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TWI441574B - Metal base circuit substrate - Google Patents

Metal base circuit substrate Download PDF

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Publication number
TWI441574B
TWI441574B TW098117585A TW98117585A TWI441574B TW I441574 B TWI441574 B TW I441574B TW 098117585 A TW098117585 A TW 098117585A TW 98117585 A TW98117585 A TW 98117585A TW I441574 B TWI441574 B TW I441574B
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TW
Taiwan
Prior art keywords
insulating layer
circuit portion
linear expansion
ppm
metal base
Prior art date
Application number
TW098117585A
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Chinese (zh)
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TW201004501A (en
Inventor
西太樹
宮川健志
山崎清一
齊木高志
Original Assignee
電氣化學工業股份有限公司
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Publication of TW201004501A publication Critical patent/TW201004501A/en
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Publication of TWI441574B publication Critical patent/TWI441574B/en

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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • H05K1/05Insulated conductive substrates, e.g. insulated metal substrate
    • H05K1/056Insulated conductive substrates, e.g. insulated metal substrate the metal substrate being covered by an organic insulating layer
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/22Secondary treatment of printed circuits
    • H05K3/28Applying non-metallic protective coatings
    • H05K3/285Permanent coating compositions
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21KNON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/0271Arrangements for reducing stress or warp in rigid printed circuit boards, e.g. caused by loads, vibrations or differences in thermal expansion
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/0274Optical details, e.g. printed circuits comprising integral optical means
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/02Fillers; Particles; Fibers; Reinforcement materials
    • H05K2201/0203Fillers and particles
    • H05K2201/0206Materials
    • H05K2201/0209Inorganic, non-metallic particles
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/06Thermal details
    • H05K2201/068Thermal details wherein the coefficient of thermal expansion is important
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09Shape and layout
    • H05K2201/09209Shape and layout details of conductors
    • H05K2201/09654Shape and layout details of conductors covering at least two types of conductors provided for in H05K2201/09218 - H05K2201/095
    • H05K2201/09781Dummy conductors, i.e. not used for normal transport of current; Dummy electrodes of components
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10007Types of components
    • H05K2201/10106Light emitting diode [LED]
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/20Details of printed circuits not provided for in H05K2201/01 - H05K2201/10
    • H05K2201/2054Light-reflecting surface, e.g. conductors, substrates, coatings, dielectrics
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/0058Laminating printed circuit boards onto other substrates, e.g. metallic substrates
    • H05K3/0061Laminating printed circuit boards onto other substrates, e.g. metallic substrates onto a metallic substrate, e.g. a heat sink
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/84Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841Reflective coatings, e.g. dielectric Bragg reflectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/855Optical field-shaping means, e.g. lenses
    • H10H20/856Reflecting means
    • H10W90/00
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49117Conductor or circuit manufacturing
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49117Conductor or circuit manufacturing
    • Y10T29/49124On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49126Assembling bases
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49117Conductor or circuit manufacturing
    • Y10T29/49124On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155Manufacturing circuit on or in base
    • Y10T29/49165Manufacturing circuit on or in base by forming conductive walled aperture in base
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/12All metal or with adjacent metals
    • Y10T428/12493Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12535Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
    • Y10T428/12556Organic component
    • Y10T428/12569Synthetic resin
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/24Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24917Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/24Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24926Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including ceramic, glass, porcelain or quartz layer
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/25Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles
    • Y10T428/252Glass or ceramic [i.e., fired or glazed clay, cement, etc.] [porcelain, quartz, etc.]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Insulated Metal Substrates For Printed Circuits (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
  • Non-Metallic Protective Coatings For Printed Circuits (AREA)

Description

金屬基底電路基板Metal base circuit substrate

本發明係關於使用於液晶顯示裝置等之要求散熱性及薄型化的領域之金屬基底電路基板,該液晶顯示裝置係使用LED(Light-emitting diode;發光二極體)作為光源。The present invention relates to a metal base circuit substrate used in a field requiring heat dissipation and thinning of a liquid crystal display device or the like. The liquid crystal display device uses an LED (Light-emitting diode) as a light source.

作為液晶背光之光源,可列舉CCFL(Cold Cathode Fluorescent Lamp;冷陰極螢光燈)或LED。Examples of the light source of the liquid crystal backlight include a CCFL (Cold Cathode Fluorescent Lamp) or an LED.

CCFL具有容易使用及長壽命的優點,LED具有顏色再現性優良、高亮度且薄型,因不使用水銀的緣故,相較於CCFL,具有環境負載低且耐振動及耐衝擊強,且可在廣範圍之溫度區域內(-40℃~85℃)使用,更依使用環境而具有5萬小時之壽命的優點。CCFL has the advantages of easy use and long life. LED has excellent color reproducibility, high brightness and thin shape. Because it does not use mercury, it has low environmental load, vibration resistance and impact resistance compared with CCFL. It is used in the temperature range of the range (-40°C~85°C), and has the advantage of 50,000 hours of life depending on the environment.

LED之發光效率比CCFL低,所以,在類似液晶背光內部的密閉空間中,LED附近之溫度具有比CCFL增高的傾向。在此種條件下,因亮度會降低,而需要昇高電流值,所以招致發熱增加,更使得溫度上昇。The luminous efficiency of the LED is lower than that of the CCFL. Therefore, in a sealed space similar to the inside of the liquid crystal backlight, the temperature in the vicinity of the LED tends to be higher than that of the CCFL. Under such conditions, since the brightness is lowered and the current value needs to be increased, the heat generation is increased and the temperature is increased.

因此,隨著LED之溫度上昇,會促進半導體元件之劣化,從而造成LED的壽命縮短。因此,在裝設LED之印刷電路板上,要求有散熱性。Therefore, as the temperature of the LED rises, the deterioration of the semiconductor element is promoted, resulting in a shortened life of the LED. Therefore, heat dissipation is required on a printed circuit board on which an LED is mounted.

作為裝設LED之印刷電路板的散熱方法,具有在印刷電路板上透過熱傳導性材料而使熱量逃出框體的方法(參照專利文獻1)。但是,此方法較難在單體之印刷電路板上朝框體散熱,而需要有副構件,從而造成成本增高,故而並不理想。As a method of dissipating heat of a printed circuit board on which an LED is mounted, there is a method of transmitting heat to a frame by transmitting a thermally conductive material on a printed circuit board (see Patent Document 1). However, this method is difficult to dissipate heat to the frame on a single printed circuit board, and a sub-member is required, which causes an increase in cost, which is not preferable.

作為其他之散熱方法,具有從印刷電路板之兼有電路圖案的散熱部分,透過散熱孔而從背面之散熱圖案使熱量逃出框體的構造(參照專利文獻2)。但卻有基板之構成複雜的問題。In another heat-dissipating method, there is a structure in which a heat-dissipating portion having a circuit pattern of a printed circuit board is passed through a heat-dissipating hole to allow heat to escape from the frame body (see Patent Document 2). However, there is a problem that the composition of the substrate is complicated.

