1310575 玖、發明說明： 【發明所屬之技術領域】 本發明有關於場發射顯示器（FED)其中該場發射裝置適 用於平面顯示器，且尤其有關於場發射顯示器其中一閘極 板具有-間極孔及-繞著閘極孔之閘極，該閑極板形成在 一具螢光物之陽極板與一陰極板之間，該陰極板具有一場 射極及-控制裝置以控制場發射電流，其中陰極板之場射 極建構成與通過閘極孔之陽極板之螢光物相對。 【先前技術】 場發射顯示器是一種藉由將陰極板的場射極發射的電子 撞擊陽極板的螢光物，經由螢光物的陰極發光以顯示影像 的裝置，其中陰極板具有場射極而陽極板具有螢光物，二 者相對形成者且之間以某一距離(如2 mm)的真空而分開。 近來由於平面顯示器能取代習知的陰極射線管（crt)，所以 許多的研發集中在場發射顯示器。場射極中的電子發射效 率疋易發射顯示器的核心組成元素，它是依裝置結構，射 極材料及射極形狀而定。 %發射顯示器裝置的結構可主要分為：二極體型其具有 陰極U射極）及陽極’及三極體型其具有陰極，閘極及陽 t射極材料一般是金屬’矽，鑽石類碳，碳奈管等，通 吊金屬及矽可製造出三極體結構，而鑽石，碳奈管等可製 造出二極體結構。 一極體場射極一般是藉由製造出鑽石或碳奈管臈形狀而 形成一極體場射極的優點是製程簡化及電子發射的高度 90404-951124.doc 1310575 可罪f生吏與二極體場射極相比它的缺點是電子發射的 可控度及低電壓驅動。 以下將參考附圖以說明具有場射極的習知場發射顯示 器。 圖1的立體圖示意的說明具二極體場射極的習知場發射 顯示器結構。 陰極板具有.帶狀的陰極Η，位於低玻璃基板1⑽上及 膜狀場射極材料12位於其—部分上。陽極板具有：帶狀的 透明陽極13位於上玻璃基板1〇τ及紅（R)，綠（G)及藍（β)的發 光物14位於其一部分上。陰極板及陽極板是平行地真空封 裝，且藉由使用間隔層15作為支架而互相面對。陰極板的 陰極11及陽極板的透明陽極13是互相交又，上述的交又區 域定義為像素。 在圖1的場發射顯示器中，電子發射所需的電場是由陰極 11與陽極13間的電壓差而供給，已注意到當施加到場射極 材料的電場大於0.1 ν/μηι時，一般會在場射極中發生電子 發射。 圖2顯不場發射顯示器其可去除圖丨場發射顯示器的缺 點，圖2示意的說明習知場發射顯示器的結構，其使用控制 裝置以控制陰極板的各像素中的場射極。 陰極板包括：帶狀的掃描信號線21S及資料信號線21d， 其由玻璃基板20B上的金屬形成且能作電的列/行定址，膜 (薄膜或厚膜）狀場射極22，其中掃描信號線21S及資料信號 線21D定義的各像素是由鑽石，鑽石類碳，碳奈管等形成， 90404-951124.doc 1310575 及控制裝置23接到掃描信號線21S，資料信號線2ι〇及場射 極22以控制場發射電流，這是依顯示器的掃描及資料信號 定陽極板包括·▼狀的透明陽極24位於玻璃基板 上，及紅（R)’綠（G)及藍（Β)的螢光物25位於其一部分上。 陰極板及陽極板是平行地真空封裝，且藉由使用間隔層％ 作為支架而互相面對。 在圖2的场發射顯示器中，施加高電麼在陽極μ以便從陰 極板的膜狀場射極22中感應電子發射且同時加速具高能量 的發射電子。接著若顯示器的信號經由掃描信號線川及資 Μ號線21D而輸人控制裝置23，則控制裝置23可控制㈣ 狀場射極發射的電子量以表示列/行影像。 二極體場射極用於圖1及2的場發射顯示器，如上所料 具有的優點是結構簡單且製程容易，這是因為不同於錐狀 二極體場射極它不需要間極及閘極絕緣膜。 二Si二極體場射極在發射電子時藉由濺擊效應而使場 ==機率極低，所以它的可靠性高而且無三極體場 的問題如間極及閘極絕緣體的破壞現象。 需的具Λ二極體場射極的場發射顯示器中，場發射所 明陽極”、&加通過上與下板的電極(圖1的陰極u及透 明 1% 極 13)，兮 —分開，以。便需要且古的距離（一般是200㈣到2 需要f主Μ人 八门電壓的顯不仏號。結果，缺點是 13貝的向電壓驅動電路。 電====:的場發射顯__，雖然 電壓可藉由減少上板與下板間的距離而減 90404-951124.doc 1310575 低，但是由於使用陽極13作為電子的加速電極以及顯 =”，所以低電壓驅動幾乎是不可能。在場發射顯: …而要大於200 eV的高能量電子以發射螢光 能量愈高則照明效率愈佳。因此 子 能得到高亮度的場發射顯示器。加同到陽極才 在具有二極體場射極的習知主動矩陣場發射顯示器中 2)’使用場射極的控制裝置23在各像素中，且藉由將輸 入顯不信號通過它’主動矩陣場發射顯示器可解決圖【的高 電：驅動問題及同時解決以下問題如電子發射的不均勻， 串音等。惟施加到陽極24用於場發射及電子加速的高電壓 會在各像素的控制裝置23中感應高電壓，而且若感應電壓 南於控制裝置23的破壞電壓，則控制裝置會失效。 因此習知主動矩陣場發射顯示器的缺點是：依控制裝置 23的破壞特徵施加到陽極24的電壓是有限的，且由於陽極 電壓有限所以難於製造具高亮度的場發射顯示器。 【發明内容】 因此本發明已指出上述問題，所以本發明意欲藉由施加 場發射顯示H的掃描及㈣㈣到各像素的㈣裝置而明 顯減少顯示器列/行驅動電壓。 而且本發明意欲提高場發射顯示器的亮度，依此場發射 所需的電場施加通過閘極板的閘極以自由控制陽極板與陰 極板之間的距離，以便施加高電壓到陽極。 此外本發明意欲允許分開製造閘極板及陰極板再組 °以利於製程的執行，且藉由基本上去除場射極的閘極 90404-951124.doc 1310575 絕緣膜破壞而增加產量及良率。 為了達成上述目的，根攄太膝ηΗΛΑ & 课丰發明的特點而提供一種具閘 極板之場發射顯示器，包括：一陽極板，在一基板上具有 -透明極及-螢光物在部分透明極上；一陰極板，具有帶 狀列/行信號線，而能在基板上作列/行^，及複數個像 素，各由列信號線及行信號線定義，其中各像素具有一膜 狀場射極及一控制裝置以控制場射極，具有二終端連接至 至少列/行信號線及-終端連接至膜狀場射極；—閘極板， 具有穿透其中之閑極孔及繞著閘極孔上面之閘極；及複數 個間隔層’用以支撐陰極板與陽極板間之閘極板，其中陰 極板之昜射極建構成與通過閘極孔之陽極板之螢光物相 對’且藉由真空封裝而形成。 在根據本發明另—實例的上述具閘極板之場發射顯示器 中，陽極板，陰極板及閘極板最好由不同絕緣基板形成。 在根據本發明另一實例的上述具閘極板之場發射顯示器 中，間隔層最好形成在陰極板與閘極板之間及在陽極板與 閘極板之間。 Λ 在根據本發明另一實例的上述具閘極板之場發射顯示器 中’各像素之螢光物係紅（R)，綠（G)或藍（Β)之螢光物。 此外在根據本發明另一實例的上述具閘極板之場發射顯 示器十’一蔽光膜（黑色矩陣）更形成在陽極之螢光物間之— 給定區域中。 較佳的，場射極由包括一鑽石，一鑽石碳，或一碳奈管 之薄膜或厚膜形成，及控制裝置係一薄膜電晶體或一金氧 90404-951124.doc 10· 1310575 半場效電晶體。 在根據本發明另一實例的上述具閘極板之場發射顯示器 中，施加一DC電壓至閘極俾從陰極板之膜狀場射極感應— 電子發射；藉由施加DC電壓至陽極板之透明極而以高能量 加速發射之電子；及將掃描及資料信號定址在陰極板之各 像素中場射極之控制裝置，藉此場射極之控制裝置控制場 射極之電子發射以表示影像。 此外施加50至1500 V範圍中之DC電壓至閘極板之閘 極，及施加大於2kV之DC電壓至陽極板之透明極，且經由 控制裝置之控制藉由改變施加至場射極之資料信號電壓之 脈波振幅及/或脈波寬（時間長）’且施加至場射極之資料信 號電壓最好在0至50 V範圍中之脈波。 在根據本發明另一實例的上述具閘極板之場發射顯示器 中’電子聚集極更形成在陰極板與閘極板之間，該電子聚 集極有助於從場射極發射之電子良好聚集在陽極板之螢光 物上’及更藉由施加定電壓至該電子聚集極而抑制藉由陽 極電壓以及閘極板之該閘極之場射極之場發射，該電子聚 集極最好意欲作為一蔽光膜。 在根據本發明另一實例的上述具閘極板之場發射顯示器 中，場射極包括複數個點分成複數個區域，而閘極板之閘 極孔具有對應各點之數目。 此外’控制裝置係一薄膜電晶體’其包括：一金屬閘極， 在陰極板上；一形成在陰極板之閘極絕緣膜，包括閘極； 一由半導體薄膜製造之活化層，在閘極及閘極絕緣膜之一 90404-951124.doc -11 - 1310575 。丨刀上；一源極及一汲極形成在活化層之二端；及一中間 層絕緣層’具有一接觸孔以連接源極及汲極至電極。 此外在上述場發射顯示器中，由金屬製造之電子聚集極 更形成在中間層絕緣層上，及薄膜電晶體之活化層由非晶 矽或聚矽層組成，且較佳地，中間層絕緣膜由非晶氮化矽 膜或氧化矽膜組成。 【實施方式】 與習知相比本發明場發射顯示器的明顯不同在於：陰極 板，閘極板結構及驅動它的方法，以下將參考圖3到8以詳 細說明根據本發明的場發射顯示器。 圖3的立體圖示意的說明根據本發明具閘極的主動矩陣 場發射顯示器結構，而圖4的立體圖示意的說明在根據本發 明場發射顯示器中的陰極板，閘極板及陽極板，場發射顯 示器包括陰極板100，閘極板200及陽極板3〇〇。 圖4的陰極板1〇〇包括一帶狀列信號線12〇s及行信號線 120D在包括玻璃，塑膠，各種陶磁等的絕緣基板11〇上，其 内帶狀列信號線及行信號線是由金屬製造，且能作列/行定 址。列信號線120S及行信號線120D界定單位像素，各像素 包括.由鑽石，鑽石類碳，碳奈管等製造的膜狀（薄膜或厚 膜）場射極130，及場射極的控制裝置14〇。控制裝置14〇最 好包括2終端連接到至少列信號線12〇s及行信號線12〇〇及 一終端連接到膜狀場射極130。如控制裝置14〇是非晶薄膜 電晶體，聚矽薄膜電晶體，金氧半場效電晶體等。 閘極板200包括：閘極孔220穿透一基板21〇，及金屬閘極 90404-951124.doc •12· 1310575 230在閘極孔220四周。閘極板200的基板21〇可由透明基板 (如玻璃，塑膠，各種陶磁，各種透明絕緣基板等）形成，且 若必要時，可使用不透明基板作為基板。閘極板2〇〇的厚度 可以是0.01至1.1 mm而閘極的厚度是數百埃至數千埃，用 於閘極230的金屬是鉻，鋁，鉬等，但不限於此。此外，閘 極孔220可形成為稍大於各像素，以便孔22〇可作為形成在 陰極板1〇〇中的單位像素的孔（如數+ μηι至數百μιη)。熟於 該技藝者可了解閘極孔220的大小’剖面的形狀，閘極板2〇〇 的厚度，閘極230的厚度，形狀及與場射極13〇分開的距離 等並未特別限制，是可以作各種改變。 1¼極板300包括一透明極320，及形成在部分透明極320 上的紅（R) ’綠（G)及藍（B)的螢光物，在玻璃，塑膠，各種 陶磁等製造的透明極320絕緣基板3 10上如圖4所示。 同時在陰極板100,閘極板2〇〇及陽極板300中，陰極板100 的場射極130通過閘極板2〇〇的閘極孔220而平行於陽極板 3〇〇的螢光物330真空封裝，同時藉由使用間隔層4〇〇作為支 架而互相面對（圖3及4)，間隔層400可由玻璃珠，陶磁，聚 合物等製造，且具有約200 μιη到3 mm範圍的高度。 另一方面藉由選擇作為閘極230使用的金屬類型或膜 厚，閘極230也可作為蔽光膜使用。 接著將參考圖5以詳細說明根據本發明實例的製造場發 射顯示器的方法。圖5的剖面圖說明根據本發明的場發射顯 示器的單位像素。 在圖5實例中’閘極板貼在陰極板，而陽極板與閘極板藉 90404-951124.doc •13· 1310575 由陽極板與閘極板間支撐的間隔層而與閘極板分開且真空 封裝可为開製造陰極板，閘極板及陽極板然後再組裝。 圖5場發射顯示器的單位像素包括陰極板，閘極板及陽極 板，陰極板具有：基板11〇，薄膜電晶體元件，場射極等。 薄膜電晶體元件包括：在基板11〇上的金屬閘極141，薄 臈電晶體的閘極絕緣膜142其由非晶氮化矽（a_SiNx)膜或氧 化矽膜組成，在包括閘極141的基板11〇上，薄膜電晶體M3 的活化層由非晶矽（a_Si)形成在閘極141及閘極絕緣膜142 的σ卩分上’薄膜電晶體的源極144及没極145由η型非晶石夕 形成在活化層143的二端，薄膜電晶體的金屬源極146形成 在源極144及閘極絕緣臈142的一部分上，薄膜電晶體的金 屬汲極147形成在汲極145及閘極絕緣膜142的一部分上，薄 膜電晶體的源極146 ’及一中間層絕緣膜（純化絕緣膜）148， 由非晶氮化矽膜或氧化矽膜組成，在薄膜電晶體的活化層 143及源極146及汲極147的一部分上。同時由金屬製造的電 子聚集極149位於部分中間層絕緣膜148中，電子聚集極149 可作為蔽光薄膜及藉由施加適當電壓而執行將場射極13〇 射出的電子聚集的功能。