TWI311370B - - Google Patents
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- TWI311370B TWI311370B TW95136184A TW95136184A TWI311370B TW I311370 B TWI311370 B TW I311370B TW 95136184 A TW95136184 A TW 95136184A TW 95136184 A TW95136184 A TW 95136184A TW I311370 B TWI311370 B TW I311370B
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- substrate
- optical
- capacitor array
- thin film
- resistor
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- 239000003990 capacitor Substances 0.000 claims description 66
- 239000000758 substrate Substances 0.000 claims description 41
- 230000003287 optical effect Effects 0.000 claims description 40
- 238000000034 method Methods 0.000 claims description 32
- 238000004891 communication Methods 0.000 claims description 28
- 239000010409 thin film Substances 0.000 claims description 28
- 239000010408 film Substances 0.000 claims description 26
- 239000013307 optical fiber Substances 0.000 claims description 20
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 14
- 235000012431 wafers Nutrition 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 238000000227 grinding Methods 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 239000000835 fiber Substances 0.000 claims description 6
- 238000007747 plating Methods 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 239000011159 matrix material Substances 0.000 claims description 2
- 230000005540 biological transmission Effects 0.000 claims 1
- 238000001914 filtration Methods 0.000 claims 1
- 238000005259 measurement Methods 0.000 claims 1
- 230000007704 transition Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 13
- 238000010586 diagram Methods 0.000 description 11
- 239000000463 material Substances 0.000 description 3
- 238000007517 polishing process Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 206010011469 Crying Diseases 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- BMHXEEQNNKYEMW-UHFFFAOYSA-N [Ta+5].[C-]#N.[C-]#N.[C-]#N.[C-]#N.[C-]#N Chemical compound [Ta+5].[C-]#N.[C-]#N.[C-]#N.[C-]#N.[C-]#N BMHXEEQNNKYEMW-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- -1 resistors Substances 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 235000002020 sage Nutrition 0.000 description 1
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- Light Receiving Elements (AREA)
- Optical Couplings Of Light Guides (AREA)
Description
1311370 九、發明說明： 【發明所屬之技術領域】 本發明之一種多功能薄膜電阻_電容陣列，尤指—種 在單曰曰片上形成多數個不同電阻值及電容值之電阻、電 容及其組合，並具有作為光學次基座功能之多功能薄膜電 子被動元件。 ％ 【先前技術】 已知，在光纖通訊收光模組或半導體封裝，因晶片 • (IC)及電路需求，常需要搭配電路需求加入電阻或電容 (SMD、SLC、MLCC)來做穩壓或濾雜訊等功能。 請參閱第一、二圖所示，係已知之光纖通訊收光模組 1 一實施例之封裝架構及電容元件侧視圖，如圖一所示， 該光纖通訊收光模組1之封裝架構包括有：一基座丨丨、一 光偵測器（Photodiode ) 12、一光學次基座（Optical substrate) 13、一轉阻放大器（τΐΑ，transimpedance 參amplifier)l4所構成’並依電路設計所需之電阻值及電容 值而由電阻Η及一個 SLC ( Single Layer Capacitor ) 電容16、16’組成為穩壓或濾波器功能之電路，上述各元 件間之電路連接，係利用黏晶製程（Dieb〇nd )即以銀膠 將光偵測器（Photodiode ) 12黏晶（Dieb〇nd )於光學次 ，基座（Optical substrate ) 13上，以藉由光學次基座 ’ （Optical substrate ) 13之厚度調整光摘測器 (Photodiode ) 12之光學位置，達到收光所適合之特定高 度，再利用打線製紅（Wire bond)連接形成電路結構，並固 1311370 設於上述基座11之端面上以配合ΤΟ-can架構封裝，又，前 述架構中之 SLC ( Single Layer Capacitor )電容 16、 16 ’在介電質層161表面，加設一金屬層162 、163 ， 此型電容雖可直接在其上利用黏晶（Die bond )製程結合 光偵測器（Photodiode ) 12，以及利用打線（Wire bond)製 程作電路連接，但其厚度之變化亦會直接影響其電容值， 無法直接作為光學次基座，故，在電路設計上需增設一光 學次基座（Optical substrate ) 13以調整光學平面，但因 Φ 此也增加使用之物料成本及工時。 