fixed thereon.

In some embodiments, this sensing layer 191c/192c may overlie the entire upper surface of the support plates 191a/192a (ie, opposite the other side surface of the microgrooves 114).

In some embodiments, the sensing layers 191c, 192c can be gold films.

In some embodiments, the thickness of the sensing layers 191c, 192c can be within 50 nm , and preferably between 30 nm and 40 nm .

In some embodiments, the recognition molecules can be immobilized on the surface of the sensing layers 191c, 192c by physical adsorption, covalent bonding, embedding, or electrostatic adsorption.

The physical adsorption method is to fix the recognition molecules on the surface of the sensing layers 191c, 192c by means of non-covalent bonding. Non-covalent linkages include hydrogen bonding, van der Waals, hydrophilicity, electrostatic forces, and the like.

The covalent bonding method is to use the atoms of the surface materials of the sensing layers 191c, 192c to share a pair of electrons with the recognition molecules to generate a covalent bond. The bonding strength of the covalent bonding method is larger than that of the physical adsorption method, so that it is difficult for the identification molecule to be carried away by the fluid, and it is easy to maintain the stability of the identified molecular configuration. For example, the sensing layers 191c, 192c having a surface material of gold can generate a gold-sulfur covalent bond with an identification molecule having sulfur.

The embedding method uses a polymer material to embed an identification molecule therein and cover the surface of the sensing layers 191c and 192c.

In the electrostatic adsorption method, the electrically-charged material deposited on the sensing layers 191c and 192c is used to attract the isotropic electric identification molecules, and the identification molecules are adsorbed on the surfaces of the sensing layers 191c and 192c. The electrostatic adsorption method is suitable for the identification of molecules with strong chargeability.

In some embodiments, pressure equalization layers 191d, 192d may be formed under the piezoresistive layers 191b, 192b. In other words, pressure equalization layers 191d, 192d are formed between the support plates 191a, 192a and the piezoresistive layers 191b, 192b. Here, the pressure balance layers 191d, 192d are used to balance the residual stress.

In some embodiments, the pressure equalization layers 191d, 192d may also directly form a full layer of pressure balancing layer on the entire first surface 102a of the substrate 102.

In some embodiments, the material of the pressure balance layers 191d, 192d may be selected from cerium oxide. In some embodiments, the substrate 102 can be made of a material that is not stressed.

In some embodiments, referring to FIG. 5, a protective layer 101 can be provided on the first surface 102a of the substrate 102. The protective layer 101 may cover the conductive traces 152a, 151b (151a, 152b, 140a, 140b) to protect the conductive traces 152a, 151b. Also, the protective layer 101 can provide flatness of the first surface 102a of the substrate 102, thereby effectively conforming to the cover 104.

Furthermore, the protective layer 101 may also be covered on the piezoresistive layers 191b, 192b to protect the piezoresistive layers 191b, 192b. At this time, the sensing layers 191c, 192c may be formed on the protective layer 101 corresponding to the respective piezoresistive layers 191b, 192b.

In addition, when the contact pairs 160, 170 are located on the first surface 102a of the substrate 102, the protective layer 101 may correspond to the respective contacts (ie, the first contact and the second contact) of the contact pairs 160, 170. The location has an opening therethrough to expose the various contacts. When the contact pairs 160, 170 are not located on the first surface 102a of the substrate 102, the vias coupled between the contacts and the conductive lines 140, 150 pass through the protective layer 101, thereby physically coupling to the contacts. And conductive lines 140, 150. For convenience of explanation, the conductive traces 151, 152 are generally referred to as conductive traces 150, while the contact pairs 171, 172, 173, 174 are collectively referred to as contact pairs 170.

In the foregoing embodiment, although the two first cantilever beams 191, 192 are taken as an example for detailed description, the number is not limited by the present invention. Two, three or more first cantilever beams can be designed with the required precision.

Referring to Figures 8 and 9, in this embodiment, the cantilever beam sensing wafer 10 has four first cantilever beams 191, 192, 193, 194, and the first cantilever beams 191, 192, 193, 194 are electrically Connected to respective corresponding contact pairs 171, 172, 173, 174.

In some embodiments, the first surface 102a of the substrate 102 can have a plurality of microgrooves 114a, 114b thereon. Each of the first cantilever beams 191/192/193/194 can be disposed in any of the microgrooves 114a, 114b. In this embodiment, for example, the first cantilever beams 191, 192 are disposed in the microgrooves 114a, and the first cantilever beams 193, 194 are disposed in the microgrooves 114b.

At this time, when the cover 104 and the base 102 are sealingly bonded, the opening of the flow path 112 on the first surface 104a of the cover 104 can cover the micro grooves 114a, 114b at the same time.

In some embodiments, at least one second cantilever beam 180 can be formed on the first surface 102a of the substrate 102. The second cantilever beam 180 is flat on the first surface 102a of the substrate 102.

The second cantilever beams 180 also each have a set of contact pairs 160. Each set of contact pairs 160 also has two contacts. For convenience of description, hereinafter referred to as second contacts 160a, 160b. The second contacts 160a, 160b are insulated from each other on at least one outer surface of the body 100. Also, the contacts of the pair of contacts 160, 170 of the cantilever sensing wafer 10 are insulated from each other on at least one outer surface of the body 100.

The second cantilever beam 180 is electrically coupled to the second contacts 160a, 160b of the contact pair 160 via the conductive lines 140a, 140b. Here, the second contacts 160a, 160b of the contact pair 160 can serve as positive and negative electrical contacts of the second cantilever beam 180, respectively.

