1329791 . 九、發明說明 【發明所屬之技術領域】 本發明係有關於一種表面聲波射頻識別標籤（SAW-based RFID tag )之製造方法，特別是有關於一種利用微奈米壓印技 . 術來製作表面聲波射頻識別標籤之製造方法。 【先前技術】 • RFID 是英文"Radi〇 Frequency Identification"的縮 _ 寫’中文稱為無線射頻身份識別、感應式電子芯片或是近 接卡、感應卡、非接觸卡…等等，是一種非接觸式自動識 別技術的一種。典型的RFID係由電子標籤（Tag )、讀寫 * 器（Read/Write Device)以及數據交換、管理系统統等組 成。電子標籤也稱射頻卡’它具有智能讀寫及加密通信的 能力。讀寫器由無線收發模塊、天線、控制模塊及界面電 路等組成。近年來隨著其核心技術的不斷發展和成熟，已 經越來越多的應用在包括物流、安防、防係等不同的應用 鲁 領域。 ' 由於RFID被列為本世紀十大重要技術項目之一，所 以世界各國無不全力發展，由一些統計數字來說明，在過 去十年中’即有六千多種的關於RFID技術的專利申請。 目前RFID之技術區分為低頻系統與高頻系統，其原 理簡單來說即是將電路裝在未通電（或稱為被動式）之標 籤上，當讀取機從一段距離外間歇發射出能量給標籤時， 致使標籤上之電路被導通，即與讀取機做資訊的轉換；然 6 1329791 而高頻系統與低頻系統的差異在於致 低，其以U.56MHZ作為分野，| 運作頻率的同 有不同；在低頻系統，主要是刺田μ “勖原理也略 以磁電效應，誘發產生雷、土 * ^ 丄 乂變磁％ 方I座生電流進入電容中，隨 中的電荷累積因而達到桿 口马此電谷 咬』稞籤上的低限電壓而啟 路’進而傳送出識別碼“〜戴之電 “丨μ甘對於同頻系統，其與低頻系統的 差別在於其不而要線圈的結構， 傅八疋和用標轂内的環形耦 極天線，接收高頻電磁波所發出的電場，.繼而導至電容中 儲存電荷’待所累積之電荷達到標籤中電路之啟動電壓 時’即可作訊息之轉換；在高頻系統中，由於其能量較強， 故可以作較遠的標籤資料接收。 RFID應用範圍相當廣泛，諸如門禁管制、回收資產、 貨物管理、物料處理、廢物處理、醫療應用、防盜應用、 動物監控等，故其生產的成本被預估必須降低至數美元以 下甚至必/頁降至美元才能符合所有商品使用。但是現 今RFH)的製造方法都是使用傳統的微影蝕刻技術來製 作，故絕對無法達到如此低的製作成本。 【發明内容】 因此，非常需要一種改進之RFID的製造方法，來解決 習知之RFID的製造方法所造成之製作成本太高的問題，以 達到降低RFID之生產成本的目的。 本發明之一方面係在於提供—種以微奈米壓印技術製作 表面聲波射頻識別標籤之方法，藉由利用微奈米壓印技術之 7 1329791 . * 製程簡單與快速的特性，可大量快速地生產應用於RFID之表 面聲波射頻識別標籤，因而大幅降低生產製造的時間與成 本，如此就可解決RFID之製造成本過高的問題。 本發明之另一方面係在於提供一種微奈米壓印製程方 法’藉由增加一緩衝層於硬質基板之下，以提供硬質基板在 觉外力作用時的緩衝作用，如此就可解決硬質基板在受外力 作用時所可能造成破裂的問題。 ’ 根據本發明之一最佳實施例’此微奈米壓印製程方法至 齡少包含提供一硬質基板，其中硬質基板係至少包含第一表面 以及相對於第一表面之第二表面；提供一緩衝層，其中緩衝 層係設置於第二表面上；形成一高分子材料層於第一表面 • 上；執行一壓印步驟，以形成一壓印圖案於高分子材料層上； .形成一金屬層於第一表面上；移除高分子材料層；以及移除 緩衝層。 依照本發明之較佳實施例，上述之緩衝層可例如是電子 級膠帶（Blue tape)或紫外線照射膠帶（uv tape)。 | 依照本發明之較佳實施例，上述之硬質基板可例如是鈮 酸鋰（UNb〇3)、鈕酸鋰（LiTa03)、石英（Quartz)或氮化 鋁（A1N) 依照本發明之較佳實施例，上述之高分子材料層可例如 是熱可塑性兩分子材料或照光可聚合材料。 ,應用上述之微奈米壓印製程方法，由於是藉由增加一缓 衝層於硬質基板之下’然後利用此緩衝層來提供硬質基板在 文外力作用時的緩衝作用，如此就可解決硬質基板在受外力 8 1329791 作用時所可·台t_j_、2 印製程相[ b坆成破裂的問題。所以本發明與其它習知之壓 風險，本發明所用的方法不僅可減少硬質基板破裂的 明將微太：大^降低製造的時間、能源及成本。另外，本發1329791 . IX. Description of the Invention [Technical Fields of the Invention] The present invention relates to a method for manufacturing a surface acoustic wave radio frequency identification tag (SAW-based RFID tag), and more particularly to a method for utilizing micro-nano imprinting technology. A method of manufacturing a surface acoustic wave radio frequency identification tag. [Prior Art] • RFID is English"Radi〇Frequency Identification" shrinking_writing 'Chinese is called radio frequency identification, inductive electronic chip or proximity card, proximity card, contactless card, etc., is a kind of non- A type of contact automatic identification technology. A typical RFID system consists of an electronic tag (Tag), a read/write device (Read/Write Device), and a data exchange and management system. Electronic tags, also known as RF cards, have the ability to intelligently read and write and encrypt communications. The reader is composed of a wireless transceiver module, an antenna, a control module, and an interface circuit. In recent years, with the continuous development and maturity of its core technologies, it has been applied more and more in various fields including logistics, security, and defense. Since RFID has been listed as one of the ten major technological projects of this century, all countries in the world have developed with all their strengths. Some statistics show that there have been more than 6,000 patent applications for RFID technology in the past decade. . At present, the technology of RFID is divided into a low-frequency system and a high-frequency system. The principle is simply that the circuit is mounted on a non-energized (or passive) tag, and the reader intermittently emits energy to the tag from a distance. When the circuit on the tag is turned on, that is, the information is converted with the reader; the difference between the high frequency system and the low frequency system is 6 1329791, and the U.56MHZ is used as the field, | Different; in the low-frequency system, mainly the thorn field μ "勖 principle is also slightly magnetoelectric effect, induced to produce thunder, soil * ^ 丄乂 change magnetic % square I current into the capacitor, with the accumulation of charge to reach the rod The horse's electric valley bites the 低 sign on the low-limit voltage and starts the road' and then transmits the identification code "~戴之电" 丨μ甘 for the same-frequency system, the difference with the low-frequency system is that it does not have the structure of the coil Fu Biao and the ring-shaped coupling antenna in the standard hub receive the electric field generated by the high-frequency electromagnetic wave, and then lead to the capacitor to store the charge 'when the accumulated charge reaches the starting voltage of the circuit in the tag' In the high-frequency system, because of its high energy, it can be used for remote label data reception. RFID applications are quite extensive, such as access control, recycling assets, cargo management, material handling, waste disposal, medical treatment. Applications, anti-theft applications, animal monitoring, etc., so the cost of production must be reduced to a few dollars or even / page down to the dollar to meet all commodity use. But today's RFH) manufacturing methods are using traditional lithography With the etching technology, it is absolutely impossible to achieve such a low manufacturing cost. [Invention] Therefore, there is a great need for an improved RFID manufacturing method to solve the problem that the manufacturing cost caused by the conventional RFID manufacturing method is too high. To achieve the purpose of reducing the production cost of RFID. One aspect of the present invention is to provide a method for fabricating surface acoustic wave radio frequency identification tags by micronanoimprint technology, by using micro-nano imprint technology 7 1329791 . Simple and fast features for mass and rapid production of surface acoustic wave radio frequency identification for RFID Therefore, the time and cost of manufacturing are greatly reduced, so that the problem of excessive manufacturing cost of RFID can be solved. Another aspect of the present invention is to provide a micro-nano imprint process method by adding a buffer layer to the hard Under the substrate, to provide a buffering action of the hard substrate under the action of an external force, the problem that the hard substrate may be broken when subjected to an external force can be solved. 'This micro-in accordance with a preferred embodiment of the present invention' The embossing process includes providing a rigid substrate, wherein the rigid substrate comprises at least a first surface and a second surface opposite to the first surface; providing a buffer layer, wherein the buffer layer is disposed on the second surface; forming a polymer material layer on the first surface; an embossing step to form an embossed pattern on the polymer material layer; forming a metal layer on the first surface; removing the polymer material layer; Remove the buffer layer. In accordance with a preferred embodiment of the present invention, the buffer layer may be, for example, a blue tape or a uv tape. According to a preferred embodiment of the present invention, the hard substrate may be, for example, lithium niobate (UNb〇3), lithium nitrite (LiTa03), quartz (Quartz) or aluminum nitride (A1N). In the embodiment, the polymer material layer may be, for example, a thermoplastic two-molecular material or an illuminating polymerizable material. Applying the above-described micro-nano imprint process method, since the buffer layer is provided under the hard substrate by adding a buffer layer, and then the buffer layer is used to provide a buffering effect of the hard substrate when the external force acts, so that the hard surface can be solved. When the substrate is subjected to an external force of 8 1329791, the t_j_, 2 printing process phase [b坆 becomes a problem of cracking. Therefore, the present invention and other conventional pressure risks, the method used in the present invention not only reduces the breakdown of the rigid substrate, but also reduces the time, energy and cost of manufacturing. In addition, this hair
$別〆！·只壓印製程方法應用於製造rfid之表面聲波射頻 識別標籤，π -Γ » θ . A ., —可大置快速地生產表面聲波射頻識別標籤， 更可大幅降低RFID之製造成本。 【實施方式】 /同時參閱第i圖與第2A圖至第2E圖係分別繪示 本發月之較佳實施例之微奈米壓印製程方法的流程圖與利 用此方去來製作電子元件的流程剖面示意目。在本實施例 中此電子疋件係為表面聲波射頻識別標籤（sAW-based RFm tag )’限於此，其他的電子元件也可以應用此方法 來製卞在本發明之微奈米壓印製程方法中，包含有提供一 質'^板1〇〇、k供一緩衝層no、形成一高分子材料層12〇、 執行壓印步驟130、實施一蝕刻步驟14〇、形成一金屬層15〇 以及移除高分子材料層160等步驟。首先，如第i圖與第2A 圖所示，先進行「提供一硬質基板」100，其中此硬質基板200 係至少包含第一表面2〇2以及相對於第一表面2〇2之第二表 面204。在本實施例中，此硬質基板2〇〇的材質係為鈮酸鋰 (LiNb03 )，然不限於此，其他硬質的壓電材料，例如钽酸鋰 (LiTa03 )、石英（Quartz )與氮化鋁（A1N )也可以使用。 接著’進行「提供一緩衝層」110，此緩衝層21〇例如是應用 於黏貼晶圓之電子級穆帶（Blue tape )或紫外線照射踢帶（uv 9 1329791 taPe)’並將此緩衝層21〇設置於硬質基板2〇〇之第二表面2⑽ j，當該硬質基板200之第一表面2〇2受外力作用時，藉以 提=一定的緩衝作用給硬質基板2〇〇，來防止硬質基板2〇〇在 製程中可能產生的破裂情形。在本實施例中，此緩衝層21〇 ，貼0於硬質基板200之第二表面204後，再將緩衝層21〇設 置於基座220上，如第2B圖所示，此基座220除了有支撐 -硬質基板200的功能外，還另外具有加熱硬質基板2〇〇之功 .能’例如是熱墊板。之後，如第i圖與第2B圖所示，進行「形 •成一高分子材料層」120，其係利用旋轉塗佈法（Spin coating) 以形成一高分子材料層23〇於該硬質基板2〇〇之第一表面2〇2 上。在本實施例中，此高分子材料層230之厚度大約為 • 180nm，且其材質係選用熱可塑性高分子材料（或稱加熱型高 •分子材料），例如聚曱基丙烯酸甲酯（PMMA )，然不限於此， 其他的高分子材料例如照光可聚合材料（或稱紫外光型高分 子材料）也可以使用。另外，形成此高分子材料層23〇的方 法除了旋轉塗佈法外，其他的塗佈方法，例如印刷（Printing )、 # 滾輪塗佈（RoUer coating )以及喷灑塗佈（Spray c〇ating )等 . 也可以使用。然後，如第1圖與第2C圖所示，進行「執行一 壓印步驟」130’以形成一壓印圖案23 2於該高分子材料層23 0 上。