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TWI319233B - Phase change memory cell and manufacturing method - Google Patents

Phase change memory cell and manufacturing method

Info

Publication number
TWI319233B
TWI319233B TW95147744A TW95147744A TWI319233B TW I319233 B TWI319233 B TW I319233B TW 95147744 A TW95147744 A TW 95147744A TW 95147744 A TW95147744 A TW 95147744A TW I319233 B TWI319233 B TW I319233B
Authority
TW
Taiwan
Prior art keywords
manufacturing
memory cell
phase change
change memory
phase
Prior art date
Application number
TW95147744A
Other languages
Chinese (zh)
Other versions
TW200731515A (en
Inventor
Hsiang Lan Lung
Rich Liu
Shih Hung Chen
Yi Chou Chen
Original Assignee
Macronix Int Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Macronix Int Co Ltd filed Critical Macronix Int Co Ltd
Publication of TW200731515A publication Critical patent/TW200731515A/en
Application granted granted Critical
Publication of TWI319233B publication Critical patent/TWI319233B/en

Links

TW95147744A 2005-12-19 2006-12-19 Phase change memory cell and manufacturing method TWI319233B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US75213805P 2005-12-19 2005-12-19

Publications (2)

Publication Number Publication Date
TW200731515A TW200731515A (en) 2007-08-16
TWI319233B true TWI319233B (en) 2010-01-01

Family

ID=38251629

Family Applications (1)

Application Number Title Priority Date Filing Date
TW95147744A TWI319233B (en) 2005-12-19 2006-12-19 Phase change memory cell and manufacturing method

Country Status (2)

Country Link
CN (1) CN100583483C (en)
TW (1) TWI319233B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7535756B2 (en) * 2007-01-31 2009-05-19 Macronix International Co., Ltd. Method to tighten set distribution for PCRAM
JP4846813B2 (en) * 2009-03-12 2011-12-28 株式会社東芝 Nonvolatile semiconductor memory device
US20130299884A1 (en) * 2012-05-10 2013-11-14 Nanya Technology Corporation Memory device and method for manufacturing memory device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5687112A (en) * 1996-04-19 1997-11-11 Energy Conversion Devices, Inc. Multibit single cell memory element having tapered contact
US5789277A (en) * 1996-07-22 1998-08-04 Micron Technology, Inc. Method of making chalogenide memory device
US6147395A (en) * 1996-10-02 2000-11-14 Micron Technology, Inc. Method for fabricating a small area of contact between electrodes
WO2004008535A1 (en) * 2002-07-11 2004-01-22 Matsushita Electric Industrial Co., Ltd. Nonvolatile memory and its manufacturing method
KR100979710B1 (en) * 2003-05-23 2010-09-02 삼성전자주식회사 Semiconductor memory device and manufacturing method

Also Published As

Publication number Publication date
CN100583483C (en) 2010-01-20
TW200731515A (en) 2007-08-16
CN1996635A (en) 2007-07-11

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