TWI442415B - Conductive paste composition - Google Patents
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- TWI442415B TWI442415B TW97125511A TW97125511A TWI442415B TW I442415 B TWI442415 B TW I442415B TW 97125511 A TW97125511 A TW 97125511A TW 97125511 A TW97125511 A TW 97125511A TW I442415 B TWI442415 B TW I442415B
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- 239000000203 mixture Substances 0.000 title claims description 15
- 239000000843 powder Substances 0.000 claims description 42
- 239000000758 substrate Substances 0.000 claims description 16
- 239000000919 ceramic Substances 0.000 claims description 15
- 229910045601 alloy Inorganic materials 0.000 claims description 14
- 239000000956 alloy Substances 0.000 claims description 14
- 229910017727 AgNi Inorganic materials 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 3
- -1 organic acid salts Chemical class 0.000 claims description 3
- 150000003839 salts Chemical class 0.000 claims description 2
- 239000004020 conductor Substances 0.000 description 18
- 239000010949 copper Substances 0.000 description 18
- 238000000034 method Methods 0.000 description 17
- 229910052751 metal Inorganic materials 0.000 description 14
- 239000002184 metal Substances 0.000 description 14
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 13
- 238000010304 firing Methods 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 238000000889 atomisation Methods 0.000 description 6
- 239000007788 liquid Substances 0.000 description 5
- 229910000510 noble metal Inorganic materials 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000007921 spray Substances 0.000 description 4
- 229910000990 Ni alloy Inorganic materials 0.000 description 3
- 238000005275 alloying Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 238000009692 water atomization Methods 0.000 description 3
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000001856 Ethyl cellulose Substances 0.000 description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 2
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 229920001249 ethyl cellulose Polymers 0.000 description 2
- 235000019325 ethyl cellulose Nutrition 0.000 description 2
- 238000009689 gas atomisation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 2
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910000531 Co alloy Inorganic materials 0.000 description 1
- OCUCCJIRFHNWBP-IYEMJOQQSA-L Copper gluconate Chemical compound [Cu+2].OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O.OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O OCUCCJIRFHNWBP-IYEMJOQQSA-L 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229940108925 copper gluconate Drugs 0.000 description 1
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 1
- XTVVROIMIGLXTD-UHFFFAOYSA-N copper(II) nitrate Chemical compound [Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XTVVROIMIGLXTD-UHFFFAOYSA-N 0.000 description 1
- SVOAENZIOKPANY-CVBJKYQLSA-L copper;(z)-octadec-9-enoate Chemical compound [Cu+2].CCCCCCCC\C=C/CCCCCCCC([O-])=O.CCCCCCCC\C=C/CCCCCCCC([O-])=O SVOAENZIOKPANY-CVBJKYQLSA-L 0.000 description 1
- GSCLWPQCXDSGBU-UHFFFAOYSA-L copper;phthalate Chemical compound [Cu+2].[O-]C(=O)C1=CC=CC=C1C([O-])=O GSCLWPQCXDSGBU-UHFFFAOYSA-L 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- FWBOFUGDKHMVPI-UHFFFAOYSA-K dicopper;2-oxidopropane-1,2,3-tricarboxylate Chemical compound [Cu+2].[Cu+2].[O-]C(=O)CC([O-])(C([O-])=O)CC([O-])=O FWBOFUGDKHMVPI-UHFFFAOYSA-K 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910017053 inorganic salt Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
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- Conductive Materials (AREA)
- Powder Metallurgy (AREA)
- Manufacturing Of Printed Wiring (AREA)
Description
本發明係關於一種導電性糊組成物,特別是關於一種能以950至1200℃之高溫燒成的耐熱導電性糊組成物。The present invention relates to a conductive paste composition, and more particularly to a heat-resistant conductive paste composition which can be fired at a high temperature of 950 to 1200 °C.
以形成電子電路或積層電子零件中各種基板之導電電路或電極的方法而言,一般大多使用導電性糊。In the method of forming a conductive circuit or an electrode of various substrates in an electronic circuit or a laminated electronic component, a conductive paste is generally used.
導電性糊,一般係由樹脂系黏合劑與溶劑所構成之有機媒液(vehicle)中分散有作為導電成分之金屬導體粉末的糊組成物,其於印刷或塗佈於陶瓷基板或陶瓷生胚片等之後,藉由燒成使該有機媒液蒸發、分解,使剩下之導電成分成為燒結體以形成電氣之優良導體,藉由該導電成分之燒結體形成導電電路或電極。實際之使用上,係在將導電性糊塗布或填充於陶瓷基板或陶瓷生胚片之表面或內部之孔的狀態下,與該基板或板片一起實施加熱處理以蒸發、分解以除去有機媒液,並將作為導電成分之金屬導體粉末彼此燒結而形成可通電之導電電路或電極。The conductive paste is generally a paste composition in which a metal conductor powder as a conductive component is dispersed in an organic vehicle composed of a resin-based adhesive and a solvent, and is printed or coated on a ceramic substrate or a ceramic green body. After the sheet or the like, the organic vehicle liquid is evaporated and decomposed by firing, and the remaining conductive component is formed into a sintered body to form an electric excellent conductor, and a conductive circuit or an electrode is formed by the sintered body of the conductive component. In actual use, the conductive paste is coated or filled in a hole on the surface or inside of the ceramic substrate or the ceramic green sheet, and heat-treated with the substrate or the sheet to evaporate and decompose to remove the organic medium. The liquid and the metal conductor powder as a conductive component are sintered to each other to form a conductive circuit or electrode that can be energized.
導電成分而言,考量到價格、導電性及可在大氣中燒成等因素,係廣泛使用Ag粉末。然而,在印刷或塗布有導電性糊之陶瓷基板或陶瓷生胚片以約900℃前後之低溫燒成時,雖能以Ag粉末來對應,但依用途該陶瓷基板或陶瓷生胚片有時會以約950℃至1200℃之高溫燒成。此時,若以Ag粉末用作為導體之糊來形成配線或電極時,Ag 會擴散至基板或板片內,而使得有時會產生斷線或偏析等不良情形。推測其係由於Ag之熔點約為961.9℃與燒成溫度相較較低。因此,以往係採用下述方法,亦即藉由採用使熔點較Ag高且即使在大氣中燒成亦不氧化之Pt(1770℃)及Pd(熔點為1550℃)等貴金屬與Ag合金化的方法、或將耐熱金屬層之被膜形成於Ag粉末之表面的方法,以確保導體之耐熱性。In terms of conductive components, Ag powder is widely used in consideration of factors such as price, conductivity, and firing in the atmosphere. However, when a ceramic substrate or a ceramic green sheet which is printed or coated with a conductive paste is fired at a low temperature of about 900 ° C, it can be made of Ag powder, but the ceramic substrate or ceramic green sheet may be used depending on the application. It is fired at a high temperature of about 950 ° C to 1200 ° C. At this time, when the Ag powder is used as a conductor paste to form wiring or electrodes, Ag It will spread into the substrate or the sheet, which may cause problems such as disconnection or segregation. It is presumed that the melting point of Ag is about 961.9 ° C and the firing temperature is relatively low. Therefore, in the past, a noble metal such as Pt (1770 ° C) and Pd (melting point of 1550 ° C) which is higher in melting point than Ag and which is not oxidized even in the atmosphere is alloyed with Ag. A method or a method of forming a film of a heat resistant metal layer on the surface of an Ag powder to ensure heat resistance of the conductor.
例如,專利文獻1揭示有一種附有耐熱金屬層之銀粉,其係將鎳、鎳合金、鈷或鈷合金等耐熱金屬層之被膜形成於銀粉末之表面。For example, Patent Document 1 discloses a silver powder having a heat resistant metal layer formed on a surface of a silver powder by a film of a heat resistant metal layer such as nickel, a nickel alloy, cobalt or a cobalt alloy.
