TWI306782B - Suspension for showerhead in process chamber - Google Patents
Suspension for showerhead in process chamber Download PDFInfo
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- TWI306782B TWI306782B TW095128932A TW95128932A TWI306782B TW I306782 B TWI306782 B TW I306782B TW 095128932 A TW095128932 A TW 095128932A TW 95128932 A TW95128932 A TW 95128932A TW I306782 B TWI306782 B TW I306782B
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- Prior art keywords
- suspension
- wall
- sprinkler head
- gas
- periphery
- Prior art date
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- 239000000725 suspension Substances 0.000 title claims description 300
- 238000000034 method Methods 0.000 title claims description 153
- 230000008569 process Effects 0.000 title claims description 123
- 230000007246 mechanism Effects 0.000 claims description 105
- 238000012545 processing Methods 0.000 claims description 83
- 239000000463 material Substances 0.000 claims description 16
- 238000007789 sealing Methods 0.000 claims 5
- 238000005507 spraying Methods 0.000 claims 1
- 239000007789 gas Substances 0.000 description 145
- 230000035882 stress Effects 0.000 description 29
- 229910052782 aluminium Inorganic materials 0.000 description 16
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 16
- 238000001816 cooling Methods 0.000 description 16
- 238000005452 bending Methods 0.000 description 13
- 230000002093 peripheral effect Effects 0.000 description 10
- 239000000758 substrate Substances 0.000 description 9
- 230000008602 contraction Effects 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 6
- 238000005520 cutting process Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000004044 response Effects 0.000 description 5
- 239000007921 spray Substances 0.000 description 5
- 238000013461 design Methods 0.000 description 4
- 230000035939 shock Effects 0.000 description 4
- 230000008646 thermal stress Effects 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000112 cooling gas Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000004049 embossing Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000008266 hair spray Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 230000006903 response to temperature Effects 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
- C23C16/45591—Fixed means, e.g. wings, baffles
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Fire-Extinguishing By Fire Departments, And Fire-Extinguishing Equipment And Control Thereof (AREA)
- Drying Of Semiconductors (AREA)
Description
• 1306782 九、發明說明: 【發明所屬之技術領域】 本發明係關於用於懸吊喷灑頭之設備及方法,其中噴 灑頭係用於將氣體分配至製造平面顯示器、半導體及其他 電子元件之真空處理室。更明確而言,本發明係關於最小 化因懸置機構與喷灑頭之熱膨脹及收縮所致的應力。 【先前技術】BACKGROUND OF THE INVENTION 1. Field of the Invention This invention relates to an apparatus and method for suspending a sprinkler head for dispensing gas to the manufacture of flat panel displays, semiconductors, and other electronic components. Vacuum processing room. More specifically, the present invention relates to minimizing stress due to thermal expansion and contraction of the suspension mechanism and the showerhead. [Prior Art]
一般像平面顯示器及積體電路的電子元件通常是由一 連串製程步驟製造而成,使數種層沉積於一基材上,並使 沉積材料蝕刻為所欲圖案。製程步驟通常包括電漿增強化 學氣相沉積製程、熱化學(非電漿)氣相沉積製程以及電漿 增強蝕刻製程。 基材通常係安放於真空處理室(稱為製程處理室)内的 懸吊器(或稱為吸盤或工作件支撐件)上。化學氣相沉積及 蝕刻製程通常需要基材處於升高溫度下,使懸吊器可由某 些機制(如電阻或輻射加熱)加熱。於電漿製程中,電漿便 可供應額外熱量至基材及懸吊器。 製程氣體混合物通常會經由氣體分配板(通常稱為噴 灑頭或喷灑器,具有數百或數千個孔洞或通道穿通其中) 分配至製程處理室中。喷灑頭通常具有一平面或略具弧度 的下表面,設在鄰近基材(及懸吊器)上表面或與之平行 處,且氣體通道分佈在整個喷灑頭表面,以使分配通過喷 灑頭的製程氣體均勻地分配於基材(及懸吊器)區域上。Electronic components such as flat panel displays and integrated circuits are typically fabricated by a series of process steps that deposit several layers on a substrate and etch the deposited material into a desired pattern. The process steps typically include a plasma enhanced chemical vapor deposition process, a thermochemical (non-plasma) vapor deposition process, and a plasma enhanced etch process. The substrate is typically placed on a suspension (also referred to as a suction cup or workpiece support) in a vacuum processing chamber (referred to as a process chamber). Chemical vapor deposition and etching processes typically require the substrate to be at elevated temperatures to allow the suspension to be heated by certain mechanisms such as electrical resistance or radiant heating. In the plasma process, the plasma supplies additional heat to the substrate and suspension. The process gas mixture is typically dispensed into the process chamber via a gas distribution plate (commonly referred to as a sprinkler or sprinkler with hundreds or thousands of holes or channels through). The sprinkler head typically has a flat or slightly curved lower surface disposed adjacent or parallel to the upper surface of the substrate (and the hanger) and the gas passages are distributed throughout the surface of the sprinkler head for dispensing The process gas of the sprinkler is evenly distributed over the area of the substrate (and the hanger).
5 • 1306782 於電漿製程中,電能或電磁能量可耦合至製程氣體, 以將之激發成電漿態。電將可將氣體混合物解耦合為離子 物種,以執行所欲沉積或蝕刻製程。於電容激發之電漿處 理室中,電漿係由施加於喷灑頭(作為陽極)' 及懸吊器(作 為陰極)間的射頻電源所激發。電漿處理室中喷灑頭的範例 已揭示於1989年8月8日由Chang等人領證,共同受讓 予本案受讓人之美國專利第4,8 5 4,2 63號中。5 • 1306782 In a plasma process, electrical or electromagnetic energy can be coupled to the process gas to excite it into a plasma state. Electricity will decouple the gas mixture into ionic species to perform the desired deposition or etching process. In a capacitor-excited plasma processing chamber, the plasma is excited by an RF power source applied between the showerhead (as the anode) and the suspension (as the cathode). An example of a sprinkler head in a plasma processing chamber is disclosed in U.S. Patent No. 4,8,5,2, the entire disclosure of which is incorporated herein by reference.
一般都希望嘖灑頭能維持在能與懸吊器相當的高溫, 使喷灑頭不會冷卻懸吊器。以往的喷灑頭設計是利用相當 厚的安裝凸緣將喷灑頭安裝在製程處理室壁,其中凸緣會 因喷灑頭的熱被導至製程處理室相對較冷之室壁而維持在 不樂見的低溫。反之,2002年11月12日由White等人所 領證且受讓予本案受讓人之美國專利第6,477,980號案、 以及2004年8月1 0日由Keller等人所領證且受讓予本案 受讓人之美國專利第6,7 7 2,8 2 7號案中,係揭示一種具有 薄懸吊壁的改良式噴灑頭懸置機構,其具有高熱阻抗以讓 喷灑頭所吸收的熱(來自受熱懸吊器及電漿)維持在喷灑頭 中,藉以使噴灑頭溫度與懸吊器溫度相當。 前述美國專利案6,477,980及6,772,827中更揭示了該 懸吊壁可彎曲以容納受熱噴灑頭的熱膨脹。例如,前兩件 專利案係描述一矩形鋁喷灑頭由四片懸置部件(懸吊壁)分 隔,且該四件懸吊部件分別連接至噴灑頭的四側,每一懸 吊壁均為矩形鋁薄片。每一薄片都薄到足以彎曲,使得其 可以大致垂直於薄片表面之方向快速彎曲,來容納喷灑頭 6 .1306782 的熱膨脹。It is generally desirable that the sprinkler head be maintained at a temperature comparable to that of the suspension so that the sprinkler does not cool the suspension. In the past, the sprinkler head was designed to mount the sprinkler head on the wall of the process chamber with a relatively thick mounting flange, wherein the flange was maintained by the heat of the sprinkler head being directed to the relatively cold chamber wall of the process chamber. Unpleasant low temperature. Conversely, US Patent No. 6,477,980, which was awarded by White et al. on November 12, 2002 and assigned to the assignee of this case, and by Keller et al. on August 10, 2004, was transferred to the case. In the case of U.S. Patent No. 6,7, 2,8, 2, 7, an improved sprinkler head suspension mechanism having a thin suspension wall having a high thermal impedance for the heat absorbed by the sprinkler head is disclosed ( The heated suspension and the plasma are maintained in the sprinkler head so that the sprinkler temperature is comparable to the temperature of the sprinkler. It is further disclosed in the aforementioned U.S. Patent Nos. 6,477,980 and 6,772,827 that the suspension wall is bendable to accommodate thermal expansion of the heated showerhead. For example, the first two patents describe a rectangular aluminum sprinkler head separated by four suspension members (suspension walls), and the four suspension members are respectively attached to the four sides of the sprinkler head, each suspension wall It is a rectangular aluminum foil. Each of the sheets is sufficiently thin to bend so that it can flex rapidly in a direction substantially perpendicular to the surface of the sheet to accommodate the thermal expansion of the sprinkler 6.1306782.
前述美國專利第6,772,827(第5-7圖及第17圖)更描 述一額外的改良,其中每一懸吊壁並非堅固地接附至喷灑 頭,而是藉由喷灑頭邊緣向下凸入的銷所連接,以與每一 懸爷壁底部凸緣中的對應狹缝囁合。該等狹缝較銷為大, 以讓各懸吊壁可按平行於懸吊壁平面的水平方向(亦即垂 直於懸吊壁彎曲的方向)相對於喷灑頭作滑動。如該專利案 中所述,在處理室蓋件開放於大氣時,如此的滑動對於容 納懸置機構的快速熱收縮有相當助益,因其可使懸置機構 冷卻較厚實的噴灑頭為快。 然而,申請人發現在喷灑頭及懸置機構底部凸緣的溫 度超過攝氏220度時,鋁的黏滯現象(Stiction)有時會阻礙 了懸吊壁相對於喷灑頭作滑動。因此,若處理室蓋件在懸 置機構仍熱的時後開啟,懸置機構可能會受到熱衝擊,使 懸置機構快速冷卻及收縮,同時底部凸緣仍黏附於噴灑頭。 此外,即便銷及狹縫可成功阻卻懸置機構與喷灑頭間 的應力,該等銷與狹缝仍無法阻檔懸吊壁内因懸吊壁上方 部及下方部間有快速溫差變化所致的潛在傷害性應力。申 請人已發現在熱懸置機構突然冷卻時通常會有這樣的快速 溫差變化。這樣的快速冷卻也會在高溫製程步驟(例如熱化 學氣相沈積或電漿製程步驟)後緊接著實施低溫步驟(例如 處理室潔淨步驟)時發生。因此,業界對於可減少懸吊壁中 熱誘發應力的改良設計仍有需求。 7 1306782 【發明内容】 本發明包括各種可個別或結合使用以改善懸吊壁内熱 誘發應力的實施態樣。The aforementioned U.S. Patent No. 6,772,827 (Figs. 5-7 and 17) further describes an additional modification in which each of the suspension walls is not rigidly attached to the showerhead but is convex downwardly by the edge of the showerhead. The incoming pins are connected to engage the corresponding slits in the bottom flange of each of the hanging walls. The slits are larger than the pins so that the suspension walls can slide relative to the sprinkler head in a horizontal direction parallel to the plane of the suspension wall (i.e., perpendicular to the direction in which the suspension wall is bent). As described in the patent, such sliding is advantageous for accommodating the rapid thermal contraction of the suspension mechanism when the process chamber cover is open to the atmosphere, as it allows the suspension mechanism to cool the thicker spray head faster. . However, Applicants have found that the stiction of aluminum sometimes prevents the suspension wall from sliding relative to the sprinkler head when the temperature of the bottom flange of the sprinkler head and suspension mechanism exceeds 220 degrees Celsius. Therefore, if the process chamber cover member is opened after the suspension mechanism is still hot, the suspension mechanism may be subjected to thermal shock, causing the suspension mechanism to rapidly cool and contract while the bottom flange remains adhered to the shower head. In addition, even if the pin and the slit can successfully resist the stress between the suspension mechanism and the sprinkler head, the pins and slits cannot block the rapid temperature difference between the upper and lower portions of the suspension wall in the suspension wall. Potentially harmful stresses. Applicants have found that such rapid temperature differences typically occur when the thermal suspension is suddenly cooled. Such rapid cooling can also occur after a high temperature process step (e.g., a thermal vapor deposition or a plasma process step) followed by a low temperature step (e.g., a process chamber clean step). Therefore, there is still a need in the industry for improved designs that reduce thermally induced stresses in the suspension walls. 7 1306782 SUMMARY OF THE INVENTION The present invention includes various embodiments that can be used individually or in combination to improve thermally induced stresses in the suspension wall.
