TWI330879B - Spiral inductor with multilayer structure - Google Patents

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention This invention relates to a semiconductor integrated circuit, and more particularly to a wafer-on-chip inductor having a multilayer structure. [Previous Techniques] Digital and analog circuits have been successfully used in semiconductor integrated circuits. Traditionally, on-chip inductors are formed on the substrate and used in RF band integrated circuit design. Fig. 1 is a schematic view showing a conventional in-line inductor element profile having a planar spiral structure. The in-chip inductor component is formed in a dielectric layer 104 above a substrate 100 and includes a spiral conductor 103 and an interconnect structure. The spiral wire 103 is embedded in the dielectric layer 104. The interconnect structure includes conductive plugs 105 and 109 and a conductive layer 107 embedded in a dielectric layer 102 and a conductive layer 111 embedded in the insulating layer 104. The dielectric layer 102 is disposed between the dielectric layer 104 and the substrate 100, and the spiral wire 103 forms a current path through the conductive plugs 105 and 109 and the conductive layers 107 and 111 to electrically connect with external or internal circuits of the wafer. . In the rapid development of communication systems, system chips typically have radio frequency circuits and digital or baseband circuits. Since the RF circuit occupies less than a digital or baseband circuit in a MOSFET, the entire chip design is a digital or baseband circuit. Compared with the inductive component of the general RF circuit, the coil thickness of the inductive component in the system wafer is thin, so that the quality factor (Q value) is lowered. Since the performance of the integrated circuit depends on the quality factor of the built-in inductive component of the chip, it is necessary to seek a new one.

Clients Docket No.: VIT06-0124/2007-01 -24 TT's Docket No:0608-A40974-TW/fmal/王琮郁/ 5 1.330879 Inductor component structure to increase the quality factor of the inductor component [Invention] In view of this, this The present invention provides an element for improving the quality of the inductor while constructing a spiral inductor. According to the above object, the present invention provides a frequency range. The rotary inductance element 'includes: an insulating layer, a:: a snail of a layer structure and has a complex number " laminated structure setting: === and is connected between the thread of the snail and a ground, including a complex ^ Layer and complex guide plugs. The (four) electrical plug is disposed at 1 to electrically connect the conductive layers. The snail is used between θ; according to the purpose of the description, the present invention provides a multilayer structure, θ ο χ; on the substrate. The spiral wire is disposed in the insulating layer and: The n stacked layer structures are correspondingly disposed in the insulating layer below the wire, wherein n is not greater than = the electrical connection, and the money-stack layer structure comprises: a complex ^ = conductive plug. These conductive plugs are electrically connected to the spiral wires and the electrical layer. The number of layers of the outermost turns and the innermost turns of the corresponding spiral wires is different, and the stacked layer structure having the largest number of conductive layers is connected to a ground. [Embodiment] Hereinafter, a spiral inductor (IT) having a structure according to an embodiment of the present invention will be described with reference to FIGS. 2 and 3, wherein the second figure shows a plan view of a spiral inductor element having a plurality of layers of junctions, and the third figure is a flange. Show ^ 2

Client’s Docket Νο.:νΐΤ06·0124/2007-01-24 TT’s Docket No:0608-A40974-TW/final/王综郁 / 6 1.330879 Schematic diagram of the 3-3' line in the figure. In Fig. 3A, the spiral inductor element comprises: a spiral wire 221 embedded in an insulating layer and a stacked layer structure, wherein the insulating layer is disposed on a substrate 200. Substrate 200 includes a stone substrate or other conventional semiconductor substrate. A variety of different components can be included in substrate 200, such as transistors, resistors, and other conventional semiconductor components. Further, the substrate 200 may also include other conductive layers (e.g., copper, aluminum, or alloys thereof) and an insulating layer (e.g., a hafnium oxide layer, a tantalum nitride layer, or a low dielectric material layer). Here, for the sake of simplicity, the figure 'is represented only by a flat substrate. In this embodiment, the insulation may include dielectric layers 202, 204, 206, 208, and 210 disposed on the substrate 200 in sequence. Dielectric layers 202, 204, 206, 208, and 210 can include a hafnium oxide layer, a tantalum nitride layer, or a low dielectric material layer. The spiral wire 221 is embedded in the dielectric layer 210 and has a plurality of turns, such as three turns. The spiral wire 221 may be of a round shape, a rectangular shape, a hexagonal shape, an octagonal shape, or a polygonal type. Here, the octagonal type is taken as an example. The stacked layer structure is embedded in the dielectric layers 204, 206 and 208 below the spiral wires 221 and connected to the spiral wires 221 and a ground terminal G, and includes a plurality of conductive layers 203, 205 and 207 and a plurality of conductive plugs 211 and 213 . For example, conductive layers 203, 205, and 207 may be disposed within dielectric layers 204, 206, and 208, respectively. The conductive layers 203, 205, and 207 overlap and are separated from each other. The conductive plug 211 is disposed between the conductive layers 203 and 205, and the conductive plug 213 is disposed between the conductive layers 205 and 207 to electrically connect the conductive layers 203, 205 and 207, wherein adjacent conductive layers are disposed At least two conductive plugs. In this embodiment, the conductive layers 203, 205, and 207 and the conductive plugs 211 and 213 may be made of copper, aluminum, or an alloy thereof.

Client's Docket No.:VIT06-0124/2007-01-24 TT's Docket No:0608-A40974-TW/final/王琮郁/ 7 1.330879 Furthermore, the thickness of the spiral wire 221 is larger than at least one layer of the conductive layers 203, 205 and 207. The line width of the spiral wire 221 is substantially the same as that of the conductive layers 203, 205, and 207. Next, two conductive plugs 215 are disposed within the dielectric layer 208 between the spiral wires 221 and the stacked layer structure. One of the conductive plugs 215 is electrically connected to one end of the innermost end of the spiral 'line 221 and one end of the conductive layers 2〇7, 2〇5 and 2〇3, and the other conductive plug 215 is electrically connected to the conductive layer 2〇 The other of 7, 2, 5 and 203 is electrically connected to the conductive layer 209' in the dielectric layer 2〇8 above the conductive layer 2〇7 to electrically connect the spiral wire 221 and the stacked layer structure. Further, the stacked layer structure is connected to the ground through the conductive layer 2〇9. Similarly, the material of the conductive layer 209 and the conductive plug 215 may include copper, aluminum, or an alloy thereof. S outside, it should be noted that the above stacked layer structure is illustrated by three conductive layers 203, 205 and 207 embedded in the dielectric layers 2〇4, 2〇6 and 2〇8, but the multilayer interconnect structure can be A layer of one or more conductive layers is included. That is, in Fig. 3A, only one or one of the conductive layers 2?3, 2?5 and 2?7 may be left to electrically connect the conductive layer 209 and the spiral wire 221. • Referring to Fig. 3B, a cross-sectional view of another embodiment of the line taken along line 3-3 of Fig. 2 is used, and the same reference numerals are used for the same parts as those of Fig. 3A, and the description thereof is omitted. The stacked layer structure of the present embodiment corresponds to the dielectric layers 208 and 206 disposed under the innermost turns of the spiral wires 221, as shown in FIGS. 5A and 5B, which respectively illustrate the stacked layer structure of FIG. 3B in dielectric A schematic plan view of layers 208 and 206. That is, the 'stacked layer structure overlaps the innermost turn of the spiral wire 221. Here, the stacked layer structure includes a plurality of conductive layers 205b and 207b and a plurality of conductive plugs 213a and 21la. For example, conductive layers 205b and 207b

