TWI458074B - Light-emitting device with light-emitting diode of composite phosphor layer - Google Patents
Light-emitting device with light-emitting diode of composite phosphor layer Download PDFInfo
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本發明係關於發光裝置,特別是關於具有發光二極體的發光裝置。The present invention relates to a light emitting device, and more particularly to a light emitting device having a light emitting diode.
近幾年來,藍光發光二極體(LED)常用於與螢光材料相結合而產生可發出白光的發光裝置。此發光裝置常用於LED顯示器,背光源、交通號誌、照明開關、指示器等。而且,此種發光裝置因於其中作為發光源的發光二極體(LED)僅需要較低的電流即可運作,故相較於習知的白熾燈或螢光燈,其可大幅度地減少能耗。此外,相較於習知的白熾燈或螢光燈的使用壽命,以發光二極體為發光源的發光裝置可具有較長的使用壽命。In recent years, blue light-emitting diodes (LEDs) have been commonly used in combination with fluorescent materials to produce light-emitting devices that emit white light. This illuminating device is commonly used in LED displays, backlights, traffic signs, lighting switches, indicators, and the like. Moreover, such a light-emitting device can operate only because a light-emitting diode (LED) as a light-emitting source requires only a low current, so that it can be greatly reduced compared to conventional incandescent lamps or fluorescent lamps. Energy consumption. In addition, the illuminating device using the illuminating diode as the illuminating source can have a longer service life than the conventional incandescent lamp or fluorescent lamp.
圖1係習知使用藍光發光二極體與混合螢光材料相結合之發光裝置的示意圖。在基板101上設置有一藍光發光二極體102,並在藍光發光二極體102上連接一輸入端子105,用以提供該發光裝置發光的電能。在藍光發光二極體102覆蓋一層混合螢光材料塗層103(內含能受藍光發光二極體102激發而發出紅光的螢光材料與發出綠光的螢光材料)。最後再覆蓋上透明半球形封裝罩104以保護內部藍光發光二極體102與混合螢光材料塗層103免於水氣的影響。然而,如此設計的發光裝置常因螢光材料塗層103中受藍光發光二極體激發的綠光會再次被可發出紅色螢光的材料所吸收而導致綠光發光效率(即每瓦可發出的流明,lumens/W)降低,從而影響整個裝置的發光效率。1 is a schematic view of a conventional light-emitting device using a blue light-emitting diode in combination with a mixed fluorescent material. A blue light emitting diode 102 is disposed on the substrate 101, and an input terminal 105 is connected to the blue light emitting diode 102 for providing electrical energy for the light emitting device to emit light. The blue light emitting diode 102 is covered with a mixed fluorescent material coating 103 (containing a fluorescent material which is excited by the blue light emitting diode 102 to emit red light and a fluorescent material which emits green light). Finally, a transparent hemispherical encapsulation cover 104 is overlaid to protect the inner blue light emitting diode 102 and the mixed phosphor coating 103 from moisture. However, the illuminating device thus designed is often that the green light excited by the blue light emitting diode in the fluorescent material coating layer 103 is again absorbed by the material capable of emitting red fluorescent light, resulting in green light emitting efficiency (ie, can be emitted per watt. The lumens, lumens/W) are reduced, thereby affecting the luminous efficiency of the entire device.
針對綠光會被可發出紅色螢光之材料吸收的問題,美國專利第7250715號將可發出黃綠光的螢光材料與可發出紅色螢光的材料分開且同時覆蓋於同一藍光發光二極體上。如圖2所示,藍光發光二極體202置於具有反射內面的反射杯200中,且可發出黃綠光的螢光材料層204與可發出紅色螢光的材料層206毗鄰地覆蓋於藍光發光二極體202上。藉由螢光材料層204與206分別受激而發出黃綠光與紅光,而可解決上述綠光被吸收的問題。然而,因為螢光材料層204與206係覆蓋於同一藍光發光二極體202上,常因受限於螢光材料層204與206彼此的牽制而無法將發光效率提至最高。換言之,若為提高螢光材料層204的發光效率而選擇一藍光發光二極體,此藍光發光二極體不一定可使螢光材料層206得到最佳的發光效率,反之亦然。In view of the problem that green light is absorbed by a material that emits red fluorescent light, U.S. Patent No. 7,250,715 separates a fluorescent material that emits yellow-green light from a material that emits red fluorescent light while covering the same blue light-emitting diode. As shown in FIG. 2, the blue light emitting diode 202 is placed in the reflective cup 200 having the reflective inner surface, and the fluorescent material layer 204 which can emit yellow-green light is covered with the blue light emitting adjacent to the material layer 206 which can emit red fluorescent light. On the diode 202. The yellow light and red light are emitted by the phosphor layers 204 and 206, respectively, to solve the problem that the green light is absorbed. However, because the phosphor layers 204 and 206 are overlaid on the same blue LED 202, the luminous efficiency is often not maximized due to the confinement of the phosphor layers 204 and 206 to each other. In other words, if a blue light emitting diode is selected to increase the luminous efficiency of the fluorescent material layer 204, the blue light emitting diode does not necessarily provide the fluorescent material layer 206 with an optimum luminous efficiency, and vice versa.
考慮上述情況後而構思出本發明,其中本發明的主題在於將習知混合螢光材料塗層分成至少兩組具有不同螢光主波長(即不同顏色)的螢光材料塗層,其可個別地受至少兩組藍光發光二極體中對應的發光二極體之激發而發出具有不同螢光主波長的螢光。除了可解決上述綠光被吸收的問題之外,可依使用上的需求與目的分別選擇發光二極體與螢光材料塗層的最佳搭配而使發光裝置的發光效率最大,且配合適當的電路設計、操作IC與電源供應,使此至少兩組藍光發光二極體通以相同或不相同電流,而各別激發對應的螢光材料塗層,造成在單一發光裝置中可針對使用環境、需求、時間等發出不同色溫的白光。The present invention has been conceived in view of the above circumstances, wherein the subject matter of the present invention is to divide a conventional mixed phosphor coating into at least two sets of phosphor coatings having different fluorescent main wavelengths (i.e., different colors), which may be individually Fluorescence with different fluorescent main wavelengths is emitted by excitation of corresponding light-emitting diodes of at least two sets of blue light-emitting diodes. In addition to solving the problem that the green light is absorbed, the optimal combination of the light-emitting diode and the fluorescent material coating can be selected according to the requirements and the purpose of use, so that the luminous efficiency of the light-emitting device is maximized, and the appropriate The circuit design, the operation IC, and the power supply enable the at least two sets of blue light-emitting diodes to pass the same or different currents, and each of the corresponding fluorescent material coatings is excited, so that the single light-emitting device can be used for the environment, White light of different color temperatures, such as demand and time.
本申請案將說明一種具有複合螢光體層之發光二極體的發光裝置,該發光裝置包括可發射360nm至490nm範圍內之光波峰值波長的複數組發光二極體、以及此複數組發光二極體上所覆蓋的複數組螢光體層。此複數組發光二極體中的至少兩組彼此具有不同的發光峰值波長。此複數組螢光體層中的至少一組螢光體層的螢光主波長係在500nm至580m的範圍內,而複數組螢光體層中的至少另一組螢光體層的螢光主波長係在590nm至650nm的範圍內。熟悉本技藝者將理解到,依據眾所周知且所接受的意義,『主波長』意指光譜的感覺色,即產生最相似於可見光光源所察覺之色感的單一光波長;而『峰值波長』意指在光源之光譜功率分布中帶有最大功率的光譜線。本發明的發光裝置藉由混合該複數組發光二極體所發出的光與該複數組螢光體層受發光二極體所激發的螢光而發出白光。The present application will describe a light-emitting device having a light-emitting diode of a composite phosphor layer, the light-emitting device comprising a complex array of light-emitting diodes capable of emitting a peak wavelength of light waves in the range of 360 nm to 490 nm, and the complex array of light-emitting diodes A complex array of phosphor layers covered by the body. At least two of the plurality of complex array light-emitting diodes have different emission peak wavelengths from each other. The fluorescent main wavelength of at least one of the phosphor layers of the complex array phosphor layer is in the range of 500 nm to 580 m, and the fluorescent main wavelength of at least one other of the plurality of phosphor layers in the complex array phosphor layer is In the range of 590 nm to 650 nm. It will be understood by those skilled in the art that, according to the well-known and accepted meaning, "principal wavelength" means the perceived color of the spectrum, ie, the single wavelength of light that is most similar to the perceived color perception of the visible light source; Refers to the spectral line with the greatest power in the spectral power distribution of the source. The light-emitting device of the present invention emits white light by mixing the light emitted by the complex array of light-emitting diodes and the phosphor of the complex array of phosphor layers excited by the light-emitting diodes.
本發明之其他目的及優點由隨後之舉例說明及隨附之相對應圖式當可更加明白。Other objects and advantages of the present invention will be apparent from the following description and accompanying drawings.
本發明之實施例將參考隨附圖式來說明,且該圖式亦視作該詳細說明之一部分。Embodiments of the present invention will be described with reference to the accompanying drawings, and the drawings are also considered as a part of the detailed description.
於以下描述中,為提供本發明之徹底了解而闡明眾多的具體實施例說明。然而,對於熟悉本技藝者,明顯的是,不用這些特定細節的部分或全部即可實行本發明。在其他例子中,為了避免混淆本發明,而不進一步詳述熟知的處理操作。In the following description, numerous specific embodiments are set forth in the description It will be apparent to those skilled in the art, however, that the invention may be practiced without some or all of these specific details. In other instances, well known processing operations have not been described in detail in order to avoid obscuring the present invention.
為了便於描述,在下述實施例與隨附圖式中,均以兩組發光二極體與兩組螢光體層分別代表發光裝置內之發光二極體組的組數與螢光體層組的組數。然而,在本發明之實施例與隨附圖式中,發光裝置內的兩組發光二極體與兩組螢光體層應被視為舉例性而非限制性。換言之,在本發明之實施例中,發光裝置內之發光二極體組的組數可為二或多組以上,且位於發光二極體組上之螢光體層組的組數可為二或多組以上。For convenience of description, in the following embodiments and the accompanying drawings, two sets of light-emitting diodes and two sets of phosphor layers respectively represent the group number of the light-emitting diode groups and the group of the phosphor layer group in the light-emitting device. number. However, in the embodiments of the present invention and the accompanying drawings, two sets of light-emitting diodes and two sets of phosphor layers in the light-emitting device should be considered as illustrative and not limiting. In other words, in the embodiment of the present invention, the number of groups of the light-emitting diode groups in the light-emitting device may be two or more groups, and the number of groups of the phosphor layer groups on the light-emitting diode group may be two or More than one group.
圖3A係依據本發明之實施例的發光裝置的橫剖面視圖。數字300表示具有反射內面的內凹結構(以下通稱為反射杯)。在反射杯300內設置第一組發光二極體302與第二組發光二極體304。第一組發光二極體302與第二組發光二極體304係選自下述由III-V族元素所構成的化合物:氮化鎵(GaN)、氮化鋁(AlN)、氮化銦(InN)、氮化鎵鋁(AlGaN)、以及氮化銦鎵(InGaN),但不限於此。第一組發光二極體302與第二組發光二極體304所發射的峰值波長可個別分佈在360nm至490nm的範圍內,且此兩組發光二極體302與304可具有不同的峰值波長。3A is a cross-sectional view of a light emitting device in accordance with an embodiment of the present invention. Numeral 300 denotes a concave structure having a reflective inner surface (hereinafter collectively referred to as a reflective cup). A first group of light emitting diodes 302 and a second group of light emitting diodes 304 are disposed in the reflective cup 300. The first group of light-emitting diodes 302 and the second group of light-emitting diodes 304 are selected from the group consisting of the following compounds consisting of group III-V elements: gallium nitride (GaN), aluminum nitride (AlN), indium nitride. (InN), aluminum gallium nitride (AlGaN), and indium gallium nitride (InGaN), but are not limited thereto. The peak wavelengths emitted by the first group of light-emitting diodes 302 and the second group of light-emitting diodes 304 may be individually distributed in the range of 360 nm to 490 nm, and the two sets of light-emitting diodes 302 and 304 may have different peak wavelengths. .
接著,使輸入端子(未顯示)分別連接至第一組發光二極體302與第二組發光二極體304,以提供第一組發光二極體302與第二組發光二極體304發光所需的電能。在第一組發光二極體302與第二組發光二極體304上分別覆蓋第一組螢光體層306與第二組螢光體層308,其中第一組螢光體層306與第二組螢光體層308的重疊部分較佳係減至最少,最好係毗鄰接觸而不重疊。第一組螢光體層306與第二組螢光體層308可為單一螢光層或為多重螢光層,且第一組螢光體層360與第二組螢光體層308的表面可為半球形、凸形、或平面。參照圖3B與3C,第一組螢光體層306會因為第一組發光二極體302所發出的光而受到激發,進而發出主波長在500nm至580m之範圍內的螢光;而第二組螢光體層308會因為第二組發光二極體304所發出的光而受到激發,進而發出主波長在590nm至650nm之範圍內的螢光。Next, an input terminal (not shown) is respectively connected to the first group of LEDs 302 and the second group of LEDs 304 to provide illumination of the first group of LEDs 302 and the second group of LEDs 304. The required electrical energy. The first group of phosphor layers 306 and the second group of phosphor layers 308 are respectively covered on the first group of LEDs 302 and the second group of LEDs 304, wherein the first group of phosphor layers 306 and the second group of phosphors The overlapping portions of the photocorporeal layer 308 are preferably minimized, preferably adjacent to each other without overlapping. The first set of phosphor layers 306 and the second set of phosphor layers 308 can be a single phosphor layer or a multiple phosphor layer, and the surfaces of the first set of phosphor layers 360 and the second set of phosphor layers 308 can be hemispherical. , convex, or flat. Referring to FIGS. 3B and 3C, the first set of phosphor layers 306 are excited by the light emitted by the first group of LEDs 302, thereby emitting fluorescence having a dominant wavelength in the range of 500 nm to 580 m; The phosphor layer 308 is excited by the light emitted by the second group of light-emitting diodes 304, thereby emitting fluorescence having a dominant wavelength in the range of 590 nm to 650 nm.
