1334208 CN-9509005 22161twf.doc/n 九、發明說明： 【發明所屬之技術領域】 本發明是有關於一種凸塊結構及其製造方法，且特別 是有關於一種具有環狀支撐物的凸塊結構及其製造方法。 【先前技術】 覆晶接合技術（flip chip interconnect technology )乃是 一種將晶片（die)連接至一線路板的封裝技術，其主要是 在晶片之多個接墊上形成多個凸塊（bump )。接著將晶片 翻轉（flip) ’並利用這些凸塊來將晶片的這些接墊連接至 線路板上的接合墊（terminal)’以使得晶片可經由這些凸 塊而電性連接至線路板上。通常，凸塊具有若干種類型， 例如焊料凸塊、金凸塊、銅凸塊、導電高分子凸塊、高分 子凸塊等。 圖1A為習知的金凸塊的剖面圖，而圖1]8為習知的金 凸塊的俯視圖。請參考圖1A與圖1B，習知的金凸塊結構 適於配置在一晶片110上，而此晶片11〇上已形成有多個 鋁接墊120 (圖1A與圖1B僅繪示一個鋁接墊）與一保護 層130。其中，保護層13〇具有多個開口 13加，其分別暴 露各鋁接墊120的一部份。此外，習知的金凸塊結構包括 一球底金屬層140與一金凸塊15〇，其中球底金屬層14〇 配置開口 130a内，並覆蓋部分保護層13〇。金凸塊15〇配 置於球底金屬層140上》由於此金凸塊15〇覆蓋於 護層130上方的球底金屬層14〇上，因此金凸塊丨'5〇具有' CN-9509005 22161twf.doc/n 的直徑。 在本發明之一實施例中，凸塊的直徑自底面往頂面逐 漸增加。 在本發明之一實施例中，環狀支撐物的直徑小於等於 凸塊的頂面的直徑。 在本發明之一實施例中，環狀支撐物的直徑自凸塊的 頂面往底面逐漸減小。 在本發明之一實施例中，凸塊包括金凸塊。 本發明提出一種具有環狀支撐物的凸塊結構的製造 方法’其包括下列步驟。首先，提供一基板，基板具有多 個接墊與一保護層，其中保護層具有多個第一開口，且各 第一開口暴露出接墊之一部分。接下來，在保護層上形成 一球底金屬材料層，以覆蓋保護層與保護層所暴露出之接 塾。之後，在球底金屬材料層形成一圖案化光阻層，其中 圖案化光阻層具有多個第二開口，分別暴露出接墊上方之 球底金屬材料層，且位於圖案化光阻層的底面的各開口的 直橙小於位於圖案化光阻層的頂面的各開口的直徑。再 來，在第二開口内形成多個凸塊。然後，移除部分圖案化 光阻層，以在各凸塊的周圍形成一環狀支撐物。接著，以 環狀支撐物與凸塊為遮罩，圖案化球底金屬材料層，以形 成多個球底金屬層。 在本發明之一實施例中，形成圖案化光阻層的方法包 括使用-光罩’贿得各開口的趋自圖案化光 面往頂面逐漸增加。 增· 1334208 CN-9509005 22161 twf.d〇c/n 在本發明之一實施例中，光罩包括— 在本判之—實施射，形成圖案化光阻層^法 括使用-半調式光罩，以使各第二開口具有—頭部與 =_員，°卩連，頭部與球底金屬材料層，其中頭部的直經大 、在本發明之一實施射，移除部分圖案化光阻層的方 法包括以凸塊為遮罩進行一乾蝕刻製程。1334208 CN-9509005 22161twf.doc/n IX. Description of the Invention: [Technical Field] The present invention relates to a bump structure and a method of fabricating the same, and more particularly to a bump structure having an annular support And its manufacturing method. [Prior Art] Flip chip interconnect technology is a packaging technology for connecting a die to a wiring board, which mainly forms a plurality of bumps on a plurality of pads of the wafer. The wafers are then flipped' and the bumps are used to connect the pads of the wafer to the terminals on the board so that the wafers can be electrically connected to the board via the bumps. Generally, there are several types of bumps, such as solder bumps, gold bumps, copper bumps, conductive polymer bumps, high molecular bumps, and the like. 1A is a cross-sectional view of a conventional gold bump, and FIG. 1] is a top view of a conventional gold bump. Referring to FIG. 1A and FIG. 1B, the conventional gold bump structure is suitable for being disposed on a wafer 110. The wafer 11 has a plurality of aluminum pads 120 formed thereon (FIG. 1A and FIG. 1B only show one aluminum). Pad) and a protective layer 130. The protective layer 13A has a plurality of openings 13 for respectively exposing a portion of each of the aluminum pads 120. In addition, the conventional gold bump structure includes a ball bottom metal layer 140 and a gold bump 15〇, wherein the ball bottom metal layer 14 is disposed in the opening 130a and covers a portion of the protective layer 13A. The gold bump 15〇 is disposed on the ball bottom metal layer 140. Since the gold bump 15〇 covers the ball bottom metal layer 14〇 above the cover layer 130, the gold bump 丨 '5〇 has ' CN-9509005 22161twf The diameter of the .doc/n. In one embodiment of the invention, the diameter of the bump gradually increases from the bottom surface to the top surface. In one embodiment of the invention, the diameter of the annular support is less than or equal to the diameter of the top surface of the bump. In one embodiment of the invention, the diameter of the annular support gradually decreases from the top surface of the bump to the bottom surface. In an embodiment of the invention, the bumps comprise gold bumps. The present invention proposes a method of manufacturing a bump structure having an annular support, which comprises the following steps. First, a substrate is provided having a plurality of pads and a protective layer, wherein the protective layer has a plurality of first openings, and each of the first openings exposes a portion of the pads. Next, a layer of a spherical metal material is formed on the protective layer to cover the exposed portions of the protective layer and the protective layer. Thereafter, a patterned photoresist layer is formed on the bottom metal material layer, wherein the patterned photoresist layer has a plurality of second openings respectively exposing the ball-bottom metal material layer above the pads and located on the patterned photoresist layer The straight orange of each opening of the bottom surface is smaller than the diameter of each opening of the top surface of the patterned photoresist layer. Further, a plurality of bumps are formed in the second opening. Then, a portion of the patterned photoresist layer is removed to form an annular support around each bump. Next, the annular metal material layer is patterned by masking the annular support and the bumps to form a plurality of ball-bottom metal layers. In one embodiment of the invention, the method of forming the patterned photoresist layer includes the use of a mask to slab the progressively patterned surface of the openings to gradually increase toward the top surface.增·1334208 CN-9509005 22161 twf.d〇c/n In one embodiment of the invention, the reticle includes - in the present invention - the formation of a patterned photoresist layer, the use of a half-tone mask So that each of the second openings has a head and a _ member, a splicing, a head and a bottom metal material layer, wherein the straightness of the head is large, and one of the inventions is implemented, and the partial pattern is removed. The method of the photoresist layer includes a dry etching process using the bump as a mask.
程在本發明之一實施例t，乾蝕刻製程包括電漿蝕刻製 、在本發明之一實施例中，移除部分圖案化光阻層的方 法包括以下步驟。首先，以凸塊為遮罩，對於圖案化光阻 層進行一曝光製程。接下來，對於曝光後的圖案化光阻層， 進行一顯影製程，以移除部分圖案化光阻層。 日In one embodiment of the present invention, the dry etching process includes plasma etching. In one embodiment of the invention, the method of removing a portion of the patterned photoresist layer includes the following steps. First, a bump is used as a mask to perform an exposure process on the patterned photoresist layer. Next, for the exposed patterned photoresist layer, a developing process is performed to remove a portion of the patterned photoresist layer. day
基於上述，由於本發明之凸塊結構具有一環狀支撐 物，因此此種具有環狀支撑物的凸塊結構較不易產生底切 效應。此外’本發明將凸塊形成於保護層的開口内，因此 此種凸塊結構具有平坦的頂面。 為讓本發明之上述特徵和優點能更明顯易懂，下文特 舉較佳實施例，並配合所附圖式，作詳細說明如下。 【實施方式】 【第一實施例】 圖2A至圖2D為本發明之第一實施例之一種具有環狀 支撑物的凸塊結構的製造方法的示意圖。請先參考圖2a， 8 1334208 CN-9509005 22161twf.doc/n 本實施例之具有環狀支撐物的凸塊結構的製造方法包括下 列步驟。首先，提供一基板210，基板210具有多個接墊 220與一保護層230，其中保護層230具有多個第一開口 230a，且各第一開口 230a暴露出接墊220之一部分。值得 注意的是’為了便於說明，本實施例的第一開口 230a與接 墊220均僅繪示一個。此外，此基板210可以是晶圓或是 其他承載器，而接墊220的材質可以是鋁、銅或是其他金 屬。 請繼續參考圖2A，在保護層230上形成一球底金屬材 料層310 ’以覆蓋保護層23〇與保護層23〇所暴露出之接 塾220。此外，形成球底金屬材料層310的方法可以是濺 鍛製程、物理氣相沈積製程或是化學氣相沈積製程。 之後，在球底金屬材料層31〇上形成一圖案化光阻層 320,其中圖案化光阻層32〇具有多個第二開口 322，分別 暴路出接墊220上方之球底金屬材料層31〇，且位於圖案 化光阻層320的底面的各第二開口 322的直徑小於位於圖 案化光阻層320的頂面的各第二開口 322的直徑。此外， =成圖案化光阻層32G的方法包括使用一光罩（圖未示）。 j來Ί述光罩例如為—半調式光罩並使用半調式 一使各第一開口 322具有一頭部322a與一頸部322b， =部现連接頭部322a與球底金屬材料層3i〇，且頭 j 322a的直徑大於頸部咖的直徑。此外，頸部姗 lilt於第—開σ 23Ga的直徑，以改善城牆效應。 »月 > 圖2B ’在第二開口切内形成多個凸塊别。 9 1334208 CN-9509005 22161twf.doc/n 換言之’在保護層230所暴露出之接墊220上方之球底金 屬材料層310上形成凸塊330 ’而凸塊330的底面的直徑 小於凸塊330的頂面的直徑。在本實施例中，各凸塊mo 包括一頭部332與一頸部334,其中頸部334連接頭部332 與球底金屬材料層310。此外，頭部332的直徑大於頸部 334的直徑，且頸部334的直徑小於第一開口 23如的直 徑。此外，頭部332的頂面為平面。另外，形成凸塊33〇Based on the above, since the bump structure of the present invention has an annular support, such a bump structure having an annular support is less likely to cause an undercut effect. Further, the present invention forms the bumps in the openings of the protective layer, and thus the bump structure has a flat top surface. The above described features and advantages of the present invention will become more apparent from the following description. [Embodiment] FIG. 2A to FIG. 2D are schematic views showing a method of manufacturing a bump structure having an annular support according to a first embodiment of the present invention. Please refer to FIG. 2a, 8 1334208 CN-9509005 22161twf.doc/n The manufacturing method of the bump structure having the annular support of the present embodiment includes the following steps. First, a substrate 210 is provided. The substrate 210 has a plurality of pads 220 and a protective layer 230. The protective layer 230 has a plurality of first openings 230a, and each of the first openings 230a exposes a portion of the pads 220. It is to be noted that, for convenience of explanation, only one of the first opening 230a and the pad 220 of the present embodiment is shown. In addition, the substrate 210 may be a wafer or other carrier, and the pad 220 may be made of aluminum, copper or other metals. Referring to FIG. 2A, a ball metal layer 310' is formed on the protective layer 230 to cover the interface 220 exposed by the protective layer 23 and the protective layer 23A. Further, the method of forming the ball-bottom metal material layer 310 may be a sputtering process, a physical vapor deposition process, or a chemical vapor deposition process. Thereafter, a patterned photoresist layer 320 is formed on the bottom metal material layer 31, wherein the patterned photoresist layer 32 has a plurality of second openings 322, respectively, which are blasted out of the ball-bottom metal material layer above the pad 220. 31〇, and the diameter of each of the second openings 322 located on the bottom surface of the patterned photoresist layer 320 is smaller than the diameter of each of the second openings 322 located on the top surface of the patterned photoresist layer 320. In addition, the method of patterning the photoresist layer 32G includes using a photomask (not shown). The reticle is, for example, a half-tone mask and uses a half-tone type such that each of the first openings 322 has a head portion 322a and a neck portion 322b, and the portion is now connected to the head portion 322a and the ball-bottom metal material layer 3i. And the diameter of the head j 322a is larger than the diameter