TWI459530B - Touch sensing structure and manufacturing method thereof - Google Patents

Description

Touch sensing structure and manufacturing method thereof

The invention provides a touch sensing structure and a manufacturing method thereof, and provides a bridge wire which can be improved by using a metal material, which is easy to form a lack of bright spots, and can utilize the transparent characteristics to improve the serious influence of the conventional metal bridge wiring. The disadvantage of controlling panel penetration.

According to the current touch panel input mode, including resistive, capacitive, optical, electromagnetic induction, sonic induction, etc.; Touching the surface of the panel with a finger or a sensor pen, and generating a change in the capacitance value inside the panel subjected to the touched position, thereby detecting the position of the touched surface of the panel to achieve the purpose of touch sensing.

Moreover, in order to detect that the user touches the position on the touch panel with a finger or a sensor pen, the manufacturer has developed various capacitive touch sensing structures. For example, the single-layer bridge type touch structure, wherein the bridge wire is made of metal material, the metal bridge wire is easy to form a reflection, so that the bridge point has obvious bright points under visual observation, and the appearance sought by the touch panel will not meet the demand.

The object of the present invention is to provide a bridge structure for a touch panel and a manufacturing method thereof, and to provide a bridge wire which can be fabricated by using a metal material, which is easy to form a reflection, and which is improved by the transparent conductive material to improve the conventional metal bridge. The line appearance highlights defects and improves the production yield of the touch panel.

In order to achieve the above object, the touch panel of the present invention comprises: a transparent substrate, a first transparent conductive layer, an insulating layer and a second transparent conductive layer, wherein the first transparent conductive layer is disposed on the transparent substrate, and is provided a plurality of first sensing pads, a second sensing pad and a plurality of first bridge wires, wherein the plurality of first sensing pads and the plurality of second sensing pads are respectively arranged in the first and second directions, and the plurality of first bridge wires are arranged Electrically connecting the plurality of first sensing pads along the first direction, the insulating layer is provided with a plurality of insulating pads, each insulating pad is relatively located on each of the first bridge wires, and the second transparent conductive layer is provided with a plurality of second bridge wires, each second The bridge wire is disposed on the insulating pad, and is electrically connected to each of the second sensing pads in the second direction, wherein an etching rate of the first transparent conductive layer is smaller than an etching rate of the second transparent conductive layer.

To achieve the above objective, the touch sensing structure of the present invention comprises: a transparent substrate; a first transparent conductive layer, the first transparent conductive layer is located on the transparent substrate, and a plurality of second bridge wires are disposed; the insulating layer is a first transparent conductive layer; a patterned insulating layer, a plurality of insulating pads, each of the insulating pads being located on each of the second bridge wires; and a second transparent conductive layer having a plurality of first sensing pads and a plurality of second a sensing pad and a plurality of first bridge wires, wherein the plurality of first sensing pads and the plurality of second sensing pads are arranged in a staggered array, each first bridge wire is disposed on the insulating pad, and the plurality of first bridge wires are electrically connected in the first direction The plurality of first sensing pads are electrically connected to the plurality of second sensing pads, wherein the second transparent conductive layer has an etching rate greater than an etching rate of the first transparent conductive layer.

In order to achieve the above object, the bridge structure of the touch panel of the present invention and the manufacturing method thereof, wherein the material of the first transparent conductive layer is a crystalline transparent conductive material, a polycrystalline transparent conductive material or a semi-crystalline transparent conductive material. First, the second transparent conductive layer is an amorphous transparent conductive material.

In order to achieve the above object, the bridge structure of the touch panel of the present invention and the manufacturing method thereof, wherein the first transparent conductive layer is a crystalline indium tin oxide, a polycrystalline indium tin oxide or a semicrystalline indium tin oxide. One of the second transparent conductive layers is an amorphous indium tin oxide.

In order to achieve the above object, the bridge structure of the touch panel of the present invention and the manufacturing method thereof, wherein the transparent substrate is a material that can be wound around the curl.

In order to achieve the above object, the bridge structure of the touch panel of the present invention and the manufacturing method thereof, wherein the method for manufacturing the touch panel bridging structure comprises: providing a transparent substrate; forming a first transparent conductive layer on the transparent substrate Forming a first transparent conductive layer, forming a plurality of first sensing pads, a plurality of second sensing pads, and a plurality of first bridge wires, wherein the plurality of first sensing pads and the plurality of second sensing pads are arranged in a staggered array The plurality of first bridge wires are electrically connected to the plurality of first sensing pads in a first direction; forming an insulating layer on the first transparent conductive layer; patterning the insulating layer to form a plurality of insulating pads, wherein the insulating pads are relatively located Forming a second transparent conductive layer on the insulating layer, wherein an etching rate of the second transparent conductive layer is greater than an etching rate of the first transparent conductive layer; and forming a second patterned photoresist layer on the second transparent conductive layer On the layer, the second transparent conductive layer is patterned to form a plurality of second bridge wires, each of the second bridge wires is disposed on the insulating pad, and electrically connected to the second sensing pads in the second direction to form a sense Structure.

In order to achieve the above object, the bridge structure of the touch panel of the present invention and the manufacturing method thereof, wherein the method for manufacturing the touch panel bridging structure comprises: providing a transparent substrate; forming a first transparent conductive layer on the transparent substrate; Forming a first transparent conductive layer to form a plurality of second bridge lines; forming an insulating layer over the first transparent conductive layer; patterning the insulating layer to form a plurality of insulating pads, each insulating pad being respectively disposed on each of the second bridge wires; Forming a second transparent conductive layer on the insulating layer, the etching rate of the second transparent conductive layer is greater than the etching rate of the first transparent conductive layer; forming a second patterned photoresist layer on the second transparent conductive layer, and patterning a second transparent conductive layer, forming a plurality of first sensing pads, a plurality of second sensing pads, and a plurality of first bridge wires, wherein the plurality of first sensing pads and the plurality of second sensing pads are arranged in a staggered array, each of the first bridges The wiring is disposed on the insulating pad, and the plurality of first bridge wires are electrically connected to the plurality of first sensing pads in the first direction, and the plurality of second bridge wires are electrically connected to the plurality of second sensing pads in the second direction to form Test structure.

In order to achieve the above object, the bridge structure of the touch panel of the present invention and the manufacturing method thereof, wherein the first transparent conductive layer may be a crystalline transparent conductive material, a polycrystalline transparent conductive material or a semi-crystalline transparent conductive material, and a second The transparent conductive layer may be an amorphous transparent conductive material.

In order to achieve the above object, the bridge structure of the touch panel of the present invention and the manufacturing method thereof further include: forming a metal layer on the transparent substrate; forming a third patterned photoresist layer on the metal layer; and patterning The metal layer forms a plurality of terminal lines, and the plurality of terminal lines are electrically connected to the sensing structure.

In order to achieve the above object, the bridging structure of the touch panel of the present invention and the manufacturing method thereof, after patterning the metal layer, further comprises simultaneously stripping the second patterned photoresist layer and the third patterned photoresist layer.

In order to achieve the above object, the bridge structure of the touch panel of the present invention and the manufacturing method thereof, wherein the transparent substrate is a material capable of winding, and each process is performed by a roll-to-roll technique.

1 is a schematic view of a bridge structure of a touch panel of the present invention, and FIG. 2 is a cross-sectional view of a bridge structure of the touch panel of the present invention. The touch panel 1 of the present invention includes a transparent substrate 10 and a first transparent layer. The conductive layer 20, the insulating layer 30, and the second transparent conductive layer 40, wherein the transparent substrate 10 is made of a material that can be wound around the curl, and can be curled into a roll shape. The material of the transparent substrate 10 may be, for example, one of PEN, PET, PES, a wrapable glass, PMMA, PC or PI, or a multi-layer composite material of the above materials, and a plurality of layers may be formed on the above material. The substrate of the stacked structure, the multilayer transparent stack structure may be, for example, an anti-reflective layer or an anti-glare layer. Or the transparent substrate 10 is also tempered glass, glass or plastic.

The first transparent conductive layer 20 is disposed on the transparent substrate 10, and is provided with a plurality of first sensing pads 21, a second sensing pad 22, and a plurality of first bridge wires 23, wherein the plurality of first sensing pads 21 and the plurality The second sensing pads 22 are arranged in a staggered array, and the plurality of first bridge wires 23 are electrically connected to the plurality of first sensing pads 21 along the first direction X.

The insulating layer 30 is provided with a plurality of insulating pads 31, and each of the insulating pads 31 is located opposite to each of the first bridge wires 23. The insulating pad 31 is made of an insulating material, and may be, for example, a dry film photoresist, a liquid photoresist, SiO 2 , SiONx, a high molecular polymer or a ceramic.

The second transparent conductive layer 40 is provided with a plurality of second bridge wires 41. Each of the second bridge wires 41 is disposed on the insulating pad 31. The second bridge wire 41 is electrically insulated from the first bridge wire 23 and is electrically connected in the second direction. Each of the first and second transparent conductive layers 20, 40 is connected to, for example, indium tin oxide, indium oxide, zinc oxide, indium zinc oxide, zinc oxide doped with aluminum, And one of the tin oxide doped with antimony or a mixture thereof, and the etching rate of the first transparent conductive layer 20 is smaller than the etching rate of the second transparent conductive layer 40. For example, the material of the first transparent conductive layer 20 may be crystallized. One of the transparent conductive material, the polycrystalline transparent conductive material or the semi-crystalline transparent conductive material, the second transparent conductive layer 40 may be an amorphous transparent conductive material, and the semi-crystalline transparent conductive material means that some of the materials have Crystalline transparent conductive material or polycrystalline transparent conductive material. The crystalline indium tin oxide, the polycrystalline indium tin oxide, and the semicrystalline indium tin oxide represent the 2Θ measurement (2Θscan) measured by an X-ray diffractometer (XRD). 222) The diffraction peak in the direction or (400) direction, and the crystal or polymorph of other transparent conductive materials are also measured by 2Θ, but different diffraction positions according to different materials. The semi-crystalline indium tin oxide means that a part of the material has a crystalline indium tin oxide or a polycrystalline indium tin oxide.

Please refer to FIGS. 3a to 3i to provide a method for manufacturing the touch sensing structure as described above according to an embodiment of the present invention. As shown in FIG. 3a, the transparent substrate 10 is provided, and the first transparent conductive layer 20 is formed on the transparent substrate 10. The first transparent conductive layer 20 may be a crystalline transparent conductive material, a polycrystalline transparent conductive material or One of the semi-crystalline transparent conductive materials, as shown, covers the first patterned photoresist layer 51 on the first transparent conductive layer 20, and patterns the first transparent conductive layer 20, and removes the first patterned light. The resistive layer 51 is formed to form a plurality of first sensing pads 21, a plurality of second sensing pads 22, and a plurality of first bridge wires 23, wherein the plurality of first sensing pads 21 and the plurality of second sensing pads 22 are arranged in a staggered array. The plurality of first bridge wires 23 electrically connect the plurality of first sensing pads 22 along the first direction X, as shown in FIGS. 3b and 3c.

Forming the insulating layer 30 on the first transparent conductive layer, as shown in FIG. 3d, patterning the insulating layer 30 to form a plurality of insulating pads 31. As shown in FIG. 3e, the insulating pads 31 are relatively located first. On the bridge wire 23 . The insulating pad 31 is made of an insulating material, and may be, for example, a dry film photoresist, a liquid photoresist, SiO 2 , SiONx, a high molecular polymer or a ceramic.

Next, a second transparent conductive layer 40 is formed on the insulating layer 30. As shown in FIG. 3e, when the same etching solution is used, the etching rate of the second transparent conductive layer 40 is greater than that of the first transparent conductive layer 20. Etching rate, and the second transparent conductive layer 40 may be an amorphous transparent conductive material; and forming a second patterned photoresist layer 52 on the second transparent conductive layer 40, as shown in the 3g, 3h, 3i, The second transparent conductive layer 40 is patterned to form a plurality of second bridge wires 41. Each of the second bridge wires 41 is disposed on the insulating pad 31, and electrically connected to the second sensing pads 22 in the second direction Y to form a sense. The structure 200 is measured. In one embodiment, the second transparent conductive layer 40 is etched using an indium tin oxide (ITO) etching solution, since the first transparent conductive layer 20 is a crystalline indium tin oxide, a polycrystalline indium tin oxide, or a semicrystalline type. One of the indium tin oxides, the second transparent conductive layer 40 is an amorphous indium tin oxide, so the etching rate of the ITO etching solution for the second transparent conductive layer 40 is greater or much larger than the etching rate of the first transparent conductive layer 20 . At the end of etching the second transparent conductive layer 40, since the first transparent conductive layer 20 is relatively resistant to erosion by the ITO etching solution, the plurality of first sensing pads 21, the second sensing pads 22, and the plurality of first bridge wires are not caused. 23 damage, which in turn improves the yield of the touch panel. The ITO etching solution may be, for example, a ferric chloride etching solution or hydrochloric acid, and the etching time for the crystalline, polycrystalline or semi-crystalline indium tin oxide may be, for example, 30 seconds to 90 seconds, and for amorphous indium tin oxide. The etching time of the object can be, for example, 10 seconds to 15 seconds, so that the ITO etching solution can achieve selective etching effect for different structures of indium tin oxide.

In addition, please refer to FIG. 4a to FIG. 4c, which illustrate a manufacturing method of the touch sensing structure as described above according to another embodiment of the present invention. As shown in FIG. 4a, the transparent substrate 10 is provided, and the first transparent conductive layer 20 is formed on the transparent substrate 10. The first transparent conductive layer 20 may be a crystalline transparent conductive material or a polycrystalline transparent conductive material. And patterning the first transparent conductive layer 20 to form a plurality of second bridge lines 24; forming an insulating layer (not shown) over the first transparent conductive layer, patterning the insulating layer, forming a plurality of insulating pads 31, and insulating each The pads 31 are respectively disposed on the second bridge wires 24, as shown in FIG. 4b; forming a second transparent conductive layer (not shown) on the insulating layer, and the etching rate of the second transparent conductive layer is greater than the first The etching rate of the transparent conductive layer, and the second transparent conductive layer may be an amorphous transparent conductive material; forming a second patterned photoresist layer (not shown) over the second transparent conductive layer, and patterning the second transparent conductive layer a layer, as shown in FIG. 4c, forming a plurality of first sensing pads 42, a plurality of second sensing pads 43, and a plurality of first bridge wires 44, wherein the plurality of first sensing pads 42 and the plurality of second sensing pads 43 are mutually Arranged in a staggered array, each of the first bridge wires 44 is disposed on the insulating pad 31, plural A bridge connection 44 in the first direction X is electrically connected to a plurality of first sensing pads 42, a plurality of second direction Y is electrically connected to a second bridge line 24 along a plurality of second sensing pads 43, the sensing structure 200 is formed.

In each of the above embodiments, the transparent substrate is a structure that can be wound and rolled, and each process is performed by a roll-to-roll technique; wherein the first transparent conductive layer 20 is made of a crystalline transparent conductive material, a polycrystalline transparent conductive material, or One of the semi-crystalline transparent conductive materials, the second transparent conductive layer 40 is made of an amorphous transparent conductive material, so that the etching rate of the second transparent conductive layer 40 is greater than the etching rate of the first transparent conductive layer 20, so the pattern is performed. When the second transparent conductive layer 40 is formed, the first transparent conductive layer 20 is not damaged, and the transparent conductive layer can be used to improve the defects of the conventional metal bridge wiring affecting the transmittance and appearance of the touch panel.

