TWI323000B - Load lock vacuum conductance limiting aperture - Google Patents
Load lock vacuum conductance limiting aperture Download PDFInfo
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- TWI323000B TWI323000B TW93106285A TW93106285A TWI323000B TW I323000 B TWI323000 B TW I323000B TW 93106285 A TW93106285 A TW 93106285A TW 93106285 A TW93106285 A TW 93106285A TW I323000 B TWI323000 B TW I323000B
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Description
1323000 t t · _案號93106285_年月日 修正·_ 五、發明說明(1) [發明所屬之技術領域] [0 0 0 1 ]本發明有關半導體晶圓加工方法與系統,尤其有關 晶圓加工中使用的負載固定室孔徑。 [先前技術] [0 0 02 ]製造晶圓卡匣時,可使用多種材料,尤其會使用某 些材料以期符合各種不同的目標,包括微粒控制,靜電放 電降低,重量、成本、與尺寸穩定性。當某一特定材料之 選擇可達成其目標時,也可能會在晶圓加工之其他層面產 生反效用。例如,晶圓上的塑膠卡匣或光阻材料可能表現 許多使之適用的結構性質,然而,它們對晶圓加工期間所 需的真空度可能會有反效用。 [0 0 0 3 ]此外,晶圓上的光阻材料可能對真空系統呈現極大 的氣體負載。晶圓加工期間,離子注入機内需要高度且可 重複的真空度,以確保正確劑量之可重複性與一致性,並 維持注入機或工具的生產能力,亦即,在一定時間内可加 工的晶圓數。於採用新的卡匣或光阻材料(諸如聚碳酸酯) 以便改進微粒控制及/或尺寸穩定性時,此種設備的終端 使用者可能並不了解其真空系統,包括其中的負載固定室 與隔離閥,可能需要重新架構以維持工具的性能。 [0 0 0 4 ]在典型的半導體晶圓加工系統中,晶圓卡匣不論其 中的晶圓是否有光阻材料遮罩,都可能被載入一負載固定 站,以準備轉送晶圓至加工或注入室。負載固定室中的壓 力可使用負載固定室真空泵使之下降到與注入室真空一致1323000 tt · _ case number 93106285_年月日日 Revision·_ V. Description of the invention (1) [Technical field of invention] [0 0 0 1] The present invention relates to a semiconductor wafer processing method and system, and more particularly to wafer processing The load is used in the fixed chamber aperture. [Prior Art] [0 0 02] When manufacturing wafer cassettes, a variety of materials can be used, especially using certain materials to meet various targets, including particle control, electrostatic discharge reduction, weight, cost, and dimensional stability. . When a particular material is selected to achieve its objectives, it may also have adverse effects at other levels of wafer processing. For example, plastic cassettes or photoresist materials on wafers may exhibit many of the structural properties that make them suitable, however, they may have an adverse effect on the vacuum required during wafer processing. [0 0 0 3 ] In addition, the photoresist material on the wafer may present a significant gas load on the vacuum system. During wafer processing, a high and repeatable vacuum is required within the ion implanter to ensure repeatability and consistency of the correct dose and to maintain the productivity of the implanter or tool, ie, the crystal that can be processed in a given time The number of circles. When new cassettes or photoresist materials (such as polycarbonate) are used to improve particle control and/or dimensional stability, the end user of such equipment may not be aware of their vacuum system, including the load-fix chambers therein. Isolation valves may need to be re-architected to maintain tool performance. [0 0 0 4 ] In a typical semiconductor wafer processing system, the wafer cassette, whether or not the wafer has a photoresist mask, may be loaded into a load fixed station to prepare the transfer wafer to processing. Or inject into the room. The pressure in the load-fixing chamber can be reduced to the vacuum in the injection chamber using the load-fix chamber vacuum pump.
1323000 ^ » » _案號93 ί 06285_年月曰 修正_ 五、發明說明(2) 的程度。隨後,負載固定室可與注入室互通,並讓晶圓轉 送進注入室内。在某些情況中,開啟負載固定室可能會導 致注入室内的壓爆,因此,需要一真空回復期間,讓注入 室内的壓力回到進行(離子)注入時可接受的程度,亦即, 可達成諸如注入劑量可重複性、一致性、能量污染、及/ 或工具產能等所需加工參數的壓力程度。因此,到第一次 注入的時間,亦即,從負載固定室抽空開始直到可開始進 行注入的時間,可以包括一負載固定室抽空期間與一加工 室真空回復期間。 [0005 ]在負載固定室抽空期間,可使用一負載固定室隔離 閥隔離負載固定室與注入室。此閥開啟時,允許靠近負載 固定室内的負載或晶圓。架構此閥時,可使之提供一開 子L,供晶圓通過該處。此等開孔可為矩形、圓形或橢圓 形,其延伸長度通常可充分超過負載固定室内的晶圓寬 度,且其延伸高度亦可大於晶圓及晶圓操作拾取器之全 高。例如,美國麻州格洛斯特地區瓦里安半導體設備同業 (Varian Semiconductor Equipment Associates of Gloucester, MA)製造的VllSta 810 Η P注入機所需的開孔 可為7cmx33cm左右,而通過該開孔的晶圓可為直徑30cm, 厚度小於1 mm。當此相當大的開孔開啟時,可在注入室内 產生大小對等的壓爆。加工室真空回復時間可能要對應地 延長,因此對注入機的產能及注入品質有不利的衝擊。 [發明内容]1323000 ^ » » _ Case number 93 ί 06285_年月曰 Correction _ 5. The extent of the invention description (2). The load cell can then be interconnected with the injection chamber and the wafer transferred into the injection chamber. In some cases, opening the load-fixing chamber may cause a pressure explosion in the injection chamber. Therefore, during a vacuum recovery period, the pressure in the injection chamber is returned to an acceptable level for (ion) injection, that is, achievable The degree of stress such as implant dose repeatability, consistency, energy contamination, and/or tool throughput. Thus, the time until the first injection, i.e., the time from the evacuation of the load cell to the start of the injection, may include a load cell evacuation period and a process chamber vacuum recovery period. [0005] During the evacuation of the load holding chamber, a load fixed chamber isolation valve can be used to isolate the load holding chamber from the injection chamber. When the valve is open, it allows access to loads or wafers within the load cell. When the valve is constructed, it can be provided with an opening L for the wafer to pass therethrough. The openings may be rectangular, circular or elliptical, and the extension length may generally exceed the width of the wafer in the load holding chamber, and the extension height may be greater than the full height of the wafer and wafer operation pickup. For example, the VllSta 810 Η P implanter manufactured by Varian Semiconductor Equipment Associates of Gloucester, MA, may have an opening of about 7 cm x 33 cm, and the crystal passing through the opening. The circle can be 30 cm in diameter and less than 1 mm thick. When this relatively large opening is opened, a size equivalent pressure burst can be created in the injection chamber. The vacuum recovery time of the processing chamber may be correspondingly extended, which has an adverse impact on the productivity and injection quality of the injection machine. [Summary of the Invention]
1323000 --~~-Mm 93106285 _ 五、發明說明(3) [0 0 0 6 ]根據本文所述系統與 室結合之裴置,係包括與該 板,該蓋板定義一孔徑,以 之通路"該蓋板遮罩該槽孔 機負載固定室與注入室之間 定室與該注入室間之壓爆。 二容室間的部份開孔,以降 可在該二容室間定義一孔徑 一負載在該二容室間移動。 [0007 ]該蓋板在垂直該槽孔 最大化,以進一步降低該壓 載固定室或該注入室,或該 可縮小到在該負載固定室與 處理該晶圓或該負載所需維 使二容室間,諸如負載固定 法,其步驟可包括:使用一 孔,該蓋板上設一貫穿之孔 以維持對一負載之通路,以 之間移動該負載;以及,使 孔之方向上測量的深度最大 方法’與離子注入機負載固 負載固定室上一槽孔鄰接之 提供對該負載固定室内一負 的一部份,以縮小該離子注 的開度’並因此降低該負載 在一實施例中’該蓋板可遮 低該二容室間的壓爆。該蓋 ,該孔徑可維持一通路,以 或開孔之方向上測量的深度 爆。此裝置可活動接設於該 二容室之任一。該孔徑之尺 該注入室之間或在該二容室 持的最小間隙即可。因此, f與注入室間之壓爆降低之 蓋板遮蓋該負载固定室之一 徑,使該孔徑之尺寸最小化 供在該負载固定室與該真空 該蓋板在垂直該負載固定室 定 蓋 載 入 固 蓋 板 供 可 負 寸 間 可 方 槽 室 槽 [實施方式] [0 0 1 3 ]請參照圖1 ’其中顯示一離子注入機之負載固定, 關 10之概要圖。負載固定室10中可放置一鱼澈10' 疋: 貝載1 2,而且可1323000 --~~-Mm 93106285 _ V. INSTRUCTION DESCRIPTION (3) [0 0 0 6] According to the system and the chamber according to the description of the present invention, the device includes a plate, the cover plate defines an aperture, and the passage " The cover masks the explosion between the fixed chamber and the injection chamber between the load fixing chamber and the injection chamber of the slot machine. A portion of the opening between the two chambers defines a diameter between the two chambers and a load moves between the two chambers. [0007] the cover plate is maximized in the vertical slot to further reduce the ballast fixed chamber or the injection chamber, or the reduction can be made to the load holding chamber and the wafer required to process the wafer or the load Between chambers, such as load-fixing, the steps may include: using a hole, the cover is provided with a through hole to maintain a path to a load to move the load therebetween; and, to measure the direction of the hole The maximum depth method 'provides a negative portion of the fixed chamber of the ion implanter load fixed load chamber to provide a negative portion of the load holding chamber to reduce the opening of the ion implant' and thus reduce the load in an implementation In the example, the cover can cover the explosion between the two chambers. The cover, the aperture maintains a path, or a depth blast measured in the direction of the opening. The device can be movably connected to any of the two chambers. The aperture of the aperture may be the minimum gap between the injection chambers or in the two chambers. Therefore, the pressure-reducing cover plate between the f and the injection chamber covers a diameter of the load-fixing chamber, and the size of the aperture is minimized. The load-fixing chamber and the vacuum cover the vertical cover of the load-fixing chamber. Loading the solid cover for the tank chamber with negative and negative inches [Embodiment] [0 0 1 3 ] Please refer to FIG. 1 ' which shows a schematic diagram of the load fixing of an ion implanter, off 10 . A fish can be placed in the load-fixing chamber 10, 10' 疋: the shell load 1 2, and
1323000 _案號93106285_年月白__ 五、發明說明(4) 閉以使負載1 2隔離在其中。隨後,可將負載1 2從第一狀態 帶入第二狀態。以典型的負載固定室10而言,負載12可為 一晶圓、或一晶圓卡匣,可經由一插入孔1 4插入負載固定 室1 0。負載固定室1 0於插入時係在第一壓力,以下稱為環 境壓力。藉由封閉插入孔14,可以將晶圓或晶圓卡S 12隔 離或密封在負載固定室1 0内,然後可開始負載固定室之抽 空。 [0 0 1 4 ]抽空可持續一預定期間,或到負載固定室1 0内的壓 力抵達預定的設定點壓力為止。抽空期間之後,或當抵達 固定室設定點時,可開啟隔離閥1 6,使負載1 2朝向注入室 1 8。架構隔離閥1 6時,使之可以開啟槽孔2 0,讓晶圓處理 機器手臂2 2可通過槽孔2 0接近負載1 2。機器手臂2 2可從負 載固定室1 0内拾取負載或晶圓1 2,並將晶圓1 2置入注入室 1 8内的位置,以供加工。如前所述,槽孔2 0可比晶圓1 2較 寬,且其高度可為晶圓12厚度的50至100倍左右。當隔離 閥1 6與槽孔2 0開啟時,負載固定室1 0與注入室1 8間的壓力 差可能會導致壓爆或氣爆。 [0 0 1 5 ]現在請參照圖2,其中顯示負載固定室1 0的概要立 面圖。其中,隔離閥1 6為開啟,因此可通過槽孔2 0看見負 載固定室1 0内的負載1 2。槽孔2 0上可放置蓋板2 4,位於負 載固定室1 0與注入室1 8之間。蓋板24定義一孔徑24a,其 大小可極為接近晶圓1 2的尺寸,並可包括供機器手臂2 2從 負載固定室1 0内拾取晶圓1 2之間隙。藉由縮小負載固定室 1 0與值注入室1 8之間的開度,蓋板2 4可在隔離閥1 6與槽孔1323000 _ Case No. 93106285_年月白__ V. Description of the invention (4) Closed to isolate the load 1 2 therein. The load 12 can then be brought from the first state to the second state. In the case of a typical load cell 10, the load 12 can be a wafer, or a wafer cassette, which can be inserted into the load cell 10 via an insertion hole 14. The load fixing chamber 10 is at the first pressure at the time of insertion, hereinafter referred to as the environmental pressure. By closing the insertion hole 14, the wafer or wafer card S 12 can be isolated or sealed in the load holding chamber 10, and then the evacuation of the load holding chamber can be started. [0 0 1 4] The evacuation may continue for a predetermined period of time, or until the pressure in the load-fixing chamber 10 reaches a predetermined set point pressure. After the evacuation period, or when the fixed chamber set point is reached, the isolation valve 16 can be opened to cause the load 12 to face the injection chamber 18. When the isolation valve 16 is constructed, it can be opened to the slot 20, so that the wafer processing robot 22 can approach the load 12 through the slot 20. The robot arm 2 2 can pick up the load or wafer 12 from the load holding chamber 10 and place the wafer 12 into the injection chamber 18 for processing. As previously mentioned, the slot 20 can be wider than the wafer 12 and can be about 50 to 100 times thicker than the thickness of the wafer 12. When the isolation valve 16 and the slot 20 are opened, the pressure difference between the load holding chamber 10 and the injection chamber 18 may cause a pressure explosion or a gas explosion. [0 0 1 5] Referring now to Fig. 2, a schematic elevational view of the load holding chamber 10 is shown. Here, the isolation valve 16 is open, so that the load 1 2 in the load-fixing chamber 10 can be seen through the slot 20. A cover plate 24 can be placed in the slot 20, between the load holding chamber 10 and the injection chamber 18. The cover plate 24 defines an aperture 24a that is sized to closely approximate the size of the wafer 12 and may include a gap for the robot arm 22 to pick up the wafer 12 from within the load holding chamber 10. By narrowing the opening between the load holding chamber 10 and the value injection chamber 18, the cover plate 24 can be in the isolation valve 16 and the slot
1323000 4 » ' 案號 93106285 五、發明說明(5) 2 0開啟時降低進入注入室1 8的氣爆。 [00 16]蓋板24與孔徑24a的輪廓可以變化,以配合使用此 等蓋板與孔徑的設備與加工處理。例如,有些注入機可包 括一晶圓處理室26’如圖1中以虛線所示,介於負載固定 室1 0與注入室1 8之間。如圖1所示,機器手臂2 2可在晶圓 處理室2 6之内。在某些注入機中,晶圓處理室2 6可與注入 室18互通,因此, 發生壓爆。但在其 入室1 8分離的真空 室2 6之間,及晶圓 生壓爆。 負載固定室1 0與晶 他的注入機中,晶 空間,因此,負載 處理室2 6與注入室 圓處理室26間可能會 圓處理室2 6可為與注 固定室1 〇與晶圓處理 1 8之間,都可能會發 [〇〇 17]熟悉此類技術之人士可以理解,設有孔捏24a的蓋 板24 ’其位置係在兩個於互通時可能發生氣爆二容室之 間。因此,當晶圓處理室26為分離的真空空間時,負載固 定室1 〇與晶圓處理室2 6之間,及晶圓處理室2 6與注入室i 8 之間,都可放置一具有孔徑24a的蓋板24,以及如圖丄中以 虛線所示的24’。只要有放置蓋板24時,孔徑24a的尺寸可 以最小化,以於維持晶圓及處理機器手臂或其他晶圓處理 裝置所需的間隙時’同時徹底降低二個容室間的壓爆。 [0018]蓋板24對負載固定室10抽空及注入室18壓力的影 響’顯示如圖3。圖3顯示注入室1 8與負載固定室丨〇未設與 設有蓋板2 4時的注入室壓力曲線28a、28 b及負載固定室抽 空曲線30a、30b。以圖2所示的蓋板24而言,孔徑24a之面 積約為槽孔2 0的2 5 % ’亦即,蓋板2 4可阻斷槽孔2 〇的7 5 %。1323000 4 » ' Case No. 93106285 V. Description of the invention (5) When the 0 0 is turned on, the air explosion entering the injection chamber 18 is lowered. [0016] The profile of the cover plate 24 and the aperture 24a can be varied to accommodate the apparatus and processing of the cover and aperture. For example, some implanters may include a wafer processing chamber 26' between the load holding chamber 10 and the implant chamber 18 as indicated by the dashed lines in FIG. As shown in Figure 1, the robotic arm 22 can be within the wafer processing chamber 26. In some implanters, the wafer processing chamber 26 can be interconnected with the injection chamber 18, and therefore, a burst occurs. However, between the vacuum chambers 26 separated from the chambers 18 and the wafers are pressed. In the load-fixing chamber 10 and the crystallizer, there is a crystal space. Therefore, between the load processing chamber 26 and the injection chamber processing chamber 26, the processing chamber 26 may be treated with the fixed chamber 1 and the wafer. Between 18 and 8, it may be issued [〇〇17] Those who are familiar with such technology can understand that the cover plate 24' provided with the pinch 24a is located in two places where the gas explosion chamber may occur when intercommunicating. between. Therefore, when the wafer processing chamber 26 is a separate vacuum space, between the load fixing chamber 1 and the wafer processing chamber 26, and between the wafer processing chamber 26 and the injection chamber i8, The cover plate 24 of the aperture 24a, and 24', shown in phantom in the figure. As long as the cover 24 is placed, the size of the aperture 24a can be minimized to maintain the gap between the wafer and the processing robot or other wafer processing apparatus while simultaneously reducing the pressure between the two chambers. [0018] The effect of the cover plate 24 on the evacuation of the load holding chamber 10 and the pressure of the injection chamber 18 is shown in FIG. Fig. 3 shows the injection chamber pressure curves 28a, 28b and the load fixed chamber evacuation curves 30a, 30b when the injection chamber 18 and the load holding chamber are not provided with the cover plate 24. With the cover 24 shown in Fig. 2, the area of the aperture 24a is about 25% of the slot 20, i.e., the cover 24 can block 75 % of the slot 2 〇.
1323000 案號 93106285 曰 修正 五、發明說明(6) 请參照注入至壓力曲線2 8 a、2 8 b,可以看出孔徑2 4 a的面 積縮小時,可導致壓爆的減少’如圖3所示的DP,介於無 蓋板24之曲線28a及有蓋板24定位之曲線28b之間。依照選 擇的操作壓力而定’到注入的時間(亦即負載固定室1 〇抽 空的時間加上讓注入室1 8回到操作壓力的回復時間)可縮 短約25%至3 0%。例如,操作壓力為4· 〇E_6時,可看出曲線 2 8a(無蓋板24)上的注入時間約為丨8〇〇秒,而曲線28b(有 蓋板2 4定位)上的注入時間約為丨3 2 5秒。 [0019]圖4顯示在渦輪分子泵(1^1))、低溫泵((:{))、及洞輪1323000 Case No. 93106285 曰Revision 5, invention description (6) Please refer to the injection pressure curve 2 8 a, 2 8 b, it can be seen that when the area of the aperture 2 4 a is reduced, it can lead to the reduction of pressure explosion as shown in Figure 3 The DP shown is between the curve 28a without the cover 24 and the curve 28b with the cover 24 positioned. Depending on the selected operating pressure, the time to injection (i.e., the time during which the load holding chamber 1 is evacuated plus the recovery time for returning the injection chamber 18 to the operating pressure) can be reduced by about 25% to 30%. For example, when the operating pressure is 4·〇E_6, it can be seen that the injection time on curve 28a (without cover 24) is about 〇〇8〇〇 seconds, and the injection time on curve 28b (with cover plate 4 4) It is about 325 seconds. [0019] Figure 4 shows the turbomolecular pump (1^1), cryopump ((:{)), and the wheel
分子/水組合泵(WP)三種不同的泵組態下,用蓋板24阻斷 槽孔20之50%與75%的情況下,進行負載固定室1〇抽空的試 ,釔果。圖4顯示槽孔縮小百分比與所有三種組態之真空 回f時間之間大略為線性關係。從圖中可以看出TMP組態 的空,f時間與外延之工具產能改進為最大,而CP組態 的改進/最小’但所有三種組態的百分比變化都在40%至 6〇%的範圍内。如圖1所示,增加蓋板24的深度d時,可進 一步限制負載固定室1 〇與注入室1 8之間的開度,也進一步 降,麼爆。最大深度d係受晶圓處理需求,諸如晶圓或晶 圓卡E周緣間隙、拾取間隙等的約束。In the case of three different pump configurations of the molecular/water combination pump (WP), when the cover 24 is used to block 50% and 75% of the slot 20, the load-fixing chamber is evacuated and tested. Figure 4 shows a roughly linear relationship between the percentage of slot reduction and the vacuum return time of all three configurations. It can be seen from the figure that the TMP configuration is empty, the f time and extension tool capacity is improved to the maximum, and the CP configuration is improved/minimum' but the percentage change of all three configurations is in the range of 40% to 6〇%. Inside. As shown in Fig. 1, when the depth d of the cover 24 is increased, the opening between the load holding chamber 1 〇 and the injection chamber 18 can be further restricted, and further reduced. The maximum depth d is subject to wafer processing requirements such as wafer or wafer card E peripheral gaps, pick gaps, and the like.