本發明其中一種態樣為一氣體密封外圍,用於封圍體 積(即,進氣空間)之側,其中製程氣體可藉由該等側自處 理室壁中的進氣口進入喷灑頭中的出氣口 。因為氣體密封 外圍具有氣體封圍功能,懸置機構較佳可設於該氣體密封 外圍所封圍之體積的外側,以使氣體密封外圍保護懸置機 構不暴露於製程氣體中。 更明確而言,氣體密封外圍係連接於處理室壁或喷灑 頭,但並非連接於兩者。氣體密封外圍未連接至處理室壁 或喷灑頭的上或下端可藉由數個間隙與處理室壁或喷灑頭 分隔,其中該等間隙的結合面積並未大於氣體密封外圍之 外表面積的三分之一。 本發明之第二態樣為一種具有一或多個懸吊壁的懸置 機構,每一懸吊壁包括一或多個開口 ,共同佔據懸吊壁至 少百分之五的面積。該等開口可減少懸吊壁暴露在製程處 理室内氣體的面積,以減少懸置機構中的應力,進而降低 懸置機構及前述氣體間的熱傳送速率。 當不慎開啟處理室蓋件而讓處理室内部在未先冷卻處 理室元件便暴露於周遭大氣時,該等開口對於減少懸吊壁 内的應力(熱衝擊)特別有利。該等開口可減少懸吊壁暴露 在周圍大氣壓力下突入處理室之冷卻空氣的面積。 本發明之第三態樣為一種具有一或多個懸吊壁之懸置 8One aspect of the present invention is a gas-tight periphery for enclosing the side of the volume (ie, the intake space), wherein the process gas can enter the sprinkler head through the air inlets in the side of the processing chamber wall. The outlet. Since the gas seal peripheral has a gas enclosing function, the suspending mechanism is preferably disposed outside the volume enclosed by the gas seal periphery so that the gas seal peripheral protection suspension mechanism is not exposed to the process gas. More specifically, the gas seal perimeter is attached to the process chamber wall or sprinkler head, but is not connected to both. The gas seal periphery is not connected to the process chamber wall or the upper or lower end of the sprinkler head can be separated from the process chamber wall or the sprinkler head by a plurality of gaps, wherein the joint area of the gaps is not greater than the surface area outside the gas seal periphery one third. A second aspect of the invention is a suspension mechanism having one or more suspension walls, each suspension wall including one or more openings that collectively occupy at least five percent of the area of the suspension wall. The openings reduce the area of the suspended wall exposed to the gas in the process chamber to reduce stress in the suspension mechanism and thereby reduce the rate of heat transfer between the suspension mechanism and the gas. Such openings are particularly advantageous for reducing stress (thermal shock) within the suspension wall when the process chamber cover is inadvertently opened and the interior of the processing chamber is exposed to the surrounding atmosphere without first cooling the chamber components. These openings reduce the area of cooling air that protrudes into the processing chamber when the suspension wall is exposed to ambient atmospheric pressure. A third aspect of the invention is a suspension having one or more suspension walls 8
1306782 機構,該等懸吊壁中各包括一或多個大致垂直配置的 (rifts)。一或多個大致垂直配置的裂口可為大致垂直 的單一裂口 、或數個任一形狀的裂口彼此以大致垂直 分隔。對本專利說明書及申請專利範圍而言,「大致I 意指垂直4 5度角内。裂口可為任一形狀的狹缝、穿孔 口 ,以整個延伸通過懸吊壁。或者,裂口可為不整個 通過懸吊壁的溝槽或缺口。較佳而言,該等裂口可藉 弱裂口位置處之壁的方式改善懸吊壁中的應力,藉以 懸韦壁回應熱應力的水平彎曲或形變。 本發明之第四態樣包括以數個懸吊壁取代該等懸 之至少一者,其中該數個懸吊壁各中心部為共平面。 個、三個或更多共平面的懸吊壁取代一懸吊壁的方式 少各懸吊壁寬度約二、三或更多倍,藉以相應地降低 吊壁中任一熱誘發應力的水平分量。 【實施方式】 1.製程處理室概述 第1及第2圖係顯示一製程處理室,其包括本發 懸吊喷灑頭2 0及氣體密封外圍7 0。在描述本發明之 將先說明製程處理室的其他元件。 製程處理室為適於化學處理工作件或基材 1 0之 處理室,該化學處理為一系列製造工作件上之電子元’ 如平面顯示器或半導體)步驟的其中一步。工作件係藉 作件支撐件1 2支撐於處理室内,該支撐件也稱為靜電 裂口 伸長 方向 ί直」 或開 延伸 由削 協助 吊壁 以兩 可減 各懸 明之 前, 真空 ,(例 由工 吸盤 9 1306782 或晶座(susceptor)。可於處理室内進行製程處理之工作件 1 0的常見範例包括上面可製造平面顯示器之矩形玻璃基 材、或上面可製造積體電路的圓形半導體晶圓。1306782 Mechanisms, each of which includes one or more substantially vertically disposed (rifts). The one or more substantially vertically disposed slits may be a substantially vertical single slit, or a plurality of slits of any shape spaced substantially perpendicular to one another. For the purposes of this patent specification and the scope of the patent application, "approximately I means a vertical angle of 45 degrees. The slit may be a slit of any shape, a perforation opening, extending the entire wall through the suspension wall. Alternatively, the breach may not be the entire By means of the grooves or notches of the suspension wall, preferably, the cracks can improve the stress in the suspension wall by means of the wall at the weak crack location, whereby the suspension wall responds to the horizontal bending or deformation of the thermal stress. A fourth aspect of the invention includes replacing at least one of the suspensions with a plurality of suspension walls, wherein the central portions of the plurality of suspension walls are coplanar. One, three or more coplanar suspension walls are substituted The manner of suspending the wall is less than two, three or more times the width of each suspension wall, thereby correspondingly reducing the horizontal component of any thermally induced stress in the hanging wall. [Embodiment] 1. Process chamber overview 1st Figure 2 shows a process chamber including a hairspray sprinkler 20 and a gas seal peripheral 70. Other components of the process chamber will be described in the description of the invention. The process chamber is suitable for chemistry Handling work pieces or substrates 10 The chemical treatment is a series of steps in the steps of manufacturing an electronic component such as a flat panel display or a semiconductor on a workpiece. The workpiece is supported in the processing chamber by a support member 12, which is also referred to as an electrostatic crack. The direction of elongation is straight or the extension is extended by the cutting aid to the wall to reduce the vacuum, (for example, by the suction cup 9 1306782 or the susceptor). The workpiece can be processed in the processing chamber. Common examples include a rectangular glass substrate on which a flat panel display can be fabricated, or a circular semiconductor wafer on which an integrated circuit can be fabricated.
製程處理室具有一蓋體或處理室壁14、16、18,其可 使處理室内部呈真空封圍。於所示實施例中,處理室之側 壁及底璧也可製造成單一壁14。處理室壁的頂部設有一鉸 蓋件16以及一進氣歧管頂壁18。工作人員可藉由升舉或 移除蓋件16的方式進出處理室内部。0型環45、46、48(若 干未顯示)可提供處理室側壁及底璧1 4、處理室蓋件1 6及 進氣歧管頂壁1 8間的真空密封。處理室側壁及底璧1 4、 處理室蓋件1 6及進氣歧管頂壁1 8皆為處理室壁可考量的 部分。 於工作件上進行製造半導體或其他電子元件的製程 中,或將一或多種製程氣體經由進氣歧管分配至處理室 中。進氣歧管包括進氣歧管頂壁1 8、噴灑頭2 0 (也稱為散 流器或氣體散流板)以及進氣歧管側壁(下文將再予界 定),其等共同圍繞一體積,此處稱為進氣空間(gas inlet plenum)30,而構成進氣歧管的内部區域。 至少一進氣通道2 6會耦接於外部氣體源(未示出)及 進氣空間3 0之間。於第1圖實施例中,進氣通道為一延伸 過進氣歧管頂壁1 8的開口或管部。該氣體源可供應製程氣 體至進氣通道2 6,使氣體由該處流入進氣空間3 0,接著經 由喷灑頭 2 0中的出氣通道 2 2由進氣空間流入處理室内 部。數百或數千各個進氣通道2 2通常是均勻分佈在噴灑頭The process chamber has a lid or chamber wall 14, 16, 18 that allows the chamber interior to be vacuum sealed. In the illustrated embodiment, the side walls and bottom sill of the processing chamber can also be fabricated as a single wall 14. A hinge member 16 and an intake manifold top wall 18 are provided at the top of the processing chamber wall. The worker can enter and exit the interior of the processing chamber by lifting or removing the cover member 16. Type 0 rings 45, 46, 48 (not shown) provide a vacuum seal between the process chamber side wall and bottom sill 14, the process chamber cover 16 and the intake manifold top wall 18. The process chamber side wall and bottom sill 14 , the process chamber cover member 16 and the intake manifold top wall 18 are all part of the process chamber wall. One or more process gases are dispensed into the processing chamber via the intake manifold during processing of the semiconductor or other electronic components on the workpiece. The intake manifold includes an intake manifold top wall 18, a sprinkler head 20 (also referred to as a diffuser or a gas diffuser), and an intake manifold sidewall (which will be further defined below), which together surround one The volume, referred to herein as the gas inlet plenum 30, constitutes the interior region of the intake manifold. At least one of the intake passages 26 is coupled between an external source of gas (not shown) and the intake space 30. In the embodiment of Figure 1, the intake passage is an opening or tube portion that extends through the top wall 18 of the intake manifold. The gas source can supply a process gas to the intake passage 26, from which the gas flows into the intake space 30, and then flows into the processing chamber from the intake space via the outlet passage 22 in the sprinkler 20. Hundreds or thousands of individual intake passages 2 2 are usually evenly distributed over the sprinkler head
1010
1306782 的整個區域。 習知真空幫浦(未示出)可將處理室内維持在所欲 空位準,並經由環形排氣狹縫3 1將製程氣體及反應產 處理室排出,接著排入環形排氣空間3 2,繼而通過排 道(未示出)進入幫浦。 進氣歧管側壁則界定為一或多個製程處理室元件 可共同提供進氣歧管頂壁1 8及喷灑頭2 0間的氣體密 於第2圖所示較佳實施例中,本發明新穎的氣體密封 70 (下文將詳述)也可作為進氣歧管側壁。於未設氣體 外圍(但其餘皆同)的替換實施例中,懸置機構5 0便可 進氣歧管側壁。 進氣歧管側壁應能提供充分緊密的氣體密封一亦 足以阻止氣體洩漏(藉由流經噴灑頭出氣通道2 2而非 氣歧管側壁中的間隙洩漏的方式)一以使流入進氣空P 的多數氣體進入製程處理室内部。可接受的洩漏量取 工作件上實施的製程,但於多數製程中洩漏應小於百 十。亦即,經由進氣通道26進入進氣空間之氧體只有 百分之十(十分之一)應經由進氣歧管側壁茂漏,使至 分之九十的氣體經由進氣通道2 2分配至製程處理室。 的情況下,進入進氣空間的氣體不應有超過百分之 經由進氣歧管側壁泡漏出。 進氣歧管一般包含進氣轉向板(gas deflector)28,以阻止氣體按直線路徑由進氣通道26 喷灑頭中心處筆直緊鄰的出氣通道2 2,藉以協助喷灑 的真 物自 氣通 ,其 封。 外圍 密封 作為 即, 由進 J] 3 0 決於 分之 小於 少百 最壞 四十 inlet 流入 頭中 11 1306782 心及邊緣處的各個氣體流率均勻化。於第1圖實施例中, 進氣轉向板 28係由圓形盤組成,其直徑略大於進氣通道 26之直徑,且藉由柱部(未示出)懸吊於進氣通道下方。 於較佳實施例中,喷灑頭2 0為3公分厚的鋁板。較佳 而言,該鋁板應夠厚至足以使其在大氣壓力下處理室内形 成真空時不會明顯變形。The entire area of 1306782. A conventional vacuum pump (not shown) can maintain the processing chamber at a desired level, and discharge the process gas and the reaction processing chamber through the annular exhaust slit 31, and then discharge into the annular exhaust space 3 2, The pump is then accessed through a drain (not shown). The intake manifold sidewall is defined as one or more process chamber components that together provide a gas tightness between the intake manifold top wall 18 and the sprinkler head 20 in the preferred embodiment shown in FIG. A novel gas seal 70 (described in more detail below) can also be used as the intake manifold sidewall. In an alternative embodiment where no gas is present (but the remainder are the same), the suspension mechanism 50 can be ingested into the manifold sidewall. The side wall of the intake manifold should be capable of providing a sufficiently tight gas seal that is sufficient to prevent gas leakage (by flowing through the sprinkler outlet passage 2 2 rather than the gap in the side of the gas manifold) to allow inflow of air into the air Most of the P gas enters the process chamber. The acceptable amount of leakage is taken from the process performed on the work piece, but in most processes the leak should be less than one hundred. That is, only ten percent (tenth) of the oxygen entering the intake space via the intake passage 26 should be leaked through the sidewall of the intake manifold, so that ninety percent of the gas passes through the intake passage 2 2 Assigned to the process chamber. In the case of the gas entering the intake space, there should be no more than 5% of the gas leaking through the sidewalls of the intake manifold. The intake manifold generally includes a gas deflector 28 to prevent gas from being in a straight path from the inlet passage 22 at the center of the nozzle of the intake passage 26 to assist in the spontaneous flow of the spray. , its seal. The peripheral seal is as follows, from J] 3 0 to less than less than 100 worst than forty inlet into the head 11 1306782 The gas flow rate at the heart and the edge is uniformized. In the embodiment of Fig. 1, the intake steering plate 28 is composed of a circular disk having a diameter slightly larger than the diameter of the intake passage 26 and suspended by the column portion (not shown) below the intake passage. In the preferred embodiment, the showerhead 20 is a 3 cm thick aluminum panel. Preferably, the aluminum sheet should be thick enough to not significantly deform when a vacuum is created in the processing chamber at atmospheric pressure.
