1321364 九、發明說明： 【發明所屬之技術領域】 本發明是有關於一種半導體光源裝置，且特別是有關於一種利用導熱 基板的側邊與平面’來貼附半導體晶片，使兼具聚光及散熱的半導體光源 裝置。 【先前技術】1321364 IX. Description of the Invention: [Technical Field] The present invention relates to a semiconductor light source device, and more particularly to a semiconductor wafer bonded to a side and a plane of a thermally conductive substrate to provide both concentrating and A semiconductor light source device that dissipates heat. [Prior Art]
習知大多使用如白熾燈、齒素燈或日光燈等各種不同之燈泡，以作為 光源裝置之發総。近來，*於發光二極體(Light Emitting DiQde，簡稱 LED)等半導體⑼具有體積,卜省電與壽命長等優點，乃逐漸取代而成為 極受歡迎之發光源。 對於光職置之結構而言，多^、高辨之發光三極體封裝，已成 為不可避免之趨勢要求。例如，名稱為”⑹eenMeaiiy^ded —to Device Package”之美國第6,492,725號專利，即提出一 種共中心之封裝結構’以利於封裝多個高功率晶片之結構的散熱。此種封 裂結構’雖可解決封裝多個高功率晶片之散_題，但因為在封裝結構體 之周邊，财-面可_半導體⑼，使得铸體晶片的聽數量受到限 制，且當半導體晶片為發光二極體時，也因為封裝結構體之周邊分佈的半 導體^不能集中’使其不祕足朗在半導體辆裝置時之聚光要求。 【發明内容】 種半導體光源裝置，其利用導 使其可兼具散熱與光源裝置的 有鏗於此，本發明之目的是提供一 熱基板的織與平面，來貼畔導體晶片， 聚光需求。 5 為達上述及其他目的’本發明提供一種半導體光源裝置包括 f板及第—半導體晶片。射，導熱基板至少具有第-面、第二面及側 邊，其側邊上並具有多個。第—半導體“係貼附於導熱基板之側邊 上’並電性連接至側邊之烊墊。 、在-實施例中，此半導體光源裝置更包括一聚光杯，用以裝置前述之 導熱基板，聚光杯具有-出光π，以將第—半導體“所產生之光，匯聚 往出光口的方向。 在一實施例中，導熱基板之第一面或第二面上也具有多個焊塾，而半 導體光源裝置更包料個第二半導體晶片，分職赚導熱基板之第_ 面、第二面或側邊上，並電性連接至第_面、第二面或側邊上之焊塾。 在-實施例中，此半導體絲裝置更包括：外導體 '内導體、絕緣 層與多個第三轉體；。其巾，輕體係配置於聚光杯巾，並具有外表 面、第-端、第二端與連通第—端及第二端之通孔π導體係設置於通 孔中’並突出於第-端之外。絕緣層設置於内導體與外導體之間， 而多個第三半導體晶片則貼附於外導體第一端之外表面上，並以串連、並 連或串並連組合方式連接至内導體與外導體，使第三半導體晶片所產生 之光’經由聚光杯之匯聚’而往出光口方向傳送。 為讓本發明之上述和其他目的、特徵 '和優點能更明顯易懂， 下文特以較佳實施例，並配合所附圖式，作詳細說明如下： 【實施方式】 圖1-2顯示根據本發明第一實施例之一種半導體光源裝置1〇，此半導 體光源裝置10包括例如是鋁基板或扁平狀熱管之導熱基板η、例如是發光 二極體晶片之半導體晶片12、13、14及聚光杯15。 以《埶k 出光口16之週緣設有兩溝槽151， 以便導熱基板u可以沿 15將半導體4 19 , 枝杯15中，並由聚光杯 :日 13、14所產生之光，匯聚往出光口 16的方向。 的第-¾ 11導熱基板11具有用以選擇性地軸轉體晶片12、13、14 側邊m上，^第二面112等平面與側邊118，第—面111、第二面112與 13盘Ur 具有作為電路佈線之多贿塾113。因為半導體晶片12、 u m…彳懷㈤片（FllP如），故可分麵附並電性連接至導熱基板 丄1之第一面111、笛- ^ —2，、側邊118的焊墊113上，而使用焊墊113 的電路佈線，來作為半導體晶片12、13與14的供電電極。 之莫2，為了提辭導體晶片12、13與14的導熱散熱效果，或當使用 t、，、土板11不適於貼附半導體晶片12、13與14時，導熱基板U上用 Y料導㈣12、13與14的位置，魏合有可提升導熱效率或利於 1附半導體晶片12、13與14之_嵌合塊115。嵌合塊115之材質例如為銅， 嵌合方式财a· t舰合之方絲製作。 則述實施例中，雖然在導熱基板u之第一面⑴、第二面m與側邊 118上刀職貼附有倒裝之半導體晶片12'13或14。然熟習此藝者應知， 可在導熱基板η之第-面ln、第二面112 _邊118上，分綱_ 之半導m2 13或14 ’以增加此半導體光雜置1G之發光強度。所 貼附之半導體晶片12、13或14也可以是-般晶片，再以導線分別連接至 第面111第一面112或側邊118的焊墊113上，其貼附位置較佳地應位 於聚光杯15之焦點上或鄰近焦點處。 當第一面111、第二面112或側邊118上分別貼附有多個半導體晶片 12 ' 13或Η時，也可以搭配第—面⑴、第二面li2.或側邊ιΐ8上之不同 佈線設計，以及控制此半導體光源裝置1〇之電路，來達成在不同場合應用 1321364 此半導體光職置10之目的。例如，將此半導體光源裝置1G朗在汽車 頭燈時，可以將作為遠光燈主光源之半導體晶片12'13或14，貼附在導熱 基板11對應聚光杯15之焦點位置，且將作為近光燈光源之半導體晶片12 或13，貼附在導熱基板11對應聚光杯15之焦點前方，並應用導熱基板u 之佈線，分別連接至半導體光源裝置1〇的不同控制電路上，以分別控制近 光燈或遠光燈光源的點亮與否。 另外，如將此半導體光源裝置10應用在舞台燈光時，除了可以將半導 體晶片12、13或14，貼附在導熱基板n對應聚光杯15之焦點位置外，也 可以將半導體晶片12、13或14，貼附在導熱基板u對應聚光杯15之焦點 四周，並應用導熱基板11之佈線，將焦點上或焦點四周之半導體晶片12、 13或14，分別連接至半導體光源裝置1〇的不同控制電路上，以分別控制 半導體晶片12、13或14的點亮鮮，達成域控麟台燈光之目的。其 中貼附於焦點左側之半導體晶片12、13或14所產生的光，將會偏向右 方投射，而貼附於焦點右側之半導體晶片12、13或14所產生的光，則會 偏向左方投射，故可以搭配半導體光源裝置1〇的控制電路，來動態控制舞 台燈光。 。二 圖3-7顯示根據本發明第二實施例之一種半導體光源裝置3〇 ,此半導 體光源裝置30除了具有與圖2類似之導熱基板31、貼附於側邊418之半導 體晶片34及聚光杯35外，更包括由外導體41、内導體42、絕緣層43 與多個半導體；44所構狀主光源4〇，以及可敎絲4()_於聚光 杯35之螺帽5卜其中，導熱基板31下方之v形缺口 311，正好可供主光 源40推進至接近半導體晶片34之位置。 '、 如圖所示，外導體41較佳地為長條形圓柱狀，其具有第一端4ιι、第 二端412、連通第一端411與第二端412之通孔413及一外表面414。第一 8 7 411係製作成錐狀，錐狀外表面414之周圍則具有圍繞外導體μ且平均 刀佈之平面4141 ' 4142、4143與4144，用以貼附例如是發光二極體之半導 曰曰片44。第—端412則可以設置多個螺紋415，用以配合設置於聚光杯 35上的螺紋，來調整主光源40在聚光杯35中之位置。 内導體42較佳地為外徑略小於外導體41之通孔413的長條形圓柱 狀，以便可以穿設於通孔413中，並延伸其一端至突出於外導體41 的第一端411外。圖巾’内導體42突出外導體41之部分並具有一錐 狀末端42丨，錐狀末端421較佳地也具有分別與平面4141、4142、4143與 4144相對應之平面421丨、4212、4213與4214，以利於使用導線45將半導 體晶片44分別連接至内導體42與外導體41。 絕緣層43係設置於内導體42與外導體41之間，以隔離内導 體42與外導體41的電性連接，使内導體42與外導體41成為此 主光源40之電極。 前述第二實施例的主光源40，除了可以是如圖3-7所示之結構外，熟 習此藝者亦可依據其精神而進行各種不同之變化。例如，圖8-10即顯示三 種類似於圖3-7之主光源4〇的不同結構，分別說明如下。 請參考圖8所示’主光源70的内導體72與外導體71結構均與 圖3-7相同，所不同的只有半導體晶片74的連接方式。在圖3_7中， 每個半導體晶片44均係以導線45分別連接至内導體42與外導體41， 使半導體晶片44成為並連連接，而圖8中，半導體晶片74係以導線乃先 行串連連接後，再連接至内導體72與外導體71。當然，此種串連、 並連或甚至串並連組合的連接方式，係可由使用者依據供電電壓與半導體 晶片74的額定電壓之不同，而加以變化選擇的。 圖9之主光源80的内導體82與外導體81結構亦大致與圖3_7 曰同所不同的是外導體81與内導體82上所設置用以貼附半導體 曰曰片84的平面數，以及所貼附之半導體晶片84的數目。如圖9所示，錐 狀外表面之周圍具有驗外導體81且平均分佈之三辦面814卜8142與 8143 ’每個平面8141、8142與8143上，各貼附有三個例如是發光二極體 之半導體晶片84，半導體晶片84並以導線肋先行串連連接後，再連接至 導體82與外導體81，以形成串並連交互組合之連接方式。 圖丨〇之主光源90的内導體92與外導體91結構同樣也大致與 …相同不同的疋外導體91與内導體92上所設置用以貼附 半導體晶片94的平面數，以及所貼附之半導體晶片94的型式。如圖10 所示，錐狀外表面之周圍具有圍繞外導體91且平均分佈之五個平面914卜 9142、9143、9144 與 9145，每個平面 914卜 9142、9143、9144 與 9145 上， 係貼附有倒裝晶片（Flip Chip)之半導體晶片94。由於半導體晶片％係貼 附並直接電性連接至外導體91與内導體92，因此，圖中之半導體晶片 94，並未再以導線分別連接至内導體92與外導體91。 圖11-12顯示根據本發明第三實施例之—種半導體光雜置6()，此半 導體光源裝置6G包括例如是錄板絲平狀熱管之導熱基板6卜例如是發 光二極體晶片之半導體晶片62、聚光杯65及陣列透鏡69。 其中’聚光杯65具有出光口 66，出光口 66之週緣並開設有平均分佈 之四個溝槽651 ’以便呈十字形之導熱基板61可以沿著四個溝槽651而裝 置於聚光杯65巾’並絲光杯65將半導體⑼62雌生之光，匯聚往出 光口 66的方向。 如圖所示’導熱基板61具有用以選擇性地貝占附半導體晶片的多個平面 m與側邊⑽，側邊⑽上並具有作為電路佈線之_ 613，以便貼附半 導體晶片62。因為半導體晶片62係為倒裝晶片（FUp⑽），故可直接貼 1321364 附並電性連接至導熱基板61之側邊618的焊塾6i3上，而使用焊墊613的 電路佈線，來作為半導體晶片62的供電電極。 此外，為了使半導體光源裝置60所產生之光可以更為均勻地分佈，聚 光杯65的出光口 66上也設置有一陣列透鏡69。圖中，陣列透鏡69的結構 • 係由陣列排列之凹透鏡所構成，以將聚光杯65匯聚往出光口 66方向之光， - 進一步折射而更為均勻地分佈於出光口 的方向。當然，如熟習此藝者所 知4車列透鏡69的結構也可以由陣列排列之凸透鏡而構成，同樣可以達成 分散半導體光源裝置60所產生之光，使更為均勻地分佈於出光口 66之目 ’的。 由前述說明中可知，因為半導體光源裝置丨〇或6〇係將半導體晶片】2、 13、14或62，貼附在例如是鋁基板或扁平狀熱管之導熱基板u或61上， 其無疑地可提供足夠之貼附面積與散熱面積。而半導體光源裝置3〇之外導 體41與内導體42 #結構，則如前述可在較小的體積内封裝較多的半導體 曰曰片，達成較佳的聚光效果。此外，由於半導體光源裝置3〇之外導體Μ， 除了可以作為供電電極外’也可以藉由與外加散熱器（未♦示）的輕合， 鲁使得如高功率縣二極體等半導體晶片所產生的熱能得峨速發散 較佳的散熱功效。 雖然本發明已以較佳實施例揭露如上，然其並非用以限定本 發明’任何熟習此技藝者，在不脫離本發明之精神和範圍内所作 之各種更動與潤飾’亦屬本發明之範圍。因此，本發明之保謹範 圍當視後附之申請專利範圍所界定者為準。 '又4 11 1321364 【圖式簡單說明】 圖1係顯示根據本發明第一實施例之一種半導體光源裝置立體圖。 圖2係顯示圖1之分解立體圖。 圖3係顯示根據本發明第二實施例之一種半導體光源裝置立體圖。 圖4係顯示圖3之分解立體圖。 圖5係顯示圖4之主光源放大立體圖。 圖6係顯示圖4之主光源剖面圖。 圖7係顯示圖4之主光源俯視圖。 圖8係顯示圖4之主光源的另一連接方式俯視圖。 圖9係顯示圖4之主光源的一種結構變化俯視圖。 圖10係顯示圖4之主光源的另一種結構變化俯視圖。 圖11係顯示根據本發明第三實施例之一種半導體光源裝置立體圖。 圖12係顯示圖11之分解立體圖。 【主要元件符號說明】 10、 30、60半導體光源裝置 11、 3卜61導熱基板 111第一面 112第二面 113、613 焊墊 115嵌合塊 118、418、618 側邊 12、 13、14、34、62半導體晶片 15、35、65聚光杯 12 1321364 151 ' 651 溝槽 16、66出光口 311 V形缺口 40、 70、80、90 主光源 51螺帽 41、 71、81、91 外導體 411第一端 412第二端 413通孔 414外表面 414卜 4142、4143、4144、4211、4212、4213、4214 平面 415螺紋 42、 72、82、92 内導體 421錐狀末端 43絕緣層 44'74、84、94半導體晶片 45、75、85 導線 69陣列透鏡 611平面 8141、8142、8143、9141、9142、9143、9144、9145 平面 13Conventionally, various light bulbs such as incandescent lamps, dentate lamps, or fluorescent lamps have been used as a light source device. Recently, semiconductors (9) such as Light Emitting Diode (LED) have the advantages of volume, power saving and long life, and have gradually become a very popular light source. For the structure of the optical office, the multi- and high-resolution light-emitting triode package has become an inevitable trend requirement. For example, U.S. Patent No. 6,492,725, entitled "(6) eenMeaiiy^ded - to Device Package, proposes a concentric packaging structure to facilitate heat dissipation of a structure encapsulating a plurality of high power wafers. Although such a cracking structure can solve the problem of packaging a plurality of high-power wafers, because the periphery of the package structure, the semiconductor--semiconductor (9), the number of listeners of the cast wafer is limited, and when the semiconductor When the wafer is a light-emitting diode, the semiconductors distributed around the periphery of the package structure cannot be concentrated to make it difficult to concentrate on the semiconductor device. SUMMARY OF THE INVENTION A semiconductor light source device that utilizes both heat dissipation and a light source device is disclosed. The object of the present invention is to provide a woven and flat surface of a thermal substrate for attaching a conductive wafer to a light collecting requirement. . 