In some embodiments, when the second contacts 160a, 160b and the conductive traces 140a, 140b are in different planes, for example, the second contacts 160a, 160b are on the outer surface 100a and the conductive traces 140a, 140b are on the first surface. The second contact 160a and the conductive line 140a are electrically coupled to each other through the via hole 140c of the cover body 104, and the second contact 160b and the conductive line 140b can pass through the cover body 104. The via hole 140d is electrically coupled, as shown in FIGS. 3 and 4.

In some embodiments, each of the second cantilever beams 180 includes a piezoresistive layer 180b, and the piezoresistive layer 180b is electrically coupled to the second contacts 160a, 160b of the corresponding pair of contacts 160.

In some embodiments, a pressure equalization layer 180d may be formed under the piezoresistive layer 180b of the second cantilever beam 180. In other words, a pressure balance layer 180d is formed between the first surface 102a of the substrate 102 and the piezoresistive layer 180b. Here, the pressure balance layer 180d is used to balance the residual stress.

In some embodiments, the pressure balancing layer 180d may also directly form a full layer of pressure balancing layer on the entire first surface 102a of the substrate 102. In some embodiments, the pressure equalization layers 180d, 191d, 192d are respectively localized blocks of the entire layer of pressure equalization layers under the respective piezoresistive layers.

In some embodiments, the material of the pressure balance layer 180d may be selected from cerium oxide. In some embodiments, the substrate 102 can be made of a material that is not stressed.

Here, each of the second cantilever beams 180 is not provided with a sensing layer for providing temperature compensation of the first cantilever beam 190. For convenience of description, the first cantilever beams 191, 192, 193, 194 are collectively referred to as a first cantilever beam 190.

In some embodiments, when the piezoresistive layer of the first cantilever beam 190 is U-shaped, the piezoresistive layer 180b of the second cantilever beam 180 is also designed in a U shape. Here, the two ends of the U-shaped piezoresistive layer 180b are respectively coupled to the conductive lines 140a, 140b.

In some embodiments, the material of the piezoresistive layers 180b, 191b, 192b may be polycrystalline germanium.

Referring to FIG. 10, in this embodiment, the cantilever beam sensing wafer has twelve first cantilever beams 190 and two second cantilever beams 180.

The first cantilever beams 190 are electrically connected to the corresponding contact pairs 170 via the conductive lines 150 , and the second cantilever beams 180 are electrically connected to the corresponding contact pairs 160 via the conductive lines 140 .

In this embodiment, the width of the flow channel 112 on the corresponding cover 104 may be about 3 mm , the length of the flow channel 112 may be about 12 mm , and the height of the flow channel 112 may be about 100 μm .

In some embodiments, referring to FIG. 10, substrate 102 can include a wafer layer 1021 and a bottom plate 1023.

Wafer layer 1021 has a through opening that is a microgroove 114 and has a first cantilever beam 190 in the opening. The surface of the wafer layer 1021 has a contact pair 170 corresponding to each of the first cantilever beams 190.

In some embodiments, the surface of the wafer layer 1021 can have a second cantilever beam 180 and a respective corresponding contact pair 160 that are flat on the surface.

The 11A to 11G drawings are the manufacturing flow of the substrate 102 corresponding to the line II-II of Fig. 10. In the drawings 11A to 11F, a process sectional view of a cantilever beam (i.e., the aforementioned first cantilever beam 190) is schematically illustrated as an illustration, which can be correspondingly promoted as a process of a cantilever beam array (i.e., a plurality of cantilever beams). For convenience of explanation, the following description will be made with the first cantilever beam 190.

Referring to Fig. 11A, protective layers 232, 234 are formed on the upper surface 210a and the lower surface 210b of a substrate 210, respectively. In this embodiment, the protective layer 232 can be used as the support plate 190a of the first cantilever beam 190. The protective layer 234 can be used as the last back etched shield.

In some embodiments, a layer of tantalum nitride may be deposited on the front and back sides of the substrate 210 at a temperature of about 780 ° C using a low pressure chemical vapor deposition (LPCVD) technique as a protective layer. 232, 234. In some embodiments, the material of the protective layers 232, 234 may be tantalum nitride.

In some embodiments, the substrate 210 can be a single throw wafer. This single throw wafer can be a germanium wafer.

In some embodiments, the substrate 210 can have a thickness of about 500 μm . The protective layers 232, 234 may have a thickness of about 215 μm .

Next, a layer of pressure balance material is formed on the protective layer 232. In other words, a pressure balance material layer 250 may be formed on the other side surface of the protective layer 232 with respect to the substrate 210 to provide the pressure balance layer 190d of the first cantilever beam 190 (and the pressure balance layer 180d of the second cantilever beam 180) ).

In some embodiments, a layer of yttria may be deposited on the protective layer 232 using a plasma enhanced chemical vapor deposition (PECVD) technique to serve as the pressure balancing material layer 250. In some embodiments, the material of the pressure balance material layer 250 may be ruthenium oxide.

In some embodiments, the pressure balance material layer 250 has a thickness of about 400 nm .

A layer of piezoresistive material 270 can then be formed over the layer of pressure balancing material 250. In other words, a layer of piezoresistive material 270 may be formed on the other side surface of the pressure balance material layer 250 with respect to the protective layer 232.

In some embodiments, a layer of polycrystalline germanium material may be deposited on the surface of the pressure balancing material layer 250 at about 620 ° C using LPCVD techniques, while simultaneously implanting ions into the polycrystalline germanium material using ion implantation techniques. After the implantation is completed, an annealing process is performed to increase the electrical properties of the polycrystalline silicon material, reduce the defect density inside the polycrystalline silicon material, and reduce the residual stress. In some embodiments, the material of the piezoresistive material layer 270 may be an electrically doped polysilicon (Doped Poly-Silicon).

In some embodiments, the deposition temperature of the polycrystalline germanium material can be between about 609 ° C and about 650 ° C, and preferably between about 610 ° C and about 625 ° C. The deposition pressure of the polycrystalline germanium material can be between about 0.3 Torr and about 0.6 Torr.

In some embodiments, the piezoresistive material layer 270 can have a thickness between about 90 nm and about 198 nm , and preferably about 150 nm .

In some embodiments, the ion implantation process can be ion implanted with elements of the three or five family.

And the planting concentration is about 3.45 × 10 ¹⁵ /cm ^-2 (about 3.94 × 10 ¹⁸ /cm ^-3 ), and the electron intensity is about 30 keV.

In some embodiments, the implant element can be boron to form a P-type doped polysilicon. The implant element may also be phosphorus or arsenic to form an N-type doped polysilicon.

In some embodiments, the ion implantation process can have a implant concentration of about 3 x 10 ¹⁹ /cm ^-3 .

In some embodiments, the ion implantation process may have an electron intensity between about 10 keV and about 200 keV.

In some embodiments, the temperature of the annealing process can be between about 1000 ° C and 1100 ° C.

In some embodiments, the ion implantation process can be implanted with boron ions at a concentration of about 3.45 x 10 ¹⁵ /cm ^-2 (about 3.94 x 10 ¹⁸ /cm ^-3 ) and an electron intensity of about 30 keV. Moreover, the parameters of the subsequent annealing process may be 1050 ° C and continuous annealing for 30 minutes to help increase the grain size and reduce the energy barrier between the crystal lattices.

After the annealing process is completed, the surface of the polycrystalline silicon material will form a ruthenium dioxide film due to high temperature. Therefore, BOE (Buffer oxidation etchant) can be used to etch the surface cerium oxide to avoid affecting the signal ( That is, the electrical signal of the cantilever beam is measured.

In some embodiments, the etch may be immersed in the BOE for about 40 seconds.

Referring to FIG. 11B, after the piezoresistive material layer 270 is formed, the position and shape of the piezoresistive layer 190b are defined, and then the pressure resistive material layer 270 is not pressure-balanced by the portion of the piezoresistive layer 190b that does not belong to the piezoresistive layer 190b according to the defined position and shape. Material layer 250 is removed. Thus, after completion of the partial removal step of the piezoresistive material layer 270, only the desired piezoresistive layer 190b remains on the pressure balancing material layer 250.

In some embodiments, the process of defining the position and shape of the piezoresistive layer 190b can be performed through a yellow light process. Then, an etching process of the piezoresistive material layer 270 is performed according to the defined position and shape to etch the piezoresistive material layer 270 into the desired piezoresistive layer 190b.

In some embodiments, the piezoresistive layer 190b can be defined in a yellow light chamber using a photoresist coater to spin coat the surface of the piezoresistive material layer 270 at a high speed. Next, the stacked structure of the photoresist, the piezoresistive material layer 270, the pressure balance material layer 250, the protective layer 232, the substrate 210, and the protective layer 234 is placed on a hot flat plate for soft baking to make the photoresist The solvent evaporates to improve the adhesion of the photoresist. Then, using the exposure machine, the mask pattern corresponding to the piezoresistive layer 190b (and the piezoresistive layer 180b) is aligned, and the exposure is transferred onto the photoresist. The developing solution is further used for the development operation. After the development is completed, the laminated structure of the photoresist, the piezoresistive material layer 270, the pressure balance material layer 250, the protective layer 232, the substrate 210, and the protective layer 234 is placed in an oven to be baked, so that the solvent in the photoresist is volatilized. Thereby, the resistance of the photoresist to the etching is improved, and thereby the excess water is evaporated to dryness, so that in the subsequent dry etching process, moisture can be prevented from interfering with the dry etching plasma ions and affecting the process quality.

Here, the photoresist of the model S1813 can be selected as the photoresist. The thickness of the photoresist can be about 1.5 μm . The soft baking temperature can be about 90 °C. The hard baking temperature can be about 90 °C.

Next, a dry etching process of the stacked structure of the photoresist, the piezoresistive material layer 270, the pressure balance material layer 250, the protective layer 232, the substrate 210, and the protective layer 234 is performed. On the dry etching process, a reactive ion etching machine (Reactive Ion Etch; RIE) may be used to etch the piezoresistive material layer 270 with a reaction power of about 70 W and using a gas of CF ₄ (methane). At this time, the region where the piezoresistive material layer 270 is not protected by the photoresist is etched by the reactive ions, and thus the piezoresistive material layer 270 is etched into the piezoresistive layer 190b (and the piezoresistive layer 180b) correspondingly to the defined position and shape. Here, the etching rate of the dry etching process may be about 40 nm / min .

Referring to Fig. 11B, after the piezoresistive layer 190b is formed, the conductive line 150 connecting the piezoresistive layer 190b is formed.

In some embodiments, a metal adhesion layer may be formed between the conductive line 150 and the pressure balance material layer 250 and between the conductive line 150 and the piezoresistive layer 190b to enhance the adhesion of the conductive line 150.

