1331595 九、發明說明： 【發明所屬之技術領域】 ，特別是關於-種用於微 本發明係與微機電模組有關 機電挺組基板形成通道之方法。 【先前技術】 為了提高微機電模組的性能，微機電元件在 必須考量到機械支持以及環境因素(例如： 、時， 題。其中’有些微機電元件之構造較為特殊雜::擾)： 風，其接收外界訊號必須由其下方接收，所以在基板上必 須要形成有一彎曲之感測通道且連通該微機電晶片下方必 藉以達到上述目的。 然而，若是要直接於基板作出彎曲的感測通道，將會 f技術上的'困難。故習用結構之感測通道係以多數板體堆 疊而成；以現有技術而言，一片板體的厚度至少在〇18mm 15以上，由於該基板的構成至少要兩片板體進行疊合，該基 板的堆疊高度至少會在〇.36mm以上，此種結構將使得該基 板高度提高，衍生增加微機電模組的整體體積的問題。另 外’習用以疊合板體的方式來製作該基板，容易產生板體 剝離的情形，將會影響該基板的結構強度。 20 綜上所陳，習知用於微機電模組基板形成通道之方法 具有上述缺失而有待改進。 【發明内容】 本發明之主要目的在於提供一種用於微機電模組基板 4 Ϊ331595 形成：道之方法’具有降低基板整體高度之特色。 ”、、、成上述目的，本發明所提 =刻(etChmg)而形成一第一空間；其令該基板的厚度在 一第二㈣以及層^)_基板頂部進㈣刻而形成1331595 IX. Description of the invention: [Technical field to which the invention pertains], in particular, a method for forming a channel for an electromechanical stacking substrate relating to a micro-electromechanical module. [Prior Art] In order to improve the performance of MEMS modules, MEMS components must be considered for mechanical support as well as environmental factors (for example: , , , , , , , , , , , , , , , , , , , , , , , , , , The receiving external signal must be received from below, so a curved sensing channel must be formed on the substrate and connected to the underside of the MEMS wafer to achieve the above purpose. However, if it is to make a curved sensing channel directly on the substrate, it will be technically difficult. Therefore, the sensing channel of the conventional structure is formed by stacking a plurality of plates; in the prior art, the thickness of one plate body is at least 〇18 mm 15 or more, and since the structure of the substrate requires at least two plates to be stacked, the The stack height of the substrate will be at least 〇.36mm or more. Such a structure will increase the height of the substrate and cause a problem of increasing the overall volume of the MEMS module. In addition, the substrate is fabricated by laminating a plate body, which tends to cause peeling of the plate body, which will affect the structural strength of the substrate. 20 In summary, the conventional method for forming a channel for a MEMS module substrate has the above-mentioned deficiencies and needs to be improved. SUMMARY OF THE INVENTION A primary object of the present invention is to provide a method for forming a MEMS module substrate 4 331 595 to have a feature of reducing the overall height of the substrate. For the above purpose, the present invention provides a first space by forming an etChmg; the thickness of the substrate is formed by a fourth (four) and a layer of the substrate.
m以M + #、有n形狀且位於該第二空間之犧牲 …）射λ歧填滿該第二空間㈣成 以侧除去該鎌部，該第—支料錢該第Λν層即 形成有一兩端連通外界之通道。 錯此，本發明之帛於微機電歡聽形錢道之方法 運用，刻(etChing)與射出成型(injection mokling)方式’採用 對單一主體進行加工的方式取代堆疊式基板結構(stack 阳bstrate structure);本發明之技術精神在於以蝕刻方式逐漸 I5形成預定路徑，再使用射出成型方式逐漸形❹數支撐 層’以達卿成料道之目的；同時，其相較於f用者， 具有降低基板整體高度之特色。 【實施方式】 為了詳細說明本發明之結構、特徵及功效所在，茲舉 以下較佳實施例並配合圖式說明如後，其中： 第一圖為本發明第一較佳實施例之加工示意圖，主要 揭示基板於加工前之剖視圖。 第二圖為本發明第一較佳實施例之加工示意圖，主要 1331595 揭示第一空間的位置。 第三圖為本發明第一較佳實施例之加工示意圖，主要 揭示第一支撐層的位置。 第四圖為本發明第一較佳實施例之加工示意圖，主要 5 揭示第二空間以及犧牲部的位置。 第五圖為本發明第一較佳實施例之加工示意圖，主要 揭示第二支撐層的位置。 第六圖為本發明第一較佳實施例之加工示意圖，主要 揭示通道的形成過程。 10 第七圖為本發明第一較佳實施例之加工示意圖，主要 揭示通道的結構。 第八圖為本發明第一較佳實施例之應用於一微機電模 組之實施態樣。 第九圖為本發明第二較佳實施例之加工示意圖，主要 15 揭示基板於加工前之剖視圖。 第十圖為本發明第二較佳實施例之加工示意圖，主要 揭示第一空間的位置。 第十一圖為本發明第二較佳實施例之加工示意圖，主 要揭示第二空間以及犧牲部的位置。 20 第十二圖為本發明第二較佳實施例之加工示意圖，主 要揭示第一支撐層的位置。 第十三圖為本發明第二較佳實施例之加工示意圖，主 要揭示第二支撐層的位置。 第十四圖為本發明第二較佳實施例之加工示意圖，主 6 要揭示通道的形成過程β 第十五圖為本發明第二較佳實施例之加工示 要揭示通道的結構。 第十六圖為本發明第三較佳實施例之加工示 要揭示基板於加工前之剖視圖。 意圖 意圖 主 主 主 第十七圖為本發明第三較佳實施例之加工示意圖 要揭示第一空間的位置。 第=八圖為本發明第三較佳實施例之加工示意圖，主 要揭示第二空間以及犧牲部的位置。 第十九圖為本發明第三較佳實施例之加工示意圖，主 要揭示第一支撐層的位置。 第二十圖為本發明第三較佳實施例之加工示意圖，主 要揭示第二支撐層的位置。 第二十一圖為本發明第三較佳實施例之加工示意圖， 主要揭示通道的形成過程。 一 主要揭示通道二結才t發月弟—較佳貝鉍例之加工不意圖， 於一微機 第二十三圖為本發明第三較佳實施例之應用 電模組之實施態樣。 請參閱第一圖至第七圖，其係為本發明第一較佳實 例所提供之用於微機電模組基板形成通道之方法，:A也 列各步驟： 下 環氧樹 挨群中 a)首先，提供一基板(10)係選自以玻璃纖維、 脂、聚亞醯胺樹脂、FR4樹脂以及BT樹脂所構成之 1331595 所選出的一種材料所製成者；該基板(1〇)的厚度在〇3〇mm 以下’該基板(1〇)的最佳厚度為〇25mm ;本實施例中，該 基板(10)的厚度以〇.25mm為例(如第一圖所示）；對該基板 (1〇)底部進行钱刻（etching)而形成一第一空間（12)(如第二 5圖所示）； b) 以射出成型（injection molding)將熱固性樹脂填滿該 第一空間（12)而形成一第一支撐層（20)(如第三圖所示）；其 中，該第一支撐層（20)之抗蝕係數係大於該基板(1〇); c) 對該基板(10)頂部進行蝕刻而形成多數第二空間（14) 10以及一具有通道形狀且位於該第二空間（14)之犧牲部 (16)(如第四圖所示）； d) 以射出成型將熱固性樹脂填滿各該第二空間（14)而 形成多數第二支撐層(22)(如第五圖所示）；本實施例中，該 第二支撐層（22)底部係與該第一支撐層（20)頂部相互鄰接 15而形成一體，在結構上較不容易辨識兩者的分界；其中， 該第二支撐層（22)之抗蝕係數係大於該基板(10); e) 以蝕刻逐步除去該犧牲部（16)(如第六圖所示）；由於 該第一支撐層P〇)以及該第二支撐層（22)之抗蝕係數係大 於該基板(10)，所以在除去該基板(10)之犧牲部（16)的蝕刻 2〇 過程中，可以確保該第一支撐層(20)以及該第二支撐層（22) 不會被蝕刻而保留下來；至此，該第一支撐層（20)以及該第 二支撐層（22)即形成有一兩端連通外界之通道(18)(如第七 圖所示）；該通道(18)於該基板(10)表面形成一入口（181)以 及一出口（182);本實施例中；該入口（181)與該出口（182) 8 1331595 (482)位於該基板(4〇)頂侧，該入口（481)與該出口（48幻之位 置於水平方向不相互重疊。 經由上述步驟，本實施例所提供用於微機電模組基板 形成通道之方法運用蝕刻（etching)與射出成型（injecti〇n 5 molding)方式，採用對單一主體進行加工的方式取代堆疊式 基板結構(stack substrate structure);本發明之技術精神在於 讀刻彳式逐漸形成預定路#，再使用射出成型方式逐漸 • 形成該第一支撐層(50)以及該第二支撐層⑽，以達到形成 該通道(48)之目的；同時，其相較於習用者，具有降低基板 整體向度之特色。另夕卜，本實施例係先對該基板(4〇)姓刻出 該第-空間(42)以及該第二空間(44)，再以射出成型形成該 支撺層(50)以及該第二支#層(52);本實施例之步 ^驟e)的程序恰好與第-難實施例之步驟…及步驟〇 的％序相反。藉此，本實施例同樣可以達到製作通道之目 15的，並提供另一實施態樣。 請參閱第十六圖至第二十三圖，其係為本發明第三較 -佳實施例所提供之用於微機電模組基板形成通道之方法， 包含下列各步驟： t a)首先，提供一基板(60)係選自以玻璃纖維、環氧樹 脂、聚亞酿胺樹脂、樹脂以及Βτ樹脂所構成之族群中 所選出的一種材料所製成者；該基板_的厚度在〇.30mm 以下，該基板(60)的最佳厚度為〇25_ :本實施例中，該 =60)的厚度以0.25mm為例(如第十六_示），.對^ -β進行餘刻（etching)而形成一第一空間（62)(如第 1331595 十七圖所示）； b)對該基板(60)頂部進行蝕刻而形成一第二空間(64)以 及一具有通道形狀且位於該第二空間（64)之犧牲部(66)(如 第十八圖所示）； 5 c)以射出成型（injecti〇n molding)將熱固性樹脂填滿該 第一空間(62)而形成一第一支撐層（7〇)(如第十九圖所示）； 其中’該第一支撐層（70)之抗蝕係數係大於該基板(6〇); d) 以射出成型將熱固性樹脂填滿該第二空間（64)而形 成一第二支撐層(72)(如第二十圖所示）；其中，該第二支撐 川層（72)之抗银係數係大於該基板(6〇); e) 以蝕刻逐步除去該犧牲部(66)(如第二十一圖所示）； 由於該第一支撐層（7〇)以及該第二支撐層（72)之抗蝕係數 係大於該基板(60) ’所以在除去該基板(6〇)之犧牲部(66)的 I虫刻過程中，可以確保該第一支撐層（7〇)以及該第二支撐層 15 (72)不會被蝕刻而保留下來；至此，該第一支撐層（7〇)以及 該第二支撐層（72)即形成有一兩端連通外界之通道(68)(如 第二十二圖所示）；該通道(68)係於該基板(60)表面形成一入 口（681)以及一出口（682)且該通道(68)連通該基板(60)兩相 對側；本實施例中；該入口（681)位於該基板(4〇)底側，該 2〇出口（682)位於該基板(40)頂侧，該入口（681)與該出口（682) 之位置於水平方向係不相互重疊。 經由上述步驟，本實施例之步驟係與第二較佳實施例 之步驟相同；主要目的在於說明本發明如何形成不同型態 的通道。藉此，本實施例同樣能夠達到製作通道之目的， 12 1331595 並提供又一實施態樣。 "月參閱第一十一圖，其係為本案第三較佳實施例之具 有該通道(68)的基板(60)應用於一微機電模組(8〇)之實施離 樣’該微機電模組(80)包含有該基板(6〇)、一微機電元件(82) 5以及一金屬蓋(84)該微機電元件(82)設於該基板(6〇)頂側 . 且遮蔽該出口（682);該金屬蓋(84)設於該基板(60)頂侧且遮 - 蔽該微機電元件(82)，該金屬蓋(84)與該基板(6〇)形成一密 φ 閉容室(85) ’以容置該微機電元件(82);如此-來，外界物 理訊號可穿經該基板(60)之入口（681)，再經由該通道㈣ ίο傳遞至該微機電元件(82)，以達到接收外界訊號之目的。 纟;τ'上所陳，經由以上所提供的實施例可知，本發明之 用於微機電模組基板形成通道之方法運用蝕刻與射出成型 料’採用對單-域進行加工的方式取代堆疊式基板結 構，本發明之技術精神在於以蝕刻方式逐漸形成預定路 ^徑，再使用射出成型方式逐漸形成多數支撐層，以達到形 ·' 成該通，之目的；同時，其相較於習用者，本發明能夠將 - 該基板高度減至G.36mm以下，具有降低基板整體高度之特 色。 本發明於前揭實施例中所揭露的構成元件，僅為舉例 2〇說明，並非用來限制本案之範圍，其他等效元件的替代或 變化，亦應為本案之申請專利範圍所涵蓋。 13 1331595 【圖式簡單說明】 第一圖為本發明第一較佳實施例之加工示意圖，主要 揭示基板於加工前之剖視圖。 第二圖為本發明第一較佳實施例之加工示意圖，主要 5 揭示第一空間的位置。 第三圖為本發明第一較佳實施例之加工示意圖，主要 揭示第一支撐層的位置。 第四圖為本發明第一較佳實施例之加工示意圖，主要 揭示第二空間以及犧牲部的位置。 10 第五圖為本發明第一較佳實施例之加工示意圖，主要 揭示第二支撐層的位置。 第六圖為本發明第一較佳實施例之加工示意圖，主要 揭示通道的形成過程。 第七圖為本發明第一較佳實施例之加工示意圖，主要 15 揭示通道的結構。 第八圖為本發明第一較佳實施例之應用於一微機電模 組之實施態樣。 第九圖為本發明第二較佳實施例之加工示意圖，主要 揭示基板於加工前之剖視圖。 20 第十圖為本發明第二較佳實施例之加工示意圖，主要 揭示第一空間的位置。 第十一圖為本發明第二較佳實施例之加工示意圖，主 要揭示第二空間以及犧牲部的位置。 第十二圖為本發明第二較佳實施例之加工示意圖，主 14 1331595 要揭示第一支撐層的位置。 第十三圖為本發明第二較佳實施例之加工示意圖，主 要揭示第二支撐層的位置。 第十四圖為本發明第二較佳實施例之加工示意圖，主 5 要揭示通道的形成過程。 第十五圖為本發明第二較佳實施例之加工示意圖，主 要揭示通道的結構。 第十六圖為本發明第三較佳實施例之加工示意圖，主 要揭示基板於加工前之剖視圖。 10 第十七圖為本發明第三較佳實施例之加工示意圖，主 要揭示第一空間的位置。 第十八圖為本發明第三較佳實施例之加工示意圖，主 要揭示第二空間以及犧牲部的位置。 第十九圖為本發明第三較佳實施例之加工示意圖，主 15要揭示第一支撐層的位置。 第二十圖為本發明第三較佳實施例之加工示意圖，主 要揭示第二支撐層的位置。 第二十一圖為本發明第三較佳實施例之加工示意圖， 主要揭示通道的形成過程。 20 第二十二圖為本發明第三較佳實施例之加工示意圖， 主要揭示通道的結構。 第二十三圖為本發明第三較佳實施例之應用於一微機 電模組之實施態樣。 15 1331595m is removed by M + #, having an n shape and located at the second space...), the λ is filled to fill the second space (4) to remove the ridge portion on the side, and the first 料 钱 layer is formed The two ends are connected to the outside channel. In this case, the method of the present invention is applied to the method of MEMS, and the method of "injection mokling" replaces the stacked substrate structure by means of processing a single body (stack bstrate structure) The technical spirit of the present invention is that the predetermined path is gradually formed by etching in the form of etching, and then the support layer is gradually formed by the injection molding method to achieve the purpose of the material forming channel; at the same time, it is lower than that of the user. The overall height of the substrate. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS In order to explain the structure, features and advantages of the present invention in detail, the following description of the preferred embodiments of the invention The cross-sectional view of the substrate before processing is mainly disclosed. The second drawing is a schematic view of the processing of the first preferred embodiment of the present invention, and the main position 1331595 discloses the position of the first space. The third figure is a schematic view of the processing of the first preferred embodiment of the present invention, mainly showing the position of the first support layer. The fourth figure is a schematic view of the processing of the first preferred embodiment of the present invention, and the main portion 5 discloses the position of the second space and the sacrificial portion. Fig. 5 is a schematic view showing the processing of the first preferred embodiment of the present invention, mainly showing the position of the second supporting layer. Fig. 6 is a schematic view showing the processing of the first preferred embodiment of the present invention, mainly showing the formation process of the passage. 10 is a schematic view showing the processing of the first preferred embodiment of the present invention, mainly showing the structure of the passage. The eighth figure is an embodiment of the first preferred embodiment of the present invention applied to a microelectromechanical module. Figure 9 is a schematic view showing the processing of a second preferred embodiment of the present invention, and main section 15 discloses a cross-sectional view of the substrate before processing. Figure 11 is a schematic view showing the processing of the second preferred embodiment of the present invention, mainly showing the position of the first space. Fig. 11 is a schematic view showing the processing of the second preferred embodiment of the present invention, mainly showing the position of the second space and the sacrificial portion. Figure 12 is a schematic view of the processing of the second preferred embodiment of the present invention, mainly showing the position of the first support layer. Fig. 13 is a schematic view showing the processing of the second preferred embodiment of the present invention, mainly showing the position of the second supporting layer. Fig. 14 is a schematic view showing the processing of the second preferred embodiment of the present invention, and the main portion 6 is to disclose the formation process of the channel. Fig. 15 is a view showing the structure of the channel of the second preferred embodiment of the present invention. Fig. 