再請參閱第三、四、五圖所示，係已知之光纖通訊收 光模組1另一實施例之封裝架構、電容元件侧視及電路 圖，如圖所示’該光纖通訊收光模組1之封裝架構包括 有：一基座11、一光偵測器（Photodiode ) 12、一光學次 基座（Optical substrate ) 13、一轉阻放大器（TIA， transimpedance amplifier)14所構成，並依電路設計所需之 •電阻值及電谷值，而由一 SMD電阻17及二個SMD電容18、 1.8連接組成具知壓或慮波器功能之電路，上述各元件間 之電路連接’利用黏晶製程（Die bond )將光偵測器 (Photodiode ) 12黏晶（Die bond )於光學次基座 (Optical substrate ) 13 上’而電阻 17 及 SMD 電容 18、18因無法在其表面‘上打線（Wire bond)，且其二個電 極設在同一平面上，所以’需將SMD黏晶（Die bond )於次 基板19將電極連接出來，如第三、四圖所示，而其中之任 ，電容18或18可依設計而與—光債測器（ph〇todi〇 6 1311370 12固設於同一光學次基座（Optical substrate ) 13上，以 利於電路設計及打線，接著，利用打線製程（Wire bond)連 接上述各元件形成電路結構，如第五圖所示。 惟，上述之習知光纖通訊收光模組1之封裝架構及電 路設計，都必需由多數個電阻、電容元件、光學次基座 (Optical substrate ) 13組成電路所需之穩壓電路或慮波 器，換言之，在光偵測器（Photodiode ) 12之黏晶結合及 電路連接上，都需透過多次的黏晶製程（Die bond )及打 Φ 線製程（Wire bond)及封裝工時，成本也較高，當然，也因 此在電路/光學設計、電路連接之走線設計上造成限制， 尤其，上述之SMD電阻及SMD電容有其標準規格，隨著光 纖通訊收光模組設計越來越複雜及小型化，對於元件之配 置空間上也會受到限制，另，該光偵測器（Photodiode ) 12亦需根據光學設計與需求，利用不同厚度之光學次基座 (Optical substrate ) 13以調整適當之光學位置，也造成 I 使用物料成本增加。 【發明内容】 本發明之主要目的，在於解決上述習知缺失，本發明 以方便之光罩（Photo-mask )定義電阻-電容陣列圖案設 計及製程，配合薄膜厚度控制，在單一矽基板（Silicon1311370 IX. Description of the invention: [Technical field of the invention] A multifunctional thin film resistor_capacitor array of the present invention, in particular, a resistor, a capacitor and a combination thereof which form a plurality of different resistance values and capacitance values on a single wafer And has a multifunctional thin film electronic passive component as an optical sub-base function. % [Prior Art] It is known that in optical fiber communication receiving modules or semiconductor packages, due to the requirements of wafers (IC) and circuits, it is often necessary to add resistors or capacitors (SMD, SLC, MLCC) to the voltage requirements of the circuit or Filter noise and other functions. Referring to the first and second figures, a known optical fiber communication light-receiving module 1 is a package structure and a side view of a capacitor element. As shown in FIG. 1 , the package structure of the optical fiber communication light-receiving module 1 includes There are: a pedestal 丨丨, a photodetector (Photodiode) 12, an optical sub base (Optical substrate) 13, a transimpedance amplifier (τ ΐΑ, transimpedance amplifier) l4 constitute 'and according to the circuit design required The resistance value and the capacitance value are composed of a resistor Η and an SLC (Single Layer Capacitor) capacitor 16, 16', which is a circuit for voltage regulation or filter function. The circuit connection between the above components is performed by a die bonding process (Dieb〇) Nd) the photodetector (Photodiode) 12 is bonded to the optical substrate, the optical substrate 13 by silver paste, to the thickness of the optical substrate 13 (optical substrate) 13 Adjust the optical position of the photodiode 12 to reach a specific height suitable for light collection, and then form a circuit structure by using a wire bond to form a circuit structure, and fix 1311370 on the end surface of the base 11 to match In the ΤΟ-can architecture package, the SLC (Single Layer Capacitor) capacitors 16, 16' in the foregoing architecture are provided with a metal layer 162 and 163 on the surface of the dielectric layer 161. This type of capacitor can be directly used thereon. The die bond process is combined with a photodiode 12 and a wire bond process for circuit connection, but the thickness variation directly affects the capacitance value and cannot be directly used as an optical sub-base. Therefore, an optical sub-base 13 is required in the circuit design to adjust the optical plane, but the material cost and man-hour of use are also increased due to Φ. Referring to the third, fourth and fifth figures, the packaging structure, the capacitive component side view and the circuit diagram of another known embodiment of the optical fiber communication light-receiving module 1 are as shown in the figure, 'the optical fiber communication light-receiving module The package structure includes: a pedestal 11, a photodiode 12, an optical substrate 13, and a transimpedance amplifier (TIA) 14 and Design the required resistance value and electric valley value, and a SMD resistor 17 and two SMD capacitors 18, 1.8 are connected to form a circuit with a function of pressure or filter, and the circuit connection between the above components is utilized. The Die bond 12 photodiode 12 is bonded to the optical substrate 13 and the resistors 17 and SMD capacitors 18 and 18 are unable to wire on the surface. Wire bond), and the two electrodes are disposed on the same plane, so 'SMD must be bonded to the sub-substrate 19 to connect the electrodes, as shown in the third and fourth figures, and any of them, the capacitor 18 or 18 can be designed with - light debt detector The ph〇todi〇6 1311370 12 is fixed on the same optical sub-base 13 to facilitate circuit design and wire bonding. Then, the above components are connected by a wire bond to form a circuit structure, as shown in the fifth figure. As shown in the above, the package structure and circuit design of the conventional optical fiber communication light-receiving module 1 must be composed of a plurality of resistors, capacitor elements, and an optical sub-base 13 to form a voltage-stabilizing circuit. Or the wave filter, in other words, the photo-bonding and circuit connection of the photodiode 12 is required to pass through multiple bond bonding (Die bond) and Φ wire bonding (Wire bond) and package workers. At the same time, the cost is also high. Of course, it also imposes restrictions on the circuit/optical design and circuit connection design. In particular, the above-mentioned SMD resistors and SMD capacitors have their standard specifications, and the design of the optical fiber communication receiving module Increasingly complex and miniaturized, there is also a limit to the configuration space of components. In addition, the photodiode 12 needs to use different thicknesses according to optical design and requirements. The optical sub-mount 13 is used to adjust the appropriate optical position, which also causes an increase in the cost of materials used in I. SUMMARY OF THE INVENTION The main object of the present invention is to solve the above-mentioned conventional deficiencies, and the present invention facilitates the photomask (Photo) -mask ) defines the resistor-capacitor array pattern design and process, in conjunction with film thickness control, on a single germanium substrate (Silicon
Substrate )表面所鍍設之一介電薄膜上，製成複數個不同 » > 電阻值或電容值之電’阻、電容，元件，或者電阻、電容搭配 組合及其相互間之電路連接設計。 本發明之另一主要目的，本發明之電阻-電容陣列可 1311370 以利用半導體研磨製程，隨意調整矽基板之晶片厚度，用 以在光纖通訊收光模組中替代光學次基座（Optical substrate )以黏晶（Die bond )光债測器 (Photodiode )，以調整所需之光學位置，而利於應用在 光纖通訊收光模組及其產品之電路與光學設計。 為達上述之目的，本發明之多功能薄膜電阻-電容陣 列，其製法包括下列步驟： 提供一石夕基板（Silicon Substrate ); Φ 在上述石夕基板（Si 1 icon Substrate )表面鍍設一介電 薄膜； 利用半導體製程於光罩（Photo-mask )上製作之圖樣 設計及製程，在上述介電薄膜上製作複數個不同電阻值或 電容值，以及線路連接設計之電阻、電容陣列圖樣； 利用研磨製程，研磨上述矽基板之厚度，以達所須光 學平面之厚度，或依需求而選擇所須厚度之晶片製作； 在上述石夕基板（Silicon Substrate )另一表面，或經 # ... 研磨後鍍設一金屬層以形成導通點； 製成單一晶片，具複數個不同電阻值或電容值之電 阻、電容元件，或者電阻、電容搭配組合，及其電路圖案 連接之多功能薄膜電阻-電容陣列。 為達上述之目的，本發明之一種應用多功能，薄膜電阻 -電容陣列之光纖通訊收光模組，包括有： 一基座； 一多功能薄膜電阻-電容陣列，於其單一晶片 8 1311370 (Chip )上具有複數個需求電阻值、電容值之電阻、♦六 元件’並黏晶（Die bond )於上述基座一表面； 一光偵測器（Photodiode ),黏晶（Die b〇nd )於上 述多功能薄膜電阻—電容陣列，以利用多功能薄膜電阻一 電容陣列之厚度調整符合之光學位置； 一轉阻放大器（TIA，transimpedance amplifier),黏晶 (Die bond )於上述基座一表面； 』 上述之光偵測器（Ph〇t〇di〇de )、轉阻放大器（TIA， transimpedance amplifier)、多功能薄膜電阻_電容陣列之 各電阻、電容，以及基座之複數個端子，利用打線製程 (Wire bond)連接形成電路結構。 、王 【實施方式】 茲有關本發明之技術内容及詳細說明，現配合圖 明如下： 巧1兒Substrate) The surface of a dielectric film is coated with a plurality of different electrical resistances, capacitances, capacitors, resistors, capacitors, and combinations of resistors and capacitors. Another main object of the present invention is that the resistor-capacitor array of the present invention can use 1312370 to arbitrarily adjust the thickness of the wafer of the substrate by using a semiconductor polishing process for replacing the optical substrate in the optical fiber communication receiving module. The die bond (Photodiode) is used to adjust the required optical position, which is beneficial to the circuit and optical design of the fiber optic communication receiving module and its products. For the above purposes, the multifunctional thin film resistor-capacitor array of the present invention comprises the following steps: providing a SiS substrate; Φ plating a dielectric on the surface of the Si 1 icon Substrate a film; a pattern design and a process for fabricating a photo-mask on a semiconductor process, and forming a plurality of different resistance values or capacitance values on the dielectric film, and a pattern of resistance and capacitance arrays of the line connection design; Process, grinding the thickness of the ruthenium substrate to achieve the thickness of the optical plane required, or selecting the desired thickness of the wafer for fabrication; on the other surface of the above-mentioned Silicon Substrate, or by grinding After plating a metal layer to form a conductive point; a single wafer, a plurality of resistors or capacitors having different resistance values or capacitance values, or a combination of resistors and capacitors, and a circuit pattern connected multi-layer thin film resistor-capacitor Array. To achieve the above object, a multi-functional, thin film resistor-capacitor array optical fiber communication light-receiving module of the present invention comprises: a pedestal; a multi-functional thin film resistor-capacitor array on a single wafer 8 1311370 ( Chip has a plurality of resistors with a required resistance value and a capacitance value, ♦ a six-element 'die bond' on the surface of the pedestal; a photodiode, Die b〇nd The multi-functional thin film resistor-capacitor array is configured to adjust the optical position according to the thickness of the multi-functional thin film resistor-capacitor array; a transimpedance amplifier (TIA), and a die bond on the surface of the pedestal ; the above-mentioned photodetector (Ph〇t〇di〇de), transimpedance amplifier (TIA), transimpedance amplifier, multi-function thin film resistor_capacitor array resistors, capacitors, and multiple terminals of the pedestal A wire bond connection forms a circuit structure. [Embodiment] The technical content and detailed description of the present invention are as follows:
月ί '1弟/、七圖所示’係本發明之多功能薄膜電 程及侧視不意圖。如圖所示 未 電容陣列2，其製法包括下叫 步驟 800 ，^ / 提供一石夕基板（Silicon Substrate ) 在· 述珍基板（ 步驟802The month ί '1 brother /, the figure shown in the seventh figure is not intended for the multifunctional film circuit and side view of the present invention. As shown in the figure, there is no capacitor array 2, and the method includes the following steps: step 800, ^ / providing a silicon substrate (Silicon Substrate) in the sage substrate (step 802)
石夕之任一種； ，該介電薄膜22係為氰化矽或氣Any one of Shi Xizhi; the dielectric film 22 is tantalum cyanide or gas
矛J用半導體製程之黃光製程，配合光I 上製作之圖樣設計，在上述介電薄膜^ 1311370 製作所需求之複數個電阻、電容搭配組合之定義圖樣及其 連接線路之電路圖案之陣列金屬層221 ; 步驟804，利用研磨製程研磨矽基板之厚度，以達所 須光學平面之厚度，當然也可以依需求而選擇所須厚度之 晶片製作，或者於作好電阻-電容陣列的圖樣後再配合半 導體研磨製程研磨所須厚度。 步驟806，在上述石夕基板（Silicon Substrate ) 21另 一表面，可先配合石夕基板（Si 1 icon Substrate ) 21厚度而 # 研磨後，再於研磨處鍍設一金屬層（Gold pad ) 26，以形 成其一導通點，當然在其他具體實施例中，亦可直接利用 銀膠覆設之黏晶方式形成其一導通點， 步驟808 ，完成多功能薄膜電阻-電容陣列2之製 作，於該元件之單一晶片上，形成有多數不同電阻值或電 容值之電阻元件、電容元件，或二者之搭配組合。 上述製作於介電薄膜22上之電阻、電容之電阻值及電 0 容值，主要是透過介電薄膜22厚度控制與其上所設計定義 之圖樣決定，換言之，可利用光罩（Photo-mask )製作時 於其上所定義電阻-電容陣列圖樣之陣列金屬層221設 計，如不同之面積、矩陣圖案設計與薄膜厚度，以在矽基 板（Si 1 icon Substrate ) 21及其上鍍設之介電薄膜22厚度 控制，製作多數不同電阻值或電容值之電阻及電容，以及 J 9 其相互間電性連接之電路圖案。 ’ 同時該製成之多功能薄膜電阻-電容陣列2，可直接 在電阻-電容陣列圖樣之陣列金屬層221上進行黏晶製程 10Spear J uses the semiconductor process yellow light process, combined with the pattern design made on the light I, in the above dielectric film ^ 1311370, the required number of resistors, capacitors, the combination of the definition pattern and the circuit pattern of the connection circuit Step 804: Grinding the thickness of the substrate by using a polishing process to achieve the thickness of the optical plane to be required. Of course, the wafer of the required thickness can be selected according to the requirements, or the pattern of the resistor-capacitor array can be matched. The thickness required for the semiconductor grinding process. Step 806, on the other surface of the above-mentioned Silicon Substrate 21, the surface of the Si Xi substrate (Si 1 icon Substrate) 21 may be first grounded, and then polished to a metal layer (Gold pad) 26 . In order to form a conductive point thereof, of course, in other specific embodiments, a conductive point can be directly formed by using a silver paste-coated die bonding method, and step 808 is completed to complete the fabrication of the multifunctional thin film resistor-capacitor array 2. On a single wafer of the device, a plurality of resistor elements, capacitor elements, or a combination of the two having different resistance values or capacitance values are formed. The resistance and capacitance values of the resistors and capacitors fabricated on the dielectric film 22 are mainly determined by the thickness control of the dielectric film 22 and the pattern defined by the design, in other words, a photo-mask can be used. The array metal layer 221 design of the resistor-capacitor array pattern defined thereon, such as different area, matrix pattern design and film thickness, for dielectric plating on the Si 1 icon Substrate 21 and thereon The thickness of the film 22 is controlled to produce a plurality of resistors and capacitors having different resistance values or capacitance values, and a circuit pattern in which J 9 is electrically connected to each other. At the same time, the multifunctional thin film resistor-capacitor array 2 can be directly bonded to the array metal layer 221 of the resistor-capacitor array pattern.
1311370 (Die bond ),及打線製程（wire bond)，而連接之一面視 同導通點，也因此利於應用在光纖通訊收光模組3及其產 品之電路與光學設計。 再請參閱第八、九圖所示，係本發明之多功能薄膜電 阻-電容陣列一實施例，應用於光纖通訊收光模組之封裝 與電路架構示意圖。如圖所示：該光纖通訊收光模組3包 括有：一基座31具有複數個端子311 、—本發明之多功能 薄膜電阻—電容陣列2，於其單-晶片上設有電阻23、電 谷24、25，並4晶於基座31表面，一光彳貞測器 (Ph〇t〇d1〇de ) 32、一轉阻放大器（TIA，transi即edance amplif ier)33，以配合T〇-can架構封裝所構成。 上述之光偵測器32係利用黏晶製程（Die b〇nd ),即 以銀膠直接黏晶（Die bond )於多功能薄膜電阻-電容陣 列2之一電容25上，換言之，係由多功能薄膜電阻-電容 陣列2替代習知之光學次基座（〇ptcai substrate )作為 光偵測器（Photodiode ) 32之光學基座，並利用半導體研 磨製程，而隨意調整多功能薄膜電阻-電容陣列2之晶片 厚度’以調整符合光偵測器（Photodiode ) 32所需之收光 高度位置，並透過打線製程（Wire b〇nd),連接上述光偵測 器（Photodiode ) 32、轉阻放大器（TIA ,打如以即⑼肪沈 ampllfier)33、多功能薄膜電阻_電容陣列2之各電阻烈、 電容24 U及基座31之複數個端子311 :以形成電路結 構，如第九圖所示。 再請參閱第十、十一圖戶斤 示，係本發明之多功能薄膜 1311370 電阻-電容陣列另一實施例，庫 愿用於先纖通訊收光模組之 封衣兵電路架構示意圖。如圖所 吓不.本貫施例與上述第 八、九圖大致相同，所不同處^: ^ ± t在於5玄多功能薄膜電阻-雷 谷陣列2 ,係依所需電路設計努 衣成具有不同電容值之多 數電谷24、25、27之組合，光伯、、p,丨哭^ 、利 口口（ Photodiode ) 32 亦 二曰:（㈣則於多功能薄膜電阻-電容陣列2之一電 谷25上’由多功能薄膜電阻_ 甩谷陣列2调整光偵測器 〔Photodiode ) 32符合所需之此止^ ώ 制铲rw. κ π而之收先雨度位置，並透過打線 衣，（wlre bond)連接上述光偵測器（ph_ :放大器⑽’ transi_ance卿π_3、多功能』 黾阻-電容陣列2之各電定？4 0 、、 Q11 各電谷24、25、27，以及基座31之複 數^子311以形成電路結構，如第十-圖所示。 嫩述本發明之多功能薄膜電阻_電容陣列… 用於光纖通訊收光模組，包括有下列優點： … a )利用半導體製程容易製作，設計調整介電層厚产 或其上的圖樣達到單一晶片 曰又 ^ ^ 具有多數不同電阻值、雷 谷值之笔阻、電容或其二者 ,,.,, 配組合，容易設計及生產。 b)物料及生產成本低。 c )可達到一顆晶粒中 气曰Γ η. κ 4、 守3有夕顆被動元件’減少 ，占曰“一0次數’而節省封裝工時。 路027=路需求則衫（_-祕）上之電 電容間作電路連接，減少打線 (Wire bond)次數，也節省封裳工時。 e )可利用半導體研 τ纪衣私’研磨上述矽基板之厚 1311370 作，或= =平面：厚度，或選擇所須厚度之晶片製 製作所須厚度，以：：3陣列的圖樣後再配合研磨製程 所製成電阻:電= 度達到光學高度，又不影響 心二粒、打線方便，而利於應用在光 .L收先挺組及其產品之電路與光學設計。 上述僅為本發明之輕住电 、， 發明f γ A网 貝 ’並非用來限定本 化二Γ:Γ依本發明申請專利範圍所做的均等ί 飾，白為本發明專利範圍所涵蓋。 【圖式簡單說明】 =。圖係習知光纖通訊收光模組實施例之封裝架構示意 圖係習知應用於光纖通訊收光模經之〜 結構側視圖。 电令凡件貫施例 意圖⑽白知另一光纖通訊收光模組實施例之封裳架構示 f四圖係f知應用於光纖通訊收光模組之另—办_ 施例結構侧視圖。 电谷元件實 第五圖係習知另一光纖通訊收光模組 圖。 j又电路結構 、圖係本發明一實施例 < 製法流程圖。 第七圖係本發明一實施例之結構侧視圖。 罘八圖係本發明一實施例應用於光 架構示意圓。 k組之封裝 13 IJ11370 第九圖係本發明一 結構圖。 ’屬丨應用於光纖通訊收光模組之電路 第十圖係本發明另一實施例應 裝架構示意圖。 ％ ;先纖通訊收光模組之封 第十一圖係本發明另—實施例 電路結構圖。 “；光纖通訊收光模組之1311370 (Die bond), and wire bond, and the connection side as the conduction point, is therefore beneficial to the circuit and optical design of the fiber optic communication receiver module 3 and its products. Referring to the eighth and ninth drawings, an embodiment of the multifunctional thin film resistive-capacitor array of the present invention is applied to a package and circuit architecture of a fiber optic communication receiving module. As shown in the figure, the optical fiber communication receiving module 3 includes: a base 31 having a plurality of terminals 311, the multifunctional thin film resistor-capacitor array 2 of the present invention, and a resistor 23 disposed on the single-wafer; The electric valleys 24, 25, and 4 are crystallized on the surface of the pedestal 31, a photodetector (Ph〇t〇d1〇de) 32, and a transimpedance amplifier (TIA, transi edance amplif ier) 33 to match the T 〇-can architecture package. The photodetector 32 described above utilizes a die bonding process (Die b〇nd), that is, a direct bond of silver paste to a capacitor 25 of the multi-function thin film resistor-capacitor array 2, in other words, a plurality of The functional thin film resistor-capacitor array 2 replaces the conventional optical sub-base (〇 ptcai substrate) as an optical base of the photodiode 32, and utilizes a semiconductor polishing process to adjust the multifunctional thin film resistor-capacitor array 2 at will. The thickness of the wafer is adjusted to meet the position of the light-receiving height required by the photodiode 32, and is connected to the photodetector (Photodiode) 32 through a wire-bonding process (Wire 〇 32) 32, a transimpedance amplifier (TIA) , as shown in the ninth figure, the multi-layer thin film resistor _ capacitor array 2 of each of the resistors, the capacitor 24 U and the plurality of terminals 311 of the pedestal 31: to form a circuit structure, as shown in the ninth figure. Referring to the tenth and eleventh figures, it is a multi-functional film of the present invention. Another embodiment of the resistor-capacitor array of the 1311370 is intended to be used for the circuit structure diagram of the sealer of the fiber-optic communication light-receiving module. As shown in the figure, this example is roughly the same as the above-mentioned eighth and ninth figures. The difference is ^: ^ ± t lies in the 5 Xuan multi-function thin film resistor - Thunder Valley array 2, which is designed according to the required circuit. A combination of most electric valleys 24, 25, and 27 with different capacitance values, light, p, crying, and photodiode 32 are also two: (4) in one of the multi-function thin film resistor-capacitor array 2 On the electric valley 25' is adjusted by the multi-function film resistor _ 甩谷Array 2 photodetector [Photodiode] 32 meets the required requirements ^ ώ shovel rw. κ π and the position of the rain, and through the sweater (wlre bond) is connected to the above photodetector (ph_: amplifier (10) 'transi_ance π_3, multi-function 黾 - - 电容 电容 电容 电容 电容 电容 电容 电容 电容 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 24 24 24 24 24 24 24 24 24 24 24 24 The plurality of 311 of the pedestal 31 forms a circuit structure, as shown in the tenth-figure. The versatile thin film resistor _capacitor array of the present invention is used for the optical fiber communication receiving module, and has the following advantages: ... a ) It is easy to manufacture by semiconductor process, and the design adjusts the thickness of the dielectric layer or the pattern on it to reach a single crystal. ^ ^ And having a majority of said different resistance values, resistance pen valley of the mine, or both capacitors ,,. ,, in combination with easy design and production. b) Low material and production costs. c) can reach a gas enthalpy in a grain η. κ 4, 守3 has a passive component of the eve of the 'reduction, accounting for "a 0 times" and save the package man-hours. Road 027 = road demand shirt (_- The electrical capacitance between the capacitors is used to make circuit connections, which reduces the number of wire bonds and saves the working hours. e) It is possible to use the semiconductor to grind the thickness of the germanium substrate 1311370, or = = plane : thickness, or thickness required for wafer fabrication to select the required thickness, to: 3 array of patterns and then with the grinding process to make the electrical resistance: electricity = degree to reach the optical height, without affecting the heart two, easy to wire, and It is advantageous to apply the circuit and optical design of the optical group and its products. The above is only the light-storage power of the present invention, and the invention f γ A mesh is not used to limit the localization: according to the invention The equal scope of the patent application scope is covered by the scope of the invention. [Simplified description of the diagram] =. The schematic diagram of the package architecture of the optical fiber communication receiving module embodiment is applied to optical fiber communication. The light-receiving mold passes through the structure side view. The embodiment of the invention is intended to be used in another embodiment. (10) The other part of the optical fiber communication light-receiving module is shown in the figure. The fifth figure is a conventional optical fiber communication light-receiving module diagram. The circuit structure and the diagram are an embodiment of the present invention. The seventh embodiment is a side view of the structure of an embodiment of the present invention. The eighth embodiment of the present invention is applied to a schematic circle of an optical architecture. The package of the k group 13 IJ11370 The ninth diagram is a structural diagram of the present invention. 'The tenth diagram of the circuit applied to the optical fiber communication receiving module Another embodiment of the invention should be installed in a schematic diagram. The first embodiment of the first fiber-optic communication light-receiving module is a circuit structure diagram of another embodiment of the present invention.
【主要元件符號說明】 習知主要元件符號說明： 1光纖通訊收光模組 12光偵測器 14轉阻放大器 16、16’ 、18、18’ 電容 162 、163金屬層 11基座 13、19光學次基座 15、Π電阻 161介電質層 本發明主要元件符號說明：[Main component symbol description] Conventional main component symbol description: 1 optical fiber communication light collection module 12 optical detector 14 transimpedance amplifier 16, 16', 18, 18' capacitor 162, 163 metal layer 11 pedestal 13, 19 Optical sub-base 15, Π resistor 161 dielectric layer Description of the main components of the present invention:
2多功能薄膜電p且 21梦基板 22介電薄膜 24、25、27 電容 31基座 33轉阻放大器 电各陣列3光纖通訊收光模組 221陣列金屬層 23電阻 26金屬層 32光偵測器 步驟800〜8082 multi-function film power p and 21 dream substrate 22 dielectric film 24, 25, 27 capacitor 31 pedestal 33 transimpedance amplifier power array 3 fiber optic communication light collection module 221 array metal layer 23 resistance 26 metal layer 32 light detection Steps 800 to 808
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