TWI321807B - Amorphous silicon deposition for sequential lateral solidification - Google Patents
Amorphous silicon deposition for sequential lateral solidification Download PDFInfo
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- 238000007711 solidification Methods 0.000 title description 16
- 230000008023 solidification Effects 0.000 title description 16
- 229910021417 amorphous silicon Inorganic materials 0.000 title description 9
- 230000008021 deposition Effects 0.000 title description 5
- 229910052732 germanium Inorganic materials 0.000 claims description 37
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 37
- 238000000034 method Methods 0.000 claims description 32
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- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 5
- 239000010408 film Substances 0.000 description 5
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- 229910052707 ruthenium Inorganic materials 0.000 description 5
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- KZNMRPQBBZBTSW-UHFFFAOYSA-N [Au]=O Chemical compound [Au]=O KZNMRPQBBZBTSW-UHFFFAOYSA-N 0.000 description 2
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- 238000005054 agglomeration Methods 0.000 description 1
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
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- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
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Description
1321807 五、發明說明（l) 發明領域 本發明係關於一種非晶矽沈積方法，更特別地是，係 有關於-種非晶♦沈積方法’該方法係適用於循序橫向固 化。 ’、 發明背景 t、薄且低功率消耗的平板顯示器裝置，於消費市場 係為尚度需要。平板顯示器裝置可區分為二基本型：一 種是發光顯示器裝置，該發光顯示器裝置係發出光線以顯 示影像，且另一種是光接收顯示器裝置，該光接收顯示器 裝置使用外部光源以顯示影像。電漿顯示器面板（plasma display panels, PDP)，場發射顯示（field emission display, FED)裝置，電致發光顯示器（Electr〇_ luminescence Display)裝置，皆為發光顯示器，液晶顯 不器為光接收顯示器的實例。該液晶顯示器廣泛用於膝上 型電腦（Laptop computer)與桌上型監視器（Desktop computer)，原因是具有優越的解析度，色彩範圍，與影 像品質。 液晶顯示Is裝置，使用該液晶模組.光的異向性 (optical anisotropy)與偏極性（p〇larization)，以製 造影像。液晶分子因為它既長且薄的外型，所以有一定的 對齊方向（alignment orientation) > 該對齊方向可 藉一外加電場控制，換言之，當一外加電場改變時’該液BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an amorphous germanium deposition method, and more particularly to an amorphous amorphous deposition method which is suitable for sequential lateral solidification. BACKGROUND OF THE INVENTION Flat panel display devices with thin, low power consumption are in demand in the consumer market. The flat panel display device can be divided into two basic types: one is an illuminated display device that emits light to display an image, and the other is a light receiving display device that uses an external light source to display an image. Plasma display panels (PDP), field emission display (FED) devices, and electroluminescence displays (Electr〇_ luminescence Display) devices, all of which are light-emitting displays, and liquid crystal displays are light-receiving displays. An example. The liquid crystal display is widely used in laptop computers and desktop computers because of its superior resolution, color range, and image quality. The liquid crystal display Is device uses the liquid crystal module to optically anisotropy and p〇larization to produce an image. Since the liquid crystal molecule has a long and thin shape, it has a certain alignment orientation > the alignment direction can be controlled by an applied electric field, in other words, when an applied electric field changes, the liquid
1321807 五、發明說明（2) 晶分子的對齊方向也改變。因為光的異向性（〇pt ical anisotropy)’所以入射光的折射作用（refracti〇n)，隨 液晶分子的對齊方向而定。因此，藉由適當地控制該外加 電場’可製造一所要的發光影像。 當不同的液晶顯示器裝置型態，早已廣為周知，主動 矩陣式（act ive matrix)液晶顯示器 （AM-LCD)，其具有 排列於一陣列的薄膜電晶體（th i η film transistors， TFTs)與像素電極（pixel electrodes)，可能為最常見 的。這是因為主動矩陣式（active matrix)液晶顯示器 (LCD)可以一合理價格製造高品質影像。 液晶顯示器的薄膜電晶體，一般包括多晶石夕 (polycrystalline Silicon，p-Si)或非晶矽（amorphous silicon, a-Si )為一作用層（active layer)。因為非晶石夕 (a-S i )可在低溫沈積，以便於一玻璃基板上形成—薄 膜’該工法係廣泛用於液晶顯示器交換裝置 （Switching elements)。然而，非晶梦(amorphous silicon, a-Si)於 應用在大面積液晶顯示器裝置卻產生問題，因為非晶石夕 (amorphous silicon, a-Si)的電性特徵有問題， 相對於非晶石夕（a m 〇 r p h 〇 u s s i 1 i c ο η )，當用於液晶顯示器 交換裝置 （Switching elements)時，多晶石夕 (polycrystalline Silicon, p-Si)提供更快的顯示回應 時間，因此，多晶矽（polycrystalline Silicon， p-Si)1321807 V. INSTRUCTIONS (2) The alignment direction of crystal molecules also changes. Because of the anisotropy of light, the refraction of incident light depends on the alignment direction of the liquid crystal molecules. Therefore, a desired luminescent image can be produced by appropriately controlling the applied electric field '. When different liquid crystal display device types have been widely known, an active matrix liquid crystal display (AM-LCD) having thin film transistors (TFTs) arranged in an array and Pixel electrodes are probably the most common. This is because active matrix liquid crystal displays (LCDs) can produce high quality images at a reasonable price. A thin film transistor of a liquid crystal display generally includes a polycrystalline silicon (p-Si) or an amorphous silicon (a-Si) as an active layer. Since amorphous austenite (a-S i ) can be deposited at a low temperature to form a thin film on a glass substrate, the method is widely used for liquid crystal display switching devices. However, amorphous silicon (a-Si) is problematic in large-area liquid crystal display devices because of the electrical characteristics of amorphous silicon (a-Si), which is relative to amorphous stone. On the eve (am 〇rph 〇ussi 1 ic ο η ), when used in liquid crystal display switching devices, polycrystalline silicon (p-Si) provides faster display response time, therefore, polycrystalline germanium ( Polycrystalline Silicon, p-Si)
[ 1321807 五、發明說明（3) 更適用於大面積液晶顯示器裝置，例如大型膝上型電腦 (Laptop computer)與電視機，該大面積液晶顯示器裝 置要求更大的場效應遷移率（Field Effect mobility)。 於該液晶顯示器的應用，多晶石夕（polycrystalline Silicon，p-Si)的形成期間，最常使用雷射處理技術，諸 如，多晶石夕（polycrystalline Silicon, p-Si)同時，可 被用於該薄膜電晶體交換裝置的驅動電路。 圖1為一結構圖，該結構圖顯示一主動矩陣式液晶顯 示器的主要部件，於圖1，該液晶顯示器裝置包括位於一. 基板2的驅動電路3與一主動矩陣4，該主動矩陣4係位於該 基板2的中央部位，而該閘極驅動電路3 a與該資料驅動電 路3 b，係分別位於該基板2的左方部位與上方部位，於該 主動矩陣4，複數個閘極線6係以一橫向方向沈積，且複數 個資料線8係以一縱向的方向（垂直於該閘極線的方向）沈 積。閘極線6與資料線8，成對地定義複數個像素區域。該 閘極驅動電路3 a轉移位址信號到該閘極線6，且該資料驅 動電路3b轉移顯示信號到該閘極線6，且該資料驅動電路 3b轉栘顯示信號到該資料線，其係與位址信號同步，複數 個電性獨立的像素電極1 0排列於像素區域内。於閘極線6 與資料線8的交叉處，係為複數個薄膜電晶體（TFTs)"T”， 該薄膜電晶體（TFTs)” Τπ對應於一特定像素電極1 0。[ 1321807 V. INSTRUCTIONS (3) More suitable for large-area liquid crystal display devices, such as large laptop computers and television sets, the large-area liquid crystal display device requires greater field effect mobility (Field Effect mobility) ). For the application of the liquid crystal display, during the formation of polycrystalline silicon (p-Si), laser processing techniques, such as polycrystalline silicon (p-Si), can be used at the same time. The driving circuit of the thin film transistor switching device. 1 is a structural diagram showing the main components of an active matrix liquid crystal display. In FIG. 1, the liquid crystal display device includes a driving circuit 3 on a substrate 2 and an active matrix 4, the active matrix 4 Located in the central portion of the substrate 2, the gate driving circuit 3a and the data driving circuit 3b are respectively located at the left portion and the upper portion of the substrate 2, and the plurality of gate lines 6 in the active matrix 4. The deposition is performed in a lateral direction, and a plurality of data lines 8 are deposited in a longitudinal direction (perpendicular to the direction of the gate line). The gate line 6 and the data line 8 define a plurality of pixel regions in pairs. The gate driving circuit 3a transfers the address signal to the gate line 6, and the data driving circuit 3b transfers the display signal to the gate line 6, and the data driving circuit 3b switches the display signal to the data line. In synchronization with the address signal, a plurality of electrically independent pixel electrodes 10 are arranged in the pixel region. At the intersection of the gate line 6 and the data line 8, there are a plurality of thin film transistors (TFTs) "T", and the thin film transistors (TFTs) Τπ correspond to a specific pixel electrode 10.
第8頁 1321807 五、發明說明（4) 該閘極驅動電路3 a與該資料驅動電路3b，係電性連接 於一控制信號輸入埠i 2 ’該控制信號輸入埠！ 2係相互連接 於一控制器（未顯示於圖中），該控制器係控制該閘極驅動 電路3a與該資料驅動電路3b 〇該閘極驅動電路3樓該資料 驅動電路3b’包括互補金氧半（CMOS)電晶體，該電晶體係 當作反相器（inverter)，該反相器係轉移信號到該像素電 極1 0。換言之’該閘極驅動電路3a與該資料驅動電路3b， 為矽薄膜互補金氧半（CMOS)結構，該結構有一位移暫存器 (shift register)，該位移暫存器可為互補（P型與n型）或 單一傳導性薄膜電晶體的靜態或動態電路。 5 類似於圖1的一主動矩陣液晶顯示器裝置，其具有— 主動矩陣4與一驅動電路3，該驅動電路有一低量的開路狀 態（of f state)漏電流（1 eakage current)，係為十分重 要。此外，用於薄膜電晶體（TFT)開關與互補金氧半 (CMOS)電晶體的多晶石夕（polycrystalline Silicon)，有 許多結晶顆粒，因此在顆粒間有顆粒界限（gra i η boundaries)。該些顆粒與顆粒界限，阻斷載子移動，因 而造成主動矩陣元素劣化（deterioration)。若該顆粒稍 大，且該顆粒界限係為更規則地分佈於該多晶矽 (polycrystalline Silicon)，那麼該場效遷移率（Field effect mobility)增加。因此，一石夕結晶法（silicon crystallization method)，該石夕結晶法製造大顆粒結 晶，，係為一重要課題。Page 8 1321807 V. Inventive Description (4) The gate driving circuit 3a and the data driving circuit 3b are electrically connected to a control signal input 埠i 2 '. The two series are connected to each other (not shown in the figure), and the controller controls the gate driving circuit 3a and the data driving circuit 3b. The gate driving circuit 3rd floor and the data driving circuit 3b' include complementary gold. An oxygen half (CMOS) transistor, which acts as an inverter that transfers a signal to the pixel electrode 10. In other words, the gate driving circuit 3a and the data driving circuit 3b are 矽 film complementary metal oxide half (CMOS) structures, and the structure has a shift register, and the displacement register can be complementary (P type) Static or dynamic circuits with n-type) or single conductive thin film transistors. 5 is similar to an active matrix liquid crystal display device of FIG. 1 having an active matrix 4 and a driving circuit 3 having a low amount of f state leakage current (1 eakage current) important. In addition, polycrystalline silicon for thin film transistor (TFT) switching and complementary gold-oxygen (CMOS) transistors has many crystalline particles, so there are grain boundaries between the particles. These particles are bounded by the particles, blocking the movement of the carriers, thereby causing degradation of the active matrix elements. If the particles are slightly larger and the particle boundaries are more regularly distributed in the polycrystalline silicon, the field effect mobility increases. Therefore, it is an important subject to produce a large particle crystal by a silicon crystallization method.
第9頁 [S] 1321807 五、發明說明（δ) ' 為解決上述問題，必須控制該晶體場分佈（c r y s t a 1 field distribution)或是必須使用一單一晶體裝置’ 形成一單一結晶石夕’（c r y s t a 1 1 i n e silicon)層於一玻璃基板上，其藉由一循序橫向固化 (sequential lateral solidification， SLS)的方法，該 方法係描述於司伯史利，克勞德，與殷等人於1 9 9 7年發表 於材料研究學報，第452期第956-957頁，（Robert S. Sposilli， M.A. Crowder, and James S. Im, Mat.Page 9 [S] 1321807 V. Description of the invention (δ) ' In order to solve the above problem, it is necessary to control the crystal field distribution (crysta 1 field distribution) or it is necessary to use a single crystal device to form a single crystal stone eve (crysta 1 1 ine silicon) is layered on a glass substrate by a sequential lateral solidification (SLS) method described in Sibo Shili, Claude, and Yin et al. 9 7 years published in the Journal of Materials Research, 452th, pp. 956-957, (Robert S. Sposilli, MA Crowder, and James S. Im, Mat.
Res. Soc. Symp. Proc. Vo 1. 4 5 2, 956-957, 1 997)。該 技術係利用一事實，該事實為矽結晶顆粒易於從介於液態 與固態矽的介面間橫向生長。基於該原則，該參考文獻教 示結晶非晶矽層，係藉由控制一移動雷射光的該雷射能量 與照射範圍，以便製造矽結晶顆粒，該矽結晶顆粒具有一 事先決定的長度，如下列舉實例顯示。因此，循序橫向固 化（s e q u e n t i a 1 1 a t e r a 1 s ο 1 i d i f i c a t i ο η，S L S ) ’ 其導引 矽結晶顆粒的橫向生長，可藉由使用雷射能量形成單晶 (single-crystal)石夕薄膜。 圖2係為一顯示顆粒尺寸相對於雷射能量密度的關係 圖，且圖3A到圖3C顯示橫截面，該橫截面係用以解釋形成 多晶矽（p-S i)薄膜的機制，該薄膜係由大顆粒構成。如 圖3A到圖3C顯示，一緩衝層1 2與一非晶矽層1 4，係循序形 成於一遶明基板1。Res. Soc. Symp. Proc. Vo 1. 4 5 2, 956-957, 1 997). This technique takes advantage of the fact that the ruthenium crystal particles tend to grow laterally from between the liquid and solid ruthenium interfaces. Based on this principle, the reference teaches a crystalline amorphous germanium layer by controlling the laser energy and the irradiation range of a moving laser light to produce germanium crystal particles having a predetermined length, as exemplified below. An example is shown. Therefore, the sequential lateral solidification (s e q u e n t i a 1 1 a t e r a 1 s ο 1 i d i f i c a t i ο η, S L S ) ′ which guides the lateral growth of the ruthenium crystal particles, can form a single-crystal stone film by using laser energy. Figure 2 is a graph showing the relationship between particle size and laser energy density, and Figures 3A to 3C show cross-sections for explaining the mechanism of forming a polycrystalline germanium (pSi) film which is large. Particle composition. As shown in FIG. 3A to FIG. 3C, a buffer layer 12 and an amorphous germanium layer 14 are sequentially formed on a substrate 1 .
