1329772 17030twf.doc/g 九、發明說明： 【發明所屬之技術領域】 • 本發明是有關於一種主動元件陣列基板及其修補方 法’且特別是有關於一種能改善液晶顯示面板之顯示品質 的主動元件陣列基板及其修補方法。 【先前技術】 早期以陰極射線管(cathode ray tube，CRT)製造的顯示 裝置具有體積大、重量重、輻射量高及晝質較差等缺點， 籲 因此新的平面顯示技術便不斷被開發出。這些新開發出的 平面顯示器具有輕薄、省電、低輻射、全彩等優點，包括 液晶顯示器（liquid crystal display，LCD)、電漿顯示器 . (plasma出柳pane卜PDP)、有機電致發光顯示器(〇rganic dectroluminescent display ’ OELD)等。其中，這些新開發 ^ 出的平面顯示器裡，又以液晶顯示器最為普遍，技術最為 成熟，舉凡手機、數位相機、筆記型電腦、液晶電視等都 有其應用範圍。一般而言，液晶顯示器主要包括一液晶顯 # $面板與—背光模組。液晶顯示面板主要包括-薄膜電晶 體陣列基板與一彩色濾光基板。1329772 17030twf.doc/g IX. Description of the Invention: [Technical Field of the Invention] The present invention relates to an active device array substrate and a repair method thereof, and particularly relates to an initiative for improving the display quality of a liquid crystal display panel. Component array substrate and repair method thereof. [Prior Art] Early display devices made of cathode ray tubes (CRTs) have the disadvantages of large volume, heavy weight, high radiation, and poor quality, and new planar display technologies have been continuously developed. These newly developed flat-panel displays have the advantages of lightness, power saving, low radiation, full color, etc., including liquid crystal display (LCD), plasma display. (plasma willow PDP), organic electroluminescent display (〇rganic dectroluminescent display ' OELD) and so on. Among them, these newly developed flat-panel displays are the most common in liquid crystal displays, and the technology is the most mature. Mobile phones, digital cameras, notebook computers, and LCD TVs all have their applications. In general, a liquid crystal display mainly includes a liquid crystal display panel and a backlight module. The liquid crystal display panel mainly comprises a thin film electric crystal array substrate and a color filter substrate.
圖1A繪示習知一薄膜電晶體陣列基板的結構示意 > ®。圖⑽會示圖1A之薄膜電晶體陣列基板沿剖面線A 的面示思圖，而圖2八繪示利用圖j A之薄膜電晶體陣列 基板製成的液晶顯示面板之結構示意圖。請先同時參照圖 1A與圖1B，薄膜電晶體陣列基板1〇〇包括一玻璃基板 . U〇、户條掃瞄配線丨2〇、多條資料配線13〇、多個畫 1329772 17030twf.doc/g 素單元140以及至少一修補線15〇(如圖2A所示）。 其中，掃瞄配線120、資料配線130、晝素單元140 以及修補線150皆配置於玻璃基板110上，且晝素單 元140與對應的掃猫配線12〇及資料配線13〇電性相 連’而每一畫素單元140包括一薄膜電晶體142以及 一透明導電電極（例如銦錫氧化物（indiurn tin oxide， ITO))144。 薄膜電晶體陣列基’板100在製造的過程之中難免會產 生一些斷線瑕疵。這些斷線瑕疵可藉由陣列測試(array test) 製程檢測出’並可在修補製程中以雷射化學氣相沈積法 (laser chemical vapor deposition，laser CVD)將其修復。然 而並非所有的斷線瑕疵都適用雷射化學氣相沉積法來修 補。例如使用低介電絕緣層的高開口率製程或當斷線瑕疵 是在組成液晶盒(cell)後才檢測到等情況。 資料配線130與透明導電電極144之間的雜散電容Cpd (Capacitance between pixel and data line)，是影響開 口率的 主要因素之一，當雜散電容Cpd的效應過大時，透明導電 電極144上所保持的電荷，容易受相鄰資料配線13〇影響， 而產生串音(cross talk)效應。為減少雜散電容Cpd效應並增 加開口率，已有許多種方法被研究，其中一種方法是在資 料配線130與透明導電電極144之間加一層低介電係數的 絕緣層（insulator layer)(未繪示），此絕緣層介電係數 (dielectric constant)為3·5時在資料配線上的厚度約1到3 微求以上’可以讓透明導電電極144跨上資料配線13〇而 17030twf.doc/g 增加開口率。上述方法使用的低介電絕緣層（insulator layer) ’可包括有機、無機、感光(ph〇to_sensitivity)與非感 光（nonphoto-sensitivity)材料等。在製程中為有效減低雜 散電容Cpd效應’透明導電電極144與資料配線13〇之間 的絕緣層’厚度常須要1〜3微米（ym)以上，當在製程中發 生資料配線130斷線時，使用傳統正面修補的方式，必須 挖穿1〜3微米（//m)厚的絕緣層，才能修補斷路的資料配線 130,因此容易在修補的’過程中產生其他的缺陷，影響到修 補位置鄰近透明導電電極144的正常顯示。 此外’當斷線瑕疵是在薄膜電晶體基板1〇〇與彩色濾 光基板(未繪示）組立，並注入液晶（未繪示）後才檢測到時， 由於斷線發生的薄膜電晶體矩陣(TFT array)端已被包覆在 整個液晶盒(cell)中，因此並不能用電射化學氣相沈積法在 斷線的上方做修補，為了避免在液晶顯示面板(未繪示）上 形成亮線，有另外的修補方式是藉由薄膜電晶體陣列基板 100的修補線150將液晶顯示面板修復。 請參照圖2A ’液晶顯示面板200係以上述之薄膜電 晶體陣列基板100製成，且具有多條掃瞄配線〗2〇、多條 資料配線130以及一修補線150。當發現液晶顯示面板2〇〇 有斷線的瑕疵時，就必須藉由修補線15〇進行修補。舉例 而5 ’當在液晶顯示面板200上檢測到一受損的資料配線 130時’可分別在熔接點150a與150b以雷射熔接修補線 150與此受損的資料配線130,使此受損的資料配線ι3〇 可經由修補線150而恢復大部分的功能。 17030twf.doc/g 然而，由於液晶顯示面板200的修補線i5〇通常有數 量的限制’所以能修復斷裂的資料配線130數就有所限 制，當出現多條以上的斷線瑕疵或是一條資料配線130上 有兩處以上的斷點時，液晶顯示面板2〇〇就無法修復，使 能修復的斷線瑕疵之數目受到限制。此外，面板的尺寸越 來越大，修補線150的長度也越來越長，導致當訊號經過 長距離的傳遞後容易出現訊號延遲與訊號衰減的現象，致 使液晶顯示面板200的顧示晝面不佳。 【發明内容】 有鑑於上述，本發明的目的是在提供一種能改善液晶 顯示面板之顯示品質的主動元件陣列基板。 本發明的另一目的是提供一種能修復多條資料配線 斷線或單條資料配線發生兩處以上的斷路，且可避免訊號 延遲與訊號衰減的主動元件陣列基板之修補方法；同時由 於本發明可以在主動元件陣列基板的背部做修補’能減少 修補時產生的其他缺陷。 本發明提出一種主動元件陣列基板，包括一基板、多 條掃瞄配線、多條資料配線以及多個畫素單元。掃瞄配線 與資料配線皆配置於基板上，其中在任二相鄰的掃瞄配線 之間，每一資料配線具有一第一線段、一第二線段以及一 連接第一線段與第二線段之連接線段。畫素單元配置於基 板上，且分別與對應之掃瞄配線及資料配線電性相連，其 中在任二相鄰的掃瞄配線之間，每一資料配線的第一線段 與第二線段分別位於與其相鄰之二晝素單元的下方。 1329772 i7030twf.doc/g 依照本發明較佳實施例所述之主動元件陣列基板，其 • 中每一畫素單元例如包括一主動元件以及一晝素電極。畫 ； 素電極透過主動元件與對應之掃瞄配線及資料配線電性相 . 連。 依照本發明較佳實施例所述之主動元件陣列基板，其 f 巾妹二相鄰的掃聪配線之間，每-資料配線的第-線段 與第二線段分別位於與其相鄰之二晝素電極的下方。 依照本發明較佳實’施例所述之主動元件陣列基板，例 如更包括多條配置於基板上之共用配線，該共用配線係可 與該掃描配線同時在基板上形成，其中每一畫素電極與對 應之共用配線構成一儲存電容。 • 依照本發明較佳實施例所述之主動元件陣列基板，其 中晝素電極例如為一矩形電極。 舰本發·佳實施_敎主動元件陣列基板，其 中晝素電極具有二第-電極部份，分別位於一第一來考線 兩側且彼此連接，且這些第一電極部份對稱於第一來考線。 • 依照本發_佳實施例所述之主動元件陣列基板，复 , 中這些第一電極部份的形狀例如為平行四邊形。 ” ，依照本發明較佳實施例所述之主動元件‘ .t每電極部份具有二第二電極部份，分別ς於一第 工i兩側且彼此連接，且這些第二電極部份對稱於第 依照本發明較佳實施例所述之主動元件 . 中這些第二電極部份的形狀例如為平行四邊形。土板其 17030twf.doc/g 依照本發明較佳實施例所述之主動元件陣列基板，更 包括多組配置於基板上之修補線組，其中每一修補線組係 對應於其中一個連接線段，且每一修補線組例如包括一第 一修補線以及一第二修補線。第一修補線以及第二修補線 與資料配線電性絕緣，且第一修補線與第二修補線分別位 於對應之連接線段的對側，這些修補線及連接線段是在與 資料配線非同一層的金屬配線形成時一併形成的。在本發 明舉出的案例中，第一修補線、第二修補線以及連接線段 是在製作掃瞄配線時一起形成的，因此第一修補線與第二 修補線的末端分別位於對應之資料配線第一線段與第二線 段下方。 依照本發明較佳實施例所述之主動元件陣列基板，其 中在任二相鄰的掃瞄配線之間，每一資料配線旁之第一修 補線與第二修補線分別位於與其相鄰之二畫素電極的下 本發明提出一種主動元件陣列基板的修補方法，採用 雷射炫接法(laser welding)，&主動元件陣基板的背部進行 修補。修補方法包括使第-修補線的末端或第二修補線的 末端與對應之第-線段以及第二線段焊接，料料訊息能 通過修補線的連接繼續傳遞。且由於每—個晝素單元中的 資料配線都有相對應的修補線，因此可以針對每一個發生 缺陷的單元做修補。 · · 综上所述’在本發明之主動元件陣列基板中，任二相 鄰掃猫配線之間’每-資料配線的第一線段與第二線段分 17030twf.doc/g 別位於與其相鄰之二晝素電極的下方，這些畫素電極與資 料配線間隔著一層或多層，有機或非有機、感光或非感光 的絕緣層（insulator layer)，配合點反轉(dot inversion)或行 反轉(column inversion)等驅動方式後可抵銷寄生電容的效 應，以改善液晶顯示面板之顯示品質。此外，每一個晝素 單元都有對應的修補機制，可修復多條斷線，且相較於繞 越顯示區域的外圍走線修補法，本發明提出之主動元件陣 列基板的修補方法更不容易造成訊號延遲與訊號衰減。 為讓本發明之上述和其他目的、特徵和優點能更明顯 易懂’下文特舉較佳實施例，並配合所附圖式，作詳細說 明如下。 【實施方式】 第一實施例 圖3A繪示本發明第一實施例之主動元件陣列基板的 結構示意圖。圖3B、圖3C與圖3D分別繪示圖3A之主動 元件陣列基板沿剖面線a-b、c-d與e-f的剖面示意圖。請 同時參照圖3A至圖3D，本實施例之主動元件陣列基板3〇〇 包括一基板310、多條掃瞄配線320、多條資料配線330 以及多個晝素單元340。以下將針對基板310、掃瞄配線 320、資料配線330以及晝素單元340的相對位置、細部結 構以及材質作進一步之說明。 基板310例如為玻璃基板、石英基板或是其他適當材 料之基板。掃瞄配線320配置於基板310上，可為鋁合金 配線或是其他適當導電材料所形成的配線。資料配線33〇 1329772 17030twf.doc/g 配置於基板310上，可為絡金屬配線、|g合金配線或是其 他適當導電材料所形成的配線。在任二相鄰掃瞄配線32〇 之間，每一資料配線330具有一第一線段332、一第二線 段334以及一連接線段336，而連接線段336連接第一線 段332與第二線段334。畫素單元340配置於基板310上， 且分別與對應的掃瞄配線320及資料配線330電性相連， 其中在任二相鄰掃瞄配線320之間，每一資料配線330的 第一線段332與第二線:段334分別位於與此資料配線330 相鄰的二晝素單元340的下方。 在本實施例中，晝素單元340包括一主動元件342以 及一晝素電極344。主動元件342例如為一薄膜電晶體或 疋其他具有二端子的開關元件（tri-p〇lar switching device)。晝素電極344透過主動元件342與對應之掃瞄配 線320及資料配線330電性相連，此晝素電極344例如是 一透明電極(transmissive electrode)、反射電極(reflective electrode)或是半穿透半反射電極(transflective eiectr〇de)， 而畫素電極344的材質可為銦錫氧化物、銦鋅氧化物 (indium zinc oxide，IZ0)、金屬或是其他透明或不透明之導 電材料。此外’在任二相鄰掃瞄配線320之間，每一資料 配線330的第一線段332與第二線段334分別位於與此資 料配線330相鄰的二晝素電極344的下方。 為使主動元件陣列基板300的資料配線330斷裂時能 夠被修復’本實施例之主動元件陣列基板300包括多組修 補線組350 ’這些修補線組340配置於基板310上。每一 12 1329772 17030twf.doc/g 修補線組340對應一個連接線段336配置，且每一修補線 組350包括一第一修補線352以及一第二修補線354。第 一修補線352與第二修補線354的材料例如為鋁合金或是 其他適當導電材料，且分別位於對應之連接線段336之對 側，而第一修補線352與第二修補線354的末端分別位於 對應之第一線段332與第二線段334下方。再者，在任二 相鄰掃瞄配線320之間’每一資料配線330旁之第一修補 線332與第二修補線334分別位於與此資料配線330相鄰 之兩晝素電極344下方。值得一提的是，第一修補線332、 第二修補線334以及連接線段336是與資料配線330不同 時形成的，第一修補線332、第二修補線334以及連接線 段336可以在製作掃猫配線320、遮光層（shielding layer)(未 繪示）或共用配線(common line)(未繪示）時一併形成。 當資料配線330之一斷裂時，可以利用修補線組35〇 的第一修補線352或第二修補線354將主動元件陣列基板 300修復。主動元件陣列基板300的修補方法是使第一修 補線352的末端或第二修補線354的末端與對應的第一線 段332以及第二線段334焊接。以下將更詳細地說明修補 的方法。 圖3E繪示圖3A之主動元件陣列基板的修補方法示意 圖。請參照圖3E，當主動元件陣列基板300上的一資料配 線330斷裂，斷裂的位置標示為斷線處330a時，可以用雷 射熔接的方法進行修補。當檢查到圖3E標示之局部區域a 中，有一資料配線330斷裂’且斷線處330a位於熔接點 13 17030twf.doc/g 332a至熔接點332b之間（或位在熔接點332b至熔接點 334b之間）時，可以先在熔接點332a以雷射熔接第一線段 332與第-修補，線352之-末端，並且在炼接點幻仆以雷 射熔接第二線段334與第一修補線352之另一末端，如此 電流即可延著第一修補線352使資料配線33〇導通。成 在另一種情形下，如果此顯示面板是以點反轉(d〇t irwersion)或行反轉(c〇iumn inversi〇n)方式趨動當熔接點 332a與334b被雷射熔接後，由於資料配線33〇經由第一 修補線352導通’且晝素電極344覆蓋在此第一修補線乃2 上’因此在局部區域a右邊的晝素電極344與局部區域a 中的第一修補線352間也會有寄生電容Cpd產生。為了平 衡此寄生電谷Cpd，可以在圖3E標示之局部區域b中，於 溶接點332b，以雷射溶接第—線段说與第二修補線354 之一末端，並且在熔接點334a，以雷射熔接第二線段 與第二修補線354之另-末端。如此，在局部區域a盘局 部區域b之間，晝素電極344與左邊的第—修補線352間 之寄士電容cpd會相同於與左邊的第二修補線354間之寄 生電容cpd。當主動元件陣列基板3〇〇的驅動方式是採用 點反，或行反轉等驅動方式，這個畫素電極344兩邊的寄 生電容cpd之效應就可以相互抵銷。 承上所述，若斷線處330a位在熔接點33乜至熔接點 334b之間或位在熔接點33仆至熔接點33^之間時，可以 先在炫接點332b以雷射溶接第—線段332與第二修補線 之末並且在炼接點334a以雷射炼接第二線段 1329772 17030twf.doc/g 與第二修補線354之另一末端。在熔接點332b與334a做 雷射熔接後’必須在圖3E標示之局部區域^中，於炼接 . 點332a，，以雷射熔接第一線段332與第一修補線352之一 末端，並且在熔接點334b，，以雷射熔接第二線段334與第 一修補線352之另一末端。以下將進一步說明配置修補線 組350的優點。 由於母一修補線組350對應一個連接線段336配置， 其中第一修補線352與第二修補線354分別位於對應之連 鲁 接線段336之對侧，且第一線段352與第二線段354的末 端分別位於對應之第一線段332與第二線段334下方。第 一修補線352與第二修補線354可用以修補斷裂的資料配 . 線33〇，也可用以遮擋漏光。就修補的功能而言，相較於 習知技術，不論主動元件陣列基板300中的晝素顯示區有 幾條資料配線330斷裂，這些斷裂的資料配線mo皆可被 修復。修復後之主動元件陣列基板3〇〇也不會有訊號延遲 與訊號衰減的問題。 ； • 此外，這些修補的動作並不需用到雷射化學氣相沉積 的方式’而疋利用雷射炫接法(laser welding)，可以在組成 * 液晶盒後由玻璃的背部進行雷射熔接修補。因此在使用低 ’介電絕緣層（厚度1〜3微米以上)的高開口率製程與當斷FIG. 1A is a schematic view showing the structure of a conventional thin film transistor array substrate. Figure 10 shows a schematic view of the thin film transistor array substrate of Figure 1A along the section line A, and Figure 2 shows a schematic structural view of the liquid crystal display panel made of the thin film transistor array substrate of Figure jA. Referring to FIG. 1A and FIG. 1B simultaneously, the thin film transistor array substrate 1 includes a glass substrate. U〇, household scanning wiring 丨2〇, multiple data wirings 13〇, multiple paintings 1329772 17030twf.doc/ The g element unit 140 and at least one repair line 15 (shown in Figure 2A). The scan wiring 120, the data wiring 130, the halogen unit 140, and the repairing line 150 are all disposed on the glass substrate 110, and the halogen unit 140 is electrically connected to the corresponding whisk wiring 12 and the data wiring 13 Each pixel unit 140 includes a thin film transistor 142 and a transparent conductive electrode (eg, indiurn tin oxide (ITO)) 144. The thin film transistor array substrate 100 inevitably produces some breaks during the manufacturing process. These broken wires can be detected by an array test process and can be repaired by laser chemical vapor deposition (laser CVD) in the repair process. However, not all breaks are suitable for laser chemical vapor deposition. For example, a high aperture ratio process using a low dielectric insulating layer or when a broken wire is detected after forming a liquid crystal cell. The gap capacitance Cpd (Capacitance between pixel and data line) between the data wiring 130 and the transparent conductive electrode 144 is one of the main factors affecting the aperture ratio. When the effect of the stray capacitance Cpd is too large, the transparent conductive electrode 144 is placed on the transparent conductive electrode 144. The held charge is easily affected by the adjacent data wiring 13 and produces a cross talk effect. In order to reduce the stray capacitance Cpd effect and increase the aperture ratio, many methods have been studied, one of which is to add a low dielectric constant insulator layer between the data wiring 130 and the transparent conductive electrode 144 (not It is shown that, when the dielectric constant of the insulating layer is 3·5, the thickness on the data wiring is about 1 to 3 micro-required, and the transparent conductive electrode 144 can be straddle the data wiring 13〇17030twf.doc/ g Increase the aperture ratio. The low dielectric insulator layer ' used in the above method may include organic, inorganic, sensitized and nonphoto-sensitivity materials and the like. In order to effectively reduce the stray capacitance Cpd effect in the process, the thickness of the insulating layer between the transparent conductive electrode 144 and the data wiring 13〇 often needs to be 1 to 3 micrometers (ym) or more, when the data wiring 130 is broken during the process. In the traditional front repair method, it is necessary to dig through the 1~3 micron (//m) thick insulating layer to repair the broken data wiring 130, so it is easy to produce other defects in the repairing process, affecting the repairing position. A normal display of the transparent conductive electrode 144 is adjacent. In addition, when the broken wire is formed after the thin film transistor substrate 1 is assembled with a color filter substrate (not shown) and injected into a liquid crystal (not shown), the thin film transistor matrix occurs due to the disconnection. The (TFT array) end has been coated in the entire liquid crystal cell, so it cannot be repaired by the electro-chemical vapor deposition method above the broken wire, in order to avoid formation on the liquid crystal display panel (not shown). For the bright line, there is another repair method in which the liquid crystal display panel is repaired by the repair line 150 of the thin film transistor array substrate 100. Referring to Fig. 2A, the liquid crystal display panel 200 is formed of the above-described thin film transistor array substrate 100, and has a plurality of scanning wirings, a plurality of data wirings 130, and a repairing line 150. When it is found that the liquid crystal display panel 2 has a broken wire, it must be repaired by the repairing line 15〇. For example, when a damaged data wiring 130 is detected on the liquid crystal display panel 200, the repaired wire 150 and the damaged data wiring 130 may be laser-welded at the fusion splices 150a and 150b, respectively, so as to be damaged. The data wiring ι3〇 can restore most of the functions via the repair line 150. 