[0 0 2 γ ]以上揭不的方法與系統雖以本發明之較佳實施例作 為顯示與說明’但熟悉此類技術之人士顯然可以理解其中 可作多種修改與改進。蓋板24可使用與所用生產製程相容 許二二又此等製程之材料。蓋板2 4可為活動或永久接 °又;曰 。使用活動式蓋板2 4時,可更換蓋板2 4以配合[0 0 2 γ ] The above-described methods and systems are shown and described with respect to the preferred embodiments of the present invention, but those skilled in the art will appreciate that various modifications and improvements can be made therein. The cover plate 24 can be made of a material that is compatible with the manufacturing process used. The cover plate 2 4 can be movable or permanently connected; When the movable cover 2 4 is used, the cover 2 4 can be replaced to match
第11頁 1323000 案號 93106285 年 月 修正 五、發明說明 晶圓與所 壓鑄固定 [0 0 2 1 ]在 因此,蓋 臂架構變 知的方法 束孔調整 改裝為現 圓處理器 铸容許差 [ 0 0 22 ]或 定室1 0。 2 4係位於 態中是將 顯示的蓋 可活動地 間,諸如 [ 0 0 23 ]前 其他改變 舉之零組 顯示的組 特定的相 擴充、或 因此可以Page 11 1323000 Case No. 93106285 Revised 5, Invention Description Wafer and Die Casting Fixed [0 0 2 1 ] Therefore, the method of changing the cover arm structure is modified to the current round processor casting tolerance [ 0 0 22 ] or the chamber 10 . 2 4 is in the state where the cover will be displayed, such as [0 0 23 ] before the other changes, the zero group is displayed, the specific phase is expanded, or so
(7) 用生產製程的機器手臂架構。與負載固定室孔徑 蓋板比較時,如此可提供未來較高的變換彈性。 一實施例中,蓋板2 4係設置可調整式孔徑2 4 a, 板2 4可保持固定而其孔徑可於晶圓及/或機器手 更時隨之改變。孔徑調整可用各種技術領域中習 為之,並可以與諸如照像機光圈調整裝置與離子 裝置之負載固定室1 0配合使用。此外,蓋板2 4可 有設備。蓋板2 4的使用亦可使負載固定室1 0、晶 22、及/或加工室18在製造中有較大的加工或壓 ,因為蓋板2 4可提供所需的容許差。 者,蓋板2 4可接設在注入室1 8而非接設在負載固 以圖1及圖2所示的典型實施例而言,可看出蓋板 負載固定室1 0的外表面。然而,也可有些設備組 蓋板24設於負載固定室10之内,如圖1中以虛線 板24”。熟悉此類技術之人士可以理解,蓋板24 或永久性地接設在可能發生壓爆的不同容室之 在晶圓處理室與鄰接之容室間,如前所述。 述變化僅為舉例而非獨一性質,本發明仍可實施 。因此,熟悉此類技術之人士可對此處說明與例 件,做細部及安排上的其他改變。因此,圖式中 件安排方式僅為舉例之用,並可加以變化以配合 關實施方式。因此,其中各種項目可加以結合、 另行重新架構而不脫離本發明揭示系統之範圍。 理解以下申請專利範圍不受此處揭示的實施例限(7) The robotic structure of the production process. This provides a higher conversion flexibility in the future when compared to a load-fixed chamber aperture cover. In one embodiment, the cover plate 24 is provided with an adjustable aperture 2 4 a, and the plate 24 can be held stationary and its aperture can be varied with the wafer and/or robot hand. The aperture adjustment can be used in various technical fields and can be used in conjunction with a load holding chamber 10 such as a camera aperture adjustment device and an ion device. In addition, the cover plate 24 can have equipment. The use of the cover plate 24 also allows for greater processing or compression of the load holding chamber 10, the crystal 22, and/or the processing chamber 18 as the cover 24 provides the desired tolerance. The cover plate 24 can be attached to the injection chamber 18 instead of being attached to the load. As shown in the exemplary embodiment shown in Figs. 1 and 2, it can be seen that the cover load supports the outer surface of the chamber 10. However, some device pack covers 24 may also be provided within the load holding chamber 10, as shown in Figure 1 by a dashed board 24". Those skilled in the art will appreciate that the cover 24 may be permanently attached to a possible occurrence. The different chambers of the explosion are between the wafer processing chamber and the adjacent chamber, as described above. The variations are merely examples and not unique, and the invention can be implemented. Therefore, those skilled in the art can The descriptions and examples are made here, and other changes in the details and arrangement are made. Therefore, the arrangement of the middle parts of the drawings is for example only and can be changed to match the implementation. Therefore, various items can be combined and separately The architecture is re-architected without departing from the scope of the disclosed system. It is understood that the scope of the following claims is not limited by the embodiments disclosed herein.
第12頁 1323000 _案號93106285_年月曰 修正_ 五、發明說明(8) 制。各項申請專利範圍可包括特別說明之外的實施方式, 並得根據法律允許之範圍做廣義的解釋。Page 12 1323000 _ Case No. 93106285_ Year Month 修正 Amendment _ V. Invention Description (8) System. The scope of each patent application may include implementations other than those specifically stated, and may be interpreted broadly to the extent permitted by law.
第13頁 1323000 _案號93106285_^年月日 修正_ 圖式簡單說明 [圖式簡單說明] [0 0 0 8 ]以下附圖說明本發明系統與方法之若干例舉實施 例,圖中相同的參考標號係指稱相同元件,所述實施例僅 屬舉例性質,非用以限制本發明。附圖包括: [0 0 0 9 ]圖1為具有真空氣導限制孔徑之離子注入機負載固 定室概要圖; [0010]圖2為圖1所示負載固定室之概要立面圖; [0 0 11 ]圖3負載固定室抽空曲線與注入室壓力曲線示意 圖;以及Page 13 1323000 _ Case No. 93106285_^ Year Month Day Correction _ Schematic Description of the Drawing [Simple Description of the Drawings] [0 0 0 8] The following drawings illustrate several exemplary embodiments of the system and method of the present invention, the same in the drawings The reference numerals are referred to as the same elements, and the embodiments are merely exemplary in nature and are not intended to limit the invention. The drawings include: [0 0 0 9 ] FIG. 1 is a schematic view of an ion implanter load fixing chamber having a vacuum air conduction limiting aperture; [0010] FIG. 2 is a schematic elevational view of the load fixing chamber shown in FIG. 1; 0 11 ] Figure 3 Schematic diagram of the load-carrying chamber evacuation curve and the injection chamber pressure curve;
[0 0 1 2 ]圖4為真空回復時間示意圖。[0 0 1 2 ] FIG. 4 is a schematic diagram of vacuum recovery time.
[主 要 元 件符號說 明 ] 10 負 載 固定室 24 蓋 板 12 負 載 /晶圓/晶 圓 卡匣 24* 蓋 板 14 插 入 孔 24" 蓋 板 16 隔 離 閥 24a 孔 徑 18 注 入 室 2 6 晶 圓 處 理 室 20 槽 孔 d 蓋 板 深 度 22 晶 圓 處理機器 手 臂 28a、 b注 入 室 壓 力 曲 線 3 0a、 b負 載 固 定 室 抽 空曲線[Main component symbol description] 10 Load fixed chamber 24 Cover 12 Load/wafer/wafer cassette 24* Cover 14 Insert hole 24" Cover 16 Isolation valve 24a Aperture 18 Injection chamber 2 6 Wafer processing chamber 20 slot Hole d Cover depth 22 Wafer processing robot arm 28a, b injection chamber pressure curve 3 0a, b load fixed chamber evacuation curve
第14頁Page 14
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW93106285A TWI323000B (en) | 2004-03-10 | 2004-03-10 | Load lock vacuum conductance limiting aperture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW93106285A TWI323000B (en) | 2004-03-10 | 2004-03-10 | Load lock vacuum conductance limiting aperture |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200531126A TW200531126A (en) | 2005-09-16 |
| TWI323000B true TWI323000B (en) | 2010-04-01 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW93106285A TWI323000B (en) | 2004-03-10 | 2004-03-10 | Load lock vacuum conductance limiting aperture |
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| Country | Link |
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| TW (1) | TWI323000B (en) |
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| TW200531126A (en) | 2005-09-16 |
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