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TWI441212B - 適用鎳電極之ｘ８ｒ介電組成物 - Google Patents

適用鎳電極之ｘ８ｒ介電組成物 Download PDF

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Publication number
TWI441212B
TWI441212B TW096146479A TW96146479A TWI441212B TW I441212 B TWI441212 B TW I441212B TW 096146479 A TW096146479 A TW 096146479A TW 96146479 A TW96146479 A TW 96146479A TW I441212 B TWI441212 B TW I441212B
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Taiwan
Prior art keywords
moles
dielectric
metal
capacitor
multilayer ceramic
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TW096146479A
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English (en)
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TW200837785A (en
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Gerhardus W Koebrugge
Knuth Albertsen
Willibrordus J L M J Coppens
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Ferro Corp
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Description

適用鎳電極之X8R介電組成物
本發明關於鈦酸鋇為主介電組成物，而且更特別是具有相當小比例之客離子(如鋯、錳、鉬、鎂、釔、矽、與額外鋇)分散於鈦酸鋇結晶基質內的鈦酸鋇為主介電組成物。此介電組成物可用於形成具有由鎳或鎳合金形成之內卑金屬電極的多層陶瓷片電容器。
多層陶瓷片電容器已廣泛地作為迷你、高電容及高可靠度電子組件。依照高性能電子設備之漸增要求，多層陶瓷片電容器亦已遭遇縮小、更高電容、降低成本、及更高可靠度之市場要求。
多層陶瓷片電容器通常藉由形成內電極形成漿料與介電層形成漿料之交錯層而製造。此層一般藉壓片、印刷或類似技術，繼而同時燃燒而形成。
通常內電極係由導體(如銀、金、鈀、鉑(即「貴重金屬」)、或以上之合金)形成。雖然貴重金屬昂貴，其可部份地使用相對不昂貴卑金屬(如鎳或銅或其合金)取代。在此使用之「卑金屬」為銀、金、鈀、與鉑以外之任何金屬。卑金屬內電極若在周圍空氣中燃燒則可被氧化，所以介電層與卑金屬內電極層必須在還原大氣中共燃。然而在還原大氣中燃燒造成介電層還原，其增加電阻率。其已提議使用非還原介電材料之多層陶瓷片電容器，然而此裝置一般具有較短之絕緣電阻(IR)壽命及較低之可靠度。
電子工業協會(EIA)對電容之溫度係數(TCC)指定已知為X8R特性之標準。X8R特性要求在溫度範圍-55℃至+150℃之電容變化相對25℃之參考溫度不大於±15%。X8R組件呈現每十年不大於2.5%之電容老化。