17030twf.doc/g However, since the repair line i5 of the liquid crystal display panel 200 usually has a limit of quantity, the number of data wirings 130 that can be repaired is limited, and when there are more than one broken line or one piece of data When there are two or more breakpoints on the wiring 130, the liquid crystal display panel 2〇〇 cannot be repaired, and the number of broken wires that can be repaired is limited. In addition, the size of the panel is getting larger and larger, and the length of the repairing wire 150 is also longer and longer, which causes the signal delay and signal attenuation to occur when the signal is transmitted over a long distance, so that the liquid crystal display panel 200 can be seen. Not good. SUMMARY OF THE INVENTION In view of the above, an object of the present invention is to provide an active device array substrate which can improve the display quality of a liquid crystal display panel. Another object of the present invention is to provide a repair method for an active device array substrate capable of repairing multiple data wiring breaks or single data wiring breaks, and avoiding signal delay and signal attenuation; Repairing the back of the active device array substrate can reduce other defects that occur during repair. The present invention provides an active device array substrate comprising a substrate, a plurality of scan wires, a plurality of data wires, and a plurality of pixel units. The scan wiring and the data wiring are disposed on the substrate, wherein between each of the two adjacent scan wirings, each data wiring has a first line segment, a second line segment, and a connecting the first line segment and the second line segment The connecting line segment. The pixel unit is disposed on the substrate and electrically connected to the corresponding scan wire and the data wire. The first line segment and the second line segment of each data wire are respectively located between any two adjacent scan wires. Below the dioxet unit adjacent to it. 1329772 i7030twf.doc/g In an active device array substrate according to a preferred embodiment of the present invention, each of the pixel units includes, for example, an active device and a halogen electrode. Painting; the elemental electrode through the active component and the corresponding scan wiring and data wiring electrical phase. According to the active device array substrate of the preferred embodiment of the present invention, the first line segment and the second line segment of each data line are located adjacent to the dioxins adjacent to each other. Below the electrode. The active device array substrate according to the preferred embodiment of the present invention further includes, for example, a plurality of common wirings disposed on the substrate, the common wiring system being formed on the substrate simultaneously with the scanning wiring, wherein each pixel The electrodes and the corresponding shared wiring constitute a storage capacitor. The active device array substrate according to the preferred embodiment of the present invention, wherein the halogen electrode is, for example, a rectangular electrode.舰本发·佳 implementation _敎 active device array substrate, wherein the halogen electrode has two first-electrode portions, respectively located on both sides of a first reference line and connected to each other, and the first electrode portions are symmetrical to the first Come to the test line. In accordance with the active device array substrate of the present invention, the shape of the first electrode portions is, for example, a parallelogram. According to a preferred embodiment of the present invention, the active element '.t has two second electrode portions per electrode portion, respectively connected to one side of the work i and connected to each other, and the second electrode portions are symmetric In the active element according to the preferred embodiment of the present invention, the shape of the second electrode portions is, for example, a parallelogram. The soil plate has a 17030 twf.doc/g active element array according to a preferred embodiment of the present invention. The substrate further includes a plurality of sets of repairing lines disposed on the substrate, wherein each of the repairing line groups corresponds to one of the connecting line segments, and each of the repairing line groups includes, for example, a first repairing line and a second repairing line. The repairing line and the second repairing line are electrically insulated from the data wiring, and the first repairing line and the second repairing line are respectively located on opposite sides of the corresponding connecting line segment, and the repairing lines and the connecting line segments are not in the same layer as the data wiring. The metal wiring is formed at the same time. In the case of the present invention, the first repairing line, the second repairing line, and the connecting line segment are formed together when the scanning wiring is formed, so the first repair is performed. The ends of the line and the second repairing line are respectively located under the first line segment and the second line segment of the corresponding data wiring. The active device array substrate according to the preferred embodiment of the present invention, between any two adjacent scanning wires The first repairing line and the second repairing line next to each data wiring are respectively located under the adjacent two-pixel electrodes. The present invention proposes a repairing method for the active device array substrate, which adopts laser welding. Repairing the back of the active component array substrate. The repairing method includes soldering the end of the first repairing line or the end of the second repairing line to the corresponding first-line segment and the second line segment, and the material information can be connected through the repairing line. Continue to pass. And since the data wiring in each unit has a corresponding repair line, it can be repaired for each defective unit. · · In summary, the active device array substrate of the present invention In the middle, the first line segment and the second line segment of each of the two adjacent brush wires are respectively located at 17030 twf.doc/g located adjacent to the adjacent diode electrode. Below, these pixel electrodes are separated from the data wiring by one or more layers, organic or non-organic, photosensitive or non-photosensitive insulator layers, in conjunction with dot inversion or column inversion. The method can offset the effect of parasitic capacitance to improve the display quality of the liquid crystal display panel. In addition, each pixel unit has a corresponding repair mechanism, which can repair multiple broken lines and compare with the periphery of the bypass display area. In the wire repair method, the repair method of the active device array substrate proposed by the present invention is less likely to cause signal delay and signal attenuation. The above and other objects, features and advantages of the present invention are more apparent and understood. The embodiments, in conjunction with the drawings, are described in detail below. [Embodiment] FIG. 3A is a schematic structural view of an active device array substrate according to a first embodiment of the present invention. 3B, 3C and 3D are cross-sectional views showing the active device array substrate of FIG. 3A along section lines a-b, c-d and e-f, respectively. Referring to FIG. 3A to FIG. 3D, the active device array substrate 3A of the present embodiment includes a substrate 310, a plurality of scan lines 320, a plurality of data lines 330, and a plurality of pixel units 340. The relative positions, detailed structures, and materials of the substrate 310, the scan wiring 320, the data wiring 330, and the halogen unit 340 will be further described below. The substrate 310 is, for example, a glass substrate, a quartz substrate, or a substrate of other suitable materials. The scan wiring 320 is disposed on the substrate 310 and may be an aluminum alloy wiring or a wiring formed of other suitable conductive materials. The data wiring 33〇 1329772 17030twf.doc/g is disposed on the substrate 310 and can be a wiring formed by a metal wiring, a |g alloy wiring, or other suitable conductive material. Between any two adjacent scan lines 32A, each data line 330 has a first line segment 332, a second line segment 334 and a connecting line segment 336, and the connecting line segment 336 connects the first line segment 332 with the second line segment. 334. The pixel unit 340 is disposed on the substrate 310 and electrically connected to the corresponding scan line 320 and the data line 330. The first line segment 332 of each data line 330 is between any two adjacent scan lines 320. And the second line: segment 334 is located below the dioxet unit 340 adjacent to the data line 330, respectively. In the present embodiment, the pixel unit 340 includes an active element 342 and a halogen electrode 344. The active component 342 is, for example, a thin film transistor or other tri-p〇lar switching device. The halogen electrode 344 is electrically connected to the corresponding scan wiring 320 and the data wiring 330 through the active component 342. The halogen electrode 344 is, for example, a transmissive electrode, a reflective electrode or a semi-transparent half. The reflective electrode (transflective eiectr〇de), and the material of the pixel electrode 344 may be indium tin oxide, indium zinc oxide (IZ0), metal or other transparent or opaque conductive material. Further, between any two adjacent scan lines 320, the first line segment 332 and the second line segment 334 of each data line 330 are respectively located below the diode electrode 344 adjacent to the data line 330. In order to break the data wiring 330 of the active device array substrate 300, the active device array substrate 300 of the present embodiment includes a plurality of sets of repair wire groups 350'. These repair wire groups 340 are disposed on the substrate 310. Each of the 12 1329772 17030 twf.doc/g repair line sets 340 is configured for one connection line segment 336, and each repair line set 350 includes a first repair line 352 and a second repair line 354. The material of the first repairing line 352 and the second repairing line 354 is, for example, an aluminum alloy or other suitable conductive material, and is respectively located on the opposite side of the corresponding connecting line segment 336, and the ends of the first repairing line 352 and the second repairing line 354 are respectively They are respectively located below the corresponding first line segment 332 and the second line segment 334. Furthermore, the first repairing line 332 and the second repairing line 334 adjacent to each of the adjacent scanning lines 320 are located below the two halogen electrodes 344 adjacent to the data wiring 330. It is worth mentioning that the first repairing line 332, the second repairing line 334 and the connecting line segment 336 are formed at the same time as the data wiring 330. The first repairing line 332, the second repairing line 334 and the connecting line segment 336 can be made in the scan. The cat wiring 320, a shielding layer (not shown), or a common line (not shown) are formed together. When one of the data wirings 330 is broken, the active device array substrate 300 can be repaired by the first repairing line 352 or the second repairing line 354 of the repairing wire group 35A. The active device array substrate 300 is repaired by soldering the end of the first trimming line 352 or the end of the second repairing line 354 to the corresponding first line segment 332 and second line segment 334. The method of repairing will be explained in more detail below. FIG. 3E is a schematic view showing a repairing method of the active device array substrate of FIG. 3A. Referring to FIG. 3E, when a data distribution line 330 on the active device array substrate 300 is broken and the broken position is indicated as the broken portion 330a, it can be repaired by laser welding. When the partial area a indicated in FIG. 3E is inspected, there is a data line 330 broken and the broken line 330a is located between the fusion point 13 17030twf.doc/g 332a to the fusion point 332b (or at the fusion point 332b to the fusion point 334b). In the case of the first repair, the first line segment 332 and the first patch, the end of the line 352 may be laser welded at the fusion point 332a, and the second line segment 334 and the first patch are laser-welded at the refining point. At the other end of the line 352, the current can be extended by the first repair line 352 to turn on the data line 33. In another case, if the display panel is driven by dot inversion or row inversion, the fusion splices 332a and 334b are laser welded. The data wiring 33 is turned on via the first repairing line 352 and the halogen electrode 344 is overlaid on the first repairing line 2. Therefore, the halogen electrode 344 on the right side of the local area a and the first repairing line 352 in the partial area a There will also be a parasitic capacitance Cpd generated. In order to balance the parasitic electric valley Cpd, in the partial region b indicated in FIG. 3E, at the melting point 332b, the laser is melted to the first line and the end of the second repairing line 354, and at the fusion point 334a, The second line segment and the other end of the second repair line 354 are welded. Thus, between the partial region a and the disk portion region b, the gate capacitance cpd between the pixel electrode 344 and the left first repair line 352 is the same as the parasitic capacitance cpd between the second repair line 354 and the left. When the driving mode of the active device array substrate 3 is driven by dot reversal or line inversion, the effects of the parasitic capacitance cpd on both sides of the pixel electrode 344 can cancel each other out. As described above, if the disconnection 330a is