TWI452701B - A method for manufacturing an electrode of a boiled solar cell - Google Patents
A method for manufacturing an electrode of a boiled solar cell Download PDFInfo
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- TWI452701B TWI452701B TW101100488A TW101100488A TWI452701B TW I452701 B TWI452701 B TW I452701B TW 101100488 A TW101100488 A TW 101100488A TW 101100488 A TW101100488 A TW 101100488A TW I452701 B TWI452701 B TW I452701B
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- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 238000000034 method Methods 0.000 title claims description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 42
- 229910052782 aluminium Inorganic materials 0.000 claims description 34
- 239000011521 glass Substances 0.000 claims description 24
- 239000000843 powder Substances 0.000 claims description 20
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 14
- 239000003292 glue Substances 0.000 claims description 11
- 238000005245 sintering Methods 0.000 claims description 10
- 239000003513 alkali Substances 0.000 claims description 8
- 239000011230 binding agent Substances 0.000 claims description 8
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 8
- 239000002904 solvent Substances 0.000 claims description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- 238000002360 preparation method Methods 0.000 claims description 7
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 238000002844 melting Methods 0.000 claims description 4
- 230000008018 melting Effects 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 3
- 238000012545 processing Methods 0.000 claims description 3
- 239000011787 zinc oxide Substances 0.000 claims description 3
- WUOACPNHFRMFPN-SECBINFHSA-N (S)-(-)-alpha-terpineol Chemical compound CC1=CC[C@@H](C(C)(C)O)CC1 WUOACPNHFRMFPN-SECBINFHSA-N 0.000 claims description 2
- RUJPNZNXGCHGID-UHFFFAOYSA-N (Z)-beta-Terpineol Natural products CC(=C)C1CCC(C)(O)CC1 RUJPNZNXGCHGID-UHFFFAOYSA-N 0.000 claims description 2
- 239000001856 Ethyl cellulose Substances 0.000 claims description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 claims description 2
- OVKDFILSBMEKLT-UHFFFAOYSA-N alpha-Terpineol Natural products CC(=C)C1(O)CCC(C)=CC1 OVKDFILSBMEKLT-UHFFFAOYSA-N 0.000 claims description 2
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical group CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 claims description 2
- 229940088601 alpha-terpineol Drugs 0.000 claims description 2
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 claims description 2
- 229920001249 ethyl cellulose Polymers 0.000 claims description 2
- 235000019325 ethyl cellulose Nutrition 0.000 claims description 2
- 238000005187 foaming Methods 0.000 claims description 2
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 claims description 2
- 229920005989 resin Polymers 0.000 claims description 2
- 239000011347 resin Substances 0.000 claims description 2
- QJVXKWHHAMZTBY-GCPOEHJPSA-N syringin Chemical compound COC1=CC(\C=C\CO)=CC(OC)=C1O[C@H]1[C@H](O)[C@@H](O)[C@H](O)[C@@H](CO)O1 QJVXKWHHAMZTBY-GCPOEHJPSA-N 0.000 claims description 2
- 229940116411 terpineol Drugs 0.000 claims description 2
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 claims 1
- XEUCQOBUZPQUMQ-UHFFFAOYSA-N Glycolone Chemical compound COC1=C(CC=C(C)C)C(=O)NC2=C1C=CC=C2OC XEUCQOBUZPQUMQ-UHFFFAOYSA-N 0.000 claims 1
- 229910052797 bismuth Inorganic materials 0.000 claims 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims 1
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 claims 1
- 238000002156 mixing Methods 0.000 claims 1
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 claims 1
- 238000009835 boiling Methods 0.000 description 6
- 229910052715 tantalum Inorganic materials 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 230000035484 reaction time Effects 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- KKCBUQHMOMHUOY-UHFFFAOYSA-N sodium oxide Chemical compound [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N Calcium oxide Chemical compound [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 229910018068 Li 2 O Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- -1 aluminum-germanium Chemical compound 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- FZFYOUJTOSBFPQ-UHFFFAOYSA-M dipotassium;hydroxide Chemical compound [OH-].[K+].[K+] FZFYOUJTOSBFPQ-UHFFFAOYSA-M 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- 239000005431 greenhouse gas Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- UFQXGXDIJMBKTC-UHFFFAOYSA-N oxostrontium Chemical compound [Sr]=O UFQXGXDIJMBKTC-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000005871 repellent Substances 0.000 description 1
- 229910001948 sodium oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Photovoltaic Devices (AREA)
- Conductive Materials (AREA)
Description
本發明是有關於一種電極的製造方法,特別是指一種可耐水煮型太陽能電池之電極的製造方法。The present invention relates to a method for producing an electrode, and more particularly to a method for producing an electrode of a water-resistant solar cell.