本發明提供一種可用於製造與含如鎳或鎳合金之卑金屬的內電極相容之陶瓷多層電容器的介電組成物。電容器可由本發明之介電組成物形成而在高加速壽命測試條件下以介電損失小且可靠度優良呈現安定之介電常數。
本發明之介電組成物包括一種平均直徑為約0.5至約1.5微米之均勻稠密微結構。均勻及稠密粒子微結構對於得到介電層較約10微米薄之高可靠度多層電容器為重要的。
在一個具體實施例中，本發明之介電組成物在燃燒前除了BaTiO3 亦包括鋯、鋇、錳、鉬、鎂、釔、與矽之氧化物或碳酸鹽的摻合物。本發明之另一個具體實施例中，為一種包括多層片之電子裝置，其包括在燃燒前含BaTiO3 、及鋯、鋇、錳、鉬、鎂、釔、與矽之氧化物或碳酸鹽的摻合物之介電層。
在另一個具體實施例中，本發明提供一種形成電子組件之方法，其包括對基板施加介電材料之顆粒，及將基板在足以燒結介電材料之溫度燃燒，其中介電材料在燃燒前包括表1成分之摻合物(重量百分比)。應了解，在此各數值(百分比、溫度等)之前以「約」推定。
熟悉此技藝者應了解，使用對應之碳酸鹽(例如BaCO3 、MgCO3 )或其他金屬鹽可發展等致調配物，只要介電組成物中金屬離子之最終比例為表1之調配物所得者。
另一個途徑為以BaTiO3 (即預燒結氧化物)、及鋇、錳、鉬、鎂、釔、與矽之氧化物或碳酸鹽、及鈣、鋯、鎦、鐿、鉬、與鎢之氧化物或碳酸鹽開始。
本發明之另一個具體實施例為一種製造具有X8R特性之多層陶瓷片電容器的方法，其包括：a.提供一種介電材料，其在燒結前包括以下之摻合物：i. BaTiO3 ，及按100莫耳份BaTiO3 計之以下：ii.約0.01至約2莫耳份ZrO2 ，iii.約1至約6莫耳份BaCO3 ，iv.約0.05至約0.5莫耳份MnCO3 ，v.約0.01至約0.4莫耳份MoO3 ，vi.約0.05至約2.5莫耳份MgO，vii.約0.5至約7莫耳份Y2 O3 ，及viii.約0.3至約4莫耳份SiO2 ，b.交錯地形成該介電材料與含過渡金屬之內電極材料層的堆疊層，及 c.在大氣中於足以燒結電極材料但不氧化，而且熔融介電材料之溫度燃燒堆疊。
本發明之另一個具體實施例為一種形成電子組件之方法，其包括：a.在基板上交錯地施加以下之層以形成堆疊：i.任何在此揭示之介電漿料，及ii.包括至少一種選自Ag、Au、Pd、Pt以外過渡金屬之金屬的含金屬電極漿料，b.在氧分壓不超過約10-8 大氣之大氣中，於足以燒結電極金屬且熔融介電材料之溫度燃燒堆疊。
本發明之另一個具體實施例為一種形成電子組件之方法，其包括：a.在基板上交錯地施加以下之層以形成堆疊：i.任何在此揭示之介電漿料，及ii.包括至少一種選自Pd、Pt與Pd-Ag合金之過渡金屬的含金屬電極漿料，b.在足以燒結電極金屬且熔融介電材料之溫度燃燒堆疊。
電容器滿足汽車及工業市場中各種應用及暴露於高溫之其他電子設備的要求。汽車「引擎」(under the hood)應用之漸增電子用途已對此產物範圍產生要求。
本發明之以上及其他特點在以下完整地敘述且在申請專利範圍中特別地指示，下述說明詳細地敘述本發明之特定描述性具體實施例，然而其係僅指示數種可使用本發明 精神之方式。
多層片電容器係藉由交錯地堆疊介電層與內電極以形成胚片而製造。在此預見二型內電極。第一型包括含鎳或鎳合金之卑金屬、或如銅之其他卑金屬。其較佳為鎳。將具有卑金屬電極之電子組件在低氧大氣中燃燒以防止卑金屬氧化。第二型內電極為貴重金屬電極，其可包括銀、金、鈀、與鉑之任一或全部。其一般對氧化之顧慮極小，所以包括貴重金屬之電子組件可在空氣中燃燒。形成介電層之介電組成物係藉由濕磨介電體之成分與有機媒液系統而製造。將介電組成物沉積在載體薄膜(如聚酯或聚丙烯)、帶(如不鏽鋼)、紙、或基板(如鋁氧或玻璃)上。然後將介電體薄片與電極交錯地堆疊形成胚片。介電組成物廣義地包括表1之氧化物。