5 To achieve the above and other objects, the present invention provides a semiconductor light source device comprising an f-plate and a first-semiconductor wafer. The thermally conductive substrate has at least a first surface, a second surface, and side edges, and has a plurality of sides. The semiconductor-semiconductor is attached to the side of the thermally conductive substrate and electrically connected to the side pad. In the embodiment, the semiconductor light source device further includes a collecting cup for the heat conduction. The substrate, the concentrating cup has a light-emitting π to converge the light generated by the first semiconductor to the direction of the light exit port. In one embodiment, the first surface or the second surface of the thermally conductive substrate also has a plurality of solder bumps, and the semiconductor light source device further comprises a second semiconductor wafer, and the first and second sides of the thermally conductive substrate are separately occupied. Or on the side, and electrically connected to the weld on the _ face, the second face or the side. In an embodiment, the semiconductor filament device further comprises: an outer conductor 'inner conductor, an insulating layer and a plurality of third turns; The towel, the light system is disposed on the concentrating cup towel, and has an outer surface, a first end, a second end, and a through hole π guiding system connecting the first end and the second end in the through hole 'and protruding from the first Beyond the end. The insulating layer is disposed between the inner conductor and the outer conductor, and the plurality of third semiconductor wafers are attached to the outer surface of the first end of the outer conductor, and are connected to the inner conductor in a series, parallel or serial combination And the outer conductor, the light generated by the third semiconductor wafer is 'converged through the collecting cup' and sent to the light exit port. The above and other objects, features and advantages of the present invention will become more apparent and understood from A semiconductor light source device 1 according to a first embodiment of the present invention includes a thermally conductive substrate η such as an aluminum substrate or a flat heat pipe, semiconductor wafers 12, 13, 14 and a semiconductor chip such as a light emitting diode chip. Light cup 15. Two grooves 151 are provided on the periphery of the 埶k light exit opening 16 so that the heat conductive substrate u can converge the light generated by the concentrating cup: day 13, 14 along the semiconductor 4 19 , the branch cup 15 The direction of the light exit port 16. The heat-conductive substrate 11 has a plane and a side surface 118, a first surface 111, and a second surface 112 and 13 for selectively pivoting the wafers 12, 13, 14 on the side m, the second surface 112, and the like. The disk Ur has a lot of bribes 113 as a circuit wiring. Because the semiconductor wafer 12, um... 彳 ( 五 五 五 五 五 五 五 五 五 五 五 五 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体The circuit wiring of the pad 113 is used as the power supply electrode of the semiconductor wafers 12, 13, and 14. In order to clarify the heat conduction and heat dissipation effect of the conductor wafers 12, 13 and 14, or when t, the earth plate 11 is not suitable for attaching the semiconductor wafers 12, 13 and 14, the heat conduction substrate U is guided by the Y material. (4) At the positions of 12, 13, and 14, Weihe has a grading block 115 which can improve the heat conduction efficiency or facilitate the attachment of the semiconductor wafers 12, 13, and 14. The material of the fitting block 115 is, for example, copper, and the fitting method is made of square wire. In the embodiment, the flip-chip semiconductor wafer 12'13 or 14 is attached to the first surface (1), the second surface m, and the side surface 118 of the thermally conductive substrate u. However, it should be understood by those skilled in the art that on the first surface ln and the second surface 112 _ side 118 of the thermally conductive substrate η, the semi-conducting m2 13 or 14 ′ can be used to increase the luminous intensity of the semiconductor optical hybrid 1G. . The attached semiconductor wafer 12, 13 or 14 may also be a general-purpose wafer, and then connected to the pads 113 of the first surface 112 or the side edges 118 of the first surface 111 by wires, and the attachment position thereof is preferably located. Focusing on or near the focus of the collecting cup 15. When a plurality of semiconductor wafers 12' 13 or Η are attached to the first surface 111, the second surface 112 or the side edges 118, respectively, the difference between the first surface (1), the second surface li2, or the side ι 8 may be matched. The wiring design, as well as the circuit for controlling the semiconductor light source device, achieve the purpose of applying 1321364 to the semiconductor optical device 10 in different occasions. For example, when the semiconductor light source device 1G is used in an automobile headlight, the semiconductor wafer 12'13 or 14 which is the main source of the high beam can be attached to the focus position of the heat-conducting substrate 11 corresponding to the collecting cup 15, and The semiconductor wafer 12 or 13 of the low beam light source is attached to the front side of the focus of the heat conductive substrate 11 corresponding to the collecting cup 15, and the wiring of the heat conducting substrate u is applied to the different control circuits of the semiconductor light source device 1 to respectively Control whether the low beam or high beam source is lit or not. In addition, when the semiconductor light source device 10 is applied to a stage light, the semiconductor wafer 12, 13 or 14 can be attached to the focus position of the heat-conducting substrate n corresponding to the collecting cup 15, and the semiconductor wafers 12 and 13 can also be used. Or 14, attached to the heat-conducting substrate u corresponding to the focus of the collecting cup 15, and applying the wiring of the heat-conducting substrate 11 to connect the semiconductor wafer 12, 13 or 14 at the focus or the focus to the semiconductor light source device 1 Different control circuits are used to respectively control the lighting of the semiconductor wafers 12, 13 or 14 to achieve the purpose of controlling the lighting of the domain. The light generated by the semiconductor wafer 12, 13 or 14 attached to the left side of the focus will be projected to the right, and the light generated by the semiconductor wafer 12, 13 or 14 attached to the right side of the focus will be biased to the left. Projection, so you can use the control circuit of the semiconductor light source device to dynamically control the stage lighting. . 2 to 3 show a semiconductor light source device 3 according to a second embodiment of the present invention. The semiconductor light source device 30 has a heat conductive substrate 31 similar to that of FIG. 2, a semiconductor wafer 34 attached to the side 418, and a condensed light. The cup 35 further includes a main light source 4〇 composed of an outer conductor 41, an inner conductor 42, an insulating layer 43 and a plurality of semiconductors; 44, and a reel 4()_ a nut 5 of the collecting cup 35 The v-shaped notch 311 under the heat-conducting substrate 31 is just for the main light source 40 to be advanced to a position close to the semiconductor wafer 34. As shown, the outer conductor 41 is preferably an elongated cylindrical shape having a first end 4, a second end 412, a through hole 413 connecting the first end 411 and the second end 412, and an outer surface. 414. The first 8 7 411 is formed into a tapered shape, and the periphery of the tapered outer surface 414 has a plane 4141 ' 4142, 4143 and 4144 surrounding the outer conductor μ and averaging the knives for attaching, for example, the half of the light-emitting diode. Guide piece 44. The first end 412 can be provided with a plurality of threads 415 for adjusting the position of the main light source 40 in the collecting cup 35 in cooperation with the thread provided on the collecting cup 35. The inner conductor 42 is preferably an elongated cylindrical shape having an outer diameter slightly smaller than the through hole 413 of the outer conductor 41 so as to be able to pass through the through hole 413 and extend one end thereof to protrude from the first end 411 of the outer conductor 41. outer. The inner conductor 42 protrudes from the outer conductor 41 and has a tapered end 42A. The tapered end 421 preferably also has planes 421, 4212, 4213 corresponding to the planes 4141, 4142, 4143 and 4144, respectively. And 4214, to facilitate the use of wires 45 to connect the semiconductor wafer 44 to the inner conductor 42 and the outer conductor 41, respectively. The insulating layer 43 is disposed between the inner conductor 42 and the outer conductor 41 to isolate the inner conductor 42 from the outer conductor 41 so that the inner conductor 42 and the outer conductor 41 become the electrodes of the main light source 40. The main light source 40 of the foregoing second embodiment can be variously modified in accordance with its spirit, in addition to the structure shown in Figs. 3-7. For example, Figures 8-10 show three different configurations similar to the primary light source 4A of Figures 3-7, respectively, as explained below. Referring to Fig. 8, the structure of the inner conductor 72 and the outer conductor 71 of the main light source 70 is the same as that of Figs. 3-7, except that only the semiconductor wafer 74 is connected. In FIG. 3-7, each of the semiconductor wafers 44 is connected to the inner conductor 42 and the outer conductor 41 by wires 45, respectively, so that the semiconductor wafers 44 are connected in parallel. In FIG. 8, the semiconductor wafers 74 are connected in series by wires. After the connection, it is connected to the inner conductor 72 and the outer conductor 71. Of course, the connection