相較於傳統燃煤、燃氣式或核能發電,太陽能電池是利用光發電效應直接將太陽能轉換為電能,因此不會伴隨產生二氧化碳等溫室效應氣體,並可減少對石化燃料的依賴而提供安全自主的電力來源。一般而言,在太陽能電池的製程中,會將一鋁膠塗佈於於矽晶片上並烘乾燒結後,形成一鋁-矽層,用以提升太陽能電池之能源轉換效率。Compared with traditional coal-fired, gas-fired or nuclear power generation, solar cells use solar power to directly convert solar energy into electrical energy, so they are not accompanied by greenhouse gases such as carbon dioxide, and can reduce the dependence on fossil fuels to provide safety. Autonomous source of electricity. Generally, in the process of the solar cell, an aluminum paste is coated on the germanium wafer and dried and sintered to form an aluminum-germanium layer for improving the energy conversion efficiency of the solar cell.
然而,眾所皆知鋁粉為禁水物質,因為鋁本身遇水極易產生劇烈的氧化反應而釋出氫氣。典型的太陽能電池燒結過程(Sintering Process)極為快速,最高溫在750-850℃之間,反應時間僅2-10秒鐘,因此鋁膠中的鋁球顆粒無法完全燒結,僅止於鋁球顆粒間局部連結成鋁電極,因此傳統太陽能用鋁膠燒結形成矽晶片上之鋁電極,鋁球顆粒因表面缺乏完整的保護膜,導致在85℃熱水中,鋁元素很快就與水產生激烈反應,釋放出氫氣泡泡,而無法符合10分鐘以上之耐水煮應用特性需求。However, it is well known that aluminum powder is a water-repellent substance because aluminum itself is highly susceptible to violent oxidation reactions and releases hydrogen. The typical solar cell sintering process (Sintering Process) is extremely fast, the highest temperature is between 750-850 ° C, and the reaction time is only 2-10 seconds. Therefore, the aluminum ball particles in the aluminum rubber cannot be completely sintered, only the aluminum ball particles. The aluminum is bonded locally to form an aluminum electrode. Therefore, the conventional solar energy is sintered with aluminum rubber to form an aluminum electrode on the tantalum wafer. The aluminum ball particles lack a complete protective film on the surface, and the aluminum element is rapidly generated with water in the hot water at 85 ° C. The reaction releases a hydrogen bubble that does not meet the boiling water application characteristics of more than 10 minutes.
因此,本發明之目的,即在提供一種可以提高耐水煮物性的可耐水煮型太陽能電池之電極的製造方法。Accordingly, it is an object of the present invention to provide a method for producing an electrode of a boilable solar cell capable of improving the resistance to boiling of water.
於是,本發明可耐水煮型太陽能電池之電極的製造方法,包含一鋁膠配製步驟、一塗覆步驟,及一加工步驟。Therefore, the method for manufacturing the electrode of the water-resistant solar cell of the present invention comprises an aluminum rubber preparation step, a coating step, and a processing step.
該鋁膠配製步驟是取適量的鋁粉、無鉛玻璃粉、溶劑,及黏結劑,均勻混合後製得鋁膠,以該鋁膠的總重量為100wt%計,該無鉛玻璃粉的重量百分比為0.1~10wt%、溶劑的重量百分比為17~22wt%、黏結劑的重量百分比為3~6wt%,及平衡量的鋁粉。The aluminum rubber preparation step is to take an appropriate amount of aluminum powder, lead-free glass powder, solvent, and a binder, and uniformly mix to obtain an aluminum glue. The total weight of the aluminum glue is 100% by weight, and the weight percentage of the lead-free glass powder is 0.1 to 10 wt%, a solvent weight percentage of 17 to 22 wt%, a binder weight percentage of 3 to 6 wt%, and a balance amount of aluminum powder.