16 is a cross-sectional view showing the substrate before processing in accordance with the processing of the third preferred embodiment of the present invention. Intentional Intent Main Master Main Figure 17 is a schematic view of the processing of the third preferred embodiment of the present invention to reveal the position of the first space. Fig. 8 is a schematic view showing the processing of the third preferred embodiment of the present invention, mainly showing the position of the second space and the sacrificial portion. Fig. 19 is a schematic view showing the processing of the third preferred embodiment of the present invention, mainly showing the position of the first supporting layer. Fig. 20 is a schematic view showing the processing of the third preferred embodiment of the present invention, mainly showing the position of the second supporting layer. Figure 21 is a schematic view showing the processing of the third preferred embodiment of the present invention, mainly showing the formation process of the channel. A main disclosure of the second embodiment of the present invention is not intended to be processed by a microcomputer. The twenty-third embodiment is an embodiment of the application of the electrical module according to the third preferred embodiment of the present invention. Referring to FIG. 1 to FIG. 7 , the method for forming a channel for a MEMS module substrate according to the first preferred embodiment of the present invention is as follows: A is also listed in each step: First, a substrate (10) is selected from one selected from the group consisting of glass fiber, grease, polyamido resin, FR4 resin, and BT resin; the substrate (1 〇) The thickness of the substrate (1〇) is 〇25mm; in this embodiment, the thickness of the substrate (10) is 〇.25mm (as shown in the first figure); The bottom of the substrate (etching) is subjected to etching to form a first space (12) (as shown in FIG. 5); b) filling the first space with a thermosetting resin by injection molding (12) forming a first support layer (20) (as shown in the third figure); wherein the first support layer (20) has a resist coefficient greater than the substrate (1〇); c) the substrate (10) The top is etched to form a plurality of second spaces (14) 10 and a sacrificial portion (16) having a channel shape and located in the second space (14) (eg, fourth D) forming a plurality of second support layers (22) by injection molding a thermosetting resin to fill each of the second spaces (14) (as shown in FIG. 5); in this embodiment, the second support The bottom of the layer (22) is integrally formed with the top of the first supporting layer (20) 15 to be integrated with each other, and the boundary between the two is less easily recognized; wherein the resist coefficient of the second supporting layer (22) is Greater than the substrate (10); e) progressively removing the sacrificial portion (16) by etching (as shown in FIG. 6); due to the first support layer P〇) and the resistivity of the second support layer (22) The system is larger than the substrate (10), so that during the etching of the sacrificial portion (16) of the substrate (10), the first support layer (20) and the second support layer (22) are not ensured. The first support layer (20) and the second support layer (22) are formed with a channel (18) communicating with the outside end (as shown in FIG. 7); the channel (18) Forming an inlet (181) and an outlet (182) on the surface of the substrate (10); in the present embodiment; the inlet (181) and the outlet (182) 8 1331595 (482) is located on the top side of the substrate (4), the inlet (481) and the outlet (the position of the magical point does not overlap each other in the horizontal direction. Through the above steps, the present embodiment provides for the formation of the microelectromechanical module substrate The method of the channel uses an etching and injection molding method to replace the stacked substrate structure by processing a single body; the technical spirit of the present invention is to gradually read the engraving method. Forming a predetermined path #, and then using the injection molding method to gradually form the first support layer (50) and the second support layer (10) to achieve the purpose of forming the channel (48); at the same time, compared to the conventional Reduce the overall orientation of the substrate. In addition, in this embodiment, the first space (42) and the second space (44) are first engraved on the substrate (4 〇), and the support layer (50) and the first portion are formed by injection molding. The two #层(52); the procedure of step e) of the present embodiment is exactly opposite to the step of the first-difficult embodiment and the % order of the step 〇. Thereby, this embodiment can also achieve the purpose of making a channel, and provide another embodiment. Please refer to the sixteenth to twenty-third figures, which are the third preferred embodiment of the present invention for forming a channel for a MEMS module substrate, comprising the following steps: ta) First, provide A substrate (60) is selected from the group consisting of a glass fiber, an epoxy resin, a polyalkylene oxide resin, a resin, and a material selected from the group consisting of Βτ resin; the thickness of the substrate _30 mm Hereinafter, the optimum thickness of the substrate (60) is 〇25_: in the present embodiment, the thickness of the =60) is 0.25 mm (as shown in the sixteenth), and the etching is performed on ^-β (etching) Forming a first space (62) (as shown in FIG. 1331595); b) etching the top of the substrate (60) to form a second space (64) and having a channel shape and located at the a sacrificial portion (66) of the second space (64) (as shown in FIG. 18); 5 c) filling the first space (62) with a thermosetting resin by injection molding to form a first a support layer (7〇) (as shown in FIG. 19); wherein 'the first support layer (70) has a resist coefficient greater than the substrate (6〇); d) Injection molding fills the second space (64) with a thermosetting resin to form a second support layer (72) (as shown in FIG. 20); wherein the second support layer (72) has an anti-silver coefficient Greater than the substrate (6〇); e) progressively removing the sacrificial portion (66) by etching (as shown in FIG. 11); due to the first support layer (7〇) and the second support layer (72) The resist coefficient is greater than the substrate (60)' so that the first support layer (7〇) and the second support can be ensured during the process of removing the sacrificial portion (66) of the substrate (6〇) The layer 15 (72) is not etched and remains; thus, the first support layer (7〇) and the second support layer (72) are formed with a channel (68) communicating with the outside at both ends (such as the twentieth The channel (68) is formed on the surface of the substrate (60) to form an inlet (681) and an outlet (682) and the channel (68) communicates with the opposite sides of the substrate (60); The inlet (681) is located on the bottom side of the substrate (4〇), the 2〇 outlet (682) is located on the top side of the substrate (40), and the inlet (681) and the outlet (682) are in a horizontal