TWI450029B - Metal-embedded photomask and manufacturing method thereof - Google Patents
Metal-embedded photomask and manufacturing method thereof Download PDFInfo
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- TWI450029B TWI450029B TW101134458A TW101134458A TWI450029B TW I450029 B TWI450029 B TW I450029B TW 101134458 A TW101134458 A TW 101134458A TW 101134458 A TW101134458 A TW 101134458A TW I450029 B TWI450029 B TW I450029B
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- metal
- substrate
- reticle
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- 238000004519 manufacturing process Methods 0.000 title claims description 24
- 239000000758 substrate Substances 0.000 claims description 44
- 229910052751 metal Inorganic materials 0.000 claims description 36
- 239000002184 metal Substances 0.000 claims description 36
- 239000007769 metal material Substances 0.000 claims description 30
- 239000000463 material Substances 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 17
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 7
- 235000013870 dimethyl polysiloxane Nutrition 0.000 claims description 7
- 239000004205 dimethyl polysiloxane Substances 0.000 claims description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 239000010931 gold Substances 0.000 claims description 7
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims description 7
- 238000005234 chemical deposition Methods 0.000 claims description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 239000011651 chromium Substances 0.000 claims description 6
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 6
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 6
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 5
- 238000005468 ion implantation Methods 0.000 claims description 5
- 229920000768 polyamine Polymers 0.000 claims description 5
- 229920005749 polyurethane resin Polymers 0.000 claims description 5
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 5
- 239000004800 polyvinyl chloride Substances 0.000 claims description 5
- 229920000915 polyvinyl chloride Polymers 0.000 claims description 5
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 4
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 4
- 229920001971 elastomer Polymers 0.000 claims description 4
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 4
- -1 polyethylene terephthalate Polymers 0.000 claims description 4
- 229920005989 resin Polymers 0.000 claims description 4
- 239000011347 resin Substances 0.000 claims description 4
- 229910052707 ruthenium Inorganic materials 0.000 claims description 4
- 238000002207 thermal evaporation Methods 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 3
- 238000005566 electron beam evaporation Methods 0.000 claims description 3
- 150000002291 germanium compounds Chemical class 0.000 claims description 3
- 238000005289 physical deposition Methods 0.000 claims description 3
- 239000004626 polylactic acid Substances 0.000 claims description 3
- 229920000642 polymer Polymers 0.000 claims description 3
- 238000007639 printing Methods 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 150000001622 bismuth compounds Chemical class 0.000 claims 1
- 238000007747 plating Methods 0.000 claims 1
- 229920000747 poly(lactic acid) Polymers 0.000 claims 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 claims 1
- 239000010410 layer Substances 0.000 description 46
- 229920002120 photoresistant polymer Polymers 0.000 description 20
- 238000001459 lithography Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001579 optical reflectometry Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/46—Antireflective coatings
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
- G03F1/64—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof characterised by the frames, e.g. structure or material, including bonding means therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Optical Elements Other Than Lenses (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
Description
本發明係關於一種光罩及其製造方法，特別關於一種金屬嵌入光罩及其製造方法。The present invention relates to a photomask and a method of fabricating the same, and more particularly to a metal embedding mask and a method of fabricating the same.
傳統的光學微影技術中，光罩對光阻層的紫外光(UV)曝光技術主要可以分為接觸式光學微影技術以及倍縮微影技術兩種。In the traditional optical lithography technology, the ultraviolet (UV) exposure technology of the photomask to the photoresist layer can be mainly divided into two types: contact optical lithography and doubling lithography.
接觸式光學微影技術所使用的光罩，其表面特徵圖案尺寸與實際複製於基板上的圖案為1：1的比例，以直接貼近於光阻層表面的方式進行曝光；而倍縮微影技術所使用的光罩，其表面特徵圖案尺寸則為實際複製於基板上圖案的數倍，經由光學系統投射的方式對光阻進行曝光。The reticle used in the contact optical lithography technology has a surface feature pattern size of 1:1 in proportion to the pattern actually reproduced on the substrate, and is exposed directly to the surface of the photoresist layer; and doubling lithography The reticle used has a surface feature pattern size that is actually multiplied by a number of patterns on the substrate, and the photoresist is exposed by way of projection by an optical system.
其中，在接觸式光學微影技術中，光罩表面的金屬圖案會與基板上的光阻層接觸摩擦，容易造成金屬圖案耗損使得光罩使用壽命縮短，並且當光罩沾上光阻層時，光罩就需要清洗，隨著清洗的次數越多，光罩可使用的期限就越短。另外，當塗佈有光阻層的基板表面不是非常平整時，光罩與光阻層會產生不確定的空隙與距離，而造成光線的散射與繞射，進而造成曝光的尺寸誤差，並且造成光阻層淺層部分的側向曝光範圍擴大，因而無法製作出高深寬比的光阻結構。Wherein, in the contact optical lithography technology, the metal pattern on the surface of the reticle is in contact with the photoresist layer on the substrate, which is easy to cause the metal pattern to be worn out, so that the life of the reticle is shortened, and when the reticle is coated with the photoresist layer The mask needs to be cleaned, and as the number of cleanings increases, the duration of use of the mask is shorter. In addition, when the surface of the substrate coated with the photoresist layer is not very flat, the photomask and the photoresist layer may generate an indefinite gap and distance, which may cause scattering and diffraction of light, thereby causing dimensional errors of the exposure and causing The lateral exposure range of the shallow portion of the photoresist layer is enlarged, so that a high aspect ratio photoresist structure cannot be produced.
有鑑於上述課題，本發明之目的為提供一種金屬嵌入光罩及其製造方法，能夠以簡單的製程製造出使用壽命長，並且能產生精準的光阻結構之光罩。In view of the above problems, an object of the present invention is to provide a metal-embedded reticle and a method of manufacturing the same, which can manufacture a reticle having a long service life and capable of producing a precise photoresist structure by a simple process.
為達上述目的，依據本發明之一種金屬嵌入光罩之製造方法包含：將至少一金屬材料形成於一基板上，基板具有複數凸部突出於基板之一表面，各凸部具有複數側面及一頂面，該等側面連接頂面與表面，金屬材料形成於頂面及表面；貼附一軟性膜材於基板之該等頂面；以及使軟性膜材自該等頂面脫離而將位於該等頂面之金屬材料部分移除。In order to achieve the above object, a method for manufacturing a metal-embedded reticle according to the present invention comprises: forming at least one metal material on a substrate having a plurality of convex portions protruding from a surface of the substrate, each convex portion having a plurality of sides and a a top surface, the side surfaces are joined to the top surface and the surface, a metal material is formed on the top surface and the surface; a soft film is attached to the top surfaces of the substrate; and the soft film material is detached from the top surfaces The metal material of the top surface is partially removed.
在一實施例中，金屬材料之形成方式為塗佈法(Coating)、印刷法(Printing)、物理沉積法(Physical Deposition)、化學沉積法(Chemical Deposition)、離子佈植法(Ion Implantation)、電漿化學沉積法(Plasma Chemical Deposition)、電子束蒸鍍、熱蒸鍍、或濺鍍等。In one embodiment, the metal material is formed by coating, printing, physical deposition, chemical deposition, ion implantation (Ion Implantation), Plasma Chemical Deposition, electron beam evaporation, thermal evaporation, or sputtering.
在一實施例中，基板之材質包含一高分子有機矽化合物、或是含二氧化矽之透光材料。In one embodiment, the material of the substrate comprises a high molecular organic germanium compound or a light-transmitting material containing cerium oxide.
在一實施例中，基板之材質包含聚二甲基矽氧烷(PDMS)、UV樹脂、矽橡膠或聚氨酯樹脂(PUA)。In one embodiment, the material of the substrate comprises polydimethyl siloxane (PDMS), UV resin, ruthenium rubber or polyurethane resin (PUA).
在一實施例中，金屬材料形成為複數子層。In an embodiment, the metallic material is formed as a plurality of sub-layers.
在一實施例中，金屬材料包含金、鉻或其組合。In an embodiment, the metallic material comprises gold, chromium, or a combination thereof.
在一實施例中，軟性膜材之材質包含聚對苯二甲酸乙二酯(PET)、硬式聚氯乙烯(Rigid PVC)、聚乙烯醇 (PVA)、聚醯胺(PA)、或聚乳酸(PLA)。In one embodiment, the material of the soft film material comprises polyethylene terephthalate (PET), rigid polyvinyl chloride (Rigid PVC), polyvinyl alcohol. (PVA), polyamine (PA), or polylactic acid (PLA).
為達上述目的，依據本發明之一種金屬嵌入光罩包含一基板以及一金屬層。基板具有複數凸部突出於基板之一表面，各凸部具有複數側面及一頂面，該等側面連接頂面與表面。金屬層設置於表面，且頂面不被金屬層覆蓋。To achieve the above object, a metal-embedded photomask according to the present invention comprises a substrate and a metal layer. The substrate has a plurality of protrusions protruding from a surface of the substrate, each protrusion having a plurality of sides and a top surface, the sides connecting the top surface and the surface. The metal layer is disposed on the surface, and the top surface is not covered by the metal layer.
在一實施例中，金屬層包含複數子層。且金屬層之材質例如包含金、鉻、或其組合。In an embodiment, the metal layer comprises a plurality of sub-layers. And the material of the metal layer includes, for example, gold, chromium, or a combination thereof.
在一實施例中，金屬層之一厚度小於等於凸部之一高度之一半，並大於等於凸部之高度之四分之一。In one embodiment, one of the metal layers has a thickness less than or equal to one-half the height of one of the convex portions and greater than or equal to one-fourth the height of the convex portion.
承上所述，本發明之金屬嵌入光罩之製造方法的製程簡易因而可大幅降低成本。並且本發明之金屬嵌入光罩中，金屬材料不會形成在凸部的頂面，因而避免金屬材料之遮光層與另一基板之光阻層摩擦，而能延長光罩之使用壽命。此外，本發明之金屬嵌入光罩之凸部頂面具有良好的貼附特性，可在大面積的微影製程中提供高平貼度，而讓光罩與光阻層緊密貼合，有效減少光罩與光阻層之間隙，進而減少兩者之間的光反射率並縮小光阻層的側向曝光範圍，而能製造出精準的光阻結構，進而提升製程良率。As described above, the manufacturing method of the metal-embedded reticle of the present invention is simple in process and thus can greatly reduce the cost. Moreover, the metal of the present invention is embedded in the reticle, and the metal material is not formed on the top surface of the convex portion, thereby avoiding the friction between the light shielding layer of the metal material and the photoresist layer of the other substrate, thereby prolonging the service life of the reticle. In addition, the top surface of the convex portion of the metal-embedded reticle of the invention has good adhesion characteristics, can provide high flatness in a large-area lithography process, and allows the reticle and the photoresist layer to closely fit, thereby effectively reducing light. The gap between the cover and the photoresist layer, thereby reducing the light reflectivity between the two and reducing the lateral exposure range of the photoresist layer, can produce a precise photoresist structure, thereby improving the process yield.
以下將參照相關圖式，說明依本發明較佳實施例之一種金屬嵌入光罩及其製造方法，其中相同的元件將以相同的參照符號加以說明。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a metal-embedded reticle and a method of manufacturing the same according to a preferred embodiment of the present invention will be described with reference to the accompanying drawings, wherein the same elements will be described with the same reference numerals.
圖1為本發明較佳實施例之一種金屬嵌入光罩之製造 方法的流程圖，圖2A至圖2C為本實施例之製造方法的示意圖。請參照圖1至圖2C以說明本實施例之金屬嵌入光罩之製造方法。1 is a manufacturing of a metal embedded reticle in accordance with a preferred embodiment of the present invention; A flow chart of the method, and FIGS. 2A to 2C are schematic views of a manufacturing method of the embodiment. Please refer to FIG. 1 to FIG. 2C for explaining a method of manufacturing the metal-embedded reticle of the embodiment.
請參照圖2A所示，步驟S01：將至少一金屬材料101形成於一基板201上，基板201具有複數凸部202突出於基板之一表面203，各凸部202具有複數側面204及一頂面205，該等側面204連接頂面205與表面203，金屬材料101形成於頂面205及表面203。其中，金屬材料101之形成方式例如為塗佈法(Coating)、印刷法(Printing)、物理沉積法(Physical Deposition)、化學沉積法(Chemical Deposition)、離子佈植法(Ion Implantation)、電漿化學沉積法(Plasma Chemical Deposition)、電子束蒸鍍、熱蒸鍍、或濺鍍等。於此係以熱蒸鍍為例來使金屬材料101形成於基板201之凸部202之頂面205與表面203。需注意者，若是藉由其他方法，則可能使得金屬材料101亦形成於凸部202之側面204。Referring to FIG. 2A, step S01: at least one metal material 101 is formed on a substrate 201. The substrate 201 has a plurality of protrusions 202 protruding from a surface 203 of the substrate, and each protrusion 202 has a plurality of sides 204 and a top surface. 205, the side surfaces 204 are connected to the top surface 205 and the surface 203, and the metal material 101 is formed on the top surface 205 and the surface 203. The forming method of the metal material 101 is, for example, coating, printing, physical deposition, chemical deposition, ion implantation (Ion Implantation), plasma. Platinum Chemical Deposition, electron beam evaporation, thermal evaporation, or sputtering. Here, the metal material 101 is formed on the top surface 205 and the surface 203 of the convex portion 202 of the substrate 201 by taking thermal evaporation as an example. It should be noted that if other methods are used, the metal material 101 may be formed on the side surface 204 of the convex portion 202.
在本實施例中，基板201可為一硬式基板或一軟性基板，基板201之材質例如包括含二氧化矽之透光材料，例如石英、玻璃等，或是包含一高分子有機矽化合物，例如為聚二甲基矽氧烷(PDMS)。於此，基板201係以PDMS基板為例，並可提供良好的平貼度。在其他實施例中，基板201之材質或可包含UV樹脂、矽橡膠或聚氨酯樹脂(PUA)、或其他具透光性之軟性高分子材料。In this embodiment, the substrate 201 can be a rigid substrate or a flexible substrate. The material of the substrate 201 includes, for example, a light-transmitting material containing cerium oxide, such as quartz, glass, or the like, or a polymer organic germanium compound, for example. It is polydimethyl siloxane (PDMS). Here, the substrate 201 is exemplified by a PDMS substrate, and can provide good flatness. In other embodiments, the material of the substrate 201 may include a UV resin, a ruthenium rubber or a polyurethane resin (PUA), or other light transmissive soft polymer materials.
金屬材料101形成於基板201上並作為遮光之用。在 本實施例中不特別限制金屬材料之態樣，本實施例之金屬材料係以包含金、鉻或其組合為例。並且金屬材料101形成為複數子層102、103(於此係以二子層為例)，其中子層102之材質為金，子層103之材質為鉻。The metal material 101 is formed on the substrate 201 and used as a light shielding. in In the embodiment, the metal material is not particularly limited, and the metal material of the embodiment is exemplified by containing gold, chromium or a combination thereof. The metal material 101 is formed into a plurality of sub-layers 102 and 103 (herein, two sub-layers are taken as an example), wherein the sub-layer 102 is made of gold, and the sub-layer 103 is made of chromium.
請參照圖2B所示，步驟S02：貼附一軟性膜材301於基板201之該等頂面205。軟性膜材301之材質例如包含聚對苯二甲酸乙二酯(PET)、硬式聚氯乙烯(Rigid PVC)、聚乙烯醇(PVA)、聚醯胺(PA)、或聚乳酸(PLA)、或其他具有黏附特性之合適膜材；於此係以聚對苯二甲酸乙二酯作為軟性膜材301為例。Referring to FIG. 2B, step S02: attaching a flexible film 301 to the top surfaces 205 of the substrate 201. The material of the flexible film 301 includes, for example, polyethylene terephthalate (PET), hard polyvinyl chloride (Rigid PVC), polyvinyl alcohol (PVA), polyamine (PA), or polylactic acid (PLA). Or other suitable film having adhesive properties; here, polyethylene terephthalate is used as the flexible film 301 as an example.
請參照圖2C所示，步驟S03：使軟性膜材301自該等頂面205脫離而將位於該等頂面205之金屬材料部分移除。在本實施例中，軟性膜材301與子層103接觸，由於鉻的黏附特性，使得軟性膜材301可輕易將位於頂面205之金屬材料的部分移除。此外，子層102貼附基板201之凸部202的頂面205，由於金的安定特性可避免基板201之凸部頂面205的沾附特性遭到破壞。Referring to FIG. 2C, step S03: removing the flexible film 301 from the top surfaces 205 to remove portions of the metal material on the top surfaces 205. In the present embodiment, the soft film 301 is in contact with the sub-layer 103, and the soft film 301 can easily remove a portion of the metal material located on the top surface 205 due to the adhesion characteristics of the chrome. In addition, the sub-layer 102 is attached to the top surface 205 of the convex portion 202 of the substrate 201, and the adhesion characteristics of the convex top surface 205 of the substrate 201 are prevented from being damaged due to the stability characteristics of the gold.
請參照圖3所示，其係為本發明較佳實施例之一種金屬嵌入光罩2的示意圖。金屬嵌入光罩2包含一基板201以及一金屬層21。基板201具有複數凸部202突出於基板201之一表面203，各凸部202具有複數側面204及一頂面205，該等側面204連接頂面205與表面203。金屬層21設置於表面203，且頂面205不被金屬層21覆蓋。Please refer to FIG. 3, which is a schematic view of a metal embedded photomask 2 according to a preferred embodiment of the present invention. The metal embedded reticle 2 includes a substrate 201 and a metal layer 21. The substrate 201 has a plurality of protrusions 202 protruding from a surface 203 of the substrate 201. Each of the protrusions 202 has a plurality of sides 204 and a top surface 205. The sides 204 connect the top surface 205 and the surface 203. The metal layer 21 is disposed on the surface 203, and the top surface 205 is not covered by the metal layer 21.
基板201之特徵已於製造方法之實施例一併詳述，故 於此不再贅述。金屬層21可包含單一層或複數子層，於此係以二子層102、103為例。在本實施例中，金屬層21之一厚度D小於等於凸部202之一高度H之一半，並大於等於凸部之高度H之四分之一。若金屬層21的厚度太大，則在製程中凸部頂面205的金屬材料不易脫離；若金屬層21的厚度太小，則會影響將來微影製程的遮光效果。因此，金屬層21有一較佳範圍，藉由金屬層21之厚度D小於等於凸部202之高度H之一半，使得凸部頂面205上的金屬材料能藉由軟性膜材301脫離乾淨，也避免軟性膜材301將位於表面203的金屬材料移除。另外，藉由金屬層21之厚度D大於等於凸部之高度H之四分之一，可提供足夠的遮光效果，同時沒有金屬層的凸部202會形成一種導光柱的結構，使光線不至於從凸部202側邊穿透，而阻絕漏光現象。在本實施例中，金屬嵌入光罩2可作為接觸式光罩。The features of the substrate 201 have been described in detail in the embodiment of the manufacturing method, so This will not be repeated here. The metal layer 21 may comprise a single layer or a plurality of sub-layers, as exemplified by the two sub-layers 102, 103. In the present embodiment, the thickness D of one of the metal layers 21 is less than or equal to one half of the height H of one of the convex portions 202, and is greater than or equal to one quarter of the height H of the convex portion. If the thickness of the metal layer 21 is too large, the metal material of the top surface 205 of the convex portion is not easily detached during the process; if the thickness of the metal layer 21 is too small, the light shielding effect of the lithography process will be affected. Therefore, the metal layer 21 has a preferred range. The thickness D of the metal layer 21 is less than or equal to one half of the height H of the convex portion 202, so that the metal material on the top surface 205 of the convex portion can be detached by the soft film 301. The soft film 301 is prevented from removing the metallic material located on the surface 203. In addition, by the thickness D of the metal layer 21 being greater than or equal to one quarter of the height H of the convex portion, a sufficient light shielding effect can be provided, and the convex portion 202 without the metal layer forms a structure of the light guiding column, so that the light is not prevented. It penetrates from the side of the convex portion 202 to block the light leakage phenomenon. In the present embodiment, the metal-embedded reticle 2 can function as a contact reticle.
綜上所述，本發明之金屬嵌入光罩之製造方法的製程簡易，因而可大幅降低成本。並且本發明之金屬嵌入光罩之金屬材料不會形成在凸部的頂面，因而避免金屬材料所形成之金屬層與另一基板之光阻層摩擦，而能延長光罩之使用壽命。此外，本發明之金屬嵌入光罩之凸部頂面具有良好的貼附特性，可在大面積的微影製程中提供高平貼度，而讓光罩與光阻層緊密貼合，有效減少光罩與光阻層之間隙，進而減少兩者之間的光反射率並縮小光阻層的側向曝光範圍，而能製造出精準的光阻結構，進而提升製程 良率。As described above, the manufacturing method of the metal-embedded reticle of the present invention is simple in process, and the cost can be greatly reduced. Moreover, the metal material of the metal embedded reticle of the invention is not formed on the top surface of the convex portion, thereby avoiding the friction between the metal layer formed by the metal material and the photoresist layer of the other substrate, and prolonging the service life of the reticle. In addition, the top surface of the convex portion of the metal-embedded reticle of the invention has good adhesion characteristics, can provide high flatness in a large-area lithography process, and allows the reticle and the photoresist layer to closely fit, thereby effectively reducing light. The gap between the cover and the photoresist layer, thereby reducing the light reflectivity between the two and reducing the lateral exposure range of the photoresist layer, thereby producing a precise photoresist structure, thereby improving the process Yield.
以上所述僅為舉例性，而非為限制性者。任何未脫離本發明之精神與範疇，而對其進行之等效修改或變更，均應包含於後附之申請專利範圍中。The above is intended to be illustrative only and not limiting. Any equivalent modifications or alterations to the spirit and scope of the invention are intended to be included in the scope of the appended claims.