of the neck coffee. In addition, the neck 姗 lilt is at the diameter of the first-open σ 23Ga to improve the wall effect. »Month > Figure 2B' forms a plurality of bumps in the second opening cut. 9 1334208 CN-9509005 22161twf.doc/n In other words, a bump 330 is formed on the bottom metal material layer 310 above the pad 220 exposed by the protective layer 230, and the diameter of the bottom surface of the bump 330 is smaller than that of the bump 330. The diameter of the top surface. In this embodiment, each of the bumps mo includes a head portion 332 and a neck portion 334, wherein the neck portion 334 connects the head portion 332 with the ball-bottom metal material layer 310. Further, the diameter of the head 332 is larger than the diameter of the neck 334, and the diameter of the neck 334 is smaller than the diameter of the first opening 23. Further, the top surface of the head 332 is a flat surface. In addition, the bumps 33 are formed
的方式可以是電鍍製程，而凸塊33〇例如為金凸塊、銅凸 塊。The method may be an electroplating process, and the bumps 33 are, for example, gold bumps or copper bumps.
請參考圖2C，移除部分圖案化光阻層32〇，以在各凸 塊330的周圍形成—環狀支撐物。依移除部分圖案化光阻 層320之方法的不同，可形成環狀支撐物32乜或環狀支撐 物324b。此外，移除部分圖案化光阻層32〇的方法可以是 = = 330為遮罩進行一乾餘刻製程，其中乾姓刻製程例 二電漿侧製程。若制電漿⑽燦程來移除部分圖案 =層?2〇 ’則可能形成較平整_狀支撐物324a，也 =。，％狀支撐物324a的直徑小於等於凸塊33〇頂面的 #可叫他方絲移除部分 的方、法飞二 +例來說，移除部分圖案化光阻層320 的方法可包括以下步驟。首 案化光阻層320進行—曝光劁 塊Q為遮罩，對圖 案化光阻層320進二 =下來’對曝光後的圖 層32〇。若使用再-a、隹5^ 以移除部分圖案化光阻 使用再-人細曝光製程細影製縣移除部分 1334208 CN-9509005 22161twf.doc/n 圖案化光阻層320，則可能形成凹陷的環狀支撐物324b， 亦即環狀支撐物324b的直徑自凸塊330的頂面往凸塊330 的底面逐漸減小。 請參考圖2D，以環狀支撐物324a (324b)與凸塊330 為遮罩，圖案化球底金屬材料層310，以形成多個球底金 屬層312。至此，大致完成本實施例之具有環狀支撐物的 凸塊結構的製造流程。此外，當基板210為晶圓時，在完 成上述製程之後，也可以對於基板210進行一切割製程， 以形成多個晶片結構（未繪示）。以下將就此具有環狀支 樓物的凸塊結構的細部結構進行說明。 請繼續參考圖2D，本實施例之具有環狀支撐物的凸 塊結構適於配置於一基板210上，基板21〇具有至少一接 墊220與一保護層230 ’其中保護層230具有一第一開口 230a，且第一開口 230a暴露出接墊220之一部分。此外， 基板210可以是晶片或晶圓。此具有環狀支撐物的凸塊結 構包括一球底金屬層312、一凸塊330以及一環狀支撐物 324a(324b)，其中球底金屬層312配置於保護層23〇上， 並覆蓋保護層230所暴露出之接墊220。 凸塊330配置於接墊220上方之球底金屬層312上， 且凸塊330的底面的直徑小於凸塊33〇的頂面的直徑。在 本實施例中’上述凸塊330包括一頭部332與一頸部334, 其中頸部334連接頭部332與球底金屬層，且頭部332 的直位大於頸部334的直徑。此外，頸部334的直徑可小 於第-開口 23Ga的直独防止城牆效應。另外，凸塊33〇 1334208 CN-9509005 22161twf.doc/n 的材質例如為金、銅。此外，環狀支撐物324a (324b)配 置於凸塊330的周圍，並與凸塊330接觸，且環狀支撐物 324a (324b)的材質為光阻材料。 由於本實施例的凸塊結構具有一環狀支撐物324a (324b)，以保護凸塊330的頸部334，因此此種具有環 狀支撐物的凸塊結構較不易產生底切效應。此外，凸塊330 的頸部334形成於第一開口 230a内，且頸部334的直徑小 於第一開口 230a的直徑，因此此種具有環狀支撐物的凸塊 結構具有平坦的頂面’以改善習知技術所具有的城牆效應。 【第二實施例】 在第二實施例與第一實施例中，相同或相似的元件標 號代表相同或相似的元件，且第二實施例與第一實施例大 致相同。以下將針對兩實施例不同之處詳加說明，相同之 處便不再贅述。 本實施例之具有環狀支撐物的凸塊結構與第一實施 例中具有環狀支撐物的凸塊結構之不同處在於，在本實施 例中’凸塊並不具有頭部和頸部，而是使凸塊的直徑自底 面往頂面逐漸增加。 圖3A至圖3D為本發明之第二實施例之一種具有環 狀支撐物的凸塊結構的製造方法的示意圖。請先參考圖 2A，本實施例之具有環狀支撐物的凸塊結構的製造方法包 括下列步驟。首先，提供一基板210。基板210已詳細揭 露於第一實施例中，在此不多做贅述。 12 1334208 CN-9509005 22161 twf.doc/n 請繼續參考圖3A’在保護層230上形成一球底金屬材 料層410，以覆蓋保護層23〇與保護層23〇所暴露出之接 墊220。此外，形成球底金屬材料層41〇的方法可以是濺 . 艘衣私或疋其他物理氣相沈積製程。 之後，在球底金屬材料層410形成一圖案化光阻層 420,其中圖案化光阻層42〇具有多個第二開口 422，分^ 暴露出接墊220上方之球底金屬材料層41〇，且位於圖案 φ 化光阻層320的底面的各第二開口 422的直徑小於位於圖 案化光阻層420的頂面的各第二開口 422的直徑。在本實 施例二’第二開口 422的直徑自底面往頂面逐漸增加，並 可使第二開口 422的底面的直徑小於第一開口 23〇a。此 外，形成圖案化光阻層420的方法可以是採用半調式光 罩二然而，形成圖案化光阻層42〇的方法並不限於上述使 用半調式光罩的方式，所屬技術領域中具有通常知識者亦 可用其他方式形成圖案化光阻層42〇，例如改變入射光的 焦點深度（depth of f0CUS)使圖案化光阻層42〇具有第二 • 開口 422。 請參考圖3B，在第二開口 422内形成多個凸塊43〇。 換言之，在保護層230所暴露出之接墊22〇上方之球底金 屬材料層410上形成凸塊430，而凸塊430的底面的直徑 小於凸塊430的頂面的直徑。在本實施例中，各凸塊43〇 . 