在本實施例中，此壓印步驟首先係提供一壓印模板24〇， 其t此壓印模板240之表面上係具有微結構之圖案242，且壓 印模板240係可為軟質可透光、硬質可透光或硬質不透光之 模板’例如聚二甲基矽氧烷（PDMS )、石英或矽晶片等。值 得一提的是’壓印模板240之材質為聚二甲基矽氧烷者係可 1329791 適用於壓印加熱型高分子材料或紫外光型高分子材料。在本 實施例中，此壓印模板240之材質係選用聚二甲基矽氧烷。 接著，在利用此壓印模板240進行壓印前，較佳是先對^印 模板240進行脫模處理。壓印模板24〇之脫模處理的步驟I 至少包含首先去除壓印模板240上之雜質與水氣。隨後，將 壓印模板240浸入低表面活性離形劑之溶液中，藉以對壓印 模板240之表面進行改質處理，以利壓印模板24〇於壓印結 束後能輕易地與高分子材料層23〇離形，以形成完整的圖 轉印。完成壓印模板240表面之脫模處理後，即可將壓印模 板240壓入至高分子材料層23〇中。值得一提的是，在本實 施例中，由於此高分子材料層23〇係使用熱可塑性高分子材 料，所以會在麗印模板240壓入至高分子材料層23〇之前先 利用基座220對高分子材料層23〇進行一加熱步驟，以使高 分子材料層230超過其玻璃轉化溫度（Tg)，之後才將壓印模板 240下壓至尚分子材料層23〇中，以將壓印模板之圖案 242轉印至高分子材料層23〇。在本實施例中，此加熱步驟的 加熱溫度大約為150至20(rc之間，施加的壓力大約為3〇至 5〇kgw之間，施加的時間大約3〇分鐘。然後，移去熱源，待 基座220與尚分子材料層23〇降溫冷卻後進行離形動作將 壓印模板240從高分子材料層23〇中移開，即可得到與壓印 換板240之圖案242互補之壓印圖案232於高分子材料層23〇 上。可以理解的是’當此高分子材料層230係使用照光可聚 合材料時’則不需要進行上述之加熱步驟，就可直接將壓印 模板240壓入至高分子材料層23〇中以將壓印模板24〇之 1329791 圖案242轉印至高分子材料層23〇，然後，進行一曝光硬化步 驟’待高分子材料層230硬化後才將壓印模板242從高分子 材料層230上移開，即可得到與壓印模板240之圖案242互 補之壓印圖案23 2於高分子材料層230上❶由於本發明在硬 .質基板20〇與基座220之間多了一層緩衝層21〇，此缓衝層 • 210係可吸收壓印模板24〇在壓入至高分子材料層23〇時對硬 質基板200所產生之衝擊能量，因此可防止硬質基板2〇〇產 '主破裂。值得一提的是，當執行完壓印步驟後，由於壓印圖 _案232已形成於高分子材料層230上，此時緩衝層21〇所提 供的功能已作用完畢，因此，在此步驟13〇中，更可至少包 含移除此緩衝層210，以利後續的製程處理，然不限於此，移 •除此緩衝層210也可以是在後續製程步驟140、15〇或16〇中 •實施，且移除此緩衝層210的方法例如是以紫外光照射或顯 影液浸泡的方式來去除。接著，如第丨圖與第2D圖所示，進 行「實施一蝕刻步驟」14〇,以修飾高分子材料層23〇上的壓 印圖案232，來防止在壓印步驟中可能有部分高分子材料層 • 230殘留在壓印圖案232中，值得一提的是，此步驟係可視高 .分子材料層230殘留在壓印圖案232中的情況來決定是否要 加以實施。在本實施例中，係利用氧電漿反應式離子乾式蝕 刻的方式（〇2_RIE)來進行殘留物之清除。然後，如第！圖 與第2E圖所示’進行「形成一金屬層」15〇，其係以賤鑛法 形成一金屬層250於該硬質基板200之第一表面2〇2上其 中一部份之金屬層250係填入壓印圖案232中以形成第一金 屬圖案層250a’另一部份之金屬層25〇係沉積於高分子材料 12 1329791 層230上以形成第二金屬圖案層25〇b。值得一提的是，由於 係使用物理氣相沉積法，所以第一金屬圖案層25〇a與第二金 屬圖案層250b之間並沒有連接。在本實施例令，此金屬層25〇 之材質係為鋁，然不限於此，其他金屬材料也可以使用β接 *著，如第1圖與第2F圖所示，進行「移除高分子材料層」160, 以形成第一金屬圖案層250a於該硬質基板2〇〇之第一表面 2〇2上，由於第二金屬圖案層25〇b係位於高分子材料層 '上’所以當移除高分子材料層230時，只會留下第一金屬圖 >案層250a於該硬質基板200上。在本實施例中，係使用舉離 法（Uft-off)的技術來移除高分子材料層23〇,此第一金屬 圖案層250a係為指又狀電極（IDT)，且其厚度大約為3〇nm。 如此，即完成本發明之以微奈米壓印製程技術方法所製作之 表面聲波射頻識別標籤。 簡言之，本發明之微奈米壓印製程方法，其特徵在於加 入一緩衝層於硬質基板下，藉以提供硬質基板在受外力作用 時有一定的緩衝作用，來防止硬質基板在製程中所可能產生 •的破裂情形。綜上所述，本發明與其它習知之壓印製程相比， 本發明所用的微奈米壓印製程方法不僅解決了硬質基板容易 破裂的問題，提昇製程的良率，更可減少製造所需花費的能 源、時間和成本。此外，本發明之微奈米壓印技術之製程具 有簡單與快速的特性，故應用於製造RFID之表面聲波射頻識 別標籤時，將可大幅降低RFID之製造成本。 由上述本發明較佳實施例可知’應用本發明之微奈米壓 印製程方法’其優點在於僅需藉由加入一緩衝層於硬質基板 13 下’即可達到降低硬質基板在製程中所可能產生之破裂情形 的目的。如此一來，本發明之微奈米壓印製程方法不僅解決 I知壓印製程之硬質基板容易破裂的問題，更大幅降低製造 的時間、能源及成本。另外，應用本發明之微奈米壓印技術 製作表面聲波射頻識別標籤之方法，可大量快速地生產應用 於RFID之表面聲波射頻識別標籤，因而大幅降低生產製造的 時間與成本，如此就可解決rFID之製造成本過高的問題。 雖然本發明已以數個較佳實施例揭露如上，然其並非用 以限定本發明，任何熟習此技藝者，在不脫離本發明之精神 和範圍内，當可作各種之更動與潤飾，因此本發明之保護範 圍當視後附之申請專利範圍所界定者為準。 【圖式簡單說明】 為讓本發明之上述和其他目的、特徵、和優點能更明顯 易懂’下文特舉一較佳實施例，並配合所附圖式，作詳細說 明如下： 第1圖係繪示根據本發明之一較佳實施例之微奈米壓印 製程方法的流程圖；以及 第2A圖至第2F圖係繪示利用第1圖之方法來製作電子 元件的流程剖面示意圖。 【主要元件符號說明】 100:提供一硬質基板 110 :提供一緩衝層 1329791 120 :形成一高分子材料層 130 :執行一壓印步驟 140 :實施一蝕刻步驟 150:形成一金屬層 160 :移除高分子材料層 200 :硬質基板 202 :第一表面 204 :第二表面 210 :緩衝層 220 :基座 230 :高分子材料層 232 :壓印圖案 240 :壓印模板 242 :圖案 250 :金屬層 250a :第一金屬圖案層 250b :第二金屬圖案層 15Don't worry! ·Only the imprint process method is applied to the surface acoustic wave radio frequency identification tag of rfid, π -Γ » θ . A., - The surface acoustic wave radio frequency identification tag can be produced quickly and greatly, and the manufacturing cost of RFID can be greatly reduced. [Embodiment] Referring to FIG. 1 and FIG. 2A to FIG. 2E, respectively, a flow chart of a micro-nanoimprint process method of a preferred embodiment of the present month is shown, and an electronic component is manufactured by using the same. The flow profile is shown. In this embodiment, the electronic component is a surface acoustic wave radio frequency identification tag (sAW-based RFm tag), and other electronic components can also be applied to the micro-nano imprint process method of the present invention. The method includes providing a quality layer 1 , k for a buffer layer no, forming a polymer material layer 12 , performing an imprint step 130 , performing an etching step 14 , forming a metal layer 15 , and The step of removing the polymer material layer 160 and the like. First, as shown in FIG. 1 and FIG. 2A, a “providing a rigid substrate” 100 is first performed, wherein the rigid substrate 200 includes at least a first surface 2〇2 and a second surface relative to the first surface 2〇2. 204. In the present embodiment, the material of the hard substrate 2 is lithium niobate (LiNb03), but is not limited thereto, and other hard piezoelectric materials such as lithium tantalate (LiTa03), quartz (Quartz) and nitride Aluminum (A1N) can also be used. Then, 'provide a "providing a buffer layer" 110, for example, an electronic grade blue tape or an ultraviolet irradiation kick band (uv 9 1329791 taPe) applied to the attached wafer and the buffer layer 21 〇 is disposed on the second surface 2 (10) j of the hard substrate 2, and when the first surface 2〇2 of the hard substrate 200 is subjected to an external force, the hard substrate 2 is prevented from being added to the hard substrate 2 to prevent the hard substrate. 2 rupture that may occur during the process. In this embodiment, the buffer layer 21 is disposed on the second surface 204 of the rigid substrate 200, and then the buffer layer 21 is disposed on the pedestal 220. As shown in FIG. 2B, the pedestal 220 is In addition to the function of the support-hard substrate 200, it additionally has the function of heating the hard substrate 2, such as a thermal pad. Thereafter, as shown in FIG. 1 and FIG. 2B, a "shaped polymer layer" 120 is formed by spin coating to form a polymer material layer 23 on the hard substrate 2 The first surface of the crucible is 2〇2. In this embodiment, the thickness of the polymer material layer 230 is about 180 nm, and the material is made of a thermoplastic polymer material (or a high-molecular material), such as polymethyl methacrylate (PMMA). However, it is not limited thereto, and other polymer materials such as an illuminating polymerizable material (or an ultraviolet type polymer material) may be used. Further, in addition to the spin coating method, other methods of forming the polymer material layer 23 are, for example, printing, #RoUer coating, and spray coating (Spray c〇ating). Etc. Can also be used. Then, as shown in Figs. 1 and 2C, an "execution of an imprinting step" 130' is performed to form an imprint pattern 23 2 on the polymer material layer 23 0 . In this embodiment, the imprinting step first provides an imprint template 24, wherein the imprint template 240 has a microstructured pattern 242 on the surface thereof, and the imprint template 240 is soft and transparent. A hard opaque or hard opaque template such as polydimethyl siloxane (PDMS), quartz or germanium wafers. It is worth mentioning that the material of the imprint template 240 is polydimethyl methoxy hydride. 1329791 is suitable for embossing heating type polymer materials or ultraviolet light type polymer materials. In this embodiment, the material of the imprint template 240 is selected from polydimethylsiloxane. Next, before the imprinting using the imprint template 240, it is preferable to perform the mold release treatment on the stamp template 240. The step I of the embossing of the embossing template 24 至少 at least includes first removing impurities and moisture from the embossing template 240. Subsequently, the imprint template 240 is immersed in the solution of the low surface active release agent, thereby modifying the surface of the imprint template 240, so that the imprint template 24 can be easily combined with the polymer material after the end of the imprinting. Layer 23 is detached to form a complete transfer of the image. After the release treatment of the surface of the imprint template 240 is completed, the imprint template 240 can be pressed into the polymer material layer 23A. It should be noted that, in this embodiment, since the polymer material layer 23 is made of a thermoplastic polymer material, the susceptor 220 is used before the lithographic template 240 is pressed into the polymer material layer 23〇. The polymer material layer 23 is subjected to a heating step such that the polymer material layer 230 exceeds its glass transition temperature (Tg), and then the imprint template 240 is pressed down into the layer 23 of the molecular material layer to imprint the template. The pattern 242 is transferred to the polymer material layer 23A. In this embodiment, the heating step of the heating step is about 150 to 20 (between rc, the applied pressure is between about 3 Torr and 5 〇 kgw, and the application time is about 3 〇 minutes. Then, the heat source is removed, After the susceptor 220 and the molecular material layer 23 are cooled and cooled, the embossing template 240 is removed from the polymer material layer 23, and the embossing complementary to the pattern 242 of the embossing plate 240 is obtained. The pattern 232 is on the polymer material layer 23. It can be understood that 'when the polymer material layer 230 is used as the photopolymerizable material', the imprint template 240 can be directly pressed without the above heating step. To the polymer material layer 23, the 1329791 pattern 242 of the imprint template 24 is transferred to the polymer material layer 23, and then an exposure hardening step is performed. After the polymer material layer 230 is hardened, the imprint template 242 is removed. The polymer material layer 230 is removed, and an embossed pattern 23 2 complementary to the pattern 242 of the imprint template 240 is obtained on the polymer material layer 230. Due to the present invention, the hard substrate 22 and the pedestal 220 are There is a buffer layer 21 between them. The buffer layer 210 can absorb the impact energy generated by the imprint template 24 on the hard substrate 200 when pressed into the polymer material layer 23, thereby preventing the hard substrate 2 from producing a main crack. It is worth mentioning After the embossing step is performed, since the embossing pattern 232 has been formed on the polymer material layer 230, the function provided by the buffer layer 21 已 has been completed, and therefore, in this step 13 In addition, the buffer layer 210 may be removed to facilitate subsequent processing, but is not limited thereto. The buffer layer 210 may also be implemented in subsequent processing steps 140, 15 or 16 The method of removing the buffer layer 210 is, for example, removed by ultraviolet light irradiation or developer immersion. Then, as shown in FIG. 2 and FIG. 2D, "implementing an etching step" is performed to modify the polymer. The embossed pattern 232 on the material layer 23 is used to prevent a portion of the polymer material layer 230 from remaining in the embossed pattern 232 during the imprinting step. It is worth mentioning that this step is visible as a high molecular layer. 230 remains in the embossed pattern 232 In this case, it is decided whether or not to carry out the implementation. In the present embodiment, the residue is removed by means of an oxygen plasma reactive ion dry etching method (〇2_RIE). Then, as shown in Fig. 2 and Fig. 2E' And forming a metal layer 250 on the first surface 2〇2 of the hard substrate 200, wherein a portion of the metal layer 250 is filled in the embossed pattern 232. The metal layer 25 forming the other portion of the first metal pattern layer 250a' is deposited on the layer 230 of the polymer material 12 1329791 to form the second metal pattern layer 25 〇 b. It is worth mentioning that The vapor deposition method is such that there is no connection between the first metal pattern layer 25A and the second metal pattern layer 250b. In this embodiment, the material of the metal layer 25 is aluminum, but it is not limited thereto, and other metal materials may also be connected with β, as shown in FIG. 1 and FIG. 2F, a material layer 160 to form a first metal pattern layer 250a on the first surface 2〇2 of the hard substrate 2〇〇, since the second metal pattern layer 25〇b is located on the polymer material layer’ When the polymer material layer 230 is removed, only the first metal pattern > the layer 250a is left on the hard substrate 200. In the present embodiment, the Uft-off technique is used to remove the polymer material layer 23, which is referred to as a re-electrode (IDT), and has a thickness of approximately 3〇nm. Thus, the surface acoustic wave radio frequency identification tag produced by the micro-nano imprint process technology of the present invention is completed. Briefly, the micro-nanoimprint process method of the present invention is characterized in that a buffer layer is added under the hard substrate to provide a hard substrate to have a buffering effect when subjected to an external force to prevent the hard substrate from being processed in the process. A rupture that may occur. In summary, the micro-nanoimprint process method used in the present invention not only solves the problem that the hard substrate is easily broken, but also improves the yield of the process, and reduces the manufacturing requirements, compared with other conventional imprint processes. Energy, time and cost. In addition, the process of the micro-nano imprinting technique of the present invention has simple and rapid characteristics, so that when it is applied to the surface acoustic wave radio frequency identification tag of RFID, the manufacturing cost of the RFID can be greatly reduced. It can be seen from the above preferred embodiment of the present invention that the micro-nano imprint process method of the present invention has the advantage that it is only necessary to reduce the hard substrate in the process by adding a buffer layer under the hard substrate 13 The purpose of the resulting rupture. In this way, the micro-nanoimprinting process of the present invention not only solves the problem that the hard substrate of the imprinting process is easily broken, but also greatly reduces the manufacturing time, energy and cost. In addition, the method for fabricating the surface acoustic wave radio frequency identification tag by applying the micro-nano imprint technology of the invention can rapidly and rapidly produce the surface acoustic wave radio frequency identification tag applied to the RFID, thereby greatly reducing the time and cost of manufacturing, so that the solution can be solved. The manufacturing cost of rFID is too high. While the invention has been described above in terms of several preferred embodiments, it is not intended to limit the invention, and the invention may be modified and modified without departing from the spirit and scope of the invention. The scope of the invention is defined by the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS The above and other objects, features, and advantages of the present invention will become more <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; A flowchart of a micro-nanoimprinting process according to a preferred embodiment of the present invention; and FIGS. 2A to 2F are schematic cross-sectional views showing the process of fabricating an electronic component by the method of FIG. 1. [Main component symbol description] 100: providing a rigid substrate 110: providing a buffer layer 1329791 120: forming a polymer material layer 130: performing an imprinting step 140: performing an etching step 150: forming a metal layer 160: removing Polymer material layer 200: rigid substrate 202: first surface 204: second surface 210: buffer layer 220: susceptor 230: polymer material layer 232: embossed pattern 240: embossing template 242: pattern 250: metal layer 250a : first metal pattern layer 250b : second metal pattern layer 15