TWI452738B - Led package and method for manufacturing the same - Google Patents
Led package and method for manufacturing the same Download PDFInfo
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- TWI452738B TWI452738B TW099140467A TW99140467A TWI452738B TW I452738 B TWI452738 B TW I452738B TW 099140467 A TW099140467 A TW 099140467A TW 99140467 A TW99140467 A TW 99140467A TW I452738 B TWI452738 B TW I452738B
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- emitting diode
- light emitting
- package
- manufacturing
- package structure
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- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 238000000034 method Methods 0.000 title claims description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 23
- 239000002041 carbon nanotube Substances 0.000 claims description 21
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 21
- 239000000084 colloidal system Substances 0.000 claims description 17
- 239000007788 liquid Substances 0.000 claims description 8
- 230000017525 heat dissipation Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000004020 conductor Substances 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- -1 diamond-like Substances 0.000 description 2
- 239000012777 electrically insulating material Substances 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 2
- KRKNYBCHXYNGOX-UHFFFAOYSA-K Citrate Chemical compound [O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O KRKNYBCHXYNGOX-UHFFFAOYSA-K 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- AJXBBNUQVRZRCZ-UHFFFAOYSA-N azanylidyneyttrium Chemical compound [Y]#N AJXBBNUQVRZRCZ-UHFFFAOYSA-N 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Led Device Packages (AREA)
Description
本發明涉及一種半導體封裝結構,尤其涉及一種發光二極體封裝結構及其製造方法。The present invention relates to a semiconductor package structure, and more particularly to a light emitting diode package structure and a method of fabricating the same.
現在,發光二極體(Light Emitting Diode,LED)已經被廣泛應用到很多領域,例如,用於照明、作為液晶顯示器的背光源等等。發光二極體發出的光線一般是偏振方向雜亂無章的自然光,而在某些應用領域中,人們往往需要採用具有一特定偏振方向的偏振光。Nowadays, Light Emitting Diodes (LEDs) have been widely used in many fields, for example, for illumination, as a backlight for liquid crystal displays, and the like. The light emitted by the light-emitting diode is generally a natural light with a disordered polarization direction. In some applications, it is often necessary to use polarized light having a specific polarization direction.
有鑒於此,有必要提供一種能夠發出偏振光的發光二極體封裝結構及其製造方法。In view of the above, it is necessary to provide a light emitting diode package structure capable of emitting polarized light and a method of fabricating the same.
一種發光二極體封裝結構,其包括封裝載體、貼設在該封裝載體一個表面上的發光二極體晶片、以及覆蓋在發光二極體晶片上的封裝體。所述封裝體包括透明膠體及在透明膠體內沿同一方向平行排列的奈米碳管。A light emitting diode package structure includes a package carrier, a light emitting diode wafer attached to one surface of the package carrier, and a package overlying the LED body. The package comprises a transparent colloid and a carbon nanotube arranged in parallel in the same direction in the transparent colloid.
一種發光二極體封裝結構的製造方法,包括以下步驟:提供一個封裝載體;將發光二極體晶片貼設於所述封裝載體的一個表面上;將混有奈米碳管的液態透明膠體覆蓋到發光二極體晶片上;在液態透明膠體固化前,在發光二極體晶片周圍形成一個定向磁場 ,以使得奈米碳管在透明膠體內沿同一方向平行排列;及固化所述透明膠體。A manufacturing method of a light emitting diode package structure, comprising the steps of: providing a package carrier; attaching a light emitting diode wafer to a surface of the package carrier; and covering a liquid transparent gel mixed with a carbon nanotube On the light-emitting diode wafer; forming a directional magnetic field around the light-emitting diode wafer before the liquid transparent colloid is cured So that the carbon nanotubes are arranged in parallel in the same direction in the transparent gel; and the transparent colloid is cured.
所述發光二極體封裝結構及製造方法中,由於封裝體內具有沿同一方向大致平行排列的奈米碳管,封裝體具有偏振片的功能,從而使得發光二極體晶片發出的光線經過所述封裝體後成為偏振光。另外,由於奈米碳管具有極好的導熱性,從而能夠提高整個封裝體的導熱性能,有利於提高發光二極體晶片的散熱效率。In the light emitting diode package structure and manufacturing method, since the package body has carbon nanotubes arranged substantially in parallel in the same direction, the package body has a function of a polarizing plate, so that light emitted from the light emitting diode chip passes through the The package becomes polarized light. In addition, since the carbon nanotube has excellent thermal conductivity, the thermal conductivity of the entire package can be improved, which is advantageous for improving the heat dissipation efficiency of the LED.