In some embodiments, after the formation of the piezoresistive layer 190b, a metal adhesion layer may be formed on the surface of the pressure balance material layer 250 and the surface of the piezoresistive layer 190b. Then, a layer of the wire material is formed on the metal adhesion layer. Finally, the etching process of the metal adhesion layer and the wire material layer is performed according to the position and shape of the conductive line 150 required, so that the conductive line 150 coupled to the piezoresistive layer 190b can be formed.

In some embodiments, an evaporation machine may be utilized on the surface of the pressure balance material layer 250 and the surface of the piezoresistive layer 190b, ie, the pressure balance material layer 250 and the piezoresistive layer 190b on the other side surface of the wafer 210. Fully depositing chromium (Cr), which is about 15 nm thick, is the metal adhesion layer.

After the vapor deposition of the metal adhesion layer is completed, gold (Au), which is a thickness of about 150 nm, is deposited on the metal adhesion layer by an evaporation machine.

The process of defining the position and shape of the conductive line 150 is performed using a yellow light process to form a photoresist corresponding to the conductive line 150.

After the definition of the photoresist is completed, the etching process of the conductive material layer is performed by using the gold etching solution, and the etching process of the metal adhesive layer is performed by using the chromium etching solution (Cr-7) to etch the metal adhesive layer and the conductive material layer into the same. The conductive line 150 is required. Here, after the etching is completed, it is necessary to ensure that no metal (metal chrome or gold) remains without being protected by the photoresist to avoid short circuit.

Referring to FIG. 11C, after the conductive lines 150 (and the conductive lines 140) are formed, the protective layer 101 is entirely deposited to protect the conductive lines 150 (and the conductive lines 140). Moreover, the protective layer 101 allows the substrate 102 to have a relatively flat bonding surface to conform to the cover 104.

In some embodiments, a layer of tantalum nitride may be deposited on the surface of the conductive trace 150 and the exposed pressure balance material layer 250 using PECVD techniques as the protective layer 101. Here, the deposition process using PECVD technology can prevent the conductive line 150 from being damaged due to excessive temperature.

In some embodiments, the thickness of the protective layer 101 can be about 600 nm , thereby providing better step coverage, thereby avoiding leakage effects and measuring the structure covered by the subsequent process.

Referring to FIG. 11D, after the protective layer 101 is formed, an etching process may be performed to expose the end of the conductive line 150 as an electrical contact of the first contact or via. Moreover, the protective layer 101 overlying the piezoresistive layer 190b is thinned by an etching process to prevent the cantilever beam from being too thick and too close to the neutral axis of the piezoresistive layer 190b, resulting in a decrease in sensitivity.

Here, only the protective layer 101 above the sensing side region A1 of the piezoresistive layer 190b may be thinned to avoid a stepped gap formed by the overlap of the conductive line 150 and the piezoresistive layer 190b, resulting in measurement of leakage or a subsequent etching process. Open circuit or damage. Here, the thickness of the thinned protective layer 101 may be about 250 nm .

In some embodiments, the position and shape of the end opening of the conductive trace 150 can be defined by a yellow light process by forming a photoresist having an opening corresponding to the end of the conductive trace 150 on the protective layer 101. Here, the photoresist of the model AZP4620 can be selected for the photoresist to provide relatively excellent etching bombardment resistance. The thickness of the photoresist can be about 6 μm -7 μm .

Then, according to the defined position and shape, a reactive ion etching machine is used to etch with a specific ratio of CF ₄ and O ₂ (oxygen) gas to puncture the protective layer 101 on the end of the conductive line 150 to be exposed. The ends of the conductive traces 150 are exposed.

Referring to FIG. 11E, the position and shape of the cantilever beam are defined by a yellow light process, and an etching process of the protective layer 101, the pressure balance material layer 250, and the protective layer 232 is performed according to the defined position and shape, thereby forming the first cantilever beam 190. .

Here, the photoresist can be made of AZP4620 photoresist. The etching process of the protective layer 101, the pressure balance material layer 250 and the protective layer 232 may use a counter ion etching machine, in a proper ratio of a mixed gas of CF ₄ and O ₂ , to have a photoresist-free protective region (ie, in the opposite of the micro-groove 114) The protective layer 101, the pressure balance material layer 250, and the protective layer 232 in position except for the first cantilever beam 190 are etched clean to form a first cantilever beam 190 that is attached to the substrate 210.

Wherein, for the second cantilever beam 180, only the step is performed, and the subsequent step of forming the sensing layer and the hanging step of the first cantilever beam 190 (ie, the substrate 210 and the protective layer 234 are not required). Back etching process).

Referring to FIG. 11F, the forming step of the sensing layer 190c of the first cantilever beam 190 and the hanging step of the first cantilever beam 190 are finally performed.

In the forming step of the sensing layer 190c, a layer of metal material may be entirely vapor-deposited on the upper surface of the protective layer 101 (i.e., the opposite side of the pressure-balancing material layer 250, the protective layer 232, and the other side surface of the substrate 210). Then, the position and shape of the sensing layer 190c are defined by the yellow light process, that is, the photoresist is formed on the metal material layer over the sensing side region A1 of the entire piezoresistive layer 190b. The etching of the sensing material layer is performed according to the defined position and shape to remove the region of the metal material layer that is not protected by the photoresist to form the sensing layer 190c.