接著再次參考圖3A,吾人可設置透明層310,以包覆第一組發光二極體302、第二組發光二極體304、第一組螢光體層306、以及第二組螢光體層308,使該等元件免於受到水氣的影響。透明層310可包括下列至少其中之一:例如環氧樹脂(epoxy)、矽氧樹脂(silicone)、聚亞醯胺樹脂(polyimide)、丙烯酸樹脂(acryl)、聚碳酸酯(PC,polycarbonate)、或聚對二甲苯(parylene)的透明高分子材料;以及例如石英或玻璃的透明材料。而且,透明層310可為單一層或多層結構。最後在透明層310上覆蓋擴散層312,而使第一組發光二極體302及第二組發光二極體304所發出的光與第一組螢光體層306及第二組螢光體層308受激發所發出的螢光更均勻地混合而產生白光。再者,透明層310的另一個功能為:可使自透明層310與其上層物質(例如,擴散層312)之介面因折射係數不同或受層間粒狀分子影響而反射的光,具有較大的機率射向反射杯300的反射內面,而非直接被第一組螢光體層306與第二組螢光體層308吸收,從而提高發光效率。此外,反射杯300可將自發光二極體所發出的光或在此發光二極體之上的結構介面中所反射的光折向出光方向(如箭頭所示),從而增加發光效率。Referring again to FIG. 3A, a transparent layer 310 can be disposed to cover the first set of light emitting diodes 302, the second set of light emitting diodes 304, the first set of phosphor layers 306, and the second set of phosphor layers 308. To protect these components from moisture. The transparent layer 310 may include at least one of the following: for example, epoxy, silicone, polyimide, acryl, polycarbonate, Or a transparent polymeric material of parylene; and a transparent material such as quartz or glass. Moreover, the transparent layer 310 can be a single layer or a multilayer structure. Finally, the transparent layer 310 is covered with the diffusion layer 312, and the light emitted by the first group of LEDs 302 and the second group of LEDs 304 is combined with the first group of phosphor layers 306 and the second group of phosphor layers 308. The fluorescent light emitted by the excitation is more uniformly mixed to produce white light. Furthermore, another function of the transparent layer 310 is to allow the interface between the transparent layer 310 and the upper layer material (for example, the diffusion layer 312) to be reflected by the refractive index differently or affected by the interlayer granular molecules, and has a larger The probability is directed toward the reflective inner surface of the reflector cup 300 rather than being directly absorbed by the first set of phosphor layers 306 and the second set of phosphor layers 308, thereby increasing luminous efficiency. In addition, the reflective cup 300 can deflect the light emitted from the light-emitting diode or the light reflected in the structural interface above the light-emitting diode to the light-emitting direction (as indicated by the arrow), thereby increasing the luminous efficiency.
圖4係依據本發明之實施例之另一發光裝置的橫剖面視圖。與圖3A之發光裝置的不同點在於透明層310與擴散層312之間增加抗反射塗層(ARC,anti-reflective coating)311。吾人可使用旋轉塗佈法(spin-coating)、浸漬塗覆法(dip-coating)、化學氣相沈積法、熱蒸鍍法、以及電子束蒸鍍法(e-beam evaporation)至少其中之一來形成抗反射塗層311。抗反射塗層311可例如包括但不限於下列至少其中之一:硝化纖維素(nitrocellulose)、纖維素酯(Cellulose esters)、醋酸纖維素(cellulose acetate)、醋酸丁酸纖維素(cellulose acetate butyrate)、鐵氟龍(Teflon)、氟樹脂(Cytop)、SiO2 、SiNx、SiOx Ny 、TiO2 、MgO,或MgF2 的透明層。抗反射塗層311可用以使反射杯300內所產生的光(包括第一組發光二極體302及第二組發光二極體304所發出的光、第一組螢光體層306及第二組螢光體層308受激發所發出的螢光、以及自反射杯300所反射的光)通過,且使擴散層312中受到層間粒狀分子影響而散射的光能夠在擴散層312與抗反射塗層311之間的介面上再次折回出光方向(如箭頭所示),從而增加發光裝置的發光效率。4 is a cross-sectional view of another light emitting device in accordance with an embodiment of the present invention. The difference from the light-emitting device of FIG. 3A is that an anti-reflective coating (ARC) 311 is added between the transparent layer 310 and the diffusion layer 312. We can use at least one of spin-coating, dip-coating, chemical vapor deposition, thermal evaporation, and e-beam evaporation. An anti-reflection coating 311 is formed. The anti-reflective coating 311 may include, for example but not limited to, at least one of the following: nitrocellulose, Cellulose esters, cellulose acetate, cellulose acetate butyrate A transparent layer of Teflon, Cytop, SiO 2 , SiNx, SiO x N y , TiO 2 , MgO, or MgF 2 . The anti-reflective coating 311 can be used to make the light generated in the reflective cup 300 (including the light emitted by the first group of LEDs 302 and the second group of LEDs 304, the first group of phosphor layers 306 and the second The group of phosphor layers 308 are excited by the fluorescence emitted by the excitation and the light reflected from the reflective cup 300, and the light scattered in the diffusion layer 312 by the intergranular particles can be diffused in the diffusion layer 312 and the anti-reflection coating. The interface between layers 311 is again folded back into the light exit direction (as indicated by the arrows), thereby increasing the luminous efficiency of the illumination device.
如圖5所示,也可以將圖3A的透明層310與擴散層312整合成具有包覆作用的擴散層314,以達到保護反射杯300內的第一組發光二極體302、第二組發光二極體304、第一組螢光體層306、以及第二組螢光體層308的作用,同時將第一組發光二極體302及第二組發光二極體304所發出的光與第一組螢光體層306及第二組螢光體層308受激發所發出的螢光更均勻地混合而產生白光。As shown in FIG. 5, the transparent layer 310 and the diffusion layer 312 of FIG. 3A may be integrated into a diffusion layer 314 having a cladding effect to achieve protection of the first group of LEDs 302 and the second group in the reflective cup 300. The function of the light emitting diode 304, the first group of phosphor layers 306, and the second group of phosphor layers 308, and the light emitted by the first group of LEDs 302 and the second group of LEDs 304 A set of phosphor layers 306 and a second set of phosphor layers 308 are more uniformly mixed by the excitation of the fluorescent light to produce white light.
吾人應瞭解可依使用上的需求與目的,在本發明之發光裝置的複數組發光二極體之每一組中設置一或多個發光二極體個體(unit)。換言之,在此種複數組發光二極體之每一組中可各自具有一個以上的發光二極體個體。圖6A係一橫剖面視圖,其顯示第一與第二組發光二極體依據本發明之實施例各具有兩個發光二極體個體。圖6B係圖6A所述結構的俯視圖。如圖6A所示,在具有反射內面的內凹結構(以下通稱為反射杯)400內設置第一組發光二極體402與第二組發光二極體404。第一組發光二極體402與第二組發光二極體404係選自下述由III-V族元素所構成的化合物:氮化鎵(GaN)、氮化鋁(AlN)、氮化銦(InN)、氮化鎵鋁(AlGaN)、以及氮化銦鎵(InGaN),但不限於此。如圖6B所示,第一組發光二極體402包括兩個發光二極體個體402a與402b;而第二組發光二極體404包括兩個發光二極體個體404a與404b。第一組發光二極體402與此第二組發光二極體404所發射的峰值波長可個別分佈在360nm至490nm的範圍內,且此兩組發光二極體402與404可具有不同的峰值波長。吾人應注意到,雖然在圖6A與6B中,發光裝置內的各組發光二極體僅顯示兩個發光二極體個體,但事實上可不限於此,即各組發光二極體可包括一或多個發光二極體個體。此外,各組發光二極體內的複數個發光二極體個體各個尺寸可為相同,也可為不同。It should be understood that one or more light-emitting diode units may be provided in each of the plurality of complex array light-emitting diodes of the light-emitting device of the present invention depending on the needs and purposes of use. In other words, each of the plurality of complex array light-emitting diodes may each have more than one light-emitting diode individual. Figure 6A is a cross-sectional view showing the first and second sets of light emitting diodes each having two light emitting diode bodies in accordance with an embodiment of the present invention. Figure 6B is a top plan view of the structure of Figure 6A. As shown in FIG. 6A, a first group of light emitting diodes 402 and a second group of light emitting diodes 404 are disposed within a recessed structure (hereinafter collectively referred to as a reflective cup) 400 having a reflective inner surface. The first group of light-emitting diodes 402 and the second group of light-emitting diodes 404 are selected from the following compounds consisting of group III-V elements: gallium nitride (GaN), aluminum nitride (AlN), indium nitride (InN), aluminum gallium nitride (AlGaN), and indium gallium nitride (InGaN), but are not limited thereto. As shown in FIG. 6B, the first set of light emitting diodes 402 includes two light emitting diode bodies 402a and 402b; and the second set of light emitting diodes 404 includes two light emitting diode bodies 404a and 404b. The peak wavelengths emitted by the first group of light-emitting diodes 402 and the second group of light-emitting diodes 404 may be individually distributed in the range of 360 nm to 490 nm, and the two sets of light-emitting diodes 402 and 404 may have different peaks. wavelength. It should be noted that although in FIG. 6A and FIG. 6B, each group of light-emitting diodes in the light-emitting device only displays two light-emitting diode bodies, in fact, it is not limited thereto, that is, each group of light-emitting diodes may include one Or multiple light-emitting diode individuals. In addition, each of the plurality of light-emitting diodes in each group of light-emitting diodes may have the same size or different sizes.
接著,使輸入端子(未顯示)分別連接至第一組發光二極體402與第二組發光二極體404,以提供第一組發光二極體402與第二組發光二極體404發光所需的電能。在第一組發光二極體402與第二組發光二極體404上分別覆蓋第一組螢光體層406與第二組螢光體層408,其中第一組螢光體層406與第二組螢光體層408的重疊部分較佳係減至最少,最好係毗鄰接觸而不重疊。第一組螢光體層406與第二組螢光體層408可為單一螢光層或為多重螢光層,且第一組螢光體層460與第二組螢光體層408的表面可為半球形、凸形、或平面。再者,第一組螢光體層406與第二組螢光體層408也可依需求或目的而覆蓋數量不等的發光二極體個體。例如,可依需求或目的使第一組發光二極體402僅包含數個發光二極體個體,且第一組螢光體層460覆蓋其上;而使第二組發光二極體404包含數量不等於第一組發光二極體402中發光二極體個體之數量的發光二極體個體,且第二組螢光體層408覆蓋其上。參照圖3B與3C,第一組螢光體層406會因為第一組發光二極體402所發出的光而受到激發,進而發出主波長在500nm至580m之範圍內的螢光;而第二組螢光體層408會因為第二組發光二極體404所發出的光而受到激發,進而發出主波長在590nm至650nm之範圍內的螢光。Next, an input terminal (not shown) is respectively connected to the first group of LEDs 402 and the second group of LEDs 404 to provide illumination of the first group of LEDs 402 and the second group of LEDs 404. The required electrical energy. The first group of phosphor layers 406 and the second group of phosphor layers 408 are respectively covered on the first group of LEDs 402 and the second group of LEDs 404, wherein the first group of phosphor layers 406 and the second group of phosphors The overlapping portions of the body layer 408 are preferably minimized, preferably adjacent to each other without overlapping. The first set of phosphor layers 406 and the second set of phosphor layers 408 may be a single phosphor layer or a multiple phosphor layer, and the surfaces of the first set of phosphor layers 460 and the second set of phosphor layers 408 may be hemispherical. , convex, or flat. Furthermore, the first set of phosphor layers 406 and the second set of phosphor layers 408 can also cover a plurality of individual light-emitting diodes according to needs or purposes. For example, the first group of light-emitting diodes 402 may include only a plurality of light-emitting diode bodies, and the first group of phosphor layers 460 may be covered thereon, and the second group of light-emitting diodes 404 may be included in the number. The number of light-emitting diodes that are not equal to the number of individual light-emitting diodes in the first group of light-emitting diodes 402, and the second set of phosphor layers 408 are overlaid thereon. 3B and 3C, the first set of phosphor layers 406 are excited by the light emitted by the first group of light-emitting diodes 402, thereby emitting fluorescence having a dominant wavelength in the range of 500 nm to 580 m; The phosphor layer 408 is excited by the light emitted by the second group of light-emitting diodes 404, thereby emitting fluorescence having a dominant wavelength in the range of 590 nm to 650 nm.
接著,再次參考圖6A,吾人可設置透明層410,以覆蓋第一組發光二極體402、第二組發光二極體404、第一組螢光體層406、以及第二組螢光體層408,使該等元件免於受到水氣的影響。透明層410可包括下列至少其中之一:例如環氧樹脂、矽氧樹脂、聚亞醯胺樹脂、丙烯酸樹脂、聚碳酸酯、或聚對二甲苯的透明高分子材料;以及例如石英或玻璃的透明材料。而且,透明層410可為單一層或多層結構。最後在透明層410上覆蓋擴散層412,而使第一組發光二極體402及第二組發光二極體404所發出的光與第一組螢光體層406及第二組螢光體層408受激發所發出的螢光更均勻地混合而產生白光。再者,透明層410的另一個功能為:可使自透明層410與其上層物質(例如,擴散層412)之介面因折射係數不同或受層間粒狀分子影響而反射的光,具有較大的機率射向反射杯400的反射內面,而非直接被第一組螢光體層406與第二組螢光體層408吸收,從而提高發光效率。此外,反射杯400可將自發光二極體所發出的光或在此發光二極體之上的結構介面中所反射的光折向出光方向(如箭頭所示),從而增加發光效率。Next, referring again to FIG. 6A, a transparent layer 410 may be disposed to cover the first group of light emitting diodes 402, the second group of light emitting diodes 404, the first set of phosphor layers 406, and the second set of phosphor layers 408. To protect these components from moisture. The transparent layer 410 may include at least one of the following: a transparent high molecular material such as an epoxy resin, a silicone resin, a polyimide resin, an acrylic resin, a polycarbonate, or a parylene; and a quartz or glass such as quartz or glass. Transparent material. Moreover, the transparent layer 410 can be a single layer or a multilayer structure. Finally, the transparent layer 410 is covered with the diffusion layer 412, and the light emitted by the first group of LEDs 402 and the second group of LEDs 404 is combined with the first group of phosphor layers 406 and the second group of phosphor layers 408. The fluorescent light emitted by the excitation is more uniformly mixed to produce white light. Furthermore, another function of the transparent layer 410 is to enable the interface between the transparent layer 410 and the upper layer material (for example, the diffusion layer 412) to be reflected by the refractive index or affected by the intergranular granular molecules. The probability is directed toward the reflective inner surface of the reflective cup 400 rather than being directly absorbed by the first set of phosphor layers 406 and the second set of phosphor layers 408, thereby increasing luminous efficiency. In addition, the reflective cup 400 can deflect the light emitted from the light-emitting diode or the light reflected in the structural interface above the light-emitting diode to the light-emitting direction (as indicated by the arrow), thereby increasing the luminous efficiency.
此外,可依使用目的或需求,而以串聯或並聯方式連接發光裝置內的複數組發光二極體,且可配合適當的電路設計、操作IC、以及電源供應,以相同或不同的操作電流,同時或分別對此複數組發光二極體進行操作。在各組發光二極體中的複數個發光二極體個體也可依使用目的或需求以串聯或並聯方式相連接,及配合適當的電路設計、操作IC、以及電源供應,以相同或不同的操作電流,同時或分別對此複數個發光二極體個體進行操作。In addition, the multi-array light-emitting diodes in the light-emitting device can be connected in series or in parallel according to the purpose or requirement of use, and can be matched with appropriate circuit design, operation IC, and power supply, with the same or different operating currents, The complex array of light-emitting diodes is operated simultaneously or separately. A plurality of individual light-emitting diodes in each group of light-emitting diodes may also be connected in series or in parallel according to the purpose or need of use, and with appropriate circuit design, operation IC, and power supply, the same or different The operating current is operated simultaneously or separately for the plurality of individual light-emitting diodes.