[專利文獻1]日本特開2002-353388號公報[Patent Document 1] Japanese Patent Laid-Open Publication No. 2002-353388

[專利文獻2]日本特開2007-12856號公報[Patent Document 2] Japanese Patent Laid-Open Publication No. 2007-12856

本發明中,其課題在於,在LED背光用之基板中,藉由不使用副構件或散熱孔仍能具有良好之散熱特性及抑制彎曲量,以改善印刷電路板之電路形成時及LED裝設時的作業性。In the present invention, in the substrate for LED backlight, it is possible to have good heat dissipation characteristics and suppress the amount of bending without using sub-members or heat dissipation holes, thereby improving circuit formation and LED mounting of a printed circuit board. Workability at the time.

亦即,根據本發明,提供一種金屬基底電路基板,其包含有:絕緣層,其線膨脹係數為60ppm/℃以上、120ppm/℃以下;金屬箔,係由金屬材料所形成,且設於絕緣層之一面,線膨脹係數為10ppm/℃以上、35ppm/℃以下;電路部分及非電路部分,其形成於絕緣層之另一面,線膨脹係數為10ppm/℃以上、35ppm/℃以下;及白色膜,其形成於絕緣層、電路部分及非電路部分上,絕緣層上之電路部分與非電路部分的總面積,相對於金屬箔之面積為50%以上、95%以下,且各素材之線膨脹係數的關係為:絕緣層之線膨脹係數>金屬箔之線膨脹係數>電路部分及非電路部分之線膨脹係數。That is, according to the present invention, there is provided a metal base circuit substrate comprising: an insulating layer having a coefficient of linear expansion of 60 ppm/° C. or more and 120 ppm/° C. or less; a metal foil formed of a metal material and provided in the insulating layer One side of the layer, the coefficient of linear expansion is 10ppm/°C or more, 35ppm/°C or less; the circuit part and the non-circuit part are formed on the other side of the insulating layer, and the coefficient of linear expansion is 10ppm/°C or more and 35ppm/°C or less; a film formed on the insulating layer, the circuit portion, and the non-circuit portion, the total area of the circuit portion and the non-circuit portion on the insulating layer being 50% or more and 95% or less with respect to the area of the metal foil, and the line of each material The relationship of the expansion coefficient is: the linear expansion coefficient of the insulating layer > the linear expansion coefficient of the metal foil > the linear expansion coefficient of the circuit portion and the non-circuit portion.

另外,本發明之一個態樣中,提供一種金屬基底電路基板,其中上述絕緣層係由環氧樹脂、硬化劑及無機充填物形成,相對於絕緣層之總體積,無機充填物含有40體積%以上、70體積%以下。In addition, in one aspect of the invention, a metal base circuit substrate is provided, wherein the insulating layer is formed of an epoxy resin, a hardener, and an inorganic filler, and the inorganic filler contains 40% by volume with respect to the total volume of the insulating layer. Above 70% by volume.

另外,本發明之一個態樣中,提供一種金屬基底電路基板,其中上述硬化劑含有具備羥基及胺基之一方或雙方的物質。Further, in one aspect of the invention, there is provided a metal base circuit substrate, wherein the curing agent contains a substance having one or both of a hydroxyl group and an amine group.

另外,本發明之一個態樣中,提供一種金屬基底電路基板,其中上述白色膜含有二氧化鈦作為白色顏料,二氧化鈦係金紅石型且表面由氫氧化鋁或二氧化矽所被覆。Further, in one aspect of the invention, there is provided a metal base circuit substrate, wherein the white film contains titanium dioxide as a white pigment, a titanium dioxide-based rutile type, and a surface coated with aluminum hydroxide or cerium oxide.

根據本發明,在LED背光用之基板中,即使不使用副構件或散熱孔,仍能具有良好之散熱特性,所以,可延長LED的壽命,且抑制彎曲量,藉此,可改善印刷電路板之電路形成時及LED裝設時的作業性。According to the present invention, in the substrate for LED backlight, since the sub-member or the heat dissipation hole is not used, the heat dissipation property can be improved, so that the life of the LED can be prolonged and the amount of bending can be suppressed, whereby the printed circuit board can be improved. The workability at the time of circuit formation and LED mounting.

以下,參照圖面說明本發明之一實施形態的金屬基底電路基板。Hereinafter, a metal base circuit substrate according to an embodiment of the present invention will be described with reference to the drawings.

第1圖為採用本發明之一實施形態的金屬基底電路基板之混合積體電路模組的模式示意圖,為顯示金屬基底電路基板之剖視圖。Fig. 1 is a schematic view showing a hybrid integrated circuit module using a metal base circuit board according to an embodiment of the present invention, and is a cross-sectional view showing a metal base circuit board.

如第1圖所示,本實施形態之金屬基底電路基板,具備:金屬箔1;絕緣層2;形成於絕緣層2上之未設有金屬箔1的面上之電路部分3;形成於絕緣層2上之未設有金屬箔1的面上之非電路部分4;及形成於絕緣層2與電路部分3及非電路部分4上之白色膜5。As shown in Fig. 1, the metal base circuit board of the present embodiment includes a metal foil 1, an insulating layer 2, a circuit portion 3 formed on the surface of the insulating layer 2 on which the metal foil 1 is not provided, and an insulating layer. The non-circuit portion 4 on the surface of the layer 2 on which the metal foil 1 is not provided; and the white film 5 formed on the insulating layer 2 and the circuit portion 3 and the non-circuit portion 4.

如第1圖所示,藉由透過銲接部6將LED封裝體7搭載於電路部分3上,以形成混合積體電路模組。As shown in FIG. 1, the LED package 7 is mounted on the circuit portion 3 through the soldering portion 6, thereby forming a hybrid integrated circuit module.

本實施形態之金屬基底電路基板,其特徵為具有:絕緣層,其線膨脹係數為60ppm/℃以上、120ppm/℃以下;金屬箔,係由金屬材料所形成,且設於絕緣層之一面,線膨脹係數為10ppm/℃以上、35ppm/℃以下;電路部分及非電路部分,其形成於絕緣層之另一面,線膨脹係數為10ppm/℃以上、35ppm/℃以下;及白色膜,其形成於絕緣層、電路部分及非電路部分上。The metal base circuit board of the present embodiment is characterized in that the insulating layer has a linear expansion coefficient of 60 ppm/° C. or more and 120 ppm/° C. or less; the metal foil is formed of a metal material and is provided on one side of the insulating layer. The coefficient of linear expansion is 10 ppm/° C. or more and 35 ppm/° C. or less; the circuit portion and the non-circuit portion are formed on the other side of the insulating layer, and the coefficient of linear expansion is 10 ppm/° C. or more and 35 ppm/° C. or less; and a white film is formed. On the insulating layer, the circuit part and the non-circuit part.