Here, the metal material layer may be formed on the protective layer 101 by vapor deposition of a metal chromium and gold at a thickness of about 10 nm and 35 nm , respectively, using an electron beam evaporation machine. The photoresist of the model S1813 can be used for the photoresist. The etching solution for the metal material layer may be selected from a gold etching solution and a chromium etching solution.

In the floating step of the first cantilever beam 190, an etch protection can be formed by using an acryl clamp and an O-ring to prevent the etching solution from penetrating through the protective layer 101 and the protective layer 232 to erode the internal piezoresistive layer 190b. Then, under the etch protection of the acrylic clamp and the O-ring, the substrate 210 and the protective film 234 are immersed in the etching solution to etch the substrate 210 to the protective layer 232, thereby forming the first cantilever beam that is suspended. 190.

Here, the etching solution of the substrate 210 and the protective film 234 may be selected from potassium hydroxide (KOH), tetramethylammonium hydroxide (TMAH) or EDP. The etchant of the substrate 210 and the protective film 234 may be selected from potassium hydroxide to provide good etch direction and a relatively fast etching rate.

Among them, the tantalum wafer (substrate 210) in the <100> lattice direction can form an etching angle of about 54.7 degrees after etching.

Finally, referring to FIG. 11G, the laminated structure of the sensing layer 190c, the protective film 101, the piezoresistive layer 190b (and the piezoresistive layer 180b), the pressure balance material layer 250, the protective layer 232, the substrate 210, and the protective film 234 is further laminated. The protective film 234 is adhered to the bottom surface 1023 with respect to the other side surface of the substrate 210, and the opening of the micro groove 114 adjacent to the side of the protective film 234 is closed by the bottom plate 1023.

The bottom plate 1023 can be a printed circuit board (PCB). In some embodiments, the printed circuit board can be larger than the sensing layer 190c, the protective film 101, the piezoresistive layer 190b (and the piezoresistive layer 180b), the pressure balance material layer 250, the protective layer 232, the substrate 210, and the protective film 234. The stacked structure, the contact pairs 160, 170 can be disposed on the printed circuit board, and then electrically connected to the first cantilever beam 190 or the second cantilever beam 180 via conductive lines for measurement.

In addition, in the thickness analysis of the first cantilever beam 190, the thicknesses of the layers of the first cantilever beam 190 of four different thicknesses are as follows.

Moreover, in terms of measuring the resistance value as the detected electrical signal, the doping concentration, the temperature coefficient of resistance (TCR), and the piezoresistive factor of the first cantilever beam 190 of the four different thicknesses are different. ) as shown in Table 2 below. Among them, the calculation formula of the piezoresistive factor (G) is as shown in the following formula 6.

In Equation 6, Δ R is the amount of change in the resistance value of the first cantilever beam 190, R is the radius of curvature after the free end of the first cantilever beam 190 is depressed, and ΔZ is the free end of the first cantilever beam 190. The displacement amount, L is the length of the support plate 190a of the first cantilever beam 190, λ is the length of the piezoresistive layer 190b of the first cantilever beam 190, and Z _R is the distance between the neutral axis and the piezoresistive layer.

As can be seen from the above analysis, the first cantilever beam 190 having a thickness of 90 nm of the piezoresistive layer 190b is too large to be measured and used. The first cantilever beam 190 having a thickness of 120 nm of the piezoresistive layer 190b has an upper warpage of about 30 μm , which is still in a usable range; further, it can be improved by thickening the thickness of the protective layer 232 to 150 nm. The upper warpage of the first cantilever beam 190. The first cantilever beam 190 having a thickness of 150 nm of the piezoresistive layer 190b has an upper warpage of about 5 μm , and the internal stress balance is ideal. The first cantilever beam 190 having a thickness of 150 nm of the piezoresistive layer 190b has a lower curvature of about 35 μm . Although the lower bending degree of the first cantilever beam 190 can be improved by reducing the thickness of the protective layer 232 to 150 μm , the reduction will bring the neutral axis and the piezoresistive distance closer, and the sensitivity is deteriorated.

In the biochemical sensing, the cantilever beam sensing wafer 10 of each of the foregoing embodiments can first fix the corresponding identification molecules on the respective sensing layers 190c according to the characteristics of the biochemical molecules to be sensed.

Figure 12 is a flow chart of a cantilever beam sensing method in accordance with an embodiment of the present invention. Figure 13A is a schematic illustration of a cantilever beam sensing system in accordance with an embodiment of the present invention. Figure 13B is a schematic view of a cantilever beam sensing wafer in accordance with a fifth embodiment of the present invention. Figure 13C is a schematic illustration of a cantilever beam sensing system in accordance with an embodiment of the present invention.

Referring to Fig. 12, before the measurement is performed, the connection of the pipeline is first performed (step 310).

Referring to FIG. 13A in conjunction with FIGS. 1 through 5 and 8 through 10, in some embodiments, in step 310, the contact pairs 160, 170 of the cantilever sensing wafer 10 are first electrically coupled to the measuring device 20, respectively. . And, the object to be tested 130 and the object to be tested 132 of the cantilever sensing wafer 10 are connected to the sample injecting unit 30.

In some embodiments, referring to Figures 13B and 13C, the contact pairs 160, 170 of the cantilever sensing wafer 10 can be integrated into at least one connector 120 for ease of coupling to the metrology device 20 for ease of measurement. In some embodiments, the connector 120 can be a male connector or a female connector. In some embodiments, the connector 120 is a connector in the form of, for example, a USB (Universal Serial Bus) or RS232.