該塗覆步驟是透過一網版將該鋁膠塗覆於一矽晶片上,經150-200℃℃烘乾。該燒結步驟是利用紅外線高溫爐以50-100℃/秒之快速升降溫方式對該塗覆有鋁膠的矽晶片進行燒結,而完成一晶片電極。The coating step is to apply the aluminum paste to a wafer through a screen and dry at 150-200 ° C. The sintering step is to sinter the aluminum-coated silicon wafer coated by an infrared high-temperature furnace at a rapid temperature rise and fall manner of 50-100 ° C / sec to complete a wafer electrode.
本發明之功效在於,藉由該鋁膠中所添加之無鉛玻璃粉本身具有低融點及潤濕性佳之特性,因此可以在燒結步驟中,以極短的反應時間形成緻密的氧化物保護膜,使晶片電極符合耐水煮的應用特性需求。The effect of the invention is that the lead-free glass powder added by the aluminum glue has the characteristics of low melting point and good wettability, so that a dense oxide protective film can be formed in the sintering step with a very short reaction time. In order to meet the needs of the boiling water application characteristics of the wafer electrode.
有關本發明之前述及其他技術內容、特點與功效,在以下配合參考圖式之一個較佳實施例的詳細說明中,將可清楚的呈現。The above and other technical contents, features and advantages of the present invention will be apparent from the following detailed description of the preferred embodiments.
參閱圖1,為本發明可耐水煮型太陽能電池之電極的製造方法之較佳實施例,包含一鋁膠配製步驟21、一塗覆步驟22、一加工步驟23,及一檢測步驟24。Referring to FIG. 1, a preferred embodiment of a method for manufacturing an electrode of a water-resistant solar cell of the present invention comprises an aluminum rubber preparation step 21, a coating step 22, a processing step 23, and a detecting step 24.
該鋁膠配製步驟21是取適量的鋁粉、無鉛玻璃粉、溶劑,及黏結劑,均勻混合後製得鋁膠。該鋁膠的總重量為100wt%計,該無鉛玻璃粉的重量百分比為0.1~10wt%、溶劑的重量百分比為17~22wt%、黏結劑的重量百分比為3~6wt%,及平衡量的鋁粉。The aluminum rubber preparation step 21 is to take an appropriate amount of aluminum powder, lead-free glass powder, solvent, and a binder, and uniformly mix to obtain an aluminum glue. The total weight of the aluminum glue is 100% by weight, the lead percentage of the glass powder is 0.1-10% by weight, the solvent is 17-22% by weight, the binder is 3-6 wt%, and the balance amount of aluminum powder.
於本實施例中,溶劑是由松油醇(Terpineol)、α-松油醇(α-Terpineol)、β-松油醇(β-Terpineol)、二乙二醇單丁醚(Butyl Carbitol,BC),或二乙二醇單丁醚醋酸酯(Butyl Carbitol Aceta,BCA)中擇一,而黏結劑是由聚乙烯醇縮丁醛樹脂,或乙基纖維素中擇一。In this example, the solvent is terpineol, α-Terpineol, β-Terpineol, and Butyl Carbitol (BC). ), or one of Butyl Carbitol Aceta (BCA), and the binder is selected from polyvinyl butyral resin, or ethyl cellulose.