101‧‧‧金屬材料101‧‧‧Metal materials
102、103‧‧‧子層102, 103‧‧‧ sub-layer
201‧‧‧基板201‧‧‧Substrate
202‧‧‧凸部202‧‧‧ convex
203‧‧‧表面203‧‧‧ surface
204‧‧‧側面204‧‧‧ side
205‧‧‧頂面205‧‧‧ top surface
2‧‧‧金屬嵌入光罩2‧‧‧Metal embedded mask
21‧‧‧金屬層21‧‧‧metal layer
301‧‧‧軟性膜材301‧‧‧Soft film
D‧‧‧厚度D‧‧‧thickness
H‧‧‧高度H‧‧‧ Height
S01~S03‧‧‧製造方法步驟S01~S03‧‧‧Manufacturing method steps
圖1為本發明較佳實施例之一種金屬嵌入光罩之製造方法的流程圖；圖2A至圖2C為本發明較佳實施例之金屬嵌入光罩之製造方法的示意圖；以及圖3為本發明較佳實施例之一種金屬嵌入光罩的示意圖。1 is a flow chart of a method for manufacturing a metal-embedded reticle according to a preferred embodiment of the present invention; and FIGS. 2A to 2C are schematic views showing a method of manufacturing a metal-embedded reticle according to a preferred embodiment of the present invention; A schematic view of a metal embedded reticle of the preferred embodiment of the invention.
S01~S03‧‧‧製造方法步驟S01~S03‧‧‧Manufacturing method steps
Claims (12)
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| TW101134458A TWI450029B (en) | 2012-09-20 | 2012-09-20 | Metal-embedded photomask and manufacturing method thereof |
| CN201310415053.5A CN103676467B (en) | 2012-09-20 | 2013-09-12 | Metal-embedded mask and method for manufacturing the same |
| KR1020130109543A KR101505317B1 (en) | 2012-09-20 | 2013-09-12 | Metal-embedded photomask and manufacturing method thereof |
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| TW101134458A TWI450029B (en) | 2012-09-20 | 2012-09-20 | Metal-embedded photomask and manufacturing method thereof |
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| TWI450029B true TWI450029B (en) | 2014-08-21 |
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| CN105742414A (en) * | 2016-02-26 | 2016-07-06 | 海迪科（南通）光电科技有限公司 | Flexible film for micro/nano PSS preparation and preparation method of flexible film |
| CN105576097A (en) * | 2016-02-26 | 2016-05-11 | 海迪科（南通）光电科技有限公司 | Method for preparing micro-nano PSS (Patterned Sapphire Substrate) by photoetching of nano flexible film |
| CN105609607A (en) * | 2016-02-26 | 2016-05-25 | 海迪科（南通）光电科技有限公司 | Soft film structure for preparing micro-nano PSS |
| CN109445243A (en) * | 2018-12-21 | 2019-03-08 | 苏州瑞而美光电科技有限公司 | A kind of lithography mask version and preparation method thereof |
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| TW201208974A (en) * | 2010-08-23 | 2012-03-01 | Univ Nat Cheng Kung | Manufacturing method of micro/nano-particle and micro/nano-particle unit |
| US20120217621A1 (en) * | 2011-01-19 | 2012-08-30 | International Business Machines Corporation | Structure and method for hard mask removal on an soi substrate without using cmp process |
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| EP0674223B1 (en) * | 1994-02-14 | 1997-05-02 | International Business Machines Corporation | An attenuating phase-shift mask structure and fabrication method |
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| CN101598894B (en) * | 2009-07-07 | 2011-07-27 | 友达光电股份有限公司 | Photomask, thin film transistor element and method for manufacturing thin film transistor element |
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| TW201208974A (en) * | 2010-08-23 | 2012-03-01 | Univ Nat Cheng Kung | Manufacturing method of micro/nano-particle and micro/nano-particle unit |
| US20120217621A1 (en) * | 2011-01-19 | 2012-08-30 | International Business Machines Corporation | Structure and method for hard mask removal on an soi substrate without using cmp process |
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| Jhih-Nan Yan and Yung-Chun Lee, Fabrication of metal embedded photo-mask for sub-micrometer scaled photolithography and patterning sapphire substrate, NEMS 2012, Kyoto, JAPAN, March 5-8,2012 * |
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| KR20140038309A (en) | 2014-03-28 |
| CN103676467A (en) | 2014-03-26 |
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| TW201413371A (en) | 2014-04-01 |
| KR101505317B1 (en) | 2015-03-23 |
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