另外,絕緣層上之電路部分與非電路部分的總面積,相對於金屬箔之面積為50%以上、95%以下。而且各素材之線膨脹係數的關係為:絕緣層之線膨脹係數>金屬箔之線膨脹係數>電路部分及非電路部分之線膨脹係數。Further, the total area of the circuit portion and the non-circuit portion on the insulating layer is 50% or more and 95% or less with respect to the area of the metal foil. Moreover, the relationship between the linear expansion coefficients of the materials is: the linear expansion coefficient of the insulating layer > the linear expansion coefficient of the metal foil > the linear expansion coefficient of the circuit portion and the non-circuit portion.

[電路部分及非電路部分][circuit part and non-circuit part]

本發明中,電路部分及非電路部分係由設於絕緣層上之相同導電材料(導體金屬)所構成,電路部分意味著為了驅動電子.電氣元件而流動有電流之電路部分。另外,本發明中,非電路部分意味著不利用於電氣方面的導電材料(導體金屬)。In the present invention, the circuit portion and the non-circuit portion are formed of the same conductive material (conductor metal) provided on the insulating layer, and the circuit portion means to drive the electron. A circuit portion in which a current flows with an electrical component. Further, in the present invention, the non-circuit portion means a conductive material (conductor metal) which is disadvantageous for electrical use.

本實施形態之金屬基底電路基板中,絕緣層2上之非電路部分4與電路部分3的加總面積,為50%以上、95%以下。In the metal base circuit board of the present embodiment, the total area of the non-circuit portion 4 and the circuit portion 3 on the insulating layer 2 is 50% or more and 95% or less.

若該總面積為50%以上,則可抑制金屬基底電路基板之彎曲,可容易進行以LED為主之電子零件的裝設。另外,若該總面積為95%以下,則可充分確保電路部分及非電路部分間之空間,可確保電氣可靠度。When the total area is 50% or more, the bending of the metal base circuit board can be suppressed, and the mounting of the electronic component mainly including the LED can be easily performed. Further, when the total area is 95% or less, the space between the circuit portion and the non-circuit portion can be sufficiently ensured, and electrical reliability can be ensured.

本實施形態之金屬基底電路基板中,電路部分3及非電路部分4之線膨脹係數為10ppm/℃以上、35ppm/℃以下。In the metal base circuit board of the present embodiment, the linear expansion coefficient of the circuit portion 3 and the non-circuit portion 4 is 10 ppm/° C. or more and 35 ppm/° C. or less.

可用作為電路部分3及非電路部分4之導體材料,可適宜選擇具有上述線膨脹係數之導體材料,具體而言,具有Ni、Cu、Al、Fe、si、不鏽鋼單體及該等之合金。As the conductor material of the circuit portion 3 and the non-circuit portion 4, a conductor material having the above-described linear expansion coefficient can be suitably selected, and specifically, Ni, Cu, Al, Fe, Si, a stainless steel monomer, and the like are available.

其中考慮到散熱性,又以Cu、Al或Cu與Al之合金為較佳。Among them, Cu, Al or an alloy of Cu and Al is preferable in view of heat dissipation.

本實施形態之金屬基底電路基板中,電路部分3及非電路部分4之厚度,係以18μm以上、70μm以下為較佳。In the metal base circuit board of the present embodiment, the thickness of the circuit portion 3 and the non-circuit portion 4 is preferably 18 μm or more and 70 μm or less.

當電路部分3及非電路部分4之厚度為18μm以下時,會有因製造金屬基底電路基板時之手動操作而容易產生皺紋等的問題。另外,當電路部分3及非電路部分4之厚度為70μm時,會在電路部分及非電路部分之圖案製作時產生問題。When the thickness of the circuit portion 3 and the non-circuit portion 4 is 18 μm or less, there is a problem that wrinkles and the like are likely to occur due to manual operation when manufacturing the metal base circuit substrate. Further, when the thickness of the circuit portion 3 and the non-circuit portion 4 is 70 μm, problems occur in the patterning of the circuit portion and the non-circuit portion.

[金屬箔][metal foil]

本實施形態之金屬基底電路基板中,構成金屬箔1之金屬材料的線膨脹係數為10ppm/℃以上、35ppm/℃以下。In the metal base circuit board of the present embodiment, the linear expansion coefficient of the metal material constituting the metal foil 1 is 10 ppm/° C. or more and 35 ppm/° C. or less.

可用作為金屬箔之金屬,可適宜選擇具有上述線膨脹係數之金屬,具體而言,具有Ni、Cu、Al、si、Fe、不鏽鋼單體及該等之合金。As the metal of the metal foil, a metal having the above linear expansion coefficient can be suitably selected, and specifically, Ni, Cu, Al, Si, Fe, a stainless steel monomer, and the like are available.

其中考慮到散熱性,又以Cu、Al或Cu與Al之合金為較佳。Among them, Cu, Al or an alloy of Cu and Al is preferable in view of heat dissipation.

本實施形態之金屬基底電路基板中,金屬箔1之厚度,係以150μm以上、300μm以下為較佳。In the metal base circuit board of the present embodiment, the thickness of the metal foil 1 is preferably 150 μm or more and 300 μm or less.

當金屬箔1之厚度為150μm以上時,可抑制因製造金屬基底電路基板時之手動操操而被折彎等的問題,從液晶顯示裝置之薄型化的觀點考慮,以300μm以下為較佳。When the thickness of the metal foil 1 is 150 μm or more, it is possible to suppress the problem of being bent by manual operation when manufacturing the metal base circuit board, and it is preferable that the thickness of the liquid crystal display device is 300 μm or less.

[絕緣層][Insulation]

本實施形態之金屬基底電路基板中,絕緣層2之線膨脹係數為60ppm/℃以上、120ppm/℃以下。In the metal base circuit board of the present embodiment, the linear expansion coefficient of the insulating layer 2 is 60 ppm/° C. or more and 120 ppm/° C. or less.

可用作為絕緣層之素材,可適宜選擇具有上述線膨脹係數之絕緣材,具體而言,可列舉環氧樹脂、矽酮樹脂及該等之共聚物。As the material of the insulating layer, an insulating material having the above linear expansion coefficient can be suitably selected, and specific examples thereof include an epoxy resin, an anthrone resin, and the like.

在其等之中,從耐熱性及與金屬之黏著性的理由考慮,尤其以環氧樹脂為較佳。Among these, from the viewpoint of heat resistance and adhesion to metal, an epoxy resin is particularly preferable.

亦可於此等樹脂中適宜地含有硬化劑、無機填料,更且可含有添加劑,以提高對基底之沾濕性或等級性及促進黏度之降低,減低形成時之缺陷的產生。The resin may suitably contain a curing agent or an inorganic filler, and may further contain an additive to improve the wettability or grade of the substrate and to promote the decrease in viscosity, thereby reducing the occurrence of defects during formation.

作為此添加劑,例如有泡沫消除劑、表面調整劑及濕潤分散劑等。As such an additive, for example, a foam remover, a surface conditioner, a wetting dispersant, and the like are available.

本實施形態之金屬基底電路基板中,絕緣層2之厚度,係以80μm以上、180μm以下為較佳。In the metal base circuit board of the present embodiment, the thickness of the insulating layer 2 is preferably 80 μm or more and 180 μm or less.

當絕緣層2之厚度為80μm以上時,可容易確保絕緣性,當為180μm以下時,可容易且均勻地形成絕緣層。When the thickness of the insulating layer 2 is 80 μm or more, the insulating property can be easily ensured, and when it is 180 μm or less, the insulating layer can be easily and uniformly formed.

用於絕緣層2之環氧樹脂,可採用公知之環氧樹脂,例如,可列舉雙酚A二縮水甘油醚、雙酚F二縮水甘油醚、雙酚S二縮水甘油醚、間苯二酚二縮水甘油醚、六氫-雙酚A二環氧甘油醚、聚丙二醇醚、新戊二醇二縮水甘油醚、磷苯二甲酸二縮水甘油酯、二聚酸二縮水甘油酯、三縮水甘油基異氰酸酯、四縮水甘油基二胺基二苯基甲烷、四縮水甘油基二胺基間二甲苯、酚醛多縮水甘油醚、四溴雙酚A二縮水甘油醚、雙酚六氟丙酮基縮水甘油醚等之含有環氧基的物質。As the epoxy resin used for the insulating layer 2, a known epoxy resin can be used, and examples thereof include bisphenol A diglycidyl ether, bisphenol F diglycidyl ether, bisphenol S diglycidyl ether, and resorcinol. Diglycidyl ether, hexahydro-bisphenol A diglycidyl ether, polypropylene glycol ether, neopentyl glycol diglycidyl ether, diglycidyl phthalate, dimerized acid diglycidyl ester, triglycidyl Isocyanate, tetraglycidyldiaminediphenylmethane, tetraglycidyldiamine-m-xylene, phenolic polyglycidyl ether, tetrabromobisphenol A diglycidyl ether, bisphenol hexafluoroacetoxyglycidyl An epoxy group-containing substance such as ether.

在其等之中,從耐熱性及與金屬之黏著性的理由考慮,尤其以雙酚A二縮水甘油醚、雙酚F二縮水甘油醚為較佳。Among these, bisphenol A diglycidyl ether and bisphenol F diglycidyl ether are preferable in view of heat resistance and adhesion to metal.

環氧樹脂中之氯化物離子濃度,係以1000ppm以下為較佳,尤其以500ppm以下為更佳。The chloride ion concentration in the epoxy resin is preferably 1000 ppm or less, more preferably 500 ppm or less.

當環氧樹脂組成物中之氯化物離子濃度偏高時,則在高溫、高濕、直流乃至交流電壓下,會引起離子性雜質的移動,因而會有電絕緣性下降的傾向。When the concentration of the chloride ion in the epoxy resin composition is high, the ionic impurities are caused to move under high temperature, high humidity, direct current, or even an alternating voltage, and electrical insulating properties tend to be lowered.

作為環氧樹脂之硬化劑,以具有與環氧基反應之氫氧基或胺基的一方或雙方的物質為較佳。例如,具有作為該環氧樹脂之硬化劑的聚胺、多酚。As the curing agent for the epoxy resin, a substance having one or both of a hydroxyl group or an amine group which reacts with an epoxy group is preferred. For example, it has a polyamine or a polyphenol which is a hardener of this epoxy resin.

在使用環氧樹脂之硬化劑,尤其是使用含有氫氧基之物質的情況,還可使用硬化促進劑。In the case of using a hardener of an epoxy resin, particularly a substance containing a hydroxyl group, a hardening accelerator may also be used.

作為硬化促進劑,以咪唑類為較佳。例如,以2-甲基咪唑、2-十一烷基咪唑、2-十七基咪唑、2-二甲基咪唑、2-甲基-4-甲基咪唑、2-苯基咪唑、2-苯基-4-甲基咪唑、1-苯甲基-2-甲基咪唑、1-苯甲基-2-苯基咪唑、2,3-二氫-1H-吡咯並[1,2-a]苯並咪唑、2-苯基-4,5-二羥基甲基咪唑、2,4-二氨基-6-{2’-甲基咪唑-(1’)}-乙基-s-三、2,4-二胺基-6-{2’-十一烷基咪唑-(1’)}-乙基-s-三、1-氰甲基-2-甲基咪唑等為較佳。As the hardening accelerator, imidazoles are preferred. For example, 2-methylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 2-dimethylimidazole, 2-methyl-4-methylimidazole, 2-phenylimidazole, 2- Phenyl-4-methylimidazole, 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, 2,3-dihydro-1H-pyrrolo[1,2-a Benzimidazole, 2-phenyl-4,5-dihydroxymethylimidazole, 2,4-diamino-6-{2'-methylimidazolium-(1')}-ethyl-s-three 2,4-Diamino-6-{2'-undecylimidazole-(1')}-ethyl-s-three Preferably, 1-cyanomethyl-2-methylimidazole or the like is preferred.

在其等之中,從提高耐濕可靠度及Tg(玻璃轉移溫度)的理由考慮,尤其以2,3-二氫-1H-吡咯並[1,2-a]苯並咪唑為較佳。Among these, from the viewpoint of improving moisture resistance reliability and Tg (glass transition temperature), 2,3-dihydro-1H-pyrrolo[1,2-a]benzimidazole is particularly preferable.

硬化促進劑之添加量,係以0.005份以上、5份以下為較佳。The amount of the hardening accelerator added is preferably 0.005 parts or more and 5 parts or less.

當硬化促進劑之添加量為5份以下時,則操作時間增長,可抑制因黏度增加所造成的作業性的下降,當為0.005份以上時,則硬化時之高溫加熱時間變短,從成本及作業性之觀點考慮而較為理想。When the addition amount of the hardening accelerator is 5 parts or less, the operation time is increased, and the workability due to the increase in viscosity can be suppressed. When the amount is 0.005 parts or more, the high-temperature heating time at the time of curing becomes short, and the cost is reduced. It is ideal from the viewpoint of workability.

作為含於絕緣層2內之無機填料,以電絕緣性且熱傳導性優良者為較佳,例如,具有二氧化矽、氧化鋁、氮化鋁、氮化矽、氮化硼、氮化硼、氧化鎂。在其等之中,從電絕緣性及熱傳導性的觀點考慮,尤其以二氧化矽、氧化鋁、氮化鋁為較佳。The inorganic filler contained in the insulating layer 2 is preferably electrically insulating and excellent in thermal conductivity, and has, for example, cerium oxide, aluminum oxide, aluminum nitride, tantalum nitride, boron nitride, or boron nitride. Magnesium oxide. Among them, in particular, cerium oxide, aluminum oxide, and aluminum nitride are preferable from the viewpoint of electrical insulating properties and thermal conductivity.

無機填料中之鈉離子濃度,係以500ppm以下為較佳,尤其以100ppm以下為更佳。The sodium ion concentration in the inorganic filler is preferably 500 ppm or less, more preferably 100 ppm or less.

當無機填料中之鈉離子濃度為500ppm以下時,則在高溫、高濕、直流乃至交流電壓下,不容易引起離子性雜質的移動,可抑制電絕緣性下降。When the sodium ion concentration in the inorganic filler is 500 ppm or less, the movement of the ionic impurities is less likely to occur under high temperature, high humidity, direct current or even alternating voltage, and the decrease in electrical insulation properties can be suppressed.

含於絕緣層2內之無機填料的含有率,係相對於絕緣層之總體積,以無機填料為40體積%以上、70體積%以下為較佳。The content of the inorganic filler contained in the insulating layer 2 is preferably 40% by volume or more and 70% by volume or less based on the total volume of the insulating layer.

當無機填料的含有率為40體積%以上時,則可獲得充分的熱傳導率,當為70體積%以下時,則在絕緣層2之形成時,不容易產生缺陷,不會損害到耐電壓、密接性。When the content of the inorganic filler is 40% by volume or more, sufficient thermal conductivity can be obtained, and when it is 70% by volume or less, when the insulating layer 2 is formed, defects are not easily generated, and the withstand voltage is not impaired. Adhesion.

另外,為了避免因無機填料而造成黏度增加,更以混合二種以上之粒徑相異的無機填料為較佳。Further, in order to avoid an increase in viscosity due to the inorganic filler, it is preferred to mix two or more kinds of inorganic fillers having different particle diameters.

絕緣層2之硬化後的熱傳導率,係以1W/m.K以上為較佳,尤其以2W/m.K以上為更佳。The thermal conductivity of the insulating layer 2 after hardening is 1W/m. K or more is preferred, especially 2W/m. K or more is better.

當硬化後的熱傳導率為1W/m.K以上時,可效率良好地將從電子零件產生之熱散熱至金屬基底電路基板背面側,又,藉由對外部進行散熱,可減低電子零件之蓄熱,進而可減小電子零件之溫度上昇,可提供長壽命之混合積體電路模組。When hardened, the thermal conductivity is 1W/m. When K or more, the heat generated from the electronic component can be efficiently dissipated to the back side of the metal base circuit substrate, and by externally dissipating heat, the heat storage of the electronic component can be reduced, and the temperature rise of the electronic component can be reduced. A long-life hybrid integrated circuit module is available.

又,為了確保裝設LED等之電子零件後對電路部分施加電壓時的絕緣性,絕緣層2之破壞電壓係以1.8Kv以上為較佳,更以2kV以上為特佳。In addition, in order to ensure insulation when a voltage is applied to the circuit portion after mounting an electronic component such as an LED, the breakdown voltage of the insulating layer 2 is preferably 1.8 KV or more, and more preferably 2 kV or more.

本實施形態之金屬基底電路基板中,構成金屬箔之金屬材料的線膨脹係數、絕緣層之線膨脹係數、以及電路部分及非電路部分之線膨脹係數的關係係以下述關係為較佳:絕緣層之線膨脹係數>金屬箔之線膨脹係數>電路部分及非電路部分之線膨脹係數。In the metal base circuit board of the present embodiment, the relationship between the linear expansion coefficient of the metal material constituting the metal foil, the linear expansion coefficient of the insulating layer, and the linear expansion coefficient of the circuit portion and the non-circuit portion is preferably the following relationship: The linear expansion coefficient of the layer > the linear expansion coefficient of the metal foil > the linear expansion coefficient of the circuit portion and the non-circuit portion.

以構成金屬箔之金屬材料的線膨脹係數比電路部分及非電路部分之線膨脹係數還大為較佳,是為了減小不欲產生彎曲的電路部分的線膨脹係數,以抑制在絕緣層上形成電路部分及非電路部分時的彎曲,而良好地保持電路形成及LED裝設時之作業性。It is preferable that the linear expansion coefficient of the metal material constituting the metal foil is larger than the linear expansion coefficient of the circuit portion and the non-circuit portion, in order to reduce the linear expansion coefficient of the circuit portion which does not want to be bent, so as to suppress the insulation layer. The bending at the time of forming the circuit portion and the non-circuit portion satisfactorily maintains the workability in circuit formation and LED mounting.

絕緣層2之非電路部分4及電路部分3載置側的面係以平滑且反光性良好為較佳。尤其為了增加密接性,絕緣層2上之非電路部分4與電路部分3的密接面,係以實施表面粗化處理、電鍍、矽烷耦合處理等為較佳。The non-circuit portion 4 of the insulating layer 2 and the surface on the side on which the circuit portion 3 is placed are preferably smooth and have good light reflectivity. In particular, in order to increase the adhesion, the adhesion surface between the non-circuit portion 4 and the circuit portion 3 on the insulating layer 2 is preferably subjected to surface roughening treatment, plating, decane coupling treatment, or the like.

為了確保LED等之電子零件裝設後的連接可靠度,絕緣層2與[電路部分3及非電路部分4]之90℃剝離強度,係以1kg/cm以上為較佳,以1.4kg/cm以上為更佳。In order to ensure connection reliability after mounting electronic components such as LEDs, the 90°C peel strength of the insulating layer 2 and the [circuit portion 3 and the non-circuit portion 4] is preferably 1 kg/cm or more, and is 1.4 kg/cm. The above is better.

[白色膜][white film]

用作為白色膜5之樹脂,係以含有一種類以上之熱硬化性樹脂、光硬化性樹脂為較佳。熱硬化性樹脂可為環氧樹脂,光硬化性樹脂可為丙烯樹脂。The resin used as the white film 5 is preferably one or more types of thermosetting resin or photocurable resin. The thermosetting resin may be an epoxy resin, and the photocurable resin may be an acrylic resin.

對用作為白色膜5之樹脂,作為白色顏料係以含有一種類以上之二氧化鈦、硫酸鋇、滑石、二氧化矽等之白色顏料為較佳。As the resin used as the white film 5, a white pigment containing one or more kinds of titanium dioxide, barium sulfate, talc, cerium oxide or the like is preferable as the white pigment.

尤其是含有二氧化鈦者,因其折射率大,且基板之光的反射率高,故而較佳。In particular, those containing titanium dioxide are preferred because of their large refractive index and high reflectance of light of the substrate.

另外,二氧化鈦係金紅石型,其穩定性極佳,所以光觸媒作用弱,與其他構造相比,可抑制樹脂成分的劣化,故而較佳。另外,為了抑制光觸媒作用,更以其表面由氫氧化鋁或二氧化矽所被覆為較佳。Further, since the titanium dioxide-based rutile type has excellent stability, the photocatalytic action is weak, and deterioration of the resin component can be suppressed as compared with other structures, which is preferable. Further, in order to suppress the photocatalytic action, it is preferred that the surface thereof be coated with aluminum hydroxide or cerium oxide.

白色顏料之含有量,係以在白色膜5之組成物中佔30質量%以上、75質量%以下為較佳。The content of the white pigment is preferably 30% by mass or more and 75% by mass or less based on the composition of the white film 5.

當白色顏料之含有量為30質量%以上時,可獲得充分之反射率,當為75質量%以下時,不會因黏度增加而降低等級性,可獲得平滑之塗膜,並可抑制反射率之降低。When the content of the white pigment is 30% by mass or more, sufficient reflectance can be obtained, and when it is 75% by mass or less, the grade is not lowered due to an increase in viscosity, a smooth coating film can be obtained, and reflectance can be suppressed. Reduced.

從LED照射光之有效利用的觀點考慮,白色膜5係以對400~800nm之可視光區域而具有70%以上之反射率為較佳,而在更佳之實施態樣中,以對460nm(藍色)與525nm(紅色)及620nm(紅色)而具有70%以上之反射率為較佳。From the viewpoint of effective use of the LED irradiation light, the white film 5 preferably has a reflectance of 70% or more for a visible light region of 400 to 800 nm, and in a more preferable embodiment, a pair of 460 nm (blue) The color ratio is preferably 525 nm (red) and 620 nm (red) with a reflectance of 70% or more.

另外,白色膜5之熱傳導率係以比絕緣層2之熱傳導率還小為較佳。Further, the thermal conductivity of the white film 5 is preferably smaller than the thermal conductivity of the insulating layer 2.

若白色膜5之熱傳導率比絕緣層2之熱傳導率還小的話,不會有LED封裝體之發熱透過電路部分而從白色膜散熱的情況,因此,LED附近之氣體環境溫度不容易上昇,進而可使LED之壽命增長。If the thermal conductivity of the white film 5 is smaller than the thermal conductivity of the insulating layer 2, the heat of the LED package does not pass through the circuit portion and dissipates heat from the white film. Therefore, the temperature of the gas environment near the LED does not easily rise. The life of the LED can be increased.

另外,為了維持機械強度,金屬基底電路基板係以總厚度為265μm以上、500μm以下為較佳。Further, in order to maintain the mechanical strength, the metal base circuit substrate preferably has a total thickness of 265 μm or more and 500 μm or less.

另外,金屬基底電路基板係以在每100mm長度之金屬基底電路基板上,其彎曲量為3mm以下為較佳。Further, the metal base circuit board preferably has a bending amount of 3 mm or less on a metal base circuit board having a length of 100 mm.

又,本發明中所使用之彎曲量,係指以絕緣層2上之非電路部分4及電路部分3為上面,在靜置於平滑且平行的面上時,將上面為下凹之情況定義為「+:正」,並將下麵為凸起的情況定義為「-:負」。彎曲之絕對值係相距金屬基底電路基板之外周的平滑且平行的面之最大高度。Further, the amount of warpage used in the present invention means that the non-circuit portion 4 and the circuit portion 3 on the insulating layer 2 are above, and when the surface is placed on a smooth and parallel surface, the upper surface is defined as a concave portion. It is "+: positive" and defines the following as "-: negative". The absolute value of the bending is the maximum height of the smooth and parallel faces of the outer periphery of the metal base circuit substrate.

本發明之金屬基底電路基板的外形,係以上下左右對稱為較佳,更以正方形及長方形為較佳。另外,在因設計上之限制而難以將外形作成上下左右對稱的情況,以在電路基板之外周執行切口等的加工為較佳。The outer shape of the metal base circuit substrate of the present invention is preferably a combination of the upper and lower sides, and preferably a square or a rectangle. Further, in the case where it is difficult to design the outer shape to be vertically symmetrical with respect to the design, it is preferable to perform a process such as slitting on the outer periphery of the circuit board.

本發明之金屬基底電路基板,即使不使用副構件及散熱孔,仍能具有良好之散熱特性,所以,可延長LED的壽命、且抑制彎曲量,藉此,可改善印刷電路板之電路形成時及LED裝設時的作業性,作為LED背光用之金屬基底電路基板,在產業上極有用途。The metal base circuit substrate of the present invention can have good heat dissipation characteristics without using sub-members and heat dissipation holes, so that the life of the LED can be prolonged and the amount of bending can be suppressed, thereby improving the circuit formation of the printed circuit board. As for the workability of the LED mounting, it is extremely useful as a metal base circuit board for LED backlights.

以上,雖陳述了本發明之實施形態,但該等僅為本發明之例示而已,本發明可採用上述以外之各種構成。The embodiments of the present invention have been described above, but these are merely examples of the present invention, and the present invention can adopt various configurations other than the above.

[實施例][Examples]

以下,針對本發明之實施例及比較例,並參照圖面及表1詳細進行說明,但本發明並不受限於該等。Hereinafter, the examples and comparative examples of the present invention will be described in detail with reference to the drawings and Table 1, but the present invention is not limited thereto.

如第1圖所示,本發明之金屬基底電路基板,係具有:金屬箔1;形成於金屬箔1之一面上的絕緣層2;形成於絕緣層2上之未設有金屬箔1的面上之電路部分3及非電路部分4;及形成於絕緣層2、電路部分3及非電路部分4上之白色膜5。又,圖中之符號7係LED封裝體。As shown in Fig. 1, the metal base circuit board of the present invention has a metal foil 1; an insulating layer 2 formed on one surface of the metal foil 1, and a surface not provided with the metal foil 1 formed on the insulating layer 2. The upper circuit portion 3 and the non-circuit portion 4; and the white film 5 formed on the insulating layer 2, the circuit portion 3, and the non-circuit portion 4. Further, the symbol 7 in the figure is an LED package.

[實施例][Examples]

實施例1之金屬基底電路基板,係依下述方式製作。The metal base circuit substrate of Example 1 was produced in the following manner.

於厚度35μm之銅箔上形成絕緣層2,且使得絕緣層2硬化後之厚度為150μm。The insulating layer 2 was formed on a copper foil having a thickness of 35 μm, and the thickness of the insulating layer 2 after hardening was 150 μm.