場射極130可由鑽石，鑽石類碳， 碳奈管等製造形成在薄膜電晶體的部分汲極147上。 無閘極230的閘極板的表面貼在陰極板，此時該閘極板是 根據陰極板的場射極130而排列，使用間隔層4〇〇作為二者 之間的支架而與閘極板分開。此外該陽極板相對於陽極板 的螢光物330及陰極板的場射極130而排列且真空封裝。間 隔層400可維持陰極板/閘極板與陽極板之間的隔離，它不 90404-951124.doc • 14 - 1310575 必安裝在每一像素中。 閘極板包括閘極孔220,其藉由穿透玻璃基板210及金屬 閘極230(在閘極孔220四周）而形成。 陽極板包括：形成在部分基板31〇上的透明極32〇，形成 在部分透明極320上的紅綠藍螢光物33〇，及形成在該等螢 光物330之間的黑色矩陣34〇。 另一方面’由於閘極板及陰極板可分開製造，所以利於 製程的執行且大致可去除場射極中的閘極絕緣膜，因此分 開製造的閘極板，陰極板及陽極板可組裝在一起，結果， 能大幅增加產量及場發射顯示器的良率。 以下將參考圖3到5以說明根據本發明的場發射顯示器的 驅動原理。 施加50到1500 V的DC電壓到閘極板的閘極230以便從陰 極板的膜狀場射極13〇感應出電子發射，同時藉由施加大於 2 kV的高電壓到陰極板的透明極32〇而以高能量加速該射 出的電子。同時，藉由調整施加到顯示器的列信號線12〇s 及行信號線120D的電壓而能控制陰極板的各像素中的場射 極的控制裝置操作。換言之，藉由控制場射極13〇的場發射 可以使各像素中的場射極的控制裝置14〇表示一影像。 此時施加到閘極板的閘極230的電壓可抑制陽極電壓導 致場射極的電子發射，而且藉由在陽極板與閘極板之間形 成較均勻的電位也防止區域彎曲。施加到顯示器的列信號 線120S及行信號線120D的電壓又施加到薄臈電晶體的閘極 及源極。當具有非晶矽製造的活化層的薄臈電晶體導通且 90404-951124.doc -15- 1310575 於電晶體截止時是小於5 V或負電壓時，施加到薄膜電晶體 閘極的電壓可以在5 VWOV之間，此外施加到源極的^壓 約在〇到50 V的範圍中，如上所述可由外部驅動電路（未示） 控制施加的電壓。 接著說明場發射顯示器的灰階表示。 使用脈波寬調變（PWM)模式可實作出共同場發射顯示器 的灰階表示，該模式是指可控制施加到場射極的資料信號 的電壓時間以表示灰階。其中以某一時間發射的電子量中 的差來表示灰階，換言之，若某一時間中的電子量报多， 則一對應像素發出具高亮度的光’惟該模式有一臨界值， 其中給予單位像素的脈波的寬度（時間）在實作出大型高解 析度螢幕時會漸減，此外它有一問題即難以準確控制發射 的電子量。 根據本發明的驅動方法可克服上述問題，場發射顯示器 的灰階表示可使用脈波寬調變（PWM)模式或脈波振幅調變 (PAM)模式，或是其合併。PAM模式是指根據施加到資料信 號的振幅差而表示灰階。此模式利用送入場射極的電子量 可藉由施加到源極的電壓位準差而改變，這是在薄膜電晶 體導通的狀態中。藉由將位準分成複數個位準而表示灰 階’此驅動方法也適用於實作出大尺寸螢幕及控制定量的 電子發射。 同時施加一定電壓到電子聚集極149以有助於從場射極 130發射的電子良好聚集在陽極板的螢光物130上，及因.而 抑制藉由陽極電壓以及閘極板的閘極23〇的場射極13〇的場 90404-951124.doc -16- 1310575 發射’在使用電子聚集極149作為蔽光膜的例子中，能防止 薄膜電晶體143的活化層曝露在陽極板的螢光物或四周光 線下。 現在將參考圖6到8以詳細說明本發明的其它實例及改 良。 圖6的剖面圖說明根據本發明另一實例的場發射顯示器 的像素結構。 圖6陰極板，閘極板及陽極板的結構與圖5的相同，除了 間隔層400插入閘極板與陰極板之間的那部分以外，換言 之’不具有閘極230的閘極板表面貼在陽極板上。 圖7的剖面圖說明根據本發明又一實例的場發射顯示器 的像素結構。 圖7陽極板的結構與圖5的相同，除了陰極板的場射極13〇 具有複數個點及閘極板的許多閘極孔22〇以外，以便與陰極 板中場射極13 0的點數相同。此一結構的優點是可施加高電 壓到陽極板的電極，此外它能防止陽極電場經由複數個點 而對場射極有不利的影響。 圖8的剖面圖說明根據本發明再一實例的場發射顯示器 的像素結構。 圖8陰極板及陽極板的結構與圖7的相同，除了閘極板的 閘極孔220具有雙孔：大於陽極板的螢光物34〇的大孔及對 應陰極板的場射極130的小孔，不具有閘極23〇的閘極板表 面貼在陽極板上，及藉由真空封裝而形成陰極板，這是在 一狀態其中陰極板與閘極板藉由支撐在二者之間的間隔層 90404-951124.doc -17- 1310575 而分開。 上述實例只是典型，不該解釋為限制本發明，本發明的 教示適用於它種裝置，本發明的說明只是敘述性，不是限 制申請專利的範圍，熟於該技藝者可了解仍有許多替代 者，改良，及變化。 如根據本發明一改良的場發射顯示器包括：一陰極板， 一閘極板，一陽極板，及閘極板的閘極孔有一傾斜内壁， 具有傾斜内壁的閘極孔可以使從場射極射出的電子聚焦在 陽極的螢光物上，結果可以在無額外聚焦柵之下產生高解 析度。 如根據本發明另一改良的場發射顯示器包括一陰極板及 一陽極板，絕緣層可形成在圖5到8的陰極板的各上方部 分，其中場射極，控制裝置等可以在無額外閘極板之下形 成，在此，絕緣層包括具傾斜内壁的閘極孔，閘極形成在 閘極孔上方的四周。 可使用各種材料（未特別限制）以形成絕緣層，如以0.01 mm至2 mm厚度範圍來形成絕緣層，可依此形成絕緣層的閘 極孔中的傾斜内壁，且形成複數個絕緣層各有不同的蝕刻 比，接著用溼蝕刻方法而蝕刻，或是一綠板（藉由堆積絕緣 體各有不同的钱刻比而形成）藉由疊層方法而接到陰極 板’且接著退火及飯刻。 因此不必有額外的閘極板，所以可省去連接閘極板到陰 極板的過程因而可減少生產成本。 另一方面’根據其他變化版之場發射器係由一點所構 90404-951124.doc !310575 成^旦是，該場發射器包括複製圖點及相對應於該陰極板 之場發射器中的閘洞數。 如上所述根據本發明的場發射顯示器包括：由玻 $成的陽極板’陰極板及閘極板。陰極板包括信號線歧 旎作列/行定址，而列/行信號線界定各像素，其中各像素有 -膜狀場射極及場射極的控制裝置，此外，藉由輸入及驅 動顯示器的掃描及資料信號到各像素的控制裝置，可明顯 咸少顯示器的列/行驅動電壓，因此可使用便宜的低電壓驅 動電路以取代高電壓驅動電路（它是習知場發射顯示器的 列/行驅動所需的）。 同時根據本發明，由於可經由間極板的閘極而施加電場 用於％發射，所以可自由控制陽極板與陰極板之間的距 離，因而可施加高電壓到陽極。因此本發明的優點是它可 大幅增加場發射顯示器的亮度，此外施加到閑極板的閉極 的電壓可抑制場射極因陽極電壓的施加而發射電子，及藉 由在陽極板與閘極板之間形成均勻的電位而防止區域彎 曲，所以可大幅增加場發射顯示器的壽命。 此外由於可分開製造閘極板及陰極板然後再組裝，所以 J於製私的執行’且藉由基本上去除場射極的閘極絕緣膜 破壞，因此提供本發明以大幅增加場發射顯示器的產量及 良率。 此外’具有傾斜内壁的閘極孔可以使從場射極射出的電 子聚焦在陽極的螢光物上，結果可以在無額外聚焦柵之下 產生兩解析度。 90404-951124.doc -19- 1310575 已用特別實例來說明本發明，但該等實例不是限制本發 明’本發明僅由後时請專職圍定義，熟於該技藝者可 了解可以在不違反本發明的範圍及精神下改變或改良 實例。 【圖式簡單說明】 以上藉由本發明較佳實例的詳細說明且配合附圖即可更 月了本發明的上述及其它目的，特徵及優點，其中： 圖1的立體圖示意的說明具二極體場射極的習知場發射 顯示器結構， 圖2的立體圖示意的說明具三極體場射極的習知主動矩 陣場發射顯示器結構， 圖3的立體圖示意的說明根據本發明具閘極的主動矩陣 場發射顯示器結構， 圖4的立體圖示意的說明在根據本發明場發射顯示器中 的陰極板，閘極板及陽極板， 圖5的剖面圖說明根據本發明一實例的場發射顯示器的 像素結構， 圖6的剖面圖說明根據本發明另一實例的場發射顯示器 的像素結構， 圖7的剖面圖說明根據本發明又一實例的場發射顯示器 的像素結構，及 圖8的剖面圖說明根據本發明再一實例的場發射顯示器 的像素結構。 【圖式代表符號說明】 90404-951124.doc -20· 1310575 10B 下玻璃基板 10T 上玻璃基板 11 陰極 12 ， 22 ， 130 場射極 13，24 陽極 14 ， 25 ， 330 ， 340 榮光物 15 ， 26 ， 400 間隔層 20B ， 20T 玻璃基板 21S 掃描信號線 21D 資料信號線 23 ， 140 控制裝置 100 陰極板 110 ， 210 ， 310 基板 120D 行信號線 120S 列信號線 141 ， 230 閘極 142 閘極絕緣膜 143 活化層 144 ， 145 金屬 146 源極 147 汲極 148 中間層絕緣膜 149 電子聚集極 200 閘極板 90404-951124.doc -21 - 1310575 220 閘極孔 300 陽極板 320 透明極 340 黑色矩陣 90404-951124.doc -22-1310575 玖, invention description: [Technical field of the invention] The present invention relates to a field emission display (FED) in which the field emission device is suitable for a flat panel display, and particularly relates to a field emission display in which one of the gate plates has an interpole hole And - around the gate of the gate hole, the idle plate is formed between a phosphor plate anode plate and a cathode plate, the cathode plate has a field emitter and - control device to control the field emission current, wherein The field emitter of the cathode plate is constructed to oppose the phosphor of the anode plate passing through the gate hole. [Prior Art] A field emission display is a device for displaying an image by causing electrons emitted from a field emitter of a cathode plate to strike a phosphor of an anode plate to emit an image via a cathode of a phosphor, wherein the cathode plate has a field emitter The anode plate has phosphors that are separated from each other by a vacuum of a certain distance (e.g., 2 mm). Recently, since flat panel displays can replace conventional cathode ray tubes (crt), many research and development have focused on field emission displays. The electron emission efficiency in the field emitter easily emits the core components of the display, depending on the structure of the device, the shape of the emitter and the shape of the emitter. The structure of the % emission display device can be mainly divided into: a diode type having a cathode U emitter) and an anode ' and a triode type having a cathode, and the gate and the anode t emitter material are generally metal '矽, diamond-like carbon, Carbon nanotubes, etc., can be made of metal and tantalum to create a triode structure, while diamonds, carbon nanotubes, etc. can produce a diode structure. The pole field emitter is generally formed by the shape of a diamond or carbon nanotube to form a polar field emitter. The advantage of process simplification and electron emission is 90404-951124.doc 1310575 guilty f 吏 and II The disadvantage of the polar field emitter compared to its is the controllability of the electron emission and the low voltage drive. A conventional field emission display having a field emitter will be described below with reference to the accompanying drawings. The perspective view of Figure 1 illustrates a conventional field emission display structure having a diode field emitter. The cathode plate has a strip-shaped cathode crucible on the low glass substrate 1 (10) and the film-like field emitter material 12 on its portion. The anode plate has a strip-shaped transparent anode 13 on the upper glass substrate 1 〇τ and red (R), and green (G) and blue (β) luminescent materials 14 are located on a part thereof. The cathode and anode plates are vacuum-packed in parallel and face each other by using the spacer layer 15 as a holder. The cathode 11 of the cathode plate and the transparent anode 13 of the anode plate are mutually intersected, and the above-mentioned intersection area is defined as a pixel. In the field emission display of Fig. 1, the electric field required for electron emission is supplied by the voltage difference between the cathode 11 and the anode 13, and it has been noted that when the electric field applied to the field emitter material is larger than 0.1 ν/μηι, it is generally Electron emission occurs in the field emitter. 2 shows the absence of a field emission display that removes the deficiencies of the field emission display. Figure 2 illustrates the structure of a conventional field emission display that uses control means to control the field emitters in each pixel of the cathode plate. The cathode plate comprises: a strip-shaped scanning signal line 21S and a data signal line 21d formed by metal on the glass substrate 20B and capable of being electrically arranged in rows/rows, and a film (film or thick film) field emitter 22, wherein Each pixel defined by the scanning signal line 21S and the data signal line 21D is formed of diamond, diamond-like carbon, carbon nanotubes, etc., 90404-951124.doc 1310575 and the control device 23 are connected to the scanning signal line 21S, and the data signal line 2ι〇 The field emitter 22 controls the field emission current, which is based on the scanning and data signals of the display. The anode plate includes a transparent anode 24 on the glass substrate, and red (R) 'green (G) and blue (Β). The phosphor 25 is located on a portion thereof. The cathode and anode plates are vacuum-packed in parallel and face each other by using spacer layer % as a support. In the field emission display of Fig. 2, a high voltage is applied at the anode μ to induce electron emission from the film field emitter 22 of the cathode plate while accelerating electrons with high energy. Then, if the signal of the display is input to the control device 23 via the scanning signal line and the signal line 21D, the control unit 23 can control the amount of electrons emitted by the (four) field emitter to represent the column/line image. The diode field emitter is used in the field emission display of Figures 1 and 2, and has the advantages of simple structure and easy process, because it does not require a pole and a gate unlike a tapered diode field emitter. Very insulating film. The second Si diode field emitter has a very low probability of field == by the splash effect when emitting electrons, so its reliability is high and there is no problem of the triode field such as the destruction of the interlayer and the gate insulator. . In the field emission display with the field emitter of the diode, the field emission is the anode, and the electrode passing through the upper and lower plates (the cathode u and the transparent 1% pole 13 of Fig. 1) are separated. Therefore, it is necessary and the ancient distance (generally 200 (four) to 2 requires the appearance of the eight main voltage of the main squad. The result is a 13-well forward voltage drive circuit. Electric field ====: field emission __, although the voltage can be reduced by reducing the distance between the upper and lower plates by 90404-951124.doc 1310575, but because the anode 13 is used as the accelerating electrode of the electron and the display = ", the low voltage drive is almost no Possibly. The presence of the field is: ... and the high-energy electrons larger than 200 eV are used to emit the fluorescent energy. The higher the illumination efficiency, the better the illumination efficiency. Therefore, the sub-field can obtain a high-brightness field emission display. In the conventional active matrix field emission display of the body field emitter 2) 'using the field emitter control device 23 in each pixel, and by passing the input display signal through its 'active matrix field emission display can solve the figure High power: drive problems and solve the following questions at the same time Problems such as unevenness in electron emission, crosstalk, and the like. However, the high voltage applied to the anode 24 for field emission and electron acceleration induces a high voltage in the control means 23 of each pixel, and if the induced voltage is souther than the breakdown voltage of the control means 23, the control means will fail. A disadvantage of the conventional active matrix field emission display is that the voltage applied to the anode 24 in accordance with the destructive characteristics of the control device 23 is limited, and it is difficult to manufacture a field emission display having high luminance due to the limited anode voltage. SUMMARY OF THE INVENTION Accordingly, the present invention has been directed to the above problems, and the present invention is intended to significantly reduce the display column/row drive voltage by applying a scan of the field emission display H and (4) (d) to (4) devices of each pixel. Moreover, the present invention is intended to increase the brightness of a field emission display by which an electric field required for field emission is applied through the gate of the gate plate to freely control the distance between the anode plate and the cathode plate to apply a high voltage to the anode. Furthermore, the present invention is intended to allow for the separate fabrication of the gate and cathode plates to facilitate process execution and to increase throughput and yield by substantially eliminating the field emitter gate 90404-951124.doc 1310575 insulation film breakdown. In order to achieve the above object, a field emission display with a gate plate is provided, which comprises: an anode plate having a transparent electrode and a phosphor in a portion on a substrate. a transparent plate; a cathode plate having a strip-shaped column/row signal line, which can be arranged as a column/row on the substrate, and a plurality of pixels, each defined by a column signal line and a row signal line, wherein each pixel has a film shape a field emitter and a control device for controlling the field emitter, having two terminals connected to at least the column/row signal line and - terminal connected to the film field emitter; - a gate plate having a free hole and a winding therethrough a gate above the gate hole; and a plurality of spacer layers for supporting a gate plate between the cathode plate and the anode plate, wherein the cathode plate of the cathode plate is configured to form a phosphor with an anode plate passing through the gate hole Relative 'and formed by vacuum encapsulation. In the above field emission display with a gate plate according to another embodiment of the present invention, the anode plate, the cathode plate and the gate plate are preferably formed of different insulating substrates. In the above field emission display with a gate plate according to another example of the present invention, the spacer layer is preferably formed between the cathode plate and the gate plate and between the anode plate and the gate plate. In the above field emission display with a gate plate according to another example of the present invention, the phosphor of each pixel is a phosphor of red (R), green (G) or blue (Β). Further, in the above-described field emission display with a gate plate according to another example of the present invention, a light shielding film (black matrix) is formed in a given region between the phosphors of the anode. Preferably, the field emitter is formed by a film or a thick film comprising a diamond, a diamond carbon, or a carbon nanotube, and the control device is a thin film transistor or a gold oxide 90404-951124.doc 10· 1310575 half field effect Transistor. In the above field emission display with a gate plate according to another example of the present invention, a DC voltage is applied to the gate 俾 from the film field of the cathode plate to induce electron emission; by applying a DC voltage to the anode plate An electron that is transparent and accelerates emission at high energy; and a control device that positions the scanning and data signals in the field emitters of each pixel of the cathode plate, whereby the field emitter control device controls the electron emission of the field emitter to represent the image . In addition, a DC voltage in the range of 50 to 1500 V is applied to the gate of the gate plate, and a DC voltage greater than 2 kV is applied to the transparent electrode of the anode plate, and the data signal applied to the field emitter is changed by control of the control device. The pulse amplitude and/or pulse width (time length) of the voltage and the data signal voltage applied to the field emitter are preferably in the range of 0 to 50 V. In the above field emission display with a gate plate according to another example of the present invention, an electron collecting electrode is further formed between the cathode plate and the gate plate, and the electron collecting electrode contributes to good electron emission from the field emitter. On the phosphor of the anode plate and further suppressing the field emission by the anode voltage and the field emitter of the gate of the gate plate by applying a constant voltage to the electron collector, the electron collector is preferably intended As a light shielding film. In the above field emission display with a gate plate according to another example of the present invention, the field emitter includes a plurality of dots divided into a plurality of regions, and the gate holes of the gate plates have the number of corresponding dots. In addition, the 'control device is a thin film transistor' which comprises: a metal gate on the cathode plate; a gate insulating film formed on the cathode plate, including a gate; and an active layer made of a semiconductor film at the gate And one of the gate insulating films 90404-951124.doc -11 - 1310575. On the file, a source and a drain are formed at both ends of the active layer; and an interlayer insulating layer ' has a contact hole for connecting the source and the drain to the electrode. Further, in the above field emission display, an electron collecting electrode made of a metal is formed on the interlayer insulating layer, and an active layer of the thin film transistor is composed of an amorphous germanium or a germanium layer, and preferably, an interlayer insulating film It consists of an amorphous tantalum nitride film or a tantalum oxide film. [Embodiment] A significant difference of the field emission display of the present invention in comparison with the conventional one is: a cathode plate, a gate plate structure, and a method of driving the same, and a field emission display according to the present invention will be described in detail below with reference to Figs. 3 is a perspective view schematically showing an active matrix field emission display structure with a gate according to the present invention, and FIG. 4 is a perspective view schematically illustrating a cathode plate, a gate plate and an anode plate in a field emission display according to the present invention, and field emission The display includes a cathode plate 100, a gate plate 200, and an anode plate 3''. The cathode plate 1 of FIG. 4 includes a strip-shaped column signal line 12 〇 s and a row signal line 120D on an insulating substrate 11 包括 including glass, plastic, various ceramics, etc., and the inner strip-shaped signal line and the row signal line It is made of metal and can be listed as a column/row. The column signal line 120S and the row signal line 120D define unit pixels, and each pixel includes a film-like (film or thick film) field emitter 130 made of diamond, diamond-like carbon, carbon nanotubes, etc., and a field emitter control device. 14〇. The control unit 14 preferably includes 2 terminals connected to at least the column signal lines 12 〇 and the line signal lines 12 〇〇 and a terminal connected to the film field emitter 130. For example, the control device 14 is an amorphous thin film transistor, a polycrystalline thin film transistor, a gold oxide half field effect transistor, or the like. The gate plate 200 includes a gate hole 220 penetrating a substrate 21A, and a metal gate 90404-951124.doc • 12· 1310575 230 around the gate hole 220. The substrate 21 of the gate plate 200 may be formed of a transparent substrate (e.g., glass, plastic, various ceramics, various transparent insulating substrates, etc.), and if necessary, an opaque substrate may be used as the substrate. The thickness of the gate plate 2 可以 may be 0.01 to 1.1 mm and the thickness of the gate electrode may be several hundreds angstroms to several thousands angstroms. The metal used for the gate electrode 230 is chromium, aluminum, molybdenum or the like, but is not limited thereto. Further, the gate hole 220 may be formed to be slightly larger than each pixel so that the hole 22's may serve as a hole (e.g., number + μηι to several hundred μηη) of a unit pixel formed in the cathode plate 1〇〇. Those skilled in the art can understand the shape of the size of the gate hole 220, the thickness of the gate plate 2, the thickness of the gate 230, the shape and the distance from the field emitter 13〇, etc., etc., and are not particularly limited. It is possible to make various changes. The 11⁄4 plate 300 includes a transparent pole 320, and red (R) 'green (G) and blue (B) phosphors formed on the partially transparent pole 320, and transparent fins made of glass, plastic, various ceramics, etc. The 320 insulating substrate 3 10 is as shown in FIG. At the same time, in the cathode plate 100, the gate plate 2〇〇 and the anode plate 300, the field emitter 130 of the cathode plate 100 passes through the gate hole 220 of the gate plate 2〇〇 and is parallel to the phosphor of the anode plate 3〇〇. The 330 vacuum package, while facing each other by using the spacer layer 4 as a support (Figs. 3 and 4), the spacer layer 400 may be made of glass beads, ceramics, polymer, etc., and has a range of about 200 μm to 3 mm. height. On the other hand, by selecting the metal type or film thickness used as the gate 230, the gate 230 can also be used as a light shielding film. Next, a method of manufacturing a field emission display according to an example of the present invention will be described in detail with reference to FIG. Fig. 5 is a cross-sectional view showing a unit pixel of a field emission display according to the present invention. In the example of Figure 5, the gate plate is attached to