TWI307218B - Low emi output driving circuit and method - Google Patents
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1307218 九、發明說明: 【發明所屬之技術領域】 本發明係關於—種輸出驅動電路 種低電磁干擾之輪出驅動電路及方法。特別疋關於— 【先前技術】 習用積體電路晶片’例如-標準積體電路晶片(re ic)或一功率積體電路日 gular 動電路為了達到足夠大之電流驅動能 輸出: (push-pull)之方式,r m〜. 祝式 ^即利用數級CM〇s架構之 成一輸出驅動電路,如第丨 、、串接 ηΛ 圖所不,其最後—級之緩衝铋 以一 PM〇S電晶體Ml串接一 Ν则電晶體Μ2後並配置 及—接地節點GND之間,該電晶心 m2之串接處連接至_輸出墊8G(_put㈣,該電晶體μ 及Μ〗之閘極連接至一和在丨丨1味c 认 1 s. 端。#該控制訊號 sin為同电壓準位(Vdd)時,該電晶體%呈導通狀態而該電 晶體呈不導通狀態,此時該輸出$ 8〇之電壓準位為〇丨 而當該控制訊號Sin為低電壓準位⑼時,該電晶體%呈不 導通狀態而該電晶體Ml呈導通狀態,此時該輸出墊 電壓準位為VDD。 在實際使用上’該緩衝級9〇為了驅動一輸出負载,尤 其當該輸出負載為電阻性負載(resistive ―幻或大電容 性負載(large capacitive 1〇ading)時,該電晶體%及^^之 寬長比(W/L ratio)會非常大,藉以增大驅動能力。然而,1307218 IX. Description of the Invention: [Technical Field] The present invention relates to a drive circuit and method for low-electromagnetic interference of an output drive circuit. In particular, [Prior Art] Conventional integrated circuit chip 'for example, a standard integrated circuit chip (reic) or a power integrated circuit, a gular moving circuit, in order to achieve a sufficiently large current drive energy output: (push-pull) The way, rm~. I wish to use ^ 利用 架构 架构 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 ^ ^ ^ ^ ^ ^ After the transistor Μ2 is connected in series, and between the grounding node GND, the series connection of the electro-crystal core m2 is connected to the _ output pad 8G (_put (4), and the gate of the transistor μ and Μ is connected to one And when the control signal sin is at the same voltage level (Vdd), the transistor is in a conducting state and the transistor is in a non-conducting state, at which time the output is $8. When the control signal Sin is at a low voltage level (9), the transistor % is in a non-conducting state and the transistor M1 is in an on state. At this time, the output pad voltage level is VDD. In actual use, the buffer stage 9〇 is used to drive an output load, especially when the input When the load is a resistive load (resistive or large capacitive 1〇ading), the width and length ratio (W/L ratio) of the transistor % and ^^ will be very large, thereby increasing the driving capability. however,
01139-TW / HD-2005-0014-TW 5 1307218 當該緩衝級90在轉態時,例如高準位到低準位(1到〇)或 低準位到南準位(〇到1 ),該電晶體及m2會一瞬間同時 導通而產生一轉態電流(transient current)自該電壓源Vdd 流至該接地節點GNd,而使得消耗電力提高。此外,於轉 態時該電晶體上會產生由該電源端Vdd流至該輸出墊 8〇之一瞬間驅動電流;該電晶體M2上會產生一由該輸出 墊80流至該接地節點GND之一瞬間驅動電流,其會產生 明顯之電磁干擾(Electric Magnetic Interference, emi)問 題。 習知用以解決由該電壓源Vdd流至該接地節點gnd之 轉態i流以節省消耗電力之方式,會於該最後一級缓衝級 9〇之前端加入一非重疊緩衝區7〇(n〇n_〇veriap buffe〇,如 第2a圖所示,該非重疊緩衝區7〇可使得分別控制該電晶 體吣及Μ,之控制訊號在時間軸上偏移一微小量,如第几 圖所不,一控制訊號GPA用以控制該電晶體Μ!之導通及 不導通,另一控制訊號GNA用以控制該電晶體Μ〗之導通 及不導通,該非重疊緩衝區7〇可使得該控制訊號GPA及 GNA在不同時間點觸發該電晶體⑷及% ’亦即使得該控 制訊號GPA及GNA之間具有一相位延遲⑽咖細叻^ 如此可使得該電晶體%及⑷於不同時間導通,因 除於轉態時自該電壓源Vdd流至該接地節點Gnd之瞬間驅 動電流。