manner of such serial connection, parallel connection or even serial combination can be selected by the user according to the difference between the supply voltage and the rated voltage of the semiconductor wafer 74. The inner conductor 82 and the outer conductor 81 of the main light source 80 of FIG. 9 are also substantially different from those of FIG. 3-7 in the number of planes on the outer conductor 81 and the inner conductor 82 for attaching the semiconductor wafer 84, and The number of semiconductor wafers 84 attached. As shown in FIG. 9, the outer surface of the tapered outer surface has an outer conductor 81 and an average distribution of three surfaces 814, 8142 and 8143', and each of the planes 8141, 8142 and 8143 is attached with three, for example, light-emitting diodes. The semiconductor wafer 84, the semiconductor wafer 84 is connected in series by wire ribs, and then connected to the conductor 82 and the outer conductor 81 to form a serial connection. The inner conductor 92 of the main light source 90 of the figure is also substantially the same as the outer conductor 91 and the plane number of the outer conductor 91 and the inner conductor 92 on which the semiconductor wafer 94 is attached, and attached. The type of semiconductor wafer 94. As shown in FIG. 10, the periphery of the tapered outer surface has five planes 914, 9142, 9143, 9144, and 9145 that are evenly distributed around the outer conductor 91, each of which is 914, 9142, 9143, 9144, and 9145. A semiconductor wafer 94 with a flip chip is attached. Since the semiconductor wafer % is attached and directly electrically connected to the outer conductor 91 and the inner conductor 92, the semiconductor wafer 94 in the figure is not further connected to the inner conductor 92 and the outer conductor 91 by wires, respectively. 11-12 show a semiconductor photo-electric hybrid device 6G according to a third embodiment of the present invention. The semiconductor light source device 6G includes a thermally conductive substrate 6 such as a flat-plate heat pipe, such as a light-emitting diode chip. Semiconductor wafer 62, concentrating cup 65, and array lens 69. The 'concentrating cup 65 has a light exiting opening 66, and the periphery of the light exiting opening 66 is opened and four channels 651' are evenly distributed. The heat conductive substrate 61 having a cross shape can be arranged in the collecting cup along the four grooves 651. The 65 towel's and the mercerized cup 65 converge the semiconductor (9) 62 female light in the direction of the light exit 66. As shown, the heat-conducting substrate 61 has a plurality of planes m and sides (10) for selectively enclosing the semiconductor wafer, and has _613 as a circuit wiring on the side (10) for attaching the semiconductor wafer 62. Since the semiconductor wafer 62 is a flip chip (FUp (10)), it can be directly attached to the solder pad 6i3 of the side 618 of the heat conductive substrate 61 and the circuit wiring of the solder pad 613 can be used as the semiconductor wafer. 62 power supply electrode. Further, in order to make the light generated by the semiconductor light source device 60 more evenly distributed, an array lens 69 is also disposed on the light exit port 66 of the collecting cup 65. In the figure, the structure of the array lens 69 is constituted by a concave lens arranged in an array to converge the light collecting cup 65 toward the light exiting port 66, further refracting and more evenly distributed in the direction of the light exit opening. Of course, as is well known to those skilled in the art, the structure of the four-column lens 69 can also be formed by a convex lens arranged in an array. Similarly, the light generated by the semiconductor light source device 60 can be dispersed to be more evenly distributed in the light exit port 66. purpose. As can be seen from the foregoing description, since the semiconductor light source device or the semiconductor wafer 2, 13, 14, or 62 is attached to the thermally conductive substrate u or 61 such as an aluminum substrate or a flat heat pipe, it is undoubtedly Provides sufficient attachment area and heat dissipation area. On the other hand, the semiconductor light source device 3 has a structure of the conductor 41 and the inner conductor 42 #, and as described above, a large number of semiconductor dies can be packaged in a small volume to achieve a better condensing effect. In addition, since the conductor Μ other than the semiconductor light source device 3 can be used as a power supply electrode, it can also be used in conjunction with an external heat sink (not shown) to make a semiconductor wafer such as a high-power county diode. The generated heat energy has an excellent heat dissipation effect at an idle speed. While the invention has been described above in terms of the preferred embodiments of the present invention, it is not intended to limit the scope of the present invention, and the various modifications and modifications which are made without departing from the spirit and scope of the invention. . Therefore, the scope of the present invention is defined by the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a perspective view showing a semiconductor light source device according to a first embodiment of the present invention. Fig. 2 is an exploded perspective view showing Fig. 1. 3 is a perspective view showing a semiconductor light source device according to a second embodiment of the present invention. Fig. 4 is an exploded perspective view showing Fig. 3. Fig. 5 is an enlarged perspective view showing the main light source of Fig. 4. Figure 6 is a cross-sectional view showing the main light source of Figure 4. Figure 7 is a plan view showing the main light source of Figure 4. Fig. 8 is a plan view showing another connection mode of the main light source of Fig. 4. Figure 9 is a top plan view showing a structural change of the main light source of Figure 4. Figure 10 is a top plan view showing another structural change of the main light source of Figure 4. Figure 11 is a perspective view showing a semiconductor light source device in accordance with a third embodiment of the present invention. Figure 12 is an exploded perspective view showing Figure 11. [Description of main component symbols] 10, 30, 60 semiconductor light source device 11, 3, 61 heat conductive substrate 111 first surface 112 second surface 113, 613 pad 115 fitting block 118, 418, 618 side 12, 13, 14 , 34, 62 semiconductor wafer 15, 35, 65 concentrating cup 12 1321364 151 ' 651 groove 16, 66 light exit port 311 V-shaped notch 40, 70, 80, 90 main light source 51 nut 41, 71, 81, 91 Conductor 411 first end 412 second end 413 through hole 414 outer surface 414 4142, 4143, 4144, 4211, 4212, 4213, 4214 plane 415 thread 42, 72, 82, 92 inner conductor 421 tapered end 43 insulation layer 44 '74, 84, 94 semiconductor wafer 45, 75, 85 wire 69 array lens 611 plane 8141, 8142, 8143, 9141, 9142, 9143, 9144, 9145 Plane 13