本發明也可應用於表面黏附型發光二極體的發光裝置。圖7A係依據本發明之實施例在一基底表面上黏置發光二極體之發光裝置的橫剖面視圖。在基底500上黏置第一組發光二極體502與第二組發光二極體504,其中此基底可為半導體,金屬、陶瓷(ceramic),或金屬基複合材料(metal matrix composites,MMCs);而第一組發光二極體502與第二組發光二極體504係選自下述由III-V族元素所構成的化合物:氮化鎵(GaN)、氮化鋁(AlN)、氮化銦(InN)、氮化鎵鋁(AlGaN)、以及氮化銦鎵(InGaN),但不限於此。在基底500與第一組發光二極體502以及與第二組發光二極體504之間的黏置處設有一反射面(未顯示),如上文所述,此反射面可將自發光二極體所發出的光或在發光二極體之上的結構介面中所反射的光折向出光方向(如箭頭所示),從而增加發光效率。第一組發光二極體502與第二組發光二極體504所發射的峰值波長可分佈在360nm至490nm的範圍內,且此兩組發光二極體502與504可具有不同的峰值波長。如上文所述,為使用上的需求與目的,第一組發光二極體502與第二組發光二極體504可各自具有一個以上的發光二極體個體,且第一組發光二極體502所具有的發光二極體個體數量不一定等於第二組發光二極體5042所具有的發光二極體個體數量。此外,各組發光二極體內之複數個發光二極體個體的各個尺寸可為相同,也可為不同。The present invention is also applicable to a light-emitting device of a surface-adhesive light-emitting diode. Figure 7A is a cross-sectional view of a light-emitting device with a light-emitting diode attached to a surface of a substrate in accordance with an embodiment of the present invention. A first group of light emitting diodes 502 and a second group of light emitting diodes 504 are adhered to the substrate 500, wherein the substrate can be a semiconductor, a metal, a ceramic, or a metal matrix composites (MMCs). The first group of light-emitting diodes 502 and the second group of light-emitting diodes 504 are selected from the following compounds consisting of group III-V elements: gallium nitride (GaN), aluminum nitride (AlN), nitrogen Indium (InN), aluminum gallium nitride (AlGaN), and indium gallium nitride (InGaN), but are not limited thereto. A reflective surface (not shown) is disposed between the substrate 500 and the first set of light emitting diodes 502 and the second set of light emitting diodes 504. As described above, the reflective surface can be self-illuminating. The light emitted by the polar body or the light reflected in the structural interface above the light-emitting diode is folded toward the light-emitting direction (as indicated by the arrow), thereby increasing the luminous efficiency. The peak wavelengths emitted by the first group of light-emitting diodes 502 and the second group of light-emitting diodes 504 may be distributed in the range of 360 nm to 490 nm, and the two sets of light-emitting diodes 502 and 504 may have different peak wavelengths. As described above, for the needs and purposes of use, the first group of light-emitting diodes 502 and the second group of light-emitting diodes 504 may each have more than one light-emitting diode individual, and the first group of light-emitting diodes The number of light-emitting diodes possessed by 502 is not necessarily equal to the number of light-emitting diodes possessed by the second group of light-emitting diodes 5042. In addition, the respective sizes of the plurality of light-emitting diode bodies in each group of the light-emitting diodes may be the same or different.
接著,使輸入端子501分別連接至第一組發光二極體502與第二組發光二極體504,以提供第一組發光二極體502與第二組發光二極體504發光所需的電能。在第一組發光二極體502與第二組發光二極體504的上方設置透明層506,以覆蓋第一組發光二極體502與第二組發光二極體504,而使其免於受到水氣的影響。透明層506可包括下列至少其中之一:例如環氧樹脂、矽氧樹脂、聚亞醯胺樹脂、丙烯酸樹脂、聚碳酸酯、或聚對二甲苯的透明高分子材料;以及例如玻璃或石英的透明材料。此外,透明層506可為單一層或多層結構,且透明層506的外型可為半球形、凸形、錐形,或為菲涅耳透鏡(Fresnel lens)形,並依使用上的需求與目的,擇其一適合外型使第一組發光二極體502與此第二組發光二極體504所發出的光能得到最佳萃取。Next, the input terminal 501 is respectively connected to the first group of the LEDs 502 and the second group of LEDs 504 to provide the first group of LEDs 502 and the second group of LEDs 504 for illumination. Electrical energy. A transparent layer 506 is disposed above the first group of light emitting diodes 502 and the second group of light emitting diodes 504 to cover the first group of light emitting diodes 502 and the second group of light emitting diodes 504, thereby protecting them from Affected by moisture. The transparent layer 506 may include at least one of the following: a transparent high molecular material such as an epoxy resin, a silicone resin, a polyimide resin, an acrylic resin, a polycarbonate, or a parylene; and a glass or quartz, for example. Transparent material. In addition, the transparent layer 506 may be a single layer or a multi-layer structure, and the transparent layer 506 may have a hemispherical shape, a convex shape, a conical shape, or a Fresnel lens shape, and according to the needs of use. The purpose is to optimize the light energy emitted by the first group of light-emitting diodes 502 and the second group of light-emitting diodes 504.
接著,在透明層506上之相對於第一組發光二極體502與第二組發光二極體504的位置處,使第一組螢光體層508與第二組螢光體層510分別覆蓋第一組發光二極體502與第二組發光二極體504,其中第一組螢光體層508與第二組螢光體層510重疊部分較佳係減至最少,最好係毗鄰接觸而不重疊。再者,透明層506的另一個功能為:可使自透明層506與其上層物質(例如,第一組螢光體層508以及第二組螢光體層510)之介面因折射係數不同或受層間粒狀分子影響而反射的光,具有較大的機率射向基底500的反射面,而非直接被第一組發光二極體502與第二組發光二極體504吸收,從而提高發光效率。Next, at a position on the transparent layer 506 relative to the first group of the LEDs 502 and the second group of LEDs 504, the first group of phosphor layers 508 and the second group of phosphor layers 510 are respectively covered. a set of light-emitting diodes 502 and a second group of light-emitting diodes 504, wherein the overlapping portions of the first set of phosphor layers 508 and the second set of phosphor layers 510 are preferably minimized, preferably adjacent to each other without overlapping . Furthermore, another function of the transparent layer 506 is to make the interface between the transparent layer 506 and its upper layer material (for example, the first group of phosphor layers 508 and the second group of phosphor layers 510) different or different by the intergranular layer. The light reflected by the molecules has a greater probability of being incident on the reflecting surface of the substrate 500 instead of being directly absorbed by the first group of light emitting diodes 502 and the second group of light emitting diodes 504, thereby improving luminous efficiency.
