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TWI318437B - Resistive random access memory (rram) and method for fabricating the same - Google Patents

Resistive random access memory (rram) and method for fabricating the same

Info

Publication number
TWI318437B
TWI318437B TW95142795A TW95142795A TWI318437B TW I318437 B TWI318437 B TW I318437B TW 95142795 A TW95142795 A TW 95142795A TW 95142795 A TW95142795 A TW 95142795A TW I318437 B TWI318437 B TW I318437B
Authority
TW
Taiwan
Prior art keywords
rram
fabricating
same
random access
access memory
Prior art date
Application number
TW95142795A
Other languages
Chinese (zh)
Other versions
TW200824046A (en
Inventor
Hengyuan Lee
Pang-Hsu Chen
Ching Chiun Wang
Original Assignee
Ind Tech Res Inst
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ind Tech Res Inst filed Critical Ind Tech Res Inst
Priority to TW95142795A priority Critical patent/TWI318437B/en
Publication of TW200824046A publication Critical patent/TW200824046A/en
Application granted granted Critical
Publication of TWI318437B publication Critical patent/TWI318437B/en

Links

TW95142795A 2006-11-20 2006-11-20 Resistive random access memory (rram) and method for fabricating the same TWI318437B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW95142795A TWI318437B (en) 2006-11-20 2006-11-20 Resistive random access memory (rram) and method for fabricating the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW95142795A TWI318437B (en) 2006-11-20 2006-11-20 Resistive random access memory (rram) and method for fabricating the same

Publications (2)

Publication Number Publication Date
TW200824046A TW200824046A (en) 2008-06-01
TWI318437B true TWI318437B (en) 2009-12-11

Family

ID=44771383

Family Applications (1)

Application Number Title Priority Date Filing Date
TW95142795A TWI318437B (en) 2006-11-20 2006-11-20 Resistive random access memory (rram) and method for fabricating the same

Country Status (1)

Country Link
TW (1) TWI318437B (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI496146B (en) * 2011-09-23 2015-08-11 Univ Nat Sun Yat Sen Resistance random access memory (rram) structure having a silicon nitride insulation layer
TWI501234B (en) * 2011-09-23 2015-09-21 Univ Nat Sun Yat Sen Resistance random access memory (rram) structure having a silicon oxide insulation layer
US9691979B2 (en) 2014-04-02 2017-06-27 Winbond Electronics Corp. Resistive random access memory and method of fabricating the same
US9847478B2 (en) 2012-03-09 2017-12-19 Taiwan Semiconductor Manufacturing Company, Ltd. Methods and apparatus for resistive random access memory (RRAM)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104465986B (en) * 2013-09-17 2017-12-05 华邦电子股份有限公司 Resistive memory and manufacturing method thereof
TWI508340B (en) * 2013-11-05 2015-11-11 Winbond Electronics Corp Resistive random access memory and method of manufacture thereof
CN104733608B (en) * 2013-12-18 2017-06-09 华邦电子股份有限公司 Resistance-type memory and its manufacture method
TWI605622B (en) 2016-04-27 2017-11-11 國立中山大學 Resistance random access memory
TWI722797B (en) * 2020-02-17 2021-03-21 財團法人工業技術研究院 Computation operator in memory and operation method thereof
US12213390B2 (en) 2021-05-12 2025-01-28 Tetramem Inc. Resistive random-access memory devices with multi-component electrodes
US11527712B2 (en) 2020-07-06 2022-12-13 Tetramem Inc. Low current RRAM-based crossbar array circuits implemented with interface engineering technologies
US12396375B2 (en) 2020-07-06 2025-08-19 Tetramem Inc. Resistive random-access memory devices with engineered electronic defects and methods for making the same
US12302768B2 (en) 2021-05-12 2025-05-13 Tetramem Inc. Resistive random-access memory devices with multi-component electrodes
US12382847B2 (en) 2020-07-06 2025-08-05 Tetramem Inc. Resistive random-access memory devices with multi-component electrodes and discontinuous interface layers
US12543514B2 (en) 2021-05-12 2026-02-03 Tetramem Inc. Resistive random-access memory devices with metal-nitride compound electrodes
TWI824516B (en) * 2021-05-12 2023-12-01 美商特憶智能科技公司 Resistive random-access memory devices with multicomponent electrodes and discontinuous interface layers

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI496146B (en) * 2011-09-23 2015-08-11 Univ Nat Sun Yat Sen Resistance random access memory (rram) structure having a silicon nitride insulation layer
TWI501234B (en) * 2011-09-23 2015-09-21 Univ Nat Sun Yat Sen Resistance random access memory (rram) structure having a silicon oxide insulation layer
US9847478B2 (en) 2012-03-09 2017-12-19 Taiwan Semiconductor Manufacturing Company, Ltd. Methods and apparatus for resistive random access memory (RRAM)
US10283702B2 (en) 2012-03-09 2019-05-07 Taiwan Semiconductor Manufacturing Company, Ltd. Methods for resistive random access memory (RRAM)
US9691979B2 (en) 2014-04-02 2017-06-27 Winbond Electronics Corp. Resistive random access memory and method of fabricating the same

Also Published As

Publication number Publication date
TW200824046A (en) 2008-06-01

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees