TWI326921B - A package method of a light-emitting diode and a structure thereof - Google Patents

Description

1326921 IX. Description of the invention: [Technical field to which the invention pertains] The invention is related to a packaging method and structure of a diode, in particular, a packaging method and structure of an ultra-thin LED. [Prior Art], the first light-emitting diode was made by Hq1(10)_scaled fossils in the 1960s. 'At that time, it was shown in red light' and the efficiency was quite weak, only 〇 1 lm/W. Until the Japanese developed a blue light-emitting diode to break through the relevant technical bottlenecks in the righteous year, the light-emitting diode became an emerging light source for the lighting industry. The light-emitting diode belongs to the compound semiconductor, and emits energy in the form of light emission when combined with electron holes in the p-type and N-type semiconductor materials. Because the light-emitting diode has a small specific product, long life, low driving voltage, low power consumption, fast response rate, and good shock resistance. At present, light-emitting diodes have been widely used in optical display devices, traffic signs, data storage devices, communication devices, [lighting devices and medical devices, and become indispensable photoelectric components in daily life. In recent years, due to consumers' love for thin, light and portable electronic products, the packaging of light-emitting diodes has also begun to develop toward a light and short. In the conventional packaging process of the light-emitting diode, the electrical connection between the light-emitting diode and the circuit substrate is completed by wire bonding. However, because the wire material occupies a certain volume and height, the package size of the light-emitting diode is limited, and it is impossible to package a light-emitting thin and light-emitting diode. Therefore, a flip chip technology has been developed. In this technique, history) 5 1326921, a light-emitting diode wafer is directly bonded to a circuit substrate. The step of wiring is eliminated, and the volume required for the wire is also eliminated. Therefore, the flip chip technology can package a smaller size LED than the conventional wire bonding technology. However, with the rapid changes in the electronic product market, the volume of the light-emitting diode packaged by flip chip technology has gradually failed to meet the market demand. What is needed on the market is a smaller package size than a light-emitting diode chip. Therefore, some people began to taste the thickness of the portion of the light-emitting diode wafer to continue to reduce the package volume of the light-emitting diode. However, the thickness that can be ground is limited. This is because the strength of the light-emitting diode wafer is lowered during the polishing of the light-emitting diode wafer. Therefore, when the light-emitting diode wafer is ground beyond a certain thickness, the external force applied by the polished light-emitting diode wafer may cause the light-emitting diode wafer to be broken. SUMMARY OF THE INVENTION It is therefore an object of the present invention to provide a method and structure for packaging a light emitting diode. With this packaging method and structure, it is possible to package a lighter diode having a thinner thickness and a smaller volume. It is not limited by the volume of the wire or the thickness of the diode wafer itself. According to the above object of the present invention, a packaging method of a light emitting diode is proposed. The first S' forms two solder balls on the positive and negative electrodes of the circuit substrate. Thereafter, the light-emitting diode wafer is placed on the solder balls in a flip chip manner to electrically connect the light-emitting diode wafer and the circuit substrate. The t-drain of the light-emitting diode chip is electrically connected to the positive electrode, and the N-pole and the negative electrode of the light-emitting diode chip are electrically connected. After that, the LED chip and the circuit 6 are pressed together.

Claims (1)

Original copy; X. Patent application scope: The packaging method of the h-type light-emitting diode comprises: forming at least two solder balls on the positive electrode and the negative electrode on the circuit substrate; Θ placing a light-emitting two in a flip chip manner The polar body wafer is electrically connected to the light emitting diode chip and the circuit substrate on the solder balls, wherein the P pole of the light emitting diode chip is electrically connected to the positive electrode, and the light emitting diode chip is electrically connected One of the N poles is electrically connected to the negative electrode; the δ is printed on the LED substrate and the circuit substrate; and a substrate of the LED chip is cut by a laser in a direction parallel to the circuit substrate. 2. The method of sealing a light-emitting diode according to claim 1, wherein the method of forming the solder ball is electroplating or printing. The method of encapsulating a light-emitting diode according to claim 1, wherein the method of pressing the light-emitting diode and the circuit substrate is thermocompression bonding. 4. The method of sealing a light-emitting diode according to claim 1, wherein the manner in which the light-emitting diode and the circuit substrate are pressed is ultrasonically pressed. 5. The method of sealing a light-emitting diode according to claim 1, wherein the laser cutting power is about 100-4000 watts. 12. The method of encapsulating a light-emitting diode according to claim 1, wherein the frequency of the laser is about 50 to 500 kHz. 7. The method of encapsulating a light-emitting diode according to claim 1, wherein the laser is a carbon dioxide laser, a Nd:YAG laser, a Nd:YV〇4 laser or a pseudo-molecular laser. . A package structure of a light-emitting diode, which is produced by the method according to any one of claims 1 to 7, comprising: a circuit substrate; at least two pads located at the a circuit board comprising a positive electrode and a negative electrode; at least two solder balls; and a light-emitting diode chip without a substrate, the light-emitting diode chip having a P-pole and an N-pole, wherein the solder balls are located The light-emitting diode and the light-emitting diode are electrically connected to the light-emitting diode chip and the circuit substrate, wherein the light-emitting diode is electrically connected to the positive electrode, and the light-emitting diode One of the N poles of the wafer is electrically connected to the negative electrode. 9. The cracking structure of the light-emitting diode according to claim 8, wherein the circuit substrate is made of silver, copper, copper alloy, copper-silver alloy, aluminum, aluminum alloy, ceramic material or printed circuit board. . 13 1326921 10. The package structure of the light-emitting diode according to claim 8, wherein the material of the circuit substrate is a ceramic material. The package structure of the light-emitting diode according to claim 8, wherein the circuit substrate is made of a metal material plated with gold or silver. 12. The package _, , ' of the light-emitting diode according to item 8 of the patent application. The material of the soldering iron is gold, silver, inscription, turn or handle. 13. The package structure of the light-emitting diode according to claim 8, wherein the solder ball is made of gold, silver, tin, gold tin alloy, silver glue or nano carbon tube glue. 14. The package structure of a light-emitting diode according to claim 8, wherein the light-emitting diode chip is a laser light-emitting diode chip. The package structure of the light-emitting diode according to claim 8, wherein the light-emitting diode chip is a high-power light-emitting diode chip. 14