專利文獻1:日本特開2003-306701號公報Patent Document 1: Japanese Patent Laid-Open Publication No. 2003-306701
然而,若為了提升耐熱性而使用屬貴金屬之Pt或Pd時,會有使導電性糊之製造成本上升之缺點。不使用貴金屬而提升導體之耐熱性的方法,如專利文獻1所揭示將耐熱金屬層之被膜形成於Ag粉末之表面的方法,由於會增加鍍敷等之被膜形成步驟,因此同樣地製造成本亦會上升。However, when Pt or Pd which is a noble metal is used in order to improve heat resistance, there is a disadvantage that the manufacturing cost of the conductive paste is increased. A method of improving the heat resistance of a conductor without using a noble metal, as disclosed in Patent Document 1, a method of forming a film of a heat resistant metal layer on the surface of an Ag powder, since the film forming step such as plating is increased, the manufacturing cost is also similar. Will rise.
本發明係有鑑於習知技術所具有之此種問題點,其目的在於提供一種電阻值較低之導電性糊組成物,其無須使用將Ag與Pt或Pd等高價貴金屬合金化或故意於Ag粉末表面形成耐熱金屬層等方法,而含有具耐熱性之導體。The present invention has such a problem in view of the prior art, and an object thereof is to provide a conductive paste composition having a low electric resistance value, which does not require the use of alloying Ag or a noble metal such as Pt or Pd or deliberately Ag. The surface of the powder forms a heat-resistant metal layer and the like, and contains a heat-resistant conductor.
本發明人發現,藉由使用一般認為合金化會使軟化點 下降而不賦予耐熱性之Ag與Ni合金之霧化粉末,可獲得具有耐熱性之導體,本發明之導電性糊組成物,其特徵在於:係於AgNi合金之霧化粉末添加有含有Cu之物質來作為導電成分者。The inventors have found that the softening point is caused by the general use of alloying. The atomized powder of the Ag and Ni alloy which is not imparted with heat resistance can obtain a conductor having heat resistance, and the conductive paste composition of the present invention is characterized in that the atomized powder of the AgNi alloy is added with Cu. The substance acts as a conductive component.
亦即,若在大氣環境氣氛將Ag與Ni合金之霧化粉末加以燒成時,在燒成中合金中之Ni會氧化,而於AgNi合金之霧化粉末之表面形成Ni之氧化物。由於以此方式於AgNi合金之霧化粉末之表面自然形成Ni氧化物之被膜,因此恰好呈現於Ag粉末表面實施氧化物之塗布的狀態,而提升耐熱性。又,由於Cu在1000℃以下會氧化而成為CuO,在1000℃以上之溫度會成為Cu2 O(熔點為1230℃),因此可進一步提升耐熱性。That is, when the atomized powder of Ag and the Ni alloy is fired in an atmospheric atmosphere, Ni in the alloy is oxidized during firing, and an oxide of Ni is formed on the surface of the atomized powder of the AgNi alloy. Since the film of the Ni oxide is naturally formed on the surface of the atomized powder of the AgNi alloy in this manner, the surface of the Ag powder is applied in a state where the coating of the oxide is performed, and the heat resistance is improved. Further, since Cu is oxidized at 1000 ° C or lower to become CuO, and Cu 2 O (melting point is 1230 ° C) at a temperature of 1000 ° C or higher, heat resistance can be further improved.
根據本發明,可提供一種電阻值較低之導電性糊組成物,其無須使用將Ag與Pt或Pd等高價貴金屬合金化或故意於Ag粉末表面形成耐熱金屬層等方法,而含有具耐熱性之導體。According to the present invention, it is possible to provide a conductive paste composition having a low electric resistance value, which does not require the use of a method of alloying Ag with a noble metal such as Pt or Pd or deliberately forming a heat resistant metal layer on the surface of the Ag powder, and contains heat resistance. The conductor.
以下,針對用以實施本發明之最佳形態作說明。Hereinafter, the best mode for carrying out the invention will be described.
由於本發明無須經過特別之步驟,而能以與製作霧化Ag粉末相同之方法獲得導電成分,因此可廉價製作具耐熱性之導電成分。Since the present invention can obtain a conductive component in the same manner as in the production of atomized Ag powder without a special step, it is possible to inexpensively produce a conductive component having heat resistance.
霧化法(atomizing)係指為了改善材料組成或組織以提升耐熱金屬材料之可靠性,以製得均質且微細之組織所實 施的方法,係將金屬之熔液噴霧並予以急速冷卻加以微細化的方法。本發明可採用之霧化法係有以下所說明之水霧化法、氣體霧化法、及真空霧化法等。Atomizing refers to the improvement of the material composition or organization to improve the reliability of the heat-resistant metal material to produce a homogeneous and fine structure. The method of applying is a method in which a molten metal is sprayed and rapidly cooled to be refined. The atomization method which can be used in the present invention includes the water atomization method, the gas atomization method, the vacuum atomization method, and the like described below.
(1)水霧化法係將射出壓力為15MPa左右之高壓水噴射至熔融金屬之熔流的方法,可製得平均粒徑約為10μm之微粉。所製得之微粉形狀大多不一定。冷卻速度約為103 ~105 K/sec。若噴射超過20MPa之高壓噴射水時,即可製得數μm左右之粒徑的微粉。(1) The water atomization method is a method of spraying high-pressure water having an injection pressure of about 15 MPa onto a molten metal molten metal to obtain a fine powder having an average particle diameter of about 10 μm. Most of the fine powder shapes produced are not necessarily. The cooling rate is approximately 10 3 ~ 10 5 K/sec. When a high-pressure spray water exceeding 20 MPa is sprayed, a fine powder having a particle diameter of about several μm can be obtained.
(2)氣體霧化法係將N2 或Ar氣體噴霧以取代水霧化之高壓水的方法。可製得氧化較少且為球狀之粉末。氣體噴霧方式有自然落下式與拘束式。(2) The gas atomization method is a method of spraying N 2 or Ar gas to replace water atomized high-pressure water. A powder which is less oxidized and spherical in shape can be obtained. The gas spray method has a natural drop type and a restraint type.
(3)真空霧化法係於真空中藉由壓差噴出充分吸收有H2 之熔融金屬的方法,可製得球狀之粉末。純度係與氣體噴霧所製造者相同程度。(3) The vacuum atomization method is a method in which a molten powder of H 2 is sufficiently absorbed by a pressure difference in a vacuum to obtain a spherical powder. The purity is the same as that produced by the gas spray.
(4)其他霧化法亦可採用「藉由相對之輥間之空蝕現象(caviatation)將熔融金屬流予以粉化,在水中驟冷之雙輥霧化法」、「藉由與旋轉體之碰撞將熔融金屬流粉化,在水中驟冷之衝擊霧化法」、或「將熔融金屬流注入旋轉之水中,以製得急速冷卻凝固粉之旋轉水霧化法」等。(4) Other atomization methods may also employ "two-roll atomization method of pulverizing a molten metal stream by caviatation between rolls, and quenching in water", "by rotating body The collision atomization method in which the molten metal is pulverized, and quenched in water, or the "rotating water atomization method in which the molten metal flow is injected into the rotating water to obtain a rapid cooling solidified powder".
由於Ag之合金粉末相較於Ag為100%之粉末其電阻會變高,因此為了抑制電阻值之上升,藉由燒成於Ag粉末之表面所形成之氧化物的被膜厚度係以較薄者為較佳。另一方面,若形成於Ag粉末表面之氧化物的被膜厚度過薄時,則耐熱性會無法提升。因此,必須考量電阻值與耐 熱性之均衡以選擇較佳之合金組成。亦即,以Ag為90.0~99.9重量%且Ni為0.1~10.0重量%較佳。若Ni未滿0.1重量%時,則無法獲得與Ag為100%之粉末相同程度的耐熱性。另一方面,若Ni超過10.0重量%時,則電阻值會變高而不適合使用作為導電性糊。Since the alloy powder of Ag has a higher electric resistance than the powder of 100% of Ag, in order to suppress an increase in the electric resistance value, the film thickness of the oxide formed by firing on the surface of the Ag powder is thinner. It is better. On the other hand, when the thickness of the film formed on the surface of the Ag powder is too thin, heat resistance cannot be improved. Therefore, it is necessary to consider the resistance value and resistance The balance of heat is chosen to select the preferred alloy. That is, it is preferable that Ag is from 90.0 to 99.9% by weight and Ni is from 0.1 to 10.0% by weight. When Ni is less than 0.1% by weight, heat resistance similar to that of 100% of Ag powder cannot be obtained. On the other hand, when Ni exceeds 10.0% by weight, the electric resistance value becomes high and it is not suitable for use as a conductive paste.