After the pipeline connection is completed, the temperature effect is measured and corrected (step 320).

The measurement of the temperature effect is the relationship between the measured temperature and the electrical signals of the respective cantilever beams (i.e., the second cantilever beam 180 and the first cantilever beam 190). Here, the temperature cycle of the wafer 10 can be sensed by controlling the cantilever beam, and the change of the electrical signal of each cantilever beam can be extracted, and the electrical signal corresponding to a fixed temperature can be obtained through the recording of the data, and then transmitted through the second time. The regression of the curve finds the relationship between temperature and electrical signal. The electrical signal may be a resistance value or a voltage value of the piezoresistive layer 190b.

In terms of measuring the resistance value, in the measurement of the temperature effect, the electrical signal of the temperature change to the cantilever beam can be as shown in Fig. 14. Moreover, by the regression of the quadratic curve, the relationship between the resistance value ( R _fix ) of the second cantilever beam 180 and the temperature ( T ) is as shown in the following formula 7, and the resistance value of the first cantilever beam 190 ( R _sensor The relationship between the temperature and the temperature is as shown in the following formula VIII.

R _fix = aT ² + bT + c .........

R _sensor = dT ² + eT + f .........

In Equations 7 and 8, a , b , c , d , e, and f are constants.

Prior to detection, pickling and caustic washing of the detection chamber 110 is performed (step 330). Here, the acid washing of the detection chamber 110 may be performed by introducing hydrochloric acid (HCL), and the alkali washing of the detection chamber 110 may be performed by passing sodium hydroxide (NaOH).

Subsequently, the background solution is passed into the detection chamber 110 (step 340). Here, the flow rate can be about 0.6 ml / hr .

When the flow field of the cavity to be detected 110 and the signal measured by the measuring device 20 are both stable, the sample injection unit 30 senses the object to be tested 130 of the wafer 10 via the cantilever beam to have a sample of the object to be tested. It is passed into the detection chamber 110 (step 350).

During the flow of the sample, the measuring device 20 measures the electrical signals of the first cantilever beams 190 (step 360).

Here, the measuring device 20 generates a plurality of electrical signals of each of the first cantilever beams 190 at a specific time interval to obtain a relationship between the electrical signals of the respective first cantilever beams 190 and time. In some embodiments, the metrology device 20 measures the electrical signal changes of each of the first cantilever beams 190 for a predetermined period of time. Here, the predetermined time may be within about 1 hour, and preferably between about 20 minutes and 1 hour. However, this predetermined time may vary depending on the concentration of the sample and the concentration of the identified molecules on the sensing layer 190c. And, during this predetermined time, the measurement of the signal is performed at specific time intervals. For example: take a measurement every 1 minute or 3 minutes.

In some embodiments, the sample injection unit 30 can continuously inject the sample into the object inlet 130 of the cantilever sensing wafer 10 to maintain the sample in the detection chamber 110 during the measurement of the measuring device 20. The flow.

In some embodiments, the object to be tested 130 and the object to be tested 132 of the cantilever sensing wafer 10 can communicate with each other via the sample injecting unit 30 to form a sample loop through the detecting chamber 110. In order to reduce the amount of use of the sample. After the sample injecting unit 30 injects the sample into the object to be tested 130 of the cantilever beam sensing wafer 10, the sample injecting unit 30 can push the sample to flow in the sample circuit.

In some embodiments, referring to Fig. 15, during the flow of the sample, the measuring device 20 also measures the electrical signals of each of the second cantilever beams 180 (step 362). Moreover, in the process of measuring the electrical signals of the first cantilever beams 190, the measuring device 20 performs the operation of calculating the temperature compensation effect of the electrical signals of the first cantilever beams 190 by using the electrical signals of the second cantilever beam 180 (steps). 364).

In the calculation of the temperature compensation effect, the temperature relationship between each cantilever beam and the piezoresistive force is used, and the temperature effect of each cantilever beam is instantaneously compensated by the calculation of the program, thereby eliminating the resistance change caused by the temperature effect, so that It is not affected by temperature changes.

After the electrical signals of the first cantilever beams 190 are obtained, the measuring device 20 filters out at least one effective value from the measured electrical signals of the first cantilever beam 190 based on the threshold (step 370).

In some embodiments, taking the measured resistance value as an example, the measuring device 20 obtains a resistance curve of each of the first cantilever beams 190 with respect to time, as shown in FIG.

Then, the resistance change amount R _rise between the respective first cantilever beams 190 from the initial value R _O to the stable value R _S is calculated, and the calculated resistance change amount R _{rise is} compared with the threshold value.

When the resistance change amount R _{rise is} greater than the threshold, the electrical signal of the first cantilever beam 190 is an effective value.

Next, an average of the filtered effective values is calculated (step 380) to provide processing operations such as interpretation, analysis, and conversion of subsequent signals.

Taking 4 sets of first cantilever beams 191, 192, 193, and 194 to measure 20 mM 8-carbon thiol molecules (biochemical molecules) as an example, the measurement is performed every 3 minutes, and the curve relationship as shown in Fig. 17 can be obtained.

Then, after superimposing the resistance values of the four sets of first cantilever beams 191, 192, 193, 194 (i.e., averaging), a curve Curve as shown in Fig. 18 can be obtained.

Comparing Figures 17 and 18, it can be seen that the noise ratio of the resistance values before and after superposition is increased by about 2.8 times. Wherein, the noise ratio is improved by about 260% by superimposing the resistance value of the first effective cantilever beam 190. Among them, the improvement of the noise ratio is helpful for the processing of interpretation, analysis and conversion of subsequent signals.