絕緣層2係於雙酚A型環氧樹脂(大日本油墨化學工業公司製、「EPICLON-828」中,添加作為胺類硬化劑的二胺基二苯基甲烷(日本合成化工公司製、「H84B」)來作為硬化劑,並配合平均粒徑為1.2μm之破碎狀粗粒的氧化矽(龍森公司製,「A-1」)與平均粒徑為10μm之破碎狀粗粒的氧化矽(林化成公司製,「SQ-10」),以成為絕緣層中35體積%(球狀粗粒與球狀微粒的質量比為6:4)的方式進行調配。The insulating layer 2 is a bisphenol A type epoxy resin ("EPICLON-828" manufactured by Dainippon Ink and Chemicals Co., Ltd., and added as a amine hardener, diaminodiphenylmethane (manufactured by Nippon Synthetic Chemical Co., Ltd., " H84B") is a hardening agent, and is composed of pulverized cerium oxide ("A-1", manufactured by Ronson Co., Ltd.) having an average particle diameter of 1.2 μm and crushed coarse cerium having an average particle diameter of 10 μm. ("SQ-10" manufactured by Lin Huacheng Co., Ltd.) was formulated so as to be 35 vol% (the mass ratio of spherical spherules to spherical granules was 6:4) in the insulating layer.

然後,貼合厚度為200μm之鋁箔,並藉由加熱而使絕緣層2硬化,獲得在絕緣層2中之全部無機填料中鈉離子濃度為50ppm以下的金屬基底基板。Then, an aluminum foil having a thickness of 200 μm was bonded, and the insulating layer 2 was cured by heating to obtain a metal base substrate having a sodium ion concentration of 50 ppm or less in all the inorganic fillers in the insulating layer 2.

又,針對獲得之金屬基底基板,利用抗蝕劑對預定位置進行遮覆,以電路部分及非電路部分具有各種總面積的方式對銅箔進行蝕刻後,除去抗蝕劑而形成銅製之電路部分3及非電路部分4,作成金屬基底電路基板。Further, the obtained metal base substrate is covered with a resist to cover a predetermined position, and the copper foil is etched so that the circuit portion and the non-circuit portion have various total areas, and then the resist is removed to form a copper circuit portion. 3 and the non-circuit portion 4 are formed as a metal base circuit substrate.

又,在金屬基底電路基板上塗布白色抗銲劑而作為高反射率之白色膜5,並利用熱及紫外線進行硬化。Further, a white solder resist is applied onto the metal base circuit board as a white film 5 having a high reflectance, and is cured by heat and ultraviolet rays.

此時,在電路部分3上之LED封裝體裝設部分未形成白色塗膜。作為白色抗銲劑,係採用山榮化學公司製、「SSR-6300S」。At this time, a white coating film is not formed on the LED package mounting portion on the circuit portion 3. As a white solder resist, "SSR-6300S" manufactured by Shanrong Chemical Co., Ltd. is used.

如表1所示,實施例1係使絕緣層2上非電路部分4及電路部分3的總面積,相對於金屬箔1之面積為79%,構成金屬箔1之金屬材料的線膨脹係數為23.9ppm/℃,絕緣層2之線膨脹係數為91.3ppm/℃,電路部分3及非電路部分4之線膨脹係數為17.5ppm/℃。As shown in Table 1, in the first embodiment, the total area of the non-circuit portion 4 and the circuit portion 3 on the insulating layer 2 is 79% with respect to the area of the metal foil 1, and the linear expansion coefficient of the metal material constituting the metal foil 1 is At 23.9 ppm/° C., the linear expansion coefficient of the insulating layer 2 was 91.3 ppm/° C., and the linear expansion coefficient of the circuit portion 3 and the non-circuit portion 4 was 17.5 ppm/° C.

相對於絕緣層2之總體積的無機填料的含有率為35%,將使用於絕緣層之樹脂作為環氧樹脂,又,在絕緣層中添加了胺類硬化劑。The content of the inorganic filler relative to the total volume of the insulating layer 2 was 35%, and the resin used for the insulating layer was used as an epoxy resin, and an amine hardener was added to the insulating layer.

如表1所示,在實施例1中,彎曲量係1.7mm及3mm以下的良好值。As shown in Table 1, in Example 1, the amount of bending was a good value of 1.7 mm and 3 mm or less.

如表1所示,實施例2係除了將相對於絕緣層2之總體積的無機填料的含有率設為56%以外,其餘均與實施例1相同來製成。As shown in Table 1, Example 2 was produced in the same manner as in Example 1 except that the content of the inorganic filler relative to the total volume of the insulating layer 2 was 56%.

實施例2中,彎曲量係1.1mm及不滿3mm的良好值。In Example 2, the amount of bending was a good value of 1.1 mm and less than 3 mm.

如表1所示,實施例3係除了採用酚醛(明和化成公司製,「HF-4M」)作為用於絕緣層2之硬化劑,並採用咪唑類硬化觸媒(四國化成公司製,「2,3-二氫-1H-吡咯並[1,2-a]苯並咪唑」)作為觸媒以外,其餘均與實施例1相同來製成。As shown in Table 1, in the third embodiment, phenolic ("HF-4M" manufactured by Minghe Chemical Co., Ltd.) was used as a curing agent for the insulating layer 2, and an imidazole-based curing catalyst (manufactured by Shikoku Chemicals Co., Ltd., " The same procedure as in Example 1 was carried out except that 2,3-dihydro-1H-pyrrolo[1,2-a]benzimidazole" was used as a catalyst.

實施例3中,彎曲量係1.8mm及不滿3mm的良好值。In Example 3, the amount of bending was a good value of 1.8 mm and less than 3 mm.

[比較例][Comparative example]

如表1所示,比較例1係除了將絕緣層2之非電路部分4及電路部分3的總面積設為相對於金屬箔1之面積為98%以外,其餘均與實施例1相同來製成。As shown in Table 1, Comparative Example 1 was produced in the same manner as in Example 1 except that the total area of the non-circuit portion 4 and the circuit portion 3 of the insulating layer 2 was 98% with respect to the area of the metal foil 1. to make.

比較例1中,在測定彎曲量時,其無法電路化。In Comparative Example 1, when the amount of bending was measured, it could not be circuitized.

如表1所示,比較例2係除了絕緣層2之非電路部分4及電路部分3的總面積,相對於金屬箔1之面積為30%以外,其餘均與第1實施例相同來製成。As shown in Table 1, Comparative Example 2 was produced in the same manner as in the first embodiment except that the total area of the non-circuit portion 4 and the circuit portion 3 of the insulating layer 2 was 30% with respect to the area of the metal foil 1. .

比較例2中,彎曲量係11.4mm,而產生了大幅之彎曲。In Comparative Example 2, the amount of warping was 11.4 mm, and a large bending was caused.

如表1所示,比較例3係除了金屬箔之線膨脹係數為39.7ppm/℃,並採用酚醛(明和化成公司製,「HF-4M」)作為絕緣層2所使用之硬化劑以外,其餘均與實施例1相同來製成。As shown in Table 1, in Comparative Example 3, except that the coefficient of linear expansion of the metal foil was 39.7 ppm/°C, and phenol (manufactured by Mingwa Chemical Co., Ltd., "HF-4M") was used as the hardener for the insulating layer 2, They were all produced in the same manner as in Example 1.