located between the fusion splice point 33乜 to the fusion splice point 334b or between the fusion splice point 33 and the weld splice point 33^, the laser contact may be first performed at the flash joint 332b. At the end of the line segment 332 and the second repair line and at the refining point 334a, the second line segment 1329772 17030 twf.doc/g and the other end of the second repair line 354 are laser-welded. After the fusion splices 332b and 334a are laser-welded, it must be in the local region of FIG. 3E, and at the point 332a, the first line segment 332 and one end of the first repairing line 352 are welded by laser. And at the fusion point 334b, the second line segment 334 and the other end of the first repair line 352 are welded by laser. The advantages of configuring the repair line set 350 will be further explained below. The first repairing line 352 and the second repairing line 354 are respectively located on opposite sides of the corresponding connected wiring section 336, and the first line segment 352 and the second line segment 354 are disposed. The ends are located below the corresponding first line segment 332 and second line segment 334, respectively. The first repair line 352 and the second repair line 354 can be used to repair the broken data distribution line 33 〇, which can also be used to block light leakage. With respect to the repaired function, the broken data wiring mo can be repaired regardless of the prior art, regardless of the fact that several data wirings 330 are broken in the halogen display area in the active device array substrate 300. After the repair of the active device array substrate 3, there is no problem of signal delay and signal attenuation. • In addition, these repairs do not require the use of laser chemical vapor deposition, and laser welding can be used to laser the back of the glass after the * liquid crystal cell is formed. repair. Therefore, a high aperture ratio process and a low break using a low dielectric insulating layer (thickness of 1 to 3 microns or more)
線瑕疵是在組成液晶盒(cell)後才檢測到時，皆可利用^發 明做修補。 X 值得一提的是，本實施例雖以第一線段332、第二線 . 段334以及連接線段336為直線進行說明，但在其他實施 15 1329772 17030twf.doc/g 例中亦可視需求而為不同之形狀。 第二實施例 圖4A繪示本發明第一實施例之主動元件陣列基板的 結構不意圖。圖4B、圖4C與圖4D分別續示圖4A之主動 元件陣列基板沿剖面線a-b、c-d與e-f的剖面示意圖。請 同時參照圖4A至4D，本實施例之主動元件陣列基板4〇〇 與第一實施例之主動元件陣列基板300類似。本實施例之 主動元件陣列基板4〇α包括一基板310、多條掃瞒配線 • 320、多條資料配線430以及多個晝素單元44〇。 基板310以及掃猫配線320與第一實施例中所述相 同。在任二相鄰掃猫配線320之間，每一資料配線430包 . 括第一線段432、第二線段434以及一連接線段436，且第 一線段432與第二線段434為近似C字形之線段或近似υ 字形之線段，而直線狀的連接線段436連接第一線段432 與第二線段434。位於掃猫配線320 —側之第一線段432 與位於掃瞄配線320另一側之第二線段434則以一直線狀 的連接線段436連接。修補線組450的第一修補線452以 及第二修補線454則配合第一線段432、第二線段434以 • 及連接線段436彎折成近似C字形之線段或近似υ字形之 ’ 線段，以使第一修補線452的末端分別位於對應之第一線 段432下方，且使第二修補線454的末端分別位於對應之 第二線段434下方。此外，主動元件陣列基板400包括多 條共用配線460，這些共用配線460配置於基板310上， • 其可以與掃描配線320同時形成，且可為鋁合金配線或是 16 17030twf.doc/g 其他適當導體材料所形成的配線，而每一矩形狀的書素電 極444與對應之共用配線460構成一儲存電容。 與第一實施例相同地，在任二相鄰掃瞄配線32〇之 間，母一資料配線430的第一線段432與第二線段434分 別位於與此資料配線330相鄰的二晝素單元44〇的下方。 更詳細而言，每一資料配線430的第一線段432與第二線 段434分別位於與此資料配線33〇相鄰的二畫素電極444 的下方。因此在配合點反轉或行反轉等驅動方式後，以主 動元件陣列基板400製作之液晶顯示面板(未繪示）的顯示 不均現象可獲得改善。 ¥在主動元件陣列基板4〇〇中有一資料配線430斷裂 時，可以用雷射熔接的方法進行修補。舉例而言，若資料 配線430斷裂的位置位於第一線段432上，則以先在熔接 點432a以雷射熔接第一線段432與第一修補線452之一末 鈿’並且在溶接點432b以雷射熔接第一線段432與第一修 補線452之另一末端。然後，在覆蓋此第一修補線452的 晝素電極444之斜對驗置，將第二修補線454的兩末端 分別熔接於覆蓋此第二修補線454之第二線段434。如此， 寄生電容Cpd之效應就可以藉由點反轉或行反轉等驅動方 式而被相互抵銷。 —本實施例之主動元件陣列基板4〇〇所具有的優點與第 一貫％例中所述相同，故在此不再重述。 第三實施例 圖5A繪示本發明第一實施例之主動元件陣列基板的 17 17030twf.d〇c/g 結構示意圖。圖5B、圖5C與圖5D分別繪示圖5A之主動 元件陣列基板沿剖面線a_b、c-d與e f的剖面示意圖。請 同時參照圖5A至圖5D，本實施例之主動元件陣列基板5〇〇 與第二實施例之主動元件陣列基板4〇〇類似，不同之處在 於.在任二相鄰掃瞄配線32〇之間，每一資料配線53〇具 有一第一線段532、一第二線段534以及兩連接線段536。 攻兩個連接線段536皆為直線，且連接近似c字形或近似 U字形的第一線段532與第二線段534。位於掃瞄配線320 一侧之第一線段532與位於掃瞄配線320另一側之第二線 段534則以兩個直線的連接線段536連接。修補線組550 的第一修補線552之末端分別位於對應之第一線段532下 方’且使第二修補線554的末端分別位於對應之第二線段 534下方。 第二實施例與第三實施例的差別，在於對資料配線 530與掃描配線320或資料配線530與共用配線460之交 接區(cross over)。第三實施例的資料配線530有兩處跨越 掃描配線320與共用配線460，因此當斷路是發生在交接 區(cross over)的某一段時，可以透過另一段繼續傳送資料 訊息。其他的主動元件陣列基板500的修補方法與上述之 主動元件陣列基板400的修補方法相同，而主動元件陣列 基板500具有的優點與第一實施例中所述相同，故在此皆 不再重述。 第四實施例 圖6A繪示本發明第一實施例之主動元件陣列基板的 1329772 17030twf.doc/g 結構示意圖。圖6B、圖6C與圖6D分別繪示圖从之 元件陣列基板沿剖面線a-b、^與e_f的剖面示意圖 同時參ΐ圖6A至圖6D’本實施例之主動元件陣列基板_ 與第二實施例之主動7〇件陣列基板則的變形，不同之處 在於：在本實施例中，畫素單元_之晝素電極644具有 一分別位於一第一參考線644c兩側且彼此連接之第一電 極部份644a、644b，這些第一電極部份_、644b係對 稱於第一參考線644c，，而第一電極部份64乜、64仆的形 狀例如為平行四邊形。 此外，資料配線630的之第一線段632與第二線段634 近似C字形，且第一線段632與第二線段634沿著晝素電 極644邊緣彎折，以使第一線段632與第二線段634分別 位於與此資料配線630相鄰的二畫素電極444的下方。修 補線組650的第一修補線652以及第二修補線654亦沿著 晝素電極644邊緣彎折，以使第一修補線652的末端分別 位於對應之第一線段632下方，且使第二修補線654的末 端分別位於對應之第二線段634下方。 主動元件陣列基板600的修補方法與上述之主動元件 陣列基板400的修補方法相同，而主動元件陣列基板600 具有的優點與第一實施例中所述相同’故在此皆不再重述。 _第五實施例 圖7A繪示本發明第一實施例之主動元件陣列基板的 結構示意圖。圖7B、圖7C與圖7D分別繪示圖7A之主動 元件陣列基板沿剖面線a-b、c-d與e-f的剖面示意圖。請 1329772 17030twf.doc/g 同時參照圖7A至7D ’本實施例之主動元件陣列基板7〇〇 與第四實施例之主動元件陣列基板6〇〇類似，不同之處在 - 於：在本實施例中，晝素單元740之畫素電極744具有二 分別位於一第一參考線744c兩側且彼此連接之第一電極 部份744a、744b，這些第一電極部份74知、74仆係對稱 • 於第一參考線744c，而第一電極部份744a、74仆的形狀 為平行四邊形。此外，第一電極部份744a、744b各別具有 一为別位於一第二參考線744c’兩側且彼此連接之第二電 極部份744a’、744b，，這些第二電極部份744a’、74仆，係 對稱於第二參考線744c，’且第二電極部份744a，、74扑， 的形狀為平行四邊形。資料配線73〇的第一線段732與第 一線段734之形狀相同，且皆沿著晝素電極744之邊緣彎 - 折，以使第一線段732與第二線段734分別位於與此資料 配線730相鄰的二晝素電極744的下方。修補線組75〇包 括兩條第一修補線752以及兩條第二修補線754。這兩條 第一修補線752的末端皆位於對應之第一線段下方， • 而這兩條第二修補線754的末端皆位於對應之第一線段 734下方。 主動元件陣列基板700的修補方法與上述之主動元件 陣列基板400的修補方法類似。舉例而言，若資料配線73〇 之斷裂處位於第一線段732上，則先以雷射熔接對應的第 一修補線752之兩端，再於覆蓋此第一修補線乃2第一電 極部份744a之斜對角位置，將第一修補線乃2熔接於覆蓋 • 此第一修補線752之第一線段732。 20 1329772 17030twf.doc/g 主動元件陣列基板700具有的優點與第一實施例中所 述相同’故在此皆不再重述。 第六貫施例 圖8A繪示本發明第一實施例之主動元件陣列基板的 結構不意圖。圖8B、圖8C與圖8D分別繪示圖8A之主動 • 元件陣列基板沿剖面線a-b、c-d與e-f的剖面示意圖。請 4 肖時參照圖认至圖8D，本實施例之^動元件陣列基板8〇〇 ^ 為第五實施例之主動元件陣列基板700的變形。在主動元 • 件陣列基板700中，第一線段732與第二線段734之形狀 相同，但在主動元件陣列基板8〇〇中，資料配線的第 -線段832與第二線段834之形狀相互對稱，其餘部份則 相同於主動元件陣列基板700。 主動兀件陣列基板800的修補方法與上述之主動元件 陣列基板700的修補方法相同，而主動元件陣列基板腦 具有的優點與第-實施例中所述相同，故在此皆不再 第七實施例 Φ ㈣圖繪示本發明第-實施例之主動元件陣列基板的 結構示思圖。圖犯、圖％與圖9D分別繪示圖9八之主動 •兀件陣列基板沿剖面線a_b、e_d與e_f的剖面示意圖。請 •=參照圖9A至圖9D’本實施狀主動元件陣列基板9〇〇 ”第五實施例之主動兀件_基板7⑻類似，不同之處在 $ :在本實施例中，第-線段932之形狀近似c字形，而 帛二線段934之形狀近似數字3。此外，不同於如圖7A中 的主動元件陣列基板700具有兩條第—修補線乃2以及兩 ③ 21 17030twf.doc/g 條第二修補線754’圖9A中的主動元件陣列基板900具有 一條第一修補線752以及一條第二修補線754。 ’、 主動元件陣列基板900的修補方法與上述之主動元件 陣列基板400的修補方法相同，而主動元件陣列基板9〇〇 具有的優點與第一實施例中所述相同，故在此皆不再重述。 綜上所述，本發明之主動元件陣列基板及其修補方法 至少具有下列優點： 一、 本發明所提出之主動元件陣列基板中，修補線是 在與資料配線非同一層的金屬配線形成時一起成形的。在 本發明舉出的實施例中，修補線是在製作掃瞄配線時一起 成形的，另外，修補線可在製做其他遮光層（shielding layer) 或共通電極層（common line)時一起成形。以本發明提出之 主動元件陣列基板的修補方法修復斷線瑕疫，可修補多條 斷線或單條資料配線有兩處以上的斷點，另外亦不會成訊 號延遲、訊號衰減的問題。 二、 本發明的修補動作可不需用到雷射化學氣相沉積 的方式，而疋利用雷射炼接法(laser welding)，可以在組成 液晶盒(ceil)後由玻璃的背部進行雷射熔接修補。因此在使 用低介電絕緣層的高開口率製程，或當斷線瑕疵是在組成 液晶盒段後才檢測到時，本發明皆可做修補。 三、 在本發明提出之主動元件陣列基板中，任二相鄰 掃瞄配線之間，每一資料配線的第一線段與第二線段分別 位於與其相鄰之二晝素電極的下方，配合點反轉或行反轉 (column inversion)等驅動方式可抵銷寄生電容的效應，以 22 1329772 17030twf.doc/g 改善液晶顯示面板之顯示品質。 雖然本發明已以較佳實施例揭露如上，然其並非用以 . 限定本發明，任何熟習此技藝者，在不脫離本發明之精神 • 和範圍内，當可作些許之更動與潤飾，因此本發明之保護 範圍當視後附之申請專利範圍所界定者為準。 