1338363 (1) 九、發明說明 【發明所屬之技術領域〕 本發明大體上關於Μ 0 S型半導體影像感測器I C。詳言 之，本發明關於製造近接型半導體線性影像感測器丨C的方 法，其中像素與互相分離I C之劃線區的相對位置比區域感 測器近，適於讀取影像資訊以傳輸影像資訊的傳真機或影像 掃瞄器。1338363 (1) Description of the Invention [Technical Field of the Invention] The present invention generally relates to a S 0 S type semiconductor image sensor I C . In particular, the present invention relates to a method for fabricating a proximity type semiconductor linear image sensor 丨C, wherein a pixel is adjacent to a scribe line region of a separate IC from a region sensor, and is adapted to read image information for transmitting an image. Information fax machine or image scanner.
【先前技術】[Prior Art]
圖3是剖面圖，顯示傳統半導體影像感測器IC(半導體 裝置）的結構例》此例的半導體線性影像感測器1C利用光電 晶體結構做爲光電轉換（光接收）元件。參考圖3，對應於基 極部的P型井區3 02形成在對應於光電晶體集極部之N型 半導體基板3 01之表面附近的一部分。此外，對應於射極部 的N型擴散區303存在於P型井區302之表面附近的一部分 。偏壓到基極電位且形成於閘極絕緣膜3 04上的多晶矽電 極3 0 5存在於N型擴散區3 0 3周邊。在多晶矽電極3 0 5與 金屬線3 07間做爲絕緣膜的硼磷矽玻瑀（BPS G)膜3 0 6覆蓋 多晶矽電極3 0 5。光接收元件經由金屬線3 0 7電連接。最 後，形成表面保護的氮化矽膜3 0 8做爲鈍化膜。 此外，適於固定N型半導體基板3 01之電位的N型 擴散區3〗0形成於劃線區309的表面附近。由於BPSG膜 3 〇 6和氮化矽膜3 0 S都蝕刻並除去以降低切除I C之刀片 的磨損，故N型擴散區3】0的表面直接暴露於大氣。 -4 - (2) (2)1338363 一些傳統半導體影像感測器I C中，：N型擴散區3 ] 〇 不形成於劃線區3 09，但蝕刻劃線區3 09之Ν型半導體基 板3 0 1的表面而故意破壞晶性，以防止少數載子產生（參 考 JP2〇〇2-134727A(2 和 3 頁及圖 1))。 但在傳統半導體影像感測器IC結構的情形，應以晶 圓形式進行電性測試。製程完成後之晶圓形式的成品封入 比冰點低20°C以下之溫度的氮氣氛。成品在此條件下空 運。當封閉氣氛打開以進行測量晶圓電性的測試時，發生 存在於氮氣氛之極少量溼氣所造成之晶圓表面之少數載子 的無意產生，導致存在於半導體影像感測器IC上之多個 二極體或光電晶體之光電轉換（光接收）元件輸出間的分散 ，引發問題。 光電轉換元件輸出間的分散被相鄰半導體影像感測器 IC的結構圖形影響，產生某一類似固定輸出圖形。 此外，產生於晶圓形式的固定輸出圖形中，當1C彼 此分離成晶片時，上述固定輸出圖形消失。由於晶圓形式 與晶片形式間的光電轉換輸出差異不必然恆定，故使用簡 單轉換係數難以設定晶圓測試標準値。只可對】C晶片形 式進行準確測試。但線型半導體影像感測器ic尺寸在短 邊小至0 · 5 m m以下。此外，線型半導體影像感測器1 C直 接裝在感測器頭，因此封裝不存在。受限於探測準確性’ 在現有技術水準不能在1C晶片形式進行電性測§式^ 【發明內容〕 -5- (3) 1338363 鑒於此，本發明爲解決上述習知問題’因 的目標是提供製造半導體影像感測器1 C的方 因溼氣在晶圓表面上之少數載子的無意產生。 爲達成上述目標’依據本發明’在晶圓電 增加以有機矽化合物塗布鈍化膜表面（氮化矽f 線區表面（二者暴露於半導體影像感測器ic 氣）的製程。 大氣之溼氣的氫氧基影響存在於氮化矽膜 半導體基板表面附近的矽原子懸掛鍵，造成上 載子產生過量。所以，爲化學能量穩定而終結 鍵的化學反應可藉以抑制少數載子產生。本發 ，有機矽化合物的六甲基二矽胺（HMDS S i ( C Η 3) 3)用來與矽原子懸掛鍵反應。 圖2顯示96個光電轉換元件（橫軸）與各 件輸出電壓（縱軸）的關係，具有氫氧基 (CH3CH(CH3)〇H)滴落取代溼氣，在晶圓（其 9 6個光電轉換（光接收）元件之半導體線性影卷 並由本發明的製程所製造）上提供允許少數載 態。對異丙醇滴落前的初態和異丙醇滴落後的 出96個光接收元件的輸出電壓。圖中，時間 黒點、黒二角 '黑鑽石。實驗結果顯示，用於 程的HMDS抑制少數載子產生，因此光接收元 不受異丙醇或0H基影響。 另一方面’圖4顯示9 6個光電轉換元件 此，本發明 法，可避免 性測試前， 漠表面）和劃 之大氣的溼 表面附近或 述無意少數 矽原子懸掛 明的實例中 :(CH3)3Si- 光電轉換元 的異丙醇 上形成具有 矣感測器IC 子產生的狀 經歷時間畫 經歷依序爲 本發明之製 件輸出幾乎 (橫軸）與各 -6- (4) (4)1338363 光電轉換元件輸出電壓（縱軸）的關係，具有氫氧基的異丙 醇（(：143(：1^((：?13)〇}^)同樣滴落取代湟氣.，在晶圓（其上形 成具有9 6個光電轉換（光接收）元件之半導體線性影像感 測器1C並由傳統製程所製造）上提供允許少數載子產生 的狀態。對異丙醇滴落前的初態和異丙醇滴落後的經歷時 間畫出9 6個光接收元件的輸出電壓。實驗結果顯示異丙 醇（具有 0H基）之影響所造成的大量少數載子產生，因此 光接收元件輸出在異丙醇滴落前後大爲改變。 如上述，依據本發明，可防止溼氣影響所造成之晶圓 表面部上的無意少數載子產生，因此可解決在存在於晶圓 表面上之半導體影像感測器I C之多個光二極體或光電晶 體的光電轉換（光接收）元件輸出間產生分散的問題。於 是’晶圓形式與晶片形式間沒有光電轉換差異，因此可在 晶圓測試準確測量I C電性。 [實施方式】 下文參考附圖來詳述本發明的較佳實施例。Fig. 3 is a cross-sectional view showing a configuration example of a conventional semiconductor image sensor IC (semiconductor device). The semiconductor linear image sensor 1C of this example uses a photoelectric crystal structure as a photoelectric conversion (light receiving) element. Referring to Fig. 3, a P-type well region 302 corresponding to the base portion is formed in a portion near the surface of the N-type semiconductor substrate 301 corresponding to the photonic crystal collector portion. Further, an N-type diffusion region 303 corresponding to the emitter portion exists in a portion near the surface of the P-type well region 302. The polysilicon electrode 3 0 5 biased to the base potential and formed on the gate insulating film 304 is present in the periphery of the N-type diffusion region 300. A borophosphorus ruthenium (BPS G) film 306 which is an insulating film between the polysilicon electrode 350 and the metal wire 3 07 covers the polysilicon electrode 3 0 5 . The light receiving elements are electrically connected via a metal wire 307. Finally, a surface-protected tantalum nitride film 308 is formed as a passivation film. Further, an N-type diffusion region 3 "0" suitable for fixing the potential of the N-type semiconductor substrate 301 is formed in the vicinity of the surface of the scribe line region 309. Since both the BPSG film 3 〇 6 and the tantalum nitride film 30 S are etched and removed to reduce the wear of the blade for cutting the I C , the surface of the N-type diffusion region 3 0 is directly exposed to the atmosphere. -4 - (2) (2)1338363 In some conventional semiconductor image sensor ICs, the N-type diffusion region 3] is not formed in the scribe region 3 09, but the scribe region 3 09 is etched on the 半导体-type semiconductor substrate 3 The surface of 0 1 deliberately destroys crystallinity to prevent the generation of a small number of carriers (refer to JP 2 〇〇 2-134727 A (pages 2 and 3 and Figure 1)). However, in the case of the conventional semiconductor image sensor IC structure, the electrical test should be performed in a circular form. The finished product in the form of a wafer after the completion of the process is sealed with a nitrogen atmosphere at a temperature lower than 20 ° C below the freezing point. The finished product is shipped under these conditions. When the closed atmosphere is opened for the measurement of the electrical properties of the wafer, unintentional generation of a minority carrier on the surface of the wafer caused by a very small amount of moisture present in the nitrogen atmosphere occurs, resulting in the presence of the semiconductor image sensor IC. The dispersion between the outputs of the photoelectric conversion (light-receiving) elements of a plurality of diodes or photo-crystals causes problems. The dispersion between the outputs of the photoelectric conversion elements is influenced by the structural pattern of the adjacent semiconductor image sensor IC to produce a similar fixed output pattern. Further, in the fixed output pattern in the form of a wafer, when the 1C is separated into wafers, the fixed output pattern disappears. Since the difference in photoelectric conversion output between the wafer form and the wafer form is not necessarily constant, it is difficult to set the wafer test standard using a simple conversion coefficient. Accurate testing can only be performed on the C-Chip form. However, the size of the linear semiconductor image sensor is as small as 0·5 m m on the short side. In addition, the line type semiconductor image sensor 1 C is directly attached to the sensor head, so the package does not exist. Restricted to the detection accuracy' in the prior art level can not be electrically measured in the form of 1C wafers. § [Abstract] -5- (3) 1338363 In view of this, the present invention solves the above-mentioned conventional problems' The manufacture of the semiconductor image sensor 1 C provides unintentional generation of a minority of carriers on the wafer surface due to moisture. In order to achieve the above object 'in accordance with the present invention', the process of coating the surface of the passivation film with an organic germanium compound on the surface of the wafer (the surface of the tantalum nitride f-line region (both exposed to the semiconductor image sensor ic gas) is added to the wafer. The hydroxyl group affects the helium atom dangling bonds existing near the surface of the tantalum nitride film semiconductor substrate, causing an excessive amount of the carrier. Therefore, the chemical reaction for terminating the bond for chemical energy stabilization can suppress the generation of minority carriers. The organic hydrazine compound hexamethyldiamine (HMDS S i (C Η 3) 3) is used to react with the cesium atom dangling bond. Figure 2 shows the 96 photoelectric conversion elements (horizontal axis) and the output voltage of each piece (vertical axis) Relationship between having a hydroxyl group (CH3CH(CH3)〇H) dropping instead of moisture, on a wafer (a semiconductor linear shadow of its 96 photoelectric conversion (light-receiving) elements and manufactured by the process of the present invention) Provided on a small number of loading states. The output voltage of 96 light-receiving elements after the initial state of isopropyl alcohol dripping and the isopropyl alcohol droplets behind. In the figure, the time 黒, 黒 角 'black diamond. Experimental results Display, for program The HMDS inhibits minority carrier generation, so the light receiving element is not affected by isopropanol or 0H. On the other hand, 'Figure 4 shows 9 6 photoelectric conversion elements. This method of the present invention can avoid the surface test before the test. In the case of a wet surface near the atmosphere or an unintentional suspension of a few cesium atoms: (CH3)3Si- photoelectric conversion element formed on isopropanol with 矣 sensor IC sub-generation experienced time-lapse experience The output of the article of the present invention is almost (horizontal axis) in relation to the output voltage (vertical axis) of each of the -6-(4)(4)1338363 photoelectric conversion elements, and isopropanol having a hydroxyl group ((:143(:: 1^((:?13)〇}^) Also drops the helium. On the wafer (the semiconductor linear image sensor 1C having 9 photoelectric conversion (light receiving) elements is formed thereon and is processed by a conventional process The state in which a small number of carriers are allowed to be produced is provided. The output voltage of 96 light-receiving elements is plotted for the initial state before the isopropyl alcohol dripping and the elapsed time of the isopropyl alcohol drop. The experimental results show that isopropanol a large number of minority carriers caused by the influence of (with 0H basis), The output of the light-receiving element is greatly changed before and after the isopropyl alcohol dripping. As described above, according to the present invention, unintentional minority carrier generation on the surface portion of the wafer due to moisture influence can be prevented, so that the presence in the crystal can be solved. There is a problem of dispersion between the outputs of the photoelectric conversion (light-receiving) elements of the plurality of photodiodes or optoelectronic crystals of the semiconductor image sensor IC on the circular surface. Thus, there is no difference in photoelectric conversion between the wafer form and the wafer form, so The IC electrical properties are accurately measured in the wafer test. [Embodiment] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.
