[go: up one dir, main page]

TWI319784B - Method and apparatus for material deposition on semiconductor wafer - Google Patents

Method and apparatus for material deposition on semiconductor wafer

Info

Publication number
TWI319784B
TWI319784B TW093138385A TW93138385A TWI319784B TW I319784 B TWI319784 B TW I319784B TW 093138385 A TW093138385 A TW 093138385A TW 93138385 A TW93138385 A TW 93138385A TW I319784 B TWI319784 B TW I319784B
Authority
TW
Taiwan
Prior art keywords
semiconductor wafer
material deposition
deposition
wafer
semiconductor
Prior art date
Application number
TW093138385A
Other languages
Chinese (zh)
Other versions
TW200526811A (en
Inventor
Yezdi Dordi
John Boyd
William Thie
Bob Maraschin
Fred C Redeker
Joel M Cook
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/735,216 external-priority patent/US7358186B2/en
Priority claimed from US10/734,704 external-priority patent/US7368017B2/en
Application filed filed Critical
Publication of TW200526811A publication Critical patent/TW200526811A/en
Application granted granted Critical
Publication of TWI319784B publication Critical patent/TWI319784B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1655—Process features
    • C23C18/1664—Process features with additional means during the plating process
    • C23C18/1667—Radiant energy, e.g. laser
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/14—Decomposition by irradiation, e.g. photolysis, particle radiation or by mixed irradiation sources
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1603—Process or apparatus coating on selected surface areas
    • C23C18/1607—Process or apparatus coating on selected surface areas by direct patterning
    • C23C18/1612—Process or apparatus coating on selected surface areas by direct patterning through irradiation means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1675—Process conditions
    • C23C18/1676—Heating of the solution
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/54—Contact plating, i.e. electroless electrochemical plating

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electrochemistry (AREA)
  • Chemically Coating (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)
TW093138385A 2003-12-12 2004-12-10 Method and apparatus for material deposition on semiconductor wafer TWI319784B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/735,216 US7358186B2 (en) 2003-12-12 2003-12-12 Method and apparatus for material deposition in semiconductor fabrication
US10/734,704 US7368017B2 (en) 2003-12-12 2003-12-12 Method and apparatus for semiconductor wafer planarization

Publications (2)

Publication Number Publication Date
TW200526811A TW200526811A (en) 2005-08-16
TWI319784B true TWI319784B (en) 2010-01-21

Family

ID=34713904

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093138385A TWI319784B (en) 2003-12-12 2004-12-10 Method and apparatus for material deposition on semiconductor wafer

Country Status (7)

Country Link
EP (1) EP1692324B1 (en)
JP (1) JP4742047B2 (en)
KR (1) KR101233444B1 (en)
MY (1) MY184648A (en)
SG (3) SG149018A1 (en)
TW (1) TWI319784B (en)
WO (1) WO2005061760A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI846928B (en) * 2019-08-27 2024-07-01 日商東京威力科創股份有限公司 Substrate liquid processing method, substrate liquid processing device, and computer readable recording medium

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4239789A (en) * 1979-05-08 1980-12-16 International Business Machines Corporation Maskless method for electroless plating patterns
US4359485A (en) * 1981-05-01 1982-11-16 Bell Telephone Laboratories, Incorporated Radiation induced deposition of metal on semiconductor surfaces
JPS61104083A (en) * 1984-10-27 1986-05-22 Hitachi Ltd Electroless plating method
EP0260516A1 (en) * 1986-09-15 1988-03-23 General Electric Company Photoselective metal deposition process
US4982065A (en) * 1989-03-07 1991-01-01 Ngk Insulators, Ltd. Method of producing a core for magnetic head
US5260108A (en) * 1992-03-10 1993-11-09 International Business Machines Corporation Selective seeding of Pd by excimer laser radiation through the liquid
JPH10219468A (en) * 1997-02-07 1998-08-18 Matsushita Electric Ind Co Ltd Conductive film formation method
JPH1192951A (en) * 1997-09-16 1999-04-06 Ebara Corp Method for plating substrate
US5989653A (en) * 1997-12-08 1999-11-23 Sandia Corporation Process for metallization of a substrate by irradiative curing of a catalyst applied thereto
JP3792038B2 (en) * 1998-01-09 2006-06-28 株式会社荏原製作所 Plating equipment
IE980461A1 (en) * 1998-06-15 2000-05-03 Univ Cork Method for selective activation and metallisation of materials
EP1062850B1 (en) * 1998-12-10 2007-05-30 LPKF Laser & Electronics Aktiengesellschaft Method for producing printed conductor structures
JP4035752B2 (en) * 2000-03-31 2008-01-23 セイコーエプソン株式会社 Manufacturing method of fine structure

Also Published As

Publication number Publication date
EP1692324B1 (en) 2018-10-03
SG182190A1 (en) 2012-07-30
JP4742047B2 (en) 2011-08-10
WO2005061760A1 (en) 2005-07-07
KR20060123313A (en) 2006-12-01
EP1692324A1 (en) 2006-08-23
JP2007525594A (en) 2007-09-06
TW200526811A (en) 2005-08-16
SG149018A1 (en) 2009-01-29
SG149019A1 (en) 2009-01-29
MY184648A (en) 2021-04-14
KR101233444B1 (en) 2013-02-14

Similar Documents

Publication Publication Date Title
AU2003253874A8 (en) Method and apparatus for supporting semiconductor wafers
SG118084A1 (en) Method and apparatus for cutting semiconductor wafers
SG135040A1 (en) Method for processing wafer
GB2380609B (en) Apparatus and method for investigating semiconductor wafers
EP1600270A4 (en) Substrate dividing apparatus and method for dividing substrate
AU2003246348A1 (en) Method for dividing semiconductor wafer
AU2003248339A1 (en) Method for dividing semiconductor wafer
AU2003296904A8 (en) Wafer coating and singulation method
IL145341A0 (en) Single wafer type substrate cleaning method and apparatus
SG110135A1 (en) Wafer processing method
SG109568A1 (en) Wafer processing method
SG110134A1 (en) Wafer processing method
TWI365994B (en) Method and apparatus for evaluating a semiconductor wafer
AU2003223511A1 (en) Method and apparatus for underfilling semiconductor devices
TWI349304B (en) Method for removing material from semiconductor wafer and apparatus for performing the same
TWI350554B (en) Method for manufacturing semiconductor device and substrate processing apparatus
AU2003256825A1 (en) Method and apparatus for manufacturing net shape semiconductor wafers
SG118433A1 (en) Apparatus and method for plating semiconductor wafers
AU2003212469A8 (en) Method for processing multiple semiconductor devices for test
SG118429A1 (en) Method and apparatus for plating semiconductor wafers
GB2409340B (en) Method for treating semiconductor material
SG112048A1 (en) Wafer processing method and wafer processing apparatus
TWI368268B (en) Method of removing unnecessary matter from semiconductor wafer, and apparatus using the same
SG135019A1 (en) Semiconductor wafer processing method
TWI317970B (en) Semiconductor processing method and apparatus for processing target substrate

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees