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TWI317950B - Three-dimensional memory devices and methods of manufacturing and operating the same - Google Patents

Three-dimensional memory devices and methods of manufacturing and operating the same

Info

Publication number
TWI317950B
TWI317950B TW095109594A TW95109594A TWI317950B TW I317950 B TWI317950 B TW I317950B TW 095109594 A TW095109594 A TW 095109594A TW 95109594 A TW95109594 A TW 95109594A TW I317950 B TWI317950 B TW I317950B
Authority
TW
Taiwan
Prior art keywords
manufacturing
operating
methods
same
memory devices
Prior art date
Application number
TW095109594A
Other languages
Chinese (zh)
Other versions
TW200636737A (en
Inventor
Ming-Hsiu Lee
Yen-Hao Shih
Original Assignee
Macronix Int Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Macronix Int Co Ltd filed Critical Macronix Int Co Ltd
Priority claimed from US11/385,061 external-priority patent/US7589368B2/en
Publication of TW200636737A publication Critical patent/TW200636737A/en
Application granted granted Critical
Publication of TWI317950B publication Critical patent/TWI317950B/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0413—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having charge-trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
TW095109594A 2005-03-21 2006-03-21 Three-dimensional memory devices and methods of manufacturing and operating the same TWI317950B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US66386605P 2005-03-21 2005-03-21
US11/385,061 US7589368B2 (en) 2005-03-21 2006-03-21 Three-dimensional memory devices

Publications (2)

Publication Number Publication Date
TW200636737A TW200636737A (en) 2006-10-16
TWI317950B true TWI317950B (en) 2009-12-01

Family

ID=37009410

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095109594A TWI317950B (en) 2005-03-21 2006-03-21 Three-dimensional memory devices and methods of manufacturing and operating the same

Country Status (1)

Country Link
TW (1) TWI317950B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI506649B (en) * 2013-08-30 2015-11-01 Micron Technology Inc Memory array plane select

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009135131A (en) * 2007-11-28 2009-06-18 Toshiba Corp Semiconductor memory device
TW202224142A (en) * 2010-02-16 2022-06-16 凡 歐貝克 System comprising a semiconductor device and structure
TWI497707B (en) * 2012-08-01 2015-08-21 Macronix Int Co Ltd Three-dimensional array structure for memory devices
JP2022118667A (en) * 2021-02-02 2022-08-15 キオクシア株式会社 semiconductor storage device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI506649B (en) * 2013-08-30 2015-11-01 Micron Technology Inc Memory array plane select

Also Published As

Publication number Publication date
TW200636737A (en) 2006-10-16

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