圖]A和1 B是剖面圖’顯示本發明實施例的半導體 β像感測器IC製程《圖1 A是剖面圖，顯示利用光電晶 體結構做爲光電轉換（光接收）元件的半導體線性影像感測 器I C製程。直到表面保護之鈍化膜布線前的製程與傳統 製程完全相同》參考圖1A，對應於基極部的p型井區】02 形成在對應於光電晶體集極部之N型半導體基板1 〇丨之表面 附近的一部分«對應於射極部的N型摟散區】〇 3存在於P (5) (5)1338363 型井區102之表面附近的一部分。偏壓到基極電位且形成 於閘極絕緣膜1 04上的多晶矽電極】〇5存在於N型擴散區 1 03周邊。在多晶矽電極1 〇5與金屬線]〇7間做爲絕緣膜 的B P S G膜1 〇 6覆蓋多晶矽電極]〇 5。光接收元件經由金 屬線】0 7電連接。最後，氮化矽膜]〇 8形成表面保護的鈍 化膜。此外，適於固定N型半導體基板]〇 ]之電位的N 型擴散區]】〇形成於劃線區1 〇 9的表面附近，以彼此分離 1C。N型擴散區Π0的表面中，BPSG膜106和氮化矽膜 ]〇 8都蝕刻並除去以降低切除I C之刀片的磨損。 具有圖1 A之結構的半導體線性影像感測器1 C形成 後，將氮氣引入置於25 土 5°C溫度之環境的HMDS化學 容器，產生含HMDS的氣體111，將含HMDS的氣體Π1 噴灑於製造半導體影像感測器1C且置於保持在】〇〇 ± 5 °C 溫度之加熱體上的晶圓表面上30至60秒（參考圖IB)。含 HMDS之氣體111噴灑30至60秒的原因是，若噴灑所需 的期間比3 0秒短，則含Η M D S之氣體的噴灑不足’若噴 灑所需的期間超過6 0秒’則晶圓表面吸收Η M D S過量。 當噴灑含HMDS之氣體的製程完成時’有機矽基（三 甲基矽基：（CH3)3Si-)與存在於氮化矽膜表面附近或半 導體基板表面附近的矽原子懸掛鍵化學反應，達成穩定狀 態。矽原子懸掛鍵數目以此方式大爲降低，因此可由大氣 之溼氣之氫氧基與矽原子懸掛鍵間的化學反應來抑制少數 載子產生。 將Η IV! D S吸收到晶圓表面不限於上述方法。大體上 (6) (6)1338363 ，利用光阻塗布機進行光阻塗布製程。因此Η M D S可使用 光阻塗布機塗在晶圓表面上。 【圖式簡單說明〕 圖1 A和]B是剖面圖，顯示本發明實施例的半導體 影像感測器I C製程； 圖2顯示經由本發明的製程所製之半導體線性影像感 測器I C光接收元件之輸出電壓的時間相依性，以經歷時 間爲參數的異丙醇滴落後相較於異丙醇滴落前； 圖3是剖面圖，顯示傳統半導體影像感測器1C的結 構例； 圖4顯示經由傳統製程所製之半導體線性影像感測器 1C光接收元件之輸出電壓的時間相依性，以經歷時間爲 參數的異丙醇滴落後相較於異丙醇滴落前。 【主要元件之符號說明】 1 〇 1 :半導體基板 ]02 :井區 1 〇 3 :擴散區 ]04 :閘極絕緣膜 1 0 5 .電極 ]06 :硼磷矽玻瑀膜 ]〇 7 :金屬線 1 08 :氮化矽膜 -9 - (7) (7)1338363 ]〇 9 :劃線區 1 ] 〇 :擴散區 ]1 ]:氣體 3 Ο 1 :半導體基板 3 0 2 :井區 3 〇 3 :擴散區 3 〇 4 :閘極絕緣膜 3 0 5 :電極 3 0 6 :硼磷矽玻璃膜 3 0 7 :金屬線 3 〇 8 :氮化矽膜 3 0 9 :劃線區 3 1 0 .擴散區FIGS. A and 1B are cross-sectional views showing a semiconductor β image sensor IC process according to an embodiment of the present invention. FIG. 1A is a cross-sectional view showing a semiconductor linear image using a photoelectric crystal structure as a photoelectric conversion (light receiving) element. Sensor IC process. The process before the surface protection passivation film wiring is completely the same as the conventional process. Referring to FIG. 1A, the p-type well region corresponding to the base portion is formed on the N-type semiconductor substrate 1 corresponding to the photonic crystal collector portion. A part of the vicinity of the surface «corresponding to the N-type dispersing region of the emitter portion" 〇3 exists in a portion near the surface of the P (5) (5) 1338363 type well region 102. A polycrystalline germanium electrode biased to the base potential and formed on the gate insulating film 104 is present in the periphery of the N-type diffusion region 103. The B P S G film 1 〇 6 is used as an insulating film between the polycrystalline germanium electrode 1 〇 5 and the metal wire 〇 7 to cover the polycrystalline germanium electrode 〇 5 . The light receiving elements are electrically connected via a metal wire. Finally, the tantalum nitride film 〇 8 forms a surface-protected passivation film. Further, an N-type diffusion region suitable for fixing the potential of the N-type semiconductor substrate] is