該無鉛玻璃粉是製成鋁膠並塗覆於矽晶片上後,於500-850℃、1分鐘之內,在矽晶片(或其它穩定物質為材料)之表面上,具有良好潤濕性(Contact angle>90度)者,該無鉛玻璃粉為多種氧化物混合之玻璃材料,且熔點低於600℃。該無鉛玻璃粉包含:三氧化二鋁(Al2 O3 )、二氧化矽(SiO2 )、氧化鋅(ZnO)、三氧化二硼(B2 O3 )、三氧化二鉍(Bi2 O3 )、鹼金族元素之氧化物如氧化鈉(Li2 O)、氧化鉀(K2 O),或氧化鈉(Na2 O),及鹼土族元素之氧化物如氧化鎂(MgO)、氧化鈣(CaO)、氧化鍶(SrO),或氧化鋇(BaO)。以該無鉛玻璃粉的總重量為100wt%計,三氧化二鋁的重量百分比為0.1~3wt%、二氧化矽的重量百分比為3~10wt%、氧化鋅的重量百分比為10~25wt%的、三氧化二硼的重量百分比為12~45wt%的、三氧化二鉍的重量百分比為3~10wt%,鹼金族元素之氧化物的重量百分比為5wt%以上、鹼土族元素之氧化物的重量百分比為5wt%以上,較佳地,鹼金族元素之氧化物與鹼土族元素之氧化物的重量百分比加總,是佔該無鉛玻璃粉之總重量的15%wt以上。The lead-free glass powder is made of aluminum glue and coated on the tantalum wafer, and has good wettability on the surface of the tantalum wafer (or other stable material) at 500-850 ° C for 1 minute. Contact angle>90 degrees), the lead-free glass powder is a glass material mixed with various oxides, and the melting point is lower than 600 ° C. The lead-free glass powder comprises: aluminum oxide (Al 2 O 3 ), cerium oxide (SiO 2 ), zinc oxide (ZnO), boron trioxide (B 2 O 3 ), and antimony trioxide (Bi 2 O). 3 ) an oxide of an alkali gold group element such as sodium oxide (Li 2 O), potassium oxide (K 2 O), or sodium oxide (Na 2 O), and an oxide of an alkaline earth element such as magnesium oxide (MgO), Calcium oxide (CaO), strontium oxide (SrO), or barium oxide (BaO). The weight percentage of the aluminum oxide is 0.1 to 3 wt%, the weight percentage of the ceria is 3 to 10 wt%, and the weight percentage of the zinc oxide is 10 to 25 wt%, based on 100 wt% of the total weight of the lead-free glass powder. The weight percentage of diboron trioxide is 12 to 45 wt%, the weight percentage of antimony trioxide is 3 to 10 wt%, the weight percentage of the oxide of the alkali gold group element is 5 wt% or more, and the weight of the oxide of the alkaline earth element. The percentage is 5% by weight or more, and preferably, the weight percentage of the oxide of the alkali gold group element and the oxide of the alkaline earth element is 15% by weight or more based on the total weight of the lead-free glass powder.
該塗覆步驟22是透過一網版將該鋁膠塗覆於矽晶片上,經150-200℃烘乾。該燒結步驟23是利用紅外線高溫爐以50-100℃/秒之快速升降溫方式進行對該塗覆有鋁膠的矽晶片進行燒結,而完成一晶片電極。在紅外線高溫爐中最高溫(Peak Temperature)為790℃~800℃(Datapaq量測值795℃),於本實施例中,是以高於600℃到最高溫,再降到600℃的時間<6秒(Datapaq量測值約5.6秒)的過程完成該燒結步驟23。The coating step 22 is applied to the tantalum wafer through a screen and dried at 150-200 °C. In the sintering step 23, the aluminum-coated silicon wafer coated with the aluminum paste is sintered by an infrared high-temperature furnace at a rapid rise and fall temperature of 50-100 ° C / sec to complete a wafer electrode. In the infrared high temperature furnace, the highest temperature (Peak Temperature) is 790 ° C ~ 800 ° C (Datapaq measured value of 795 ° C), in this embodiment, is higher than 600 ° C to the highest temperature, and then down to 600 ° C time < The sintering step 23 is completed by a process of 6 seconds (about 5.6 seconds for the Datapaq measurement).
該檢測步驟24是用以檢測該晶片電極的表面品質,並將該晶片電極置於85℃的水中10分鐘以上而觀察其是否有起泡現象。The detecting step 24 is for detecting the surface quality of the wafer electrode, and the wafer electrode is placed in water at 85 ° C for 10 minutes or more to observe whether or not there is foaming.
於本實施例中,是使用五種不同的無鉛玻璃粉製成該鋁膠後,塗覆於該矽晶片上而形成該晶片電極,並於85℃下進行耐水煮測試。同時以Solar Simulator System(I-V tester)在1000W/cm2 ,25℃,1.5G之標準條件下量測其晶片轉換效率。參閱下頁表一,為五種不同的無鉛玻璃粉所含之氧化物的成分列表,並獲得如表二所示之實驗結果。In this embodiment, after the aluminum paste is made of five different lead-free glass powders, the wafer electrode is formed on the germanium wafer, and the boiling resistance test is performed at 85 °C. At the same time, the wafer conversion efficiency was measured under the standard conditions of 1000 W/cm 2 , 25 ° C, and 1.5 G using a Solar Simulator System (IV tester). Refer to Table 1 on the next page for a list of the oxides of the five different lead-free glass powders and obtain the experimental results as shown in Table 2.
