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TWI339889B - Phase change memory device and manufacturing method - Google Patents

Phase change memory device and manufacturing method

Info

Publication number
TWI339889B
TWI339889B TW096101347A TW96101347A TWI339889B TW I339889 B TWI339889 B TW I339889B TW 096101347 A TW096101347 A TW 096101347A TW 96101347 A TW96101347 A TW 96101347A TW I339889 B TWI339889 B TW I339889B
Authority
TW
Taiwan
Prior art keywords
manufacturing
memory device
phase change
change memory
phase
Prior art date
Application number
TW096101347A
Other languages
Chinese (zh)
Other versions
TW200735330A (en
Inventor
Hsiang Lan Lung
Shih Hung Chen
Original Assignee
Macronix Int Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Macronix Int Co Ltd filed Critical Macronix Int Co Ltd
Publication of TW200735330A publication Critical patent/TW200735330A/en
Application granted granted Critical
Publication of TWI339889B publication Critical patent/TWI339889B/en

Links

TW096101347A 2006-01-13 2007-01-12 Phase change memory device and manufacturing method TWI339889B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US75878406P 2006-01-13 2006-01-13

Publications (2)

Publication Number Publication Date
TW200735330A TW200735330A (en) 2007-09-16
TWI339889B true TWI339889B (en) 2011-04-01

Family

ID=38976533

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096101347A TWI339889B (en) 2006-01-13 2007-01-12 Phase change memory device and manufacturing method

Country Status (2)

Country Link
CN (1) CN101075630B (en)
TW (1) TWI339889B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102487120B (en) * 2010-12-03 2014-03-12 中芯国际集成电路制造(北京)有限公司 Formation method of phase change random access memory (PCRAM)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6456525B1 (en) * 2000-09-15 2002-09-24 Hewlett-Packard Company Short-tolerant resistive cross point array
CN1300839C (en) * 2004-08-06 2007-02-14 中国科学院上海微系统与信息技术研究所 Process for preparing nano electronic phase change storage

Also Published As

Publication number Publication date
CN101075630B (en) 2010-08-04
CN101075630A (en) 2007-11-21
TW200735330A (en) 2007-09-16

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees