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TWI318010B - Pixel structure and fabricating method thereof - Google Patents

Pixel structure and fabricating method thereof

Info

Publication number
TWI318010B
TWI318010B TW095141458A TW95141458A TWI318010B TW I318010 B TWI318010 B TW I318010B TW 095141458 A TW095141458 A TW 095141458A TW 95141458 A TW95141458 A TW 95141458A TW I318010 B TWI318010 B TW I318010B
Authority
TW
Taiwan
Prior art keywords
pixel structure
fabricating method
fabricating
pixel
Prior art date
Application number
TW095141458A
Other languages
English (en)
Other versions
TW200822364A (en
Inventor
Yi-Wei Lee
Ching-Yun Chu
Tzufong Huang
Original Assignee
Au Optronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Au Optronics Corp filed Critical Au Optronics Corp
Priority to TW095141458A priority Critical patent/TWI318010B/zh
Priority to US11/675,639 priority patent/US7439541B2/en
Publication of TW200822364A publication Critical patent/TW200822364A/zh
Application granted granted Critical
Publication of TWI318010B publication Critical patent/TWI318010B/zh

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133553—Reflecting elements
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133504—Diffusing, scattering, diffracting elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
TW095141458A 2006-11-09 2006-11-09 Pixel structure and fabricating method thereof TWI318010B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW095141458A TWI318010B (en) 2006-11-09 2006-11-09 Pixel structure and fabricating method thereof
US11/675,639 US7439541B2 (en) 2006-11-09 2007-02-16 Pixel structure and fabricating method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW095141458A TWI318010B (en) 2006-11-09 2006-11-09 Pixel structure and fabricating method thereof

Publications (2)

Publication Number Publication Date
TW200822364A TW200822364A (en) 2008-05-16
TWI318010B true TWI318010B (en) 2009-12-01

Family

ID=39368851

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095141458A TWI318010B (en) 2006-11-09 2006-11-09 Pixel structure and fabricating method thereof

Country Status (2)

Country Link
US (1) US7439541B2 (zh)
TW (1) TWI318010B (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI355552B (en) * 2007-10-17 2012-01-01 Au Optronics Corp Pixel structure
JP4618337B2 (ja) * 2008-06-17 2011-01-26 ソニー株式会社 表示装置およびその製造方法、ならびに半導体装置およびその製造方法
WO2009154168A1 (ja) * 2008-06-17 2009-12-23 株式会社日立製作所 有機発光素子、その作製方法、その作製装置及びそれを用いた有機発光装置
TWI388035B (zh) * 2008-07-04 2013-03-01 Chunghwa Picture Tubes Ltd 畫素結構及其製造方法
JP2011071482A (ja) * 2009-08-28 2011-04-07 Fujifilm Corp 固体撮像装置，固体撮像装置の製造方法，デジタルスチルカメラ，デジタルビデオカメラ，携帯電話，内視鏡
TWI390292B (zh) * 2009-12-17 2013-03-21 Hannstar Display Corp 半穿透半反射式液晶顯示面板及其製作方法
TWI539582B (zh) * 2014-03-19 2016-06-21 友達光電股份有限公司 顯示面板及其製作方法
JP6422310B2 (ja) * 2014-11-12 2018-11-14 三菱電機株式会社 薄膜トランジスタ基板、その製造方法、及び、液晶表示装置
CN111796453A (zh) * 2020-07-08 2020-10-20 Tcl华星光电技术有限公司 一种液晶显示面板

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3184853B2 (ja) * 1993-06-24 2001-07-09 株式会社日立製作所 液晶表示装置
TWI255957B (en) * 1999-03-26 2006-06-01 Hitachi Ltd Liquid crystal display device and method of manufacturing the same

Also Published As

Publication number Publication date
US7439541B2 (en) 2008-10-21
US20080111935A1 (en) 2008-05-15
TW200822364A (en) 2008-05-16

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees