1308985 1397〇twf. doc/c 九、發明說明： 【發明所屬之技術領域】 本發明是有關於-種畫素結構及其製 別是有關於一種共平面轉換液晶顯板夸甚特 製作方法。 攸之畫素結構及其 【先前技術】 11¾著多媒體技術的高度發展，^ 傳遞大多已由類比轉為數位傳輸，而：= 象：訊的 生活模式，視訊或影像裝置之體積也如名σ現代 傳統的陰極射線管（Cathc)deRayTubfmi: ，於其内部電子腔的結構，使得顯示=符= 匕以及低消耗功率的需求，：使用：: ”與半導體製造技術之成熟，平面顯示㊁ (Flat Panel Dlsplay)便蓬勃發展起來，其 顯〒器（Liquid Crystal Display，LCD)基^其低^ 壓操作、無輻射線散射、重量輕以及體積小等優點，' 更逐漸取代傳統的陰極射線管顯示器而成為近 顯示器產品之主流。 西然^，液晶顯示器目前仍存在視角範圍狹窄與 4貝格偏尚等問題’因此如何增加其視角範圍，是目 前急需改善的課題之一。現今已有許多廣視角液晶 顯示器方案被提出，其包括有多域垂直配向= (Multi-domain Vertical Alignment, MVA)液晶顯示 I3〇89^〇twf,oc/c 益1共平面轉換（In-plane Switching，IPS)液晶顯 不益以及邊緣電場轉換模式（Fringe Field Switching，FFS)液晶顯示器等等。 圖1繪示為習知一種共平面轉換液晶顯示器之 晝素結構。請參照圖1，此畫素結構1〇〇包括一 膜電晶體110、多條驅動電極13〇以及多條共用電 極140。其中’驅動電極13〇以及共用電極⑽係 配，於同-玻璃基板1()2 (緣示於圖2E)上，且彼 此交互平行排列，而驅動電極13〇係電性 此外’薄膜電晶請係藉由掃： 配線H)4與賢料配線1G6進行驅動，其中當晝面資 料沿貧料配線106寫入薄膜電晶冑110日夺，驅動電 極130與共用電極140之間將產生水平方向之電場， 以驅動液晶分子沿電場方向 顯示的效果。 心』适4 Μ祝角 圖2Α〜圖2Ε所緣示為習知一種共 ;顯示器之畫素結構製程的剖面流程圖換： 圖2 Α所示，進行第—指氺罢制 m 板102上沈積一閘絕緣屏口回Β所不，於玻璃基 製程，以於閘極112上日2j並進订第二道光罩 上方之間絕緣層12 2卜·a、 歐姆接觸層118。然後，= 形成一源極歐姆接觸層…上 第四道光罩製程，简圖案化 1308985 13970twf.doc/c 接著，如圖2E所示，進行第五道光罩製程，以於保 護層124上形成交互穿插排列的驅動電極130與共 用電極140。此外，在上述晝素結構之製程後，更 可於此晝素結構100上全面性地沈積一層配向膜 150。 請同時參照圖1及圖2E，由於驅動電極130 與共用電極140有一定的厚度，因此沈積於其上的 配向膜150相較於電極兩側的區域會有一斷差產 生。如此一來，當進行配向工程時，由於配向膜15 0 之配向方向D和電極130、140的延伸方向之間具 有一夾角0，使得電極兩侧區域144可能發生液晶 配向不良的情形，造成液晶分子無法正常轉動，因 而降低了液晶顯示器的顯示品質。此外，習知的共 平面轉換液晶顯示面板之晝素結構的製程通常需進行五道 光罩製程，且在定義源極/汲極時，亦可能蝕刻到部分的 通道層，因此不僅製程時間較長，且其製程良率亦無法有 效提昇。 【發明内容】 本發明的目的就是在提供一種共平面轉換液晶顯示 面板之晝素結構，用以改善因電極兩側之高度斷差所 造成之液晶分子配向不良的情形。 本發明的另一目的是提供一種共平面轉換液晶顯示 面板之晝素結構的製作方法，其可降低所需使用之光 罩製程，以縮短製程時間，並可避免通道層在製程 中受到蝕刻，進而提供較佳之製程良率。 1308985 13970twf.doc/c 本發明提出一種共平面轉換液晶顯示面板之晝素結 構，其適於架構於一基板上，並藉由一掃描配線與—資料 配線進行驅動。晝素結構包括一薄膜電晶體、一介電層、 多條驅動電極以及多條共用電極，其中薄膜電晶體配置於 基板上，且耦接至掃描配線與資料配線，而介電層係由薄 膜電晶體内向外延伸而覆蓋於基板上。此外，驅動電極與 共用電極係嵌設(embedded)於介電層内，其中驅動電極係 編妾至4膜電晶體’且共用電極係與驅動電極交互穿插 置。 x 扠出 /丨王里尔邱偁的眾邗万沄，通用於一丑 =轉換液晶顯示面板。首先，提供-基板，其上係^ =主動元件11，且絲元件區内已形成有-閘極、覆罢 ^之-_緣層以及位㈣絕緣層上之—通道層。 二於::表層上形成一保護層’且保護層係覆蓋通道層。 二緣層，以於通道層上方的保護 曰W成源極/沒極接觸窗開口 患 =穿，置的多條驅動電極舆多條共= ‘上所述，本發明係於主動 、用电極。 閘絕緣層中形成多個條狀電極開口，並於卜的保護層與 形成交互穿插配置的多條驅動電極與多條共 1308985 13970twf.doc/c 此，本發明能減少電極兩側的高度斷差，從而減少配 向不良的情況發生。此外，本發明之晝素結構的製作方 法需歷經四道光罩製程，因此可有效降低製造成本。 為讓本發明之上述和其他目的、特徵和優點能更明 顯易懂，下文特舉較佳實施例，並配合所附圖式，作詳細 說明如下。 ' 【實施方式】 圖3繪示本發明之一種共平面轉換液晶顯示器之 畫素結構的剖面示意圖。請參照圖3，晝素結構3〇〇係 架構於-基板302上，其例如是一玻璃基板，且此晝素結 構300例如是藉由一掃描配線與一資料配線（未繪示）進 灯驅動。晝素結構300包括一薄膜電晶體31〇、一介 320、多條驅動電極33G以及多條共用電極 340，其中镇 膜電晶體係配置於基板3〇2上，並幢至掃描配線: 未綠示）。此外，介電層320例如是由薄膜電 曰曰脰3Η)内之1絕緣層322與一保護層324向外延戶 形成’其中介電層細例如具有多個條狀如324b f 驅動電極330與共用電極姻係嵌設於開口 324b内， 呈父互穿插配置。另外’驅動 亚 體310,並與共用電極3㈣徂卜工竹耦接至核電晶 田，、，“μ ^供—水平方向之驅動電埸 用& 結構綱上方之液晶 努’ :=圖3,薄膜電晶體31。之一咖二 道層314係對應於閘極犯而配置於閘二層It通 0此 1308985 13970twf.doc/c 外，保護層324係配置於通道層314上，且保護層324中 具有一源極/汲極接觸窗開口 324a，而源極/汲極316係配 置於保護層324上，並藉由源極/汲極接觸窗開口 32如連 接通道層314。在本實施例中，源極/汲極316、驅動電極 330以及共用電極34〇例如是同一圖案化線路，且此圖案 化線路例如是由一金屬材料層328與一透明導電材料層 338所構成之複合導電層，其中金屬材料層328之材質例 如是鉻(Cr)或鋁(A1)等金屬材質，而透明導電材料層现 之材質例如是銦錫氧化物(Indium Tin 〇xide, IT〇)或銦鋅 氧化物(Indium Zinc Oxide, ΙΖΟ)等。當然，在本發明之其 他實施例中，此圖案化線路亦可以是僅由金屬或透明氧化 物其中一種導電材質所構成之單一導電層。 值得一提的是，上述之薄膜電晶體31〇例如更可包 括一歐姆接觸層318’其配置於源極/汲極316與通道層314 之間，用以增加源極/汲極316與通道層314之間的導電 性。此外，共用電極34〇與基板302之間以及驅動電極wo 與基板302之間例如具有一黏著層36〇，用以增加共用電 極340、驅動電極330與基板302之間的黏著性。在一實 施例中，黏著層360與歐姆接觸層318例如可以是同一膜 層，其材質例如是摻雜非晶矽。 承上所述，本發明係使驅動電極33〇與共用電極34〇 肷^又於；I電層320中，以提供一較為平坦的表面，當在 晝素結構300上形成配向膜350時，將可減少配向膜 1308985 13970twf.doc/c 350在驅動電極330與共用電極34〇兩側可能形成的 高度斷差。如此一來，便可避免配向不良的情形， 進而提供較佳的顯示品質。1308985 1397〇twf. doc/c IX. Description of the Invention: [Technical Field of the Invention] The present invention relates to a pixel-like structure and its discrimination relating to a coplanar conversion liquid crystal display panel. The structure of the pixel and its [prior art] 113⁄4 The development of multimedia technology, ^ transmission has mostly been converted from analog to digital transmission, and: = like: the life mode of video, the size of video or video device is also known as σ Modern traditional cathode ray tube (Cathc) deRayTubfmi: The structure of the internal electron cavity, so that the display = symbol = 匕 and the low power consumption requirements: use:: "and the maturity of semiconductor manufacturing technology, flat display two (Flat Panel Dlsplay) has flourished, and its Liquid Crystal Display (LCD) has the advantages of low voltage operation, no radiation scattering, light weight and small size, and has gradually replaced the traditional cathode ray tube display. It has become the mainstream of near-display products. Xiran ^, LCD monitors still have problems such as narrow viewing angle and 4 Berg's bias. So how to increase the range of viewing angle is one of the urgently needed topics. There are many widely used today. A viewing angle liquid crystal display scheme is proposed, which includes a multi-domain vertical alignment (MVA) liquid crystal display I3〇89^〇t Wf, oc/c benefits 1 In-plane Switching (IPS) liquid crystal display and Fringe Field Switching (FFS) liquid crystal display, etc. Figure 1 shows a common coplanar conversion The pixel structure of the liquid crystal display. Referring to Fig. 1, the pixel structure 1 includes a film transistor 110, a plurality of driving electrodes 13A, and a plurality of common electrodes 140. The 'driving electrode 13' and the common electrode (10) are The same as the glass substrate 1 () 2 (the edge shown in Figure 2E), and arranged in parallel with each other, and the driving electrode 13 is electrically connected, and the thin film is crystallized by the sweep: wiring H) 4 The material wiring 1G6 is driven, wherein when the surface data is written into the thin film transistor 100 along the poor wiring 106, a horizontal electric field is generated between the driving electrode 130 and the common electrode 140 to drive the liquid crystal molecules along the electric field direction. The effect of the display. The heart is suitable for 4 Μ Μ 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图A gate insulating screen is deposited on the m board 102 No, in the glass-based process, the gate 112 is placed on the gate 112 for 2j and the insulating layer 12b·a, the ohmic contact layer 118 is placed over the second mask. Then, = a source ohmic contact layer is formed. The fourth mask process, simple patterning 1308985 13970twf.doc/c Next, as shown in FIG. 2E, a fifth mask process is performed to form the driving electrodes 130 and the common electrode 140 which are alternately interposed in the protective layer 124. In addition, after the process of the above-described halogen structure, a layer of alignment film 150 may be deposited on the elemental structure 100 in a comprehensive manner. Referring to FIG. 1 and FIG. 2E simultaneously, since the driving electrode 130 and the common electrode 140 have a certain thickness, the alignment film 150 deposited thereon may be generated by a gap difference from the regions on both sides of the electrode. In this way, when the alignment process is performed, since the alignment direction D of the alignment film 150 and the extending direction of the electrodes 130 and 140 have an angle of 0, the liquid crystal alignment may occur in the region 144 on both sides of the electrode, resulting in liquid crystal. The molecules cannot rotate normally, thus reducing the display quality of the liquid crystal display. In addition, the process of the conventional germanium structure of the coplanar conversion liquid crystal display panel usually requires five mask processes, and when the source/drain is defined, part of the channel layer may be etched, so that the process time is not long. And its process yield cannot be effectively improved. SUMMARY OF THE INVENTION An object of the present invention is to provide a pixel structure of a coplanar conversion liquid crystal display panel for improving the misalignment of liquid crystal molecules caused by height deviations on both sides of the electrodes. Another object of the present invention is to provide a method for fabricating a pixel structure of a coplanar conversion liquid crystal display panel, which can reduce the mask process required to shorten the process time and prevent the channel layer from being etched during the process. In turn, a better process yield is provided. 1308985 13970twf.doc/c The present invention proposes a pixel structure for a coplanar conversion liquid crystal display panel, which is suitable for being mounted on a substrate and driven by a scan wiring and a data wiring. The halogen structure includes a thin film transistor, a dielectric layer, a plurality of driving electrodes, and a plurality of common electrodes, wherein the thin film transistor is disposed on the substrate and coupled to the scan wiring and the data wiring, and the dielectric layer is formed by the thin film The transistor extends outwardly to cover the substrate. In addition, the drive electrodes and the common electrode are embedded in the dielectric layer, wherein the drive electrodes are braided to 4 membrane transistors and the common electrode system is interspersed with the drive electrodes. x fork out / 丨王里尔邱偁's 邗 沄 , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , First, a substrate is provided, on which the active component 11 is mounted, and a channel layer is formed in the region of the wire component, the gate layer, the overlying layer, and the (four) insulating layer. Second:: a protective layer is formed on the surface layer and the protective layer covers the channel layer. The two-edge layer is used for the protection of the channel layer, the source/pole contact window opening, the wearing, the plurality of driving electrodes, and the plurality of driving electrodes. pole. A plurality of strip electrode openings are formed in the gate insulating layer, and the protective layer of the pad and the plurality of driving electrodes and the plurality of strips forming the interpenetrating arrangement are 1308985 13970 twf.doc/c. The invention can reduce the height of the electrodes on both sides. Poor, thus reducing the occurrence of poor alignment. In addition, the method for fabricating the halogen structure of the present invention requires four reticle processes, thereby effectively reducing manufacturing costs. The above and other objects, features, and advantages of the present invention will become more apparent from the description of the appended claims appended claims [Embodiment] FIG. 3 is a cross-sectional view showing a pixel structure of a coplanar conversion liquid crystal display of the present invention. Referring to FIG. 3, the halogen structure 3 is mounted on the substrate 302, which is, for example, a glass substrate, and the halogen structure 300 is, for example, printed by a scanning wire and a data wiring (not shown). drive. The halogen structure 300 includes a thin film transistor 31, a dielectric 320, a plurality of driving electrodes 33G, and a plurality of common electrodes 340, wherein the film-forming electro-crystal system is disposed on the substrate 3〇2 and is connected to the scan wiring: ). In addition, the dielectric layer 320 is formed, for example, by an insulating layer 322 and a protective layer 324 in the thin film capacitor 324, wherein the dielectric layer is thin, for example, having a plurality of strips such as 324b f driving electrodes 330 and The common electrode marriage system is embedded in the opening 324b, and is arranged in a mutual interpenetration configuration. In addition, 'the sub-body 310 is driven and coupled to the nuclear electrode crystal field with the common electrode 3 (4) 徂Bugongzhu,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, The thin film transistor 31. One of the two layers of the 314 is corresponding to the gate and is disposed on the second layer of the gate. It is 03081 13970twf.doc/c, and the protective layer 324 is disposed on the channel layer 314, and is protected. The layer 324 has a source/drain contact opening 324a, and the source/drain 316 is disposed on the protective layer 324 and is connected to the channel layer 314 by a source/drain contact opening 32. In the embodiment, the source/drain 316, the driving electrode 330, and the common electrode 34 are, for example, the same patterned circuit, and the patterned circuit is, for example, a composite of a metal material layer 328 and a transparent conductive material layer 338. The conductive layer, wherein the material of the metal material layer 328 is, for example, a metal such as chromium (Cr) or aluminum (A1), and the material of the transparent conductive material is, for example, indium tin oxide (ITO) or indium. Zinc oxide (Indium Zinc Oxide, ΙΖΟ), etc. Of course, in the present invention In other embodiments, the patterned circuit may also be a single conductive layer composed of only one of a conductive material of a metal or a transparent oxide. It is worth mentioning that the above-mentioned thin film transistor 31 may include, for example, an ohmic contact. Layer 318' is disposed between source/drain 316 and channel layer 314 for increasing conductivity between source/drain 316 and channel layer 314. Further, between common electrode 34A and substrate 302, For example, the driving electrode wo and the substrate 302 have an adhesive layer 36 用以 for increasing the adhesion between the common electrode 340 and the driving electrode 330 and the substrate 302. In an embodiment, the adhesive layer 360 and the ohmic contact layer 318 are, for example. The material may be the same film layer, and the material thereof is, for example, doped amorphous germanium. According to the above description, the driving electrode 33〇 and the common electrode 34 are further disposed in the I electrical layer 320 to provide a relatively flat film. The surface, when the alignment film 350 is formed on the halogen structure 300, can reduce the height difference that the alignment film 1308985 13970twf.doc/c 350 may form on both sides of the driving electrode 330 and the common electrode 34. Thus, Avoid alignment Poor conditions, in turn, provide better display quality.
為了詳細說明本發明之特徵，下文係提出上述 之晝素結構的一種製作方法加以說明。請參考圖4A 〜4D ’其依序繪示本發明之晝素結構的製程剖面流 程圖。In order to explain the features of the present invention in detail, a method of manufacturing the above-described halogen structure is described below. Referring to Figures 4A to 4D', a process cross-sectional flow diagram of the halogen structure of the present invention is sequentially illustrated.
首先’如圖4A所示，提供一基板302，其中基板302 上係劃分有一主動元件區304及一電極區306。之後，在 基板302上沈積一金屬層（未繪示），其材質例如是鉻(Cr)， 並藉由第一道光罩製程來圖案化此金屬層，以於主動元件 區304内形成閘極312。 接著，如圖4B所示，於基板302上形成一閘絕緣層 322，其係覆蓋閘極312，而此閘絕緣層322的材質例如 是氧化矽(SiO)或氮化矽(SiN)等其他絕緣材料。之後，於First, as shown in FIG. 4A, a substrate 302 is provided, wherein the substrate 302 is divided into an active device region 304 and an electrode region 306. Thereafter, a metal layer (not shown) is deposited on the substrate 302, and the material thereof is, for example, chromium (Cr), and the metal layer is patterned by the first mask process to form a gate in the active device region 304. Pole 312. Next, as shown in FIG. 4B, a gate insulating layer 322 is formed on the substrate 302, which covers the gate 312, and the gate insulating layer 322 is made of, for example, yttrium oxide (SiO) or tantalum nitride (SiN). Insulation Materials. After that,
閘絕緣層322上形成一非晶矽(&_別)材料層（未繪示），並藉 由第一道光罩製程來圖案化此非晶石夕材料層，以形成通道 層 314。 然後，如圖4C所示，於閘絕緣層322上形成一保護 層32二’其係覆蓋通道層314，且此保護層324的材質例 如為氮化⑦(SiN)。接著，進行第三道鮮製程，以於通 道層3丨4上方的保護層324中形成源極/汲極接觸窗開口 324a，並且於電極區306内之保護層324與閘絕緣層 11An amorphous germanium (&) material layer (not shown) is formed on the gate insulating layer 322, and the amorphous layer is patterned by a first mask process to form a channel layer 314. Then, as shown in Fig. 4C, a protective layer 32 is formed on the gate insulating layer 322 to cover the channel layer 314, and the material of the protective layer 324 is, for example, nitride 7 (SiN). Next, a third fresh process is performed to form a source/drain contact opening 324a in the protective layer 324 above the channel layer 3?4, and a protective layer 324 and a gate insulating layer 11 in the electrode region 306.