第10頁 1321807 五、發明說明（6) 參考圖2與圖3A，該第一區域為一部份融解的體系方 法，當一雷射光束，該光束具有位於第一區域内的一能量 密度，照射於該非晶矽層1 4，只有該非晶矽層1 4的表 層π A1'部份融解，因此，於一退火過程，複數個小顆 粒” G1π以垂直方向形成。 圖2的第二區域，顯示一雷射光束，該光束具有一能 量密度，該能量密度幾乎融解整塊區域。當一雷射光束， 該光束具有一能量密度於第二區域，該雷射光束照射於該 非晶矽層1 4，幾乎所有的該非晶矽融解，請參考圖3Β。更 進一步地，複數個晶種1 3之中的晶種，係形成於一非晶矽 層1 4與一緩衝層1 2間。由於該晶種1 3，該矽顆粒結晶傾向 於水平生長，然而，因為複數個晶種1 3係隨機地分佈於該 透明基板1，即使顆粒結晶” G2”稍大，獲得複數個相同大 小顆粒結晶的"G2”，是很困難的。 圖2的第三區域，顯示一完整融解區域，當一雷射光 束，該光束具有一能量密度，該能量密度於第三區域，該 雷射光束照射於該非晶矽層1 4，所有的該非晶矽都融解， 請參考圖3C。接著，同質的核形成（nucleation)反應係於 該退火製程進行，因此，複數個核種15，係形成於該融解 的矽，且細微顆粒” G3"也形成。Page 10 1321807 V. Description of the Invention (6) Referring to Figures 2 and 3A, the first region is a partially melted system method, when a laser beam has an energy density in the first region, Irradiating the amorphous germanium layer 14 , only the surface layer π A1 ′ of the amorphous germanium layer 14 is melted. Therefore, in an annealing process, a plurality of small particles “G1π are formed in a vertical direction. The second region of FIG. 2 , Displaying a laser beam having an energy density that almost melts the entire area. When a laser beam has an energy density in a second region, the laser beam is irradiated onto the amorphous layer 1 4. Almost all of the amorphous germanium is melted, please refer to Fig. 3. Further, the seed crystal among the plurality of seed crystals 13 is formed between an amorphous germanium layer 14 and a buffer layer 12. The seed crystal 13 has a tendency to grow horizontally, however, since a plurality of seed crystals 13 are randomly distributed on the transparent substrate 1, even if the particle crystal "G2" is slightly larger, a plurality of crystals of the same size are obtained. "G2" is very hard. The third region of FIG. 2 shows a complete melting region. When a laser beam has an energy density, the energy density is in a third region, and the laser beam is irradiated onto the amorphous germanium layer 14, all of which is non- The crystals are melted, please refer to Figure 3C. Next, a homogenous nucleation reaction is carried out in the annealing process. Therefore, a plurality of nucleus species 15 are formed in the melted ruthenium, and fine particles "G3" are also formed.
第11頁 i S ] 1321807 五、發明說明（7) 鑑於以上所提的矽結晶化機制（s i 1 i con crystallization mechanism)，適當的雷射能量密度可由 實驗得知，且適當的雷射能量密度的照射區域，可以一製 程窗（process window)參考。 圖4以圖說明循序橫向固化（SLS)的方法。當一第一雷 射光東，該第一雷射光束具有一能量密度，該能量密度完 全融解非晶石夕層（amorphous silicon layer)20，該非晶 矽層係由一第一完全融解區域π I”注入，更進一步地，複 數個晶種2 4係形成於介面2 4，該介面2 4位於固相（s ο 1 i d phase)非晶石夕與液相（s ο 1 i d p h a s e )非晶石夕間，原因是 液固相接觸（liquid-solid phase contact)。於退火過 程，複數個晶種2 4傾向於橫向生長（相反於圖4的垂直方 向），因此長出複數個第一結晶粒（grains)26 ，更進一步 地，於退火過程’複數個細微結晶粒（a i ns ) 2 8，可在接 近第一融解區域” Γ的中間形成，因此，該第一結.晶粒 (grains)2 6將該區域切割成兩部份。 於形成第〆結晶粒（grains)2 6後’一第二雷射光束具 有一能量密度’該能量密度完全融解所照射的矽層。該第 二雷射光束，具·有與第一雷射光束相同的能量密度與光束 寬度。於該第二雷射光束照射該基板2 2前，該第二雷射光 束已被移除，使得該第一融解區域"I ”的底部（第I I部份） ，與該細微結晶粒（grains) 28，會被照射到。第二雷射光Page 11 i S ] 1321807 V. INSTRUCTIONS (7) In view of the above-mentioned si 1 i con crystallization mechanism, the appropriate laser energy density can be experimentally known and the appropriate laser energy density The illuminated area can be referenced by a process window. Figure 4 illustrates the method of sequential lateral solidification (SLS). When a first laser beam is east, the first laser beam has an energy density, and the energy density completely melts an amorphous silicon layer 20, which is formed by a first complete melting region π I "Injection, further, a plurality of seed crystals 24 are formed in the interface 24, and the interface 24 is located in the solid phase (s ο 1 id phase) amorphous sap and liquid phase (s ο 1 idphase ) amorphous stone In the evening, the reason is liquid-solid phase contact. During the annealing process, a plurality of seed crystals 24 tend to grow laterally (in contrast to the vertical direction of FIG. 4), thus growing a plurality of first crystal grains. (grains) 26, further, in the annealing process, 'a plurality of fine crystal grains (ai ns ) 2 8 can be formed in the middle of the first melting zone ,, therefore, the first junction. Grains 2 6 Cut the area into two parts. After the formation of the second grain of the grain 26, a second laser beam has an energy density which completely melts the irradiated layer of germanium. The second laser beam has the same energy density and beam width as the first laser beam. Before the second laser beam illuminates the substrate 2 2, the second laser beam has been removed, such that the bottom portion (Part II) of the first melting region "I", and the fine crystal grain ( Grains 28, will be illuminated. Second laser light
第12頁 1321807 五、發明說明（8) 束第二次照射完全融解第"I Γ部份，且再一次融解該第一 結晶粒（grains)。於退火過程，頂部區域"I I I"的第一細 微結晶粒（g r a i n s ) 2 6，傾向橫向生長，直到它形成一單一 結晶粒（gr a i η) 3 0，換言之，該單一結晶粒3 0係藉由重覆 第一與第二雷射光束照射，及退火製程形成。 於上述所提循序橫向固化（SLS)製程，位於第一與第 二雷射光束照.、射之間的該距離，係得利於位於頂部區域 (top area)u hi”的第一結晶粒（grains)26橫向生長長 度，該長度常指作一平移距離（translation distance)， 藉由調整該平移距離，該細微結晶粒 （grains )28必須自 第一雷射光束寬度” Iπ的中段移除。 舉例而言，一雷射光束，其具有一 1到3釐米 (millimeters)的光束寬度，可被利用且一 90 %的覆蓋率 (overlapping ratio)為適當，該非晶石夕層係通常以一 500 埃（1埃=1 0 _1G公尺）的厚度形成。若該非晶矽層厚度大於 5 0 0埃，則必須用較大雷射能量密度的雷射光束，才能融 解該較厚的非晶矽，該非晶矽將會增加製造成本，且可能 減慢該製程，但於所製造該薄膜電晶體的特性上並無增 進。因此，當沈積該非晶矽（a-S i )以注入該多晶矽時，該 非晶矽層應維持一厚度，該厚度介於5 0 0到6 0 0埃間。 因為循序橫向固化（SLS)結晶法利用一雷射光束，該Page 12 1321807 V. INSTRUCTIONS (8) The second shot completely melts the "I Γ part, and melts the first grain again. During the annealing process, the first fine grain of the top region "II I" 2 tends to grow laterally until it forms a single crystal grain (gr ai η) 30 , in other words, the single crystal grain 3 0 It is formed by repeating the irradiation of the first and second laser beams and the annealing process. In the above-mentioned sequential lateral solidification (SLS) process, the distance between the first and second laser beams is obtained, which is advantageous for the first crystal grain located in the top area u hi" Grains 26 lateral growth length, often referred to as a translation distance, by adjusting the translational distance, the fine grain 28 must be removed from the middle of the first laser beam width "Iπ. For example, a laser beam having a beam width of 1 to 3 centimeters can be utilized and a 90% coverage ratio is appropriate, typically a 500 Å layer. The thickness of angstroms (1 angstrom = 1 0 _1 G metre) is formed. If the thickness of the amorphous germanium layer is greater than 500 Å, it is necessary to use a laser beam having a large laser energy density to melt the thick amorphous germanium, which will increase the manufacturing cost and may slow down the Process, but there is no improvement in the properties of the film transistor produced. Therefore, when the amorphous germanium (a-S i ) is deposited to implant the polysilicon, the amorphous germanium layer should maintain a thickness between 500 and 600 Å. Because a sequential lateral solidification (SLS) crystallization method utilizes a laser beam,
第13頁 1321807 五、發明說明（9) 雷射光束具有一能量密度足以完全融解該矽層，所以該非 晶矽層厚度係為一重要課題。若該非晶矽層具有一約5 0 0 埃的厚度’於循序橫向固化（SLS)結晶時，會產生結晶缺 陷。當該平移距離係為一短缺陷（sh〇rt defects)時，例 如粒狀現象（pilling phenomenon)及結塊 (agglomeration)現象可能發生，同時製程窗的範圍 (range )會減少。Page 13 1321807 V. INSTRUCTIONS (9) The laser beam has an energy density sufficient to completely melt the layer, so the thickness of the layer is an important issue. If the amorphous germanium layer has a thickness of about 50,000 Å in sequential lateral solidification (SLS) crystallization, crystal defects may occur. When the translational distance is a short defect, for example, a pilling phenomenon and an agglomeration phenomenon may occur, and the range of the process window may be reduced.
圖5說明在非晶矽層的厚度為5 〇 〇埃時，於循序橫向固 化期間之雷射能量密度。於循序橫向固化中，雷射能量密 為410mJ/cm2,來形成單晶矽，組成製成窗的平移距 離此夠係在〇. 05到〇. 9微米之間的範圍。 来日#在雷射能量密度為425mJ/cm2,若平移距離大於〇.95ί 1、访，如圖5所顯示，會導至於矽變成了多晶矽而不是單 離丨认—方面’在雷射能量密度為425mJ/cm2，若平移3 矽丫制·!. 3微米時，會導至於具有圓塊狀（dome)缺陷的晶 一個办制為粒狀及結塊。據此，5 0 0埃厚度的非晶矽具有 乍1程窗以及其係容易遭遇到缺陷。Figure 5 illustrates the laser energy density during sequential lateral solidification when the thickness of the amorphous germanium layer is 5 〇 〇. In the sequential lateral solidification, the laser energy density is 410 mJ/cm2 to form a single crystal germanium, and the translation distance of the formed window is sufficient to be in the range of 〇. 05 to 〇. 9 μm. To the day # in the laser energy density is 425mJ / cm2, if the translation distance is greater than 〇.95ί 1, visit, as shown in Figure 5, will lead to the 矽 become polycrystalline 矽 instead of 单 丨 方面 方面 方面 方面 方面 方面The density is 425mJ/cm2, and if it is translated by 3 ··!. 3 microns, it will lead to a grain with a dome defect and a grain and agglomerate. Accordingly, the amorphous germanium having a thickness of 500 Å has a 程1 window and its system is susceptible to defects.
發明概要 循序所述，本發明係針對非晶石夕沈積的方法，以 多個：：固化來貫質上防止由於相關技藝所帶來的-夕1固u上的問題與限制。SUMMARY OF THE INVENTION As described in the foregoing, the present invention is directed to a method for depositing amorphous slabs, which prevents problems and limitations due to related art by a plurality of:: curing.
1321807 五、發明說明（ίο) 本發明的其一優點是提供一個用於循序橫向固化非晶 矽沈積的方法，以增加製程窗。 本發明的另一項優點是提供一個用於循序橫向固化非 晶矽沈積的方法，以提升製造的產出與產品的穩定度。 本發明其它的特徵及優點在以下的内文將會說明，並 且從内文的說明，其係清楚的揭露，或亦可以由本發明的 實例中學習而了解。本發明的目的以及其它的優點，經由 所揭露的說明書與圖式，其所特別指出來的方法，將會得 到了解與獲知。 為達成這些及其它的優點，以及依據本發明的目的， 以具體之實施例及深廣的說明，本發明用於循序橫向固化 非晶矽沈積的方法，包含在一個透明基板上，形成一個緩 衝層之步驟；在緩衝層上，沈積一個厚度為60 0至200 0埃 (6 0 0至9 0 0埃之間是有益處的）之間的非晶矽；使用具有可 完全融解之能量密度的雷射光束，反覆照射非晶矽，以使 得該層完全的融解；以及在一平移距離，移動雷射光束， 以進行下一次的雷射光束照射。 上述所提及的本發明方法，進一步包含在雷射光束照 射之後，將已融解的石夕層退火（annealing)，以形成單晶1321807 V. SUMMARY OF THE INVENTION (I) An advantage of the present invention is to provide a method for sequentially laterally solidifying amorphous germanium deposition to increase the process window. Another advantage of the present invention is to provide a method for sequential lateral solidification of amorphous germanium deposits to enhance manufacturing throughput and product stability. The other features and advantages of the invention will be apparent from the description and appended claims. The objects and other advantages of the invention will be apparent from the description and appended claims. To achieve these and other advantages, and in accordance with the purpose of the present invention, the present invention is directed to a method for sequentially and laterally solidifying amorphous germanium deposition, comprising a buffer layer formed on a transparent substrate, in accordance with specific embodiments and broad description. a step of depositing an amorphous germanium between 60 0 and 200 angstroms (a benefit between 600 and 900 angstroms) on the buffer layer; using an energy density that is fully meltable The laser beam repeatedly illuminates the amorphous crucible to completely melt the layer; and at a translational distance, the laser beam is moved for the next laser beam illumination. The above-mentioned method of the present invention further comprises annealing the molten layer after the laser beam is irradiated to form a single crystal.
第15頁 1321807 發明說明（11) 石夕層。雷射能量密度的範圍是從之間，而 最大的平移距離的範圍是從3〇. 〇4至〇. 1微米之間。最有益 處的是’非晶>5夕沈積在緩衝層的厚度係1〇〇〇埃。 下文的一般性的說明以及詳細的揭露，皆係可模擬的 與明辯的，其目的是對本發明提供進一步的解釋。 、所=之圖式，提供進一步對本發明的了解，其皆併入 於本申請案成為構成的一部份，配合著說明書，來說明本 發明的具體實施例，以當作為對本發明所具原理上的解 發明詳細說明 參考之資料將以詳細方式製成，以解釋 例’範例在附隨之圖式中顯示出來，在可能之下，類；： 參考標號會在圖式中使用，以參照到相同或近似的組件。 圖6顯不一關係圖，其依據本發明，說明在非晶矽層 ^厚度為1 00 0埃時，於循序橫向固化期間之雷射能量密 度’其能夠作成（frame)製程f。雷射能量密度為31〇 時，最大平移距離係〇. 2微米，以及最小平移距離係 旧〇5微米。415 mj/cm2的雷射能量密度相對應於〇 6微米的 =大，，，離與〇. 〇4微米的最小平移距離；45〇 的. 田射能！密度相對應於〇.8微米的最大平移距離與〇·〇4微Page 15 1321807 Description of invention (11) Shi Xi layer. The range of laser energy density is from between, and the maximum translational distance ranges from 3〇.〇4 to 〇.1 micron. The most beneficial is that the thickness of the amorphous layer deposited on the buffer layer is 1 〇〇〇. The following general description and detailed disclosure are intended to be illustrative and illustrative, and are intended to provide further explanation of the invention. The present invention is to be understood as being a part of the present invention, which is incorporated herein by reference to the specification in the specification DETAILED DESCRIPTION OF THE INVENTION The reference material will be made in a detailed manner, to explain the example 'examples are shown in the accompanying drawings, where possible, classes;: reference numerals will be used in the drawings for reference To the same or similar components. Fig. 6 is a diagram showing the relationship of the laser energy density during sequential lateral solidification in the case where the thickness of the amorphous germanium layer is 100 Å, which can be made into a frame process f. When the laser energy density is 31 ,, the maximum translation distance is 微米 2 μm, and the minimum translation distance is 5 μm. The laser energy density of 415 mj/cm2 corresponds to 〇 6 μm = large,, and 最小. 〇 4 μm minimum translation distance; 45 〇. Field energy! The density corresponds to a maximum translation distance of 〇.8 μm and 〇·〇4 micro
1321807 五、發明說明（12) 米的最小平移距離；515 mJ/cm的雷射能量密度相對應於 1 · 0微米的最大平移距離與0. 1微米的最小平移距離。 由圖5與圖6的比較顯示一較大的製程窗。主要的係由 於非晶石夕層被沈積在厚度為1 0 0 0埃（大於傳統技藝）的製程 窗，其是更寬的範圍。甚且，例如為粒狀及結塊的缺陷， 較傳統技藝，常發生在短的平移距離。例如，當4 i 5 m J / cm暂射能量的雷射光束照射矽層，以形成單結晶梦 時’缺陷會發生在平移距離為〇.〇4^t米以下。據此，製程 窗的寬度增加，再且，縱然非晶矽比傳統技藝的來得更 大’而雷射光束之能量消耗並沒有大量的增加。 圖7顯示一關係圖，說明傳統技藝與發本發明就轉移 特徵之比較。當閘極電壓V g，以一固定比例緩緩的從-1 5 V 增大至+ 20V時’流經主動式通道層（active channel layer)的汲極電流i被量測。再者，汲極電壓v戮定在 〇. 1 V與1 0 V ( V d= 〇. 1 ν及V d= 1 0 V )，這些轉移特徵都被量測。 傳統技藝的非晶矽層是5 〇 〇埃的厚度，而本發明的非晶矽 層是1 0 0 0埃的厚度。 如圖7所顯示L當汲極電壓V在0. 1 V，在使用厚度為 5 0 0埃的傳統矽時，薄膜電晶體的場效應遷移率係 230cm2/V.s。反觀，當汲極電壓ν在10V，在所發明之厚度 為1 00 0埃的矽時，薄膜電晶體的場效應遷移率係1321807 V. Description of invention (12) Minimum translational distance of meters; laser energy density of 515 mJ/cm corresponds to a maximum translational distance of 1 μm and a minimum translational distance of 0.1 μm. A comparison of Figure 5 and Figure 6 shows a larger process window. The main reason is that the amorphous layer is deposited in a process window having a thickness of 100 angstroms (more than conventional techniques), which is a wider range. Moreover, defects such as granules and agglomerates often occur in short translational distances compared to conventional techniques. For example, when a laser beam of 4 i 5 m J / cm transient energy illuminates the ruthenium layer to form a single crystal dream, the defect occurs at a translation distance of less than 〇.4^tm. Accordingly, the width of the process window is increased, and even though the amorphous enamel is larger than the conventional art, the energy consumption of the laser beam is not greatly increased. Figure 7 shows a diagram illustrating the comparison of conventional techniques with the transfer features of the present invention. When the gate voltage V g is gradually increased from -1 5 V to + 20 V at a fixed ratio, the drain current i flowing through the active channel layer is measured. Furthermore, the buckling voltage v is set at 1. 1 V and 10 V (V d = 〇. 1 ν and V d = 10 V), and these transfer characteristics are measured. The amorphous enamel layer of the conventional art is a thickness of 5 〇 〇, and the amorphous 矽 layer of the present invention is a thickness of 100 Å. As shown in Fig. 7, when the gate voltage V is 0.1 V, the field effect mobility of the thin film transistor is 230 cm 2 /V.s when a conventional germanium having a thickness of 500 Å is used. In contrast, when the drain voltage ν is 10 V, and the invented thickness is 100 Å, the field effect mobility of the thin film transistor is
第17頁 1321807 五、發明說明（13) 390cm 2/V.s。再者，當汲極電壓V在10V，在具有所發明的 石夕層的薄膜電晶體，其顯示出來的漏電流（1 e a k a g e c u r r e n t)是低的。因此，以厚度為1 0 0 0埃非晶石夕層所製造 出來具有主動層的薄膜電晶體，能夠改良電學上的特徵。 如圖7所顯示的實驗結果，依據本發明，非晶矽層以循序 橫向固化來結晶以及使用為薄膜電晶體的主動層時，非晶 矽層應為介於在6 0 0至2 0 0 0埃厚度之間。 如上所述，若單晶矽層，其依據本發明，係從非晶矽 沈積而形成的，薄膜電晶體的場效應遷移率被改良了 ，因 此這薄膜電晶體更合適使用在具有高解析度的液晶顯示器 上。主要的是，本發明的矽層能夠作為CMOS電晶體的元 件’而具有優良影像品質的液晶顯不器之驅動電路’其皆 是為這些的CMOS電晶體。 在結晶非晶矽的方法中作各種不同的修改及潤飾，這 對熟悉該項技藝人士是件明顯的事，所作的的修改及潤飾 仍在本發明的範疇内。因此，本發明意欲已涵蓋這些的修 改及潤飾，其皆在本發明提供之申請專利範圍内及其對應 等效手段。Page 17 1321807 V. Description of invention (13) 390cm 2/V.s. Further, when the drain voltage V is 10 V, the leakage current (1 e a k a g e c u r r e n t) which is exhibited in the thin film transistor having the inventive layer is low. Therefore, a thin film transistor having an active layer formed by a thickness of 100 Å amorphous layer can improve electrical characteristics. As shown in the experimental results shown in FIG. 7, according to the present invention, when the amorphous germanium layer is crystallized by sequential lateral solidification and used as the active layer of the thin film transistor, the amorphous germanium layer should be between 600 and 2000. 0 angstroms between thickness. As described above, if a single crystal germanium layer is formed in accordance with the present invention from the deposition of amorphous germanium, the field effect mobility of the thin film transistor is improved, and thus the thin film transistor is more suitably used in high resolution. On the LCD monitor. Mainly, the germanium layer of the present invention can be used as a component of a CMOS transistor, and a driver circuit for a liquid crystal display having excellent image quality is a CMOS transistor of these. Various modifications and retouchings in the method of crystallizing amorphous germanium are obvious to those skilled in the art, and modifications and retouchings are still within the scope of the present invention. Accordingly, the present invention is intended to cover such modifications and modifications as may be
1321807 圖式簡單說明 圖1顯示主動矩陣式液晶顯示器的主要組件之架構方 塊圖。 圖2係為一顯示顆粒尺寸相對於雷射能量密度的關係 圖。 圖3A到圖3C顯示橫截面，係說明非晶矽（a-Si)薄膜 的結晶其係利用循序橫向固化。 圖4以圖說明循序橫向固化（SLS)的方法。 圖5顯示一關係圖，說明在非晶矽層的厚度為5 0 0埃 時，於循序橫向固化期間之雷射能量密度。1321807 Schematic description of the diagram Figure 1 shows the architectural block diagram of the main components of the active matrix liquid crystal display. Figure 2 is a graph showing the relationship between particle size and laser energy density. 3A to 3C show cross sections illustrating the crystallization of an amorphous cerium (a-Si) film which is sequentially cured in a lateral direction. Figure 4 illustrates the method of sequential lateral solidification (SLS). Figure 5 shows a graph illustrating the laser energy density during sequential lateral solidification at a thickness of the amorphous germanium layer of 500 Å.
圖6顯示一關係圖，說明在非晶矽層的厚度為1 0 0 0埃 時，於循序橫向固化期間之雷射能量密度。 圖7顯示一關係圖，說明傳統技藝與發本發明就轉移Fig. 6 shows a relationship diagram showing the laser energy density during sequential lateral solidification when the thickness of the amorphous germanium layer is 100 Å. Figure 7 shows a relationship diagram illustrating the transfer of the conventional art and the invention.
特徵 之比 較 〇 圖號 編號 說 明 1 透 明 基 板 2 基 板 3 驅 動 電 路 3 a 閘 極 驅 動 電 路 3 b 資 料 驅 動 電 路 4 主 動 矩 陣 6 閘 極 線 8 資 料 線 10 像 素 電 極Feature ratio 〇 Figure No. Description 1 Transparent base plate 2 Base plate 3 Drive circuit 3 a Gate drive circuit 3 b Data drive circuit 4 Main moment matrix 6 Gate line 8 Material line 10 Pixel electrode
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