在形成胚片後，其藉由在空氣大氣中加熱至低於約350℃之溫度而去除有機媒液。媒液去除用大氣並不重要。在卑金屬電極之情形，一旦去除媒液則將胚片在氧分壓為約10-12 至約10-8 atm之潮濕氮與氫還原大氣中，於約1200℃至約1350℃之溫度燃燒。貴重金屬電極片可在空氣中或 在大氣中燃燒而無特殊注意事項。對於去除黏合劑及燃燒片均可使用各種加熱外形。
多層陶瓷電容器之組態在此技藝為已知的。參考第1圖，其顯示多層陶瓷電容器1之例示結構。電容器1之外電極4係揭示於電容器1之側表面上且電連接內電極層3。電容器1具有多層交錯地堆疊之介電層2。電容器1之形狀並不重要，雖然其經常為長方形。又大小並不重要，而且片可依照特定應用具有合適之尺寸，其一般為1.0至5.6毫米×0.5至5.0毫米×0.5至1.9毫米之範圍。內電極層3係堆疊使得其在相反端以片1之相反側表面交錯地暴露。即一組內電極層3暴露於片1之一側表面，及另一組內電極層3暴露於片1之相反側表面。將一個外電極4電接觸一組內電極層3而施加於片1的一側表面，及將另一個外電極4電接觸另一組內電極層3而施加於片1的相反側表面。
介電層係由介電材料形成，其係藉由燒結BaTiO3 及包括鋯、錳、鉬、鎂、釔、矽、與額外鋇之氧化物或碳酸鹽(如表1)的摻合物而形成。其可使用燒結助劑，如SiO2 。上述氧化物於其氫氧化物或其他形式(如碳酸鹽、乙酸鹽、硝酸鹽、與有機金屬化合物(如金屬甲酸鹽、草酸鹽等))具有相同效果對熟悉此技藝者為顯而易知的，只要以所需量提供所需金屬離子。
其他化合物可存在於介電材料，其條件為其他化合物不負面地影響介電性質。此化合物通常在原料中如雜質而發現。
介電組成物在此具細結晶粒，其一般具有約0.5至約1.5微米之平均大小，較佳為粒度小於約0.7微米。
各介電層具有至多約20微米之厚度。較佳為各介電層之厚度為約4微米至約15微米。更佳為各介電層之厚度為約6微米至約12微米。在此可使用組成物製造具有薄介電層之多層陶瓷片電容器。在片電容器中堆疊之介電層數量通常為至多約800層，而且較佳為約3至約400層。
本發明之多層陶瓷片電容器通常藉由堆疊介電(陶瓷)薄片(其上藉網版印刷印製電極圖案)，或藉由交錯地網版印刷陶瓷與電極漿料形成胚堆疊，以形成如第1圖所示結構而製造。對於形成陶瓷層之兩種方法，其將粉末分散於溶劑，而且加入黏合劑產生處理用所需黏度及乾燥後所需機械強度。陶瓷薄片可例如藉刀塗形成，其中在乾燥後印製電極圖案。或者陶瓷薄片可藉由網版印刷胚堆疊形成，立即乾燥電極與介電漿料之交錯印刷而形成。胚片係以相鄰電極連接MLCC結構之相反端的方式分隔，如第1 圖。在燃燒後，將片於如鋁氧或矽石之介質中以滾筒乾燥而去角。其次將含例如銅之導電性漿料塗佈於兩端以將暴露之內電極連接在一起而製造端子，即外電極。然後將片在氮大氣中於約800℃終端燃燒，以在兩端將導體(例如銅)燒結成實心導體墊而形成多層電容器。端子為外電極4，如第1圖所示。
本發明之一個具體實施例包括一種多層陶瓷片電容器，其包括任何在此揭示之介電材料的交錯堆疊層、及包括Ag、Au、Pd、與Pt以外過渡金屬之內電極材料層的經燃燒組合。在此多層陶瓷片電容器中，介電層在燃燒後具有不大於約15微米之厚度，而且電容器呈現至少約2000之介電常數(K)及小於約2%之散逸因子(DF)，或者符合EIA X8R標準。
本發明之另一個具體實施例涉及一種多層陶瓷片電容器，其包括任何在此揭示之介電材料的交錯堆疊層、及包括選自Pd、Pt與Pd-Pt合金、及其組合之過渡金屬的內電極材料層之經燃燒組合。在此多層陶瓷片電容器中，介電層在燃燒後具有不大於約15微米之厚度，而且電容器具有大於約2000之介電常數(K)及小於約2%之散逸因子(DF)，或者符合EIA X8R標準。
另一個具體實施例為一種形成電子組件之方法，其包括：在基板上交錯地施加含氧化物介電材料層(其包括在此揭示之任何介電漿料組成物)、及含金屬電極漿料層(其包括至少一種選自Ag、Au、Pd、與Pt以外過渡金屬之金 屬)而形成堆疊，在氧分壓不超過約10-8 之大氣中，於足以燒結電極金屬且熔融介電材料之溫度燃燒堆疊。
另一個具體實施例為一種形成電子組件之方法，其包括：在基板上交錯地施加含氧化物介電材料層(其包括在此揭示之任何介電漿料組成物)、及含金屬電極漿料層(其包括至少一種選自Pd、Pt與Pd-Ag合金之金屬)而形成堆疊，在足以燒結電極金屬且熔融介電材料之溫度燃燒堆疊。
在此依序敘述電子組件之各主要組分。
介電漿料。 用於形成介電層之漿料可藉由混合有機媒液與介電原料而得，如在此所揭示。亦有用為在燃燒時轉化成此氧化物與複合氧化物之先質化合物，如上所述。介電材料係藉由選擇含此氧化物或此氧化物之先質的化合物，及以合適比例混合之而得。此化合物在介電原料中之比例係決定使得在燃燒後可得所需介電層組成物。介電原料通常以平均粒度為約0.1至約1.5微米，較佳為約1微米或更小，而且更佳為約0.5至約0.9微米之粉末形式使用。
有機媒液。 有機媒液為於有機溶劑中之黏合劑或於水中之黏合劑。在此使用之黏合劑之選擇並不重要；習知黏合劑，如乙基纖維素、聚乙烯丁醇、乙基纖維素、與羥丙基纖維素、及其組合，適合與溶劑一起。有機溶劑亦不重要且可依照特定之應用方法(即印刷或壓片)選自習知有機溶劑，如丁基卡必醇、丙酮、甲苯、乙醇、二乙二醇丁醚；2,2,4-三甲基戊二醇單異丁酸酯(Texanol®)；α-蓋烯醇；β-蓋烯醇；γ-蓋烯醇；三癸醇；二乙二醇乙醚 (Carbitol®)、二乙二醇丁醚(Butyl Carbitol®)、二乙二醇二丁醚(Dibutyl Carbitol®)、與丙二醇；及其摻合物。商標為Texanol®之產品係由Eastman Chemical Company,Kingsport,TN市售；商標為Dowanol®及Carbitol®之產品係由Dow Chemical Co.,Midland,MI市售。或者陶瓷漿液用媒液可為水。
在水為媒液時，黏合劑可選自聚乙烯醇(PVA)或聚乙酸乙烯酯(PVAc)組合水。應注意，PVA與PVAc通常不與含硼陶瓷介電粉末相容。包括含硼玻璃與PVA及/或PVAc之水性漿液趨於遭受嚴重之膠化。因此不含硼之陶瓷介電粉末(如本發明所揭示)對水系漿液處理特別重要。或者其可避免膠化，因為據信若在水環境中使用乳膠型黏合劑則不發生。
其對各漿料(介電或電極漿料)之有機媒液含量並無特殊限制。漿料經常含約1至5重量%之黏合劑及約10至50重量%之有機溶劑，其餘為金屬成分(電極用)或介電成分(介電層用)。如果需要，則各漿料可含至多10重量%之其他添加劑，如分散劑、塑性劑、介電化合物、及絕緣化合物。
內電極。 用於形成內電極層之漿料係藉由混合含卑金屬(如鎳或銅)或貴重金屬(如銀、金、鈀、或鉑)之導電性材料、與有機媒液而得。亦有用為各卑金屬或貴重金屬及其合金之組合。在此使用之導電性材料包括導體，如在此所述之導電性金屬與合金，及各種在燃燒時轉化成此 導體之化合物，例如氧化物、有機金屬化合物與松脂酸鹽。任何純的、市售可得的鎳漿料在此為適合的。合適之含銀貴重金屬漿料為EL45-006。其均可自Ferro Corporation of Cleveland,Ohio購得。
參考第1圖，形成內電極層3之導體並不重要，雖然較佳為使用卑金屬，因為介電層2之介電材料具有抗還原性質。典型卑金屬包括鎳及其合金。較佳之鎳合金含至少一種選自Mn、Cr、Co、與Cu之其他金屬。其較佳為含至少約95重量%之鎳的合金。應注意，鎳及鎳合金可含至多約0.1重量%之磷及其他殘量成分(即雜質)。其可控制內電極層之厚度以適合特定應用，但是此層一般為至多約5微米厚。較佳為內電極層具有約0.5至約3微米，而且更佳為約1.2至約1.5微米之厚度。貴重金屬內電極層3可選自Ag、Au、Pd、或Pt(或其組合)。在使用Pd-Ag合金時，其重量比例較佳為約99：1至約7：3。
