TWI319913B - Optoelectronic component with radiation-transparent electrical contact-layer - Google Patents

Optoelectronic component with radiation-transparent electrical contact-layer

Info

Publication number: TWI319913B
Authority: TW; Taiwan
Prior art keywords: radiation; layer; electrical contact; optoelectronic component; transparent electrical
Prior art date: 2002-12-31

Application number

TW092137032A

Other languages

English (en)

Other versions

TW200423435A (en

Inventor

Tony Albrecht

Wilhelm Stein

Ralph Wirth

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2002-12-31

Filing date

2003-12-26

Publication date

2010-01-21

2003-12-26 Application filed filed Critical

2004-11-01 Publication of TW200423435A publication Critical patent/TW200423435A/zh

2010-01-21 Application granted granted Critical

2010-01-21 Publication of TWI319913B publication Critical patent/TWI319913B/zh

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/84—Coatings, e.g. passivation layers or antireflective coatings

TW092137032A 2002-12-31 2003-12-26 Optoelectronic component with radiation-transparent electrical contact-layer TWI319913B (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
DE10261675A DE10261675B4 (de)	2002-12-31	2002-12-31	Optoelektronisches Bauelement mit strahlungsdurchlässiger elektrischer Kontaktschicht

Publications (2)

Publication Number	Publication Date
TW200423435A TW200423435A (en)	2004-11-01
TWI319913B true TWI319913B (en)	2010-01-21

Family

ID=32519514

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW092137032A TWI319913B (en)	2002-12-31	2003-12-26	Optoelectronic component with radiation-transparent electrical contact-layer

Country Status (4)

Country	Link
US (1)	US6979842B2 (zh)
JP (1)	JP2004214680A (zh)
DE (1)	DE10261675B4 (zh)
TW (1)	TWI319913B (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE102005008056A1 (de) *	2004-12-30	2006-07-13	Osram Opto Semiconductors Gmbh	Strahlungsemittierender Halbleiterchip und Verfahren zur Herstellung eines solchen Halbleiterchips
EP2259346B1 (en) *	2008-03-27	2019-07-03	LG Innotek Co., Ltd.	Light-emitting element and a production method therefor
DE102015116865B4 (de)	2015-10-05	2025-07-10	OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung	Verfahren zur Herstellung eines Halbleiterchips und Halbleiterchip
DE102016103342A1 (de) *	2016-02-25	2017-08-31	Aesculap Ag	Gasdurchlässige Filterkassette für einen Sterilbehälter

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CA920285A (en) *	1970-11-30	1973-01-30	L. Hartman Robert	Extending the operating life of light emitting p-n junction devices
JPH01265495A (ja)	1988-04-15	1989-10-23	Gunze Ltd	エレクトロルミネッセンス素子
JP2752423B2 (ja)	1989-03-31	1998-05-18	三菱電機株式会社	化合物半導体へのＺｎ拡散方法
JP2817590B2 (ja) *	1993-09-24	1998-10-30	信越半導体株式会社	発光素子の製造方法
JPH07263751A (ja) *	1994-03-24	1995-10-13	Sharp Corp	Ｉｉ−ｖｉ族化合物半導体装置及びその製造方法
JPH07307490A (ja)	1994-05-10	1995-11-21	Daido Steel Co Ltd	半導体光電素子に対するＺｎＯ膜形成方法
US5889295A (en) *	1996-02-26	1999-03-30	Kabushiki Kaisha Toshiba	Semiconductor device
US5789768A (en)	1997-06-23	1998-08-04	Epistar Corporation	Light emitting diode having transparent conductive oxide formed on the contact layer
JPH11135834A (ja) *	1997-10-27	1999-05-21	Matsushita Electric Ind Co Ltd	発光ダイオード装置及びその製造方法
DE19829197C2 (de) *	1998-06-30	2002-06-20	Siemens Ag	Strahlungsaussendendes und/oder -empfangendes Bauelement
US6207972B1 (en)	1999-01-12	2001-03-27	Super Epitaxial Products, Inc.	Light emitting diode with transparent window layer
JP4285837B2 (ja)	1999-06-14	2009-06-24	昭和電工株式会社	窓層を備えたＡｌＧａＩｎＰ発光素子
JP4376361B2 (ja) *	1999-07-21	2009-12-02	昭和電工株式会社	ＡｌＧａＩｎＰ発光ダイオード
JP4298861B2 (ja) *	1999-08-04	2009-07-22	昭和電工株式会社	ＡｌＧａＩｎＰ発光ダイオード
JP4232281B2 (ja)	1999-08-04	2009-03-04	昭和電工株式会社	ＡｌＧａＩｎＰ発光ダイオード
DE19955747A1 (de)	1999-11-19	2001-05-23	Osram Opto Semiconductors Gmbh	Optische Halbleitervorrichtung mit Mehrfach-Quantentopf-Struktur
JP2002016287A (ja)	2000-04-28	2002-01-18	Stanley Electric Co Ltd	半導体素子及び光半導体素子
US6255129B1 (en) *	2000-09-07	2001-07-03	Highlink Technology Corporation	Light-emitting diode device and method of manufacturing the same
JP2002105625A (ja)	2000-09-27	2002-04-10	Japan Science & Technology Corp	低抵抗ｐ型酸化亜鉛薄膜の製造方法
US6724013B2 (en) *	2001-12-21	2004-04-20	Xerox Corporation	Edge-emitting nitride-based laser diode with p-n tunnel junction current injection

2002
- 2002-12-31 DE DE10261675A patent/DE10261675B4/de not_active Expired - Lifetime
2003
- 2003-12-26 JP JP2003435310A patent/JP2004214680A/ja active Pending
- 2003-12-26 TW TW092137032A patent/TWI319913B/zh not_active IP Right Cessation
- 2003-12-31 US US10/749,433 patent/US6979842B2/en not_active Expired - Lifetime

Also Published As

Publication number	Publication date
DE10261675B4 (de)	2013-08-14
US6979842B2 (en)	2005-12-27
US20040256629A1 (en)	2004-12-23
DE10261675A1 (de)	2004-07-22
JP2004214680A (ja)	2004-07-29
TW200423435A (en)	2004-11-01

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Legal Events

Date	Code	Title	Description
2023-10-21	MM4A	Annulment or lapse of patent due to non-payment of fees