如上文所述,第一組螢光體層508與第二組螢光體層510可依需求或目的而覆蓋數量不等的發光二極體個體。參照圖3B與3C,第一組螢光體層508會因為第一組發光二極體502所發出的光而受到激發,進而發出主波長在500nm至580m之範圍內的螢光,而第二組螢光體層510會因為第二組發光二極體504所發出的光而受到激發,進而發出主波長在590nm至650nm之範圍內的螢光。第一組螢光體層508與第二組螢光體層510可為單一螢光層或為多重螢光層,且第一組螢光體層508與第二組螢光體層510的表面可為半球形、凸形,或平面。As described above, the first set of phosphor layers 508 and the second set of phosphor layers 510 can cover a varying number of light-emitting diode bodies as needed or desired. Referring to FIGS. 3B and 3C, the first set of phosphor layers 508 are excited by the light emitted by the first group of light-emitting diodes 502, thereby emitting fluorescence having a dominant wavelength in the range of 500 nm to 580 m, and the second group. The phosphor layer 510 is excited by the light emitted by the second group of light-emitting diodes 504, thereby emitting fluorescence having a dominant wavelength in the range of 590 nm to 650 nm. The first set of phosphor layers 508 and the second set of phosphor layers 510 may be a single phosphor layer or a multiple phosphor layer, and the surfaces of the first set of phosphor layers 508 and the second set of phosphor layers 510 may be hemispherical. , convex, or flat.
最後,設置透明封裝層516,以覆蓋第一組發光二極體502、第二組發光二極體504、透明層506、第一組螢光體層508、第二組螢光體層510、以及輸入端子501,而使第一組發光二極體502、第二組發光二極體504、透明層506、第一組螢光體層508、第二組螢光體層510、以及輸入端子501免於受到水氣的影響。此外,透明封裝層516的形狀可依使用上的需求與目的而包括半球形、凸形、錐形,或為菲涅耳透鏡形。換言之,吾人可設計透明封裝層516的形狀,俾使第一組發光二極體502、第二組發光二極體504、第一組螢光體層508、以及第二組螢光體層510所發出的光達到最大化,從而提高發光裝置的發光效率。透明封裝層516可包括下列至少其中之一:例如環氧樹脂、矽氧樹脂、聚亞醯胺樹脂、丙烯酸樹脂、聚碳酸酯、或聚對二甲苯的透明高分子材料;以及例如玻璃或石英的透明材料。而且,透明封裝層516可為單一層或多層結構。Finally, a transparent encapsulation layer 516 is disposed to cover the first group of light emitting diodes 502, the second group of light emitting diodes 504, the transparent layer 506, the first group of phosphor layers 508, the second group of phosphor layers 510, and the input The terminal 501 is configured to protect the first group of the LEDs 502, the second group of LEDs 504, the transparent layer 506, the first group of phosphor layers 508, the second group of phosphor layers 510, and the input terminals 501 from The impact of moisture. In addition, the shape of the transparent encapsulation layer 516 may include hemispherical, convex, conical, or Fresnel lens shapes depending on the needs and purposes of use. In other words, the shape of the transparent encapsulation layer 516 can be designed such that the first group of LEDs 502, the second group of LEDs 504, the first group of phosphor layers 508, and the second group of phosphor layers 510 are emitted. The light is maximized to increase the luminous efficiency of the illuminating device. The transparent encapsulation layer 516 may include at least one of the following: a transparent high molecular material such as an epoxy resin, a silicone resin, a polyimide resin, an acrylic resin, a polycarbonate, or a parylene; and, for example, glass or quartz Transparent material. Moreover, the transparent encapsulation layer 516 can be a single layer or a multilayer structure.
圖7B至圖7E係橫剖面視圖,顯示依據本發明之實施例以圖7A之發光裝置結構為基礎的衍生型發光裝置。在圖7B中,於圖7A所述之第一組螢光體層508及第二組螢光體層510上先行覆蓋擴散層514,再以透明封裝層516覆蓋第一組發光二極體502、第二組發光二極體504、透明層506、第一組螢光體層508、第二組螢光體層510、擴散層514、以及輸入端子501,而使第一組發光二極體502、第二組發光二極體504、透明層506、第一組螢光體層508、第二組螢光體層510、擴散層514、以及輸入端子501免於受到水氣的影響。擴散層512的功用為:使第一組發光二極體502及第二組發光二極體504所發出的光與第一組螢光體層508及第二組螢光體層510受激發所發出的螢光更均勻地混合而產生白光。7B through 7E are cross-sectional views showing a derivative type of light-emitting device based on the structure of the light-emitting device of FIG. 7A in accordance with an embodiment of the present invention. In FIG. 7B, the first set of phosphor layers 508 and the second set of phosphor layers 510 are covered with a diffusion layer 514, and then the first group of light-emitting diodes 502 are covered with a transparent encapsulation layer 516. Two sets of light emitting diodes 504, a transparent layer 506, a first set of phosphor layers 508, a second set of phosphor layers 510, a diffusion layer 514, and an input terminal 501, such that the first group of light emitting diodes 502, the second The group of light emitting diodes 504, the transparent layer 506, the first set of phosphor layers 508, the second set of phosphor layers 510, the diffusion layer 514, and the input terminals 501 are protected from moisture. The function of the diffusion layer 512 is to cause the light emitted by the first group of LEDs 502 and the second group of LEDs 504 to be excited by the first group of phosphor layers 508 and the second group of phosphor layers 510. The fluorescent light is more evenly mixed to produce white light.
在圖7C中,顯示在覆蓋透明層506之後與覆蓋第一組螢光體層508及第二組螢光體層510之前,可以旋轉塗布法、浸漬塗覆法、化學氣相沈積法、熱蒸鍍法、以及電子束蒸鍍法至少其中之一,在透明層506上形成抗反射塗層505。抗反射塗層505可例如包括但不限於下列至少其中之一:硝化纖維素、纖維素酯、醋酸纖維素、醋酸丁酸纖維素、鐵氟龍、氟樹脂、SiO2 、SiNx、SiOx Ny 、TiO2 、MgO,或MgF2 的透明層。抗反射塗層505可用以使其覆蓋區域內所發出的光(包括第一組發光二極體502及第二組發光二極體504所發出的光,以及自具有反射面之基底500反射的光)通過,;且使第一組螢光體層508與第二組螢光體層510中受到層間粒狀分子影響而散射的光能夠在第一組螢光體層508及第二組螢光體層510與抗反射塗層505之間的介面上再次折回出光方向(如箭頭所示),從而增加發光裝置的發光效率。In FIG. 7C, after coating the transparent layer 506 and before covering the first set of phosphor layers 508 and the second set of phosphor layers 510, spin coating, dip coating, chemical vapor deposition, thermal evaporation may be performed. At least one of the method and the electron beam evaporation method forms an anti-reflective coating 505 on the transparent layer 506. The anti-reflective coating 505 can include, for example but not limited to, at least one of the following: nitrocellulose, cellulose ester, cellulose acetate, cellulose acetate butyrate, Teflon, fluororesin, SiO 2 , SiNx, SiO x N a transparent layer of y , TiO 2 , MgO, or MgF 2 . The anti-reflective coating 505 can be used to cover the light emitted within the area (including the light emitted by the first set of light-emitting diodes 502 and the second set of light-emitting diodes 504, and the light reflected from the substrate 500 having the reflective surface). And passing light through the first set of phosphor layers 508 and the second set of phosphor layers 510 and the second set of phosphor layers The interface between the anti-reflective coating 505 and the anti-reflective coating 505 is again folded back (as indicated by the arrow), thereby increasing the luminous efficiency of the light-emitting device.
圖7D描述在上文所述之第一組螢光體層508及第二組螢光體層510與擴散層514之間覆蓋透明層512。透明層512除了可增強保護第一組螢光體層508、第二組螢光體層510、以及該兩組螢光體層底下之結構免於水氣的影響之外,也可使自透明層512與其上層物質(例如,擴散層514)之介面因折射係數不同或受層間粒狀分子影響而反射的光,具有較大的機率射向基底500的反射面,而非直接被第一組螢光體層508與第二組螢光體層510吸收,從而提高發光效率。透明層512可包括下列至少其中之一:例如環氧樹脂、矽氧樹脂、聚亞醯胺樹脂,丙烯酸樹脂、聚碳酸酯、或聚對二甲苯的透明高分子材料;以及例如玻璃或石英的透明材料。此外,透明層512可為單一層或多層結構,且透明層512的外型可為半球形、凸形、錐形,或為菲涅耳透鏡形,並依使用上的需求與目的,擇其一適合外型使第一組發光二極體502、第二組發光二極體504、第一組螢光體層508、以及第二組螢光體層510所發出的光能得到最佳萃取。FIG. 7D depicts overlaying the transparent layer 512 between the first set of phosphor layers 508 and the second set of phosphor layers 510 and diffusion layer 514 described above. In addition to enhancing the protection of the first set of phosphor layers 508, the second set of phosphor layers 510, and the structures under the two sets of phosphor layers from the moisture, the transparent layer 512 can also be used to transparently layer 512 from The light of the interface of the upper layer material (for example, the diffusion layer 514) is reflected by the difference in refractive index or the influence of the intergranular granular molecules, and has a greater probability of being directed toward the reflective surface of the substrate 500 instead of being directly used by the first group of phosphor layers. 508 is absorbed with the second set of phosphor layers 510 to increase luminous efficiency. The transparent layer 512 may include at least one of the following: a transparent high molecular material such as an epoxy resin, a silicone resin, a polyimide resin, an acrylic resin, a polycarbonate, or a parylene; and a glass or quartz, for example. Transparent material. In addition, the transparent layer 512 may be a single layer or a multi-layer structure, and the transparent layer 512 may have a hemispherical shape, a convex shape, a tapered shape, or a Fresnel lens shape, and may be selected according to the needs and purposes of use. A suitable shape allows the light energy emitted by the first group of light-emitting diodes 502, the second group of light-emitting diodes 504, the first group of phosphor layers 508, and the second group of phosphor layers 510 to be optimally extracted.
圖7E描述在上文所述之透明層506與第一組螢光體層508及第二組螢光體層510之間形成空心層507。空心層507可包含空氣。基於可靠度的考量,空心層507更可包含N2 、Ar、或其它惰性氣體。空心層507的厚度約在0.01mm至10mm的範圍內。由於空心層507的折射率約為1(因為空氣、N2 、Ar,或其它惰性氣體的折射率約為1),而螢光體層的折射率約為1.5,故熟悉本技藝者應可理解,當光自空心層507進入第一組螢光體層508與第二組螢光體層510時不會發生全反射。因此,空心層507的作用在於:使第一組發光二極體502及第二組發光二極體504所發出的光實質完全穿過空心層507與第一組螢光體層508及第二組螢光體層510之間的介面。另一方面,自第一組螢光體層508及第二組螢光體層510散射回來的光也會因為空心層507與螢光體層之間的折射率差異而易形成全反射,進而減少直接被第一組螢光體層508,第二組螢光體層510與透明層506吸收的機率,從而提昇發光裝置的整體發光效率。FIG. 7E depicts the formation of a hollow layer 507 between the transparent layer 506 described above and the first set of phosphor layers 508 and the second set of phosphor layers 510. The hollow layer 507 can contain air. The hollow layer 507 may further contain N 2 , Ar, or other inert gas based on reliability considerations. The thickness of the hollow layer 507 is approximately in the range of 0.01 mm to 10 mm. Since the refractive index of the hollow layer 507 is about 1 (because air, N 2 , Ar, or other inert gas has a refractive index of about 1) and the refractive index of the phosphor layer is about 1.5, it should be understood by those skilled in the art. When light enters the first set of phosphor layers 508 and the second set of phosphor layers 510 from the hollow layer 507, total reflection does not occur. Therefore, the function of the hollow layer 507 is to make the light emitted by the first group of the light-emitting diodes 502 and the second group of light-emitting diodes 504 substantially completely through the hollow layer 507 and the first group of phosphor layers 508 and the second group. The interface between the phosphor layers 510. On the other hand, the light scattered from the first set of phosphor layers 508 and the second set of phosphor layers 510 is also likely to form total reflection due to the difference in refractive index between the hollow layer 507 and the phosphor layer, thereby reducing direct The first set of phosphor layers 508, the second set of phosphor layers 510 and the transparent layer 506 are absorbed, thereby increasing the overall luminous efficiency of the illumination device.
熟悉本技藝者當可理解圖7B-圖7E所述之空心層507、透明層512、擴散層514,可依使用上的需求與目的而設置或省略。換言之,不應把具體說明所描述的順序理解為暗示這些結構係必定同時存在於本發明之發光裝置。It is understood by those skilled in the art that the hollow layer 507, the transparent layer 512, and the diffusion layer 514 described in FIGS. 7B-7E can be set or omitted depending on the needs and purposes of use. In other words, the order in which the specific description is described should not be construed as implying that these structures are necessarily present in the light-emitting device of the present invention.
圖8A與8B係分別顯示本發明與習知使用藍光發光二極體及混合螢光材料(YAG或矽酸鹽(Silicate)的螢光體層)相結合之發光裝置的光譜及演色性指數(CRI)比較。藉由本發明的組態而讓藍光(360-490nm)、綠色螢光(500-580nm)、以及紅色螢光(590-650nm)得到最佳出光,從而獲得較習知發光裝置更優化的光譜及演色性指數(CRI)。8A and 8B are respectively showing the spectrum and color rendering index (CRI) of the light-emitting device of the present invention combined with a conventional blue light-emitting diode and a mixed fluorescent material (YAG or a phosphor layer of a silicate). ) Comparison. The blue light (360-490 nm), the green fluorescent light (500-580 nm), and the red fluorescent light (590-650 nm) are optimally emitted by the configuration of the present invention, thereby obtaining a more optimized spectrum of the conventional light-emitting device and Color rendering index (CRI).
再者,參照表1,假設皆使用兩組1公釐見方的GaN發光二極體(具有不同的峰值波長),綠光螢光材料(峰值波長=521nm,主波長=534nm)、以及紅光螢光材料(峰值波長=635nm,主波長=611nm),則本發明在亮度上較先前技藝高出約26.7%。其中,本發明之組態係如上文所述之,即以綠光螢光材料的螢光體層覆蓋此兩組1公釐見方的GaN發光二極體中的一組,與以紅光螢光材料的螢光體層覆蓋此兩組1公釐見方的GaN發光二極體中的另一組(參照圖7A);而先前技藝係以綠光螢光材料與紅光螢光材料混合成螢光體層後,覆蓋於此兩組1公釐見方的GaN發光二極體(參照圖1)。Furthermore, referring to Table 1, it is assumed that two sets of 1 mm square GaN light-emitting diodes (having different peak wavelengths), green fluorescent materials (peak wavelength = 521 nm, dominant wavelength = 534 nm), and red light are used. The phosphor material (peak wavelength = 635 nm, dominant wavelength = 611 nm), the present invention is about 26.7% higher in brightness than the prior art. Wherein, the configuration of the present invention is as described above, that is, one of the two sets of 1 mm square GaN light-emitting diodes is covered with a phosphor layer of a green fluorescent material, and the red fluorescent light is used. The phosphor layer of the material covers the other of the two sets of 1 mm square GaN light-emitting diodes (refer to FIG. 7A); whereas the prior art is to mix the green light fluorescent material with the red light fluorescent material to form a fluorescent light. After the bulk layer, the two sets of 1 Å square GaN light-emitting diodes are covered (see FIG. 1).