f 【圖式簡單說明】 圖1A繪示習知薄膜電晶體陣列基板的結構示意 圖〇 » • 目1B繪示圖ία之薄膜電晶體陣列基板沿剖面線a_b 的剖面示意圖。 圖2A繪示利用圖ία之薄膜電晶體陣列基板製成的 液晶顯示面板之結構示意圖。 圖3A繪示本發明第一實施例之主動元件陣列基板的 結構示意圖。 圖3B、圖3C與圖3D分別繪示圖3A之主動元件陣 列基板沿剖面線a_b、c_d與e_f的剖面示意圖。 • 圖3E繪示圖3A之主動元件陣列基板的修補方法示意 圖。 表圖4A繪示本發明第一實施例之主動元件陣列基板的 • 結構不意圖。 圖4B、圖4C與圖4D分別繪示圖4A之主動元件陣 列基板沿剖面線a-b、c-d與e-f的剖面示意圖。 圖5A繪示本發明第一實施例之主動元件陣列基板的 結構示意圖。 23 1329772 17030twf.doc/g 圖5B、圖5C與圖5D分別繪示圖5A之主動元件陣 列基板沿剖面線a_b、c_d與e-f的剖面示意圖。 圖6A鳍示本發明第一實施例之主動元件陣列基板的 結構示意圖。 圖6B、圖6C與圖6D分別繪示圖6A之主動元件陣 列基板沿别面線a-b、c-d與e-f的剖面示意圖。 圖7A繪示本發明第一實施例之主動元件陣列基板的 結構示意圖。 圖7B、圖7C與圖7D分別繪示圖7A之主動元件陣 列基板沿别面線a-b、c-d與e-f的剖面示意圖。 圖8A繪禾本發明第一實施例之主動元件陣列基板的 結構示意圖。 圖8B、圖8C與圖8D分別繪示圖8A之主動元件陣 列基板沿别面線a-b、c-d與e-f的剖面示意圖。 圖9A繪示本發明第一實施例之主動元件陣列基板的 結構示意圖° 圖9B、圖9C與圖9D分別繪不圖9A之主動元件陣 列基板沿别面線a-b、c-d與e-f的剖面示意圖。 【主要元件符號說明】 100 :薄族電晶體陣列基板 110 :玻璃基板 120、320 :掃瞄配線 130、330、430、530、630、730、830、930 :資料配 * 線 24 1329772 17030twf.doc/g 140、340、440、640、740 :晝素單元 142 :薄膜電晶體 144:透明導電電極 150 :修補線 150a、150b、332a、332b、332a，、332a”、334a、334b、 334b’、33b”、432a、432b、434a、434b、532a、532b、534a、 534b :熔接點 200 :液晶顯示面梭 300、400、500、600、700、800、900 :主動元件陣 列基板 310 :基板 330a :斷線處 332、432、532、632、732、832、932 :第一線段 334、434、534、634、734、834、934 :第二線段 336、436、536 :連接線段 342 :主動元件 344、444、644、744 :晝素電極 350、450、550、650、750 :修補線組 352、452、552、652、752 :第一修補線 354、454、554、654、754 :第二修補線 460、660、760 :共用配線 644a、644b、744a、744b :第一電極部份 644c、744c :第一參考線 744a’、744b’ ：第二電極部份 25 1329772 17030twf.doc/g 744c :第二參考線 a、b、c :局部區域When the wire is detected after forming a liquid crystal cell, it can be repaired by using the invention. X It is worth mentioning that although the first line segment 332, the second line segment 334 and the connecting line segment 336 are straight lines, the present embodiment can also be used in other embodiments 15 1329772 17030 twf.doc/g. For different shapes. Second Embodiment Fig. 4A is a view showing the structure of an active device array substrate according to a first embodiment of the present invention. 4B, 4C and 4D are cross-sectional views showing the active element array substrate of Fig. 4A along section lines a-b, c-d and e-f, respectively. 4A to 4D, the active device array substrate 4 of the present embodiment is similar to the active device array substrate 300 of the first embodiment. The active device array substrate 4A of the present embodiment includes a substrate 310, a plurality of broom wirings 320, a plurality of data wirings 430, and a plurality of pixel units 44A. The substrate 310 and the whisk wiring 320 are the same as described in the first embodiment. Between any two adjacent brush wires 320, each data line 430 includes a first line segment 432, a second line segment 434, and a connecting line segment 436, and the first line segment 432 and the second line segment 434 are approximately C-shaped. The line segment or the line segment of the approximate U-shape, and the linear connecting line segment 436 connects the first line segment 432 with the second line segment 434. The first line segment 432 on the side of the whisk wiring 320 and the second line segment 434 on the other side of the scan wiring 320 are connected in a straight connecting line segment 436. The first repairing line 452 and the second repairing line 454 of the repairing wire set 450 are matched with the first line segment 432, the second line segment 434, and the connecting line segment 436 to form a line segment of approximately C-shape or a line segment of approximately U-shape. The ends of the first repairing lines 452 are respectively located below the corresponding first line segments 432, and the ends of the second repairing lines 454 are respectively located below the corresponding second line segments 434. In addition, the active device array substrate 400 includes a plurality of common wirings 460 disposed on the substrate 310, which may be formed simultaneously with the scanning wiring 320, and may be aluminum alloy wiring or 16 17030 twf.doc/g The wiring formed by the conductor material, and each of the rectangular-shaped pixel electrodes 444 and the corresponding common wiring 460 constitute a storage capacitor. As in the first embodiment, between any two adjacent scan lines 32A, the first line segment 432 and the second line segment 434 of the mother-data wiring 430 are respectively located adjacent to the data line 330. Below the 44th floor. In more detail, the first line segment 432 and the second line segment 434 of each data line 430 are respectively located below the two pixel electrodes 444 adjacent to the data line 33A. Therefore, after the driving method such as dot inversion or line inversion is performed, the display unevenness of the liquid crystal display panel (not shown) produced by the active element array substrate 400 can be improved. When a data wiring 430 is broken in the active device array substrate 4, it can be repaired by laser welding. For example, if the location where the data wiring 430 breaks is located on the first line segment 432, the first line segment 432 and the first repair line 452 are first laser welded at the fusion point 432a, and at the fusion point. 432b fuses the first line segment 432 and the other end of the first repair line 452 with a laser. Then, at the oblique alignment of the halogen electrodes 444 covering the first repairing line 452, both ends of the second repairing line 454 are respectively welded to the second line segment 434 covering the second repairing line 454. Thus, the effect of the parasitic capacitance Cpd can be offset by the driving methods such as dot inversion or line inversion. The advantages of the active device array substrate 4 of the present embodiment are the same as those described in the first embodiment, and therefore will not be repeated here. Third Embodiment FIG. 5A is a schematic view showing the structure of 17 17030 twf.d〇c/g of an active device array substrate according to a first embodiment of the present invention. 5B, 5C and 5D are schematic cross-sectional views of the active device array substrate of FIG. 5A along section lines a_b, c-d and ef, respectively. 5A to 5D, the active device array substrate 5A of the present embodiment is similar to the active device array substrate 4A of the second embodiment, except that any two adjacent scan wires 32 are used. Each of the data wires 53A has a first line segment 532, a second line segment 534, and two connecting line segments 536. The two connecting line segments 536 are all straight lines, and connect the first line segment 532 and the second line segment 534 which are approximately c-shaped or approximately U-shaped. The first line segment 532 on one side of the scan wiring 320 and the second line segment 534 on the other side of the scan wiring 320 are connected by two straight connecting line segments 536. The ends of the first repairing lines 552 of the repairing wire group 550 are respectively located below the corresponding first line segments 532 and the ends of the second repairing lines 554 are respectively located below the corresponding second line segments 534. The difference between the second embodiment and the third embodiment lies in the crossover of the data wiring 530 and the scanning wiring 320 or the data wiring 530 and the common wiring 460. The data wiring 530 of the third embodiment has two crossings of the scanning wiring 320 and the common wiring 460. Therefore, when the disconnection occurs in a certain section of the crossover, the data message can be continuously transmitted through the other section. The repair method of the other active device array substrate 500 is the same as the repair method of the active device array substrate 400 described above, and the active device array substrate 500 has the same advantages as those described in the first embodiment, and therefore will not be repeated here. . Fourth Embodiment FIG. 6A is a schematic view showing the structure of an active device array substrate of 1329772 17030 twf.doc/g according to a first embodiment of the present invention. 6B, FIG. 6C and FIG. 6D are schematic cross-sectional views of the element array substrate along the section lines ab, ^ and e_f, respectively. Referring to FIG. 6A to FIG. 6D, the active device array substrate and the second implementation of the present embodiment The deformation of the active 7-piece array substrate is different in that, in this embodiment, the pixel unit 644 has a first pixel on each side of a first reference line 644c and is connected to each other. The electrode portions 644a, 644b, the first electrode portions _, 644b are symmetrical to the first reference line 644c, and the first electrode portions 64 乜, 64 are shaped like a parallelogram. In addition, the first line segment 632 and the second line segment 634 of the data wiring 630 are approximately C-shaped, and the first line segment 632 and the second line segment 634 are bent along the edge of the halogen electrode 644 so that the first line segment 632 and The second line segments 634 are respectively located below the two pixel electrodes 444 adjacent to the data wiring 630. The first repairing line 652 and the second repairing line 654 of the repairing wire set 650 are also bent along the edge of the halogen electrode 644 such that the ends of the first repairing line 652 are respectively located below the corresponding first line segment 632, and The ends of the two repair lines 654 are respectively located below the corresponding second line segments 634. The repair method of the active device array substrate 600 is the same as that of the above-described active device array substrate 400, and the active device array substrate 600 has the same advantages as those described in the first embodiment, and thus will not be repeated here. - Fifth Embodiment FIG. 7A is a schematic view showing the structure of an active device array substrate according to a first embodiment of the present invention. 7B, 7C and 7D are cross-sectional views showing the active device array substrate of FIG. 7A along section lines a-b, c-d and e-f, respectively. Please refer to FIGS. 7A to 7D simultaneously. The active device array substrate 7A of the present embodiment is similar to the active device array substrate 6A of the fourth embodiment, and the difference lies in: In the example, the pixel electrode 744 of the halogen unit 740 has two first electrode portions 744a and 744b respectively located on both sides of a first reference line 744c and connected to each other. The first electrode portions 74 are known to be symmetrical. • On the first reference line 744c, the first electrode portions 744a, 74 are shaped as parallelograms. In addition, the first electrode portions 744a, 744b each have a second electrode portion 744a', 744b which is located on both sides of a second reference line 744c' and connected to each other, and the second electrode portion 744a', The servant is symmetrical to the second reference line 744c, and the second electrode portions 744a, 74 are shaped as parallelograms. The first line segment 732 of the data line 73〇 has the same shape as the first line segment 734, and is bent along the edge of the pixel electrode 744 such that the first line segment 732 and the second line segment 734 are located here. The data wiring 730 is below the adjacent dioxet electrode 744. The repair line set 75 includes two first repair lines 752 and two second repair lines 754. The ends of the two first repair lines 752 are located below the corresponding first line segments, and the ends of the two second repair lines 754 are located below the corresponding first line segments 734. The repair method of the active device array substrate 700 is similar to the above-described repair method of the active device array substrate 400. For example, if the break of the data wiring 73 is located on the first line segment 732, the two ends of the corresponding first repair line 752 are first laser-welded, and then the first repair line is covered with the first electrode. The diagonally opposite position of the portion 744a welds the first repair line 2 to the first line segment 732 covering the first repair line 752. 20 1329772 17030twf.doc/g The active device array substrate 700 has the same advantages as those described in the first embodiment, and therefore will not be repeated here. Sixth Embodiment FIG. 8A is a schematic view showing the structure of an active device array substrate according to a first embodiment of the present invention. 8B, 8C and 8D are cross-sectional views of the active device array substrate of FIG. 8A along section lines a-b, c-d and e-f, respectively. Referring to FIG. 8D, the device array substrate 8 of the present embodiment is a modification of the active device array substrate 700 of the fifth embodiment. In the active device array substrate 700, the first line segment 732 and the second line segment 734 have the same shape, but in the active device array substrate 8, the shape of the first line segment 832 and the second line segment 834 of the data wiring are mutually Symmetrical, the rest is the same as the active device array substrate 700. The repair method of the active component array substrate 800 is the same as the repair method of the active device array substrate 700 described above, and the advantages of the active device array substrate brain are the same as those described in the first embodiment, so the seventh implementation is no longer used here. Example Φ (D) is a schematic view showing the structure of an active device array substrate according to a first embodiment of the present invention. Fig. 9 and Fig. 9D respectively show a schematic cross-sectional view of the active array element substrate along the section lines a_b, e_d and e_f. Referring to FIG. 9A to FIG. 9D, the active element array substrate 9A of the present embodiment is similar to the active element_substrate 7 (8) of the fifth embodiment, except that in the present embodiment, the first line segment 932 The shape is approximately c-shaped, and the shape of the second line segment 934 is approximately the number 3. Further, unlike the active device array substrate 700 as shown in FIG. 7A, there are two first repair lines 2 and two 3 21 17030 twf.doc/g The second repair line 754' has an initial repair line 752 and a second repair line 754. The repair method of the active device array substrate 900 and the repair of the active device array substrate 400 described above. The method is the same, and the advantages of the active device array substrate 9A are the same as those described in the first embodiment, and therefore will not be repeated here. In summary, the active device array substrate of the present invention and the repairing method thereof are at least The invention has the following advantages: 1. In the active device array substrate proposed by the present invention, the repairing line is formed together with the metal wiring which is not in the same layer as the data wiring. The embodiment of the present invention is exemplified. The repairing line is formed together when the scanning wiring is formed. In addition, the repairing line can be formed together when making other shielding layers or a common line. The active device array substrate proposed by the present invention The repair method can repair the plague of the broken line, and can repair multiple broken lines or multiple data lines with more than two breakpoints, and it will not cause signal delay and signal attenuation. 2. The repairing action of the present invention can be eliminated. To laser chemical vapor deposition, and laser welding can be used to repair the laser from the back of the glass after the liquid crystal cell (ceil). Therefore, the use of low dielectric insulation layer The high aperture ratio process, or when the wire breakage is detected after forming the liquid crystal cell segment, can be repaired by the present invention. 3. In the active device array substrate proposed by the present invention, any two adjacent scan wires Between the first line segment and the second line segment of each data line are respectively located below the adjacent dioxet electrode, and the driving point is reversed or the column inversion is driven. The effect of the parasitic capacitance is offset, and the display quality of the liquid crystal display panel is improved by 22 1329772 17030 twf.doc/g. Although the invention has been disclosed above in the preferred embodiments, it is not intended to limit the invention, and anyone skilled in the art The scope of protection of the present invention is subject to the definition of the scope of the appended claims, without departing from the spirit and scope of the invention. 1A is a schematic view showing the structure of a conventional thin film transistor array substrate. •»1B is a schematic cross-sectional view of the thin film transistor array substrate along the section line a_b. 2A is a schematic view showing the structure of a liquid crystal display panel made of a thin film transistor array substrate of FIG. 3A is a schematic structural view of an active device array substrate according to a first embodiment of the present invention. 3B, 3C and 3D are cross-sectional views showing the active element array substrate of FIG. 3A along section lines a_b, c_d and e_f, respectively. FIG. 3E is a schematic view showing a repairing method of the active device array substrate of FIG. 3A. 4A is a schematic view showing the structure of an active device array substrate according to a first embodiment of the present invention. 4B, 4C and 4D are cross-sectional views showing the active element array substrate of FIG. 4A along section lines a-b, c-d and e-f, respectively. FIG. 5A is a schematic structural view of an active device array substrate according to a first embodiment of the present invention. 23 1329772 17030twf.doc/g FIGS. 5B, 5C and 5D are cross-sectional views showing the active element array substrate of FIG. 5A along section lines a_b, c_d and e-f, respectively. Fig. 6A is a schematic view showing the structure of an active device array substrate according to a first embodiment of the present invention. 6B, 6C and 6D are cross-sectional views showing the active element array substrate of Fig. 6A along the other line a-b, c-d and e-f, respectively. FIG. 7A is a schematic structural view of an active device array substrate according to a first embodiment of the present invention. 7B, 7C and 7D are cross-sectional views showing the active element array substrate of Fig. 7A along the other line a-b, c-d and e-f, respectively. Fig. 8A is a view showing the structure of an active device array substrate according to a first embodiment of the present invention. 8B, 8C and 8D are schematic cross-sectional views of the active device array substrate of Fig. 8A along the other line a-b, c-d and e-f, respectively. 9A is a schematic structural view of an active device array substrate according to a first embodiment of the present invention. FIG. 9B, FIG. 9C and FIG. 9D are schematic cross-sectional views of the active device array substrate along the other line a-b, c-d and e-f, respectively. [Description of main component symbols] 100: Thin family transistor array substrate 110: Glass substrate 120, 320: Scanning wiring 130, 330, 430, 530, 630, 730, 830, 930: Data distribution line 24 1329772 17030twf.doc /g 140, 340, 440, 640, 740: halogen unit 142: thin film transistor 144: transparent conductive electrode 150: repair lines 150a, 150b, 332a, 332b, 332a, 332a", 334a, 334b, 334b', 33b", 432a, 432b, 434a, 434b, 532a, 532b, 534a, 534b: fusion point 200: liquid crystal display surface shuttle 300, 400, 500, 600, 700, 800, 900: active device array substrate 310: substrate 330a: Broken line 332, 432, 532, 632, 732, 832, 932: first line segment 334, 434, 534, 634, 734, 834, 934: second line segment 336, 436, 536: connecting line segment 342: active component 344, 444, 644, 744: halogen electrodes 350, 450, 550, 650, 750: repair line sets 352, 452, 552, 652, 752: first repair lines 354, 454, 554, 654, 754: second Repair lines 460, 660, 760: common wirings 644a, 644b, 744a, 744b: first electrode portions 644c, 744c: first reference line 744a' 744b ': part of the second electrode 25 1329772 17030twf.doc / g 744c: second reference line a, b, c: local area
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