外電極。 形成外電極4之導體並不重要，雖然其較佳為不昂貴金屬，如鎳、銅、及其一或兩者之合金，視情況地含Mn、Cr、Co、或Al。其可控制外電極層之厚度以適合特定應用，但是此層一般為至多約10微米至約50微米厚，較佳為約20至約40微米厚。用於形成外電極之漿料係藉如內電極用之相同方法製備。
胚片則可由介電層形成漿料及內電極層形成漿料製備。在印刷方法之情形，胚片係藉由將漿料以薄層形式交錯地印刷至聚酯薄膜(例如聚對酞酸伸乙酯(PET))基板 上，將薄層堆疊切成預定形狀，及將其自基板分離而製備。亦有用為一種壓片方法，其中胚片係藉由自介電層形成漿料形成胚薄片，將內電極層形成漿料印刷至各胚薄片上，及堆疊經印刷之胚薄片而製備。在自胚片去除有機媒液後將其燃燒。有機媒液可在習知條件下，在空氣大氣中藉由以0.01℃至20℃/小時，更佳為約0.03-0.1℃/小時之速率加熱，保持溫度為約150℃至約350℃，較佳為約200℃至約300℃，更佳為約250℃，及保持時間為約30-700分鐘，較佳為約200-300分鐘而去除。
燃燒。 然後將胚片在大氣中燃燒，其係依照內電極層形成漿料中之導體型式而決定。在內電極層係由卑金屬導體(如鎳與鎳合金)形成之處，燃燒大氣應具有低氧濃度，例如潮濕H2 /N2 大氣。此大氣可具有約10-12 至約10-8 大氣壓力之氧分壓。其應避免在低於約10-12 atm之分壓燃燒，因為導體在此低壓可能不正常地燒結且可能與介電層斷絕。在高於10-8 atm之氧分壓，內卑金屬電極層可能氧化。約10-11 至約10-9 atm之氧分壓對卑金屬電極最佳。
對於貴重金屬內電極，燃燒大氣較不重要(即有無氧)，因為貴重金屬較不易氧化，或者在特定情形對氧化為鈍性。
對於燃燒，其將溫度由室溫升至約1150℃至約1350℃，更佳為約1250℃至約1350℃之最高溫度。將溫度保持約2小時以增強稠化。較低之保持溫度提供不足之稠化，而較高之保持溫度可導致非常大之粒子。燃燒較佳為在還 原大氣中進行。例示燃燒大氣包括潮濕N2 、或N2 與H2 氣體之潮濕混合物。燒結上升速率為約50℃至約500℃/小時，較佳為約200℃至約300℃/小時；保持溫度為約1200℃至約1350℃，較佳為約1250℃至約1350℃，更佳為約1280℃至約1340℃。保持時間為約0.5至約8小時，較佳為約1至3小時，而且冷卻速率為約50℃至500℃/小時，較佳為約200℃至約300℃/小時。
有機媒液去除及燃燒可連續地或分別地進行。如果為連續地，則此方法包括有機媒液去除，改變大氣但不冷卻，加熱至燃燒溫度，將燃燒溫度保持指定時間，然後冷卻。如果為分別地，則在去除有機媒液及冷卻後將片之溫度升至燒結溫度，然後將大氣改成還原大氣。
所得片可例如在印刷或轉印外電極形成漿料及燃燒形成外電極之前(端子)，在端面藉滾筒打光及/或噴砂而拋光。外電極形成漿料之燃燒可在乾燥大氣(氧分壓為約10-6 atm)中，於約600℃至約800℃之溫度進行約10分鐘至約1小時。
如果必要，則藉電鍍或此技藝已知之其他方法在外電極上形成墊。本發明之多層陶瓷片電容器可藉例如焊接而安裝在印刷電路板上。
實施例。 以下實施例係提供以描述本發明之較佳態樣，而且不意圖限制本發明之範圍。
實施例1。 藉由混合及研磨BaTiO3 (BT)、及如表3所示之氧化物與碳酸鹽以提供客離子，而製備介電調配物。 因此在1公升聚乙烯瓶中稱重250克之BT、及按100莫耳BT計之所示莫耳量的客離子成分。在加入水與分散劑、Dispex® A-40(由Ciba Specialty Chemicals Maastricht B.V.,Maastricht,Netherlands市售)、及約1.8公斤之2毫米鋯氧(YTZ)球後，將粉末在水中研磨成D50 為0.5微米至0.7微米之間。然後將粉末在150℃乾燥，壓製碟片且提供鎳電極。將這些碟在潮濕H2 /N2 中於1280℃至1340℃間之溫度燒結，而且在潮濕N2 中於1000℃再氧化。測試碟之TCC行為，及由25℃電容值測定K值。結果示於表4。
得自這些實驗之重點為碟及MLCC在150℃之組成變動與TCC間趨勢。由於施加之電場，TCC按順時鐘方向(較負性)轉動，而在X8R規格之上限溫度(即150℃)造成MLCC之規格外TCC曲線。因此150℃之TCC對碟形電容器應夠高而使本發明介電組成物製造之MLCC符合X8R規格。然而MLCC是否符合規格不僅由碟片之充分高150℃之TCC值，亦由介電常數(K)值決定。已知具高K值之材料相較於低K值材料使MLCC展現較大之順時鐘方向轉動。
實施例2。 依照實施例1之步驟，使用表5左側之調配物製備介電調配物。將粉末在150℃乾燥且以碟形電容器測試。電測試結果亦示於表5(右3欄)。
實施例3。 依照實施例1之步驟，使用表5左側之調配物製備介電調配物。將粉末在150℃乾燥且以碟形電容器測試。電測試結果亦示於表5(右3欄)。
額外優點及修改對熟悉此技藝者為顯而易知的。因此本發明於廣義態樣不限於在此所示及所述之指定細節及描述例。因而可進行各種修改而不背離本發明一般概念之精神或範圍，如所附申請專利範圍及其等致物所界定。
1‧‧‧多層陶瓷電容器
2‧‧‧介電層
3‧‧‧內電極層
4‧‧‧外電極
第1圖為依照本發明之多層陶瓷片電容器的橫切面圖。
第2圖顯示得自表6之碟形電容器樣品C-4的TCC與溫度間關係。在此圖表內，最大之方格表示X8R規格。此方格中之垂直條為125℃。

Claims (19)

  1. 一種用於形成用於多層陶瓷片電容器之介電材料的粉末組成物，其在燒結前包括以下之摻合物：a. BaTiO3 ，及按每100莫耳份BaTiO3 計之以下：b.約0.01至約2莫耳份ZrO2 ，c.約1至約6莫耳份BaCO3 ，d.約0.05至約0.5莫耳份MnCO3 ，e.約0.01至約0.4莫耳份MoO3 ，f.約0.05至約2.5莫耳份MgO，g.約0.5至約7莫耳份Y2 O3 ，及h.約0.3至約4莫耳份SiO2 。
  2. 如申請專利範圍第1項之組成物，其包括以下之摻合物：a. BaTiO3 ，及按每100莫耳份BaTiO3 計之以下：b.約0.1至約1.75莫耳份ZrO2 ，c.約2.5至約4.5莫耳份BaCO3 ，d.約0.1至約0.4莫耳份MnCO3 ，e.約0.02至約0.3莫耳份MoO3 ，f.約0.5至約2莫耳份MgO，g.約1至約6莫耳份Y2 O3 ，h.約1至約3莫耳份SiO2 。
  3. 一種用於形成用於多層陶瓷片電容器之介電材料的粉末組成物，其包括以下之摻合物：a. BaTiO3 ，及按每100莫耳份BaTiO3 計之以下：b.約1.5至約6莫耳份BaCO3 ，c.約0.1至約0.5莫耳份MnCO3 ，d.約0.5至約2莫耳份MgO，e.約0.5至約2.5莫耳份Lu2 O3 f..約0.25至約3.5莫耳份Y2 O3 ，及g.約1至約4莫耳份SiO2 。
  4. 如申請專利範圍第3項之組成物，其進一步包括按每100莫耳份BaTiO3 計之選自以下之成分：a.約2至約4莫耳份CaCO3 ，b.約0.5至約3.5莫耳份ZrO2 ，c.約0.5至約2.5莫耳份Lu2 O3 ，d.約0.5至約2莫耳份Yb2 O3 ，e.約0.01至約0.5莫耳份MoO3 ，及f.約0.1至約0.5莫耳份WO3 ，及g.以上之組合。
  5. 如申請專利範圍第3項之組成物，其進一步包括約0.5至約3.5莫耳份ZrO2 。
  6. 如申請專利範圍第3項之組成物，其進一步包括約0.02至約0.3莫耳份MoO3 。
  7. 一種多層陶瓷片電容器，其包括以下之燃燒組合：i.如申請專利範圍第1項之介電材料的交錯堆疊層，及j.包括Ag、Au、Pd、或Pt以外過渡金屬之內電極材料層。
  8. 如申請專利範圍第7項之多層陶瓷片電容器，其中電容器具有大於約2000之介電常數及小於約2%之散逸因子，及其中電容器符合EIA X8R標準。
  9. 一種多層陶瓷片電容器，其包括以下之燃燒組合：a.申請專利範圍第1項之介電材料的交錯堆疊層，及b.包括選自Pd、Pt與Pd-Ag合金、及其組合之過渡金屬的內電極材料層。
  10. 如申請專利範圍第9項之多層陶瓷片電容器，其中電容器具有大於約2000之介電常數及小於約2%之散逸因子，及其 中電容器符合EIA X8R標準。
  11. 一種多層陶瓷片電容器，其包括以下之燃燒組合：a.如申請專利範圍第2項之介電材料的交錯堆疊層，及b.包括選自Pd、Pt或Pd-Ag合金之金屬的內電極材料層。
  12. 如申請專利範圍第11項之多層陶瓷片電容器，其中電容器具有大於約2000之介電常數及小於約2%之散逸因子，及其中電容器符合EIA X8R標準。
  13. 一種形成電子組件之方法，其包括：a.在基板上交錯地施加以下之層以形成堆疊：i.包括如申請專利範圍第1項之漿料的含氧化物介電材料，及ii.包括至少一種選自Ag、Au、Pd、Pt以外過渡金屬之金屬的含金屬電極漿料，b.在氧分壓不超過約10-8 大氣之大氣中，於足以燒結電極金屬且熔融介電材料之溫度燃燒堆疊。
  14. 一種形成電子組件之方法，其包括：a.在基板上交錯地施加以下之層以形成堆疊：i.包括申請專利範圍第1項之漿料的含氧化物介電材料，及ii.包括至少一種選自Pd、Pt與Pd-Ag合金之過渡金屬的含金屬電極漿料，b.在足以燒結電極金屬且熔融介電材料之溫度燃燒堆疊。
  15. 如申請專利範圍第14項之方法，其中電極漿料包括重量比例為約99：1至約7：3之Pd-Ag合金。
  16. 如申請專利範圍第14項之方法，其中燃燒係在氧分壓為約10-12 至約10-8 大氣壓力之大氣中進行。
  17. 一種製造具有X8R特性之多層陶瓷片電容器的方法，其包 括：a.提供一種包括以下之介電材料：i. BaTiO3 ，及按每100莫耳份BaTiO3 計之以下：ii.約0.01至約2莫耳份ZrO2 ，iii.約1至約6莫耳份BaCO3 ，iv.約0.05至約0.5莫耳份MnCO3 ，v.約0.01至約0.4莫耳份MoO3 ，vi.約0.05至約2.5莫耳份MgO，vii.約0.5至約7莫耳份Y2 O3 ，及viii.約0.3至約4莫耳份SiO2 ，b.交錯地形成該介電材料與含過渡金屬之內電極材料層的堆疊層，及c.在大氣中於足以燒結電極材料且熔融介電材料之溫度燃燒堆疊。
  18. 如申請專利範圍第17項之方法，其中內電極材料包括Ag、Au、Pd、Pt以外之過渡金屬，及其中大氣具有不超過約10-8 大氣壓力之氧分壓。
  19. 如申請專利範圍第17項之方法，其中內電極材料包括選自Pd、Pt與Pd-Ag合金、及其組合之過渡金屬。
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US7541306B2 (en) 2009-06-02
US20080169530A1 (en) 2008-07-17
US7727922B2 (en) 2010-06-01
US20090213527A1 (en) 2009-08-27

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