I308HC/C 中形成多個條狀電極開口 324b。 非曰矽層遍圖4D所不，於基板302上依序形成一播雜 非曰曰石夕層368、-金屬材料層328以及—透明導電材❹ 338 ’並且進行第四道光罩製程，其中藉由摻雜非晶石夕^ 368可於源極/汲極接觸窗開口魏内與條狀電極開: 324b内分別形成歐姆接觸層318與黏著層36〇。此外，藉 由金屬材料層328與透明導電材料層338則可形成源極曰/A plurality of strip electrode openings 324b are formed in the I308HC/C. The non-layered layer is not formed in FIG. 4D, and a non-coffin layer 368, a metal material layer 328, and a transparent conductive material 338 338 ' are sequentially formed on the substrate 302, and a fourth mask process is performed, wherein The doped amorphous stone 368 can be formed in the source/drain contact window opening and the strip electrode: ohmic contact layer 318 and adhesive layer 36 分别 are formed in 324b, respectively. In addition, the source 曰/ can be formed by the metal material layer 328 and the transparent conductive material layer 338.
汲極316，並且同時於條狀電極開口 324b内形成交互穿 插配置的驅動電極330與共用電極340。The drain electrode 316 and the drive electrode 330 and the common electrode 340 of the interleaved arrangement are formed simultaneously in the strip electrode opening 324b.
本發明之畫素結構的製作方法僅使用四道光罩製 私，因此可具有較佳之製程效率與較低的製作成本。 此外’當進行第四道光罩製程（如圖4D所示）以形成 源極/汲極316時，通道層314可受到上方之保護層324 的保護，因此可避免通道層314受到蝕刻。值得一提的是， 在製作驅動電極330與共用電極340時，.本發明亦可選擇 性地僅形成金屬材料層328或透明導電材料層338其中之 一，且更可調整其他膜層（例如保護層324或閘絕緣層322) 與此金屬材料層328或透明導電材料層338之間的製程參 數，以求得最佳化的尺寸(例如厚度)搭配，進而提供較為 平坦之表面。 綜上所述，本發明之共平面轉換液晶顯示面板的晝 素結構及其製作方法至少具有下列特徵與優點： (1)驅動電極與共用電極係嵌設於介電層中，因此可 12 'twf.doc/c 有效減少配向膜 度’從而減少阶二 極兩側的區域產生的斷差高 (2) 僅需二四的情況發生。 作成本，並提高生、光罩製程，因此可有效節省製 (3) 可有效確保 '率— 率，且因通道屑 & 曰之完整，以提供較佳之製程良 或光漏電流，‘而可相對縮減，更有助於降低漏電流 雖然本發明素結構之整體t性表現。 以限定本發明^實施綱⑸上，然其並非用 神和範_，當可 ^ $脫離本發明之精 護範圍當視—+更動與，_，因此本發明之仅 申請專利範圍所界定者^。保 ^ 、曰示為習知一種共平面間轉拖> 之晝素結構。 轉換液晶顯示器 圖严〜圖2£所料為習知 液曰曰顯示器之晝素結構製程的剖：干面間轉換 圖3繪示本發明之王… 晝素結構的剖面示意圖。十轉钱液晶顯示器之 圖4A〜圖4D ’其依序繪示本發 製程剖面流程圖。 <i素結構的 【主要元件符號說明】 1〇〇:晝素結構 W2:玻璃基板 104 :掃瞄配線 13 1308985 13970twf.doc/c 106 :資料配線 110 :薄膜電晶體 112 :閘極 114 :通道層 116 :源極/汲極 118 :歐姆接觸層 122 :閘絕緣層 124 :保護層 130 :驅動電極 140 :共用電極 144 :電極兩側區域 150 :配向膜 D :配向方向 0 :夾角 300 :畫素結構 302 :基板 304 :主動元件區 306 .電極區 310 :薄膜電晶體 312 :閘極 314 :通道層 316 :源極/汲極 318 :歐姆接觸層 1308985 13970twf.doc/c 320 :介電層 322 :閘絕緣層 324 :保護層 324a :源極/汲極接觸窗開口 324b :條狀電極開口 328 金屬材料層 330 驅動電極 338 透明導電材料層 340 共用電極 350 配向膜 360 黏著層 368 摻雜非晶矽層 15The fabrication method of the pixel structure of the present invention is only made by using four masks, so that it has better process efficiency and lower fabrication cost. In addition, when a fourth mask process (shown in Figure 4D) is performed to form the source/drain 316, the channel layer 314 can be protected by the upper protective layer 324, thereby preventing the channel layer 314 from being etched. It should be noted that, in the fabrication of the driving electrode 330 and the common electrode 340, the present invention may also selectively form only one of the metal material layer 328 or the transparent