AgNi合金之霧化粉末的平均粒徑,係以1.0~10.0μm較佳。未滿1.0μm之粉末係難以製造。另一方面,若超過10.0μm時,則在糊化時容易產生箔而難以製得本發明之目的之糊。The average particle diameter of the atomized powder of the AgNi alloy is preferably 1.0 to 10.0 μm. A powder of less than 1.0 μm is difficult to manufacture. On the other hand, when it exceeds 10.0 μm, it is easy to produce a foil at the time of gelatinization, and it is difficult to obtain the paste of the objective of this invention.
此外,進行Ag系之導體與低溫燒成陶瓷基板的同時燒成時,會有兩者之收縮行為大幅不同的缺點。於燒成開始後,在300~400℃下有機物(黏合劑樹脂等)會熱分解,Ag系之導電性糊會因Ag燒結而開始收縮,但由於低溫燒成陶瓷生胚片係以玻璃為主成分,因此一般係在該玻璃成分開始熔解之650℃附近才開始收縮。Further, when the Ag-based conductor and the low-temperature fired ceramic substrate are simultaneously fired, there is a disadvantage that the shrinkage behavior of the two is greatly different. After the start of the firing, the organic substance (binder resin, etc.) is thermally decomposed at 300 to 400 ° C, and the Ag-based conductive paste starts to shrink due to Ag sintering, but the low-temperature fired ceramic green sheet is made of glass. The main component is therefore generally contracted only around 650 ° C where the glass component begins to melt.
因此,在約400℃至650℃附近之溫度區域,Ag系之導體與低溫燒成陶瓷基板之收縮率的差會隨著溫度上升而擴大。當兩者之收縮率的差變大時,在兩者之接合部會產生較大熱應力,有時會造成燒成基板翹曲、或接合部之接合強度降低而導致接合部剝離。再者,近年來伴隨著電子零件之無鉛化,陶瓷材料亦逐漸以無鉛之材料為主流。因此,由於陶瓷之收縮開始溫度係往高溫側移動且陶瓷本身會結晶化,因此熱收縮之速度亦變得相當快。因此,Ag系導體之收縮率與低溫燒成陶瓷基板之收縮率的差係更為擴 大,於燒成後之基板產生龜裂或翹曲之情形已變得更為顯著。Therefore, in the temperature range of about 400 ° C to 650 ° C, the difference in shrinkage ratio between the Ag-based conductor and the low-temperature fired ceramic substrate increases as the temperature rises. When the difference in the shrinkage ratio between the two becomes large, a large thermal stress is generated in the joint portion between the two, and the sintered substrate may be warped or the joint strength of the joint portion may be lowered to cause the joint portion to peel off. Furthermore, in recent years, with the lead-free electronic components, ceramic materials have gradually become the mainstream of lead-free materials. Therefore, since the shrinkage start temperature of the ceramic moves toward the high temperature side and the ceramic itself crystallizes, the speed of heat shrinkage also becomes quite fast. Therefore, the difference between the shrinkage ratio of the Ag-based conductor and the shrinkage ratio of the low-temperature fired ceramic substrate is further expanded. Large, the cracking or warping of the substrate after firing has become more pronounced.
因此,若使用本發明之霧化粉末,由於Ni氧化物之被膜係自然形成於Ag粉末之表面,因此可期待具有提高導體之熱收縮開始溫度的作用。因此,可抑制基板之龜裂或翹曲的產生。Therefore, when the atomized powder of the present invention is used, since the film of Ni oxide is naturally formed on the surface of the Ag powder, it is expected to have an effect of increasing the heat shrinkage starting temperature of the conductor. Therefore, the occurrence of cracks or warpage of the substrate can be suppressed.