由表二的結果可知,使用第五種無鉛玻璃粉(種類E)所製成的鋁膠,其鹼金族元素之氧化物的重量百分比為5wt%以上、鹼土族元素之氧化物的重量百分比為5wt%以上,且鹼金族元素之氧化物與鹼土族元素之氧化物的重量百分比加總為15%wt以上,而能達成在85℃熱水中,耐水煮10分鐘以上而不產生氫氧氣泡之應用特性需求。As can be seen from the results of Table 2, the aluminum paste prepared by using the fifth lead-free glass powder (Type E) has a weight percentage of the oxide of the alkali gold group element of 5 wt% or more and the weight percentage of the oxide of the alkaline earth element. It is 5 wt% or more, and the weight percentage of the oxide of the alkali gold group element and the oxide of the alkaline earth element is 15% by weight or more, and it can be achieved in boiling water of 85 ° C for more than 10 minutes without generating hydrogen. The application characteristics of oxygen bubbles.
綜上所述,本發明可耐水煮型太陽能電池之電極的製造方法,藉由該鋁膠中所添加之無鉛玻璃粉本身具有低融點及潤濕性佳之特性,因此可以在燒結步驟中,以極短的反應時間形成緻密的氧化物保護膜,使晶片電極符合耐水煮的應用特性需求,故確實能達成本發明之目的。In summary, the method for manufacturing an electrode of a water-resistant solar cell of the present invention has the characteristics of low melting point and good wettability by the lead-free glass powder added in the aluminum rubber, so that in the sintering step, It is indeed possible to achieve the object of the present invention by forming a dense oxide protective film with a very short reaction time so that the wafer electrode meets the requirements of the boiling-resistant application characteristics.
惟以上所述者,僅為本發明之較佳實施例而已,當不能以此限定本發明實施之範圍,即大凡依本發明申請專利範圍及發明說明內容所作之簡單的等效變化與修飾,皆仍屬本發明專利涵蓋之範圍內。The above is only the preferred embodiment of the present invention, and the scope of the invention is not limited thereto, that is, the simple equivalent changes and modifications made by the scope of the invention and the description of the invention are All remain within the scope of the invention patent.
21...鋁膠配製步驟twenty one. . . Aluminum glue preparation steps
22...塗覆步驟twenty two. . . Coating step
23...燒結步驟twenty three. . . Sintering step
24...檢測步驟twenty four. . . Detection step
圖1是一流程圖,說明本發明可耐水煮型太陽能電池之電極的製造方法之較佳實施例。BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a flow chart showing a preferred embodiment of a method for producing an electrode of a water-resistant solar cell of the present invention.
21...鋁膠配製步驟twenty one. . . Aluminum glue preparation steps
22...塗覆步驟twenty two. . . Coating step
23...燒結步驟twenty three. . . Sintering step
24...檢測步驟twenty four. . . Detection step
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| TW200937451A (en) * | 2007-10-18 | 2009-09-01 | Du Pont | Electrode paste for solar cell and solar cell electrode using the paste |
| TW200952051A (en) * | 2008-06-11 | 2009-12-16 | Ind Tech Res Inst | Backside electrode layer and fabricating method thereof |
| TW201013703A (en) * | 2008-05-30 | 2010-04-01 | Du Pont | Conductive compositions and processes for use in the manufacture of semiconductor devices |
| TW201024755A (en) * | 2008-12-16 | 2010-07-01 | China Steel Corp | A testing method for aluminum gel used in solar cell |
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| TW200937451A (en) * | 2007-10-18 | 2009-09-01 | Du Pont | Electrode paste for solar cell and solar cell electrode using the paste |
| TW201013703A (en) * | 2008-05-30 | 2010-04-01 | Du Pont | Conductive compositions and processes for use in the manufacture of semiconductor devices |
| TW200952051A (en) * | 2008-06-11 | 2009-12-16 | Ind Tech Res Inst | Backside electrode layer and fabricating method thereof |
| TW201024755A (en) * | 2008-12-16 | 2010-07-01 | China Steel Corp | A testing method for aluminum gel used in solar cell |
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