direction. Overlap each other. Through the above steps, the steps of the present embodiment are the same as those of the second preferred embodiment; the main purpose is to explain how the present invention forms channels of different types. Thereby, the embodiment can also achieve the purpose of making a channel, 12 1331595 and provide another embodiment. "Monthly, refer to the eleventh figure, which is a third embodiment of the present invention, wherein the substrate (60) having the channel (68) is applied to a microelectromechanical module (8〇) The electromechanical module (80) comprises the substrate (6〇), a microelectromechanical component (82) 5 and a metal cover (84). The microelectromechanical component (82) is disposed on the top side of the substrate (6〇). The outlet (682); the metal cover (84) is disposed on the top side of the substrate (60) and shields the microelectromechanical component (82), and the metal cover (84) forms a dense relationship with the substrate (6〇) a closing chamber (85)' to receive the MEMS element (82); thus, an external physical signal can pass through the inlet (681) of the substrate (60), and then pass to the MEMS via the channel (4) Element (82) for the purpose of receiving external signals. According to the embodiment provided above, the method for forming a channel for a MEMS module substrate of the present invention uses the etching and injection molding material to replace the stacked type by processing the single-domain. The substrate structure, the technical spirit of the present invention is that the predetermined path is gradually formed by etching, and then a plurality of support layers are gradually formed by injection molding to achieve the purpose of forming the pass, and at the same time, compared with the conventional one. The present invention can reduce the height of the substrate to less than G.36 mm, and has the feature of reducing the overall height of the substrate. The components of the present invention disclosed in the foregoing embodiments are merely illustrative and are not intended to limit the scope of the present invention. The alternatives or variations of other equivalent components are also covered by the scope of the patent application. 13 1331595 BRIEF DESCRIPTION OF THE DRAWINGS The first drawing is a schematic view of the processing of the first preferred embodiment of the present invention, and mainly discloses a cross-sectional view of the substrate before processing. The second drawing is a schematic view of the processing of the first preferred embodiment of the present invention, and the main 5 discloses the position of the first space. The third figure is a schematic view of the processing of the first preferred embodiment of the present invention, mainly showing the position of the first support layer. The fourth figure is a schematic view of the processing of the first preferred embodiment of the present invention, mainly showing the position of the second space and the sacrificial portion. 10 is a schematic view showing the processing of the first preferred embodiment of the present invention, mainly showing the position of the second supporting layer. Fig. 6 is a schematic view showing the processing of the first preferred embodiment of the present invention, mainly showing the formation process of the passage. The seventh drawing is a schematic view of the processing of the first preferred embodiment of the present invention, and the main structure 15 discloses the structure of the passage. The eighth figure is an embodiment of the first preferred embodiment of the present invention applied to a microelectromechanical module. Figure 9 is a schematic view showing the processing of the second preferred embodiment of the present invention, mainly showing a cross-sectional view of the substrate before processing. 20 is a schematic view showing the processing of the second preferred embodiment of the present invention, mainly showing the position of the first space. Fig. 11 is a schematic view showing the processing of the second preferred embodiment of the present invention, mainly showing the position of the second space and the sacrificial portion. Fig. 12 is a schematic view showing the processing of the second preferred embodiment of the present invention, and the main 14 1331595 discloses the position of the first support layer. Fig. 13 is a schematic view showing the processing of the second preferred embodiment of the present invention, mainly showing the position of the second supporting layer. Fig. 14 is a schematic view showing the processing of the second preferred embodiment of the present invention, and the main body 5 discloses the formation process of the passage. Fig. 15 is a schematic view showing the processing of the second preferred embodiment of the present invention, mainly showing the structure of the passage. Fig. 16 is a schematic view showing the processing of the third preferred embodiment of the present invention, mainly showing a cross-sectional view of the substrate before processing. 10 is a schematic view showing the processing of the third preferred embodiment of the present invention, mainly showing the position of the first space. Fig. 18 is a schematic view showing the processing of the third preferred embodiment of the present invention, mainly showing the position of the second space and the sacrificial portion. Fig. 19 is a schematic view showing the processing of the third preferred embodiment of the present invention, and the main body 15 is to disclose the position of the first supporting layer. Fig. 20 is a schematic view showing the processing of the third preferred embodiment of the present invention, mainly showing the position of the second supporting layer. Figure 21 is a schematic view showing the processing of the third preferred embodiment of the present invention, mainly showing the formation process of the channel. 20 is a schematic view showing the processing of the third preferred embodiment of the present invention, mainly showing the structure of the channel. Figure 23 is a view showing an embodiment of a third embodiment of the present invention applied to a microcomputer module. 15 1331595
【主要元件符號說明】 基板(10) 第一空間（12) 第二空間（14) 犧牲部(16) 通道(18) 入口（181) 5 出口（182) 第一支撐層(20) 第二支撐層(22) 微機電模組(30) 微機電元件(32) 金屬蓋(34) 容室(35) 穿孔(3 6) 基板(40) 第一空間(42) 10 第二空間(44) 犧牲部(46) 通道(48) 出口 (482) 入口（481) 第一支撐層（50) 第二支撐層(52) 基板(60) 第一空間(62) 15 第二空間(64) 犧牲部(66) 通道(68) 入口（681) 出口 (682) 第一支撐層(70) 第二支撐層(72) 微機電模組(80) 微機電元件(82) 金屬蓋(84) 20 容室(85) 16[Main component symbol description] Substrate (10) First space (12) Second space (14) Sacrificial part (16) Channel (18) Entrance (181) 5 Exit (182) First support layer (20) Second support Layer (22) MEMS Module (30) MEMS Component (32) Metal Cover (34) Housing (35) Perforation (3 6) Substrate (40) First Space (42) 10 Second Space (44) Sacrifice Part (46) Channel (48) Outlet (482) Entrance (481) First Support Layer (50) Second Support Layer (52) Substrate (60) First Space (62) 15 Second Space (64) Sacrifice ( 66) Channel (68) Entrance (681) Exit (682) First support layer (70) Second support layer (72) MEMS module (80) MEMS components (82) Metal cover (84) 20 chamber ( 85) 16