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TWI318002B - Semiconductor device and manufacturing method thereof - Google Patents

Semiconductor device and manufacturing method thereof

Info

Publication number
TWI318002B
TWI318002B TW095133635A TW95133635A TWI318002B TW I318002 B TWI318002 B TW I318002B TW 095133635 A TW095133635 A TW 095133635A TW 95133635 A TW95133635 A TW 95133635A TW I318002 B TWI318002 B TW I318002B
Authority
TW
Taiwan
Prior art keywords
manufacturing
semiconductor device
semiconductor
Prior art date
Application number
TW095133635A
Other languages
English (en)
Other versions
TW200737495A (en
Inventor
Hirohisa Matsuki
Jun Fukuda
Original Assignee
Fujitsu Microelectronics Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Microelectronics Ltd filed Critical Fujitsu Microelectronics Ltd
Publication of TW200737495A publication Critical patent/TW200737495A/zh
Application granted granted Critical
Publication of TWI318002B publication Critical patent/TWI318002B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10W42/00—
    • H10W72/012—
    • H10W72/20—
    • H10W72/50—
    • H10W74/117—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45164—Palladium (Pd) as principal constituent
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H10D1/688—Capacitors having no potential barriers having dielectrics comprising perovskite structures comprising barrier layers to prevent diffusion of hydrogen or oxygen
    • H10W70/63—
    • H10W70/656—
    • H10W72/01225—
    • H10W72/019—
    • H10W72/07251—
    • H10W72/07511—
    • H10W72/07553—
    • H10W72/252—
    • H10W72/29—
    • H10W72/531—
    • H10W72/536—
    • H10W72/5366—
    • H10W72/5434—
    • H10W72/552—
    • H10W72/5522—
    • H10W72/5525—
    • H10W72/59—
    • H10W72/90—
    • H10W72/923—
    • H10W72/9232—
    • H10W72/934—
    • H10W72/952—
    • H10W74/00—
    • H10W74/012—
    • H10W74/15—
    • H10W90/754—
TW095133635A 2006-03-31 2006-09-12 Semiconductor device and manufacturing method thereof TWI318002B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006096633A JP5050384B2 (ja) 2006-03-31 2006-03-31 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
TW200737495A TW200737495A (en) 2007-10-01
TWI318002B true TWI318002B (en) 2009-12-01

Family

ID=38358275

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095133635A TWI318002B (en) 2006-03-31 2006-09-12 Semiconductor device and manufacturing method thereof

Country Status (5)

Country Link
US (3) US7550844B2 (zh)
JP (1) JP5050384B2 (zh)
KR (1) KR100724714B1 (zh)
CN (1) CN101047156B (zh)
TW (1) TWI318002B (zh)

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US8357998B2 (en) * 2009-02-09 2013-01-22 Advanced Semiconductor Engineering, Inc. Wirebonded semiconductor package
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JP5160498B2 (ja) * 2009-05-20 2013-03-13 ルネサスエレクトロニクス株式会社 半導体装置
IT1400096B1 (it) 2010-05-12 2013-05-17 St Microelectronics Srl Processo di fabbricazione di circuiti elettronici integrati e circuiti cosi' ottenuti
JPWO2012035688A1 (ja) * 2010-09-16 2014-01-20 パナソニック株式会社 半導体装置、半導体装置ユニット、および半導体装置の製造方法
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CN103117236A (zh) * 2013-02-25 2013-05-22 江苏汇成光电有限公司 一种图形化金凸块的制作工艺
US9082626B2 (en) * 2013-07-26 2015-07-14 Infineon Technologies Ag Conductive pads and methods of formation thereof
JP5732493B2 (ja) * 2013-07-29 2015-06-10 ルネサスエレクトロニクス株式会社 半導体装置
US20150048502A1 (en) * 2013-08-14 2015-02-19 International Business Machines Corporation Preventing misshaped solder balls
US20150123267A1 (en) * 2013-11-06 2015-05-07 Taiwan Semiconductor Manufacturing Company Ltd. Packaged semiconductor device
US20160086960A1 (en) * 2014-09-22 2016-03-24 Texas Instruments Incorporated Low-Temperature Passivation of Ferroelectric Integrated Circuits for Enhanced Polarization Performance
KR102438179B1 (ko) * 2017-11-02 2022-08-30 삼성전자주식회사 반도체 장치 및 이를 포함하는 반도체 패키지, 및 상기 반도체 장치의 제조 방법
US10879138B1 (en) * 2019-06-14 2020-12-29 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor packaging structure including interconnection to probe pad with probe mark and method of manufacturing the same
CN113013123A (zh) * 2019-12-20 2021-06-22 上海新微技术研发中心有限公司 功率器件的金属焊盘结构
CN112366131B (zh) * 2020-10-21 2023-01-03 武汉新芯集成电路制造有限公司 一种半导体器件的制造方法
US20230345786A1 (en) * 2022-04-22 2023-10-26 Taiwan Semiconductor Manufacturing Company, Ltd. Defect Reduction Through Scheme Of Conductive Pad Layer And Capping Layer

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Also Published As

Publication number Publication date
US8395260B2 (en) 2013-03-12
CN101047156B (zh) 2011-11-02
TW200737495A (en) 2007-10-01
US7550844B2 (en) 2009-06-23
CN101047156A (zh) 2007-10-03
JP2007273676A (ja) 2007-10-18
US8084277B2 (en) 2011-12-27
US20120061847A1 (en) 2012-03-15
US20070228561A1 (en) 2007-10-04
JP5050384B2 (ja) 2012-10-17
US20090230560A1 (en) 2009-09-17
KR100724714B1 (ko) 2007-06-04

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