Client's Docket No.: VIT06-0124/2007-01-24 TT’s Docket No: 0608-A40974-TW/final/Wang Yuyu/8 1330879 can be disposed in the dielectric layers 206 and 208. The conductive layers 205b and 207b overlap and are separated from each other. The conductive plug 213a is disposed between the conductive layers 205b and 207b to electrically connect the conductive layers 205b and 207b, wherein at least two conductive plugs are disposed between the adjacent conductive layers. In addition, the stacked layer structure is connected to the spiral wire 221 by a conductive plug 215a disposed in the dielectric layer 208, and is grounded by connecting the conductive plug 21 la to an interconnect structure and the conductive layer 209. In the present embodiment, the interconnect structure includes a plurality of conductive layers 203, 205a and 207a and a plurality of conductive plugs 211, 213 and 215. Conductive layers 205a and 207a may be disposed in dielectric layers 206 and 208, respectively. The conductive plugs 211 and 213 are electrically connected between the conductive layers 203, 205a and 207a, and the conductive plugs 215 are electrically connected between the conductive layers 207a and 209. Referring again to Figure 3B. It should be noted that the conductive layers 205a and 205b can be electrically connected directly in the dielectric layer 206 without being electrically connected through the conductive plugs 211 and '211a and the conductive layer 203, for example, the dielectric layer is located in FIG. 3C. Conductive layers 203a and 203b in 204 are shown. Referring to Fig. 3C, there is shown a cross-sectional view of another embodiment taken along line 3-3' in Fig. 2, wherein the same components as those of Figs. 3A and 3B are designated by the same reference numerals and the description thereof will be omitted. In the present embodiment, the spiral inductance element includes a spiral wire 221 having m匝 and n stacked layer structures, where η is not larger than m. Furthermore, the stacked layer structures are electrically connected to each other. A stacked layer structure corresponds to one of the spiral wires 221. When η is smaller than m (for example, η is 2 and m is 3), a stacked layer structure is not provided under at least one turn of the spiral wire 221. For example, the bottom layer of the spiral wire 221 is not provided with a stacked layer structure. Furthermore, the number of conductive layers in the stacked layer structure of each of the corresponding spiral wires 221 can be increased from the outer turn to the inner turn, so that the innermost turn of the corresponding spiral wire 221 has the largest number of conductive layers, such as 6A, 6B,

Clienfs Docket No.:VIT06-0124/2007-01-24 TT's Docket No:0608-A40974-TW/final/Wang Yuyu/1330879 and 6C are shown in Fig. 3, which respectively depict the stacked layer structure of the 3C figure in dielectric Zhan A schematic plan view of 208, 206, and 204. In the present embodiment, 'the innermost end of the spiral wire 221 is connected to the corresponding end of the conductive layer in the lower stacked layer structure and is connected to the ground terminal G by an interconnect structure. In the present embodiment, the stacked layer structure corresponding to the innermost turn of the spiral wire 221 includes a plurality of conductive layers 203b, 205b, and 207b and a plurality of conductive plugs 211a, 213a, and 215a. For example, conductive layers 203b, 205b, and 207b may be disposed within dielectric layers 204, 206, and 208, respectively. The conductive layers 203b, 205b, and 207b are electrically connected to each other by the conductive plugs 211a and 213a, and are electrically connected to the spiral wires 221 and the interconnect structure by the conductive plugs 215a. In the present embodiment, the interconnect structure includes a plurality of conductive layers 203a, 205a, and 207a and a plurality of conductive plugs 211, 213, and 215. Conductive layers 203a, 205a, and 207a may be disposed within dielectric layers 204, 206, and 208, respectively. The conductive plugs 211 and 213 are electrically connected between the conductive layers 203a, 205a and 207a, and the conductive plugs 215 are electrically connected between the conductive layers 207a and 209. Further, the stacked layer structure corresponding to the middle turn of the spiral wire 221 includes a plurality of conductive layers 205c and 207c and a plurality of conductive plugs 213b and 215b. For example, conductive layers 205c and 207c may be disposed within dielectric layers 206 and 208, respectively. The conductive layers 205c and 207c are electrically connected to each other by the conductive plugs 213b, and are electrically connected to the spiral wires 221 by the conductive plugs 215b. Referring to Fig. 4A, there is shown a cross-sectional view of one of the lines taken along line 4-4 of Fig. 2, wherein the same components as those of Fig. 3A are denoted by the same reference numerals and the description thereof will be omitted. In the present embodiment, the stacked layer structure is embedded in the dielectric layers 204, 206, 208, and 210 and connected to the spiral wires 221 and a ground terminal G. And the stacked layer structure is connected to the outermost of the spiral wire 221

Client's Docket No. :VIT06-0124/2007-01-24 TT’s Docket No:0608-A40974-TW/fmal/王琮郁/ 1330879 One end of the 匝. In Fig. 4A, the stacked layer structure includes a plurality of conductive layers 3?3, 3?5, 307 and 223 and a plurality of conductive plugs 3?9, 311 and 313. For example, conductive layers 303, 305, 307, and 223 may be disposed within dielectric layers 204, 206, 208, and 210, respectively. Specifically, the conductive layer 223 is located at the same layer position as the spiral wire 221 and is connected to the end located at the outermost turn of the spiral wire 221. The conductive plugs 309, 311 and 313 are disposed between the conductive layers 303, 305, 307 and 223 to electrically connect the conductive layers 3〇3, 3〇5, 307 and 223. In the present embodiment, the thickness of the spiral wire 221 is larger than at least one of the conductive layers 303, 305, 307, and 223, and the wire width of the spiral wire 221 is substantially the same as that of the conductive layers 303, 305, 307, and 223. Further, the stacked layer structure is connected to the ground terminal g by the conductive layer 223. Referring to Figure 4B, a cross-sectional view of another embodiment of the line taken along line 4-4 of Figure 2 is shown. The stacked layer structure of the present embodiment corresponds to the dielectric layers 208, 206, and 204 disposed under the outermost turns of the spiral wires 221, as shown in FIGS. 7A to 7C, which respectively depict the stacked layer structure of FIG. 4B. A schematic plan view of dielectric layers 208, 206, and 204. That is, the stacked layer structure # overlaps with the outermost turns of the spiral wires 221, and includes a plurality of conductive layers 303a, 305a, and 307a and a plurality of conductive plugs 309a, 311a, and 313a. For example, the conductive layers 303a, 305a, and 307a may be disposed in the dielectric layers 204, 206, and 208, and overlap and separate from each other. The conductive plugs 309a, 311a, and 313a are disposed between the conductive layers 303a, 305a, and 307a for electrical connection, wherein the stacked layer structure and the spiral wire 221 are connected by the conductive plug 313a disposed in the dielectric layer 208. One end of the outer casing is connected to the ground terminal G by a conductive layer 223 which is also connected to the outermost end of the spiral wire 221.

Client's Docket No.:VIT06-0124/2007-01-24 TT's Docket No:0608-A40974-TW/fmal/王琮郁/ 11 1330879 Please refer to Figure 4C', which shows the 4_4 along the 2nd line, the other line BRIEF DESCRIPTION OF THE DRAWINGS A cross-sectional view of an embodiment in which components are the same as those in FIG. 4B are denoted by the same reference numerals and their description is omitted. The spiral inductor element of this embodiment includes and has a spiral conductor 221 and a stacked layer structure, wherein n is not larger than the claw (for example, 'm and η are 3). In this embodiment, the corresponding spiral wire 22i is blocked. The number of layers of the conductive layer in the stacking structure can be increased by the internal resistance, so that the number of conductive layers corresponding to the outermost resistance of the spiral wire 221 is the largest, as shown in the eighth to eighth figures, which respectively show the fourth layer. The stacked layer structure of the figure is a schematic plan view of the dielectric layers 208, 206, 204, and 202. Further, in the present embodiment, the corresponding end of the conductive layer in the outermost_end of the spiral wire 221 and the lower stacked layer structure Connected and connected to the ground by a conductive layer 223 also connected to the outermost end of the spiral wire 221. The stacked layer structure corresponding to the outermost resistance of the spiral wire 221 includes a plurality of conductive layers 301, 303a, 305a, and 307a and a plurality Conductive plugs 3〇9a, 311a, 313a and 315. For example, the conductive layers 3〇1, 3〇3a, 3〇5a and 307a may be correspondingly disposed in the dielectric layers 202, 204, 206 and 208. Between 301, 303a, 305a and 307a by conductive plugs 309a, 311a Φ and 315 are electrically connected to each other' and electrically connected to the spiral wire 221 by the conductive plug 313a. Further, the stacked layer structure corresponding to the middle turn of the spiral wire 221 includes a plurality of conductive layers 303b, 305b and 307b and a plurality of conductive plugs Plugs 309b, 311b, and 313b. For example, conductive layers 303b, 305b, and 307b may be disposed in dielectric layers 204, 206, and 208. Conductive layers 204, 206, and 208 are electrically connected to each other by conductive plugs 309b and 311b. Electrically connected, and electrically connected to the spiral wire 221 by the conductive plug 313b. In addition, the stacked layer structure corresponding to the innermost turn of the spiral wire 221 includes a plurality of conductive layers 305c and

Client's Docket No. :VIT06-0124/2007-01-24 TT’s Docket No: 0608-A40974-TW/final/Wang Yuyu / 1.330879 307c and a plurality of conductive plugs 311c and 313c. For example, conductive layers 305c and 307c may be disposed in dielectric layers 206 and 208, respectively. The conductive layers 305c and 307c are electrically connected to each other by a conductive plug 311c, and are electrically connected to the spiral wire 221 by a conductive plug 313c. It should be noted that the stacked layer structure may not be disposed under the innermost turn of the spiral wire 221 . It should be noted that in the embodiment of the present invention, the conductive layers in the stacked layer structure are electrically connected in parallel by a plurality of conductive plugs. In the above embodiment, the function of the stacked layer structure is to reduce the conductor loss of the spiral wire 221, thereby improving the quality factor of the inductance element without increasing the thickness of the spiral wire 221 . Furthermore, the stacked layer structure or the stacked layer structure having the largest number of conductive layers is electrically connected to one end G of the ground of the spiral wire 221 (i.e., at the innermost or outermost end of the spiral wire 221). Since the grounding end of the spiral wire 221 has a souther current density (i.e., a 5 souther magnetic field) and a lower electric field, the parasitic capacitance effect between the stacked layer structure and the substrate can be alleviated. Therefore, the spiral inductor element according to the present invention can maintain the frequency range available for the inductor element while improving the quality factor of the inductor element. The present invention has been disclosed in the above preferred embodiments, and is not intended to limit the invention, and the present invention may be modified and retouched without departing from the spirit and scope of the invention. The scope of protection is subject to the definition of the scope of the patent application. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic cross-sectional view showing a conventional inductive element. Fig. 2 is a plan view showing a spiral inductor element having a multilayer structure according to an embodiment of the present invention.

Client's Docket No.:VIT06-0124/2007-01-24 TT's Docket No:0608-A40974-TW/fmal/王琮郁/ 1330879 Figures 3A to 3C show the 3-3' line along the 2nd figure A schematic cross-sectional view of an embodiment of a multi-layered spiral inductor element. 4A to 4C are cross-sectional views showing an embodiment of a spiral inductor element having a multilayer structure along the line 4-4' in Fig. 2. 5A and 5B are plan views showing the stacked layer structures of Fig. 3B at dielectric layers 208 and 206, respectively. 6A, 6B, and 6C are schematic plan views showing the stacked layer structures of the 3Cth layer in the dielectric layers 208, 206, and 204, respectively. 7A, 7B, and 7C are plan views showing the stacked layer structures of Fig. 4B at dielectric layers 208, 206, and 204, respectively. 8A, 8B, 8C, and 8D are schematic plan views of the stacked structures of the 4Cth layer at dielectric layers 208, 206, 204, and 202, respectively. [Description of main component symbols] ~ spiral wire; ioo, 200~ substrate; 102, 104, 202, 204, 206, 208, 210 to dielectric layer; 107, 111, 203, 203a, 205, 205a, 205b, 205c, 207, 207a, 207b, 207c, 209, 223, 301, 303, 303a, 303b, 305, 305a, 305b, 305c, 307, 307a, 307b, 307c~ conductive layer; 105, 109, 2n, 211a, 213, 213a , 213b, 215, 215a, 215b, 309, 309a, 309b, 311, 311a, 311b, 311c, 313, 313a, 313b, 313c, 315~ conductive plug; G~ ground.

Client’s Docket No. :VIT06-0124/2007-01 -24 TT’s Docket No:0608-A40974-TW/final/王琮郁/ 14

Claims (1)

1-330879 X. Patent application scope: A spiral inductor component having a multi-layer structure, comprising: an insulating layer disposed on a substrate; an inner spiral wire disposed in the insulating layer and having a plurality of turns; and a stack a layer structure disposed between the insulating layer of the conductor τ and connected between the spiral conductor and a ground, comprising: a plurality of conductive layers; A plurality of conductive plugs are disposed between the conductive layers for electrically connecting the conductive layers. 2 = The spiral phase having a multi-layered structure as described in the application of the patent specification, wherein at least the layers of the conductive layers are in the same layer position as the spiral wires. ..., 3" is a spiral inductor read having a multi-layer structure as described in claim 1, wherein the stack structure is disposed below the outermost turn of the spiral wire. _ (as for the 70-piece spiral inductor having a multi-layer structure as described in the scope of the patent application), the (four) stacked layer structure is correspondingly disposed under the inside of the 。 。 。 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利A spiral inductor element, wherein the spiral wire is of a circular shape, a rectangular shape, a hexagonal shape, an octagonal shape, or a polygonal type. 6" A spiral inductor having a multilayer structure as described in the application a member, wherein the thickness of the spiral wire is greater than at least one layer of the conductive layer. The spiral element having a multi-layer structure as described in claim 1 is an inductive element that causes the spiral wire to be inductive. A spiral wire or the like: a conductive layer: one end of the conductive layer is connected to one of the spiral wires, and the other end of the conductive layer is connected to the ground. 9. A spiral inductor element having a multilayer structure, comprising: An insulating layer disposed on a substrate; a spiral wire disposed in the insulating layer and having a heart # τ tit stacked layer structure corresponding to the m _ spiral wire: (d) and the four layers of the material stack are electrically connected to each other, wherein η is not greater than m, and each stacked layer structure comprises: - a plurality of conductive layers; and a plurality of conductive plugs electrically connecting the spiral wires to the layer; The number of layers of the conductive layer corresponding to the outermost and innermost turns of the spiral wire is different, and the stacked layer cover having the largest number of conductive layers is connected to a ground end. 曰,, '°#; 10. The spiral inductor element having a multilayer structure according to claim 9, wherein the spiral wire has a round shape, a rectangular shape, a hexagonal octagonal shape, or a polygonal type. The spiral-expanding inductance element having a multi-layer structure according to the ninth aspect of the invention, wherein the thickness of the spiral wire is greater than a layer of the conductive layer to the first layer. 12. The multi-layer structure is as described in claim 9 A spiral inductor element, wherein the line width of the spiral wire is substantially the same as the conductive layer 疋Client's Docket No. . VIT06-0124/2007-01-24 TT's Docket No:0608-A40974-TW/fmal/王琮郁/ 16 1330879 雷Please refer to item 9 of the patent scope The spiral-inductive element having a multi-layer structure, the t corresponding to the spiral wire, each of the conductive layers is increased from the inner to the outer side. 曰M. If the application is for the hometown (4), the spiral of the layer structure The sense element 'shoots the corresponding _ spin wire the lightest scale conductive layer has the most layers. The spiral inductor element having a multilayer structure according to claim 14, wherein an end of the outermost turn of the spiral wire and a corresponding end of the conductive layer below are connected to the ground. The spiral inductor element having a multilayer structure according to claim 9, wherein the number of the layers of the conductive layer corresponding to each turn of the spiral wire is increased from the outer turn to the inner turn. 17. The spiral inductor element having a multilayer structure according to claim 9, wherein the number of the conductive layers corresponding to the innermost turn of the spiral wire is the largest. [18] The method of claim 17, wherein the corresponding end of the conductive layer at the innermost end of the spiral wire is connected to the ground. Below the taste of the Client's Docket No.:VIT06-0124/2007-01-24 TT’s Docket No:0608-A40974-TW/fmal/王琮郁 / 17