需注意的是,上文之實施例所提到或隨附之圖式中的第一組發光二極體、第二組發光二極體,第一組螢光體層以及第二組螢光體層彼此間無絕對對應關係,即第一組螢光體層不一定非得與第一組發光二極體相配合,而第二組螢光體層也不一定非得與第二組發光二極體相配合。故具體說明中所描述及隨附之圖式所標示之發光二極體組(第一組發光二極體與第二組發光二極體)與螢光體層組(第一組螢光體層與第二組螢光體層)的序號僅用以描述性目的且不應理解為限制性。It should be noted that the first group of light-emitting diodes, the second group of light-emitting diodes, the first group of phosphor layers and the second group of phosphor layers in the drawings mentioned in the accompanying embodiments or in the accompanying drawings There is no absolute correspondence between the two groups, that is, the first group of phosphor layers do not have to cooperate with the first group of light-emitting diodes, and the second group of phosphor layers do not necessarily have to cooperate with the second group of light-emitting diodes. Therefore, the light-emitting diode group (the first group of light-emitting diodes and the second group of light-emitting diodes) and the phosphor layer group (the first group of phosphor layers) are described in the detailed description and accompanying drawings. The serial numbers of the second set of phosphor layers are for illustrative purposes only and are not to be construed as limiting.
雖然本發明已藉由數個實施例敘述,應理解熟悉本技藝者研讀先前詳述及研究圖式時可在其中做各種各樣替換、增加、變更及等價動作。因此,意味著本發明包含落入本發明的真實精神及範圍內之所有如替代、增加、變更及等價動作。While the invention has been described by the embodiments of the invention, it will be understood Therefore, it is intended that the present invention include all such modifications,
101...基板101. . . Substrate
102...藍光發光二極體102. . . Blue light emitting diode
103...螢光材料塗層103. . . Fluorescent material coating
104...透明半球形封裝罩104. . . Transparent hemispherical encapsulation
105...輸入端子105. . . Input terminal
200...反射杯200. . . Reflective cup
202...藍光發光二極體202. . . Blue light emitting diode
204...螢光材料層204. . . Fluorescent material layer
206...螢光材料層206. . . Fluorescent material layer
300...反射杯300. . . Reflective cup
302...第一組發光二極體302. . . First group of light-emitting diodes
304...第二組發光二極體304. . . Second group of light-emitting diodes
306...第一組螢光層306. . . First set of fluorescent layers
308...第二組螢光層308. . . Second set of fluorescent layers
310...透明層310. . . Transparent layer
311...抗反射塗層311. . . Anti-reflective coating
312...擴散層312. . . Diffusion layer
314...擴散層314. . . Diffusion layer
400...反射杯400. . . Reflective cup
402...第一組發光二極體402. . . First group of light-emitting diodes
402a...發光二極體個體402a. . . Light-emitting diode individual
402b...發光二極體個體402b. . . Light-emitting diode individual
404...第二組發光二極體404. . . Second group of light-emitting diodes
404a...發光二極體個體404a. . . Light-emitting diode individual
404b...發光二極體個體404b. . . Light-emitting diode individual
406...第一組螢光層406. . . First set of fluorescent layers
408...第二組螢光層408. . . Second set of fluorescent layers
410...透明層410. . . Transparent layer
412...擴散層412. . . Diffusion layer
500...基底500. . . Base
501...輸入端子501. . . Input terminal
502...第一組發光二極體502. . . First group of light-emitting diodes
504...第二組發光二極體504. . . Second group of light-emitting diodes
505...抗反射塗層505. . . Anti-reflective coating
506...第一透明層506. . . First transparent layer
507...空心層507. . . Hollow layer
508...第一組螢光層508. . . First set of fluorescent layers
510...第二組螢光層510. . . Second set of fluorescent layers
512...第二透明層512. . . Second transparent layer
514...擴散層514. . . Diffusion layer
516...透明封裝層516. . . Transparent encapsulation layer
本發明將可藉由上述詳細說明及隨附之相對應圖式而容易理解,且相似的參照數字代表相似的結構元件。The invention will be readily understood by the following detailed description and the accompanying drawings, and the claims
圖1係習知使用藍光發光二極體與混合螢光材料相結合之發光裝置的示意圖。1 is a schematic view of a conventional light-emitting device using a blue light-emitting diode in combination with a mixed fluorescent material.
圖2係習知使用藍光發光二極體與黃綠色螢光塗料層及紅色螢光塗料層相結合之發光裝置的示意圖。2 is a schematic view of a conventional light-emitting device using a blue light-emitting diode combined with a yellow-green fluorescent paint layer and a red fluorescent paint layer.
圖3A係依據本發明之實施例的發光裝置的橫剖面視圖。3A is a cross-sectional view of a light emitting device in accordance with an embodiment of the present invention.
圖3B與3C係依據本發明之實施例的分別具有綠色螢光體層與具有紅色螢光體層之藍光LED的光譜。3B and 3C are spectra of a blue LED having a green phosphor layer and a red phosphor layer, respectively, in accordance with an embodiment of the present invention.
圖4係依據本發明之實施例之另一發光裝置的橫剖面視圖。4 is a cross-sectional view of another light emitting device in accordance with an embodiment of the present invention.
圖5係依據本發明之實施例之結合擴散層與透明層之另一發光裝置的橫剖面視圖。Figure 5 is a cross-sectional view of another illuminating device incorporating a diffusion layer and a transparent layer in accordance with an embodiment of the present invention.
圖6A係一橫剖面視圖,顯示第一與第二組發光二極體依據本發明之實施例各具有兩個發光二極體個體。Figure 6A is a cross-sectional view showing the first and second sets of light emitting diodes each having two light emitting diode bodies in accordance with an embodiment of the present invention.
圖6B係圖6A所述結構的俯視圖。Figure 6B is a top plan view of the structure of Figure 6A.
圖7A係依據本發明之實施例在基底表面上黏置發光二極體之發光裝置的橫剖面視圖。Figure 7A is a cross-sectional view of a light-emitting device with a light-emitting diode attached to a surface of a substrate in accordance with an embodiment of the present invention.
圖7B至圖7E係橫剖面視圖,顯示依據本發明之實施例以圖7A之發光裝置結構為基礎的衍生型發光裝置。7B through 7E are cross-sectional views showing a derivative type of light-emitting device based on the structure of the light-emitting device of FIG. 7A in accordance with an embodiment of the present invention.
圖8A與8B分別係本發明與習知商用發光裝置(使用YAG或矽酸鹽的螢光體層)的光譜及演色性指數比較。8A and 8B are respectively a comparison of the spectrum and color rendering index of the present invention with a conventional commercial light-emitting device (phosphor layer using YAG or citrate).
300...反射杯300. . . Reflective cup
302...第一組發光二極體302. . . First group of light-emitting diodes
304...第二組發光二極體304. . . Second group of light-emitting diodes
306...第一組螢光層306. . . First set of fluorescent layers
308...第二組螢光層308. . . Second set of fluorescent layers
310...透明層310. . . Transparent layer
312...擴散層312. . . Diffusion layer
Claims (60)
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| US20020070681A1 (en) * | 2000-05-31 | 2002-06-13 | Masanori Shimizu | Led lamp |
| TW200501446A (en) * | 2003-06-20 | 2005-01-01 | Lambda Opto Technology Co Ltd | LED light-emitting module |
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