In some embodiments, the measurement device 20 can store a conversion table in advance. Therefore, after the average value is obtained, the measuring device 20 can convert the average value into the analyte concentration according to the conversion table (step 390). Moreover, the measuring device 20 can output the converted concentration of the analyte to be displayed on the display screen (step 400) for reference by the user.

In some embodiments, referring to Figures 19 and 20, the cantilever beam sensing wafer 10 is disposed in the temperature control system 40 to control the temperature of the cantilever sensing wafer 10 during the measurement (step 366).

In some embodiments, the temperature control system 40 can be a Temperature Coefficient of Resisitor (TCR). In addition, a thermal grease may be applied to the contact surface of the cantilever beam sensing wafer 10 and the refrigerating wafer temperature control platform to enhance heat conduction between the cantilever beam sensing wafer 10 and the refrigerating wafer temperature control platform.

In some embodiments, measurement device 20 can be a multi-channel data capture system. The multi-channel data capture system can include a switcher and a digital meter. Each channel is electrically connected between a cantilever beam and a switch. The switch provides an electrical connection between the channel and the digital meter. During the measurement, the switch is responsible for switching different channels for measurement by the digital meter. Furthermore, the data obtained by the digital meter can be provided to an analysis software for signal compensation, analysis of effective signals, calculation of the average value, and even conversion of the concentration of the analyte.

In summary, the cantilever beam sensing wafer, the cantilever beam sensing system and the method thereof according to the present invention can read the electrical signals of the cantilever beam without using the Wheatstone bridge, but directly face the respective contacts of the cantilever beam. Take the electrical signals of each cantilever beam and increase the signal strength by superimposing effective electrical signals to facilitate the processing of subsequent signal interpretation, analysis and conversion.

Although the technical content of the present invention has been disclosed in the above preferred embodiments, it is not intended to limit the present invention, and any modifications and refinements made by those skilled in the art without departing from the spirit of the present invention should be Within the scope of the invention, therefore, the scope of the invention is defined by the scope of the appended claims.

10. . . Cantilever beam sensing wafer

20. . . Measuring device

30. . . Sample injection unit

40. . . Temperature control system

100. . . main body

100a. . . The outer surface

100b. . . The outer surface

100c. . . The outer surface

100d. . . The outer surface

101. . . The protective layer

102. . . Base

1021. . . Wafer layer

1023. . . Bottom plate

102a. . . First surface

104. . . Cover

104a. . . First surface

105. . . Through hole

106. . . Through hole

110. . . Detection chamber

112. . . Runner

114. . . Micro slot

114a. . . Micro slot

114b. . . Micro slot

130. . . DUT entrance

132. . . DUT export

140. . . Conductive line

140a. . . Conductive line

140b. . . Conductive line

140c. . . Guide hole

140d. . . Guide hole

150. . . Conductive line

151a. . . Conductive line

151b. . . Conductive line

151c. . . Guide hole

151d. . . Guide hole

152a. . . Conductive line

152b. . . Conductive line

152c. . . Guide hole

152d. . . Guide hole

160. . . Contact pair

160a. . . Second contact

160b. . . Second contact

170. . . Contact pair

171. . . Contact pair

171a. . . First contact

171b. . . First contact

172. . . Contact pair

172a. . . First contact

172b. . . First contact

173. . . Contact pair

174. . . Contact pair

180. . . Second cantilever beam

180b. . . Piezoresistive layer

180d. . . Pressure balance layer

190. . . First cantilever beam

190a. . . Support plate

190b. . . Piezoresistive layer

190c. . . Sensing layer

190d. . . Pressure balance layer

191. . . First cantilever beam

191a. . . Support plate

191b. . . Piezoresistive layer

191c. . . Sensing layer

191d. . . Pressure balance layer

192. . . First cantilever beam

192a. . . Support plate

192b. . . Piezoresistive layer

192c. . . Sensing layer

192d. . . Pressure balance layer

193. . . First cantilever beam

194. . . First cantilever beam

210. . . Substrate

210a. . . Upper surface

210b. . . lower surface

232. . . The protective layer

234. . . The protective layer

250. . . Pressure balance material layer

270. . . Piezoresistive material layer

R _e . . . Reynolds number

H. . . Flow path height

L _e . . . Entrance length

A1. . . Sensing area

A2. . . Coupling area

1 is an exploded perspective view of a cantilever beam sensing wafer according to a first embodiment of the present invention.

2 is a combined schematic view of a cantilever beam sensing wafer according to a first embodiment of the present invention.

Figure 3 is an exploded perspective view of a cantilever beam sensing wafer in accordance with a second embodiment of the present invention.

Figure 4 is a schematic diagram showing the combination of a cantilever beam sensing wafer according to a second embodiment of the present invention.

Fig. 5 is a cross-sectional view taken along line I-I of Figs. 2 and 4.

Figure 6 is a plot of the Reynolds number versus the height of the runner.

Figure 7 is a graph of the relationship between the length of the inlet and the height of the runner.

Figure 8 is an exploded perspective view of a cantilever beam sensing wafer in accordance with a third embodiment of the present invention.

Figure 9 is a schematic diagram showing the combination of a cantilever beam sensing wafer according to a third embodiment of the present invention.

Fig. 10 is a schematic view showing a partial structure of a cantilever beam sensing wafer according to a fourth embodiment of the present invention.