the cathode plate, and the anode plate and the gate plate are separated from the gate plate by a spacer layer supported between the anode plate and the gate plate by 90404-951124.doc • 13· 1310575. The vacuum package can be used to manufacture cathode plates, gate plates and anode plates and then assembled. The unit pixel of the field emission display of Fig. 5 comprises a cathode plate, a gate plate and an anode plate, and the cathode plate has a substrate 11 〇, a thin film transistor element, a field emitter and the like. The thin film transistor element includes: a metal gate 141 on the substrate 11?, and a gate insulating film 142 of the thin germanium transistor, which is composed of an amorphous tantalum nitride (a_SiNx) film or a hafnium oxide film, including the gate electrode 141. On the substrate 11, the active layer of the thin film transistor M3 is formed of amorphous germanium (a_Si) on the σ 卩 of the gate 141 and the gate insulating film 142. The source 144 and the gate 145 of the thin film transistor are n-type. Amorphous stone is formed at both ends of the active layer 143, a metal source 146 of the thin film transistor is formed on a portion of the source electrode 144 and the gate insulating germanium 142, and a metal drain 147 of the thin film transistor is formed on the drain 145 and On a portion of the gate insulating film 142, a source 146' of the thin film transistor and an interlayer insulating film (purified insulating film) 148 are composed of an amorphous tantalum nitride film or a hafnium oxide film, and an active layer of the thin film transistor. 143 and a portion of the source 146 and the drain 147. At the same time, the electron collector electrode 149 made of metal is located in the portion of the interlayer insulating film 148, and the electron collector electrode 149 functions as a light-shielding film and performs aggregation of electrons emitted from the field emitter 13 by applying an appropriate voltage. The field emitter 130 may be formed on a portion of the drain 147 of the thin film transistor by diamond, diamond-like carbon, carbon nanotubes or the like. The surface of the gate plate without the gate 230 is attached to the cathode plate. At this time, the gate plate is arranged according to the field emitter 130 of the cathode plate, and the spacer layer 4 is used as a support between the gate and the gate. The boards are separated. Further, the anode plate is aligned with respect to the phosphor 330 of the anode plate and the field emitter 130 of the cathode plate and vacuum-packed. The spacer 400 maintains the isolation between the cathode plate/gate plate and the anode plate, and it is not required to be mounted in each pixel. The gate plate includes a gate hole 220 formed by penetrating the glass substrate 210 and the metal gate 230 (around the gate hole 220). The anode plate includes: a transparent pole 32〇 formed on a portion of the substrate 31〇, a red-green-blue phosphor 33〇 formed on the partial transparent electrode 320, and a black matrix 34 formed between the phosphors 330〇 . On the other hand, since the gate plate and the cathode plate can be separately manufactured, the execution of the process is facilitated and the gate insulating film in the field emitter can be substantially removed, so that the separately manufactured gate plate, cathode plate and anode plate can be assembled in Together, as a result, the yield and field emission display yield can be significantly increased. The driving principle of the field emission display according to the present invention will be described below with reference to Figs. A DC voltage of 50 to 1500 V is applied to the gate 230 of the gate plate to induce electron emission from the film field emitter 13 of the cathode plate while applying a high voltage of more than 2 kV to the transparent electrode 32 of the cathode plate. The electrons that are emitted are accelerated by high energy. At the same time, the operation of the control means of the field emitter in each pixel of the cathode plate can be controlled by adjusting the voltage applied to the column signal line 12?s of the display and the line signal line 120D. In other words, by controlling the field emission of the field emitter 13A, the field emitter control means 14 in each pixel can represent an image. The voltage applied to the gate 230 of the gate plate at this time suppresses the electron emission of the field emitter by the anode voltage, and also prevents the region from being bent by forming a relatively uniform potential between the anode plate and the gate plate. The voltage applied to the column signal line 120S and the row signal line 120D of the display is again applied to the gate and source of the thin transistor. When a thin germanium transistor having an activation layer made of amorphous germanium is turned on and 90404-951124.doc -15-13510575 is less than 5 V or a negative voltage when the transistor is turned off, the voltage applied to the gate of the thin film transistor can be Between 5 VWOV, and further, the voltage applied to the source is in the range of 〇 to 50 V, and the applied voltage can be controlled by an external driving circuit (not shown) as described above. Next, the gray scale representation of the field emission display will be explained. A gray-scale representation of a common field emission display can be achieved using a pulse width modulation (PWM) mode, which refers to the voltage time at which the data signal applied to the field emitter can be controlled to represent gray scale. Wherein the gray level is represented by the difference in the amount of electrons emitted at a certain time. In other words, if there are more electronic quantities in a certain time, a corresponding pixel emits light having a high brightness, but the mode has a critical value, wherein The width (time) of the pulse wave per unit pixel is gradually reduced when a large-scale high-resolution screen is actually made, and it has a problem that it is difficult to accurately control the amount of electrons emitted. The driving method according to the present invention overcomes the above problems, and the gray scale representation of the field emission display can use a pulse width modulation (PWM) mode or a pulse amplitude modulation (PAM) mode, or a combination thereof. The PAM mode refers to the gray scale expressed in accordance with the amplitude difference applied to the data signal. This mode utilizes the amount of electrons that are incident on the field emitter to be varied by the voltage level difference applied to the source, which is in the state in which the thin film transistor is turned on. The gray level is represented by dividing the level into a plurality of levels. This driving method is also applicable to realizing large-scale screens and controlling quantitative electron emission. At the same time, a certain voltage is applied to the electron collector 149 to help the electrons emitted from the field emitter 130 to be well collected on the phosphor 130 of the anode plate, and to suppress the gate voltage by the anode voltage and the gate plate 23 The field of the field emitter 13 〇 90404-951124.doc -16-1310575 The emission 'in the example using the electron collecting electrode 149 as the light shielding film, the fluorescent layer of the thin film transistor 143 can be prevented from being exposed to the fluorescent light of the anode plate Object or ambient light. Further examples and improvements of the present invention will now be described in detail with reference to Figs. Fig. 6 is a cross-sectional view showing the pixel structure of a field emission display according to another example of the present invention. The structure of the cathode plate, the gate plate and the anode plate of Fig. 6 is the same as that of Fig. 5 except that the spacer layer 400 is inserted between the gate plate and the cathode plate, in other words, the surface of the gate plate without the gate 230 is attached. On the anode plate. Figure 7 is a cross-sectional view showing the pixel structure of a field emission display according to still another example of the present invention. The structure of the anode plate of Fig. 7 is the same as that of Fig. 5 except that the field emitter 13 of the cathode plate has a plurality of dots and a plurality of gate holes 22 of the gate plate so as to be in contact with the field emitter 13 0 of the cathode plate. The number is the same. An advantage of this configuration is that an electrode can be applied with a high voltage to the anode plate, and it can prevent the anode electric field from adversely affecting the field emitter via a plurality of points. Fig. 8 is a cross-sectional view showing the pixel structure of a field emission display according to still another example of the present invention. The structure of the cathode plate and the anode plate of FIG. 8 is the same as that of FIG. 7, except that the gate hole 220 of the gate plate has two holes: a large hole larger than the phosphor 34 of the anode plate and a field emitter 130 corresponding to the cathode plate. a small hole, a surface of the gate plate having no gate 23 turns on the anode plate, and a cathode plate formed by vacuum packaging, wherein the cathode plate and the gate plate are supported therebetween The spacers are separated by 90404-951124.doc -17-1310575. The above-described examples are merely exemplary and should not be construed as limiting the invention. The teachings of the present invention are applicable to the device. The description of the present invention is merely illustrative and does not limit the scope of the patent application. Those skilled in the art will appreciate that there are many alternatives. , improvement, and change. A modified field emission display according to the present invention includes: a cathode plate, a gate plate, an anode plate, and a gate hole of the gate plate having an inclined inner wall, and a gate hole having a sloped inner wall can make the field emitter The emitted electrons are focused on the phosphor of the anode, with the result that high resolution can be produced without additional focusing grid. Another improved field emission display according to the present invention includes a cathode plate and an anode plate, and an insulating layer can be formed on each upper portion of the cathode plates of FIGS. 5 to 8, wherein the field emitter, the control device, etc. can be provided without an additional gate. Formed under the plates, the insulating layer includes a gate hole having a slanted inner wall, and a gate is formed around the gate hole. Various materials (not particularly limited) may be used to form an insulating layer, such as an insulating layer formed in a thickness range of 0.01 mm to 2 mm, whereby an inclined inner wall in a gate hole of the insulating layer may be formed, and a plurality of insulating layers are formed There are different etching ratios, followed by etching by wet etching, or a green plate (formed by different deposition ratios of the stacked insulators) by the lamination method to the cathode plate' and then annealing and rice engraved. Therefore, it is not necessary to have an additional gate plate, so that the process of connecting the gate plate to the cathode plate can be omitted, thereby reducing the production cost. On the other hand, 'the field transmitter according to other variations is constructed by a point 90404-951124.doc !310575. The field emitter includes a replica point and a field emitter corresponding to the cathode plate. The number of gates. The field emission display according to the present invention as described above includes an anode plate 'cathode plate and a gate plate made of glass. The cathode plate includes signal line discrimination column/row addressing, and the column/row signal line defines each pixel, wherein each pixel has a film-like field emitter and a field emitter control device, and further, by inputting and driving the display The scanning and data signals to the control devices of each pixel can significantly reduce the column/row driving voltage of the display, so an inexpensive low-voltage driving circuit can be used instead of the high-voltage driving circuit (it is a column/row of the conventional field emission display) Required for the driver). Also in accordance with the present invention, since an electric field can be applied through the gate of the interpole plate for % emission, the distance between the anode plate and the cathode plate can be freely controlled, and thus a high voltage can be applied to the anode. Therefore, an advantage of the present invention is that it can greatly increase the brightness of the field emission display, and in addition, the voltage applied to the closed pole of the idle plate can suppress the emission of electrons from the field emitter due to the application of the anode voltage, and by the anode plate and the gate. A uniform potential is formed between the plates to prevent the regions from being bent, so that the life of the field emission display can be greatly increased. In addition, since the gate plate and the cathode plate can be separately manufactured and then assembled, the process is performed in a private manner and is destroyed by substantially removing the gate insulating film of the field emitter, thereby providing the present invention to substantially increase the field emission display. Yield and yield. In addition, the gate hole having the inclined inner wall allows the electrons emitted from the field emitter to be focused on the phosphor of the anode, with the result that two resolutions can be produced without an additional focus grid. 90404-951124.doc -19- 1310575 The present invention has been described with specific examples, but the examples are not intended to limit the invention. The invention is defined only by the time of the full-time definition, and those skilled in the art can understand that it is possible to Examples of changes or improvements in the scope and spirit of the invention. BRIEF DESCRIPTION OF THE DRAWINGS The above and other objects, features and advantages of the present invention will become more fully apparent from A conventional field emission display structure of a field emitter, FIG. 2 is a perspective view illustrating a conventional active matrix field emission display structure having a three-pole field emitter, and FIG. 3 is a perspective view illustrating the active gate with a gate according to the present invention. Matrix field emission display structure, FIG. 4 is a perspective view schematically illustrating a cathode plate, a gate plate and an anode plate in a field emission display according to the present invention, and FIG. 5 is a cross-sectional view illustrating a pixel structure of a field emission display according to an example of the present invention. 6 is a cross-sectional view illustrating a pixel structure of a field emission display according to another example of the present invention, and FIG. 7 is a cross-sectional view illustrating a pixel structure of a field emission display according to still another example of the present invention, and a cross-sectional view of FIG. A pixel structure of a field emission display of still another example is invented. [Description of Symbols] 90404-951124.doc -20· 1310575 10B Lower Glass Substrate 10T Upper Glass Substrate 11 Cathode 12, 22, 130 Field Emitter 13, 24 Anode 14, 25, 330, 340 Glory 15 , 26 400 spacer layer 20B, 20T glass substrate 21S scanning signal line 21D data signal line 23, 140 control device 100 cathode plate 110, 210, 310 substrate 120D row signal line 120S column signal line 141, 230 gate 142 gate insulating film 143 Activation layer 144, 145 metal 146 source 147 drain 148 interlayer insulating film 149 electron collector 200 gate plate 90404-951124.doc -21 - 1310575 220 gate hole 300 anode plate 320 transparent electrode 340 black matrix 90404-951124 .doc -22-