比較例3中,彎曲量係4.9mm,而超過了3mm。In Comparative Example 3, the amount of warping was 4.9 mm and exceeded 3 mm.

如表1所示,比較例4係除了絕緣層2之線膨脹係數為127.5ppm/℃,無機填料之體積%為0以外,其餘均與實施例1相同來製成。As shown in Table 1, Comparative Example 4 was produced in the same manner as in Example 1 except that the insulating layer 2 had a linear expansion coefficient of 127.5 ppm/° C. and the volume % of the inorganic filler was 0.

比較例4中,彎曲量係7.3mm,而超過了3mm。In Comparative Example 4, the amount of warping was 7.3 mm and exceeded 3 mm.

如表1所示,比較例5係除了電路部分及非電路部分之線膨脹係數為4.3ppm/℃,採用胺類硬化劑及酚醛(明和化成公司製、「HF-4M」)作為絕緣層2所使用之硬化劑,並採用咪唑類硬化觸媒(四國化成公司製,「2,3-二氫-1H-吡咯並[1,2-a]苯並咪唑」)以外,其餘均與實施例1相同來製成。As shown in Table 1, in Comparative Example 5, the linear expansion coefficient of the circuit portion and the non-circuit portion was 4.3 ppm/° C., and an amine-based hardener and phenolic resin ("HF-4M" manufactured by Mingwa Chemical Co., Ltd.) were used as the insulating layer 2 The hardener used is an imidazole-based hardening catalyst ("2,3-dihydro-1H-pyrrolo[1,2-a]benzimidazole" manufactured by Shikoku Kasei Co., Ltd.), and the others are implemented. Example 1 was made in the same manner.

比較例5中,彎曲量係6.7mm,而超過了3mm。In Comparative Example 5, the amount of warping was 6.7 mm and exceeded 3 mm.

如表1所示,比較例6係除了金屬箔之線膨脹係數為10.5ppm/℃,電路部分及非電路部分之線膨脹係數為23.9ppm/℃,使得電路部分及非電路部分之線膨脹係數比金屬箔之線膨脹係數還大,並採用胺類硬化劑及酚醛(明和化成公司製,「HF-4M」)作為絕緣層2所使用之硬化劑以外,其餘均與實施例1相同來製成。As shown in Table 1, in Comparative Example 6, except that the linear expansion coefficient of the metal foil was 10.5 ppm/° C., the linear expansion coefficient of the circuit portion and the non-circuit portion was 23.9 ppm/° C., so that the linear expansion coefficient of the circuit portion and the non-circuit portion was obtained. The coefficient of expansion of the metal foil is larger than that of the first embodiment, and the same applies to the first embodiment except that an amine hardener and a phenolic resin ("HF-4M" manufactured by Minghe Chemical Co., Ltd.) are used as the curing agent for the insulating layer 2. to make.

比較例6中,彎曲量係9.2mm,而超過了3mm。In Comparative Example 6, the amount of warping was 9.2 mm and exceeded 3 mm.

如上述,本發明之金屬基底電路基板相較於與比較例,可將基板之彎曲量抑制在一半以下。因此,可改善印刷電路板之電路形成時及LED裝設時的作業性。As described above, the metal base circuit substrate of the present invention can suppress the amount of warpage of the substrate to less than half as compared with the comparative example. Therefore, the workability at the time of circuit formation of the printed circuit board and the LED mounting can be improved.

1...金屬箔1. . . Metal foil

2...絕緣層2. . . Insulation

3...電路部分3. . . Circuit part

4...非電路部分4. . . Non-circuit part

5...白色膜5. . . White film

6...銲接部6. . . Welding department

7...LED封裝體7. . . LED package

第1圖為模式性顯示本發明之金屬基底電路基板的一例之說明圖(剖視圖)。Fig. 1 is an explanatory view (cross-sectional view) schematically showing an example of a metal base circuit board of the present invention.

1...金屬箔1. . . Metal foil

2...絕緣層2. . . Insulation

3...電路部分3. . . Circuit part

4...非電路部分4. . . Non-circuit part

5...白色膜5. . . White film

6...銲接部6. . . Welding department

7...LED封裝體7. . . LED package

Claims (4)

一種金屬基底電路基板,其包含有:絕緣層,其線膨脹係數為60ppm/℃以上、120ppm/℃以下;金屬箔,係由金屬材料所形成,且設於絕緣層之一面,線膨脹係數為10ppm/℃以上、35ppm/℃以下;電路部分及非電路部分,其形成於絕緣層之另一面,線膨脹係數為10ppm/℃以上、35ppm/℃以下;及白色膜,其形成於絕緣層、電路部分及非電路部分上,絕緣層上之電路部分與非電路部分的總面積,相對於金屬箔之面積為50%以上、95%以下,且各素材之線膨脹係數的關係為:絕緣層之線膨脹係數>金屬箔之線膨脹係數>電路部分及非電路部分之線膨脹係數。 A metal base circuit substrate comprising: an insulating layer having a coefficient of linear expansion of 60 ppm/° C. or more and 120 ppm/° C. or less; a metal foil formed of a metal material and disposed on one side of the insulating layer, having a coefficient of linear expansion 10 ppm/° C. or more and 35 ppm/° C. or less; a circuit portion and a non-circuit portion formed on the other surface of the insulating layer, having a linear expansion coefficient of 10 ppm/° C. or more and 35 ppm/° C. or less; and a white film formed on the insulating layer, In the circuit part and the non-circuit part, the total area of the circuit part and the non-circuit part on the insulating layer is 50% or more and 95% or less with respect to the area of the metal foil, and the relationship between the linear expansion coefficients of the respective materials is: the insulating layer The coefficient of linear expansion > the coefficient of linear expansion of the metal foil > the coefficient of linear expansion of the circuit portion and the non-circuit portion. 如申請專利範圍第1項之金屬基底電路基板,其中絕緣層係由環氧樹脂、硬化劑及無機充填物形成,相對於絕緣層之總體積,無機充填物含有40體積%以上、70體積%以下。 The metal base circuit substrate of claim 1, wherein the insulating layer is formed of an epoxy resin, a hardener, and an inorganic filler, and the inorganic filler contains 40% by volume or more and 70% by volume with respect to the total volume of the insulating layer. the following. 如申請專利範圍第2項之金屬基底電路基板,其中硬化劑含有具備羥基及胺基之一方或雙方的物質。 The metal base circuit substrate of claim 2, wherein the hardener contains one or both of a hydroxyl group and an amine group. 如申請專利範圍第1項之金屬基底電路基板,其中白色膜含有二氧化鈦作為白色顏料,二氧化鈦係金紅石型且表面由氫氧化鋁或二氧化矽所被覆。 The metal base circuit substrate of claim 1, wherein the white film contains titanium dioxide as a white pigment, the titanium dioxide is rutile type, and the surface is covered with aluminum hydroxide or cerium oxide.
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