的直杈自底面往頂面逐漸增加。凸塊430的底面的直徑小 於第一開口 230a的直徑，因此凸塊43〇的頂面為平面。另 外，形成凸塊430的方式可以是電鍍製程，而凸塊43〇例 13 1334208 CN-9509005 22161twf.doc/n 如為金凸塊、銅凸塊。 請參考圖3C，移除部分圖案化光阻層樣，以在各凸 塊430的周圍形成—環狀支擇物424a (42扑）。移除部分 目案化光阻層420的方法請參考第一實施例中移除部分圖 案化光阻層32〇的方法。簡單而言，若使用電漿餘刻製程 來移除部分圖案化光阻層42〇，則可能形成較平整的環狀 支撐物424a ’也就是說，環狀支撐物424a的直徑小於等 • 於凸塊430頂面的直徑。此外，若使用再次進行曝光製程 與顯影製程來移除部分圖案化光阻層420，則可能形成凹 陷的環狀支撐物424b，亦即環狀支撐物424b的直徑自凸 塊430的頂面往凸塊430的底面逐漸減小。 請參考圖3D ’以環狀支稽·物424a ( 424b )與凸塊430 為遮罩，圖案化球底金屬材料層41〇 ’以形成多個球底金 屬層412。至此，大致完成本實施例之具有環狀支撐物的 凸塊結構的製造流程。此外，若基板210為晶圓時，也可 以對於基板210進行一切割製程，以形成多個晶片結構（未 •繪示）。以下將就此具有環狀支撐物的凸塊結構與第一實 施例中具有環狀支撐物的凸塊結構之不同處加以說明。 請參考圖2D及圖3D，本實施例中具有環狀支撐物的 凸塊結構和第一實施例中具有環狀支撐物的凸塊結構之不 同處在於，本實施例中的凸塊430並不具有如凸塊330之 - 頭部332與頸部334。凸塊430的直徑為由凸塊430的底 . 面至凸塊430的頂面逐漸增加，而環狀支撐物424a(424b) 的内直徑亦是由環狀支撐物424a (424b)的底面至環狀支 1334208 CN-9509005 2216 ltwf.doc/n 撐物424a (424b)的頂面逐漸增加e 綜上所述，本發明至少具有以下優點： 1.本發明之凸塊結構具有一環狀支樓物，因此此種具 有環狀支禮物的凸塊結構較不易產生底切效應β 2_本發明將凸塊形成於保護層的開口内，因此此種具 有環狀支撐物的凸塊結構具有平坦的頂面。 —雖然本發明已以較佳實施例揭露如上，然其並非用以 限定本發明’任何所屬技術領域巾具有通常知識者 脫離本發明之精神和翻内，當可作些許之更動與 因此本發明之賴|請當視後社巾料利朗所界^ 為準。 |疋考 圖式簡單說明】 圖1Α為習知的金凸塊的剖面圖 圖1Β為習知的金凸塊的俯視圖 圖2Α至圖2D為本發明之第一實施例之 狀支撐物的凸塊結構的製造方法的示意圖。 〜有環 圖3Α至圖3D為本發明之第二實施例之 狀支撐物的凸塊結構的製造方法的示意圖。 ^有環 【主要元件符號說明】 110 :晶片 120 :鋁接墊 130 :保護層 1334208 -· CN-9509005 22161twf.doc/n 130a :開口 140 :球底金屬層 150 :金凸塊 150a:環狀凸起部 210 :基板 220 :接墊 230 :保護層 230a :第一開口 ® 310、410 :球底金屬材料層 312、412 :球底金屬層 320、420 :圖案化光阻層 322 :第二開口 322a :頭部 322b :頸部 330、430 :凸塊 332 :頭部 φ 334 :頸部 324a、324b、424a、424b :環狀支撐物 16Referring to FIG. 2C, a portion of the patterned photoresist layer 32 is removed to form an annular support around each of the bumps 330. Depending on the method of removing a portion of the patterned photoresist layer 320, an annular support 32A or an annular support 324b may be formed. In addition, the method of removing a portion of the patterned photoresist layer 32 may be a dry-to-after process for the mask, where the process is followed by a plasma side process. If the plasma (10) is removed to remove part of the pattern = layer? 2〇', a flatter _-shaped support 324a may be formed, also =. The diameter of the %-shaped support 324a is less than or equal to the square of the top surface of the bump 33. The square of the removed portion of the square wire may be called the square of the removed portion of the square wire. For example, the method of removing the partially patterned photoresist layer 320 may include the following. step. The first photoresist layer 320 performs an exposure Q block Q as a mask, and the patterned photoresist layer 320 is subjected to the second layer down to the exposed layer 32 〇. If re-a, 隹5^ is used to remove part of the patterned photoresist, use the re-human fine exposure process to remove the portion of the county 1334208 CN-9509005 22161twf.doc/n patterned photoresist layer 320, which may form The recessed annular support 324b, that is, the diameter of the annular support 324b, gradually decreases from the top surface of the bump 330 toward the bottom surface of the bump 330. Referring to FIG. 2D, the ball-bottom metal material layer 310 is patterned with the annular support 324a (324b) and the bumps 330 as a mask to form a plurality of ball-bottom metal layers 312. Thus far, the manufacturing process of the bump structure having the annular support of the present embodiment is substantially completed. In addition, when the substrate 210 is a wafer, after the process is completed, a cutting process may be performed on the substrate 210 to form a plurality of wafer structures (not shown). The detailed structure of the bump structure having the annular building will be described below. With reference to FIG. 2D, the bump structure having the annular support is disposed on a substrate 210. The substrate 21 has at least one pad 220 and a protective layer 230. The protective layer 230 has a first An opening 230a, and the first opening 230a exposes a portion of the pad 220. Further, the substrate 210 may be a wafer or a wafer. The bump structure having an annular support includes a ball bottom metal layer 312, a bump 330, and an annular support 324a (324b), wherein the ball bottom metal layer 312 is disposed on the protective layer 23〇 and is covered and protected. The pads 220 exposed by the layer 230. The bump 330 is disposed on the bottom metal layer 312 above the pad 220, and the diameter of the bottom surface of the bump 330 is smaller than the diameter of the top surface of the bump 33〇. In the present embodiment, the above-mentioned bump 330 includes a head portion 332 and a neck portion 334, wherein the neck portion 334 connects the head portion 332 with the ball bottom metal layer, and the straight portion of the head portion 332 is larger than the diameter of the neck portion 334. Further, the diameter of the neck portion 334 may be smaller than the straight wall of the first opening 23Ga to prevent the wall effect. Further, the material of the bump 33 〇 1334208 CN-9509005 22161 twf.doc/n is, for example, gold or copper. Further, the annular support 324a (324b) is disposed around the bump 330 and is in contact with the bump 330, and the material of the annular support 324a (324b) is a photoresist material. Since the bump structure of the present embodiment has an annular support 324a (324b) to protect the neck portion 334 of the bump 330, such a bump structure having a ring-shaped support is less likely to cause an undercut effect. In addition, the neck 334 of the bump 330 is formed in the first opening 230a, and the diameter of the neck 334 is smaller than the diameter of the first opening 230a, so the bump structure having the annular support has a flat top surface ' Improve the wall effect of conventional technology. [Second Embodiment] In the second embodiment and the first embodiment, the same or similar component numbers denote the same or similar elements, and the second embodiment is substantially the same as the first embodiment. The differences between the two embodiments will be described in detail below, and the same portions will not be described again. The bump structure having the annular support of the present embodiment is different from the bump structure having the annular support in the first embodiment in that, in the present embodiment, the bump does not have a head and a neck. Rather, the diameter of the bump gradually increases from the bottom surface to the top surface. 3A to 3D are schematic views showing a method of manufacturing a bump structure having a ring-shaped support according to a second embodiment of the present invention. Referring first to Fig. 2A, the method of manufacturing the bump structure having the annular support of the present embodiment includes the following steps. First, a substrate 210 is provided. The substrate 210 has been disclosed in detail in the first embodiment and will not be further described herein. 12 1334208 CN-9509005 22161 twf.doc/n Please continue to refer to FIG. 3A' to form a ball-bottom metal material layer 410 on the protective layer 230 to cover the pads 220 exposed by the protective layer 23 and the protective layer 23A. In addition, the method of forming the bottom metal material layer 41 can be a splash or a physical vapor deposition process. Thereafter, a patterned photoresist layer 420 is formed on the ball-bottom metal material layer 410, wherein the patterned photoresist layer 42 has a plurality of second openings 422, which expose the ball-bottom metal material layer 41 above the pads 220. The diameter of each of the second openings 422 located on the bottom surface of the patterned φ photoresist layer 320 is smaller than the diameter of each of the second openings 422 located on the top surface of the patterned photoresist layer 420. The diameter of the second opening 422 of the second embodiment is gradually increased from the bottom surface to the top surface, and the diameter of the bottom surface of the second opening 422 is made smaller than the first opening 23〇a. In addition, the method of forming the patterned photoresist layer 420 may be a half-tone mask. However, the method of forming the patterned photoresist layer 42 is not limited to the above-described manner of using a half-tone mask, and has a general knowledge in the art. The patterned photoresist layer 42 can also be formed by other means, such as changing the depth of focus of the incident light such that the patterned photoresist layer 42 has a second opening 422. Referring to FIG. 3B, a plurality of bumps 43A are formed in the second opening 422. In other words, the bump 430 is formed on the bottom metal material layer 410 above the pad 22 which is exposed by the protective layer 230, and the diameter of the bottom surface of the bump 430 is smaller than the diameter of the top surface of the bump 430. In this embodiment, the straight ridges of the respective bumps 43 逐渐 are gradually increased from the bottom surface toward the top surface. The diameter of the bottom surface of the bump 430 is smaller than the diameter of the first opening 230a, so that the top surface of the bump 43 is flat. In addition, the bump 430 may be formed by a plating process, and the bumps 43 〇 13 1334208 CN-9509005 22161 twf.doc/n are gold bumps and copper bumps. Referring to FIG. 3C, a portion of the patterned photoresist layer is removed to form a ring-shaped support 424a (42 bounce) around each of the bumps 430. For a method of removing a portion of the patterned photoresist layer 420, refer to the method of removing a portion of the patterned photoresist layer 32A in the first embodiment. Briefly, if a plasma remnant process is used to remove a portion of the patterned photoresist layer 42, a relatively flat annular support 424a may be formed. That is, the diameter of the annular support 424a is less than or equal to The diameter of the top surface of the bump 430. In addition, if the partial patterning photoresist layer 420 is removed by performing the exposure process and the development process again, a recessed annular support 424b may be formed, that is, the diameter of the annular support 424b is from the top surface of the bump 430. The bottom surface of the bump 430 gradually decreases. Referring to Fig. 3D', a ring-shaped metal material layer 41'' is patterned with a ring-shaped member 424a (424b) and a bump 430 as a mask to form a plurality of ball-bottom metal layers 412. Thus far, the manufacturing process of the bump structure having the annular support of the present embodiment is substantially completed. In addition, if the substrate 210 is a wafer, a cutting process may be performed on the substrate 210 to form a plurality of wafer structures (not shown). The difference between the bump structure having the annular support and the bump structure having the annular support in the first embodiment will be described below. Referring to FIG. 2D and FIG. 3D, the difference between the bump structure having the annular support in the embodiment and the bump structure having the annular support in the first embodiment is that the bump 430 in this embodiment is There is no such as the bump 330 - the head 332 and the neck 334. The diameter of the bump 430 is gradually increased from the bottom surface of the bump 430 to the top surface of the bump 430, and the inner diameter of the annular support 424a (424b) is also from the bottom surface of the annular support 424a (424b) to Annular branch 1334208 CN-9509005 2216 ltwf.doc/n The top surface of the 424a (424b) is gradually increased by e. In summary, the present invention has at least the following advantages: 1. The bump structure of the present invention has a ring branch Such a structure, such a bump structure having an annular support is less likely to produce an undercut effect β 2 - the present invention forms a bump in the opening of the protective layer, and thus the bump structure having the annular support has Flat top surface. The present invention has been described above by way of a preferred embodiment, and is not intended to limit the invention. Any of the technical fields of the invention may be devised without departing from the spirit and scope of the invention. The Lai | Please look at the back of the community towel Lilang boundary ^ shall prevail. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1A is a cross-sectional view of a conventional gold bump. FIG. 1 is a plan view of a conventional gold bump. FIG. 2A to FIG. 2D are convex views of a support of the first embodiment of the present invention. Schematic diagram of a method of manufacturing a block structure. - Ringed Fig. 3A to Fig. 3D are schematic views showing a method of manufacturing the bump structure of the support of the second embodiment of the present invention. ^有环 [Main Component Symbol Description] 110: Wafer 120: Aluminum Pad 130: Protective Layer 1334208 - CN-9509005 22161twf.doc/n 130a: Opening 140: Ball Metal Layer 150: Gold Bump 150a: Ring Projection portion 210: substrate 220: pad 230: protective layer 230a: first opening® 310, 410: ball-bottom metal material layer 312, 412: ball-bottom metal layer 320, 420: patterned photoresist layer 322: second Opening 322a: head 322b: neck 330, 430: bump 332: head φ 334: neck 324a, 324b, 424a, 424b: annular support 16