The 11A to 11G drawings are the manufacturing processes of the substrate corresponding to the line II-II in Fig. 10.

Figure 12 is a flow chart of a cantilever beam sensing method in accordance with an embodiment of the present invention.

Figure 13A is a schematic illustration of a cantilever beam sensing system in accordance with an embodiment of the present invention.

Figure 13B is a schematic view of a cantilever beam sensing wafer in accordance with a fifth embodiment of the present invention.

Figure 13C is a schematic illustration of a cantilever beam sensing system in accordance with another embodiment of the present invention.

Figure 14 is a graph showing the relationship between the temperature change and the electrical signal of the cantilever beam.

Figure 15 is a flow chart of a cantilever beam sensing method in accordance with another embodiment of the present invention.

Figure 16 is a graph showing the change in resistance of a cantilever beam with respect to time as measured by an embodiment.

Figure 17 is a graph showing the resistance versus time of a plurality of cantilever beams measured in an embodiment.

Figure 18 is a graph showing the average value versus time of the resistance values of a plurality of cantilever beams measured in an embodiment.

Figure 19 is a schematic illustration of a cantilever beam sensing system in accordance with yet another embodiment of the present invention.

Figure 20 is a flow chart of a cantilever beam sensing method in accordance with yet another embodiment of the present invention.

10. . . Cantilever beam sensing wafer

100. . . main body

100a. . . The outer surface

100b. . . The outer surface

100c. . . The outer surface

100d. . . The outer surface

102. . . Base

104. . . Cover

105. . . Through hole

106. . . Through hole

110. . . Detection chamber

112. . . Runner

114. . . Micro slot

130. . . DUT entrance

132. . . DUT export

140a. . . Conductive line

140b. . . Conductive line

151a. . . Conductive line

151b. . . Conductive line

152a. . . Conductive line

152b. . . Conductive line

160. . . Contact pair

160a. . . Second contact

160b. . . Second contact

171. . . Contact pair

171a. . . First contact

171b. . . First contact

172. . . Contact pair

172a. . . First contact

172b. . . First contact

180. . . Second cantilever beam

191. . . First cantilever beam

192. . . First cantilever beam

Claims (12)

A cantilever beam sensing wafer comprising: a body having a plurality of outer surfaces, an object inlet positioned on one of the outer surfaces, and a test object positioned on one of the outer surfaces An outlet having a detection chamber communicating with the inlet of the object to be tested and the outlet of the object to be tested; and three or more pairs of contacts are insulated from each other on one of the outer surfaces to serve as an external device a plurality of first cantilever beams, suspended and spaced apart from each other on the sidewall of the detection cavity, each electrically connected to one of the pair of contacts to be individually sensed The test object generates a respective electrical signal for providing a superposition process; and a second cantilever beam, which does not have a sensing layer, is electrically connected to one of the pair of contacts, and is disposed on a bottom surface of the detection cavity, The electrical signals required for temperature compensation of the electrical signals of the first cantilever beams are generated. The cantilever beam sensing wafer of claim 1, wherein each of the pair of contacts has two contacts that are insulated from each other, and each of the first cantilever beams comprises: a piezoresistive layer electrically connected to the corresponding one. The contact is paired with the two contacts; and a sensing layer is disposed on the piezoresistive layer. The cantilever beam sensing chip of claim 1, further comprising: a plurality of conductive lines, each of the conductive lines being physically connected to one of the pair of contacts and corresponding to the first cantilever or corresponding Between the second cantilever beams. The cantilever beam sensing wafer of claim 1, wherein the detecting chamber comprises: a first-class channel, two ends of the channel are respectively connected to the object to be tested and the object to be tested; and a micro-slot is located at the a bottom portion of the flow channel; wherein the first cantilever beams extend from the flow channel to the opening of the microchannel. The cantilever beam sensing wafer of claim 1, wherein the pair of contacts are integrated into a connector. A cantilever beam sensing system, comprising: a cantilever beam sensing wafer according to any one of claims 1 to 4; and a measuring device electrically coupled to the pair of contacts to separately measure the Some first cantilever beams The electrical signal of each of the plurality of first cantilever beams, and the average of the plurality of electrical signals of the first cantilever beam, and the electrical signal of the second cantilever beam and the second cantilever beam The electrical signal performs temperature compensation of the electrical signals of the first cantilever beams. The cantilever beam sensing system of claim 6, further comprising: a temperature control system to control the temperature of the cantilever beam sensing wafer. The cantilever beam sensing system of claim 6, wherein the pair of contacts are integrated into a connector, and the measuring device couples the cantilever beam sensing wafer with the connector. A cantilever beam sensing method includes: introducing a sample into a detection cavity of a cantilever beam sensing wafer, wherein a sidewall of the detection cavity of the cantilever beam sensing wafer is suspended and separated from each other The first cantilever beam is measured by a measuring device, wherein the measuring device is electrically connected to each of the first cantilever beams; A plurality of effective values are selected from the plurality of electrical signals of the first cantilever beam; and an average value of the effective values is calculated. The cantilever beam sensing method of claim 9, further comprising: converting the average value to a test object concentration according to a conversion table. The cantilever beam sensing method of claim 9, further comprising: controlling the temperature of the cantilever beam sensing wafer by using a temperature control system. The cantilever beam sensing method of claim 9, wherein the effective value is that the electrical signal of each of the first cantilever beams is changed from an initial value of the initial measurement to a stable value greater than the threshold.