較佳為將含有Cu之物質以Cu換算為0.1至15.0重量%添加於導電性糊中。若以Cu換算未滿0.1重量%,則無法提升耐熱性,若以Cu換算超過15.0重量時,則電阻值會變高。含有Cu之物質而言,可選自Cu、CuO、Cu2 O、Cu之無機鹽或Cu之有機酸鹽中之1種以上之物質。Cu之無機鹽而言,可列舉例如氯化銅或硝酸銅等。Cu之有機酸鹽而言,可列舉例如油酸銅、檸檬酸銅、葡萄糖酸銅、及苯二甲酸銅等。Preferably, the substance containing Cu is added to the conductive paste in an amount of 0.1 to 15.0% by weight in terms of Cu. When it is less than 0.1% by weight in terms of Cu, heat resistance cannot be improved, and when it exceeds 15.0 by weight in terms of Cu, the electric resistance value becomes high. The substance containing Cu may be one or more selected from the group consisting of inorganic salts of Cu, CuO, Cu 2 O, Cu, and organic acid salts of Cu. Examples of the inorganic salt of Cu include copper chloride or copper nitrate. Examples of the organic acid salt of Cu include copper oleate, copper citrate, copper gluconate, and copper phthalate.
導電性糊中導體粉末與有機媒液之比例,可採用一般之摻合比例。例如,導體粉末重量份對有機媒液重量份係以80對20至90對10較佳。若導體粉末未滿80重量份(有機媒液超過20重量份)時,則由於導體之電阻值會變高而降低電氣特性因此不佳。若導體粉末超過90重量份(有機媒液未滿10重量份)時,則由於無法獲得適切之糊黏度而會降低對通孔之填充及配線圖案形成之作業效率因此不佳。The ratio of the conductor powder to the organic vehicle in the conductive paste can be a general blending ratio. For example, the weight fraction of the conductor powder is preferably 80 to 20 to 90 to 10 by weight based on the weight of the organic vehicle. When the conductor powder is less than 80 parts by weight (more than 20 parts by weight of the organic vehicle), the electrical resistance of the conductor is increased to lower the electrical characteristics, which is not preferable. When the conductive powder exceeds 90 parts by weight (the organic vehicle is less than 10 parts by weight), the workability for filling the via holes and the formation of the wiring pattern is lowered because the appropriate paste viscosity cannot be obtained.
有機媒液係包含黏合劑樹脂(例如,乙基纖維素系樹脂、及丙烯酸系樹脂等)、與有機溶劑(例如,松香醇、及 乙酸丁卡必醇酯等),視須要亦可添加可塑劑、分散劑、或玻璃料(glass frit)等。The organic vehicle liquid includes a binder resin (for example, an ethyl cellulose resin or an acrylic resin), and an organic solvent (for example, rosin alcohol, and Butyl carbitol acetate, etc.) may also be added with a plasticizer, a dispersant, or a glass frit, if necessary.
以下,雖說明本發明之實施例,但本發明並不限於下述實施例,在不逸脫本發明之技術範圍內可作適當變更與修正。In the following, the embodiments of the present invention are described, but the present invention is not limited to the following embodiments, and may be appropriately modified and modified without departing from the technical scope of the present invention.
如以下表1所示,將平均粒徑為5μm之Ag與Ni之合金(Ag為97重量%,Ni為3重量%)的霧化粉末(以N2 噴霧所製成者)75至80重量%、以Cu換算含有Cu之物質為0.1至15.0重量%、及以松香醇溶解乙基纖維素樹脂之有機媒液10.0至19.9重量%使用三輥磨機加以混合,以製得導電性糊。As shown in the following Table 1, an atomized powder (manufactured by N 2 spray) of an alloy of Ag and Ni having an average particle diameter of 5 μm (Ag of 97% by weight, Ni of 3% by weight) was used in an amount of 75 to 80 by weight. %, an organic medium containing Cu in an amount of 0.1 to 15.0% by weight in terms of Cu, and 10.0 to 19.9% by weight of an organic vehicle solution in which an ethyl cellulose resin is dissolved in rosin alcohol is mixed using a three-roll mill to obtain a conductive paste.