喷灑頭2 0周圍是以可彎曲懸置機構懸吊,其包含一或 多個懸吊壁5 0。懸置機構的彎曲性能容納喷灑頭在溫度升 降時的快速膨脹及收縮。懸置機構下文將在標題「2.用於 喷灑頭之可彎曲懸置機構」中細述。 於製程處理室中進行的某些類型工作件製造製程(例 如熱化學氣相沈積)係於無電漿下實施。許多其他製程(如 電漿增強型化學氣相沈積或電漿蝕刻製程)則需要電漿。適 用於電漿製程的製程處理室稱為電漿處理室。 於一類型的電漿處理室中,係藉由電容耦合電源(利用 連接至處理室内之電極的射頻電源供應器(未示出))予電 漿的方式於處理室内形成或維持將電源。於電容耦合電漿 處理室中,噴灑頭2 0通常是由導電材料(較佳為鋁)組成, 以使其作為電極。因此,提供充分導電及穩定的電性接觸 予喷灑頭以操控射頻電源的高位準(通常為千瓦級)非常重 要。 於某些電漿處理室配置中,喷灑頭2 0係直接連接至電 性接地的處理室壁 14-18。然而,所示實施例之電漿處理 室配置中喷灑頭 2 0係電性接至射頻電源供應器的一不接 12The sprinkler head 20 is surrounded by a flexible suspension mechanism that includes one or more suspension walls 50. The bending properties of the suspension mechanism accommodate rapid expansion and contraction of the showerhead as the temperature rises and falls. The suspension mechanism will be described in detail below in the heading "2. Flexible suspension mechanism for sprinkler heads". Certain types of work piece manufacturing processes (e.g., thermal chemical vapor deposition) performed in a process chamber are performed without plasma. Many other processes, such as plasma enhanced chemical vapor deposition or plasma etching processes, require plasma. The process chamber suitable for the plasma process is called a plasma processing chamber. In a type of plasma processing chamber, the power source is formed or maintained in the processing chamber by means of a capacitively coupled power source (using a radio frequency power supply (not shown) connected to the electrodes in the processing chamber). In the capacitively coupled plasma processing chamber, the showerhead 20 is typically comprised of a conductive material, preferably aluminum, to serve as an electrode. Therefore, it is important to provide a fully conductive and stable electrical contact to the sprinkler head to handle the high level of RF power (usually in kilowatts). In some plasma processing chamber configurations, the showerhead 20 is directly connected to the electrically grounded chamber walls 14-18. However, in the plasma processing chamber configuration of the illustrated embodiment, the showerhead 20 is electrically connected to the RF power supply.
1306782 地輸出,以使喷灑頭作為陽極。處理室側及底璧1 4以及 理室蓋件1 6係連接至電接地端並因此可作為陰極。懸吊 或工作件支撐件1 2 —般也是電性接地,但可選擇性連接 第二射頻電源供應器(通常稱為偏壓電源供應器)。本發 無論是否喷灑頭為射頻供電都相當有用。 因為進氣歧管頂壁1 8及噴灑頭2 0為射頻供電,介 襯墊3 3、3 4、3 5、3 6安裝於此等射頻供電的元件以及電 接地之處理室蓋件1 6之間。為將電漿集中在處理室中工 件支撐件1 2及噴灑頭2 0之間,處理室中靠近工作件支 件或喷灑頭的其他金屬表面通常會以介電襯墊覆蓋。 如,第1圖係顯示一覆蓋處理室蓋件16之介電襯墊3 7 覆蓋處理室側壁1 4之内表面的介電襯墊3 8。 蓋體19通常是接附至處理室蓋件16的頂部,以保 工作人員不會意外接觸射頻供電的頂壁1 8或噴灑頭。由 蓋體 1 9對於此處所述其他處理室元件的功能並非如此 要,下文不會再作進一步討論。 於電漿處理室中,噴灑頭中的出氣通道2 2直徑應小 電漿暗區的寬度,以避免電漿處理室内的電漿進入進氣 間3 0。暗區寬度以及因應的排氣通道之最佳直徑,乃取 於處理室所欲實施之特定半導體製造製程的處理室壓力 其他參數。或者,為利用特別難以分解之試劑氣體實施 漿製程,一般可能希望利用具有窄入口以及寬、喇叭狀 口的通道,如前文提及授予 Chang 等人之美國專利 4,854,263號案中所述。 處 器 至 明 電 性 作 撐 例 及 護 於 重 於 空 決 及 電 出 第 131306782 Ground output so that the sprinkler head acts as the anode. The process chamber side and bottom dam 14 and the chamber cover 16 are connected to the electrical ground and thus act as a cathode. The suspension or work piece support 12 is also typically electrically grounded, but is selectively connectable to a second RF power supply (commonly referred to as a bias power supply). This is useful whether the sprinkler head is powered by RF. Because the intake manifold top wall 18 and the sprinkler 20 are RF powered, the interposer 3 3, 3 4, 3 5, 3 6 is mounted to the RF powered component and the electrically grounded process chamber cover 16 between. To concentrate the plasma between the workpiece support 12 and the showerhead 20 in the processing chamber, other metal surfaces in the processing chamber adjacent to the workpiece support or sprinkler are typically covered with a dielectric liner. For example, Figure 1 shows a dielectric liner 38 covering the inner surface of the process chamber sidewall 14 from a dielectric liner 37 covering the process chamber cover 16. The cover 19 is typically attached to the top of the process chamber cover 16 to ensure that the operator does not accidentally contact the RF powered top wall 18 or sprinkler head. The function of the cover 1 9 for the other process chamber components described herein is not so important and will not be discussed further below. In the plasma processing chamber, the diameter of the outlet passage 2 in the sprinkler head should be small to the width of the dark region of the plasma to prevent the plasma in the plasma processing chamber from entering the intake space. The width of the dark zone and the optimum diameter of the corresponding exhaust passage are other parameters of the process chamber pressure of the particular semiconductor fabrication process to be performed by the process chamber. Alternatively, in order to carry out the sizing process with a reagent gas which is particularly difficult to decompose, it is generally possible to utilize a channel having a narrow inlet and a wide, horn-like opening, as described in the above-mentioned U.S. Patent No. 4,854,263 to Chang et al. From the device to the electric property as a support case and protect against the air and power out
1306782 處理室元件應由不會污染半導體製造製程(欲實施於 處理室中)、且可抵抗製程氣體腐蝕的元件組成。鋁為吾人 認為用於處理室内所有元件(除0型環及介電襯墊3 3 - 3 6) 的較佳材料。 2.用於噴灑頭之可彎曲懸置機構 第2及3圖更詳細顯示懸置機構。喷灑頭2 0係由可彎 曲懸置機構所懸吊,可彎曲懸置機構包括一或多個可彎曲 懸吊壁5 0。懸置機構的彎曲性可容納喷灑頭在溫度升降時 的快速膨脹及收縮。 喷灑頭 2 0膨脹的量與喷灑頭的溫度及其寬度兩者成 比例。由於寬度的關係,在處理較大工作件(例如大型面板 顯示器)所需較大喷灑頭時,能否不發生機械應變下容納噴 灑頭的熱膨脹就變的相當重要。為最小化來自工作件及懸 吊器傳至喷灑頭的熱,一般希望能將喷灑頭溫度維持在攝 氏3 5 0至4 0 0度,同時於處理室中進行化學氣相沈積製程。 於如此高溫下,鋁喷灑頭在各維度上會有約百分之一(1 %) 的膨脹。例如,寬度1 〇 5公分X 1 2 5公分的喷灑頭會膨脹約 1 2釐米。而噴灑頭的各邊緣會相對於喷灑頭中心處的固定 參考點向外膨脹此量的一半(〇 . 5 %)。 於處理室一般操作期間,當喷灑頭2 0的寬度回應其溫 度增加而膨脹時,噴灑頭會推動可彎曲懸掛壁5 0向外彎曲 (亦即,以沿著噴灑頭半徑方向,其大概垂直於懸置機構的 平面)喷灑頭所膨脹的量。 141306782 Process chamber components shall consist of components that do not contaminate the semiconductor fabrication process (to be implemented in the process chamber) and that are resistant to process gas corrosion. Aluminum is a preferred material that we consider to be used to treat all components in the room (except 0-rings and dielectric pads 3 3 - 3 6). 2. Flexible suspension mechanism for sprinkler heads Figures 2 and 3 show the suspension mechanism in more detail. The sprinkler head 20 is suspended by a bendable suspension mechanism that includes one or more flexible suspension walls 50. The flexibility of the suspension mechanism accommodates the rapid expansion and contraction of the sprinkler head as the temperature rises and falls. The amount of expansion of the sprinkler 20 is proportional to both the temperature of the sprinkler head and its width. Due to the width, it is important to accommodate the thermal expansion of the sprinkler head without mechanical strain when handling larger sprinkler heads for larger workpieces (e.g., large panel displays). In order to minimize the heat transfer from the workpiece and the suspension to the showerhead, it is generally desirable to maintain the sprinkler temperature at 305 to 4,000 degrees Celsius while performing a chemical vapor deposition process in the processing chamber. At such high temperatures, the aluminum sprinkler will have about one percent (1%) expansion in all dimensions. For example, a sprinkler head with a width of 1 〇 5 cm X 1 2 5 cm will expand by about 12 cm. The edges of the sprinkler head expand outward by half (〇. 5 %) outward relative to the fixed reference point at the center of the sprinkler head. During normal operation of the processing chamber, when the width of the showerhead 20 expands in response to an increase in its temperature, the showerhead pushes the bendable suspension wall 50 outwardly (i.e., along the radial direction of the showerhead, which is approximately The amount of expansion of the sprinkler head perpendicular to the plane of the suspension mechanism. 14
1306782 為支撐喷灑頭的重量,可彎曲懸置機構5 0的上方 直接或間接連接至處理室壁1 4 -1 8,且懸置機構之下 亦直接或間接連接至喷灑頭2 0。所謂「間接連接」係 置機構的上方部與處理室壁之間可能連接有中間元件 如介電襯墊或安裝凸緣。同樣的,前述中間元件也可 於懸置機構之下方部及喷灑頭之間。 在本專利說明書中,當描述兩個元件相連接時, 特別指明,否則它們也可為直接或間接連接,而兩個 也可建構為單一材料部件,而非兩個獨立部件彼此相 例如,懸置機構5 0及喷灑頭2 0可由單一鋁塊加工而」 所示實施例係用於處理其上欲製造平面顯示器之 矩形玻璃基材或工作件1 0。工作件支撐件或晶座1 2、 歧管頂壁1 8以及噴灑頭2 0截面均為矩形。懸置機構 包含四個懸吊壁5 0,分別連接至喷灑頭的四側。四個 壁之各者為一鋁片,其具.有延伸於進氣歧管頂壁18及 頭之間的中心平面部。中心平面部薄至足以彎曲,以 可回應噴灑頭熱膨脹及收縮而作彎曲。 四個板片50之各者於靠近其上端處呈直角彎曲, 成上凸緣52;並於靠近其下端處呈直角彎曲以形成下 54,如第3圖所示。 各懸吊壁5 0之上凸緣5 2係以螺栓4 0接附至進氣 頂壁1 8。較佳而言,各上凸緣5 2與進氣歧管頂壁的 可藉由鋁條4 2強化之,鋁條具有U型截面,延伸各 緣5 2的整個寬度,並位於該螺栓頭及上凸緣之間。所 部係 方部 指懸 ,例 連接 除非 元件 接。 寻。 大型 進氣 至少 懸吊 喷灑 使其 以形 凸緣 歧管 連接 上凸 示實 151306782 To support the weight of the sprinkler head, the upper portion of the bendable suspension mechanism 50 is directly or indirectly connected to the treatment chamber wall 14-14, and the suspension mechanism is also directly or indirectly connected to the sprinkler head 20. Intermediate elements such as dielectric pads or mounting flanges may be connected between the upper portion of the "indirect connection" mechanism and the process chamber wall. Similarly, the aforementioned intermediate member can also be between the lower portion of the suspension mechanism and the showerhead. In the present specification, when two elements are described as being connected, it is specifically indicated that otherwise they may be directly or indirectly connected, and two may also be constructed as a single material component, rather than two separate components, for example, suspended. The mechanism 50 and the sprinkler 20 can be machined from a single piece of aluminum. The embodiment shown is for processing a rectangular glass substrate or workpiece 10 on which a flat panel display is to be fabricated. The workpiece support or the crystal holder 1 2, the manifold top wall 18 and the sprinkler head 20 are all rectangular in cross section. The suspension mechanism includes four suspension walls 50 that are respectively connected to the four sides of the showerhead. Each of the four walls is an aluminum sheet having a central planar portion extending between the top wall 18 of the intake manifold and the head. The central plane portion is thin enough to bend to bend in response to thermal expansion and contraction of the showerhead. Each of the four sheets 50 is bent at a right angle near its upper end to form an upper flange 52; and bent at a right angle near its lower end to form a lower portion 54, as shown in Fig. 3. The flanges 5 2 above each of the suspension walls 50 are attached to the intake top wall 18 by bolts 40. Preferably, each of the upper flanges 52 and the top wall of the intake manifold may be reinforced by an aluminum strip 42 having a U-shaped cross section extending the entire width of each edge 52 and located at the bolt head. And between the upper flanges. The part of the department refers to the suspension, and the connection is made unless the component is connected. Searching. The large intake air is at least suspended and sprayed so that it is connected by a flanged manifold.