100‧‧‧發光二極體封裝結構100‧‧‧Light emitting diode package structure
10‧‧‧封裝載體10‧‧‧Package carrier
11‧‧‧絕緣本體11‧‧‧Insulation body
12‧‧‧導線架12‧‧‧ lead frame
20‧‧‧發光二極體晶片20‧‧‧Light Diode Wafer
30‧‧‧封裝體30‧‧‧Package
40‧‧‧反射杯40‧‧‧Reflection Cup
101‧‧‧第一表面101‧‧‧ first surface
102‧‧‧第二表面102‧‧‧ second surface
圖1是本發明實施方式提供的一種發光二極體封裝結構剖視圖。1 is a cross-sectional view of a light emitting diode package structure according to an embodiment of the present invention.
圖2是圖1中的發光二極體封裝結構的製造方法流程圖。2 is a flow chart of a method of manufacturing the light emitting diode package structure of FIG. 1.
以下將結合附圖對本發明作進一步的詳細說明。The invention will be further described in detail below with reference to the accompanying drawings.
請參閱圖1,本發明實施方式提供的一種發光二極體封裝結構100包括封裝載體10、發光二極體晶片20、封裝體30及反射杯40。Referring to FIG. 1 , a light emitting diode package structure 100 according to an embodiment of the present invention includes a package carrier 10 , a light emitting diode chip 20 , a package body 30 , and a reflective cup 40 .
所述封裝載體10包括絕緣本體11及兩個導線架12。所述封裝載體10包括相對的第一表面101及第二表面102。所述每個導線架12一端裸露在封裝載體10的第一表面101上,另一端裸露在封裝載體10的第二表面102上。所述絕緣本體11可採用高導熱且電絕緣材料製成,該高導熱且電絕緣材料可選自石墨、矽、陶瓷、類鑽、環氧樹脂或矽烷氧樹脂等。所述導線架12可採用金屬或金屬合金製成。The package carrier 10 includes an insulative housing 11 and two lead frames 12 . The package carrier 10 includes opposing first and second surfaces 101, 102. Each of the leadframes 12 is exposed on the first surface 101 of the package carrier 10 and the other end is exposed on the second surface 102 of the package carrier 10. The insulative housing 11 can be made of a highly thermally conductive and electrically insulating material that can be selected from the group consisting of graphite, tantalum, ceramic, diamond-like, epoxy or decane-oxygen. The lead frame 12 may be made of metal or a metal alloy.
所述發光二極體晶片20貼設於所述封裝載體10上,具體的,所述發光二極體晶片20可貼設於所述絕緣本體11上,或貼設於所述導 線架12裸露在第一表面101上的一端上。本實施方式中,所述發光二極體晶片20貼設於一個導線架12裸露在第一表面101上的一端上。所述發光二極體晶片20可通過覆晶(flip-chip)、共晶(eutectic)或打線等方式與所述兩個導線架12電連接。本實施方式中,所述發光二極體晶片20與所述兩個導線架12打線連接。The LED chip 20 is attached to the package carrier 10. Specifically, the LED chip 20 can be attached to the insulative housing 11 or attached to the guide. The wire frame 12 is exposed on one end of the first surface 101. In this embodiment, the LED wafer 20 is attached to one end of a lead frame 12 exposed on the first surface 101. The LED wafer 20 can be electrically connected to the two lead frames 12 by flip-chip, eutectic or wire bonding. In the embodiment, the LED wafer 20 is connected to the two lead frames 12 by wire bonding.
所述封裝體30覆蓋在發光二極體晶片20上,用於保護發光二極體晶片20免受灰塵、水氣等影響。所述封裝體30包括透明膠體31及在透明膠體31內沿同一方向大致平行排列的奈米碳管32。透明膠體31的材質可以為矽膠(silicone)、環氧樹脂(epoxy)或其組合物。所述透明膠體31指能夠透射發光二極體晶片20發出的光線的膠體。由於平行排列的奈米碳管32具有偏振片的功能,因此,發光二極體晶片20發出的光線經過所述封裝體30後即可成為偏振光。另外,由於奈米碳管32具有極好的導熱性,從而能夠提高整個封裝體30的導熱性能,有利於提高發光二極體晶片20的散熱效率。由於奈米碳管32還具有很好的力學性能,從而能夠提高整個封裝體30的材料強度。優選地,所述封裝體30內可摻雜有螢光粉,所述螢光粉可選自釔鋁石榴石、鋱釔鋁石榴石、氮化物、硫化物及矽酸鹽中的一種或幾種的組合。The package body 30 is covered on the LED substrate 20 for protecting the LED chip 20 from dust, moisture and the like. The package body 30 includes a transparent colloid 31 and a carbon nanotube 32 arranged substantially parallel in the same direction in the transparent colloid 31. The material of the transparent colloid 31 may be silicone, epoxy or a combination thereof. The transparent colloid 31 refers to a colloid capable of transmitting light emitted from the LED chip 20. Since the parallel arrangement of the carbon nanotubes 32 has the function of a polarizing plate, the light emitted from the LEDs 20 passes through the package 30 and becomes polarized light. In addition, since the carbon nanotubes 32 have excellent thermal conductivity, the thermal conductivity of the entire package 30 can be improved, which is advantageous for improving the heat dissipation efficiency of the LEDs 20. Since the carbon nanotubes 32 also have good mechanical properties, the material strength of the entire package 30 can be improved. Preferably, the package body 30 may be doped with phosphor powder, and the phosphor powder may be selected from one or more of yttrium aluminum garnet, yttrium aluminum garnet, nitride, sulfide and citrate. Combination of species.
所述反射杯40環繞所述發光二極體晶片20及封裝體30設置在封裝載體10的第一表面101上。所述反射杯40用於提高整個發光二極體封裝結構100的出光效率,所述反射杯40可完全採用反射材料製成,或僅其內表面採用反射材料製成。優選地,所述反射杯40採用高導熱性材料製成,以提高發光二極體晶片20的散熱效率。本實施方式中,所述奈米碳管32大致平行於封裝載體10的第一表 面101,由於奈米碳管32軸向具有極佳的導熱性能,因此,封裝體30內的熱量可快速傳導到反射杯40上,從而能夠進一步提高發光二極體晶片20的散熱效率。The reflector cup 40 is disposed on the first surface 101 of the package carrier 10 around the LED chip 20 and the package 30. The reflector cup 40 is used to improve the light extraction efficiency of the entire LED package structure 100. The reflector cup 40 may be entirely made of a reflective material, or only its inner surface may be made of a reflective material. Preferably, the reflective cup 40 is made of a highly thermally conductive material to improve heat dissipation efficiency of the LED wafer 20. In this embodiment, the carbon nanotubes 32 are substantially parallel to the first table of the package carrier 10 In the surface 101, since the carbon nanotubes 32 have excellent thermal conductivity in the axial direction, the heat in the package 30 can be quickly conducted to the reflective cup 40, so that the heat dissipation efficiency of the light-emitting diode wafer 20 can be further improved.
請一併參閱圖2,本發明實施方式還提供了一種發光二極體封裝結構100的製造方法,該發光二極體封裝結構100的製造方法包括以下步驟:Referring to FIG. 2 , an embodiment of the present invention further provides a method for manufacturing a light emitting diode package structure 100 . The method for manufacturing the LED package structure 100 includes the following steps:
步驟S401,提供封裝載體10。該封裝載體10包括絕緣本體11及兩個導線架12。所述封裝載體10包括相對的第一表面101及第二表面102。所述每個導線架12一端裸露在封裝載體10的第一表面101上,另一端裸露在封裝載體10的第二表面102上。所述絕緣本體11可採用高導熱且電絕緣材料製成,該高導熱且電絕緣材料可選自石墨、矽、陶瓷、類鑽、環氧樹脂或矽烷氧樹脂等。所述導線架12可採用金屬或金屬合金製成。In step S401, a package carrier 10 is provided. The package carrier 10 includes an insulative housing 11 and two lead frames 12. The package carrier 10 includes opposing first and second surfaces 101, 102. Each of the leadframes 12 is exposed on the first surface 101 of the package carrier 10 and the other end is exposed on the second surface 102 of the package carrier 10. The insulative housing 11 can be made of a highly thermally conductive and electrically insulating material that can be selected from the group consisting of graphite, tantalum, ceramic, diamond-like, epoxy or decane-oxygen. The lead frame 12 may be made of metal or a metal alloy.
步驟S402,將發光二極體晶片20貼設於所述封裝載體10上,並與所述兩個導線架12電連接。具體的,所述發光二極體晶片20可貼設於所述絕緣本體11上,或貼設於所述導線架12裸露在第一表面101上的一端上。本實施方式中,所述發光二極體晶片20貼設於一個導線架12裸露在第一表面101上的一端上。In step S402, the LED wafer 20 is attached to the package carrier 10 and electrically connected to the two lead frames 12. Specifically, the LED chip 20 can be attached to the insulative housing 11 or attached to one end of the lead frame 12 exposed on the first surface 101. In this embodiment, the LED wafer 20 is attached to one end of a lead frame 12 exposed on the first surface 101.
步驟S403,環繞所述發光二極體晶片20在封裝載體10上設置反射杯40。所述反射杯40用於提高整個發光二極體封裝結構100的出光效率,所述反射杯40可完全採用反射材料製成,或僅其內表面採用反射材料製成。優選地,所述反射杯40採用高導熱性材料製成,以提高發光二極體晶片20的散熱效率。在其他實施方式中,所述發光二極體封裝結構100可不包括反射杯40,因而不需要步 驟S403。In step S403, a reflective cup 40 is disposed on the package carrier 10 around the light emitting diode chip 20. The reflector cup 40 is used to improve the light extraction efficiency of the entire LED package structure 100. The reflector cup 40 may be entirely made of a reflective material, or only its inner surface may be made of a reflective material. Preferably, the reflective cup 40 is made of a highly thermally conductive material to improve heat dissipation efficiency of the LED wafer 20. In other embodiments, the LED package structure 100 may not include the reflective cup 40, and thus does not require steps. Step S403.
步驟S404,將混有奈米碳管32的液態透明膠體31覆蓋到發光二極體晶片20上。優選地,所述奈米碳管32均勻分佈於液態透明膠體31中。In step S404, the liquid transparent colloid 31 mixed with the carbon nanotubes 32 is overlaid onto the light-emitting diode wafer 20. Preferably, the carbon nanotubes 32 are uniformly distributed in the liquid transparent colloid 31.
步驟S405,在液態透明膠體31固化前,在發光二極體晶片20周圍形成一個定向強磁場,以使得奈米碳管32在透明膠體31內沿同一方向大致平行排列。優選地,所述奈米碳管32大致平行於封裝載體10的第一表面101。優選地,所述強磁場的磁場強度大於10特斯拉(Tesla)。In step S405, before the liquid transparent colloid 31 is cured, a directional strong magnetic field is formed around the light emitting diode wafer 20, so that the carbon nanotubes 32 are arranged substantially in parallel in the same direction in the transparent colloid 31. Preferably, the carbon nanotubes 32 are substantially parallel to the first surface 101 of the package carrier 10. Preferably, the strong magnetic field has a magnetic field strength greater than 10 Tesla.
步驟S406,固化所述透明膠體31,得到發光二極體封裝結構100。Step S406, curing the transparent colloid 31 to obtain a light emitting diode package structure 100.
本發明實施方式提供的發光二極體封裝結構及製造方法中,由於封裝體30內具有沿同一方向大致平行排列的奈米碳管32,封裝體30具有偏振片的功能,從而使得發光二極體晶片20發出的光線經過所述封裝體30後成為偏振光。另外,由於奈米碳管32具有極好的導熱性,從而能夠提高整個封裝體30的導熱性能,有利於提高發光二極體晶片20的散熱效率。In the LED package structure and manufacturing method provided by the embodiment of the present invention, since the package 30 has the carbon nanotubes 32 arranged substantially in parallel in the same direction, the package 30 has the function of a polarizing plate, thereby making the LEDs The light emitted from the bulk wafer 20 passes through the package 30 and becomes polarized light. In addition, since the carbon nanotubes 32 have excellent thermal conductivity, the thermal conductivity of the entire package 30 can be improved, which is advantageous for improving the heat dissipation efficiency of the LEDs 20.
另外,本領域技術人員還可在本發明精神內做其他變化,當然,這些依據本發明精神所做之變化,都應包含在本發明所要求保護之範圍之內。In addition, those skilled in the art can make other changes in the spirit of the present invention. Of course, the changes made in accordance with the spirit of the present invention should be included in the scope of the present invention.
100‧‧‧發光二極體封裝結構100‧‧‧Light emitting diode package structure
10‧‧‧封裝載體10‧‧‧Package carrier
11‧‧‧絕緣本體11‧‧‧Insulation body
12‧‧‧導線架12‧‧‧ lead frame
20‧‧‧發光二極體晶片20‧‧‧Light Diode Wafer
30‧‧‧封裝體30‧‧‧Package
40‧‧‧反射杯40‧‧‧Reflection Cup
101‧‧‧第一表面101‧‧‧ first surface
102‧‧‧第二表面102‧‧‧ second surface
Claims (4)
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| TW099140467A TWI452738B (en) | 2010-11-23 | 2010-11-23 | Led package and method for manufacturing the same |
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| TW099140467A TWI452738B (en) | 2010-11-23 | 2010-11-23 | Led package and method for manufacturing the same |
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| TW201222888A TW201222888A (en) | 2012-06-01 |
| TWI452738B true TWI452738B (en) | 2014-09-11 |
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7196354B1 (en) * | 2005-09-29 | 2007-03-27 | Luminus Devices, Inc. | Wavelength-converting light-emitting devices |
| TW200731557A (en) * | 2006-02-10 | 2007-08-16 | Everlight Electronics Co Ltd | Light emitting diode package structure |
| TWM324287U (en) * | 2006-02-10 | 2007-12-21 | Everlight Electronics Co Ltd | Light-emitting semiconductor device package structure |
| US20080001284A1 (en) * | 2006-05-26 | 2008-01-03 | The Hong Kong University Of Science And Technolgoy | Heat Dissipation Structure With Aligned Carbon Nanotube Arrays and Methods for Manufacturing And Use |
| US7453093B2 (en) * | 2005-07-20 | 2008-11-18 | Samsung Electro-Mechanics Co., Ltd. | LED package and fabricating method thereof |
| US7709952B2 (en) * | 2005-12-24 | 2010-05-04 | Samsung Electro-Mechanics Co., Ltd. | Light emitting diode package |
| US20100128205A1 (en) * | 2008-11-27 | 2010-05-27 | Soon-Joon Rho | Display substrate and method for manufacturing the same |
| US20100283036A1 (en) * | 2007-07-23 | 2010-11-11 | Seth Coe-Sullivan | Quantum dot light enhancement substrate and lighting device including same |
-
2010
- 2010-11-23 TW TW099140467A patent/TWI452738B/en not_active IP Right Cessation
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7453093B2 (en) * | 2005-07-20 | 2008-11-18 | Samsung Electro-Mechanics Co., Ltd. | LED package and fabricating method thereof |
| US7196354B1 (en) * | 2005-09-29 | 2007-03-27 | Luminus Devices, Inc. | Wavelength-converting light-emitting devices |
| US7709952B2 (en) * | 2005-12-24 | 2010-05-04 | Samsung Electro-Mechanics Co., Ltd. | Light emitting diode package |
| TW200731557A (en) * | 2006-02-10 | 2007-08-16 | Everlight Electronics Co Ltd | Light emitting diode package structure |
| TWM324287U (en) * | 2006-02-10 | 2007-12-21 | Everlight Electronics Co Ltd | Light-emitting semiconductor device package structure |
| US20080001284A1 (en) * | 2006-05-26 | 2008-01-03 | The Hong Kong University Of Science And Technolgoy | Heat Dissipation Structure With Aligned Carbon Nanotube Arrays and Methods for Manufacturing And Use |
| US20100283036A1 (en) * | 2007-07-23 | 2010-11-11 | Seth Coe-Sullivan | Quantum dot light enhancement substrate and lighting device including same |
| US20100128205A1 (en) * | 2008-11-27 | 2010-05-27 | Soon-Joon Rho | Display substrate and method for manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201222888A (en) | 2012-06-01 |
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