又,為了供比較,如以下表2所示,將同上之Ag與Ni之合金的霧化粉末80重量%、及同上之有機媒液20重量%使用三輥磨機加以混合,或將同上之Ag與Ni之合金的霧化粉末80重量%、不含Cu之無機物5.0重量%、及同上之有機媒液15.0重量%使用三輥磨機加以混合,藉此製得比較例之導電性糊。Further, for comparison, as shown in the following Table 2, 80% by weight of the atomized powder of the alloy of Ag and Ni, and 20% by weight of the organic vehicle liquid of the above, were mixed using a three-roll mill, or the same as above. 80% by weight of the atomized powder of the alloy of Ag and Ni, 5.0% by weight of the inorganic material containing no Cu, and 15.0% by weight of the organic vehicle liquid of the same composition were mixed using a three-roll mill to obtain a conductive paste of a comparative example.
接著,使用此等導電性糊,藉由網版印刷於氧化鋁基板(未圖示)上形成如圖1所示之配線圖案1,以120℃進行10分鐘之乾燥後,以大氣環境氣氛下之批式燒成爐(batch type kiln),針對實施例6係在以1200℃保持20分鐘之條件下燒成,針對其他所有實施例及比較例則在以1150℃保持20分鐘之條件下燒成。Next, using these conductive pastes, a wiring pattern 1 as shown in FIG. 1 was formed by screen printing on an alumina substrate (not shown), and dried at 120 ° C for 10 minutes, and then exposed to an atmospheric atmosphere. The batch type kiln was fired under the conditions of holding at 1200 ° C for 20 minutes for Example 6, and for 20 minutes at 1150 ° C for all other examples and comparative examples. to make.
接著,以目視確認燒成後之基板表面有無斷線。又,在圖1所示之配線圖案1中,針對圖2所示之配線圖案2(線寬W=100μm),測量將電阻換算成每單位面積之數值的薄片電阻值(mΩ/mm2 /10μm)。將該有無斷線及薄片電阻值表示於表1及表2。Next, it was visually confirmed whether or not the surface of the substrate after firing was broken. Further, in the wiring pattern 1 shown in FIG. 1, the sheet resistance value (mΩ/mm 2 / of the value per unit area) was measured for the wiring pattern 2 (line width W = 100 μm) shown in FIG. 2 . 10 μm). The presence or absence of the disconnection and sheet resistance values are shown in Tables 1 and 2.
如表1所示,本發明之實施例1至15相關者皆無法在配線圖案觀察到斷線,可知本發明之導電性糊組成物係具有至1200℃之耐熱性且為電阻值較低之導電物質。As shown in Table 1, in the examples 1 to 15 of the present invention, the disconnection was not observed in the wiring pattern, and it was found that the conductive paste composition of the present invention has heat resistance to 1200 ° C and has a low electric resistance value. Conductive material.
然而,由於比較例1未添加任何AgNi合金之霧化粉末,比較例2至6則於AgNi合金之霧化粉末添加不含Cu之無機物,因此可在圖1所示之圖案1的某些部位確認到斷線,而無法測量薄片電阻。However, since Comparative Example 1 did not add any atomized powder of AgNi alloy, Comparative Examples 2 to 6 added inorganic substances containing no Cu to the atomized powder of the AgNi alloy, and thus may be in some parts of the pattern 1 shown in FIG. It is confirmed that the wire is broken and the sheet resistance cannot be measured.
本發明之導電性糊組成物由於耐熱性優異,因此可在暴露於高溫使用環境下之電子零件相關產業廣泛使用。Since the conductive paste composition of the present invention is excellent in heat resistance, it can be widely used in an electronic component related industry exposed to a high-temperature use environment.
1‧‧‧配線圖案1‧‧‧Wiring pattern
2‧‧‧配線圖案2‧‧‧Wiring pattern
圖1係表示配線圖案之一例的俯視圖。Fig. 1 is a plan view showing an example of a wiring pattern.
圖2係表示圖1之配線圖案的一部分的圖。Fig. 2 is a view showing a part of the wiring pattern of Fig. 1.
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| CN103170617B (en) * | 2011-12-23 | 2016-04-27 | 比亚迪股份有限公司 | The sintering method that a kind of modification Ag cream and application thereof and power model chips are connected with matrix |
| WO2013137469A1 (en) | 2012-03-16 | 2013-09-19 | エム・テクニック株式会社 | Solid gold-nickel alloy nanoparticles and production method thereof |
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