Claims (13)
一種蕭特基二極體結構，包含：一基板；一P型氮化鎵層，形成於該基板上；一N型氮化鎵層，形成於該P型氮化鎵層上；以及一蕭特基電極，形成於該N型氮化鎵層上；其中，該P型氮化鎵層與該N型氮化鎵層之間的一PN介面，令該蕭特基電極的一表面電場於垂直堆疊方向平均分佈。
A Schottky diode structure comprising: a substrate; a P-type gallium nitride layer formed on the substrate; an N-type gallium nitride layer formed on the P-type gallium nitride layer; and a Xiao a special base electrode formed on the N-type gallium nitride layer; wherein a PN interface between the P-type gallium nitride layer and the N-type gallium nitride layer causes a surface electric field of the Schottky electrode to be The average stacking direction is evenly distributed.
如申請專利範圍第1項所述之蕭特基二極體結構，其中該P型氮化鎵層與該N型氮化鎵層實質上電荷平衡。
The Schottky diode structure of claim 1, wherein the P-type gallium nitride layer and the N-type gallium nitride layer are substantially charge-balanced.
如申請專利範圍第1項所述之蕭特基二極體結構，其中該P型氮化鎵層與該N型氮化鎵層的摻雜濃度介於1015至1018cm-3之間。
The Schottky diode structure of claim 1, wherein the P-type gallium nitride layer and the N-type gallium nitride layer have a doping concentration of between 1015 and 1018 cm-3.
如申請專利範圍第1項所述之蕭特基二極體結構，其中該P型氮化鎵層與該N型氮化鎵層的厚度及摻雜濃度實質上相等。
The Schottky diode structure of claim 1, wherein the P-type gallium nitride layer and the N-type gallium nitride layer have substantially the same thickness and doping concentration.
如申請專利範圍第1項所述之蕭特基二極體結構，其中該基板為一矽基板。
The Schottky diode structure of claim 1, wherein the substrate is a germanium substrate.
如申請專利範圍第1項所述之蕭特基二極體結構，其更包含一緩衝層，該緩衝層形成於該基板與該P型氮化鎵層之間，其可為單層結構或多層結構。
The Schottky diode structure according to claim 1, further comprising a buffer layer formed between the substrate and the P-type gallium nitride layer, which may be a single layer structure or Multi-layer structure.
如申請專利範圍第6項所述之蕭特基二極體結構，其中該緩衝層之材質可選自由氮化矽(Si3N4)、氮化鋁(AlN)、高溫氮化鋁(HT-AlN)、氮化鋁鎵(AlGaN)、氮化銦鎵(InGaN)、氮碳化矽(SiCN)、低溫氮化鎵(LT-GaN)以及未摻雜氮化鎵(un-doped GaN)所組成的群組任一。
The Schottky diode structure as described in claim 6 wherein the buffer layer is made of tantalum nitride (Si3N4), aluminum nitride (AlN), and high temperature aluminum nitride (HT-AlN). a group of aluminum gallium nitride (AlGaN), indium gallium nitride (InGaN), niobium oxynitride (SiCN), low temperature gallium nitride (LT-GaN), and undoped GaN Any of the groups.
如申請專利範圍第1項所述之蕭特基二極體結構，其更包含一歐姆接觸電極，該歐姆接觸電極形成於該N型氮化鎵層上。
The Schottky diode structure of claim 1, further comprising an ohmic contact electrode formed on the N-type gallium nitride layer.
如申請專利範圍第8項所述之蕭特基二極體結構，其中該歐
姆接觸電極與該N型氮化鎵層之間更包括一N+型氮化鎵層。
Such as the Schottky diode structure described in claim 8 of the patent scope, wherein the
Further, an N+ type gallium nitride layer is further included between the contact electrode and the N-type gallium nitride layer.
如申請專利範圍第9項所述之蕭特基二極體結構，其中該N+型氮化鎵層的摻雜濃度大於1018cm-3。
The Schottky diode structure according to claim 9, wherein the N+ type gallium nitride layer has a doping concentration greater than 1018 cm-3.
如申請專利範圍第8項所述之蕭特基二極體結構，其中該歐姆接觸電極與該蕭特基電極之材質選自由鎳、鉑以及鈀所組成的群組任一。
The Schottky diode structure of claim 8, wherein the material of the ohmic contact electrode and the Schottky electrode is selected from the group consisting of nickel, platinum, and palladium.
一種蕭特基二極體的製造方法，其步驟包含：備製一基板；形成一P型氮化鎵層於該基板上；形成一N型氮化鎵層於該P型氮化鎵層上；以及形成一蕭特基電極於該N型氮化鎵層上；其中，該P型氮化鎵層與該N型氮化鎵層之間的一PN介面，令該蕭特基電極的一表面電場於垂直堆疊方向平均分佈。
A method for manufacturing a Schottky diode, the method comprising: preparing a substrate; forming a P-type gallium nitride layer on the substrate; forming an N-type gallium nitride layer on the P-type gallium nitride layer And forming a Schottky electrode on the N-type gallium nitride layer; wherein a PN interface between the P-type gallium nitride layer and the N-type gallium nitride layer, one of the Schottky electrodes The surface electric fields are evenly distributed in the vertical stacking direction.
如申請專利範圍第12項所述之蕭特基二極體的製造方法，其中於該P型氮化鎵層形成於該基板前，包括一形成一緩衝層於該基板的步驟。
The method for manufacturing a Schottky diode according to claim 12, wherein the P-type gallium nitride layer is formed in front of the substrate, and includes a step of forming a buffer layer on the substrate.