1306782 施例包括四個強化條部4 2,每一上凸緣5 2適配一條部。 各懸吊壁之下凸緣 5 4係可滑動地安裝於噴灑頭邊 6 0中的溝槽6 2内。未避免下凸緣5 4由溝槽6 2滑出, 下凸緣具有數個安裝孔5 6、5 7,且各安裝孔皆囁合一自 灑頭邊緣向下延伸之對應銷6 4。如第2圖所示,喷灑頭 緣包括一鄰近各銷之切口(cutout),以提供銷插入的空間 在插入後,各銷之下端可向内彎折以使其卡合在喷灑頭 緣的小向外突出部之上,避免銷掉入。 如第3圖所示,少數靠近各下凸緣5 4中心處的安裝 5 6是呈圓形,其直徑僅略大於銷的直徑,界已維持喷灑 中心以及懸吊壁5 0之間的對齊。其餘安裝孔5 7則以平 於下凸緣長直徑之方向拉長,以讓喷灑頭及下凸緣間沿 述方向(亦即,沿平行喷灑頭邊緣之水平方向以及垂直懸 壁中心部平面的垂直方向)有相對的熱膨脹及收縮。 可彎曲懸置機構5 0可支撐前述第1圖實施例中喷灑 的整個重量。由於此實施例的懸置機構僅有鄰近其邊緣 支撐喷灑頭,噴灑頭中心會隨時間而下陷。為避免中心 陷,較佳係將喷灑頭中心支撐件1 〇 0 -1 0 8加至懸置機構 如第4圖所示。 噴灑頭中心支撐件 1 00- 1 08具有一管狀氣體導 1 0 0,延伸過進氣歧管頂壁 1 8中的中心開口 。噴灑頭 於其上表面中心處具有一凹洞,延伸喷灑頭約三分之二 深度。氣體導管之下端會延伸至此凹洞並藉凸緣機械地 撐喷灑頭中心,該凸緣係自氣體導管下端往外徑向延伸 緣 各 喷 邊 〇 邊 孔 頭 行 前 掛 頭 處 下 ? 管 20 的 支 以 16 1306782 抵鄰喷灑頭互補凸緣(徑向向内延伸於凹洞開口之上)的底 面。因此,中心支撐件1 00- 1 08會支撐噴灑頭重量的一部 份,而可彎曲懸置機構5 0則支撐其餘重量。1306782 The embodiment includes four reinforcing strips 4 2, each of which is fitted with a portion. The flanges 54 4 below each of the suspension walls are slidably mounted in the grooves 6 2 in the sprinkler head 60. The lower flange 5 4 is unavoidably slipped out of the groove 6 2 , and the lower flange has a plurality of mounting holes 5 6 , 5 7 , and each of the mounting holes is fitted with a corresponding pin 6 4 extending downward from the edge of the sprinkler head. As shown in Fig. 2, the sprinkler head includes a cutout adjacent to each pin to provide space for the pin to be inserted. After insertion, the lower ends of the pins can be bent inwardly to engage the sprinkler head. The small edge of the edge is above the protruding portion to prevent the pin from falling in. As shown in Fig. 3, a few of the mountings 56 near the center of each lower flange 504 are circular, the diameter of which is only slightly larger than the diameter of the pin, and the boundary between the spray center and the suspended wall 50 is maintained. Align. The remaining mounting holes 57 are elongated in a direction parallel to the long diameter of the lower flange to allow the sprinkler head and the lower flange to be oriented (i.e., along the horizontal direction of the parallel sprinkler head and the center of the vertical cantilever) The vertical direction of the plane has relative thermal expansion and contraction. The bendable suspension mechanism 50 can support the entire weight of the spray in the first embodiment of Fig. 1. Since the suspension mechanism of this embodiment only supports the sprinkler head adjacent its edge, the center of the sprinkler head will sink over time. In order to avoid centering, it is preferred to add the sprinkler head center support 1 〇 0 -1 0 8 to the suspension mechanism as shown in Fig. 4. The sprinkler head center support 1 00- 1 08 has a tubular gas guide 100 that extends through a central opening in the top wall 18 of the intake manifold. The sprinkler head has a recess at the center of its upper surface that extends the sprinkler head by approximately two-thirds of its depth. The lower end of the gas conduit extends to the recess and mechanically supports the center of the sprinkler by a flange which is extended from the lower end of the gas conduit to the outer radial edge of each of the spouts. The support is 16 1306782 adjacent to the bottom surface of the complementary flange of the sprinkler head (radially extending inwardly over the opening of the recess). Thus, the center support member 100-108 supports a portion of the weight of the sprinkler head, while the flexible suspension mechanism 50 supports the remaining weight.
數個徑向延伸的氣體通道1 0 2可將氣體導管1 0 0耦接 至進氣空間30。一或多個向下延伸的通道104會將氣體導 管内部耦接至凹洞或氣體導管底部與喷灑頭氣體通道 2 2 (凹洞下方)上端之間的空間。因此,氣體導管1 0 0及氣 體通道102、104内部結合起來便成為進氣通道26。 氣體導管 1 0 0之上端藉由安裝環 1 0 6及制動螺桿 1〇8(使氣體導管高度可作調整)安裝於處理室蓋體19。升 起氣體導管可將喷灑頭1 02中心提高。因此,氣體導管的 高度可作調整,以避免喷灑頭中心下陷或達喷灑頭所欲之 輪廓。 安裝環1 0 6可圍繞氣體導管1 0 0的部分而延伸通過處 理室蓋體。安裝環106係堅固接附至處理室蓋體,較佳係 藉由螺栓的方式為之。氣體導管的上端藉由數個制動螺桿 接附至安裝環的上端,以使氣體導管的高度可藉由旋轉螺 栓的方式進行調整。更明確而言,氣體導管的上端具有向 外延伸之凸缘,其具有數個螺孔以承接制動螺桿。各螺栓 之下端係延伸至安裝環中之螺孔。制動螺桿(jack screw) 為一種普通螺栓,名詞「制動(j ack)」僅為描述其功能。 本發明下文所述全部態樣對於第4圖具有喷灑頭中心 支撐件的實施例、以及第1圖不具前述中心支撐件的實施 例皆有助益。A plurality of radially extending gas passages 1 0 2 couple the gas conduits 100 to the intake space 30. One or more downwardly extending passages 104 couple the interior of the gas conduit to the space between the bottom of the cavity or gas conduit and the upper end of the sprinkler gas passage 2 2 (below the recess). Therefore, the gas conduit 100 and the gas passages 102, 104 are internally combined to become the intake passage 26. The upper end of the gas conduit 1 0 0 is attached to the process chamber cover 19 by a mounting ring 106 and a brake screw 1〇8 (the gas conduit height can be adjusted). Raising the gas conduit raises the center of the sprinkler 102. Therefore, the height of the gas conduit can be adjusted to avoid sinking the center of the sprinkler or reaching the desired contour of the sprinkler head. The mounting ring 106 extends through the processing chamber cover around a portion of the gas conduit 100. The mounting ring 106 is rigidly attached to the process chamber cover, preferably by means of bolts. The upper end of the gas conduit is attached to the upper end of the mounting ring by a plurality of brake screws so that the height of the gas conduit can be adjusted by rotating the bolt. More specifically, the upper end of the gas conduit has an outwardly extending flange having a plurality of threaded holes for receiving the brake screw. The lower end of each bolt extends to a threaded hole in the mounting ring. The jack screw is a common bolt, and the term "j ack" is only used to describe its function. All of the aspects described below of the present invention are useful for the embodiment of Figure 4 having a sprinkler head center support and the embodiment of Figure 1 without the aforementioned center support.
17 .1306782 3 .冷卻期間懸置機構應力的問題 為最小化懸置機構5 0及喷灑頭2 0間因熱膨脹差異造 成的應力,懸置機構及喷灑頭較佳係由相同材料組成,較 佳為鋁,以使其回應溫差時有相同量的膨脹與收縮。此外, 先前所述將各懸吊壁之下凸緣滑動接附至(利用數個與伸 長孔洞囁合的銷)喷灑頭的方法可使懸吊壁及喷灑頭間有 特定的相對移動量,以容納可能因懸吊壁與喷灑頭間之溫 差所導致的熱膨脹差異。17 .1306782 3. The problem of the suspension mechanism stress during cooling is to minimize the stress caused by the difference in thermal expansion between the suspension mechanism 50 and the sprinkler head 20, and the suspension mechanism and the sprinkler head are preferably made of the same material. Aluminum is preferred so that it has the same amount of expansion and contraction in response to temperature differences. In addition, the method of slidingly attaching the lower flange of each suspension wall to the sprinkler head (using a plurality of pins that are engaged with the elongated holes) as described above allows for a specific relative movement between the suspension wall and the sprinkler head. The amount to accommodate the difference in thermal expansion that may be caused by the temperature difference between the suspension wall and the showerhead.
然而,如發明背景所述,懸吊壁内溫度梯度的快速差 異會致使懸吊壁内有應力產生,而最後使懸置機構變形、 破裂或扯裂。於實務中,此種溫度梯度的快速差異通常是 因實施製程順序中的高溫製程步驟(如熱化學氣相沈積或 電漿製程步驟)時懸吊壁的快速冷卻所致。同樣的,若處理 室蓋件1 6不慎打開,且在未先使處理室元件(特別是喷灑 頭)冷卻至室溫便使懸吊壁5 0暴露於周遭大氣而快速冷卻 時,快速冷卻的情況就會發生。 當前述快速冷卻發生時,懸吊壁5 0通常會因其可能較 佳是較喷灑頭為薄(而因此有較低的熱質量)的關係而冷卻 較喷灑頭2 0為快。懸吊壁傾向能夠薄到可作極度彎曲,使 其可向外彎曲而容納噴灑頭的熱膨脹。反之,喷灑頭也至 少應夠厚到足以避免喷灑頭回應溫度梯度時下表面輪廓的 變形,因任何前述變形都將使工作件上正進行的製程有空 間上的不均勻。例如,於較佳實施例中懸吊壁ί呂板厚度為 1mm,而銘喷灌頭厚度為30mm。 18However, as described in the Background of the Invention, rapid differences in temperature gradients within the suspension wall can cause stress in the suspension wall and eventually deform, rupture or tear the suspension mechanism. In practice, this rapid difference in temperature gradient is usually caused by rapid cooling of the suspension wall during high temperature processing steps (such as thermal chemical vapor deposition or plasma processing steps) in the process sequence. Similarly, if the process chamber cover 16 is inadvertently opened and the suspension wall 50 is exposed to the surrounding atmosphere without rapid cooling of the process chamber components (especially the sprinkler head) to room temperature, the rapid cooling is rapid. Cooling will happen. When the aforementioned rapid cooling occurs, the suspension wall 50 will typically cool faster than the showerhead 20 because it may be thinner (and therefore lower in thermal mass) than the showerhead. The hanging wall tends to be so thin that it can be bent so that it can flex outwardly to accommodate the thermal expansion of the sprinkler head. Conversely, the sprinkler head should be at least thick enough to avoid deformation of the contour of the lower surface when the sprinkler head responds to the temperature gradient, as any of the foregoing variations will result in spatial non-uniformity in the process being performed on the workpiece. For example, in the preferred embodiment, the thickness of the wall is 1 mm and the thickness of the nozzle is 30 mm. 18
•1306782 當冷卻氣體供應至進氣空間3 0時,懸吊壁5 0將 懸吊壁有較低的熱質量而冷卻較噴灑頭2 0快些。此外 喷灑頭冷卻較慢且具有較高的熱質量,喷灑頭會傳熱 懸吊壁之下方部,以避免下方部冷卻的與上方部一樣 各懸吊壁 5 0的冷上方部與熱下方部間的溫度梯度會 懸吊壁中形成機械應力,這是因為上方部冷卻較快, 收縮較下方部為快。此種由溫度梯度所導致的機械應 常稱為熱應力或熱衝擊。 本發明提出四種解決方案,其可單獨或結合使用 低懸吊壁中的熱應力:(1) 一氣體密封外圍,其可協助 懸吊壁不會直接與製程氣體接觸;(2)懸吊壁中的開口 在處理室蓋件開啟時可減少懸吊壁暴露於製程氣體或 溫度的機會;(3 ) —或多個大致垂直配置之裂口,位於 壁中以協助懸吊壁的水平彎折或彎曲;(4)數個懸吊壁 各自之中心部為共平面。 4.氣體密封外圍 如第1、2、4及5圖所示,本發明之一態樣為氣 封外圍7 0,其用於封圍體積(即,進氣空間3 0)之側邊 程氣體會由處理室壁中的進氣口 2 6經由該體積流入 頭20中的出氣口 22。 於發明背景中所述之習知懸吊噴灑頭中,進氣空 測邊係以懸吊壁封圍。於本發明態樣中,是藉由氣體 外圍7 0提供此氣體封圍的功能,而非懸吊壁。因此, 會因 ,因 予各 快。 於各 故其 力通 以降 保護 ,其 周圍 懸吊 ,其 體密 ,製 噴灑 間的 密封 本發 19 .1306782 明係使懸吊壁 5 0較佳地位於氣體密封外圍所封圍的體積 (亦即,進氣空間3 0)外側,以使氣體密封外圍介於進氣空 間3 0及懸吊壁5 0之間,如第1、2、4及5圖之較佳實施 例所示。於此較佳實施例中,氣體密封外圍可保護懸吊壁 不會直接接觸進入處理室中的製程氣體,藉此可在處理室 中進行熱製程後突然有冷的製程氣體供入時,降低懸置機 構内的冷卻速率以及溫度梯度。• 1306782 When the cooling gas is supplied to the intake space 30, the suspension wall 50 has a lower thermal mass of the suspension wall and is cooled faster than the showerhead 20. In addition, the sprinkler head cools slowly and has a high thermal mass, and the sprinkler head heats the lower part of the suspension wall to avoid the cold upper part of the suspended wall 50 and the heat which is cooled in the lower part. The temperature gradient between the lower sections creates mechanical stress in the suspension wall because the upper part cools faster and the lower part shrinks faster than the lower part. Such a machine caused by a temperature gradient is often referred to as thermal stress or thermal shock. The present invention proposes four solutions that can be used alone or in combination with thermal stresses in the low suspension wall: (1) a gas-tight periphery that assists the suspension wall not directly in contact with the process gas; (2) suspension The opening in the wall reduces the chance of the suspension wall being exposed to process gas or temperature when the process chamber cover is opened; (3) - or a plurality of substantially vertically configured slits located in the wall to assist in horizontal bending of the suspension wall Or curved; (4) the center of each of the plurality of suspension walls is coplanar. 4. Gas Seal Periphery As shown in Figures 1, 2, 4 and 5, one aspect of the present invention is a gas seal periphery 70 which is used to seal the lateral volume of the volume (i.e., the intake space 30). Gas will flow into the air outlet 22 in the head 20 via the volume of the air inlet 26 in the wall of the process chamber. In the conventional suspension sprinkler head described in the background of the invention, the intake air measurement edge is enclosed by a suspension wall. In the aspect of the invention, the gas enclosure function is provided by the gas periphery 70 instead of the suspension wall. Therefore, it will be due to the fact that it will be faster. For each reason, the force is lowered to protect, the surrounding is suspended, and the body is dense, and the seal between the spray booths is 19.1306782. The suspension wall 50 is preferably located at the outer circumference of the gas seal (also That is, the outer side of the intake space 3 0) is such that the gas seal periphery is interposed between the intake space 30 and the suspension wall 50, as shown in the preferred embodiments of Figures 1, 2, 4 and 5. In the preferred embodiment, the gas-tight periphery protects the suspension wall from direct contact with the process gas entering the processing chamber, thereby reducing the sudden supply of cold process gas after the thermal process in the processing chamber. Cooling rate and temperature gradient within the suspension mechanism.
於第4圖之替代實施例中,可彎曲懸吊壁5 0係維持在 進氣空間3 0外側,但懸置機構更包括一位於進氣空間内的 喷灑頭中心支撐件1 〇 〇。亦即,中心支撐件1 〇 〇並未受氣 體密封外圍7 0保護不與製程氣體接觸。 現暫放下所述實施例,回頭參照本發明的一般說明, 氣體密封外圍7 0係延伸於一鄰近處理室壁1 4 -1 8之上方部 以及一鄰近喷灑頭 2 0之下方部之間。如下面三段所將解 釋,「鄰近(adjacent)」意指「連接至(connected to)」、「鄰 抵(abutting)」或「藉由下文所界定之一或多個間隙分隔 (separated from by one or more of the gaps defined in the following paragraphs)」。 氣體密封外圍7 0係連接至處理室壁或喷灑頭,但並未 連接至兩者。亦即,要不氣體密封外圍之上端是連接至處 理室壁、就是氣體密封外圍之下端連接至喷灑頭,但並非 兩者皆連接。因此,與連接至處理室壁與喷灑頭兩者之懸 置機構5 0不同的是,氣體密封外圍並不會支撐噴灑頭的重 量,且氣體密封外圍有較多的自由度可作膨脹與收縮,而 20 ‘1306782 不會受限於喷灑頭及處理室壁間的距離。氣體密封外圍未 連接至處理室壁或喷灑頭的上或下端稱為氣體密封外圍的 「未連接」端。In an alternative embodiment of Fig. 4, the flexible suspension wall 50 is maintained outside of the intake space 30, but the suspension mechanism further includes a sprinkler center support 1 〇 in the intake space. That is, the center support member 1 is not protected from the process gas by the gas seal peripheral portion 70. The embodiment is now placed, and with reference to the general description of the invention, the gas seal peripheral 70 extends between an upper portion adjacent the processing chamber wall 14-1.8 and a lower portion adjacent the sprinkler head 20 . As explained in the following three paragraphs, "adjacent" means "connected to", "abutting" or "separated from by" as defined below. One or more of the gaps defined in the following paragraphs). The gas seal perimeter 70 is attached to the process chamber wall or sprinkler head but is not connected to both. That is, the upper end of the gas-tight outer periphery is connected to the processing chamber wall, that is, the lower end of the gas-sealed periphery is connected to the shower head, but not both. Therefore, unlike the suspension mechanism 50 connected to both the processing chamber wall and the sprinkler head, the gas seal periphery does not support the weight of the sprinkler head, and the gas seal peripheral has more degrees of freedom for expansion and Shrinkage, while 20 '1306782 is not limited by the distance between the sprinkler head and the walls of the chamber. The gas seal perimeter is not connected to the process chamber wall or the upper or lower end of the sprinkler head is referred to as the "unconnected" end of the gas seal.
為辨明先前段落中所用的名詞,若氣體密封外圍70 的上端連接至處理室壁 1 4 -1 8,則氣體密封外圍的下端便 為氣體密封外圍的「未連接端」,而「該一元件(said one c o m ρ ο n e n t)」則為噴灑頭2 0。反之,若氣體密封外圍的下 端連接至噴灑頭,則氣體密封外圍的上端便為氣體密封外 圍的「未連接端」,而「該一元件」則為處理室壁。 因為氣體密封外圍70並未連接至處理室壁14-18或噴 灑頭2 0的任一者,氣體密封外圍未連接的上或下端可藉數 個間隙與該一元件分隔,其中該數個間隙數目大於或等於 零。若間隙數目為零,表示氣體密封外圍未連接之端鄰抵 該一元件,如第6及7圖之實施例所示,下文將再予詳述。 第8圖(也描述於下文)係繪示氣體密封外圍與懸置機構間 間隙數目非零的態樣。 氣體密封外圍係經配置使其包圍處理室壁及喷灑頭間 之區域的側邊,以使處理室壁、喷灑頭、氣體密封外圍以 及前述間隙可共同封圍進氣空間3 0,亦即,製程氣體可自 進氣通道2 6通過該空間流入出氣通道2 2。(此處用詞「包 圍」係指圍繞或環繞前述區域的側邊,而非暗指一環狀外 形)。 如前文所述,氣體密封外圍較佳係由懸吊壁5 0朝内徑 向地設置,以使氣體密封外圍介於進氣空間與懸吊壁 50 21 .1306782 之間,亦即,使懸吊壁5 0位於進氣空間3 0外側。若間隙 數目如先前内容界定為零(亦即,若氣體密封外圍及該元件 間未連接之上或下端間未有間隙 '且氣體密封外圍未連接 該元件時,其中前述元件為處理室壁1 4 -1 8或噴灑頭2 0, 如先前内容所解釋者),則氣體密封外圍7 0將完全阻卻製 程氣體流經進氣空間3 0與懸置機構接觸。To identify the noun used in the previous paragraph, if the upper end of the gas-tight periphery 70 is connected to the processing chamber wall 14-1, the lower end of the gas-sealed periphery is the "unconnected end" of the gas-tight periphery, and the element (said one com ρ ο nent)" is the sprinkler head 20. On the other hand, if the lower end of the gas seal periphery is connected to the sprinkler head, the upper end of the gas seal periphery is the "unconnected end" of the gas seal outer periphery, and the "one element" is the process chamber wall. Because the gas seal periphery 70 is not connected to any of the process chamber walls 14-18 or the showerhead 20, the unattached upper or lower end of the gas seal perimeter may be separated from the component by a plurality of gaps, wherein the plurality of gaps The number is greater than or equal to zero. If the number of gaps is zero, it indicates that the unconnected end of the gas seal is adjacent to the one element, as shown in the embodiments of Figures 6 and 7, which will be described in more detail below. Figure 8 (also described below) shows a non-zero aspect of the number of gaps between the periphery of the gas seal and the suspension mechanism. The gas seal periphery is configured to surround the side of the process chamber wall and the area between the shower heads so that the process chamber wall, the sprinkler head, the gas seal periphery, and the aforementioned gap can collectively enclose the intake space 30, That is, the process gas can flow from the intake passage 26 into the outlet passage 22 through the space. (The term "envelope" as used herein refers to the side that surrounds or surrounds the aforementioned area, and does not imply an annular shape). As mentioned above, the gas seal periphery is preferably radially inwardly disposed by the suspension wall 50 so that the gas seal periphery is interposed between the air inlet space and the suspension wall 50 211306802, that is, the suspension The hanging wall 50 is located outside the intake space 30. If the number of gaps is zero as previously defined (ie, if there is no gap between the gas-sealed periphery and the unconnected or between the lower ends of the elements) and the gas-sealed periphery is not connected to the component, the aforementioned component is the process chamber wall 1 4 -1 8 or sprinkler head 20, as explained in the previous section), the gas seal periphery 70 will completely block the process gas from flowing through the inlet space 30 to contact the suspension mechanism.