conductive material layer 338, and may further adjust other film layers (for example, The process parameters between the protective layer 324 or the gate insulating layer 322) and the metal material layer 328 or the transparent conductive material layer 338 are matched to an optimized size (e.g., thickness) to provide a relatively flat surface. In summary, the pixel structure of the coplanar conversion liquid crystal display panel of the present invention and the manufacturing method thereof have at least the following features and advantages: (1) the driving electrode and the common electrode system are embedded in the dielectric layer, so 12' Twf.doc/c effectively reduces the alignment film' to reduce the high gaps produced by the areas on both sides of the second pole (2) only need two or four. Cost and improve the raw and reticle process, so it can effectively save the system (3) can effectively ensure the 'rate-rate, and because of the integrity of the channel chip & , to provide better process or light leakage current,' It can be relatively reduced, and is more conducive to reducing leakage current despite the overall t-performance of the prime structure of the present invention. In order to limit the present invention to the implementation of (5), it is not intended to be used in the scope of the invention, and the scope of the invention is defined by the scope of the patent application only. . The ^ and 曰 are shown as a common morphological structure of coplanar transfer. Switching to the liquid crystal display Figure VII ~ Figure 2 is expected to be a conventional liquid crystal display of the structure of the structure of the liquid crystal structure: dry surface conversion Figure 3 shows the king of the present invention... Fig. 4A to Fig. 4D' of the ten-turn money liquid crystal display sequentially show the flow chart of the process. <Description of main components and symbols; 1〇〇: halogen structure W2: glass substrate 104: scan wiring 13 1308985 13970twf.doc/c 106: data wiring 110: thin film transistor 112: gate 114: Channel layer 116: source/drain 118: ohmic contact layer 122: gate insulating layer 124: protective layer 130: driving electrode 140: common electrode 144: electrode side region 150: alignment film D: alignment direction 0: angle 300: Pixel structure 302: substrate 304: active device region 306. Electrode region 310: thin film transistor 312: gate 314: channel layer 316: source/drain 318: ohmic contact layer 1308985 13970twf.doc/c 320: dielectric Layer 322: gate insulating layer 324: protective layer 324a: source/drain contact window opening 324b: strip electrode opening 328 metal material layer 330 driving electrode 338 transparent conductive material layer 340 common electrode 350 alignment film 360 adhesive layer 368 doping Amorphous germanium layer 15