Furthermore, the manufacturing method of the present invention further comprises: forming a metal layer 60 on the transparent substrate 10, as shown in FIG. 5a, taking the first embodiment as an example; forming a third patterned photoresist layer 53 on the metal layer 60. And the patterned metal layer 60 forms a plurality of terminal lines 61, and the plurality of terminal lines 61 are electrically connected to the sensing structure 200, as shown in FIGS. 5b and 5c, wherein after the metal layer 60 is patterned, the method further includes simultaneously removing The second patterned photoresist layer 52 and the third patterned photoresist layer 53 form a touch sensing structure.

As in the above embodiments, the transparent substrate 10 is made of a flexible material, and each process is carried out in a roll-to-roll technique to achieve maximum mass production efficiency.

Although the present invention has been disclosed above by way of example, it is not intended to limit the invention. The scope of the present invention is defined by the scope of the claims, and the scope of the invention is intended to be limited by the scope of the invention.

X. . . First direction

Y. . . Second direction

1. . . Touch panel

10. . . Transparent substrate

200. . . Sensing structure

20. . . First transparent conductive layer

twenty one. . . First sensing pad

twenty two. . . Second sensing pad

twenty three. . . First bridge wiring

twenty four. . . Second bridge wiring

30. . . Insulation

31. . . Insulation pad

40. . . Second transparent conductive layer

41. . . Second bridge wiring

42. . . First sensing pad

43. . . Second sensing pad

44. . . First bridge wiring

51. . . First patterned photoresist layer

52. . . Second patterned photoresist layer

60. . . Metal layer

61. . . Terminal line

53. . . Third patterned photoresist layer

FIG. 1 is a schematic structural view of a touch sensing structure of the present invention.

2 is a cross-sectional view showing the structure of the touch sensing structure of the present invention.

3a to 3i are schematic views showing a method of manufacturing a touch sensing structure according to an embodiment of the present invention.

4a to 4c are schematic views showing a method of manufacturing a touch sensing structure according to another embodiment of the present invention.

5a to 5c are schematic views showing a method of manufacturing a touch sensing structure according to still another embodiment of the present invention.

X. . . First direction

Y. . . Second direction

1. . . Touch panel

10. . . Transparent substrate

20. . . First transparent conductive layer

twenty one. . . First sensing pad

twenty two. . . Second sensing pad

twenty three. . . First bridge wiring

31. . . Insulation pad

40. . . Second transparent conductive layer

41. . . Second bridge wiring

Claims (11)

A touch sensing structure includes: a transparent substrate; a first transparent conductive layer, the first transparent conductive layer is located on the transparent substrate, and is provided with a plurality of first sensing pads and a plurality of second sensing layers a pad and a plurality of first bridge wires, wherein the first sensing pads and the second sensing pads are arranged in a staggered array, and the first bridge wires are electrically connected to the first sensing pads along a first direction An insulating layer is provided with a plurality of insulating pads, each insulating pad is oppositely located on each of the first bridge wires; and a second transparent conductive layer is provided with a plurality of second bridge wires, each of the second bridge wires is disposed on the insulating pad, and Electrically connecting the second sensing pads in a second direction, wherein the first transparent conductive layer is made of one of a crystalline transparent conductive material, a polycrystalline transparent conductive material, or a semi-crystalline transparent conductive material, or The second transparent conductive layer is an amorphous transparent conductive material, and an etching rate of the second transparent conductive layer is greater than an etching rate of the first transparent conductive layer. A touch sensing structure includes: a transparent substrate; a first transparent conductive layer, the first transparent conductive layer is disposed on the transparent substrate, and a plurality of second bridge wires are disposed; and an insulating layer is disposed a plurality of insulating pads, each insulating pad is opposite to each of the second bridge wires; and a second transparent conductive layer is provided with a plurality of first sensing pads and a plurality of second senses a pad and a plurality of first bridge wires, wherein the first sensing pads and the second sensing pads are arranged in a staggered array, and each of the first bridge wires is disposed on the insulating pad, and the first bridge wires are along The first direction is electrically connected to the first sensing pads, and the second bridges are electrically connected to the second sensing pads in a second direction, wherein the first transparent conductive layer is made of a crystalline type One of a transparent conductive material, a polycrystalline transparent conductive material or a semi-crystalline transparent conductive material, or the second transparent conductive layer is an amorphous transparent conductive material, and the etching rate of the second transparent conductive layer is greater than the first Etching rate of the transparent conductive layer. The touch sensing structure according to claim 1 or 2, wherein the first transparent conductive layer is a crystalline indium tin oxide, a polycrystalline indium tin oxide or a semicrystalline indium tin oxide. The second transparent conductive layer is amorphous indium tin oxide. The touch sensing structure of claim 1 or 2, wherein the transparent substrate is a material that can be wound around the curl. A method for manufacturing a touch sensing structure includes: providing a transparent substrate; forming a first transparent conductive layer on the transparent substrate; patterning the first transparent conductive layer to form a plurality of first sensing pads a plurality of second sensing pads and a plurality of first bridge wires, wherein the first sensing pads and the second sensing pads are arranged in a staggered array, and the first bridge wires are electrically connected in a first direction The first sensing pads; Forming an insulating layer; patterning the insulating layer to form a plurality of insulating pads, each insulating pad is located on each of the first bridge wires; forming a second transparent conductive layer on the insulating layer, wherein the second transparent conductive layer The etching rate is greater than the etching rate of the first transparent conductive layer; and forming a second patterned photoresist layer over the second transparent conductive layer, patterning the second transparent conductive layer to form a plurality of second bridge lines, Each of the second bridge wires is disposed on the insulating pad, and electrically connected to each of the second sensing pads in a second direction to form a sensing structure. A method for manufacturing a touch sensing structure includes: providing a transparent substrate; forming a first transparent conductive layer on the transparent substrate; patterning the first transparent conductive layer to form a plurality of second bridge lines; forming a Insulating layer; patterning the insulating layer to form a plurality of insulating pads, each insulating pad is respectively disposed on each of the second bridge wires; forming a second transparent conductive layer on the insulating layer, and etching the second transparent conductive layer The rate is greater than the etching rate of the first transparent conductive layer; forming a second patterned photoresist layer over the second transparent conductive layer, patterning the second transparent conductive layer to form a plurality of first sensing pads, and a plurality of a second sensing pad and a plurality of first bridge wires, wherein the first sensing pads and the second sensing pads are arranged in a staggered array, and each of the first bridge wires is disposed on the insulating pad. The first bridge wires are electrically connected to the first sensing pads in a first direction, and the second bridge wires are electrically connected to the second sensing pads in a second direction to form a sensing structure. . The method for manufacturing a touch sensing structure according to the fifth or sixth aspect of the invention, wherein the first transparent conductive layer is a crystalline transparent conductive material, a polycrystalline transparent conductive material or a semi-crystalline transparent conductive material. In one of the two, the second transparent conductive layer is an amorphous transparent conductive material. The method for manufacturing a touch sensing structure according to claim 5, wherein the first transparent conductive layer is a crystalline indium tin oxide, a polycrystalline indium tin oxide or a semicrystalline type. One of the indium tin oxides, the second transparent conductive layer being an amorphous indium tin oxide. The method for manufacturing a touch sensing structure according to the fifth or sixth aspect of the invention, further comprising: forming a metal layer on the transparent substrate; forming a third patterned photoresist layer on the metal Above the layer; and patterning the metal layer to form a plurality of terminal lines electrically connected to the sensing structure. The method of manufacturing the touch sensing structure of claim 9, wherein after the patterning the metal layer, the second patterned photoresist layer and the third patterned photoresist layer are simultaneously stripped. The method for manufacturing a touch sensing structure according to claim 5, wherein the transparent substrate is a material that can be wound and is subjected to a roll-to-roll technique for each process.