formed near the surface of the scribe line 1 〇 9 to be separated from each other by 1C. In the surface of the N-type diffusion region Π0, both the BPSG film 106 and the tantalum nitride film 〇 8 are etched and removed to reduce the abrasion of the blade for cutting the I C . After the semiconductor linear image sensor 1 C having the structure of FIG. 1A is formed, nitrogen gas is introduced into the HMDS chemical container placed in an environment of 25 ° C and 5 ° C to generate a gas 111 containing HMDS, and the gas Π 1 containing HMDS is sprayed. The semiconductor image sensor 1C is fabricated and placed on the surface of the wafer held on a heating body at a temperature of 〇〇 ± 5 ° C for 30 to 60 seconds (refer to FIG. 1B). The reason why the HMDS-containing gas 111 is sprayed for 30 to 60 seconds is that if the period required for spraying is shorter than 30 seconds, the spraying of the gas containing ΗMDS is insufficient 'if the period required for spraying exceeds 60 seconds', the wafer surface Absorption Η MDS excess. When the process of spraying the gas containing HMDS is completed, the organic sulfhydryl group (trimethylsulfonyl group: (CH3)3Si-) is chemically reacted with a dangling atom dangling bond existing near the surface of the tantalum nitride film or near the surface of the semiconductor substrate. stable state. The number of helium atomic dangling bonds is greatly reduced in this way, so that a small number of carriers can be suppressed by a chemical reaction between the hydroxyl group of the atmospheric moisture and the helium atom dangling bond. The absorption of Η IV! D S to the wafer surface is not limited to the above method. In general (6) (6) 1338363, a photoresist coating process is performed using a photoresist coater. Therefore, Η M D S can be applied to the surface of the wafer using a photoresist coater. BRIEF DESCRIPTION OF THE DRAWINGS FIGS. 1A and 2B are cross-sectional views showing a semiconductor image sensor IC process according to an embodiment of the present invention; FIG. 2 is a view showing a semiconductor linear image sensor IC light receiving process manufactured by the process of the present invention. The time dependence of the output voltage of the component, the isopropanol droplets with the experiencing time as the parameter are compared with the isopropyl alcohol before the dropping; FIG. 3 is a cross-sectional view showing the structural example of the conventional semiconductor image sensor 1C; The time dependence of the output voltage of the light-receiving element of the semiconductor linear image sensor 1C manufactured by the conventional process is shown, with the time-dependent isopropyl alcohol drop being compared to before the isopropyl alcohol dripping. [Symbol description of main components] 1 〇1 : Semiconductor substrate] 02 : Well area 1 〇 3 : Diffusion area ] 04 : Gate insulating film 1 0 5 . Electrode] 06 : Boron phosphate film] 〇 7 : Metal Line 1 08: tantalum nitride film - 9 - (7) (7) 1338363] 〇 9 : scribe line 1 ] 〇: diffusion region] 1]: gas 3 Ο 1 : semiconductor substrate 3 0 2 : well region 3 〇 3: diffusion region 3 〇 4 : gate insulating film 3 0 5 : electrode 3 0 6 : borophosphonium silicate glass film 3 0 7 : metal line 3 〇 8 : tantalum nitride film 3 0 9 : scribe line 3 1 0 Diffusion zone