然而’僅加入該非重疊緩衝區70並無法消除該; 晶體吣及M2上之瞬間驅動電流,因而仍然無法解決電磁 驅 基於上述原因,其確實仍有必要進一步改良上述輸出01139-TW / HD-2005-0014-TW 5 1307218 When the buffer stage 90 is in the transition state, for example, the high level to the low level (1 to 〇) or the low level to the south level (〇 to 1), The transistor and m2 are simultaneously turned on at the same time to generate a transient current flowing from the voltage source Vdd to the ground node GNd, so that the power consumption is increased. In addition, during the transition state, a transient driving current from the power supply terminal Vdd to the output pad 8〇 is generated on the transistor; a current flowing from the output pad 80 to the ground node GND is generated on the transistor M2. Driving the current for a moment, it will produce a significant electromagnetic interference (emi) problem. Conventionally, in order to solve the problem that the voltage source Vdd flows to the grounded node gnd to save power, a non-overlapping buffer is added to the front end of the last stage buffer stage 9〇. 〇n_〇veriap buffe〇, as shown in Fig. 2a, the non-overlapping buffer 7〇 can control the transistor Μ and Μ respectively, and the control signal is shifted by a small amount on the time axis, as shown in the figure No, a control signal GPA is used to control the conduction and non-conduction of the transistor, and another control signal GNA is used to control the conduction and non-conduction of the transistor, and the non-overlapping buffer 7 can make the control signal The GPA and the GNA trigger the transistor (4) and %' at different time points, that is, the phase delay (10) between the control signals GPA and GNA is such that the transistors % and (4) are turned on at different times. Except during the transition state, the current is driven from the voltage source Vdd to the ground node Gnd. However, 'only adding the non-overlapping buffer 70 can not eliminate this; the crystal 吣 and the instantaneous driving current on M2, and thus still cannot solve the electromagnetic Drive based on the above Reason, it is still necessary to further improve the above output
01139-TW / HD-2005-0014*TW 6 1307218 =:問:能同時達成消除—轉態電流及電磁 【發明内容】 路及本方發套明之其二的在提供一種低電磁干擾之輪出驅動電 緩衝級以“糸精由將最後—級之緩衝級使用-多相延遲 、、衝、及以產生相位不同之輪 間驅動電流峰值之功效。 " ,明具有降低瞬 路及本 = 明另^目的在提供一種低電磁干擾之輸出驅動電 緩衝級以以係猎由將最後—級之緩衝級使用—多相延遲 產生相位不同之輪出訊號,俾以降低電磁干擾之 '為達上述目的,本發明之^ “ 之低電磁干擾之輸出驅動電路, 八王要包含複數個緩衝級,該箄01139-TW / HD-2005-0014*TW 6 1307218 =: Q: Can achieve elimination at the same time - transition current and electromagnetic [invention content] The road and the other side of the package are providing a low electromagnetic interference round The drive buffer stage is used to "use the final-stage buffer stage - multi-phase delay, rush, and to produce peak-to-peak drive current peaks with different phases. ", with reduced transients and this = It is also intended to provide a low-electromagnetic interference output-driven electrical buffer stage for hunting by using the final-stage buffer stage--multiphase delay to generate a phase-in different signal, to reduce electromagnetic interference. The above object, the low electromagnetic interference output driving circuit of the present invention, the eight kings should include a plurality of buffer stages, the