反之,若有前述間隙存在,一部份進入進氣空間 30 的製程氣體會由該等間隙洩漏並接觸懸吊壁5 0,因而不樂 見地冷卻懸吊壁。一部份經由該等間隙洩漏的製程氣體大 致與該等間隙的結合面積對氣體密封外圍之内表面 7 4之 面積(亦即,面對進氣空間3 0的表面,即面對進氣歧管之 内部 3 0)的比例成比例。為使氣體密封外圍能實質上保護 懸吊壁不受製程氣體流的冷卻,本發明亦預期了該等間隙 之結合面積不應大於氣體密封外圍内表面積的三分之一, 較佳不大於十分之一。 於所示進氣歧管頂壁1 8及喷灑頭2 0為矩形截面的較 佳實施例中,氣體密封外圍7 0較佳包括四片分別連接至進 氣歧管頂壁四側的部件,而四部件的各者較佳為矩形鋁片。 氣體密封外圍7 0各片的下端較佳懸掛鄰近噴灑頭2 0 的邊緣6 0,以最小化氣體密封外圍以及喷灑頭間的任一間 隙尺寸。於第2圖所示較佳實施例中,噴灑頭邊緣6 0的上 表面包括一溝槽66,其接近且平行於喷灑頭周圍。氣體密 封外圍之各片的下端延伸至溝槽66中,藉以延伸至喷灑頭 上表面的下方。當喷灑頭回應升高溫度而膨脹時,溝槽6 6 22 1306782 的徑向内壁會鄰抵及向外推動氣體密封外圍 7 0之各片的 下端。因此,氣體密封外圍及喷灑頭間的任何間隙都可忽 略,以於氣體密封外圍及喷灑頭間形成良好密封。On the other hand, if the gap exists, a part of the process gas entering the intake space 30 leaks from the gaps and contacts the suspension wall 50, thereby unsatisfactorily cooling the suspension wall. A portion of the process gas leaking through the gaps substantially overlaps the area of the gaps with respect to the area of the inner surface 74 of the gas seal periphery (ie, the surface facing the intake space 30, that is, facing the intake air The proportion of the internal 3 0) of the tube is proportional. In order to allow the gas seal periphery to substantially protect the suspension wall from the cooling of the process gas stream, the present invention also contemplates that the joint area of the gaps should not be greater than one third of the inner surface area of the gas seal periphery, preferably no more than ten. One of the points. In the preferred embodiment in which the intake manifold top wall 18 and the sprinkler head 20 have a rectangular cross section, the gas seal periphery 70 preferably includes four pieces that are respectively connected to the four sides of the intake manifold top wall. And each of the four components is preferably a rectangular aluminum sheet. The lower end of each of the gas seal peripherals 70 is preferably suspended adjacent the edge 60 of the showerhead 20 to minimize the size of the gas seal periphery and any gap between the showerheads. In the preferred embodiment illustrated in Figure 2, the upper surface of the sprinkler head edge 60 includes a groove 66 that is adjacent and parallel to the periphery of the sprinkler head. The lower ends of the sheets of the gas-tight periphery extend into the grooves 66 to extend below the upper surface of the showerhead. When the sprinkler head expands in response to the elevated temperature, the radially inner wall of the groove 6 6 22 1306782 will abut and push outwardly toward the lower end of each of the gas seal peripherals 70. Therefore, any gap between the gas seal periphery and the sprinkler head can be neglected to form a good seal between the gas seal periphery and the sprinkler head.
如先前標題「2 .用於喷灑頭之可彎曲懸置機構」中所 解釋,氣體密封外圍7 0之各片較佳應薄至足以彎曲。於較 佳實施例中,各板片為1 m m厚的銘。因為氣體密封外圍可 彎曲,當喷灑頭於處理室操作期間受熱且徑向膨脹時,喷 灑頭邊緣會徑向向外推動並鄰抵氣體密封外圍各可彎曲片 7 0的下端,以使氣體密封外圍仍與噴灑頭接觸。因此,於 處理室操作期間,氣體密封外圍及噴灑頭間的任何空隙在 所有溫度下都是可忽略的。如先前標題「2 .用於喷灑頭之 可彎曲懸置機構」中第二段所解釋,在電漿處理室之一般 操作溫度下,鋁喷灑頭 2 0之各側會相對於其中心膨脹約 0.5 %。因此,氣體密封外圍之各板片可彎曲至足以向外徑 向彎折(亦即,垂直該板片的平面)約氣體密封外圍之一側 之水平寬度的至少〇 . 5 %。 氣體密封外圍7 0之各矩形鋁板片的上端可作彎折,較 佳呈直角,以形成可連接至處理室壁1 4 - 1 8的上凸緣7 2。 亦即,四個鋁片之每一者的上端係作為上凸緣7 2,各板片 其餘自上凸緣向下延伸的部分則作為氣體密封外圍7 0,而 上凸緣72可將氣體密封外圍70連接至處理室壁14-18。 較佳而言,四個上凸緣 72之各者係利用相同螺栓 4 0 (用以將四片懸掛壁5 0之上凸緣5 2拴入進氣歧管頂壁 1 8)拴入進氣歧管頂壁1 8。氣體密封外圍的上凸緣7 2較佳 23 •1306782 係自螺栓徑向向内延伸一較懸置機構之上凸緣 5 2為大的 距離,以使氣體密封外圍7 0與懸掛壁5 0徑向向内相隔。 氣體密封外圍及懸掛壁間的徑向間隔應大至足以避免在承 受熱膨脹及收縮時彼此接觸。於較佳實施例中,室溫下的 徑向間隔約為5mm。 第6、7及8圖係顯示喷灑頭邊缘6 0部分的替代設計, 其鄰近或鄰抵氣體密封外圍7 0的下端。As previously explained in the heading "2. Flexible suspension mechanism for sprinkler heads", the sheets of the gas seal periphery 70 should preferably be thin enough to bend. In the preferred embodiment, each of the sheets is 1 m thick. Because the periphery of the gas seal is bendable, when the sprinkler is heated and radially expanded during operation of the processing chamber, the edge of the sprinkler is pushed radially outwardly and abuts against the lower end of each of the flexible sheets 70 at the periphery of the gas seal so that The gas seal is still in contact with the sprinkler head. Therefore, any gap between the gas seal periphery and the showerhead during the processing chamber operation is negligible at all temperatures. As explained in the second paragraph of the previous heading "2. Flexible suspension mechanism for sprinkler heads", at the normal operating temperature of the plasma processing chamber, the sides of the aluminum sprinkler 20 will be relative to the center thereof. The expansion is about 0.5%. Therefore, the sheets of the periphery of the gas seal may be bent to be sufficiently bent toward the outer diameter (i.e., perpendicular to the plane of the sheet) to be at least 〇 5 % of the horizontal width of one side of the gas seal periphery. The upper ends of the rectangular aluminum sheets of the gas seal periphery 70 may be bent, preferably at right angles, to form an upper flange 724 connectable to the chamber walls 14-14. That is, the upper end of each of the four aluminum sheets is used as the upper flange 72, and the remaining portion of each of the sheets extending downward from the upper flange serves as a gas-sealed periphery 70, and the upper flange 72 can supply gas. Sealed periphery 70 is coupled to process chamber walls 14-18. Preferably, each of the four upper flanges 72 is slid into the same by the same bolt 40 (to smash the flange 5 of the four suspension walls 50 into the top wall of the intake manifold 18). The top wall of the gas manifold is 18. The upper flange 7 2 of the gas seal periphery is preferably 23 • 1306782 extending radially inward from the bolt by a large distance from the flange 52 of the suspension mechanism to allow the gas to seal the periphery 70 and the suspension wall 50 Radially inwardly spaced apart. The radial spacing between the periphery of the gas seal and the wall of the suspension should be large enough to avoid contact with each other when subjected to thermal expansion and contraction. In the preferred embodiment, the radial spacing at room temperature is about 5 mm. Figures 6, 7 and 8 show an alternative design of the portion 60 of the sprinkler head adjacent or adjacent to the lower end of the gas-sealed periphery 70.
於第6圖實施例中,氣體密封外圍的各板片係延伸於 噴灑頭上表面的下方,以徑向鄰抵喷灑頭邊緣6 0的外表 面。於此實施例中,氣體密封外圍的各板片較佳是連接至 處理室壁一位置處,以使氣體密封外圍垂直延伸板片的上 端在喷灑頭冷卻(亦即,處於室溫)時由喷灑頭邊緣的周圍 稍微徑向向内。亦即,氣體密封外圍的下端係相對於上端 向外偏斜,以使喷灑頭邊緣及氣體密封外圍之下端間能於 所有溫度下皆維持若干張力,藉以確保氣體密封外圍及噴 灑頭間的任何間隙在所有溫度下都可以忽略。 於第7圖之實施例中,氣體密封外圍之最下端略在噴 灑頭2 0之上表面之上。喷灑頭邊緣6 0之上表面包括一向 上突出的突起或檔體6 8,其徑向外表面鄰抵氣體密封外圍 之各板片之下端的徑向内表面。該突起6 8係沿氣體密封外 圍之各板片的整個寬度平行延伸至喷灑頭的邊緣,以使板 片及氣體密封外圍間的任何間隙都可忽略。如第6圖所示 實施例中,氣體密封外圍之各板片較佳係連接至處理室壁 一位置處,以使氣體密封外圍垂直延伸板片的上端在喷灑 24In the embodiment of Figure 6, the sheets of the periphery of the gas seal extend below the upper surface of the sprinkler head to radially abut the outer surface of the sprinkler head edge 60. In this embodiment, the plates of the periphery of the gas seal are preferably connected to a position of the wall of the processing chamber such that the upper end of the vertically extending sheet of the gas-sealed periphery is cooled by the showerhead (ie, at room temperature). The circumference of the edge of the sprinkler is slightly radially inward. That is, the lower end of the periphery of the gas seal is outwardly deflected relative to the upper end so that a certain tension can be maintained at all temperatures between the edge of the sprinkler head and the lower end of the gas seal to ensure a gas seal between the periphery and the sprinkler head. Any gap can be ignored at all temperatures. In the embodiment of Fig. 7, the lowermost end of the gas seal periphery is slightly above the upper surface of the shower head 20. The upper surface of the sprinkler head edge 60 includes an upwardly projecting projection or body 6 8 having a radially outer surface that abuts against a radially inner surface of the lower end of each of the sheets of the gas seal periphery. The projections 68 extend parallel to the entire width of each of the sheets surrounding the gas seal to the edge of the showerhead so that any gap between the panel and the periphery of the gas seal is negligible. As shown in Fig. 6, in the embodiment, the sheets of the periphery of the gas seal are preferably connected to a position of the wall of the processing chamber so that the upper end of the vertically extending sheet of the gas seal is sprayed.
1306782 頭冷卻時由喷灑頭邊緣的突起6 8的外表面稍微徑向向P 於第8圖之實施例中,氣體密封外圍並未鄰抵喷灑 20的任何部分,但氣體密封外圍的最下端是位於鄰近喷 頭邊緣6 0之上表面處。氣體密封外圍及喷灑頭間間隙的 合面積不應大於前述界定的最大面積。 雖然所示實施例中氣體密封外圍的未連.接端為底端 但本發明亦涵蓋氣體密封外圍之未連接端為頂端的替代 施方式,且氣體密封外圍的底端連接至喷灑頭。 5.減少懸掛壁表面積的開口 為改善或避免前述「3 .冷卻期間懸置機構應力的 題」,本發明第二態樣係包含於各懸吊壁5 0中提供數個 口 8 0。前述開口可減少懸吊壁暴露於製程處理室内之氣 的表面積,並藉以減少懸掛壁與氣體間的熱傳送。因此 當處理室蓋件開啟而使周遭壓力下的冷空氣突入處理 時,該等開口可減緩懸掛壁的冷卻速率,藉以降低懸吊 内的應力(熱衝擊)。 為實質減少製程處理室内懸掛壁 5 0及氣體間的熱 送,各懸吊壁内的開口 8 0應共同佔據懸掛壁暴露於氣體 部分(即,垂直延伸於處理室壁1 4 -1 8以及喷灑頭2 0間 部分)的總面積的至少百分之五、且較佳至少四分之一。 前所指「總面積」包括懸吊壁實體部分的面積以及開口 的面積。或者,本發明態樣較嚴格來說,各懸吊壁内之 等開口 8 0應共用懸吊壁面積的至少百分之五、且較佳至 頭 湩 έ士 、*、〇 實 問 開 體 J 室 壁 傳 之 的 先 80 該 少 25 1306782 四分之一。該等開口 8 0的總面積並不包括螺栓或其他穿過 任一開口之固定件所佔據或覆蓋的面積。1306782 When the head is cooled, the outer surface of the projection 68 from the edge of the sprinkler head is slightly radial toward P. In the embodiment of Fig. 8, the gas seal periphery is not adjacent to any part of the spray 20, but the gas seal is the outermost The lower end is located adjacent the surface of the nozzle edge 60. The area of the gap between the gas seal and the sprinkler should not be larger than the maximum area defined above. Although the unconnected end of the gas seal periphery is the bottom end in the illustrated embodiment, the present invention also contemplates that the unconnected end of the gas seal periphery is a tip end, and the bottom end of the gas seal periphery is connected to the sprinkler head. 5. Openings for reducing the surface area of the suspension wall In order to improve or avoid the aforementioned "3. Problem of the stress of the suspension mechanism during cooling", the second aspect of the present invention is provided in each of the suspension walls 50 to provide a plurality of ports 80. The aforementioned opening reduces the surface area of the suspension wall exposed to the gas in the process chamber and thereby reduces heat transfer between the suspension wall and the gas. Therefore, when the process chamber cover member is opened to allow cold air under ambient pressure to protrude into the treatment, the openings can slow down the cooling rate of the suspension wall, thereby reducing the stress (thermal shock) in the suspension. In order to substantially reduce the heat transfer between the indoor suspension wall 50 and the gas in the process, the openings 80 in each suspension wall should collectively occupy the suspension wall exposed to the gas portion (ie, vertically extending from the processing chamber wall 14-14) and At least five percent, and preferably at least one quarter of the total area of the sprinkler heads. The “total area” referred to above includes the area of the solid part of the suspension wall and the area of the opening. Alternatively, in a stricter aspect of the invention, the openings 80 in each of the suspension walls should share at least five percent of the area of the suspension wall, and preferably the head gentleman, *, 〇 〇 open body The first 80 of the J room wall is less than a quarter of 130 1306782. The total area of the openings 80 does not include the area occupied by or covered by bolts or other fasteners that pass through either opening.
第9圖顯示之較佳實施例中,該等開口 8 0佔據各懸吊 壁5 0之垂直延伸部分的面積約三分之二。四個懸吊壁之各 者係垂直伸長,以使各開口 8 0幾乎延伸懸掛壁的整個垂直 高度。於此較佳實施例中,該等開口間的橫向間距約為各 開口寬度的二分之一,以使該等開口佔據各懸吊壁垂直部 分之面積的三分之二。 第1 0圖顯示之替代實施例中,該等開口 8 0係全部延 伸向懸置機構未連接處理室壁1 4 -1 8或喷灑頭2 0的端部。 於所示實施例中,懸置機構未連接之端為位於各懸吊壁5 0 底端的下凸緣5 4,故各開口 8 0會全部徑向延伸過下凸緣, 以於鄰近開口 80間的下凸緣中形成徑向延伸的「指部 (f i n g e r s )」。於此替代實施例中,各指部的下端包括數個安 裝孔5 6、5 7的一者,以囁合喷灑頭邊緣中之對應銷6 4, 以使懸置機構之各下凸緣中開口 80的數目少於安裝孔 5 6、5 7的數目。 與第9圖之較佳實施例相比,第1 0圖之替代實施例有 下列優點:(1)在懸吊壁以箭頭8 2方向(即,懸吊壁平面水 平方向)膨脹及收縮時,可進一步減少各懸吊壁内的應力; 以及(2)允許各指部扭彎(twist)以容納噴灑頭及懸置機構 間的熱膨脹。然而,第1 〇圖之替代實施例具有兩個可能的 潛在缺點:(1)與第9圖實施例相比,第10圖之替代實施 例可能較難以將下凸緣5 4中的安裝孔5 6、5 7與喷灑頭邊 26 1306782 園中的對應銷6 4對齊;以及(2)下凸緣的「指部」容易受 工作人員噴灑頭接附至懸置機構時的不慎彎折所影響。 第1 1圖顯示第9圖實施例之變化,其中各開口 8 0並 非完全由懸置機構側壁5 0切出,而是藉僅繞開口周圍部分 切割的方式形成,留有一邊緣完整(即所示實施例中存留下 邊緣)。完整邊缘可作為鉸,以讓開口圓周内的懸置機構側 壁部分8 1可向外推展而形成開口。In the preferred embodiment shown in Fig. 9, the openings 80 occupy approximately two-thirds of the area of the vertically extending portions of each of the suspension walls 50. Each of the four suspension walls is vertically elongated such that each opening 80 extends almost the entire vertical height of the suspension wall. In the preferred embodiment, the lateral spacing between the openings is about one-half of the width of each opening such that the openings occupy two-thirds of the area of the vertical portions of each of the suspension walls. In an alternative embodiment shown in Fig. 10, the openings 80 are all extended to the end of the processing chamber wall 1 4 -1 8 or the shower head 20 that is not attached to the suspension mechanism. In the illustrated embodiment, the unattached end of the suspension mechanism is the lower flange 54 at the bottom end of each of the suspension walls 50, so that each of the openings 80 will extend radially through the lower flange so as to be adjacent to the opening 80. Radially extending "fingers" are formed in the lower flanges. In this alternative embodiment, the lower end of each finger includes one of a plurality of mounting holes 56, 57 to fit the corresponding pin 64 in the edge of the sprinkler head such that the lower flange of the suspension mechanism The number of the middle openings 80 is less than the number of the mounting holes 56, 57. Compared with the preferred embodiment of Fig. 9, the alternative embodiment of Fig. 10 has the following advantages: (1) when the suspension wall expands and contracts in the direction of arrow 8 2 (i.e., horizontally in the plane of the suspension wall) The stresses in each of the suspension walls can be further reduced; and (2) the fingers are allowed to twist to accommodate thermal expansion between the sprinkler head and the suspension mechanism. However, the alternative embodiment of Figure 1 has two possible potential drawbacks: (1) The alternative embodiment of Figure 10 may be more difficult to mount the mounting hole in the lower flange 5 4 than the embodiment of Figure 9. 5 6 , 5 7 are aligned with the corresponding pin 6 4 in the garden of the sprinkler head 26 1306782; and (2) the "finger" of the lower flange is susceptible to inadvertent bending when the worker sprinkler head is attached to the suspension mechanism The effect of the discount. Fig. 1 shows a variation of the embodiment of Fig. 9, wherein each opening 80 is not completely cut out by the side wall 50 of the suspension mechanism, but is formed by cutting only around the circumference of the opening, leaving a complete edge (ie, There are edges left in the illustrated embodiment). The full edge can serve as a hinge to allow the suspension mechanism side wall portion 81 in the circumference of the opening to be pushed outwardly to form an opening.
6.—或多個垂直配置的裂口 為改善前述標題「3 .冷卻期間懸置機構應力的問題」 中所述懸吊壁的熱誘發應力,本發明之第三態樣包括於各 懸吊壁5 0中提供至少一實質垂直配置的一或多個裂口。該 等裂口可藉由弱化懸吊壁裂口位置處的方式改善懸吊壁中 的應力,以回應熱應力幫助壁的水平彎曲或彎折。前述彎 曲或彎折可釋放應力,以減少再次發生應力而最終導致變 形、破裂或撕裂懸吊壁的風險。 裂口可藉由許多方式形成於懸吊壁中,例如切割、穿 刺或壓印等方式。此外,裂口可為任何形狀且無需完全延 伸過懸吊壁。例如,裂口可為任何形狀的狹缝、穿孔或開 口以全部延伸過懸掛壁。此種裂口可由,例如,切割或穿 刺懸吊壁的方式形成,以不由懸吊壁移除任何材料而形成 切口、或可藉由自懸吊壁移除材料以形成開口的方式形成 切口。或者,裂口可為不整個延伸過懸吊壁的溝槽或缺口。 然而,裂口並不包括螺栓或其他固定物(用以將懸吊壁穩固 276. or a plurality of vertically disposed slits are heat-induced stresses of the suspension wall described in the above-mentioned heading "3. Problems of stress of the suspension mechanism during cooling", and the third aspect of the present invention is included in each of the suspension walls One or more splits in at least one substantially vertical configuration are provided in the 50. The splits can improve the stress in the suspension wall by weakening the location of the breaching wall to assist in horizontal bending or bending of the wall in response to thermal stress. The aforementioned bending or bending relieves stress to reduce the risk of recurring stresses that ultimately result in deformation, cracking or tearing of the suspension wall. The split can be formed in the suspension wall in a number of ways, such as by cutting, piercing or embossing. In addition, the split can be of any shape and does not need to extend completely through the suspension wall. For example, the slit can be any shape of slit, perforation or opening to extend all the way through the suspension wall. Such a slit may be formed, for example, by cutting or piercing the hanging wall to form a slit without removing any material from the hanging wall, or may form a slit by removing material from the hanging wall to form an opening. Alternatively, the split may be a groove or notch that does not extend entirely through the suspension wall. However, the split does not include bolts or other fixtures (to stabilize the suspension wall 27
1306782 接附至其他物件)所佔據的開口,因為那樣的固定物 開口無法實施協助彎曲或彎折懸吊壁的功能。 一或多個大致垂直配置的裂口可為實質垂直伸 一裂口(第1 2圖)、或數個任何形狀且實質上以垂直 隔的裂口(第1 3圖)。第1 2圖說明懸吊壁5 0具有數 的裂口 84,其中各垂直伸長的裂口 84係由垂直向 組成,以不移除懸吊壁材料。第1 3圖係說明懸吊嘆 有數個垂直伸長的裂口 84,其t各垂直伸長的裂口 由數個垂直間隔的圓形開口 8 6所組成。 對本專利說明書及申請專利範圍而言,「實 (substantially vertical)」意指45度内的垂直。在數 形狀之裂口以實質垂直方向間隔的實施例中,數個 不需共線,只需使數個裂口以垂直4 5度内的方向位 區域内即可。 為達成最佳應力降低,於各懸吊壁中將一或多 以實質垂直(而非水平)的方向配置非常重要。更 言,於懸吊壁中實質垂直配置裂口有利於懸吊壁於 中以水平方向(箭頭8 2的方向)彎曲或彎折,以便釋 分量的應力。懸吊壁内垂直向的應力通常可藉由向 外彎曲懸吊壁的方式予以釋放。然而,若不依據本 實質垂直方向配置裂口 ,水平方向的應力通常無法 釋放,這是因為各懸吊壁的上方部(例如第3圖中的 5 2 )通常是沿其寬度方向穩固地接附於處理室壁 1 4 數處,且各懸吊壁的下方部(例如第3圖中的下凸續 會迫使 長的單 方向分 個伸長 的狹缝 E 50具 84係 質垂直 個任何 裂口並 於伸長 個裂口 明確而 其平面 放水平 内或向 發明以 立即被 上凸緣 -18白勺 :54)通 28 1306782 常是穩固地連接至喷灑頭2 0的邊緣6 0,否則其水平膨脹 將會受限於伸長安裝孔5 7的寬度。 7.共平面之懸吊壁 為改善前述「3 .冷卻期間懸置機構應力的問題」中懸 吊壁中的熱誘發應力,本發明之第四態樣至少包含將至少 一懸吊壁5 0以數個共平面懸吊壁5 0取代,如第1 4圖所示。The opening occupied by 1306782 attached to other objects, because such a fixed opening cannot perform the function of assisting bending or bending the hanging wall. The one or more substantially vertically disposed slits may be substantially perpendicular to the split (Fig. 12), or a plurality of slits of any shape and substantially vertically spaced (Fig. 13). Figure 12 illustrates a plurality of slits 84 having a plurality of slits 84 in which the vertically elongated slits 84 are vertically oriented so as not to remove the wall material. Figure 1 3 illustrates the sling of a plurality of vertically elongated slits 84, each of which has a vertically elongated slit formed by a plurality of vertically spaced circular openings 86. For the purposes of this patent specification and the scope of the patent application, "substantially vertical" means vertical within 45 degrees. In the embodiment in which the slits of the plurality of shapes are spaced apart in the substantially vertical direction, a plurality of slits are not required to be collinear, and it is only necessary to make the plurality of slits in the direction of the vertical direction within 45 degrees. In order to achieve optimum stress reduction, it is important to have one or more of the suspension walls in a substantially vertical (rather than horizontal) direction. More specifically, the substantially vertical configuration of the split in the suspension wall facilitates bending or bending of the suspension wall in the horizontal direction (arrow 8 2) to relieve the component stress. The vertical stress in the suspension wall can usually be released by bending the suspension wall outward. However, if the slit is not disposed in accordance with the substantially vertical direction, the stress in the horizontal direction is generally not released because the upper portion of each of the suspension walls (for example, 5 2 in FIG. 3) is usually firmly attached in the width direction thereof. At a number of walls of the processing chamber, and the lower portion of each of the suspension walls (for example, the lower projection in FIG. 3 forces a long unidirectionally elongated slit E 50 with 84 lines perpendicular to any slit and When the elongation of the slit is clear and its plane is horizontal or toward the invention to be immediately applied to the upper flange -18: 54) pass 28 1306782 is often firmly connected to the edge 60 of the sprinkler head 20, otherwise its horizontal expansion It will be limited by the width of the elongated mounting hole 57. 7. The coplanar suspension wall is a thermally induced stress in the suspension wall in the above-mentioned "3. Problems of the suspension mechanism stress during cooling", and the fourth aspect of the invention includes at least one suspension wall 50 Replaced by a number of coplanar suspension walls 50, as shown in Figure 14.
更明確而言,此處所述懸吊壁5 0為共平面事實上僅有 其各中心部分為共平面。前述各懸吊壁具有一位於上方部 及下方部之間的中心部,其中上方部連接至處理室壁 14-18且下方部連接至喷灑頭20。上方部及下方部可能包 括未共平面的凸緣52、54。不過,會有至少兩個具有共平 面中心部的懸吊壁。較佳而言,兩懸吊壁的共平面中心部 係由數個垂直間隙8 8作水平分隔。 若數個共平面懸吊壁是以變數Ν表示,則各共平面懸 吊壁之寬度在與以單一懸吊壁取代時的寬度比較時會約縮 減係數Ν。在共平面壁間的間隙8 8其寬度為各共平面壁寬 度的至少一部份時,各共平面壁的寬度甚至會縮減更大的 係數。 將第1 4圖中所示發明實施例與第3圖所示習知設計兩 相比較,第3圖中兩個長懸吊壁5 0於第14圖中係以三個 寬度約三分之一的壁(Ν = 3)取代。第3圖中兩個短懸吊壁於 第14圖中則以兩個寬度約二分之一的壁(Ν = 2)取代。 縮減懸吊壁寬度相當於縮減懸吊壁中任何熱誘發應力 ! : 29 1306782 的水平分量。因此,本發明應可降低懸节壁最終回應前述 應力而變形、破裂或撕裂的風險。 當喷灑頭2 0如第1 4圖中所示為矩形時,連接至喷灑 頭四個橫向側之特定一者的懸吊壁應為共平面,同時分別 連接至喷灑頭兩鄰近側的懸吊壁應呈垂直。 雖然本發明已參照該等較佳實施例詳細描述,然應可 理解其亦可在不悖離本發明精神及範圍下作改變或潤飾。More specifically, the suspension wall 50 described herein is coplanar and in fact only its central portions are coplanar. Each of the foregoing suspension walls has a central portion between the upper portion and the lower portion, wherein the upper portion is coupled to the process chamber walls 14-18 and the lower portion is coupled to the showerhead 20. The upper and lower portions may include flanges 52, 54 that are not coplanar. However, there will be at least two suspension walls with a central portion of the coplanar. Preferably, the coplanar center portions of the two suspension walls are horizontally separated by a plurality of vertical gaps 88. If several coplanar suspension walls are represented by a variable Ν, the width of each coplanar suspension wall will be reduced by a factor of 比较 when compared to the width when replaced by a single suspension wall. When the gap 8 8 between the coplanar walls is at least a portion of the width of each coplanar wall, the width of each coplanar wall may even be reduced by a larger factor. Comparing the invention embodiment shown in FIG. 14 with the conventional design shown in FIG. 3, the two long suspension walls 50 in FIG. 3 are three widths of about three-thirds in FIG. A wall (Ν = 3) is substituted. The two short suspension walls in Fig. 3 are replaced in Fig. 14 by two walls (Ν = 2) of about one-half the width. Reducing the width of the suspension wall is equivalent to reducing the horizontal component of any thermally induced stress in the suspension wall! : 29 1306782. Accordingly, the present invention should reduce the risk of the cantilever wall eventually deforming, breaking or tearing in response to the aforementioned stresses. When the sprinkler head 20 is rectangular as shown in Fig. 14, the suspending walls connected to the particular one of the four lateral sides of the sprinkler head should be coplanar and simultaneously connected to the adjacent sides of the sprinkler head, respectively. The suspension wall should be vertical. Although the invention has been described in detail with reference to the preferred embodiments thereof, it is understood that the invention may be modified or modified without departing from the spirit and scope of the invention.
【圖式簡單說明】 第1圖為電漿處理室之部分截面、概要側視圖,其包 括本發明之氣體密封外圍。 第2圖為懸置機構、喷灑頭及氣體密封外圍之垂直截 面圖。 第3圖為懸置機構之平面圖,其顯示本發明較佳實施 例之特徵具有習知設計的態樣。 第4圖為第1圖之電漿處理室的部分截面概要圖,其 更包括用於喷灑頭之中心支撐件。 第5圖為第1、2及4圖之氣體密封外圍的概要圖。 第6、7及8圖為第2圖懸置機構、喷灑頭及氣體密封 外圍之垂直截面圖,但顯示鄰近氣體密封外圍下端之喷灑 頭邊緣部分之替換實施例。 第9圖為懸置機構之一壁的側視圖,其具有本發明第 二實施態樣中垂直延伸的伸長開口。 第1 0圖為懸置機構之一壁的替換實施例側視圖,其開 30 1306782BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a partial cross-sectional, schematic side view of a plasma processing chamber including a gas-sealed periphery of the present invention. Figure 2 is a vertical cross-sectional view of the suspension mechanism, sprinkler head, and gas seal periphery. Figure 3 is a plan view of the suspension mechanism showing features of a preferred embodiment of the present invention having a conventional design. Figure 4 is a partial cross-sectional schematic view of the plasma processing chamber of Figure 1, which further includes a central support for the showerhead. Figure 5 is a schematic view of the periphery of the gas seal of Figures 1, 2 and 4. Figures 6, 7 and 8 are vertical cross-sectional views of the suspension mechanism, sprinkler head and gas seal periphery of Fig. 2, but showing an alternative embodiment of the edge portion of the sprinkler adjacent the lower end of the gas seal periphery. Figure 9 is a side elevational view of one of the walls of the suspension mechanism having an elongated opening extending vertically in a second embodiment of the present invention. Figure 10 is a side view of an alternative embodiment of a wall of a suspension mechanism, which opens 30 1306782
σ 皆 延 伸至懸置機 t構 底 部邊 緣。 第 1 1圖為懸 置機構之- -壁 的第 二實施例側視圖, 其 中 各 開 σ 係僅繞開口 ,周 圍 部分 切割 丨的方式形成,但留有 一 邊 緣 完 整 0 第 12圖為懸 置機構之- 一壁 的側 視圖,其具有本發 明 第 三 實 施 例之一或多 個 垂 直伸 長裂 π ° 第 13圖為懸 置機構之- -壁 之替 換實施例側視圖, 其 具 有 — 或 多個垂直配置 的 裂口 ,其中各垂直配置裂口至 少 包 含 數 個 以大致垂直 .方 向 間隔 的裂 Π ° 第 14圖為懸 置機構之平面 圖,其依據本發明第四 實 施 例 具 有以垂直間 隙 分 隔的 數個 共平面懸吊壁。 [ 主 要 元件符號說 ,明 ] 10 工 作件 12 工 作件支撐件、吸盤、 晶 丨座 14 -1 8 處理室壁 14 處 理室側壁及頂壁 16 蓋 件 18 頂 壁、進氣歧管 19 蓋 體(非功能性) 20 喷 灑頭/散流器. 22 出 氣通道 26 進 氣通道 28 進 氣轉向板 30 進氣空間(進氣歧管之内部區域) 3 1 排 氣狹縫 32 排 氣空間 33 -38 介電襯墊 40 螺 栓 42 U 型條 45 -48 0型環 50 懸 吊壁 52 上 凸緣 54 下 凸緣 56 安 裝孔 31 安裝孔 60 喷灑頭邊緣 溝槽 64 銷 溝槽 68 突起 氣體密封外圍 72 上凸緣 内表面 80 開口 側壁部分 82 箭頭 裂口 86 開口 中心支樓件 102 橫向氣體通道 下方氣體通道 106 安裝環 制動螺桿 32σ is extended to the edge of the bottom of the t-frame of the suspension machine. Fig. 1 is a side view of a second embodiment of the wall of the suspension mechanism, wherein each opening σ is formed only around the opening, and the peripheral portion is formed by cutting the ridge, but leaving an edge intact. Fig. 12 is a suspension mechanism - a side view of a wall having one or more of the third embodiment of the present invention, the vertical extension slit π ° Figure 13 is a side view of an alternative embodiment of the wall of the suspension mechanism, having - or more a vertically disposed split, wherein each vertical configuration split includes at least a plurality of splits spaced in a substantially vertical direction. Figure 14 is a plan view of the suspension mechanism having a plurality of vertical gaps in accordance with a fourth embodiment of the present invention. Coplanar suspension wall. [Main component symbol, clearly] 10 working piece 12 working piece support, suction cup, wafer holder 14 -1 8 processing chamber wall 14 processing chamber side wall and top wall 16 cover member 18 top wall, intake manifold 19 cover (non-functional) 20 sprinkler head / diffuser. 22 outlet passage 26 intake passage 28 intake steering plate 30 intake space (internal area of the intake manifold) 3 1 exhaust slit 32 exhaust space 33 -38 Dielectric gasket 40 Bolt 42 U-bar 45 -48 0-ring 50 Suspension wall 52 Upper flange 54 Lower flange 56 Mounting hole 31 Mounting hole 60 Sprinkler edge groove 64 Pin groove 68 Protruding gas Sealed periphery 72 Upper flange inner surface 80 Open side wall portion 82 Arrow split 86 Open center branch member 102 Lateral gas passage lower gas passage 106 Mounting ring brake screw 32
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| US71387505P | 2005-09-02 | 2005-09-02 |
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| TW095128932A TWI306782B (en) | 2005-09-02 | 2006-08-07 | Suspension for showerhead in process chamber |
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| JP (1) | JP5489390B2 (en) |
| KR (1) | KR101354575B1 (en) |
| CN (1) | CN1924085B (en) |
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| KR102700366B1 (en) * | 2019-01-29 | 2024-08-30 | 주성엔지니어링(주) | Showerhead and substrate processing apparatus having the same |
| WO2021042116A1 (en) | 2019-08-23 | 2021-03-04 | Lam Research Corporation | Thermally controlled chandelier showerhead |
| KR102618455B1 (en) * | 2019-12-02 | 2023-12-27 | 주식회사 원익아이피에스 | Showerhead assembly and substrate processing apparatus having the same |
| US12011731B2 (en) * | 2020-07-10 | 2024-06-18 | Applied Materials, Inc. | Faceplate tensioning method and apparatus to prevent droop |
| KR102909116B1 (en) * | 2022-10-04 | 2026-01-07 | 주식회사 원익아이피에스 | Gas injecting assembly and substrate processing apparatus including the same |
| KR102828735B1 (en) | 2023-04-27 | 2025-07-03 | (주)티티에스 | Air flow improvement device of the showerhead corner area |
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| US5670218A (en) * | 1995-10-04 | 1997-09-23 | Hyundai Electronics Industries Co., Ltd. | Method for forming ferroelectric thin film and apparatus therefor |
| JP3480271B2 (en) * | 1997-10-07 | 2003-12-15 | 東京エレクトロン株式会社 | Shower head structure of heat treatment equipment |
| US6300255B1 (en) * | 1999-02-24 | 2001-10-09 | Applied Materials, Inc. | Method and apparatus for processing semiconductive wafers |
| US6461435B1 (en) * | 2000-06-22 | 2002-10-08 | Applied Materials, Inc. | Showerhead with reduced contact area |
| US7131218B2 (en) * | 2004-02-23 | 2006-11-07 | Nike, Inc. | Fluid-filled bladder incorporating a foam tensile member |
| JP4698251B2 (en) * | 2004-02-24 | 2011-06-08 | アプライド マテリアルズ インコーポレイテッド | Movable or flexible shower head mounting |
-
2006
- 2006-08-07 TW TW095128932A patent/TWI306782B/en active
- 2006-08-31 KR KR1020060083734A patent/KR101354575B1/en active Active
- 2006-09-01 CN CN2006101267890A patent/CN1924085B/en active Active
- 2006-09-04 JP JP2006239266A patent/JP5489390B2/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI766219B (en) * | 2019-01-07 | 2022-06-01 | 日商愛發科股份有限公司 | Vacuum processing apparatus and method of cleaning vacuum processing apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20070026210A (en) | 2007-03-08 |
| JP5489390B2 (en) | 2014-05-14 |
| CN1924085A (en) | 2007-03-07 |
| CN1924085B (en) | 2013-10-23 |
| KR101354575B1 (en) | 2014-01-22 |
| JP2007123840A (en) | 2007-05-17 |
| TW200709854A (en) | 2007-03-16 |
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