%寺級衝級之母—級由一 PMOS 電日日體及一 NMOS電晶體所組成,哕 MMnc ^ 丨风°亥PM〇S電晶體串接該 NMOS電晶體後並配置於— %么你及電壓節點之間,該 兩電晶體之串接處連接至下—铋螇徐妨> 笪 ^ ,、及綾衝,,及之閘極連接處,該 十 罘讯唬,亚於最後一級輸出一 :-讯號’·及一多相延遲緩衝級包含一輪入端及一輸出 立而’該輪入端接收該第二訊號计 ^札現亚由该輸出端輸出一第三訊 ,,該多相延遲緩衝級做為該輪出驅動電路之最後一級輸 級’其中該第三訊號包括由該多相延遲緩衝級產生之複 數組相位不同之輸出訊號’以降低該第三訊號之尖峰值。 本發明另提供-種低電磁干擾之輸出驅動方法,包含下 列步驟:輸入-第-輸入訊號至複數個緩衝級之第一級,The mother-level of the %-level grading stage consists of a PMOS electric Japanese body and an NMOS transistor. 哕MMnc ^ 丨风°海 PM〇S transistor is connected in series with the NMOS transistor and configured in -% Between the voltage nodes, the series connection of the two transistors is connected to the lower - 铋螇 铋螇 & , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , Output one: - signal '· and a multi-phase delay buffer stage includes a round-in end and an output stand and 'the wheel-in terminal receives the second signal meter ^ 现 亚 由 由 由 由 由 由 由 由 由 由 由 由 由 由 由 由The multi-phase delay buffer stage is used as the last stage of the turn-off drive circuit. The third signal includes an output signal of a complex array phase generated by the multi-phase delay buffer stage to reduce the peak of the third signal. value. The present invention further provides an output driving method for low electromagnetic interference, comprising the following steps: input-first-input signal to the first level of a plurality of buffer stages,
01139-TW / HD-2005-0014-TW 7 130721801139-TW / HD-2005-0014-TW 7 1307218
該等緩衝級之每一級由一 PMOS電晶體及一 NM0S電晶體 所組成,該PMOS電晶體串接該NM〇s電晶體後並配置於 一電壓源及一電壓節點之間,該兩電晶體之串接處連接至 下一級緩衝級之閉極連接處,並於最後一級輸出一第二訊 號;及提供一多相延遲緩衝級包含一輸入端及一輸出端, 。亥輸入端接收s亥第二訊號並由該輸出端輸出一第三訊號, p亥夕相延遲緩衝級做為該輸出驅動電路之最後一級輸出 ,、及,其中該第二訊號包括由該多相延遲緩衝級產生之複數 』相位不同之輸出訊號,以降低該第三訊號之尖峰值。 【實施方式】 為了讓本發明之上述和其 顯,下文特舉本發明實施例 明如下。 他目的、特徵、和優點能更明 ’並配合所附圖示,作詳細說 3月參照第3 a及3 b圖所干,甘4巨_丄拉 低電磁干擾之輸出驅動方丁 ::較乜貫施例之 9。,、-非重疊緩衝區7。及:其包含複數個緩衝級 組成-輪出驅動電路延遲緩衝級u,其共同 積體電路晶片〔未給—Ί 輸出驅動電路10接收來自- χ^ ^ 曰不,例如一標準積體電路晶#1 功率積體電路晶片,之 曰曰片或一 流至-輸出墊80。該二:號並產生—輪出驅動電 阻性負载或大電容性負裁出驅動電路1〇較佳用以驅動-電 s亥等緩衝級9〇,以— 晶體%後並配置於—電晶體%串接—咖s電 間’該等電晶體=、及一電壓節點GND,之 串接處連接至下—級緩衝級之 01139-TW/^-2〇〇5-〇〇,4,rw 1307218 , 電晶體%及M2之閘極連接處;該等緩衝級90,之第—級 接收一積體電路晶片之驅動訊號後〔未標示〕,由最後一 級輸出該多相延遲緩衝級丨i之控制訊號gpb及GNB。該 非重疊緩衝區70(non-overlaP buffer)串接於該輸出驅動電 路10之該等緩衝級90,之最後一級之兩電晶體之串接處以 及該多相延遲緩衝級n之輸入端之間,其可使驅動該多相 延遲缓衝級11之控制訊號GPB及GNB之間存在一相位延 遲〔第3b圖之τ,〕,以使得該多相延遲緩衝級u之pM〇s • 及NMOS不會同時導通,藉以消除自該電壓源VDD流至 3玄電壓節點GND,之轉態電流(transient current),以降低損 耗之功率。其中,非重疊緩衝區7 〇係可省略,而將緩衝級 90’最後一級之輸出端直接連接至多相延遲緩衝級丨丨之輸 1入端。 請再參照第3a圖所示,本發明較佳實施例之多相延遲 缓衝級11其為該輸出驅動電路i 〇之最後一級之緩衝級, 其係將最後一級輸出級分割為n份,但其整體仍具有相同 ►之見長比(W/L ratio) ’以維持相同之驅動能力,其包含複 數個PMOS電晶體p,、p2至Pn、複數個nm〇s電晶體&、 N2至Nn、一 PMOS多相延遲線j!及一 NM〇s多相延遲 線 112 (multi phase delay line)。該多相延遲線 U1 及 U2 可依產品需求選擇為一電流控制延遲線(Current c〇ntr〇1Each of the buffer stages is composed of a PMOS transistor and an NM0S transistor. The PMOS transistor is connected in series with the NM〇s transistor and disposed between a voltage source and a voltage node. The series connection is connected to the closed-end connection of the next-stage buffer stage, and outputs a second signal at the last stage; and provides a multi-phase delay buffer stage including an input end and an output end. The input end of the hai receives the second signal of the shai and outputs a third signal by the output end, and the p-phase phase delay buffer stage is used as the final output of the output drive circuit, and wherein the second signal includes more The phase delay buffer stage produces a complex number of output signals of different phases to reduce the peak value of the third signal. [Embodiment] In order to make the above and the present invention, the embodiments of the present invention are hereinafter described as follows. His purpose, characteristics, and advantages can be more clearly' and with the attached drawings, for details, refer to the 3rd and 3b drawings in March, and the output of the 4th _ 丄 low electromagnetic interference driver: More than 9 of the example. ,, - non-overlapping buffer 7. And: it comprises a plurality of buffer stages - a wheel drive circuit delay buffer stage u, and a common integrated circuit chip (not given - output drive circuit 10 receives from - χ ^ ^ 曰 not, such as a standard integrated circuit crystal #1 Power integrated circuit chip, chip or first-class to output pad 80. The second: number is generated - the wheel drive driving resistive load or the large capacitive negative cutting drive circuit 1 is preferably used to drive the buffer stage 9 〇, such as the crystal % and is disposed in the transistor % series connection - coffee s electric room 'the transistor =, and a voltage node GND, the series connection is connected to the lower-level buffer level 01139-TW/^-2〇〇5-〇〇, 4, rw 1307218, the gate junction of the transistor % and M2; the buffer stage 90, the first stage receives the driving signal of an integrated circuit chip [not labeled], and outputs the multi-phase delay buffer stage 最后i by the last stage The control signals gpb and GNB. The non-overlap buffer 70 is connected in series to the buffer stages 90 of the output driver circuit 10, between the two transistors of the last stage and the input of the multiphase delay buffer stage n. , which can cause a phase delay [τ of FIG. 3b] between the control signals GPB and GNB driving the multi-phase delay buffer stage 11 so that the polyphase delay buffer stage u is pM〇s • and NMOS It will not be turned on at the same time, so as to eliminate the transient current flowing from the voltage source VDD to the 3 sinus voltage node GND to reduce the power loss. The non-overlapping buffer 7 can be omitted, and the output of the last stage of the buffer stage 90' is directly connected to the input and output of the polyphase delay buffer stage. Referring to FIG. 3a again, the multi-phase delay buffer stage 11 of the preferred embodiment of the present invention is the buffer stage of the last stage of the output drive circuit i, which divides the last stage output stage into n parts. But the whole still has the same ►W/L ratio' to maintain the same driving capability, including a plurality of PMOS transistors p, p2 to Pn, a plurality of nm〇s transistors & N2 Up to Nn, a PMOS multiphase delay line j! and an NM〇s multiphase delay line 112. The multi-phase delay lines U1 and U2 can be selected as a current control delay line according to product requirements (Current c〇ntr〇1
Delay Line,CCDL)、一電壓控制延遲線(v〇hage contr〇I Delay Lme,VCDL)、一反向緩衝器延遲線(inverter buffei> delay line) 序列逛輯控制緩衝線(sequential logic control delay line)及其他可達成相位分割之相位延遲線, 01Ϊ 39-TW / HD-2005-0014-TW 9 1307218 且其相位分割之方式可依 』依產需求選擇為均等 即,均等相位差)或不均等分 刀口 !(亦 J寻刀剖(亦即’不均等相 採用不均等分割時較佳係採 之一# ί e a & 弟、及〔遠離该輸出墊80 ^ χ 輸出墊80之—端〕逐漸掸 大之为剎方式(亦即’以逐漸辦女夕士; & i 曰 宇斤s大之方式改變相位差、以眚 現相位分割之目的。 夂祁饥差)以貫 於本實施例中,該等PM〇s電Delay Line, CCDL), a voltage control delay line (v〇hage contr〇I Delay Lme, VCDL), an inverse buffer delay line (inverter buffei) delay line (sequential logic control delay line) And other phase delay lines that can achieve phase division, 01Ϊ 39-TW / HD-2005-0014-TW 9 1307218 and the way of phase division can be selected according to the production demand to be equal, equal phase difference) or unequal Splitting the knife edge! (Also J is looking for a knife cut (that is, one of the better ones when the unevenness is unevenly divided. #ί ea & brother, and [away from the output pad 80 ^ χ output pad 80 - end] Gradually become a brake method (that is, 'to gradually run a female eve; & i 曰 斤 s s big way to change the phase difference, to achieve the purpose of phase division. 夂祁 差 ) 以 以 以 以 以 以 以 以 以 以 以 以 以 以 以In the example, the PM〇s electricity
帝曰舰'T 电日日體、p2至pn、NMOS 电日曰體、N2至Nn、PMOS客如Μ 仏 M〇s夕相延遲線111及NMOS多 相延遲線112之連接方—、,总,、, 式係以一 PMOS電晶體串接一 NM0S電晶體〔例如p〗及n ί你、,化虫 1及乂〕後亚配置於一電壓源Vdd, 及一電Μ節點GND’之間,該等蘭s電晶體及nm〇s電 晶體之串接處連接至該輸出L該等pM〇s電晶體之間 極連接至該PM0S多相延遲線m,該等N〇Ms之閘極連 接至該NM0S乡相延遲線112,如此以使該多相延遲緩衝 級11轉態之時,達成分割該電壓源Vdd,經由該等pM〇s 電晶體?1、?2至Pn流至該輸出墊80以及由該輸出墊80 經由該等NM0S電晶體Nl、N2至Nn流至該電壓節點GND, 之瞬間驅動電流,以產生相位不同之輸出訊號藉以降低電 磁干擾之問題。The connection between the emperor's 'T-day solar body, p2 to pn, NMOS electric corona body, N2 to Nn, PMOS passengers such as 仏M〇s 相 phase delay line 111 and NMOS polyphase delay line 112—, In total, the system is connected in series with a PMOS transistor by a NM0S transistor (for example, p and n, you, worm 1 and 乂), and then arranged in a voltage source Vdd, and an electrical node GND' The series connection between the blue s transistors and the nm 〇s transistors is connected to the output L. The pM 〇s transistors are connected to the PMOS multiphase delay line m, and the gates of the N 〇 Ms are connected. The pole is connected to the NMOS phase delay line 112 such that when the multiphase delay buffer stage 11 is in a transition state, the voltage source Vdd is divided and passed through the pM〇s transistors. 1,? 2 to Pn flow to the output pad 80 and the output current from the output pad 80 to the voltage node GND via the NM0S transistors N1, N2 to Nn, to generate an output signal with different phases to reduce electromagnetic interference. problem.
請再參照第3b圖所示,其中該時脈訊號GpB i 至GPBn由該PMOS多相延遲緩衝線1丨1分割所產生,其分 別控制該輸出驅動電路1 〇内之該等pM〇s電晶體Pi、h 至Pn之導通及不導通,該時脈訊號GNBi、GNB2至GNBn 由該NMOS多相延遲緩衝線1 1 2分割所產生,其分別控制 該輸出驅動電路10内之該等NMOS電晶體N!、N2至N 01139-TW / HD-2005-0014-TW 10 1307218 • 之導通及不導通。如此,藉由該非重疊緩衝區70,可使得 該時脈序號 GPBi、GPB2 至 GPBn 與 GNB,、GNB2 至 GNBn 之間具有一相位延遲’可消除轉態電流(transient current) 以降低損耗電力;藉由該多相延遲緩衝級丨丨,可產生相位 不同之輸出訊號而降低瞬間驅動電流之峰值(peak value), 藉以降低電磁干擾之問題。 如上所示,因第1及2a圖所示之習Referring to FIG. 3b again, the clock signals GpB i to GPBn are generated by dividing the PMOS polyphase delay buffer line 1丨1, and respectively controlling the pM〇s in the output driving circuit 1 The crystals Pi, h to Pn are turned on and off, and the clock signals GNBi, GNB2 to GNBn are generated by dividing the NMOS polyphase delay buffer line 112, and respectively controlling the NMOS powers in the output driving circuit 10. Crystal N!, N2 to N 01139-TW / HD-2005-0014-TW 10 1307218 • Conduction and non-conduction. Thus, by the non-overlapping buffer 70, the clock sequence number GPBi, GPB2 to GPBn and GNB, and GNB2 to GNBn can have a phase delay 'to eliminate the transient current to reduce the power loss; From the multi-phase delay buffer stage, an output signal having a different phase can be generated to reduce the peak value of the instantaneous drive current, thereby reducing the problem of electromagnetic interference. As shown above, the habits shown in Figures 1 and 2a
有瞬間驅動電流峰值過大,如此會產生電磁干擾之問題Y 相較於第1及2a圖之習用輸出驅動電路,本發明實施例之 低電磁干擾之輸出驅動電路〔如第3&圖所示〕藉由 相延遲緩衝級η以產生相位不同之輸出訊號,其確實 間驅動電流之峰值降低’以減少電磁干擾之問題。 雖然本發明已以前述較佳實施例揭示,然其並非 明,任何熟習此技藝者,在不脫離本發 : 圍當視後附之申請專利範圍所界定者為準。 伟。蒦靶There is a problem that the peak value of the instantaneous driving current is too large, so that electromagnetic interference is generated. Compared with the conventional output driving circuit of FIGS. 1 and 2a, the output driving circuit of the low electromagnetic interference according to the embodiment of the present invention is as shown in FIG. 3 & By phase delay buffer stage η to produce output signals with different phases, the peak value of the drive current is actually reduced to reduce the problem of electromagnetic interference. Although the present invention has been disclosed in the foregoing preferred embodiments, it is not to be understood that the invention is defined by the appended claims. Wei. Target
01139-TW / HD-2005-00J4-TW 11 1307218 【圖式簡單說明】 第1圖:習用輸出驅動電路之電路圖。 第2a圖:另—習用輸出驅動電路之電路圖。 第圖第2a圖之輸出驅動電路之驅動訊號之時脈圖。 第3a圖^本發明較佳實施例之低電磁干擾之輸出驅動 電路及方法之電路圖。 第3b圖第3a圖之低電磁干擾之輸出驅動電路及方法 之驅動訊號之時脈圖。 【圖號說明】 1 〇輸出驅動電路 111 Ρ Μ Ο S多相延遲線 70非重疊緩衝區 90緩衝級 PMOS電晶體 ΡπΡη PMOS電晶體 11多相延遲緩衝級 112 NMOS多相延遲線 80輸出墊 90’緩衝級 M2 NMOS電晶體 ΝπΝη NMOS電晶體01139-TW / HD-2005-00J4-TW 11 1307218 [Simple description of the diagram] Figure 1: Circuit diagram of the conventional output driver circuit. Figure 2a: Circuit diagram of another-used output driver circuit. The clock map of the drive signal of the output drive circuit of Figure 2a of the figure. Figure 3a is a circuit diagram of an output drive circuit and method for low electromagnetic interference in accordance with a preferred embodiment of the present invention. Figure 3b is a timing diagram of the driving signal of the low electromagnetic interference output driving circuit and method. [Description of the number] 1 〇 output drive circuit 111 Ρ Ο Ο S multiphase delay line 70 non-overlapping buffer 90 buffer stage PMOS transistor ΡπΡη PMOS transistor 11 multiphase delay buffer stage 112 NMOS multiphase delay line 80 output pad 90 'Buffered M2 NMOS transistor ΝπΝη NMOS transistor
01139-TW / HD-2005-0014-TW01139-TW / HD-2005-0014-TW
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